CN116125744A - Photomask, manufacturing method thereof and exposure method - Google Patents

Photomask, manufacturing method thereof and exposure method Download PDF

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Publication number
CN116125744A
CN116125744A CN202111350363.4A CN202111350363A CN116125744A CN 116125744 A CN116125744 A CN 116125744A CN 202111350363 A CN202111350363 A CN 202111350363A CN 116125744 A CN116125744 A CN 116125744A
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China
Prior art keywords
element group
test element
group mark
edge
region
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CN202111350363.4A
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Chinese (zh)
Inventor
虞静
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to CN202111350363.4A priority Critical patent/CN116125744A/en
Priority to PCT/CN2021/138265 priority patent/WO2023082411A1/en
Publication of CN116125744A publication Critical patent/CN116125744A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention relates to the field of semiconductor processing, and discloses a photomask, a manufacturing method thereof and an exposure method. A photomask, comprising: the first pattern area and the first cutting channel area surrounding the first pattern area are provided with first test element group marks in the first cutting channel area, and a first gap is reserved between the side edge of the first test element group mark and the edge, adjacent to the first test element group mark, in the first cutting channel area along the width direction of the first cutting channel area. A first gap is formed between the side edge of the first test element group mark in the photomask and the edge, adjacent to the first test element group mark, in the first cutting channel region, namely, a first gap is formed between the first test element group mark and the first pattern region, and during the manufacturing process of the photomask, the photoresist separates metals during the second scanning, so that the metals in the first gap are removed, redundant metal residues are not generated on the photomask, and the influence of the residual metals on the pattern region of the wafer chip is avoided.

Description

Photomask, manufacturing method thereof and exposure method
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a photomask, a manufacturing method thereof and an exposure method.
Background
With the rapid development of the electronic industry, in the electronic manufacturing industries such as liquid crystal display (Liquid Crystal Display, LCD), integrated circuit (Integrated Circuit, IC), etc., a photomask has become one of the indispensable important molds, and its application is becoming wider and wider. The PSM (Phase Shift Mask) Mask requires a second scan during fabrication to remove excess metal, but still has metal residues, which can damage the stripe pattern morphology of the chip pattern area during the chip fabrication process.
Disclosure of Invention
According to some embodiments, a first aspect of the present application provides a photomask, comprising: the test device comprises a first graph area and a first cutting channel area surrounding the first graph area, wherein a first test element group mark is arranged in the first cutting channel area, and a first gap is arranged between the side edge of the first test element group mark and the edge, adjacent to the first test element group mark, of the first cutting channel area along the width direction of the first cutting channel area.
Embodiments of the present application have at least the following advantages:
the first test element group mark in the photomask is positioned in the first cutting channel region, a first gap is formed between the side edge of the first test element group mark and the edge, adjacent to the first test element group mark, in the first cutting channel region, namely, a first gap is formed between the first test element group mark and the first pattern region, and in the manufacturing process of the photomask, the photoresist separates metal in the second scanning process, so that the metal in the first gap is removed, redundant metal residues are not generated on the photomask, and the influence of residual metal on the pattern region of the wafer chip is avoided.
In some embodiments, the first test element group mark has a rectangular shape, the side edges of the first test element group mark include a first side edge and a second side edge that are disposed in parallel, and the extending directions of the first side edge and the second side edge are the same as the extending directions of the first scribe line region, the edge of the first scribe line region includes a first edge and a second edge, the first edge is located on a side of the first side edge away from the second side edge, and the second edge is located on a side of the second side edge away from the first side edge;
the first side edge and the first edge have the first gap therebetween; and/or the number of the groups of groups,
the second side and the second edge have the first gap therebetween.
In some embodiments, the first gap a satisfies: a is more than or equal to 0.5 mu m.
In some embodiments, the width d of the first test element group mark 1 Width D of the first cutting path region 1 The following relationship is satisfied:
d 1 ≤λ 1 D 1
wherein lambda is 1 In the range of 80% -85%.
