CN101458457A - Method for obtaining focusing position of exposure apparatus and focusing detecting method - Google Patents
Method for obtaining focusing position of exposure apparatus and focusing detecting method Download PDFInfo
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- CN101458457A CN101458457A CNA2007100945631A CN200710094563A CN101458457A CN 101458457 A CN101458457 A CN 101458457A CN A2007100945631 A CNA2007100945631 A CN A2007100945631A CN 200710094563 A CN200710094563 A CN 200710094563A CN 101458457 A CN101458457 A CN 101458457A
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Abstract
The invention relates to a method for acquiring the focus position of an exposure device, which comprises: measuring a side wall angle of a photosensitive material layer pattern generated by exposure of the exposure device; and inputting the side wall angle into a coordinate functional relation of the side wall angle and the focus position of the exposure device to acquire a focus position coordinate corresponding to the side wall angle. The invention also provides a method for detecting the focus of the exposure device, a method for detecting the flatness of a semiconductor substrate surface, and a method for improving the consistency of the side wall angle of the photosensitive material layer pattern. The detection method can achieve on-line detection, thus saving time.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, obtain the method for focusing position of exposure apparatus and the focus detection methods (Focus MonitorMethod) of exposure sources in particularly a kind of photoetching process.
Background technology
In the SIC (semiconductor integrated circuit) manufacturing process, the territory pattern on the mask plate is transferred in the photoresist layer of Semiconductor substrate, formed the photoresist pattern by the exposure sources (ExposureEquipment) of photoetching process; Then, as mask layer, Semiconductor substrate is carried out follow-up etching or ion implantation technology with this photoresist pattern.
In photoetching process, the live width of photoresist pattern and side wall profile can be exposed the influence that equipment focuses on situation.And the live width of photoresist pattern and profile can directly influence follow-up etching or ion implantation technology, thereby the detection that exposure sources focuses on situation (is called focus detection, FocusMonitor) seems particularly important.
Exposure sources is when work, the light that exposure light source sends is projeced on the mask plate with semiconductor device one deck territory pattern after collimating, the light that passes this mask plate carries the information of territory pattern, after light passes described mask plate, through imaging system, be incident upon on the photoresist layer of Semiconductor substrate, make photoresist layer sensitization.
Existingly a kind ofly detect exposure sources to focus on the step of situation as follows:
At first, providing mask plate, have test pattern on this mask plate, for example is the lines (Isolated Line) that isolate.
Then, this mask plate is placed exposure sources, carry out exposure technology at different focal position (FocusPosition), with described mask plate layout design transfer in the photoresist layer of Semiconductor substrate, form a plurality of photoresist patterns, and measure the live width of the photoresist pattern of each focal position.
For example, at different focal position f
1, f
2, f
3... f
n, carry out photoetching process respectively, then, measure the live width X of the photoresist pattern of each focal position
1, X
2, X
3... X
n
Then, match focal position f
1, f
2, f
3... f
nLive width X with its corresponding photoresist pattern
1, X
2, X
3... X
nQuafric curve.Calculate the flex point of this quafric curve, the corresponding focal position of this corner position is the best focus position (Best Focus Position) of this exposure sources.
Calculate the difference of benchmark (Baseline) focal position in this best focus position and the exposure sources, and judge whether described difference exceeds the preset threshold scope, if exceed, it is unusual to think that then this exposure sources focusing situation occurs; If do not have, then think the exposure sources operate as normal.Come the focusing situation of exposure sources is detected with this.
When utilizing this method that exposure sources focusing situation is detected, need take exposure sources and run ETCD estimated time of commencing discharging, can only offline inspection, spended time is longer.
A kind of exposure sources focus detection method for testing is disclosed in the patent No. is the United States Patent (USP) of US6701512B2, in its method, utilize overlay mark (Overlay Mark) as check pattern, realize focusing on the detection of situation by the difference that influences of different focal positions to the overlay mark relative position.This method needs special check pattern (for example overlay mark), and is to need exposure sources to stop to run goods in detection, also can only offline inspection, and spended time is longer.
Thereby, need a kind of method that can online detection exposure sources focuses on situation.Particularly improve constantly in exposure sources resolution, (Depth of Focus) is more and more littler for the depth of focus of exposure sources, and under the more and more littler situation of the process window of exposure technology, online detection seems more important to exposure sources.
Summary of the invention
The invention provides a kind of method of focusing position of exposure apparatus and focus detection methods of exposure sources of obtaining, present invention can be implemented in line and detect, can save time.
A kind of method that obtains focusing position of exposure apparatus provided by the invention comprises:
Measurement is through the side wall angle angle of the photochromics layer pattern of described exposure sources exposure generation;
With the funtcional relationship of described side wall angle angle input side wall angle angle and focusing position of exposure apparatus coordinate, obtain the focal position coordinate of this side wall angle correspondence.
