CN116952545A - Method and device for monitoring focus offset of photoetching machine, electronic equipment and storage medium - Google Patents
Method and device for monitoring focus offset of photoetching machine, electronic equipment and storage medium Download PDFInfo
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- 238000001259 photo etching Methods 0.000 title claims abstract description 146
- 238000000034 method Methods 0.000 title claims abstract description 98
- 238000012544 monitoring process Methods 0.000 title claims abstract description 36
- 238000003860 storage Methods 0.000 title claims abstract description 20
- 238000001459 lithography Methods 0.000 claims abstract description 149
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- 230000008569 process Effects 0.000 claims abstract description 52
- 230000003287 optical effect Effects 0.000 claims abstract description 27
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 238000012795 verification Methods 0.000 claims description 43
- 238000005070 sampling Methods 0.000 claims description 25
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- 238000001514 detection method Methods 0.000 abstract description 26
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- 239000011265 semifinished product Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the application discloses a method and a device for monitoring focus offset of a photoetching machine, electronic equipment and a storage medium. Collecting sample side wall angles of patterns of a plurality of photoetching sample wafers, wherein the patterns of the photoetching sample wafers are obtained by photoetching according to a first photoetching process technology under different sample photoetching focal lengths by a photoetching machine to be tested; fitting to obtain a focal length-angle relation according to the sample photoetching focal length and the sample side wall angle, wherein the focal length-angle relation is a primary function relation; and confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation. The same patterns are processed on the sample wafer by using the lithography machine to be detected through different focal lengths by using the same process, the angles of the side walls in the products which are convenient to directly detect are measured by using an optical critical dimension instrument, the focal length-angle relation of the lithography machine to be detected during detection is determined, the deviation direction and the deviation amount in the subsequent use process are represented, and an engineer can accurately adjust the lithography details and improve the operation quality of the lithography machine.
Description
Technical Field
The embodiment of the application relates to the technical field of lithography, in particular to a method and a device for monitoring focus offset of a lithography machine, electronic equipment and a storage medium.
Background
In integrated circuit manufacturing processes, lithographic processes are a critical part of semiconductor manufacturing processes; a lithographic apparatus is also a very complex machine as one of the core devices of a lithographic process. The lithography machine has energy, focus, alignment marks, etc. for engineers to control critical parameters during the lithography process, and therefore monitoring of these critical parameters is critical during the production process of the product.
The exposure process of the photoetching machine is that a light source is focused on a wafer table through a projection lens to realize exposure, and the focal length is a numerical value of focusing of the projection lens on the surface of the wafer; the standard focus may be shifted for various reasons during the long-term use of the lithography machine. In the photolithography machine of g line (λ=436 nm) or i line (λ=365 nm) in the seventh eighties of the 20 th century, the focus offset of tens of nanometers has little effect on the semiconductor manufacturing photolithography process; however, with respect to the currently used lithographic machines of either KRF (λ=248 nm) or ARF (λ=193 nm), the focus offset of either 10nm or 20nm has a great influence on the semiconductor manufacturing process. Therefore, as semiconductor process is finer and finer, monitoring the shift of the nanoscale focal length of the lithography machine is critical to the yield of the product manufacturing process.
The current method for monitoring the focal length of the photoetching machine mainly comprises two methods, wherein an optical interferometer in the photoetching machine is used for monitoring the inclination of a wafer table and the damage of a lens, and then the parameters of the wafer table and the lens are limited in an FDC (Fault detection and classification ) system for monitoring; another method is to measure the critical dimension of the product by a scanning electron microscope to indirectly reflect the offset of the focal length of the lithography machine. The scheme of the optical interferometer in the photoetching machine relates to a plurality of photoetching machine equipment parameters, and the size of focal length offset can not be intuitively seen; by monitoring the difference of bottom/top critical dimensions through the scheme of measuring the critical dimensions of the product, the focus offset is monitored, and the fed-back critical dimensions cannot intuitively reflect the directionality of the focus offset of the lithography machine. Overall, the existing focus offset detection scheme of the lithography machine cannot intuitively and accurately present the actual offset condition.
Disclosure of Invention
The application provides a method, a device, electronic equipment and a storage medium for monitoring focal length offset of a photoetching machine, which are used for solving the technical problem that the existing scheme for detecting focal length offset of the photoetching machine cannot intuitively and accurately present actual offset conditions.
