CN108459463A - A kind of light shield and preparation method thereof - Google Patents
A kind of light shield and preparation method thereof Download PDFInfo
- Publication number
- CN108459463A CN108459463A CN201710097117.XA CN201710097117A CN108459463A CN 108459463 A CN108459463 A CN 108459463A CN 201710097117 A CN201710097117 A CN 201710097117A CN 108459463 A CN108459463 A CN 108459463A
- Authority
- CN
- China
- Prior art keywords
- light shield
- central area
- pattern
- target pattern
- alignment mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention provides a kind of light shields and preparation method thereof.The light shield includes the central area for being used to form target pattern and the peripheral region on the outside of the central area, and the mask pattern of shading is both provided in the central area and the peripheral region, using as alignment mark.The alignment mark formed in the central area and peripheral region of the light shield is disposed as the mask of shading by the present invention, it is directed at not accurate enough problem with the central area and peripheral region of eliminating light shield, to further increase the performance and yield of the device being prepared by the light shield.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of light shield and preparation method thereof.
Background technology
In consumer electronics field, multifunctional equipment is increasingly liked by consumer, compared to the simple equipment of function,
Multifunctional equipment manufacturing process will be more complicated, for example need to integrate the chip of multiple and different functions in circuit version, thus go out
3D integrated circuits (integrated circuit, IC) technology, 3D integrated circuits (integrated circuit, IC) quilt are showed
It is defined as a kind of system-level integrated morphology, multiple chips are stacked in vertical plane direction, to save space.
Wherein, it either usually requires to prepare various patterns between wafer or the material layer of different layers in different layers chip,
It is aligned between levels, such as bottom metal layers is usually prepared in the interconnection structure of device, in bottom gold
Belong to and form through-hole on layer, metal layer at top is formed on through-hole, wherein as the reduction of device size is difficult by through-hole and bottom
Metal layer is aligned, once it cannot be aligned, then component failure, it is therefore desirable to alignment detection is carried out, alignment detection is exactly to pass through inspection
Whether current layer pattern offsets with preceding layer pattern overlay, it is ensured that the levels of the device in device connect deviation in acceptable model
In enclosing.
At present after detecting (After develop inspection, ADI) after alignment detection includes development and etching
It detects (After etch inspection, AEI), wherein have larger variable so that optimizing between ADI and AEI
AEI becomes worse after ADI.Therefore it needs to be improved alignment mark.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
In order to overcome the problems, such as that presently, there are an embodiment of the present invention provides a kind of light shield, the light shield includes being used for shape
Central area at target pattern and the peripheral region on the outside of the central area, the central area and the peripheral region
The mask pattern of shading is both provided in domain, using as alignment mark.
Optionally, the alignment mark is formed in the Cutting Road in the central area and the peripheral region.
Optionally, in the central area, the target pattern rule is arranged as pattern array, the pattern array
It is spaced by Cutting Road.
Optionally, the alignment mark being located in the peripheral region is arranged around the central area.
Optionally, the light shield includes：
Transparent substrate；
Light shield layer is located on the substrate, the pattern of the alignment mark is formed in the light shield layer.
Optionally, the light shield layer includes chromium metal layer.
Optionally, the target pattern is the target pattern of light transmission.
The present invention also provides a kind of preparation method of light shield, the method includes：
Target pattern is formed in the central area of the light shield；
It is respectively formed the mask pattern of shading in the peripheral region of the light shield and the central area, using as to fiducial mark
Note.
Optionally, the target pattern is the target pattern of light transmission.
Optionally, the forming method of the target pattern of the light transmission includes：
While forming the mask pattern of the shading, the target pattern of shading is formed；
The alignment key pattern in the central area is blocked, the target pattern of the shading is exposed
Light, so that the target pattern of the shading is converted into the target pattern of light transmission.
Optionally, the light shield includes：Transparent substrate；Light shield layer is located on the substrate；
The forming method of the mask pattern of the shading and the target pattern of shading includes：
Patterned masking layer is formed on the light shield layer；
The light shield layer is performed etching using the Patterned masking layer as mask, to be formed simultaneously the mask of the shading
The target pattern of pattern and the shading.