Optionally, the method for measurement side wall angle angle is an optics critical size mensuration.
Optionally, the step of measurement side wall angle angle is as follows:
Measure the live width of described photochromics layer pattern top and bottom;
Calculate the poor of described top live width and bottom live width;
Trigonometric function value according to the THICKNESS CALCULATION side wall angle of described difference and photosensitive material layer;
Calculate the side wall angle angle by inverse trigonometric function.
Optionally, described trigonometric function is a kind of in tan, cotangent function, sine function, the cosine function.
Optionally, with the live width of electronics scanning electron microscopy measurement described photochromics layer pattern top and bottom, perhaps,
Measure the live width of described photochromics layer pattern top and bottom with optics critical size mensuration.
Optionally, the step of the funtcional relationship of acquisition side wall angle angle and focusing position of exposure apparatus is as follows:
Mask plate with test pattern is provided;
Generate the photochromics layer pattern by described exposure sources at different focal positions;
Measure the side wall angle angle of the photochromics layer pattern of different focal position correspondences;
The funtcional relationship of the photosensitive material layer pattern sidewalls angle angle that match focal position coordinate figure is corresponding with it.
Optionally, described test pattern is line image or channel patterns.
Optionally, the photochromics layer pattern of different focal position correspondences is created on same semiconductor substrate surface zones of different or is created in the photosensitive material layer of different Semiconductor substrate.
Optionally, measure the side wall angle angle of described photochromics layer pattern with optics critical size mensuration.
Optionally, describedly fit to linear fit or quadratic fit.
Accordingly, the present invention also provides a kind of method of exposure sources focus detection, comprising:
Measurement is through the side wall angle angle of the photochromics layer pattern of described exposure sources exposure generation;
With described side wall angle angle input side wall angle angle and focusing position of exposure apparatus coordinate function relation, obtain the focal position coordinate of this side wall angle correspondence;
Calculate the difference of the benchmark focal position coordinate of described focal position coordinate and described exposure sources;
Judge that whether described difference is greater than threshold range;
If described difference greater than threshold range, then stops exposure sources work.
Optionally, the method for measurement side wall angle angle is an optics critical size mensuration.
Optionally, the step of the funtcional relationship of acquisition side wall angle angle and focusing position of exposure apparatus is as follows:
Mask plate with test pattern is provided;
Generate the photochromics layer pattern by described exposure sources at different focal positions;
Measure the side wall angle angle of the photochromics layer pattern of different focal position correspondences;
The funtcional relationship of the photosensitive material layer pattern sidewalls angle angle that match focal position coordinate figure is corresponding with it.
Optionally, describedly fit to linear fit or quadratic fit.
The present invention also provides a kind of detection method of semiconductor substrate surface flatness, and Semiconductor substrate to be detected is provided;
On described Semiconductor substrate, form photosensitive material layer;
Keeping under the fixing situation of focal position coordinate, forming the photochromics layer pattern by exposure sources in the zones of different of semiconductor substrate surface with mask plate with test pattern;
Measure the side wall angle angle of the photochromics layer pattern of semiconductor substrate surface zones of different;
Judge the flatness of described semiconductor substrate surface according to the relation of described side wall angle angle and flatness.
Optionally, the method for described measurement is an optics critical size mensuration.
The present invention also provides a kind of raising photosensitive material layer pattern sidewalls angle angle conforming method, comprising:
Semiconductor substrate is provided;
On described Semiconductor substrate, form photosensitive material layer;
Keeping the focal position coordinate is under the situation of fixed value, forms photochromics layer pattern by exposure sources in the zones of different of semiconductor substrate surface with the mask plate with test pattern;
Measure the side wall angle angle of the photochromics layer pattern of semiconductor substrate surface zones of different;
With the value input side wall angle angle of described side wall angle angle and the funtcional relationship of focusing position of exposure apparatus coordinate, obtain the corresponding focal position coordinate of photochromics layer pattern of described semiconductor substrate surface zones of different;
Calculate the difference of the corresponding focal position coordinate of photochromics layer pattern of described fixed value and described semiconductor substrate surface zones of different;
Described difference is compensated to described fixed value the focal position coordinate when acquisition exposes to described semiconductor substrate surface zones of different;
Utilize to obtain zones of different expose the time the focal position coordinate to the described Semiconductor substrate execution photoetching technology of doing over again.
Optionally, the method for described measurement is an optics critical size mensuration.