In a first aspect, an embodiment of the present application provides a method for monitoring focus offset of a lithography machine, where the method includes:
collecting sample side wall angles of patterns of a plurality of photoetching sample wafers, wherein the patterns of the photoetching sample wafers are obtained by photoetching according to a first photoetching process technology under different sample photoetching focal lengths by a photoetching machine to be tested;
fitting according to the sample photoetching focal length and the sample side wall angle to obtain a focal length-angle relation, wherein the focal length-angle relation is a primary function relation;
and confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation.
The determining the focus offset state of the lithography machine to be tested based on the focus-angle relationship includes:
collecting the angle of a verification side wall of a pattern of at least one lithography verification wafer, wherein the pattern of the lithography verification wafer is obtained by carrying out lithography on the lithography machine to be tested according to a first lithography process under the corresponding verification lithography focal length;
comparing the verification photoetching focal length of each photoetching verification wafer with a corresponding theoretical photoetching focal length to obtain an angle difference value, wherein the theoretical photoetching focal length is confirmed according to the corresponding verification side wall angle and the focal length-angle relation;
and confirming the focus offset state of the lithography machine to be tested according to the angle difference value and a preset offset reference threshold value.
The photoetching sample wafer comprises a plurality of exposure areas, the pattern is composed of sub-patterns of each exposure area, each sub-pattern is composed of a plurality of graphic elements, and each graphic element is a combination of adjacent rectangular lines and rectangular blank areas.
The sample sidewall angle for collecting patterns of a plurality of photoetching sample wafers comprises:
for each photoetching sample wafer, detecting initial side wall angles of patterns of a plurality of exposure areas in a central range through an optical key size meter;
and taking the average value of the initial side wall angles of the plurality of exposure areas as a sample side wall angle of the corresponding photoetching sample wafer.
For each of the lithography sample wafers, detecting initial sidewall angles of patterns of a plurality of exposure areas in a central range by an optical critical dimension meter, including:
for each exposure area, detecting single-point side wall angles of a plurality of sampling points through the optical key size instrument;
and taking the average value of the single-point side wall angles of the plurality of sampling points as an initial side wall angle of the corresponding exposure area.
Wherein the sampling points in each exposure area are uniformly distributed.
Wherein the plurality of exposure areas of the central range are exposure areas distributed in 5×5.
In a second aspect, an embodiment of the present application further provides a focus offset monitoring device for a lithography machine, where the focus offset monitoring device for a lithography machine includes:
the sample data acquisition unit is used for acquiring sample side wall angles of patterns of a plurality of photoetching sample wafers, wherein the patterns of the photoetching sample wafers are formed in different sample lights by a photoetching machine to be tested
Photoetching according to a first photoetching process technology under the focal length;
the relation confirming unit is used for fitting to obtain a focus-angle relation according to the sample photoetching focus and the sample side wall angle, wherein the focus-angle relation is a one-time function relation;
and the state confirming unit is used for confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation.
Wherein the state confirmation unit includes:
the verification data acquisition module is used for acquiring the verification side wall angle of the pattern of at least one lithography verification wafer, wherein the pattern of the lithography verification wafer is obtained by carrying out lithography according to a first lithography process technology under the corresponding verification lithography focal length of the lithography machine to be tested;
the focal length comparison module is used for comparing the verification lithography focal length of each lithography verification wafer with the corresponding theoretical lithography focal length to obtain an angle difference value, and the theoretical lithography focal length is confirmed according to the corresponding verification side wall angle and the focal length-angle relation;
and the state confirmation module is used for confirming the focus offset state of the lithography machine to be tested according to the angle difference value and a preset offset reference threshold value.
The photoetching sample wafer comprises a plurality of exposure areas, the pattern is composed of sub-patterns of each exposure area, each sub-pattern is composed of a plurality of graphic elements, and each graphic element is a combination of adjacent rectangular lines and rectangular blank areas.
Wherein, the sample data acquisition unit includes:
the area angle detection module is used for detecting the initial side wall angles of patterns of a plurality of exposure areas in the central range of each photoetching sample wafer through an optical key size meter;
and the region angle statistics module is used for taking the average value of the initial side wall angles of the plurality of exposure regions as a sample side wall angle of the corresponding photoetching sample wafer.
Wherein, the regional angle detection module includes:
the single-point angle detection sub-module is used for detecting single-point side wall angles of a plurality of sampling points through the optical key size instrument for each exposure area;
and the single-point angle statistics sub-module is used for taking the average value of the single-point side wall angles of the plurality of sampling points as the initial side wall angle of the corresponding exposure area.
