CN113130303B - Mask and triple patterning method - Google Patents
Mask and triple patterning method Download PDFInfo
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- CN113130303B CN113130303B CN201911423432.2A CN201911423432A CN113130303B CN 113130303 B CN113130303 B CN 113130303B CN 201911423432 A CN201911423432 A CN 201911423432A CN 113130303 B CN113130303 B CN 113130303B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
A mask and a triple patterning method, wherein the mask comprises a first mask, a second mask and a third mask; the first mask plate comprises a first rectangular window graph; the second mask plate comprises a second rectangular window graph; the third mask plate comprises a third non-rectangular window graph; the first rectangular window, the second rectangular window and the third rectangular window are spliced to form a preset target non-rectangular window; the target non-rectangular window is used for defining a region of the surface of the substrate, from which the fin portion is to be etched. According to the scheme, the fact that rounding (rounding) phenomenon at the L-shaped corner in the photoetching process affects the actual size of the preset non-rectangular pattern of the fin part can be avoided, and therefore the performance of a device formed later can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a mask plate and a triple patterning method.
Background
Integrated Circuit (IC) technology is continually being improved, which generally involves scaling down the device geometry to achieve lower manufacturing costs, higher device integration density, higher speed, and better performance. Photolithography (photolithography) is a commonly used patterning method in semiconductor manufacturing processes. However, the photolithographic process limits the minimum pitch (pitch) of the patterns formed and thus limits the development of integrated circuits to smaller size and higher density.
The triple patterning (Triple Patterning, TP) can improve the problem of optical proximity effect, and the method can increase the density of patterns formed on a substrate and further reduce the spacing between adjacent lines, so that the limitation of the photoetching process on the field of semiconductor manufacturing can be eliminated. Triple patterning breaks down a set of high density patterns into three separate, lower density patterns. Specifically, splitting a pattern to be formed into a first pattern, a second pattern and a third pattern, and then respectively performing three patterning on a mask plate to finally form a complete pattern.
However, the quality of the pattern formed by the triple patterning method in the prior art is still to be improved.
Disclosure of Invention
The invention solves the technical problem of how to improve the quality of the patterns formed by a triple patterning method.
In order to solve the technical problems, the embodiment of the invention provides a mask plate, which is used for carrying out graphical processing on a substrate; the substrate comprises a plurality of fin parts extending along a first direction and a spacing region positioned between the fin parts; the mask comprises a first mask, a second mask and a third mask;
the first mask plate comprises a first rectangular window graph; the first rectangular window graph is used for defining a first rectangular window for cutting the fin part on the substrate along a first direction;
the second mask plate comprises a second rectangular window graph; the second rectangular window graph is used for defining a second rectangular window for cutting the fin part on the substrate along the first direction;
the third mask plate comprises a third non-rectangular window graph; the second direction is perpendicular to the first direction; the third rectangular window pattern is used for defining a third non-rectangular window for cutting the fin part on the substrate along the second direction; the second direction is perpendicular to the first direction;
the first rectangular window, the second rectangular window and the third rectangular window are spliced to form a preset target non-rectangular window; the target non-rectangular window is used for defining a region of the surface of the substrate, from which the fin portion is to be etched.
Optionally, the target non-rectangular window includes a first boundary and a second boundary extending along a first direction; the first boundaries are sequentially connected by first edges extending along a first direction and second edges extending along a second direction which are alternately arranged to form a step shape, so that the distance between the first boundaries and the second boundaries is gradually reduced to a preset minimum distance;
starting from a minimum spacing area in a target non-rectangular window, arranging a first rectangular window and a second rectangular window in a staggered manner along steps of a first boundary, and arranging a second rectangular window and a first rectangular window in sequence along a second boundary; the first rectangular window and the second rectangular window which are arranged on the corresponding steps of the first boundary respectively extend along the first edge of the corresponding steps in the first direction and extend out by a first preset distance; the first rectangular window and the second rectangular window arranged on the corresponding step of the first boundary have the same size in the second direction as the second side of the corresponding step; one end of the first rectangular window arranged along the second boundary extends to the minimum spacing region by a second preset distance, and is adjacently stacked with one end of the first rectangular window arranged on the step of the minimum spacing region of the first boundary in the second direction to form a communication region;
and arranging a third non-rectangular window in the target non-rectangular window except the first rectangular window graph and the second rectangular window graph.
Optionally, the sum of the dimensions of the fin portion and the spacer on the substrate along the second direction is 1 pitch, and the preset minimum pitch is 2 pitches.
Optionally, the first preset distance is 1/2CPP.
Optionally, the second preset distance is 1CPP.
Optionally, when the substrate surface further includes a rectangular removal window other than the target non-rectangular window and the dimension of the first rectangular window pattern arranged along the second boundary along the second direction is 1 pitch, the first reticle or the second reticle further includes a rectangular removal window pattern corresponding to the rectangular removal window.