Compared with prior art, in the technique scheme has the following advantages:
By measuring the side wall angle angle of photosensitive material layer pattern,, obtain the focal position coordinate of photochromics layer pattern then according to the funtcional relationship of side wall angle angle and focal position coordinate.Can onlinely detect, in time obtain the focusing situation of exposure sources, whether detection exposure sources that can be real-time focuses on situation and locates normally, if having unusually, for example focal position departs from the preset threshold scope, can in time find and handle accordingly; In addition, described method is comparatively simple, and saves time, and does not influence exposure sources and runs ETCD estimated time of commencing discharging normally.
Description of drawings
Fig. 1 is the synoptic diagram with mask plate of territory pattern;
Fig. 2 is a kind of synoptic diagram of test pattern;
Fig. 3 is the front elevation of Semiconductor substrate;
Fig. 4 be Semiconductor substrate and on the diagrammatic cross-section of photoresist pattern;
Fig. 5 is the process flow diagram of the embodiment of exposure sources focus detection methods of the present invention;
Fig. 6 is the process flow diagram of embodiment of the detection method of semiconductor substrate surface flatness of the present invention;
Fig. 7 is the process flow diagram of the embodiment of the conforming method of raising photosensitive material layer pattern sidewalls angle angle of the present invention.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
In the photoetching process, exposure sources focuses on live width and the side wall profile that situation can influence the photochromics layer pattern of formation, thereby extremely important to the detection of exposure sources focusing situation.
In the photoetching process, by exposure sources with the territory pattern on the mask plate transfer to Semiconductor substrate photosensitive material layer (photoresist for example, Photoresist) in, form the photochromics layer pattern.Under the situation of other parameter constant of exposure sources, when photosensitive material layer is in the optimal accumulated position of exposure sources, can obtain the photochromics layer pattern of maximum line width, when the Semiconductor substrate with photosensitive material layer by best focus position to away from or near the imaging system of exposure sources, the capital descends the live width of photochromics layer pattern, utilize this principle to obtain the optimum exposure position of exposure sources in the described prior art just, thereby the focusing situation of exposure sources is made judgement.
The focusing situation of exposure sources also can influence the sidewall of photochromics layer pattern of formation and the angle (acute angle) of semiconductor substrate surface, and its corresponding focal position of this angle has linear relationship, can obtain and the corresponding focal position of this angle by measurement and described linear relationship, thereby can judge the focusing situation of exposure sources this angle.
In one of them embodiment of the present invention, a kind of method that obtains focusing position of exposure apparatus is provided, by measuring the side wall angle angle of the photochromics layer pattern that generates through this exposure sources, and in the funtcional relationship with this side wall angle angle input side wall angle angle and focusing position of exposure apparatus coordinate, can obtain this focal position coordinate corresponding with side wall angle.Wherein, described side wall angle is the angle (acute angle) of the Semiconductor substrate at photosensitive material layer pattern sidewalls and this photochromics layer pattern place; The absolute value of described focal position coordinate figure is the distance value that actual focal position departs from this exposure sources best focus position, if this departs from and is near the imaging len of exposure sources, then the focal position coordinate is described distance value, if this departs from and is away from the imaging len of exposure sources, add that before described distance value negative sign is the focal position coordinate.
Below in conjunction with accompanying drawing described embodiment is described in detail.
In the present embodiment, photosensitive material layer is a photoresist, and Semiconductor substrate can be product or test pieces, if Semiconductor substrate is a product, then the territory pattern on its corresponding mask plate is the pattern of certain one deck of this product, for example gate pattern; If Semiconductor substrate is a test pieces, then the territory pattern on its corresponding mask plate is a resolution chart, for example the test bargraphs.
Be described in detail below, at first, provide the photoresist pattern that generates by exposure sources to be detected.Among the embodiment therein, its concrete technology is as follows:
Please refer to Fig. 1, a mask plate 10 is provided, this mask plate 10 is quartzy material; This mask plate 10 can be binary mask plate or phase-shift type mask plate; Has territory pattern on the mask plate 10, for example, pattern 12 with a plurality of chips (Chip), the live width of a plurality of patterns 12 relevant positions is identical, this pattern can be the pattern that is used to form line (Line), perhaps being used to form the pattern of groove (Trench), also can be the pattern that is used to form hole (Hole).
Figure in this mask plate 10 also can be to be test pattern, for example can be a plurality of line images as shown in Figure 2.
On described mask plate 10, have and be used for being used to make this mask plate 10 to aim at Semiconductor substrate to mutatis mutandis mark (Alignment Mark) 11.
Please refer to Fig. 3, Semiconductor substrate 20 is provided, described Semiconductor substrate 20 can be the wafer (wafer) of 6 inches or 8 inches or 12 inches, also can be the wafer of other size; On described Semiconductor substrate 20, can have semiconductor structure or device or dielectric layer or metal level; Described Semiconductor substrate 20 also can be nude film (Bare Wafer).On described Semiconductor substrate 20, have alignment mark (Zero mark) 21, this alignment mark 21 corresponding on the mask plate 10 for mark 11.Also can be that (Phaseshift Mark, PSM) (figure does not show) then also need on described mask plate 10 and the corresponding mark of this PSM (figure does not show) the phase-shift type alignment mark on described Semiconductor substrate 20.