Wherein the sampling points in each exposure area are uniformly distributed.
Wherein the plurality of exposure areas of the central range are exposure areas distributed in 5×5.
In a third aspect, an embodiment of the present application further provides an electronic device, including:
one or more processors;
a memory for storing one or more computer programs;
the one or more computer programs, when executed by the one or more processors, cause the electronic device to implement the method of monitoring focus offset of a lithography machine as in any of the first aspects.
In a fourth aspect, embodiments of the present application also provide a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements a method for monitoring focus offset of a lithography machine according to any one of the first aspects.
The method comprises the steps of collecting sample side wall angles of patterns of a plurality of photoetching sample wafers, wherein the patterns of the photoetching sample wafers are obtained by photoetching a to-be-tested photoetching machine according to a first photoetching process under different sample photoetching focal lengths; fitting according to the sample photoetching focal length and the sample side wall angle to obtain a focal length-angle relation, wherein the focal length-angle relation is a primary function relation; and confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation. The same patterns are processed on a sample wafer through different focal lengths by using the lithography machine to be detected through the same process, the angles of the side walls in products which are convenient to directly detect are measured through the optical key size instrument, the focal length-angle relation of the lithography machine to be detected in detection is determined according to the measurement results corresponding to the different focal lengths and the corresponding focal lengths, the focal length offset state of the lithography machine to be detected can be confirmed at any time according to the focal length-angle relation, the offset direction and the offset amount can be accurately represented based on the focal length offset state of the focal length-angle relation, and an engineer can accurately adjust lithography details according to the focal length offset state, so that the operation quality of the lithography machine is improved.
Drawings
Fig. 1 is a flowchart of a method for monitoring focus offset of a lithography machine according to an embodiment of the present application.
Fig. 2 is a schematic diagram of a normal focus lithography state.
Fig. 3 is a schematic diagram of a photolithography state when the wafer table is tilted.
FIG. 4 is a schematic diagram of a photolithography state when a relative height of a lens is changed.
Fig. 5 is a schematic diagram showing the comparison of the side wall angle when the normal focal length and the focal length are deviated.
Fig. 6 is a schematic diagram of a photomask for generating a pattern according to an embodiment of the present application.
Fig. 7 is a schematic diagram of a fitting process of a focal length-angle relationship according to an embodiment of the present application.
Fig. 8 is a schematic structural diagram of a focus offset monitoring device of a lithography machine according to an embodiment of the present application.
Fig. 9 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
The application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are for purposes of illustration and not of limitation. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings.
It should be noted that the present disclosure is not limited to all the alternative embodiments, and those skilled in the art who review this disclosure will recognize that any combination of the features may be used to construct the alternative embodiments as long as the features are not mutually inconsistent.
The following describes various embodiments of the present application in detail.
The exposure process of the photoetching machine is that a light source is focused on a wafer table through a projection lens to realize exposure, the projection with no deviation of focal length in an ideal state is shown in fig. 2, the focal length of the projection lens is exactly positioned on a wafer on the wafer table, the focal length is a numerical value of the projection lens focused on the surface of the wafer, and the focal length in the state shown in fig. 2 is defined as F0. The long-term operation of the lithography machine may lead to the deviation of the wafer table or the projection lens, for example, the wafer table is inclined, so that the standard focal length is deviated, the lithography state is shown in fig. 3, the focal length in the state shown in fig. 3 is defined as F1, and f0+.f1 exists. The height of the lens relative to the wafer table changes due to mechanical reasons or changes in the thermal coefficient of the material itself, and the height of the lens relative to the wafer table changes, so that the photolithography state is shown in fig. 4, and the focal length in the state shown in fig. 4 is defined as F2, and f0+.f2 exists. In addition, it is also possible that, for example, the wafers vary in lot to lot, and the wafers themselves vary in thickness, resulting in a distance from the upper surface to the lens that is not the normal focal length when the wafers are placed on the wafer table. In the photolithography machine of g line (λ=436 nm) or i line (λ=365 nm) in the seventh eighties of the 20 th century, the focus offset of tens of nanometers has little effect on the semiconductor manufacturing photolithography process; however, with respect to the currently used lithographic machines of either KRF (λ=248 nm) or ARF (λ=193 nm), the focus offset of either 10nm or 20nm has a great influence on the semiconductor manufacturing process. Therefore, as semiconductor process is finer and finer, monitoring the shift of the nanoscale focal length of the lithography machine is critical to the yield of the product manufacturing process.