In some embodiments, the mask further comprises a second patterned region and a second scribe line region surrounding the second patterned region, the second scribe line region having an overlap region with the first scribe line region; the second cutting channel area is internally provided with a second test element group mark, the second test element group mark is positioned in the overlapping area, and the second test element group mark and the first test element group mark are arranged along a first direction, wherein the first direction is the arrangement direction of the first graph area and the second graph area;
along the first direction, a second gap is provided between a side edge of the second test element group mark and an edge of the second scribe line region adjacent to the second test element group mark.
In some embodiments, the shape of the second test element group mark is rectangular, the side edge of the second test element group mark includes a third side edge and a fourth side edge which are arranged in parallel, and the extension directions of the third side edge and the fourth side edge are the same as the extension direction of the second scribe line region, the edge of the second scribe line region includes a third edge and a fourth edge, the third edge is located on one side of the third side edge away from the fourth side edge, and the fourth edge is located on one side of the fourth side edge away from the third side edge;
the third side edge and the third edge have the second gap therebetween; and/or the number of the groups of groups,
the fourth side edge and the fourth edge have the second gap therebetween.
In some embodiments, the second gap b satisfies: b is more than or equal to 0.5 mu m.
In some embodiments, the width d of the second test element group mark 2 And the second cutting path area width D 2 The following relationship is satisfied:
d 2 ≤λ 2 D 2
wherein lambda is 2 In the range of 80% -85%.
In some embodiments, the first street region comprises a first sub-street region and a second sub-street region, wherein the first sub-street region is located between the second sub-street region and the first pattern region, and the second sub-street region surrounds the first sub-street region, the first sub-street region surrounds the first pattern region.
According to some embodiments, a second aspect of the present application provides a method for manufacturing a photomask, including:
providing a substrate;
performing first patterning treatment on the substrate to form a first pattern on the substrate, wherein the first pattern comprises a first graph area, a first sub-cutting channel area surrounding the first graph area and a first test element group mark, and an overlapping area exists between the first test element group mark and the first sub-cutting channel area; the distance between the first test element group mark and the first graph area is larger than the distance between the first sub-cutting area and the first graph area along the width direction of the first sub-cutting area;
performing a second patterning process on the substrate to form a second pattern on the first pattern of the substrate, the second pattern including a second sub-scribe line region and a second test element group mark; the second sub-scribe line region surrounds the first sub-scribe line region to form a first scribe line region with the first sub-scribe line region; the first test element group mark and the second sub-dicing lane area have overlapping areas, the second test element group mark and the first sub-dicing lane area and the second sub-dicing lane area have overlapping areas, and the second test element group mark and the first test element group mark are arranged along a first direction; a first gap is formed between the edge of the first test element group mark and the edge of the first scribe line region adjacent to the first test element group mark along the first direction; a second gap is provided between the edge of the second test element group mark and the edge of the first scribe line region adjacent to the second test element group mark.
In some embodiments, the first gap a satisfies: a is more than or equal to 0.5 mu m.
In some embodiments, the width d of the first test element group mark 1 Width D of the first cutting path region 1 The following relationship is satisfied:
d 1 ≤λ 1 D 1
wherein lambda is 1 In the range of 80% -85%.
In some embodiments, the second gap b satisfies: b is more than or equal to 0.5 mu m.
In some embodiments, the width d of the second test element group mark 2 And the first cutting path area width D 1 The following relationship is satisfied:
d 2 ≤λ 2 D 1
wherein lambda is 2 In the range of 80% -85%.
According to some embodiments, a third aspect of the present application provides an exposure method, including:
providing a wafer, which comprises a plurality of exposure areas distributed in an array;
exposing the wafer with a mask as claimed in any one of the first aspects to form an exposure pattern in each of the exposed areas.
Drawings
FIG. 1 is a schematic diagram of a photomask according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a first exposure structure in a mask manufacturing process according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second exposure of the mask of FIG. 2;
fig. 4 a-4 d are schematic views illustrating a process flow of second exposure of a photomask according to an embodiment of the present invention.