Described Semiconductor substrate 20 is placed automatic double surface gluer, at first described Semiconductor substrate 20 is cleaned and dewater, then at a certain temperature to described Semiconductor substrate 20 surface-coated adhesive hexamethyldisilazane (Hexa methy ldisilazane, HMDS), described HMDS is used to change the hydrophilic or hydrophobic state on described Semiconductor substrate 20 surfaces, with the photoresist that increases follow-up spin coating and the adhesiveness on described Semiconductor substrate 20 surfaces.
Then, described Semiconductor substrate 20 is cooled to room temperature, described process for cooling can carry out on the cold drawing (Cooling Plate) of spin-coating equipment.
Then, this Semiconductor substrate 20 is placed on the brace table (Wafer Chuck), this brace table surface has vacuum cup, adsorbs described Semiconductor substrate 20 by vacuum cup.
(Resist Reduction Consumption, nozzle RRC) (Nozzle) moves to the central top position of described Semiconductor substrate 20, to described semiconductor substrate surface ejection RRC with surfactant.
The rotation brace table drives described Semiconductor substrate 20 with slower speed rotation, so that RRC can outwards flow along Semiconductor substrate 20 surfaces; Then, stop to spray RRC, the photoresist nozzle is moved to the central top position of described Semiconductor substrate 20, the ejection photoresist, and the described Semiconductor substrate 20 of continuation rotation, photoresist surface along described surfactant R RC under action of centrifugal force is spread out, and be covered with the surface of whole Semiconductor substrate 20.By adjusting the speed of rotation of described Semiconductor substrate 20, form certain thickness and thickness evenness photoresist layer preferably on described Semiconductor substrate 20 surfaces; Wherein, RRC can reduce photoresist at the resistance that semiconductor substrate surface flows, and helps to reduce the consumption of photoresist.
Wherein, described photoresist can be eurymeric photoresist or negative photoresist; In the present embodiment, described photoresist is an eurymeric.
After finishing the spin coating photoresist layer, the Semiconductor substrate 20 with photoresist layer is carried out soft examining (Soft Bake) technology,, and increase the adhesiveness of photoresist layer on described Semiconductor substrate 20 surfaces by the soft solvent of removing in the photoresist layer of examining.
If the flatness on described Semiconductor substrate 20 surfaces is relatively poor, can form anti-reflecting layer on Semiconductor substrate 20 surfaces earlier.
After forming photoresist layer on the Semiconductor substrate 20, this Semiconductor substrate 20 is placed on the substrate supports platform of described exposure sources (Wafer Chuck); Simultaneously mask plate 10 is placed on the mask plate bracing frame (Reticle Stage) of this exposure sources.
By the alignment mark 21 on alignment mark on the mask plate 10 11 and the Semiconductor substrate 20 described mask plate 10 and Semiconductor substrate 20 are aimed at;
Open exposure light source, the light beam that exposure light source sends projects on the mask plate 10 after collimating, then see through described mask plate 10, make the light intensity of light beam be subjected to after the spatial modulation of mask plate layout imaging system by exposure sources, be incident upon on the photoresist layer of described Semiconductor substrate 20, make described photoresist layer sensitization.Territory pattern in the mask plate 10 is transferred in the described photoresist layer.
Wherein, described exposure sources can be scanning type exposure equipment (Scanner) or step printing equipment (Stepper).
In the step printing equipment, figure on the mask plate 10 is transferred to fully on a certain zone of photoresist layer of Semiconductor substrate 20 by single exposure, and, expose with the photoresist layer of realization to the zones of different of Semiconductor substrate 20 by move described Semiconductor substrate 20 by certain step-length.
In the scanning type exposure equipment, has diaphragm in the optical system, the size of diaphragm is less than the size of mask plate, need be at the mobile mask plate 10 of a certain direction (being called the Y direction), make by the inswept whole mask plate 10 of the light beam of diaphragm, and project on the photoresist of Semiconductor substrate 20, simultaneously, Semiconductor substrate 20 need move along the opposite direction with mask plate 10 moving directions with certain speed (being generally the magnification that mask plate 10 rate travels multiply by imaging system), could with the figure transfer of whole mask plate to the photoresist of Semiconductor substrate, be called the single pass exposure.After finishing single pass, move described Semiconductor substrate 20, and carry out scan exposure technology once more and expose with the photoresist layer of realization to the diverse location of Semiconductor substrate 20 by certain step-length.