Optionally, the light shield layer includes chromium metal layer.
Optionally, the alignment mark is formed in the Cutting Road in the central area and the peripheral region.
Optionally, in the central area, the target pattern rule is arranged as pattern array, the pattern array
It is spaced by Cutting Road.
Optionally, the alignment mark being located in the peripheral region is arranged around the central area.
It is not accurate enough in order to solve the problems, such as to be aligned present in current technique, the alignment mark is improved,
It covers (lighttight) that the alignment mark formed in the central area and peripheral region of the light shield is disposed as to shading
Film is directed at not accurate enough problem, to further increase through the light shield with the central area and peripheral region of eliminating light shield
The performance and yield for the device being prepared.
Description of the drawings
The following drawings of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Fig. 1 is the vertical view of the light shield of the prior art；
The vertical view of light shield in Fig. 2 one embodiment of the invention；
The preparation technology flow chart of light shield in Fig. 3 one embodiment of the invention.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the areas Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then element or layer between two parties is not present.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relationship term intention further includes making
With the different orientation with the device in operation.For example, if the device in attached drawing is overturn, then, it is described as " under other elements
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related Listed Items and institute
There is combination.
It describes to send out herein with reference to the cross-sectional view of the schematic diagram of the desirable embodiment (and intermediate structure) as the present invention
Bright embodiment.As a result, it is contemplated that due to caused by such as manufacturing technology and/or tolerance from the variation of shown shape.Therefore,
The embodiment of the present invention should not necessarily be limited to the specific shape in area shown here, but include due to for example manufacturing caused shape
Shape deviation.For example, be shown as the injection region of rectangle its edge usually there is circle or bending features and/or implantation concentration ladder
Degree, rather than the binary from injection region to non-injection regions changes.Equally, the disposal area can be led to by injecting the disposal area formed
Some injections in area between the surface passed through when injection progress.Therefore, the area shown in figure is substantially schematic
, their shape is not intended the true form in the area of display device and is not intended to limit the scope of the present invention.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions
Outside, the present invention can also have other embodiment.
At present in semiconductor device fabrication processes, it usually needs be aligned, usually existed between the different layers
Light shield forms alignment mark and the alignment mark is transferred to lower layer, is aligned when forming device, but how accurate
Alignment as device performance height key, as shown in Figure 1, when device includes central area and peripheral region, around
There is good effect and alignment precision, but then yield is very in central area when alignment mark being transferred on wafer in region
Difference.
In order to solve this problem, inventor has carried out a large amount of experiment in conjunction with the experience of oneself to the reason of alignment precision difference
And analysis：
Due to the effect of Moore's Law, integrated circuit item width becomes smaller and smaller, the pattern dimension formed on chip
Reduce therewith.To form fine pattern, it is used widely using the photoetching process of mask.In a lithographic process, photoresist applies
It overlays in material layer, light is then passed through by being radiated on a part of photoresist with scheduled, light shield pattern mask
The radiant section that photoresist layer is removed using the developing process of developing solution, to form photoresist layer pattern.Hereafter, pass through photoetching
Glue-line pattern exposes a part of material layer, using photoresist layer pattern as etching mask so that the portion of the exposure of material layer
Divide and is got rid of by etching technics.In such manner, it is possible to the pattern of forming material layer, the pattern of the material layer corresponds to mask
Light shield pattern.
In mask fabrication process, the substrate used usually has binary intensity mask (binary mask, Binary Mask)
With attenuated phase shift mask.Wherein binary mask includes：Quartz base plate, the lighttight light shield layer being plated on quartz base plate
(such as chromium metal film), the light sensitive photoresist being plated on chromium metal film.