Icon: 100-a first graphic region; 200-a first scribe line region; 300-first test element group markers; 400-a second graphical region; 500-a second scribe line region; 600-second test element group markers; 700-a substrate; 210-a first sub-scribe line region; 220-a second sub-scribe line region; 310-a first side; 320-a second side; 610-a third side; 620-fourth side; 710—a substrate; 720-a semitransparent film layer; 730-metal layer; 800 photoresist layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
According to some embodiments, as shown in fig. 1, a first aspect of the present application provides a photomask, comprising: the first pattern region 100 and the first scribe line region 200 surrounding the first pattern region 100, the first scribe line region 200 has the first test element group mark 300 therein, and a first gap is provided between a side of the first test element group mark 300 and an edge of the first scribe line region 200 adjacent to the first test element group mark 300 in the width direction of the first scribe line region 200.
Embodiments of the present application have at least the following advantages:
the first test element group mark 300 is located in the first scribe line region 200 in the photomask, and a first gap is formed between the side edge of the first test element group mark 300 and the edge of the first scribe line region 200 adjacent to the first test element group mark 300, i.e. a first gap is formed between the first test element group mark 300 and the first pattern region 100, and during the manufacturing process of the photomask, the photoresist separates the metal during the second scanning, so that the metal located in the first gap is removed, and no excessive metal remains on the photomask, thereby avoiding the influence of the residual metal on the pattern region of the wafer chip.
In some embodiments, the first test element group mark 300 is rectangular in shape, the sides of the first test element group mark 300 include a first side 310 and a second side 320 disposed in parallel, and the extending directions of the first side 310 and the second side 320 are the same as the extending direction of the first scribe line region 200, the edges of the first scribe line region 200 include a first edge and a second edge, the first edge is located on a side of the first side 310 away from the second side 320, and the second edge is located on a side of the second side 320 away from the first side 310;
a first gap is provided between the first side edge 310 and the first edge; and/or the number of the groups of groups,
the second side 320 has a first gap with the second edge.
Referring to fig. 1, the first scribe line region 200 is an annular region surrounding the first pattern region 100, a portion of the first scribe line region 200 corresponding to the first test element group mark 300 is a bar shape extending in the X direction, and the first side edge 310 and the second side edge 320 of the first test element group mark 300 both extend in the X direction; the first side edge 310 is adjacent to the first edge, the second side edge 320 is adjacent to the second edge, a first gap a is provided between the first side edge 310 and the first edge, and a first gap a is provided between the second side edge 320 and the second edge. By reducing the width of the first test element group mark 300, i.e., the vertical distance between the first side edge 310 and the second side edge 320, the first test element group mark 300 has a margin from the first pattern region 100, so that the photoresist separates the metal layer 730, such as chromium, during the second scanning in the mask process, and no excessive metal remains on the mask.
In some embodiments, the first gap a satisfies: a is more than or equal to 0.5 mu m.
In a possible implementation, referring to fig. 1, the width of the first scribe line region 200 is 60 μm, the width of the first test element group mark 300 is 59 μm, the first gap between the first side edge 310 and the first edge is 0.5 μm, and the first gap between the second side edge 320 and the second edge is also 0.5 μm along the width direction of the first test element group mark 300.
It is understood that the value of the first gap between the first side edge 310 and the first edge and the value of the first gap between the second side edge 320 and the second edge may or may not be equal.
In some embodiments, with continued reference to FIG. 1, the width d of the first test element group mark 300 1 Width D with first scribe line region 200 1 The following relationship is satisfied:
d 1 ≤λ 1 D 1
wherein lambda is 1 In the range of 80% -85%.
In some embodiments, referring to fig. 1, the mask further includes a second pattern region 400 and a second scribe line region 500 surrounding the second pattern region 400, the second scribe line region 500 having an overlapping region with the first scribe line region 200; the second scribe line region 500 has a second test element group mark 600, where the second test element group mark 600 is located in the overlapping region, and the second test element group mark 600 and the first test element group mark 300 are arranged along a first direction, where the first direction is an arrangement direction of the first graphic region 100 and the second graphic region 400;
along the first direction, a second gap is provided between the side edge of the second test element group mark 600 and the edge of the second scribe line region 500 adjacent to the second test element group mark 600.