Optionally, when the substrate surface further includes a rectangular removal window other than the target non-rectangular window and the dimension of the first rectangular window pattern along the second boundary is 2 pitches along the second direction, the second reticle further includes a rectangular removal window pattern corresponding to the rectangular removal window.
The embodiment of the invention provides a method for triple patterning of a mask, which comprises the following steps:
providing a substrate comprising a fin extending along a first direction;
forming a first patterning mask layer on the substrate and the fin portion; the first patterned mask layer includes a first rectangular window extending along a first direction;
etching the fin parts in the first rectangular window patterns by taking the patterned first patterning mask layer as a mask to form first patterns of the fin parts;
forming a second patterning mask layer on the substrate and the fin part; the second patterned mask layer includes a second rectangular window extending along the first direction;
etching the fin parts in the second rectangular window patterns by taking the patterned second patterning mask layer as a mask, and forming second patterns of the fin parts; the third patterned mask layer includes a third non-rectangular window extending along a second direction;
forming a third patterning mask layer on the substrate and the fin part; the third patterned mask layer comprises a third non-rectangular window pattern; the second direction is perpendicular to the first direction;
etching the fin part in the third non-rectangular window graph by taking the patterned third patterning mask layer as a mask to form a preset non-rectangular pattern of the fin part;
the first rectangular window, the second rectangular window and the third rectangular window are spliced to form a preset target non-rectangular window; the target non-rectangular window is used for defining a region of the surface of the substrate, from which the fin portion is to be etched.
Optionally, the target non-rectangular window includes first and second boundaries extending along a first direction; the first boundaries are sequentially connected by first edges extending along a first direction and second edges extending along a second direction which are alternately arranged to form a step shape, so that the distance between the first boundaries and the second boundaries is gradually reduced to a preset minimum distance;
starting from a minimum interval area in a target non-rectangular window, arranging a first rectangular window and a second rectangular window in a staggered manner along steps of a first boundary, sequentially arranging a second rectangular window and a first rectangular window along the second boundary, and respectively extending the first rectangular window and the second rectangular window along a first edge of the corresponding steps in a first direction and extending a first preset distance along the corresponding steps; the first rectangular window and the second rectangular window arranged on the corresponding step of the first boundary have the same size in the second direction as the second side of the corresponding step; one end of the first rectangular window pattern arranged along the second boundary extends to the minimum pitch region by a second preset distance, and is adjacently stacked with one end of the first rectangular window pattern arranged on the step of the minimum pitch region of the first boundary in the second direction to form a communication region;
and arranging a third non-rectangular window in the target non-rectangular window except the first rectangular window and the second rectangular window.
Optionally, the first boundary and the second boundary are between the fin and the spacer.
Optionally, the sum of the dimensions of the fin portion and the spacer along the second direction is 1 pitch, and the preset minimum pitch is 2 pitches.
Optionally, the first preset distance is 1/2CPP.
Optionally, the second preset distance is 1CPP.
Optionally, when the substrate surface further includes a rectangular removal window other than the target non-rectangular window and the first rectangular window pattern disposed along the second boundary has a dimension of 1 pitch along the first direction, the first patterned mask layer or the second patterned mask layer further includes the rectangular removal window.
Optionally, when the substrate surface further includes a rectangular removal window other than the target non-rectangular window and the first rectangular window pattern disposed along the second boundary has a dimension along the first direction of 2 pitches, the second patterned mask layer further includes the rectangular removal window.
Optionally, the sum of the dimensions of the fin portion and the spacer along the second direction is 1 pitch, and the dimensions of the first rectangular window pattern arranged along the second boundary and the first rectangular window pattern arranged on the step of the minimum pitch region of the first boundary along the first direction are both greater than 2 pitches.
Optionally, the first patterned mask layer, the second patterned mask layer and the third patterned mask layer are photoresist layers, respectively.
Optionally, the method for forming the first patterned mask layer includes:
forming a first mask layer on the substrate and the fin part;
and carrying out a first photoetching process on the first mask layer by adopting a first mask plate, and transferring the patterns outside the first rectangular window pattern to the first mask layer to form a first patterned mask layer.
Optionally, the method for forming the second patterned mask layer includes:
forming a second mask layer on the substrate and the fin part;
and carrying out a second photoetching process on the second mask layer by adopting a second mask plate, and transferring the patterns outside the second rectangular window patterns to the second mask layer to form a second patterned mask layer.
Optionally, the method for forming the third patterned mask layer includes:
forming a third mask layer on the substrate and the fin part;
and carrying out a third photoetching process on the third mask layer by adopting a third mask plate, and transferring the patterns except the third non-rectangular window pattern to the third mask layer to form a third patterned mask layer.
Alternatively, the target non-rectangular window can be divided into several rectangles.