The current method for monitoring the focal length of the photoetching machine mainly comprises two methods, wherein an optical interferometer in the photoetching machine is used for monitoring the inclination of a wafer table and the damage of a lens, and then the parameters of the wafer table and the lens are limited in an FDC (Fault detection and classification ) system for monitoring; another method is to measure the critical dimension of the product by a scanning electron microscope to indirectly reflect the offset of the focal length of the lithography machine. The scheme of the optical interferometer in the photoetching machine relates to a plurality of photoetching machine equipment parameters, and the size of focal length offset can not be intuitively seen; by monitoring the difference of bottom/top critical dimensions through the scheme of measuring the critical dimensions of the product, the focus offset is monitored, and the fed-back critical dimensions cannot intuitively reflect the directionality of the focus offset of the lithography machine. Overall, the existing focus offset detection scheme of the lithography machine cannot intuitively and accurately present the actual offset condition.
According to the method for monitoring focal length offset of the lithography machine, the lithography machine to be tested is used for processing the same pattern on the sample wafer through different focal lengths by using the same process, the side wall angles in products which are convenient to directly detect are measured through the optical key size instrument, the focal length-angle relation of the lithography machine to be tested during detection is determined according to the measurement results corresponding to the different focal lengths and the corresponding focal lengths, the focal length offset state of the lithography machine to be tested can be confirmed at any time later according to the focal length-angle relation, the deviation direction and the deviation amount can be accurately represented according to the focal length offset state based on the focal length-angle relation, and an engineer can accurately adjust lithography details according to the focal length offset state, so that the operation quality of the lithography machine is improved. Various embodiments of the application are described in detail below.
Fig. 1 is a flowchart of a method for monitoring focus offset of a lithography machine according to an embodiment of the present application, where the method is applied to an electronic device serving for lithography process production, such as a management server of a lithography production line, a mobile panel for viewing a lithography production process, and the like. As shown in fig. 1, the focus offset monitoring method of the lithography machine includes steps S110 to S130:
step S110: and collecting sample side wall angles of patterns of a plurality of photoetching sample wafers, wherein the patterns of the photoetching sample wafers are obtained by photoetching according to a first photoetching process technology under different sample photoetching focal distances by a photoetching machine to be tested.
The lithography machine to be tested is a lithography machine needing to confirm the focus offset state, in the industry, the focus offset state cannot be directly judged according to the semi-finished product of the wafer processing manufactured by the lithography of the lithography machine to be tested, and the focus offset can be confirmed through the detection of the semi-finished product of the wafer processing at most, so that the offset degree cannot be quantified through the detection of the product, and the detection result cannot be intuitively presented. In the embodiment of the application, when the lithography machine to be tested needs to detect the focus offset, the lithography machine is used for carrying out lithography on a plurality of wafers to obtain the lithography sample wafer. The photoetching sample wafer specifically refers to a plurality of wafer processing semi-finished products obtained by photoetching according to a first photoetching process technology on an unprocessed wafer through a photoetching machine to be detected under different photoetching focal distances. The first photoetching process refers to a set of fixed photoetching process, and specifically comprises the steps of using wafers in the same batch, using the same photoetching raw materials, exposing for the same time and the like, so that a plurality of semi-finished products processed by the wafers have only difference of focal lengths in the photoetching manufacturing process as much as possible, and the influence of factor changes outside the focal length in the production process on the side wall angle of the pattern is reduced, thereby obtaining the side wall angle change which can be regarded as being only influenced by the focal lengths.
The surface of the wafer can be regarded as a flat surface originally, a photoetching sample wafer obtained by photoetching through a photoetching machine is a semi-finished product after a pattern is generated on the surface of the wafer, and the pattern is actually obtained by etching the surface of the wafer. In the photoetching process, the actual etching time of different etching depths is different, the patterns are not vertical and downward to finish the etching process, the patterns formed in an etching mode are wider in upper opening and narrower in bottom of the patterns, which are equivalent to the patterns formed in a concave mode, the inner side wall and the bottom of the patterns are not vertical, namely the included angle between the inner side wall and the bottom is not 90 degrees, in the embodiment of the application, the included angle is defined as a side wall angle, the side wall angle of the patterns of the photoetching sample wafer is defined as a sample side wall angle, and the side wall angles of semi-finished products of other wafers are respectively defined correspondingly and are directly used subsequently. This definition is only used to distinguish the half-cost of lithographically manufactured wafers for different link targets, the nature of the half-products being identical. The specific side wall angle relationship may refer to fig. 5, where the side wall angles α0 and α1 corresponding to different focal lengths are different.