It should be noted that, in the process of exposing a wafer with a photomask, the wafer has a plurality of chip areas distributed in an array, the photomask has a pattern area corresponding to one or a group of chip areas, each pattern area is also distributed in an array, the chip area corresponding to each pattern area is a test group, and each test group corresponds to a test element group mark.
With continued reference to fig. 1, the first pattern region 100 and the second pattern region 400 are rectangular, and the first pattern region 100 and the second pattern region 400 are arranged in the Y direction, the first scribe line region 200 surrounds the outside of the first pattern region 100, the second scribe line region 500 surrounds the outside of the second pattern region 400, the first scribe line region 200 includes a first portion and a second portion extending in the X direction, and the first portion and the second portion are arranged in the Y direction, the second scribe line region 500 includes a third portion and a fourth portion extending in the X direction, and the third portion and the fourth portion are arranged in the Y direction, and the third portion and the second portion are completely overlapped. The first test element group indicia 300 is located in the first portion for cooperation with the first graphic area 100 and the second test element group indicia 600 is located in the third, second portion for cooperation with the second graphic area 400.
The second test element group mark 600 is located in the region where the second scribe line region 500 coincides with the first scribe line region 200, and a second gap is formed between the side edge of the second test element group mark 600 and the edge of the second scribe line region 500 or the edge of the first scribe line region 200 adjacent to the second test element group mark 600, that is, a second gap is formed between the second test element group mark 600 and the second pattern region 400, and during the process of manufacturing the photomask, the photoresist separates the metal during the second scanning, so that the metal located in the second gap is removed, and no excessive metal remains on the photomask, thereby avoiding the influence of the residual metal on the pattern region of the wafer chip.
The values of the first gap and the second gap may be equal or unequal.
In some embodiments, the shape of the second test element group mark 600 is rectangular, the side edge of the second test element group mark 600 includes a third side edge 610 and a fourth side edge 620 disposed in parallel, and the extension directions of the third side edge 610 and the fourth side edge 620 are the same as the extension direction of the second scribe line region 500, the edge of the second scribe line region 500 includes a third edge and a fourth edge, the third edge is located on the side of the third side edge 610 facing away from the fourth side edge 620, and the fourth edge is located on the side of the fourth side edge 620 facing away from the third side edge 610;
the third side 610 has a second gap between the third edge; and/or the number of the groups of groups,
the fourth side 620 has a second gap with the fourth edge.
Referring to fig. 1, the second scribe line region 500 is a ring-shaped region surrounding the second pattern region 400, a portion of the second scribe line region 500 corresponding to the second test element group mark 600 is a bar shape extending in the X direction, and the third side 610 and the fourth side 620 of the second test element group mark 600 each extend in the X direction; the third side 610 is adjacent to the third edge, the fourth side 620 is adjacent to the fourth edge, a second gap b is provided between the third side 610 and the third edge, and a second gap b is provided between the fourth side 620 and the fourth edge. By reducing the width of the second test element group mark 600, i.e., the vertical distance between the third side 610 and the fourth side 620, the second test element group mark 600 has a margin from the second pattern region 400, so that the photoresist separates the metal layer 730, such as chromium, during the second scan in the mask process, and no excessive metal remains on the mask.
In some embodiments, the second gap b satisfies: b is more than or equal to 0.5 mu m.
In a possible implementation, referring to fig. 1, the width of the second scribe line region 500 is 60 μm, the width of the second test element group mark 600 is 59 μm, the second gap between the third side 610 and the third edge is 0.5 μm, and the second gap between the fourth side 620 and the fourth edge is also 0.5 μm along the width direction of the second test element group mark 600.
It is understood that the value of the second gap between the third side edge 610 and the third edge and the value of the second gap between the fourth side edge 620 and the fourth edge may or may not be equal.
In some embodiments, with continued reference to FIG. 1, the width d of the second test element group mark 600 2 Width D of second scribe line region 500 2 The following relationship is satisfied:
d 2 ≤λ 2 D 2
wherein lambda is 2 In the range of 80% -85%.