Alternatively, the third non-rectangular window pattern can be partitioned into rectangles.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
by adopting the technical scheme of the mask plate in the embodiment of the invention, the first mask plate comprises a first rectangular window graph; the second mask plate comprises a second rectangular window graph; the third mask plate comprises a third non-rectangular window graph; the first rectangular window graph is used for defining a first rectangular window for cutting the fin part on the substrate along a first direction; the second rectangular window graph is used for defining a first rectangular window for cutting the fin part on the substrate along the first direction; the third rectangular window pattern is used for defining a third non-rectangular window for cutting the fin part on the substrate along the second direction; the first rectangular window, the second rectangular window and the third rectangular window are spliced to form a preset target non-rectangular window; the target non-rectangular window is used for defining a region of the surface of the substrate, from which the fin portion is to be etched; in the photoetching process of forming the preset non-rectangular pattern of the fin part, two right-angle edges of the L-shaped corner of the preset non-rectangular pattern are respectively realized by adopting a first rectangular window pattern in the first mask plate and a second rectangular window pattern in the second mask plate, so that the phenomenon that rounding (corner rounding) at the L-shaped corner in the photoetching process influences the actual size of the preset non-rectangular pattern of the fin part can be avoided, and the performance of a device formed subsequently can be improved.
Drawings
Figures 1 and 2 are schematic diagrams of a substrate and a fin formed on a surface thereof;
FIG. 3 is a schematic illustration of a target removal window and a predetermined non-rectangular pattern of its external fins in an embodiment of the invention;
FIGS. 4 to 6 are schematic diagrams of three reticles used in embodiments of the present invention;
FIG. 7 is a schematic diagram of the distribution of the projected patterns of window patterns on a substrate in three reticles employed in an embodiment of the present invention;
FIG. 8 is a schematic diagram of a distribution of rectangular windows including a target non-rectangular window and beyond in an embodiment of the invention;
fig. 9 to 11 are schematic structural views of intermediate steps corresponding to the triple patterning method in the embodiment of the present invention;
fig. 12 is a schematic diagram of a predetermined non-rectangular pattern of fins formed on the substrate by three patterning methods in an embodiment of the invention.
Detailed Description
As described in the background art, the quality of the patterns formed by the triple patterning method in the prior art needs to be improved.
Referring to fig. 1 and 2, after forming the fins 110 on the substrate 100, it is generally desirable to pattern the fins 110 on the substrate 100 shown in fig. 1 and 2 into a predetermined non-rectangular pattern.
Referring to fig. 3, a non-rectangular pattern of fin patterning includes a first rectangular pattern 21 and a second non-rectangular pattern 22 extending in a first direction (X-direction), i.e., portions of the substrate located in the first rectangular pattern 21 and the second non-rectangular pattern 22 remain for the fin. The portion between the first rectangular pattern 21 and the second non-rectangular pattern 22 is a region of the substrate from which the fin portion is removed by etching, and this region is referred to as a target removal region in this embodiment, and a pattern formed by a boundary of the target removal region is a target non-rectangular window 23.
Specifically, the target non-rectangular window 23 includes a first boundary 231 and a second boundary 232 extending along a first direction, and a third boundary 233 and a fourth boundary 234 extending along a second direction (Y direction). Wherein the first boundary 231 is formed in a step shape by alternately arranging first sides 2311 extending in the first direction and second sides 2312 extending in the second direction in order such that the pitch between the first boundary 231 and the second boundary 232 in the second direction is gradually reduced to a preset minimum pitch (Min AA Space) S. In the embodiment of the present invention, when the sum of the dimensions of the spacing regions between the Fin portion and the adjacent Fin portion along the second direction is 1 Pitch (Fin Pitch), the preset minimum Pitch S is 2 pitches.
As can be seen in fig. 3, the first boundary 233 of the target non-rectangular window 23 includes more than two L-shaped corners. Difficulties arise in patterning the fins 110 on the substrate 100 into a predetermined non-rectangular pattern, particularly dicing the fins such that the ends of the diced fins are uniformly aligned and do not include corner rounding, particularly around the L-shaped corners of the non-rectangular pattern. The reason is that, due to limitation of photoetching resolution, two right-angle sides of an L-shaped corner in a first boundary of a target non-rectangular window are simultaneously realized by adopting the same mask in a photoetching process, a phenomenon of rounding is generated at the L-shaped corner, and the cut fin part deviates from the actual size, so that the performance of a subsequently formed device is affected.
In order to solve the problems, a mask in the embodiment of the invention comprises a first mask, a second mask and a third mask; the first mask plate comprises a first rectangular window graph; the second mask plate comprises a second rectangular window graph; the third mask plate comprises a third non-rectangular window graph; the first rectangular window, the second rectangular window and the third rectangular window are spliced to form a preset target non-rectangular window; the target non-rectangular window is used for defining a region of the surface of the substrate, from which the fin portion is to be etched; the first rectangular window graph is used for defining a first rectangular window for cutting the fin part on the substrate along a first direction; the second rectangular window graph is used for defining a first rectangular window for cutting the fin part on the substrate along the first direction; the third rectangular window pattern is used for defining a third non-rectangular window for cutting the fin portion on the substrate along the second direction.