When the scheme is specifically implemented, the photoetching sample wafer can comprise a plurality of exposure areas, the pattern can be composed of sub-patterns of each exposure area, the sub-patterns can be composed of a plurality of graphic elements, and the graphic elements are combinations of adjacent rectangular lines and rectangular blank areas, so that measurement errors can be reduced through a plurality of sampling targets when the angles of the sample side walls are acquired. The pattern described above is generated on a lithographic sample wafer, as determined by the reticle used in the lithographic process. The corresponding graphic element is the combined design of the rectangular lines and the rectangular blank areas, and the corresponding photomask is the photomask pattern shown in fig. 6, wherein the diagonal filling areas are used for etching the rectangular lines, and of course, fig. 6 is a schematic diagram of the pattern, and the non-filling areas can be used for etching the rectangular lines, so that the graphic element can be generated as a whole. The number of achievable exposure areas for a circular wafer is a conventional implementation in the art, and more than 10 primitives may be included for each exposure area sub-pattern, although a reduction to 8 or 7 primitives is an alternative implementation. The formation of a photomask and the photolithographic formation by a photolithographic machine using the photomask are fundamental implementations of photolithographic techniques, on the basis of which the desired pattern is confirmed, and will not be described here.
In a specific implementation process of collecting sample side wall angles of patterns of a plurality of photoetching sample wafers based on the patterns of a plurality of exposure areas, detecting initial side wall angles of the patterns of the plurality of exposure areas in a central range for each photoetching sample wafer through an optical key size meter; and taking the average value of the initial side wall angles of the plurality of exposure areas as a sample side wall angle of the corresponding photoetching sample wafer. The method is equivalent to that for a photoetching sample wafer manufactured based on one focal length photoetching, the angle of a pattern of a plurality of exposure areas is detected to obtain an initial side wall angle corresponding to each exposure area instead of detecting the side wall angle at a certain position, and the average value of the initial side wall angles of the pattern of the plurality of exposure areas is used as the sample side wall angle of the photoetching sample wafer. By the method, errors possibly existing in the sample side wall angle obtained by single-point detection of the pattern of one photoetching sample wafer can be reduced. In order to reduce errors, a plurality of photoetching sample wafers correspond to a plurality of sample photoetching focal lengths, for example, 11 wafers are used for respectively endowing sample photoetching focal lengths of-0.32/-0.35/-0.37/-0.38/-0.39/-0.40/-0.41/-0.42/-0.43/-0.45/-0.48 um values on a photoetching machine, and coating, photoetching, developing and other processes are carried out according to a set pattern to obtain wafer processing semi-finished products, namely 11 photoetching sample wafers are obtained.
The collection of the sample side wall angle can be based on indirect collection of initial side wall angles of a plurality of exposure areas, and the collection of the initial side wall angle of each exposure area can be based on clipping collection of single-point side wall angles of a plurality of sampling points, namely, in the process of detecting the initial side wall angles of patterns of a plurality of exposure areas in a central range by an optical key size meter for each photoetching sample wafer, detecting the single-point side wall angles of a plurality of sampling points by the optical key size meter for each exposure area; and taking the average value of the single-point side wall angles of the plurality of sampling points as an initial side wall angle of the corresponding exposure area. In the lithography sample wafer manufactured based on one focal length lithography, instead of detecting only a certain side wall angle for one exposure area, a plurality of sampling points are confirmed in a pattern of the exposure area, the side wall angle of each sampling point is detected to obtain a single-point side wall angle corresponding to each sampling point, and an average value of the single-point side wall angles of the plurality of sampling points is used as an initial side wall angle of the exposure area. By the method, errors possibly existing in the sample side wall angle obtained by single-point detection of the pattern of one photoetching sample wafer can be reduced. In a specific implementation process, the sampling points in each exposure area are uniformly distributed, wherein uniform distribution means that in the same exposure area, the distance between two adjacent sampling points is the same, and the distribution modes of the sampling points in different exposure areas can be the same or different, so that the accuracy of the final sample side wall angle is improved through enriching random sampling point layout modes, and errors are reduced as much as possible through sampling detection modes with large quantity and uniform distribution.