In some embodiments, referring to fig. 2 and 3, the first street region 200 includes a first sub-street region 210 and a second sub-street region 220, wherein the first sub-street region 210 is located between the second sub-street region 220 and the first pattern region 100, and the second sub-street region 220 surrounds the first sub-street region 210, and the first sub-street region 210 surrounds the first pattern region 100.
According to some embodiments, referring to fig. 2 and 3, and in combination with fig. 4 a-4 d, a second aspect of the present application provides a method for manufacturing a photomask, including:
providing a substrate 700, wherein the substrate 700 comprises a substrate 710, a semitransparent film layer 720 positioned on one side of the substrate 710, and a metal layer 730 positioned on one side of the semitransparent film layer 720 away from the substrate 710, wherein the metal layer 730 can be made of metal chromium;
performing a first patterning process on the substrate 700 to form a first pattern on the substrate 700, the first pattern including a first pattern region 100, a first sub-scribe line region 210 surrounding the first pattern region 100, and a first test element group mark 300, and the first test element group mark 300 having an overlapping region with the first sub-scribe line region 210; the distance between the first test element group mark 300 and the first pattern region 100 is greater than the distance between the first sub-scribe line region 210 and the first pattern region 100 along the width direction of the first sub-scribe line region 210;
performing a second patterning process on the substrate 700 to form a second pattern on the first pattern of the substrate 700, the second pattern including the second sub-scribe line region 220 and the second test element group mark 600; the second sub-scribe line region 220 surrounds the first sub-scribe line region 210 to form the first scribe line region 200 with the first sub-scribe line region 210; the first test element group mark 300 and the second sub-scribe line region 220 have overlapping regions, and the second test element group mark 600 and the first sub-scribe line region 210 and the second sub-scribe line region 220 have overlapping regions, and the second test element group mark 600 and the first test element group mark 300 are arranged along the first direction; along a first direction, a first gap is provided between an edge of the first test element group mark 300 and an edge of the first scribe line region 200 adjacent to the first test element group mark 300; there is a second gap between the edge of the second test element group mark 600 and the edge of the first scribe line region 200 adjacent to the second test element group mark 600.
Embodiments of the present application have at least the following advantages:
during the process of manufacturing the mask, the first test element group mark 300 has a margin from the first pattern region 100, so that the photoresist separates the metal such as chromium as the metal layer 730 during the second scanning in the mask process, and no redundant metal remains on the mask.
Fig. 2 shows a first exposure of the mask during the process of manufacturing the mask, the first test element group mark 300 and the first sub-scribe line region 210 are light-transmitting regions, and the first pattern region 100 of the first mask is a light-shielding region, so that the first sub-scribe line region 210 and the first test element group mark 300 on the mask are exposed, and the second sub-scribe line region 220, the first pattern region 100 and the second test element group mark 600 on the mask are blocked.
Fig. 3 illustrates a second exposure of the mask during the process of manufacturing the mask, wherein the second test element group mark 600 and the second sub-scribe line region 220 are light-transmitting regions, and the first pattern region 100 of the second mask is a light-shielding region, such that the second sub-scribe line region 220 and the second test element group mark 600 on the mask are exposed, and the first sub-scribe line region 210, the first pattern region 100, and the first test element group mark 300 on the mask are blocked. Since the first test element group mark 300 in the mask has a margin from the first pattern region 100, no excessive metal remains on the mask, and thus the patterns in the chip region in the test group are not affected when the wafer is exposed.
Fig. 4 a-4 d illustrate a process of performing a second exposure of the substrate 700, referring to fig. 4a, coating a photoresist on the substrate 700 to form a photoresist layer 800; the substrate 700 coated with the photoresist is subjected to an exposure process, and a dotted line in fig. 4a is an exposure range; referring to fig. 4b, a patterned photoresist layer 800 is obtained by performing a developing operation on the exposed photoresist; referring to fig. 4c, the developed photoresist is etched; referring to fig. 4d, by etching the substrate 700 using the etching solution, metal such as chrome adjacent to the first pattern region 100 in the scribe line region is etched without residue.