Wherein, due to form the mask pattern of target pattern in central area in device fabrication process, it is therefore desirable to
The alignment mark for being exposed, and being located in this process in the central area to central area can be also exposed simultaneously,
Light shield layer after being exposed on the alignment mark can then become the phase-shift mask (phase with 6% penetrance
Shift mask, PSM), wherein the light shield layer in the phase-shift mask is gray scale, usually there is 6% penetrance, gray scale to cover
Mould and binary mask the difference is that：Gray scale mask can provide the transmitance of variation in mask plane different location, pass through
Required diffraction optical element is obtained after crossing a photoetching process and etching process, as shown in Figure 1.
Since central area needs to be exposed the mask pattern of target pattern, lead to for simplicity in this process
Can often exposure be carried out at the same time to the alignment mark of the central area, and inventor is had found by above-mentioned analysis just because of to institute
The alignment mark for stating central area has carried out exposing the alignment mark and peripheral region for just leading to make the central area
Alignment mark is inconsistent, and the alignment mark through overexposure rear center region has certain light transmittance and then causes to be directed at performance
It is deteriorated.
Inventor has found the reason of central area is directed at poor performance by above-mentioned experiment and analysis, and is improved,
Provide a kind of new light shield：
The light shield includes the central area for being used to form target pattern and the peripheral region on the outside of the central area
The mask pattern of shading is both provided in domain, the central area and the peripheral region, using as alignment mark.
It is not accurate enough in order to solve the problems, such as to be aligned present in current technique, the alignment mark is improved,
(i.e. lighttight) of forming the alignment mark in the central area and peripheral region of the light shield and be disposed as shading is covered
Film is directed at not accurate enough problem, to further increase through the light shield with the central area and peripheral region of eliminating light shield
The performance and yield for the device being prepared.
Embodiment one
Inventor has found the reason of central area is directed at poor performance by above-mentioned experiment and analysis, and is improved,
Provide a kind of new light shield：
As shown in Fig. 2, the light shield includes being used to form the central area of target pattern and outside the central area
The mask pattern of shading is both provided in the peripheral region of side, the central area and the peripheral region, using as to fiducial mark
Note.
Shading in the present invention refer to it is lighttight, i.e., the light shield layer on light shield is not exposed,
Light transmittance is zero.
Wherein, there is no stringent division regions for the central area of the light shield and fringe region, wherein the center
Domain is used to form target pattern, is normally at the central part of the light shield, such as the region that alignment mark A1-A13 is surrounded in Fig. 2
As central area.
The wherein described peripheral region is located at the outside of the central area, such as the peripheral region is located at the center
The surrounding in domain surrounds the central area, is used to form other auxiliary patterns such as detection structure or alignment mark.
The type of the target pattern is not limited to a certain kind in the present invention, can be the structure of any semiconductor devices
At the element etc. of component, such as the element of MOS transistor, MEMS device, it is not limited to a certain.
Wherein target pattern rule is arranged in the central area, for example, can rule be arranged as several rows and
Several columns, as described in Figure 2, the target pattern form 4 rows, and 3 target patterns are arranged in each between-line spacing, adjacent
It is provided with Cutting Road between target pattern described in per a line, the alignment mark B1-B6 is set in the Cutting Road.
The wherein described alignment mark A1-A13 is then set in the Cutting Road of the peripheral region, as shown in Figure 2.
Wherein, the pattern of the alignment mark of the shading can be square structure, such as square or rectangular, Ke Yiwei
Round or polygon, even irregular figure.It is preferably square in this embodiment.
Can also include various grooves or raised structure in the pattern of the alignment mark, on the wafer
The alignment mark is formed to be more clear later and be convenient for searching, mark.
Wherein, the alignment mark in the central area and the peripheral region is lighttight, is binary
Mask (Binary Mask), thus there is no difference for the alignment mark in the central area and the peripheral region, and
And it can realize good alignment precision.
Wherein, the binary mask includes substrate and the light shield layer on the substrate.
Wherein, the substrate is transparent material, such as quartz base plate, it should be understood that the substrate not office
It is limited to quartz base plate, other substrates commonly used in the art can also be selected, details are not described herein.