After finishing single pass exposure or stepping exposure, on the photoresist of Semiconductor substrate 20, form the pattern (be called a Shot or Field) corresponding with whole mask plate figure; Then, the photoresist layer of other position of Semiconductor substrate 20 is repeated stepping exposure and scan exposure, all finish exposure, form a plurality of Shot up to the photoresist layer of the diverse location of whole Semiconductor substrate 20.
Form pattern in the photoresist layer of Semiconductor substrate after, described Semiconductor substrate is carried out postexposure bake, and (Post Exposure Bake, PEB) technology and developing process form the photoresist pattern.
No matter in scanning type exposure technology, still in step printing technology, the focusing situation of the imaging system of exposure sources all can have direct influence to the live width and the side wall angle of the photoresist pattern that forms on the Semiconductor substrate 20.
After forming the photoresist pattern on the described Semiconductor substrate 20, need to measure the side wall angle of described photoresist pattern.
Please refer to Fig. 4, Fig. 4 has photoresist pattern 23 for the diagrammatic cross-section of the Semiconductor substrate with photoresist pattern 20 shown in Figure 3 on Semiconductor substrate 20.Measure the side wall angle angle [alpha] of described photoresist pattern 23.
Among the embodiment therein, (Optical CriticalDimension OCD) measures described side wall angle angle [alpha] by optics critical size method.
In the OCD mensuration, regard a plurality of photoresist patterns 23 on the Semiconductor substrate as reflection grating, by a branch of polarized light is projected on the described grating, after the diverse location reflection of described grating surface, produce phase differential, produce between the reflected light of the diverse location of grating surface and interfere, form interference fringe, described interference fringe carries the line width information of photoresist pattern 23 tops to the bottom diverse location, thereby can obtain the line width information of described photoresist pattern 23 tops according to described interference fringe to the bottom diverse location, and can obtain the side wall profile of described photoresist pattern 23, and then can obtain described side wall angle angle [alpha].
In a further embodiment, can measure the live width a at described photoresist pattern 23 tops and the live width b of bottom respectively, then, calculate the difference b-a of described bottom live width b and top live width a, calculate the trigonometric function value of described side wall layer then according to the thickness h of described difference b-a and described photoresist pattern 23, obtain the side wall angle angle [alpha] by trigonometric function.
For example, calculate the tangent value of side wall angle angle [alpha]
Obtain by arctan function then
Described trigonometric function can be in tan, cotangent function, sine function, the cosine function a kind of.
Can use the live width of described photoresist pattern 23 top a of electronics scanning electron microscopy measurement and bottom b, perhaps measure the live width of described photoresist pattern 23 top a and bottom b with optics critical size mensuration.
After obtaining the side wall angle angle [alpha] of photoresist pattern 23,, obtain the focal position coordinate f of this side wall angle angle [alpha] correspondence with described side wall angle angle [alpha] input side wall angle angle and focusing position of exposure apparatus coordinate function relation.
The focal position coordinate f of described acquisition is the described exposure sources focal position coordinate when forming photoresist pattern 23, with the focal position coordinate of this position coordinates f and exposure sources benchmark more as can be known this focal position coordinate f whether within the threshold range of focal position coordinate.Wherein, described threshold range is by the scope decision of the live width permission of described photoresist pattern 23, the focal position coordinate is in threshold range the time, the live width of the photoresist pattern 23 of formation in allowed limits, and the scope that live width allows is by the electrical decision of the semiconductor devices that forms.The reference position coordinate is the coordinate of the best focus position of exposure sources.
In other embodiments, can obtain the side wall angle angle of a plurality of photoresist patterns 23 of zones of different on the Semiconductor substrate 20, and calculate the focal position coordinate respectively, calculate the mean value of a plurality of focal position coordinates then, to reduce measuring error and stochastic error.
Among the embodiment therein, the step that obtains side wall angle angle and focusing position of exposure apparatus relation curve is as follows:
Mask plate with territory pattern is provided, and described territory pattern can be a test pattern, and described test pattern can be line image or channel patterns.
Then, at different focal positions, the territory pattern of described mask plate is transferred in the photoresist layer, formed a plurality of photoresist patterns by described exposure sources.Described a plurality of photoresist pattern can be created on the zones of different of semi-conductive substrate or be created on the different Semiconductor substrate.
Then, measure the photoresist pattern sidewalls angle angle of each focal position correspondence, measuring method is the OCD method.
Then, the funtcional relationship of its corresponding photoresist pattern sidewalls of match focal position coordinate figure angle angle, described match can be to be linear fit or quadratic fit.
Can find that by match its corresponding photoresist pattern sidewalls of described focal position coordinate figure angle has linear relationship.