In some embodiments, the first gap a satisfies: a is more than or equal to 0.5 mu m.
In some embodiments, the width d of the first test element group mark 300 1 Width D with first scribe line region 200 1 The following relationship is satisfied:
d 1 ≤λ 1 D 1
wherein lambda is 1 In the range of 80% -85%.
In some embodiments, the second gap b satisfies: b is more than or equal to 0.5 mu m.
In some embodiments, the width d of the second test element group mark 600 2 Width D from first scribe line region 200 1 The following relationship is satisfied:
d 2 ≤λ 2 D 1
wherein lambda is 2 In the range of 80% -85%.
According to some embodiments, a third aspect of the present application provides an exposure method, including:
providing a wafer, which comprises a plurality of exposure areas distributed in an array;
the wafer is exposed with any one of the embodiments of the first aspect to form an exposure pattern at each exposure area.
It should be noted that the wafer at least includes one test group, each test group includes a chip area and a dicing street surrounding the chip area, wherein the dicing street is provided with a first test element group matching with the test group and a second test element group matching with an adjacent test group. When the photomask provided by the embodiment of the first aspect of the application is used for exposing the wafer, the first cutting channel area corresponds to the cutting channel, the first graph area corresponds to the chip area, the first test element group mark corresponds to the first test element group, and the second test element group mark corresponds to the second test element group.
Embodiments of the present application have at least the following advantages:
the first test element group mark in the photomask has a margin, namely a first gap, from the first pattern area, so that metals such as chromium in the first gap are completely removed in the manufacturing process of the photomask, and the photomask cannot influence the bar patterns in the chip area when the wafer is exposed.
It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (15)

1. A photomask, comprising: the test device comprises a first graph area and a first cutting channel area surrounding the first graph area, wherein a first test element group mark is arranged in the first cutting channel area, and a first gap is arranged between the side edge of the first test element group mark and the edge, adjacent to the first test element group mark, of the first cutting channel area along the width direction of the first cutting channel area.
2. The photomask of claim 1 wherein the first test element group mark has a rectangular shape, the side edges of the first test element group mark include a first side edge and a second side edge that are arranged in parallel, and the first side edge and the second side edge both extend in the same direction as the first scribe line region, and the edge of the first scribe line region includes a first edge and a second edge, the first edge being located on a side of the first side edge that faces away from the second side edge, and the second edge being located on a side of the second side edge that faces away from the first side edge;
the first side edge and the first edge have the first gap therebetween; and/or the number of the groups of groups,
the second side and the second edge have the first gap therebetween.
3. The mask of claim 1, wherein the first gap a satisfies: a is more than or equal to 0.5 mu m.
4. The mask of claim 1 wherein the width d of the first test element group mark 1 Width D of the first cutting path region 1 The following relationship is satisfied:
d 1 ≤λ 1 D 1
wherein lambda is 1 In the range of 80% -85%.
5. The mask of claim 1, further comprising a second patterned region and a second scribe line region surrounding the second patterned region, the second scribe line region having an overlap with the first scribe line region; the second cutting channel area is internally provided with a second test element group mark, the second test element group mark is positioned in the overlapping area, and the second test element group mark and the first test element group mark are arranged along a first direction, wherein the first direction is the arrangement direction of the first graph area and the second graph area;
along the first direction, a second gap is provided between a side edge of the second test element group mark and an edge of the second scribe line region adjacent to the second test element group mark.
6. The photomask of claim 5, wherein the second test element group mark has a rectangular shape, the sides of the second test element group mark include a third side and a fourth side that are disposed in parallel, and the extension directions of the third side and the fourth side are the same as the extension direction of the second scribe line region, and the edges of the second scribe line region include a third edge and a fourth edge, the third edge being located on a side of the third side facing away from the fourth side, and the fourth edge being located on a side of the fourth side facing away from the third side;
the third side edge and the third edge have the second gap therebetween; and/or the number of the groups of groups,
the fourth side edge and the fourth edge have the second gap therebetween.