For a lithography sample wafer, the lithography is performed on a circular wafer, the exposure areas are generally distributed with the center of a circle or with a point close to the center of the circle, in order to ensure that the collected sample sidewall angles are all completely affected by the lens to obtain a detection result as accurate as possible, it is preferable to select a plurality of exposure areas in a central range, that is, a plurality of exposure areas closest to the center of the circle or the distribution center of the exposure areas, for example, the plurality of exposure areas in the central range are 5×5 distributed exposure areas, and each exposure area performs angle detection on 30 primitives. Angle detection, particularly using an optical critical dimension meter, is a common form of semiconductor quality detection and is not described in detail herein.
Step S120: and fitting according to the sample photoetching focal length and the sample side wall angle to obtain a focal length-angle relation, wherein the focal length-angle relation is a linear function relation.
Under the condition that the influence of factor changes outside the focal length on the angle of the pattern is eliminated as far as possible, the multiple sample photoetching focal lengths and the corresponding multiple sample side wall angles can be regarded as multiple numerical pairs of two variables with linear relation (namely one-time function relation), according to the numerical pairs, the focal length-angle relation can be obtained through fitting, the more the numerical pairs are, the more the fitted relation is close to the real relation, for example, 11 numerical pairs can be obtained by using the 11 sample photoetching focal lengths and the corresponding sample side wall angles, and the 11 numerical pairs can be fitted to obtain the more accurate focal length-angle relation. The 11 number pairs and the corresponding fitted focus-angle relationship are shown in fig. 7 in the same coordinate system, and the corresponding resultant focus-angle relationship may be expressed as y=0.7017x+87.299, where x represents the focus and y represents the angle (i.e., the sidewall angle shown by the vertical axis in fig. 7).
Step S130: and confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation.
The relation between the photoetching focal length and the side wall angle in the photoetching machine can be accurately described, and in the photoetching machine, the result of each photoetching cannot be completely matched with the relation between the focal length and the angle, so that the result of each photoetching is only required to be close to the relation between the focal length and the angle, and the difference is within a receivable range, namely, the focal length of the photoetching machine is considered not to be seriously deviated and the current production is not influenced, if the serious deviation occurs, an engineer is required to confirm a process adjustment strategy according to the output deviation state, or the relation between the focal length and the angle is re-detected and generated, and the normal production operation of the photoetching machine is ensured.
In an optional focus offset state confirmation process, collecting verification side wall angles of patterns of at least one lithography verification wafer, wherein the patterns of the lithography verification wafer are obtained by photoetching the lithography machine to be tested according to a first lithography process under the corresponding verification lithography focus; comparing the verification photoetching focal length of each photoetching verification wafer with a corresponding theoretical photoetching focal length to obtain an angle difference value, wherein the theoretical photoetching focal length is confirmed according to the corresponding verification side wall angle and the focal length-angle relation; and confirming the focus offset state of the lithography machine to be tested according to the angle difference value and a preset offset reference threshold value.
For example, the focal length-angle relationship confirmed in the offset detection process of a certain lithography machine is specifically shown in fig. 7, after the focal length-angle relationship is confirmed, 3 wafers can be used to respectively endow the verification lithography focal length with values of-0.36/-0.40/-0.44 um on the lithography machine, processes such as coating, lithography, developing and the like are performed according to a set pattern to obtain a semi-finished product of wafer processing, namely, 3 lithography verification wafers are obtained, the verification side wall angle of the lithography verification wafers is measured on an optical key size meter, and the measurement process is the same as the measurement process of the sample side wall angle. And substituting the angle of the verification side wall into the focal length-angle relation y=0.7017x+87.299 to perform reverse verification to obtain a theoretical photoetching focal length-0.35666/-0.39674/-0.43587 um, wherein the difference value between the theoretical photoetching focal length and the actual photoetching angle is only 3.3-4.5nm, and the matching degree of the theoretical photoetching focal length and the actual photoetching angle is higher, so that the accuracy of the detection result of the scheme is verified. In addition, if the aforementioned matching degree is also present after confirming the focus-angle relationship for a while, it can be considered that the focus of the lithography machine has not been shifted to affect the lithography generation after the previous confirmation of the focus-angle relationship, and the production can be continued.