Wherein, the light shield layer is lighttight light shield layer, such as the light shield layer can select chromium metal layer, but is needed
To illustrate that the light shield layer is not limited to chromium metal layer, other light shield layers commonly used in the art can also be selected,
This is repeated no more.
Optionally, only a step light sensitive photoresist can also be formed in the light shield layer, wherein the light sensitive photoresist is used
It is patterned in the light shield layer, to form the pattern of alignment mark.
The wherein described light sensitive photoresist is formed in by the method for coating on the light shield layer, and details are not described herein.
It is not accurate enough in order to solve the problems, such as to be aligned present in current technique, the alignment mark is improved,
It is disposed as lighttight mask by the alignment mark is formed in the central area and peripheral region of the light shield, to eliminate light
The central area and peripheral region of cover are directed at not accurate enough problem, to further increase the device being prepared by the light shield
The performance and yield of part.
Embodiment two
In the following, being illustrated to the preparation method of the light shield of the present invention with reference to Fig. 2 and Fig. 3.Wherein, Fig. 2 present invention
An embodiment in light shield vertical view；The preparation technology flow chart of light shield in Fig. 3 one embodiment of the invention.
Wherein, the preparation technology flow chart of the light shield in Fig. 3 one embodiment of the invention includes specifically：
Step S1：Target pattern is formed in the central area of the light shield；
Step S2：Be respectively formed the mask pattern of shading in the peripheral region of the light shield and the central area, using as
Alignment mark.
The preparation method of the light shield of the present embodiment, specifically comprises the following steps：
Execute step 1, light shield be provided, the light shield include central area and on the outside of the central area around
Region.
Specifically, the light shield includes being used to form the central area of target pattern and on the outside of the central area
The binary mask of impermeable photomask pattern is both provided in peripheral region, the central area and the peripheral region, using as
Alignment mark.
Wherein, there is no stringent division regions for the central area of the light shield and fringe region, wherein the center
Domain is used to form target pattern, is normally at the central part of the light shield, such as the region that alignment mark A1-A13 is surrounded in Fig. 2
As central area.
The wherein described peripheral region is located at the outside of the central area, such as the peripheral region is located at the center
The surrounding in domain surrounds the central area, is used to form other auxiliary patterns such as assay intervals or alignment mark.
Step 2 is executed, while forming the mask pattern as the shading of alignment mark, forms the institute of shading
State target pattern.
Specifically, the type of the target pattern is not limited to a certain kind in the present invention, can be any semiconductor
The component parts of device, for example, the element of MOS transistor, MEMS device element etc., it is not limited to it is a certain.
Wherein target pattern rule is arranged in the central area, for example, can rule be arranged as several rows and
Several columns, as described in Figure 2, the target pattern form 4 rows, and 3 target patterns are arranged in each between-line spacing, adjacent
It is provided with Cutting Road between target pattern described in per a line, the alignment mark B1-B6 is set in the Cutting Road.
The wherein described alignment mark A1-A13 is then set in the Cutting Road of the peripheral region, as shown in Figure 2.
Wherein, the pattern of the alignment mark of the shading can be square structure, such as square or rectangular, Ke Yiwei
Round or polygon, even irregular figure.It is preferably square in this embodiment.
Can also include various grooves or raised structure in the pattern of the alignment mark, on the wafer
The alignment mark is formed to be more clear later and be convenient for searching, mark.
Wherein, the light shield includes substrate and the light shield layer on the substrate.
Wherein, the substrate is transparent material, such as quartz base plate, it should be understood that the substrate not office
It is limited to quartz base plate, other substrates commonly used in the art can also be selected, details are not described herein.
Wherein, the light shield layer is lighttight light shield layer, such as the light shield layer can select chromium metal layer, but is needed
To illustrate that the light shield layer is not limited to chromium metal layer, other light shield layers commonly used in the art can also be selected,
This is repeated no more.
Optionally, only a step light sensitive photoresist can also be formed in the light shield layer, wherein the light sensitive photoresist is used
It is patterned in the light shield layer, to form the pattern of alignment mark.