According to the invention, the first rectangular window graph of the first mask plate is adopted to define one right-angle edge of the L-shaped corner on the first boundary of the target non-rectangular window, the second rectangular window graph of the second mask plate is adopted to define the other right-angle edge of the same L-shaped corner on the first boundary of the target non-rectangular window, and the phenomenon that the two right-angle edges of the L-shaped corner on the first boundary of the target non-rectangular window are simultaneously defined by adopting the same mask plate in the photoetching process, so that the rounding phenomenon is generated at the L-shaped corner to influence the actual size of the preset non-rectangular pattern of the fin part can be avoided, so that the performance of a subsequent device can be improved.
Fig. 4 to 6 are schematic top view structures of a mask plate according to an embodiment of the invention. FIG. 7 is a schematic top view of a projection of a window pattern on a reticle onto a substrate in an embodiment of the invention.
The mask provided by the embodiment of the invention comprises a first mask, a second mask and a third mask, so that fin parts on a substrate are configured into a preset non-rectangular pattern. The first mask and the second mask are used for defining a first rectangular window and a second rectangular window for cutting the fin parts in the target non-rectangular window along a first direction, and the third mask is used for defining a third non-rectangular window for cutting the fin parts in the target non-rectangular window along a second direction perpendicular to the first direction.
It should be appreciated that reticles may be modified according to the general understanding of lithography and reticle fabrication, as is well known in the art. For example, a positive photoresist or a negative photoresist may be used for the mask layer in embodiments of the present invention. When a positive photoresist is used, the filled areas on the reticle are used to expose the corresponding pattern on the photoresist; when a negative photoresist is used, the non-filled areas on the reticle are used to expose a corresponding pattern on the photoresist.
The reticle may be formed in a variety of techniques. For example, a reticle may be formed using binary techniques (binary technology). The binary reticle includes a transparent substrate (e.g., fused silica) and an opaque material (e.g., chromium) coated in opaque regions of the reticle. In other embodiments, a phase shift technique may be used to form a reticle, with the various components in the pattern formed on the reticle configured to have appropriate phase differences to improve resolution and imaging quality. It is understood that the Phase Shift Mask (PSM) may also be an attenuated PSM or an alternating PSM.
Referring to fig. 4 to 7, the first reticle 510 includes a plurality of first rectangular window patterns 512, the second reticle 520 includes a plurality of second rectangular window patterns 522, and the third reticle 530 includes a plurality of third non-rectangular windows 532 extending in the second direction. The first 512 and second 522 and third 532 rectangular window patterns collectively define a predetermined non-rectangular pattern of fins (e.g., 23 of figure 3) that need to be formed on the substrate. The first, second and third rectangular window patterns 512, 522 and 532 projected onto the substrate are first, second and third rectangular windows 512', 522' and 532', respectively.
Wherein the first rectangular window pattern 512 on the first reticle 510 and the second rectangular window 522' of the second reticle 520 extending along the first direction collectively define a first boundary (231 in fig. 3) of a target non-rectangular window to be formed on the substrate extending along the first direction. Specifically, the first rectangular window 512 'and the second rectangular window 522' are spaced apart on the steps of the target non-rectangular window, the first rectangular window 512 'is spaced apart from the steps of the minimum pitch region of the target non-rectangular window 23, and the second rectangular window 522' is spaced apart from the steps of the next small pitch region of the minimum pitch region. And, the first rectangular window pattern 512 'and the second rectangular window 522' respectively extend from the second side of the corresponding step of the first boundary of the target non-rectangular window along the first side of the corresponding step and extend a first preset distance. In an embodiment of the invention, the first preset distance is 1/2 gate spacing (Contacted Poly Pitch, CPP).
It can be seen that, the first rectangular window pattern 512 and the second rectangular window pattern 522 together define an L-shaped corner of the first boundary of the target non-rectangular window extending along the first direction, that is, two right-angle sides at the same L-shaped corner of the first boundary of the target non-rectangular window are respectively formed in different photolithography processes by using two different masks, so that the same L-shaped corner of the first boundary can be prevented from being formed in the same photolithography process, and thus, the rounding phenomenon generated at the L-shaped corner due to the limitation of the photolithography resolution can be prevented, and further, the fact that the rounding phenomenon at the L-shaped corner affects the actual size of the predetermined non-rectangular pattern of the fin portion in the photolithography process can be prevented, so that the performance of the subsequent forming device can be improved.
In the embodiment of the present invention, the number of the first rectangular window patterns 512' and the second rectangular windows 522' extending along the first direction on the first mask 510 and the second rectangular windows 522' extending along the first direction on the second mask 520 are the same as the number of the first rectangular window patterns 512' and the second rectangular windows 522' in the target non-rectangular window. Wherein the number of first rectangular window patterns 512 'and second rectangular windows 522' arranged along the steps of the first boundary of the target non-rectangular window is determined according to the number of steps of the first boundary of the target non-rectangular window, taking illustrated 2 and 1, respectively, as examples. In other embodiments, the number of first rectangular windows 512 'and second rectangular windows 522' arranged on steps along the first boundary of the target non-rectangular window may be greater or lesser, without limitation.