On one hand, as the semiconductor process is more advanced, the photoetching machine is updated, and the current use of the newer photoetching machine greatly influences the process for the focus offset of tens of nanometers; on the other hand, the current use of FDC or scanning electron microscope to monitor the nano-scale focal length shift of the photoetching machine is complex and not intuitive; therefore, the application visually reflects the size and the direction of the nanoscale focal length offset of the photoetching machine by detecting the slight change of the angle of the side wall through the optical critical dimension, and is obviously applicable to monitoring of KRF (lambda=248 nm), ARF (lambda=193 nm) and updated nanoscale focal length offset of the photoetching machine; the theoretical value and the actual value of the focal length of the photoetching machine are only 3.3-4.5nm different, and the theoretical value and the actual value are basically matched, so that the requirement of monitoring by engineers is met; engineers can intuitively see the size and the direction of the nano-scale focal length offset of the photoetching machine, reduce the artificial workload and improve the operation quality of the photoetching machine.
According to the focus offset monitoring method of the lithography machine, sample side wall angles of patterns of a plurality of lithography sample wafers are collected, and the patterns of the lithography sample wafers are obtained by lithography according to a first lithography process technology under different sample lithography focus of the lithography machine to be tested; fitting according to the sample photoetching focal length and the sample side wall angle to obtain a focal length-angle relation, wherein the focal length-angle relation is a primary function relation; and confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation. The same patterns are processed on a sample wafer through different focal lengths by using the lithography machine to be detected through the same process, the angles of the side walls in products which are convenient to directly detect are measured through the optical key size instrument, the focal length-angle relation of the lithography machine to be detected in detection is determined according to the measurement results corresponding to the different focal lengths and the corresponding focal lengths, the focal length offset state of the lithography machine to be detected can be confirmed at any time according to the focal length-angle relation, the offset direction and the offset amount can be accurately represented based on the focal length offset state of the focal length-angle relation, and an engineer can accurately adjust lithography details according to the focal length offset state, so that the operation quality of the lithography machine is improved.
Fig. 8 is a schematic structural diagram of a focus offset monitoring device of a lithography machine according to an embodiment of the present application. As shown in fig. 8, the focus offset monitoring apparatus of the lithography machine includes a sample data acquisition unit 210, a relationship confirmation unit 220, and a state confirmation unit 230.
The sample data collection unit 210 is configured to collect sample sidewall angles of patterns of a plurality of lithography sample wafers, where the patterns of the lithography sample wafers are obtained by performing lithography by a lithography machine to be tested according to a first lithography process under different sample lithography focal lengths; a relationship confirmation unit 220, configured to obtain a focal length-angle relationship by fitting according to the sample lithography focal length and the sample sidewall angle, where the focal length-angle relationship is a linear function relationship; a state confirmation unit 230, configured to confirm a focus offset state of the lithography machine to be tested based on the focus-angle relationship.
On the basis of the above embodiment, the state confirmation unit 230 includes:
the verification data acquisition module is used for acquiring the verification side wall angle of the pattern of at least one lithography verification wafer, wherein the pattern of the lithography verification wafer is obtained by carrying out lithography according to a first lithography process technology under the corresponding verification lithography focal length of the lithography machine to be tested;
the focal length comparison module is used for comparing the verification lithography focal length of each lithography verification wafer with the corresponding theoretical lithography focal length to obtain an angle difference value, and the theoretical lithography focal length is confirmed according to the corresponding verification side wall angle and the focal length-angle relation;
and the state confirmation module is used for confirming the focus offset state of the lithography machine to be tested according to the angle difference value and a preset offset reference threshold value.
On the basis of the embodiment, the photoetching sample wafer comprises a plurality of exposure areas, the pattern is composed of a sub-pattern of each exposure area, the sub-pattern is composed of a plurality of graphic elements, and the graphic elements are combinations of adjacent rectangular lines and rectangular blank areas.
On the basis of the above embodiment, the sample data collecting unit 210 includes:
the area angle detection module is used for detecting the initial side wall angles of patterns of a plurality of exposure areas in the central range of each photoetching sample wafer through an optical key size meter;
and the region angle statistics module is used for taking the average value of the initial side wall angles of the plurality of exposure regions as a sample side wall angle of the corresponding photoetching sample wafer.
On the basis of the above embodiment, the area angle detection module includes:
the single-point angle detection sub-module is used for detecting single-point side wall angles of a plurality of sampling points through the optical key size instrument for each exposure area;
and the single-point angle statistics sub-module is used for taking the average value of the single-point side wall angles of the plurality of sampling points as the initial side wall angle of the corresponding exposure area.
On the basis of the above embodiment, the sampling points in each of the exposure areas are uniformly distributed.