The wherein described light sensitive photoresist is formed in by the method for coating on the light shield layer, and details are not described herein.
Further, the light shield manufacture process illustrates, and includes specifically：
Step 1, on the substrate for being coated with crome metal film, coating photoresist layer；
Step 2 carries out patterned process to photoresist layer, and mask graph is transferred on photoresist layer；
In this step, it is exactly that photoresist layer is exposed and is developed to carry out patterned process.
Step 3, using the photoresist mask graph on photoresist layer as protective layer, to chromium metal film carry out wet etching,
Mask graph is formed on chromium metal film.
Step 4, removal photoresist layer.
On this basis, wherein the forming method of the mask pattern of the shading and the target pattern of shading includes：
Patterned masking layer is formed on the light shield layer；
The light shield layer is performed etching using the Patterned masking layer as mask, to be formed simultaneously the mask of the shading
The target pattern of pattern and the shading.
Step 3 is executed, the alignment key pattern in the central area is blocked, to the mesh of the shading
Case of marking on a map is exposed, so that the target pattern of the shading is converted into the target pattern of light transmission.
Specifically, the target pattern on the light shield is exposed, while by the alignment in the central area
Indicia patterns are blocked, while the target pattern to form light transmission on the light shield, in the central area and
Lighttight mask pattern is formed in the peripheral region, using as alignment mark.
Specifically, it finds to carry out due to the alignment mark of the central area by the research of inventor in this step
Exposure, therefore become phase-shift mask (phase shift mask, PSM), wherein the light shield layer in the phase-shift mask is gray scale
, usually with 6% penetrance, reduced so as to cause alignment precision.
And usually the alignment mark of the central area can be all exposed in technique at present, because of the institute of central area
It states in the Cutting Road that alignment mark is set between target pattern, therefore when being exposed to target pattern typically together by institute
Alignment mark is stated to be exposed because operate in this way it is simpler, before not finding that it can cause the reduction of alignment precision
It is that not will recognize that processing step to be increased, target pattern is carried out again after the alignment mark of the central area is blocked
Exposure.
Inventor increases processing step in order to improve precision, in described by testing and analysis is found that the problem
The alignment mark in heart district domain is blocked, to avoid the light shield layer in the alignment mark to central area
It is exposed, keeps lighttight mask pattern.
By it is described improvement the central area and the peripheral region in the alignment mark be it is lighttight,
For binary mask (Binary Mask), thus the alignment mark in the central area and the peripheral region is not present
Difference, and can realize good alignment precision.
It is not accurate enough in order to solve the problems, such as to be aligned present in current technique, the alignment mark is improved,
It is disposed as lighttight binary mask by the alignment mark is formed in the central area and peripheral region of the light shield, to disappear
Except the central area of light shield and peripheral region are directed at not accurate enough problem, it is prepared by the light shield with further increasing
Device performance and yield.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (15)
1. a kind of light shield, which is characterized in that the light shield includes being used to form the central area of target pattern and in described
The mask pattern of shading is both provided in the peripheral region of heart areas outside, the central area and the peripheral region, to make
For alignment mark.
2. light shield according to claim 1, which is characterized in that the alignment mark is formed in the central area and described
In Cutting Road in peripheral region.
3. light shield according to claim 1, which is characterized in that in the central area, the target pattern rule
It is arranged as pattern array, the pattern array is spaced by Cutting Road.
4. light shield according to claim 3, which is characterized in that the alignment mark being located in the peripheral region is surround
The central area setting.
5. light shield according to claim 1, which is characterized in that the light shield includes：
Transparent substrate；
Light shield layer is located on the substrate, the pattern of the alignment mark is formed in the light shield layer.
6. light shield according to claim 5, which is characterized in that the light shield layer includes chromium metal layer.
7. light shield according to claim 1, which is characterized in that the target pattern is the target pattern of light transmission.