By measuring the side wall angle angle of photoresist pattern 23, then according to the funtcional relationship of side wall angle angle and focal position coordinate, obtain the focal position coordinate of photoresist pattern 23, this method can detect On-line Product, in time obtain the focusing situation of exposure sources, whether detection exposure sources that can be real-time focuses on situation and locates normally, if having unusual, for example focal position departs from (Defocus) preset threshold scope, can in time find and handle accordingly.
In addition, described method is comparatively simple, and saves time, and does not influence exposure sources and runs ETCD estimated time of commencing discharging normally.
Described method detects exposure sources by this method with test pieces also applicable to offline inspection.
The present invention also provides a kind of exposure sources focus detection methods.The process flow diagram of the embodiment of Fig. 5 exposure sources focus detection methods of the present invention.
As shown in Figure 5, step S100 measures the side wall angle angle through the photochromics layer pattern of described exposure sources exposure generation.
The method of measuring can be the OCD mensuration, and described photosensitive material layer can be a photoresist layer.
Step S110 with described side wall angle angle input side wall angle angle and focusing position of exposure apparatus coordinate function relation, obtains the focal position coordinate of this side wall angle correspondence.
Among the embodiment therein, the step that obtains side wall angle angle and focusing position of exposure apparatus funtcional relationship is as follows:
Mask plate with test pattern is provided;
Generate the photochromics layer pattern by described exposure sources at different focal positions;
Measure the side wall angle angle of described photochromics layer pattern;
The funtcional relationship of its corresponding photosensitive material layer pattern sidewalls of match focal position coordinate figure angle angle describedly fits to linear fit or quadratic fit.
Step S120 calculates the difference of the benchmark focal position coordinate of described focal position coordinate and described exposure sources.Described benchmark focal position is described exposure sources optimum exposure position.
Step S130 judges that whether described difference is greater than threshold range.Generally according to the live width decision of product, the live width of the figure that the exposure sources exposure generates in this threshold range should satisfy the desired scope of the live width of key stratum in the product to described threshold range, and the desired scope of this live width is by the electrical decision of this product.
Step S140 is if described difference greater than threshold range, then stops exposure sources work.
By measuring the side wall angle angle of the photoresist pattern that described exposure sources generates, and the funtcional relationship by side wall angle angle and focusing position of exposure apparatus coordinate, obtain the focal position coordinate of this photoresist pattern correspondence, and then calculate the difference of this position coordinates and exposure sources reference position coordinate, and judge whether described difference exceeds threshold range.If within threshold range, think that then the focusing situation of exposure sources is normal, otherwise it is unusual to think that then exposure sources focuses on situation, needs shutdown inspection.This method can online detection be known the focusing situation of exposure sources, in time and save time.
The present invention also provides a kind of detection method of semiconductor substrate surface flatness.Fig. 6 is the process flow diagram of embodiment of the detection method of semiconductor substrate surface flatness of the present invention.
Step S200 provides Semiconductor substrate to be detected.
Can have semiconductor structure or device on the described Semiconductor substrate, described Semiconductor substrate also can be a nude film.
Step S210 forms photosensitive material layer on described Semiconductor substrate.Described photosensitive material layer can be a photoresist layer.
Step S220 is keeping under the fixing situation of focal position coordinate, forms photochromics layer pattern by exposure sources in the zones of different of semiconductor substrate surface with the mask plate with test pattern.
Step S230, the side wall angle angle of the photochromics layer pattern of measurement semiconductor substrate surface zones of different.Wherein, the method for described measurement can be optics critical size mensuration.
Step S240 judges the flatness of described semiconductor substrate surface according to the relation of described side wall angle angle and flatness.
If Semiconductor substrate has smooth surface, at a certain fixing focal position coordinate time, territory pattern on same mask plate zones of different on Semiconductor substrate forms the photochromics layer pattern and should have identical side wall angle, if semiconductor substrate surface unevenness, then the side wall angle of the photochromics layer pattern of zones of different is no longer identical, as seen side wall angle and flatness have certain relation, and the measurement by the oppose side wall angle can obtain semiconductor substrate surface flatness information.The side wall angle of the photochromics layer pattern by obtaining the semiconductor surface zones of different, but described side wall angle is in the flatness of the distribution reaction semiconductor substrate surface of zones of different.
The present invention also provides a kind of raising photosensitive material layer pattern sidewalls angle angle conforming method.Fig. 7 is the process flow diagram of the embodiment of the conforming method in raising photosensitive material layer of the present invention pattern sidewalls angle.
As shown in Figure 7, step S300 provides Semiconductor substrate.
Step S310 forms photosensitive material layer on described Semiconductor substrate.Described photosensitive material layer can be a photoresist.
Step S320 is under the situation of fixed value keeping the focal position coordinate, forms photochromics layer pattern by exposure sources in the zones of different of semiconductor substrate surface with the mask plate with test pattern.