The first rectangular window pattern 512 on the first reticle 510 and the second rectangular window pattern 522 of the second reticle 520 are also used to collectively define a second boundary (232 in fig. 3) extending along the first direction of a target non-rectangular window to be formed on the substrate. Specifically, a first rectangular window pattern 512 'and a second rectangular window 522' are also sequentially arranged along the second boundary of the target non-rectangular window, starting from the smallest pitch region of the target non-rectangular window. And, the first rectangular window pattern 512' arranged at the second boundary extends from the minimum pitch region of the target non-rectangular window along the second boundary in a direction away from the minimum pitch region, such that an end portion of the first rectangular window pattern 512' arranged at the second boundary extending into the minimum pitch region is stacked adjacently to the first rectangular window pattern 512' arranged on the step of the minimum pitch region of the first boundary in the second direction to form a communication region, that is, the first rectangular window pattern 512' arranged at the second boundary and the first rectangular window pattern 512' arranged on the step of the minimum pitch region of the first boundary constitute a zigzag window pattern. In the embodiment of the present invention, the first preset distance is 1/2 gate intervals (Contacted Poly Pitch, CPP), and the distance that the first rectangular window pattern 512' arranged on the step of the minimum pitch region of the first boundary extends out of the minimum pitch region is also 1/2CPP, that is, the size of the communication region of the Z-shaped window pattern in the first direction is 1CPP.
Meanwhile, the second rectangular window 522 'arranged at the second boundary covers an area other than the first rectangular window pattern 512' in the minimum pitch area of the target non-rectangular window, that is, the first rectangular window pattern 512 'arranged on the step of the minimum pitch area of the first boundary and the second rectangular window 522' arranged at the second boundary also define a fourth boundary (234 in fig. 3) of the target non-rectangular window extending in the second direction together.
A third non-rectangular window graphic is disposed within the target non-rectangular window in addition to the first rectangular window graphic 512 'and the second rectangular window 522'. Thus, the third non-rectangular window 532' is used to define a third boundary (233 in fig. 3) extending along the second direction of the target non-rectangular window that needs to be formed on the substrate.
In the embodiment of the present invention, in the Z-shaped window pattern, the size of the first rectangular window pattern 512 'arranged on the step of the minimum pitch region of the first boundary along the first direction is greater than 2 pitches, and the size of the first rectangular window pattern 512' arranged at the second boundary along the first direction is greater than 2 pitches. And, the projected size of the Z-shaped window pattern in the second direction is the same as the size of the minimum-spaced region in the second direction.
The Z-shaped window pattern is defined by the first mask 510, and the second rectangular window 522 'at the right upper corner and the second rectangular window 522' at the left lower corner of the Z-shaped window pattern are distributed on the second mask 520, and the distance between the second rectangular window pattern 522 at the right upper corner and the second rectangular window pattern 522 at the left lower corner of the Z-shaped window pattern is larger than the critical line end distance (critical lineend space), so that the photoetching requirement can be met. Also, the size of the second rectangular window 522' in the lower left corner of the Z-shaped window pattern in the second direction is 1 pitch, excessive rounding can be avoided and the risk of fin cutting residues can be reduced.
Referring to fig. 8, in one embodiment of the invention, there may be other rectangular removal windows 81 in addition to the target non-rectangular window. Importantly, the projected dimension of the Z-shaped window pattern in the second direction is the same as the minimum spacing S (as shown in fig. 3). In view of the total lithographic capability (the general litho capability), rectangular removal windows 81 can only be allocated for definition in the second reticle when the first rectangular window pattern 512' arranged at the second boundary has a size of 2 pitches in the second direction; when the size of the first rectangular window pattern 512' arranged at the second boundary in the second direction is 1 pitch, the rectangular removal window 81 may be defined in the first mask or may be defined by using the second mask, thereby increasing the degree of freedom of photolithography in the triple patterning process, effectively reducing defect points generated in the double patterning photolithography process of the rectangular window along the first direction, and improving the quality of the generated pattern.
Referring to fig. 9 to 12 and fig. 1 to 2, the triple patterning method in the embodiment of the present invention may specifically include the following steps:
referring to fig. 1 and 2, a substrate 100 is provided, the substrate 100 having discrete fins 110 formed thereon.
In implementations, the substrate provides a process platform for subsequent fin field effect transistor formation. In this embodiment, the substrate 100 is a silicon substrate. In a specific embodiment, the substrate 100 includes: a base semiconductor such as silicon or germanium; a compound semiconductor such as silicon carbide, gallium arsenide, gallium phosphide, indium arsenide and/or indium antimonide, or a combination thereof. The substrate 100 can also be a silicon-on-insulator (SOI) substrate, which can be fabricated using separation by implantation of oxygen (SIMOX), wafer bonding, or other methods. Of course, the substrate 100 may also include various doped regions and other suitable features.