8. a kind of preparation method of light shield, which is characterized in that the method includes：
Target pattern is formed in the central area of the light shield；
It is respectively formed the mask pattern of shading in the peripheral region of the light shield and the central area, using as alignment mark.
9. according to the method described in claim 8, it is characterized in that, the target pattern is the target pattern of light transmission.
10. according to the method described in claim 9, it is characterized in that, the forming method of the target pattern of the light transmission includes：
While forming the mask pattern of the shading, the target pattern of shading is formed；
The alignment key pattern in the central area is blocked, the target pattern of the shading is exposed,
So that the target pattern of the shading is converted into the target pattern of light transmission.
11. according to the method described in claim 10, it is characterized in that, the light shield includes：Transparent substrate；Light shield layer, position
In on the substrate；
The forming method of the mask pattern of the shading and the target pattern of shading includes：
Patterned masking layer is formed on the light shield layer；
The light shield layer is performed etching using the Patterned masking layer as mask, to be formed simultaneously the mask pattern of the shading
With the target pattern of the shading.
12. according to the method for claim 11, which is characterized in that the light shield layer includes chromium metal layer.
13. according to the method described in claim 8, it is characterized in that, the alignment mark is formed in the central area and institute
It states in the Cutting Road in peripheral region.
14. according to the method described in claim 8, it is characterized in that, in the central area, the target pattern rule
It is arranged as pattern array, the pattern array is spaced by Cutting Road.
15. according to the method described in claim 8, it is characterized in that, being located at the alignment mark ring in the peripheral region
It is arranged around the central area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710097117.XA CN108459463A (en) | 2017-02-22 | 2017-02-22 | A kind of light shield and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710097117.XA CN108459463A (en) | 2017-02-22 | 2017-02-22 | A kind of light shield and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108459463A true CN108459463A (en) | 2018-08-28 |
Family
ID=63220088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710097117.XA Pending CN108459463A (en) | 2017-02-22 | 2017-02-22 | A kind of light shield and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108459463A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459134A (en) * | 2019-03-07 | 2019-11-15 | 友达光电股份有限公司 | Array substrate |
| CN111198478A (en) * | 2018-11-20 | 2020-05-26 | 长鑫存储技术有限公司 | Mask assembly and registration measuring method |
| CN113534602A (en) * | 2021-07-16 | 2021-10-22 | 长鑫存储技术有限公司 | Photomask and preparation method thereof |
| WO2022166080A1 (en) * | 2021-02-02 | 2022-08-11 | 长鑫存储技术有限公司 | Photomask forming method and photomask |
| WO2023082411A1 (en) * | 2021-11-15 | 2023-05-19 | 长鑫存储技术有限公司 | Photomask, and manufacturing method and exposure method therefor |
| CN117518709A (en) * | 2023-11-07 | 2024-02-06 | 广州新锐光掩模科技有限公司 | Photomask and overlay error measurement method |
| CN117631437A (en) * | 2024-01-25 | 2024-03-01 | 合肥晶合集成电路股份有限公司 | Mask structure and method for placing alignment marks of semiconductor wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10213895A (en) * | 1997-01-30 | 1998-08-11 | Sony Corp | Mark for measurement of positioning in reticle |
| JPH10319574A (en) * | 1997-05-22 | 1998-12-04 | Sony Corp | Reticle |
| KR20100020300A (en) * | 2008-08-12 | 2010-02-22 | 주식회사 동부하이텍 | Mask of wafer for semi-conductor |
| CN102262349A (en) * | 2010-05-24 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Mask plate for semiconductor technique |
| CN104216234A (en) * | 2013-06-05 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting light source symmetry of lithography system |
-
2017