Step S330, the side wall angle angle of the photochromics layer pattern of measurement semiconductor substrate surface zones of different.Wherein, the method for described measurement can be optics critical size mensuration.
Step S340 with the value input side wall angle angle of described side wall angle angle and the funtcional relationship of focusing position of exposure apparatus coordinate, obtains the corresponding focal position coordinate of photochromics layer pattern of described semiconductor substrate surface zones of different.
Step S350 calculates the difference of the corresponding focal position coordinate of photochromics layer pattern of described fixed value and described semiconductor substrate surface zones of different.
Step S360 compensates described difference to described fixed value, the focal position coordinate when acquisition exposes to described semiconductor substrate surface diverse location.
For example, if the corresponding focal position coordinate figure of photochromics layer pattern that obtains then deducts described difference with described fixed value greater than described fixed value; If the corresponding focal position coordinate figure of photochromics layer pattern that obtains then adds the above difference with described fixed value less than described fixed value.
Step S370, utilize to obtain zones of different expose the time the focal position coordinate to the described Semiconductor substrate execution photoetching technology of doing over again.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (18)
1, a kind of method that obtains focusing position of exposure apparatus is characterized in that, comprising:
Measurement is through the side wall angle angle of the photochromics layer pattern of described exposure sources exposure generation;
With the funtcional relationship of described side wall angle angle input side wall angle angle and focusing position of exposure apparatus coordinate, obtain the focal position coordinate of this side wall angle correspondence.
2, the method for acquisition focusing position of exposure apparatus as claimed in claim 1 is characterized in that: the method for measuring the side wall angle angle is an optics critical size mensuration.
3, the method for acquisition focusing position of exposure apparatus as claimed in claim 1 is characterized in that, the step of measuring the side wall angle angle is as follows:
Measure the live width of described photochromics layer pattern top and bottom;
Calculate the poor of described top live width and bottom live width;
Trigonometric function value according to the THICKNESS CALCULATION side wall angle of described difference and photosensitive material layer;
Calculate the side wall angle angle by inverse trigonometric function.
4, the method for acquisition focusing position of exposure apparatus as claimed in claim 3 is characterized in that: described trigonometric function is a kind of in tan, cotangent function, sine function, the cosine function.
5, the method for acquisition focusing position of exposure apparatus as claimed in claim 3 is characterized in that: with the live width of electronics scanning electron microscopy measurement described photochromics layer pattern top and bottom, perhaps,
Measure the live width of described photochromics layer pattern top and bottom with optics critical size mensuration.
6, the method for acquisition focusing position of exposure apparatus as claimed in claim 1 is characterized in that, the step of the funtcional relationship of acquisition side wall angle angle and focusing position of exposure apparatus is as follows:
Mask plate with test pattern is provided;
Generate the photochromics layer pattern by described exposure sources at different focal positions;
Measure the side wall angle angle of the photochromics layer pattern of different focal position correspondences;
The funtcional relationship of the photosensitive material layer pattern sidewalls angle angle that match focal position coordinate figure is corresponding with it.
7, the method for acquisition focusing position of exposure apparatus as claimed in claim 6 is characterized in that: described test pattern is line image or channel patterns.
8, the method for acquisition focusing position of exposure apparatus as claimed in claim 6 is characterized in that: the photochromics layer pattern of different focal position correspondences is created on same semiconductor substrate surface zones of different or is created in the photosensitive material layer of different Semiconductor substrate.
9, the method for acquisition focusing position of exposure apparatus as claimed in claim 6 is characterized in that: the side wall angle angle of measuring described photochromics layer pattern with optics critical size mensuration.
10, the method for acquisition focusing position of exposure apparatus as claimed in claim 6 is characterized in that: describedly fit to linear fit or quadratic fit.
11, a kind of method of exposure sources focus detection is characterized in that, comprising:
Measurement is through the side wall angle angle of the photochromics layer pattern of described exposure sources exposure generation;
With described side wall angle angle input side wall angle angle and focusing position of exposure apparatus coordinate function relation, obtain the focal position coordinate of this side wall angle correspondence;
Calculate the difference of the benchmark focal position coordinate of described focal position coordinate and described exposure sources;
Judge that whether described difference is greater than threshold range;
If described difference greater than threshold range, then stops exposure sources work.
12, the method for exposure sources focus detection as claimed in claim 11 is characterized in that: the method for measuring the side wall angle angle is an optics critical size mensuration.
13, the method for exposure sources focus detection as claimed in claim 11 is characterized in that, the step of the funtcional relationship of acquisition side wall angle angle and focusing position of exposure apparatus is as follows:
Mask plate with test pattern is provided;
Generate the photochromics layer pattern by described exposure sources at different focal positions;
Measure the side wall angle angle of the photochromics layer pattern of different focal position correspondences;
The funtcional relationship of the photosensitive material layer pattern sidewalls angle angle that match focal position coordinate figure is corresponding with it.