The fin 110 is used to provide a channel for the formed fin field effect transistor. The fin 110 is made of the same material as the substrate 100. In this embodiment, the fin portion and the substrate 100 are made of silicon. In other embodiments, the material of the fin 110 may also be germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and the material of the fin may also be different from the material of the substrate.
In an implementation, the step of forming the substrate 100 and the fin 110 may include: providing an initial substrate; forming a fin mask layer on the initial substrate; and etching the initial substrate with partial thickness by using the fin mask layer as a mask in a dry etching manner to form the substrate 100 and the fin 110.
Next, a first photoresist layer is formed over the substrate 100 and the fin 110, and a first reticle 510 is used in a first photolithography process to form a non-rectangular photoresist pattern 51 over the substrate 100 and the fin 110. The non-rectangular photoresist pattern 51 is formed to correspond to the pattern 511 on the first reticle 510. Then, an etching process is performed, the fin portions in the first rectangular window 512' outside the non-rectangular photoresist pattern 51 are removed, and the non-rectangular photoresist pattern 51 is removed.
Specifically, the non-rectangular photoresist pattern 51 covers the substrate 100 and the area of the fin 110 except for the first rectangular window 512'. Wherein the first rectangular window 512 'extends in the first direction, and the first rectangular window 512' starts from a step of a minimum pitch (Min AA Space) region (see fig. 3) of the first boundary within the target non-rectangular window 23 and is arranged at intervals along the step of the corresponding first boundary. Each first rectangular window 512' located on the first boundary step within the target non-rectangular window 23 extends along the first side of the corresponding step from the second side of the corresponding step and extends a first predetermined distance, i.e., the size of each first rectangular window 512' located on the first boundary step within the target non-rectangular window 23 in the first direction is larger than the size of the first side of the corresponding step, and the size of each first rectangular window 512' located on the first boundary step within the target non-rectangular window 23 in the second direction is equal to the size of the second side of the corresponding step. When the sum of the dimensions of the fin and the spacer is 1 pitch, each first rectangular window 512' on the first boundary step extends a first predetermined distance of 1/2 pitch from the first side of the corresponding step.
Meanwhile, a first rectangular window 512' is also configured at the second boundary of the target non-rectangular window 23. Wherein the first rectangular window 512 'located at the second boundary of the target non-rectangular window 23 extends from the minimum pitch region of the target non-rectangular window 23 (see fig. 3) along the second boundary in a direction away from the minimum pitch region, such that the first rectangular window 512' located at the second boundary of the target non-rectangular window 23 extends to a position where the end of the minimum pitch region and the first rectangular window pattern 501 arranged on the step of the minimum pitch region are adjacently stacked in the second direction to form a communication region, such that the first rectangular window 512 'located at the second boundary of the target non-rectangular window 23 and the first rectangular window 512' located at the second boundary of the target non-rectangular window 23 constitute a shaped window pattern.
Next, a second photoresist layer is formed over the substrate 100 and the fins 110, and a second reticle 520 is used in a second photolithography process to form a non-rectangular photoresist pattern 52 over the device. The non-rectangular photoresist pattern 52 corresponds to the pattern 522 of the second reticle 520. Then, an etching process is performed, the fin portions outside the non-rectangular photoresist pattern 52 are removed, and the non-rectangular photoresist pattern 52 is removed.
Specifically, the non-rectangular photoresist pattern 52 covers the substrate 100 and the area of the fin 110 except for the second rectangular window 522'. The second rectangular windows 522 'extend along the first direction, and the second rectangular windows 522' are respectively arranged on steps from the first boundary in the target non-rectangular window 23 and staggered with the first rectangular window patterns 501 on the steps of the first boundary. Similar to the first rectangular window aperture 512', each second rectangular window 522' located on the first boundary step within the target non-rectangular window 23 extends along the first side of the corresponding step from the second side of the corresponding step and extends a first predetermined distance, i.e., the size of each second rectangular window 522' located on the first boundary step within the target non-rectangular window 23 in the first direction is greater than the size of the first side of the corresponding step; the size of each second rectangular window 522' located on the first boundary step within the target non-rectangular window 23 in the second direction is equal to the size of the second side of the corresponding step. In this way, the ends of the first rectangular windows 512 'and the second rectangular windows 522' staggered along the steps of the first boundary within the target non-rectangular window 23 are adjacently stacked in the second direction. Since the first rectangular window 512 'and the second rectangular window 522' are formed in different photolithography processes, a rounding phenomenon at the L-shaped corner at the first boundary step during the subsequent etching can be avoided.
Meanwhile, a second rectangular window 522' is also provided at the second boundary of the target non-rectangular window 23. The second rectangular window 522' disposed at the second boundary of the target non-rectangular window 23 is located in an area other than the first rectangular window pattern 501 within the minimum-spaced area.
Thereafter, a third photoresist layer is formed over the substrate 100 and the fins 110, and a second reticle 520 is used in a third photolithography process to form a non-rectangular photoresist pattern 53 over the device. The non-rectangular photoresist pattern 53 corresponds to the pattern 532 of the second reticle 530. Then, an etching process is performed, the fin portion 110 outside the non-rectangular photoresist pattern 53 is removed, and the non-rectangular photoresist pattern 53 is removed.