7. The mask of claim 5 wherein the second gap b satisfies: b is more than or equal to 0.5 mu m.
8. The mask of claim 5 wherein the width d of the second test element group mark 2 And the second cutting path area width D 2 The following relationship is satisfied:
d 2 ≤λ 2 D 2
wherein lambda is 2 In the range of 80% -85%.
9. The mask of claim 1, wherein the first street region comprises a first sub-street region and a second sub-street region, wherein the first sub-street region is located between the second sub-street region and the first pattern region, and the second sub-street region surrounds the first sub-street region, the first sub-street region surrounds the first pattern region.
10. A method of fabricating a photomask, comprising:
providing a substrate;
performing first patterning treatment on the substrate to form a first pattern on the substrate, wherein the first pattern comprises a first graph area, a first sub-cutting channel area surrounding the first graph area and a first test element group mark, and an overlapping area exists between the first test element group mark and the first sub-cutting channel area; the distance between the first test element group mark and the first graph area is larger than the distance between the first sub-cutting area and the first graph area along the width direction of the first sub-cutting area;
performing a second patterning process on the substrate to form a second pattern on the first pattern of the substrate, the second pattern including a second sub-scribe line region and a second test element group mark; the second sub-scribe line region surrounds the first sub-scribe line region to form a first scribe line region with the first sub-scribe line region; the first test element group mark and the second sub-dicing lane area have overlapping areas, the second test element group mark and the first sub-dicing lane area and the second sub-dicing lane area have overlapping areas, and the second test element group mark and the first test element group mark are arranged along a first direction; a first gap is formed between the edge of the first test element group mark and the edge of the first scribe line region adjacent to the first test element group mark along the first direction; a second gap is provided between the edge of the second test element group mark and the edge of the first scribe line region adjacent to the second test element group mark.
11. The method of manufacturing according to claim 10, wherein the first gap a satisfies: a is more than or equal to 0.5 mu m.
12. The method of claim 10, wherein the first test element group mark has a width d 1 Width D of the first cutting path region 1 The following relationship is satisfied:
d 1 ≤λ 1 D 1
wherein lambda is 1 In the range of 80% -85%.
13. The method of claim 10, wherein the second gap b satisfies: b is more than or equal to 0.5 mu m.
14. The method of claim 10, wherein the second test element group mark has a width d 2 And the first cutting path area width D 1 The following relationship is satisfied:
d 2 ≤λ 2 D 1
wherein lambda is 2 In the range of 80% -85%.
15. An exposure method, comprising:
providing a wafer, which comprises a plurality of exposure areas distributed in an array;
the wafer is exposed with a mask according to any one of claims 1-9 to form an exposure pattern in each of the exposure areas.
CN202111350363.4A 2021-11-15 2021-11-15 Photomask, manufacturing method thereof and exposure method Pending CN116125744A (en)

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JPH06104335A (en) * 1992-09-18 1994-04-15 Nippon Steel Corp Semiconductor wafer
TW417042B (en) * 2000-03-27 2001-01-01 Taiwan Semiconductor Mfg Method of making attenuated phase shift mask
KR100455684B1 (en) * 2001-01-24 2004-11-06 가부시끼가이샤 도시바 Focus monitoring method, exposure apparatus and mask for exposure
CN101592869B (en) * 2008-05-29 2012-05-16 中芯国际集成电路制造(北京)有限公司 Exposure equipment focal distance monitoring method
CN108459463A (en) * 2017-02-22 2018-08-28 中芯国际集成电路制造(上海)有限公司 A kind of light shield and preparation method thereof
CN112614803B (en) * 2020-12-30 2023-01-31 合肥晶合集成电路股份有限公司 Method for preparing integrated circuit

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117311108A (en) * 2023-11-30 2023-12-29 合肥晶合集成电路股份有限公司 Overlay mark and preparation method thereof
CN117311108B (en) * 2023-11-30 2024-04-05 合肥晶合集成电路股份有限公司 Overlay mark and preparation method thereof

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