14, the method for exposure sources focus detection as claimed in claim 13 is characterized in that: describedly fit to linear fit or quadratic fit.
15, a kind of detection method of semiconductor substrate surface flatness is characterized in that:
Semiconductor substrate to be detected is provided;
On described Semiconductor substrate, form photosensitive material layer;
Keeping under the fixing situation of focal position coordinate, forming the photochromics layer pattern by exposure sources in the zones of different of semiconductor substrate surface with mask plate with test pattern;
Measure the side wall angle angle of the photochromics layer pattern of semiconductor substrate surface zones of different;
Judge the flatness of described semiconductor substrate surface according to the relation of described side wall angle angle and flatness.
16, the detection method of semiconductor substrate surface flatness as claimed in claim 15 is characterized in that: the method for described measurement is an optics critical size mensuration.
17, the conforming method of a kind of raising photosensitive material layer pattern sidewalls angle angle is characterized in that, comprising:
Semiconductor substrate is provided;
On described Semiconductor substrate, form photosensitive material layer;
Keeping the focal position coordinate is under the situation of fixed value, forms photochromics layer pattern by exposure sources in the zones of different of semiconductor substrate surface with the mask plate with test pattern;
Measure the side wall angle angle of the photochromics layer pattern of semiconductor substrate surface zones of different;
With the value input side wall angle angle of described side wall angle angle and the funtcional relationship of focusing position of exposure apparatus coordinate, obtain the corresponding focal position coordinate of photochromics layer pattern of described semiconductor substrate surface zones of different;
Calculate the difference of the corresponding focal position coordinate of photochromics layer pattern of described fixed value and described semiconductor substrate surface zones of different;
Described difference is compensated to described fixed value the focal position coordinate when acquisition exposes to described semiconductor substrate surface zones of different;
Utilize to obtain zones of different expose the time the focal position coordinate to the described Semiconductor substrate execution photoetching technology of doing over again.
18, the conforming method in raising photosensitive material layer pattern sidewalls angle as claimed in claim 17, it is characterized in that: the method for described measurement is an optics critical size mensuration.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007100945631A CN101458457A (en) | 2007-12-13 | 2007-12-13 | Method for obtaining focusing position of exposure apparatus and focusing detecting method |
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| CNA2007100945631A CN101458457A (en) | 2007-12-13 | 2007-12-13 | Method for obtaining focusing position of exposure apparatus and focusing detecting method |
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| CNA2007100945631A Pending CN101458457A (en) | 2007-12-13 | 2007-12-13 | Method for obtaining focusing position of exposure apparatus and focusing detecting method |
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| CN105547655A (en) * | 2016-01-29 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | Method for detecting optimal focal length of product through optical measurement |
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| CN110660650A (en) * | 2018-06-29 | 2020-01-07 | 台湾积体电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN116952545A (en) * | 2023-09-20 | 2023-10-27 | 粤芯半导体技术股份有限公司 | Method and device for monitoring focus offset of photoetching machine, electronic equipment and storage medium |
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| CN106104387A (en) * | 2014-03-04 | 2016-11-09 | Asml荷兰有限公司 | Lithographic equipment and data processing equipment |
| CN106104387B (en) * | 2014-03-04 | 2018-08-24 | Asml荷兰有限公司 | Lithographic equipment and data processing equipment |
| US10078273B2 (en) | 2014-03-04 | 2018-09-18 | Asml Netherlands B.V. | Lithographic apparatus with data processing apparatus |
| CN105547655A (en) * | 2016-01-29 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | Method for detecting optimal focal length of product through optical measurement |
| CN107917665A (en) * | 2016-10-09 | 2018-04-17 | 睿励科学仪器（上海）有限公司 | Method and apparatus for determining facula position |
| CN107917665B (en) * | 2016-10-09 | 2020-02-11 | 睿励科学仪器（上海）有限公司 | Method and apparatus for determining the position of a light spot |
| CN110660650A (en) * | 2018-06-29 | 2020-01-07 | 台湾积体电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN110660650B (en) * | 2018-06-29 | 2022-09-13 | 台湾积体电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN109283798A (en) * | 2018-08-15 | 2019-01-29 | 上海华力集成电路制造有限公司 | The optimization method lacked at the top of photoresist |
| CN109283798B (en) * | 2018-08-15 | 2020-11-24 | 上海华力集成电路制造有限公司 | Optimization method for top deletion of photoresist |
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| CN116952545B (en) * | 2023-09-20 | 2023-12-22 | 粤芯半导体技术股份有限公司 | Method and device for monitoring focus offset of photoetching machine, electronic equipment and storage medium |
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