The triple patterning method of the embodiment of the invention can be performed by using the mask provided by the embodiment of the invention, and can also be performed by using other masks.
When the triple patterning method in the embodiment of the invention is adopted, when the preset non-rectangular pattern of the fin part is formed on the substrate, all fin parts in the target non-rectangular windows on the substrate and the fin part are completely etched and removed, and the rounding phenomenon can not be generated at the photoresist pattern with the L-shaped corner, so that the shape accuracy of the formed fin part pattern can be improved, and the device performance can be improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (18)
1. A mask plate for performing patterning processing on a substrate; the substrate comprises a plurality of fin parts extending along a first direction and a spacing region positioned between the fin parts; the mask plate is characterized by comprising: the first mask plate, the second mask plate and the third mask plate;
the first mask plate comprises a first rectangular window graph; the first rectangular window graph is used for defining a first rectangular window for cutting the fin part on the substrate along a first direction;
the second mask plate comprises a second rectangular window graph extending along the first direction; the second rectangular window graph is used for defining a second rectangular window for cutting the fin part on the substrate along the first direction; the third mask plate comprises a third non-rectangular window graph; the third non-rectangular window pattern is used for defining a third non-rectangular window for cutting the fin part on the substrate along the second direction; the second direction is perpendicular to the first direction;
the first rectangular window, the second rectangular window and the third non-rectangular window are spliced to form a preset target non-rectangular window; the target non-rectangular window is used for defining a region of the surface of the substrate, from which the fin portion is to be etched; the target non-rectangular window includes a first boundary and a second boundary extending along a first direction; the first boundaries are sequentially connected by first edges extending along a first direction and second edges extending along a second direction which are alternately arranged to form a step shape, so that the distance between the first boundaries and the second boundaries is gradually reduced to a preset minimum distance; starting from a minimum interval area in a target non-rectangular window, arranging a first rectangular window and a second rectangular window pattern in a staggered manner along steps of a first boundary, and arranging a second rectangular window and a first rectangular window in sequence along a second boundary; the first rectangular window and the second rectangular window which are arranged on the first boundary step extend along the first edge of the corresponding step in the first direction respectively and extend out of the first preset distance; the sizes of the first rectangular window and the second rectangular window which are arranged on the first boundary step in the second direction are respectively the same as the sizes of the second sides of the corresponding steps; one end of the first rectangular window arranged along the second boundary extends to the minimum spacing region by a second preset distance, and is adjacently stacked with one end of the first rectangular window arranged on the step of the minimum spacing region of the first boundary in the second direction to form a communication region; and arranging a third non-rectangular window in the target non-rectangular window except the first rectangular window and the second rectangular window.
2. The reticle of claim 1, wherein the sum of the dimensions of the fin and the spacer on the substrate along the second direction is 1 pitch, and the predetermined minimum pitch is 2 pitches.
3. The reticle of claim 1, wherein the first predetermined distance is 1/2 gate spacing.
4. The reticle of claim 1, wherein the second predetermined distance is 1 gate spacing.
5. The reticle of claim 1, wherein when the substrate surface further comprises rectangular removal windows other than the target non-rectangular window and a dimension of a first rectangular window pattern arranged along a second boundary along a first direction is 1 pitch, the first reticle or the second reticle further comprises a rectangular removal window pattern corresponding to the rectangular removal window.
6. The reticle of claim 1, wherein when the substrate surface further comprises rectangular removal windows other than the target non-rectangular window and the first rectangular window pattern disposed along the second boundary has a dimension along the first direction of 2 pitches, the second reticle further comprises a rectangular removal window pattern corresponding to the rectangular removal window.
7. A method of triple patterning using the reticle of any one of claims 1 to 6, comprising:
providing a substrate comprising a fin extending along a first direction;
forming a first patterning mask layer on the substrate and the fin portion, wherein the first patterning mask layer comprises a first rectangular window;
etching the fin parts in the first rectangular window by taking the patterned first patterning mask layer as a mask to form a first pattern of the fin parts;
forming a second patterning mask layer on the substrate and the fin part; the second patterned mask layer comprises a second rectangular window;
etching the fin parts in the second rectangular window by taking the patterned second patterning mask layer as a mask to form second patterns of the fin parts;
forming a third patterning mask layer on the substrate and the fin part; the third patterning mask layer comprises a third non-rectangular window for cutting the fin part on the substrate along the second direction; the second direction is perpendicular to the first direction;
etching the fin parts in the third non-rectangular window by taking the patterned third patterning mask layer as a mask, and forming a preset non-rectangular pattern of the fin parts on the substrate;
the first rectangular window, the second rectangular window and the third non-rectangular window are spliced to form a preset target non-rectangular window; the target non-rectangular window is used for defining a region of the surface of the substrate, from which the fin portion is to be etched; the target non-rectangular window includes a first boundary and a second boundary extending along a first direction; the first boundaries are sequentially connected by first edges extending along a first direction and second edges extending along a second direction which are alternately arranged to form a step shape, so that the distance between the first boundaries and the second boundaries is gradually reduced to a preset minimum distance; starting from a minimum spacing area in a target non-rectangular window, arranging a first rectangular window and a second rectangular window in a staggered manner along steps of a first boundary, and arranging a second rectangular window and a first rectangular window in sequence along a second boundary; the first rectangular window and the second rectangular window which are arranged on the first boundary step extend along the first edge of the corresponding step in the first direction respectively and extend out of the first preset distance; the first rectangular window and the second rectangular window arranged on the first boundary step have the same size in the second direction as the second side of the corresponding step; one end of the first rectangular window arranged along the second boundary extends to the minimum spacing region by a second preset distance, and is adjacently stacked with one end of the first rectangular window arranged on the step of the minimum spacing region of the first boundary in the second direction to form a communication region; and arranging a third non-rectangular window in the target non-rectangular window except the first rectangular window and the second rectangular window.