- 2017-02-22 CN CN201710097117.XA patent/CN108459463A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10213895A (en) * | 1997-01-30 | 1998-08-11 | Sony Corp | Mark for measurement of positioning in reticle |
| JPH10319574A (en) * | 1997-05-22 | 1998-12-04 | Sony Corp | Reticle |
| KR20100020300A (en) * | 2008-08-12 | 2010-02-22 | 주식회사 동부하이텍 | Mask of wafer for semi-conductor |
| CN102262349A (en) * | 2010-05-24 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Mask plate for semiconductor technique |
| CN104216234A (en) * | 2013-06-05 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting light source symmetry of lithography system |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111198478A (en) * | 2018-11-20 | 2020-05-26 | 长鑫存储技术有限公司 | Mask assembly and registration measuring method |
| CN111198478B (en) * | 2018-11-20 | 2024-02-06 | 长鑫存储技术有限公司 | Mask assembly and registration measurement method |
| CN110459134A (en) * | 2019-03-07 | 2019-11-15 | 友达光电股份有限公司 | Array substrate |
| WO2022166080A1 (en) * | 2021-02-02 | 2022-08-11 | 长鑫存储技术有限公司 | Photomask forming method and photomask |
| CN113534602A (en) * | 2021-07-16 | 2021-10-22 | 长鑫存储技术有限公司 | Photomask and preparation method thereof |
| CN113534602B (en) * | 2021-07-16 | 2024-05-14 | 长鑫存储技术有限公司 | Method for preparing photomask and photomask |
| WO2023082411A1 (en) * | 2021-11-15 | 2023-05-19 | 长鑫存储技术有限公司 | Photomask, and manufacturing method and exposure method therefor |
| CN117518709A (en) * | 2023-11-07 | 2024-02-06 | 广州新锐光掩模科技有限公司 | Photomask and overlay error measurement method |
| CN117631437A (en) * | 2024-01-25 | 2024-03-01 | 合肥晶合集成电路股份有限公司 | Mask structure and method for placing alignment marks of semiconductor wafer |
| CN117631437B (en) * | 2024-01-25 | 2024-05-07 | 合肥晶合集成电路股份有限公司 | Method for placing alignment marks of semiconductor wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108459463A (en) | A kind of light shield and preparation method thereof | |
| US9239516B2 (en) | Method of manufacturing reflective extreme ultraviolet mask | |
| US6815308B2 (en) | Use of a dual-tone resist to form photomasks including alignment mark protection, intermediate semiconductor device structures and bulk semiconductor device substrates | |
| US5989754A (en) | Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD) | |
| US7179570B2 (en) | Chromeless phase shift lithography (CPL) masks having features to pattern large area line/space geometries | |
| US20030207584A1 (en) | Patterning tighter and looser pitch geometries | |
| KR20050063725A (en) | Method for providing layout design and photo mask | |
| CN113066715A (en) | Photomask assembly, patterned mask and forming method thereof, and forming method of active region | |
| CN110197821B (en) | Structure and method for improving overlapping performance in semiconductor device | |
| US8524424B2 (en) | Optical proximity correction photomask | |
| US7745067B2 (en) | Method for performing place-and-route of contacts and vias in technologies with forbidden pitch requirements | |
| US8972912B1 (en) | Structure for chip extension | |
| US6635388B1 (en) | Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift mask | |
| CN102646576A (en) | Method for fabricating semiconductor devices with fine patterns | |
| TWI694490B (en) | Method of manufacturing semiconductor structure | |
| US7063921B2 (en) | Photomask, in particular alternating phase shift mask, with compensation structure | |
| US20080252867A1 (en) | Overlay mark, and fabrication and application of the same | |
| US20170098601A1 (en) | Mask and metal wiring of a semiconductor device formed using the same | |
| US5817437A (en) | Method for detecting phase error of a phase shift mask | |
| US11726400B2 (en) | Lithography process method for defining sidewall morphology of lithography pattern | |
| US11067895B2 (en) | Method and structures for personalizing lithography | |
| KR101090468B1 (en) | Photomask for forming contact hole and method of forming the contact hole using the same | |
| CN101443702A (en) | Tri-tone trim mask for alternating phase-shift photolithography | |
| US20030068580A1 (en) | Ceramic shadow-mask in IC process flow | |
| TW561312B (en) | A phase shift mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180828 |
|
| RJ01 | Rejection of invention patent application after publication |