8. The method of triple patterning of claim 7, wherein a sum of dimensions of the fin and spacer along the second direction is 1 pitch, and the predetermined minimum pitch is 2 pitches.
9. The method of triple patterning of claim 7 wherein the first predetermined distance is 1/2 gate spacing.
10. The method of triple patterning of claim 7 wherein said second predetermined distance is 1 gate spacing.
11. The method of triple patterning of claim 7, wherein when the substrate surface further comprises rectangular removal windows other than the target non-rectangular window and the first rectangular window pattern disposed along the second boundary has a dimension along the first direction of 1 pitch, the first patterned mask layer or the second patterned mask layer further comprises the rectangular removal windows.
12. The method of triple patterning of claim 7, wherein the second patterned mask layer further comprises rectangular removal windows when the substrate surface further comprises rectangular removal windows other than the target non-rectangular window and the first rectangular window pattern disposed along the second boundary has a dimension along the first direction of 2 pitches.
13. The method of claim 7, wherein the first, second and third patterned mask layers are each photoresist layers.
14. The method of triple patterning of claim 7, wherein the method of forming a first patterned mask layer comprises:
forming a first mask layer on the substrate and the fin part;
and carrying out a first photoetching process on the first mask layer by adopting a first mask plate, and transferring the patterns outside the first rectangular window pattern to the first mask layer to form a first patterned mask layer.
15. The method of triple patterning of claim 7, wherein using a method of forming a second patterned mask layer comprises:
forming a second mask layer on the substrate and the fin part;
and carrying out a second photoetching process on the second mask layer by adopting a second mask plate, and transferring the patterns outside the second rectangular window pattern to the second mask layer to form a second patterned mask layer.
16. The method of triple patterning of claim 7, wherein the method of forming a third patterned mask layer comprises:
forming a third mask layer on the substrate and the fin part;
and carrying out a third photoetching process on the third mask layer by adopting a third mask plate, and transferring the patterns except the third non-rectangular window pattern to the third mask layer to form a third patterned mask layer.
17. The method of triple patterning of claim 7 wherein said target non-rectangular window can be partitioned into rectangles.
18. The method of triple patterning of claim 7 wherein said third non-rectangular window pattern can be partitioned into rectangles.
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| CN103247575A (en) * | 2012-02-07 | 2013-08-14 | 台湾积体电路制造股份有限公司 | Patterning process for fin-like field effect transistor (Finfet) device |
| US8656322B1 (en) * | 2013-01-18 | 2014-02-18 | International Business Machines Corporation | Fin design level mask decomposition for directed self assembly |
| CN104867816A (en) * | 2014-02-21 | 2015-08-26 | 格罗方德半导体公司 | Methods of patterning line-type features using a multiple patterning process |
| CN107785242A (en) * | 2016-08-31 | 2018-03-09 | 中芯国际集成电路制造(上海)有限公司 | Triple patterned methods |
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| KR101883327B1 (en) * | 2012-03-28 | 2018-07-30 | 삼성전자주식회사 | Method for forming fine patterns of semiconductor device |
| US9184101B2 (en) * | 2013-03-11 | 2015-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for removing semiconductor fins using alternating masks |
| CN109116674B (en) * | 2017-06-22 | 2022-01-21 | 华邦电子股份有限公司 | Photomask set and photoetching method thereof |
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| CN103247575A (en) * | 2012-02-07 | 2013-08-14 | 台湾积体电路制造股份有限公司 | Patterning process for fin-like field effect transistor (Finfet) device |
| US8656322B1 (en) * | 2013-01-18 | 2014-02-18 | International Business Machines Corporation | Fin design level mask decomposition for directed self assembly |
| CN104867816A (en) * | 2014-02-21 | 2015-08-26 | 格罗方德半导体公司 | Methods of patterning line-type features using a multiple patterning process |
| CN107785242A (en) * | 2016-08-31 | 2018-03-09 | 中芯国际集成电路制造(上海)有限公司 | Triple patterned methods |
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