On the basis of the above embodiment, the plurality of exposure areas of the center range are exposure areas of 5×5 distribution.
The focus offset monitoring device of the photoetching machine provided by the embodiment of the application is contained in the electronic equipment, can be used for executing the corresponding focus offset monitoring method of the photoetching machine provided by the embodiment, and has corresponding functions and beneficial effects.
It should be noted that, in the embodiment of the focus offset monitoring device of the lithography machine, each unit and module included are only divided according to the functional logic, but not limited to the above division, so long as the corresponding functions can be realized; in addition, the specific names of the functional units are also only for distinguishing from each other, and are not used to limit the protection scope of the present application.
Fig. 9 is a schematic structural diagram of an electronic device according to an embodiment of the present application. As shown in fig. 9, the electronic device comprises a processor 310 and a memory 320, and may further comprise an input means 330, an output means 340 and a communication means 350; the number of processors 310 in the electronic device may be one or more, one processor 310 being taken as an example in fig. 9; the processor 310, the memory 320, the input device 330, the output device 340, and the communication device 350 in the electronic device may be connected by a bus or other means, which is illustrated in fig. 9 as a bus connection.
The memory 320 is used as a computer readable storage medium for storing software programs, computer executable programs and modules, such as program instructions/modules corresponding to the focus offset monitoring method of the lithography machine in the embodiment of the present application. The processor 310 executes various functional applications and data processing of the electronic device by running software programs, instructions and modules stored in the memory 320, i.e. implements the above-described method for monitoring focus offset of a lithography machine.
Memory 320 may include primarily a program storage area and a data storage area, wherein the program storage area may store an operating system, at least one application program required for functionality; the storage data area may store data created according to the use of the electronic device, etc. In addition, memory 320 may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid-state storage device. In some examples, memory 320 may further include memory located remotely from processor 310, which may be connected to the electronic device via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The input device 330 may be used to receive input numeric or character information and to generate key signal inputs related to user settings and function control of the electronic device. The output device 340 may include a display device such as a display screen.
The electronic equipment comprises the focus offset monitoring device of the photoetching machine, can be used for executing any focus offset monitoring method of the photoetching machine, and has corresponding functions and beneficial effects.
The embodiment of the application also provides a computer readable storage medium, on which a computer program is stored, which when being executed by a processor, is used for executing the related operations in the focus offset monitoring method of the lithography machine provided in any embodiment of the application, and has corresponding functions and beneficial effects.
It will be appreciated by those skilled in the art that embodiments of the present application may be provided as a method, system, or computer program product.
Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein. The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks. These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks. These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In one typical configuration, a computing device includes one or more processors (CPUs, central Processing Unit), input/output interfaces, network interfaces, and memory. The Memory may include non-volatile Memory in a computer-readable medium, random access Memory (RAM, random Access Memory) and/or non-volatile Memory, etc., such as Read-Only Memory (ROM) or flash RAM (flash Random Access Memory). Memory is an example of a computer-readable medium.
Computer readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of storage media for a computer include, but are not limited to, phase change Memory (PRAM, phase Change Random Access Memory), static Random-Access Memory (SRAM), dynamic Random-Access Memory (DRAM), other types of Random-Access Memory (RAM), read-only Memory (ROM), electrically erasable programmable read-only Memory (EEPROM, dynamic Random Access Memory), flash Memory or other Memory technology, read-only optical disk read-only Memory (CD-ROM, compact disc read-only Memory), digital versatile disks (DVD, digital Video Disc) or other optical storage, magnetic cassettes, magnetic disk storage or other magnetic storage devices, or any other non-transmission medium, which can be used to store information that can be accessed by the computing device. Computer-readable media, as defined herein, does not include transitory computer-readable media (transmission media), such as modulated data signals and carrier waves.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises an element.
Note that the above is only a preferred embodiment of the present application and the technical principle applied. It will be understood by those skilled in the art that the present application is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the application. Therefore, while the application has been described in connection with the above embodiments, the application is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the application, which is set forth in the following claims.
Claims (10)
1. The focus offset monitoring method of the photoetching machine is characterized by comprising the following steps of:
collecting sample side wall angles of patterns of a plurality of photoetching sample wafers, wherein the patterns of the photoetching sample wafers are obtained by photoetching according to a first photoetching process technology under different sample photoetching focal lengths by a photoetching machine to be tested;
fitting according to the sample photoetching focal length and the sample side wall angle to obtain a focal length-angle relation, wherein the focal length-angle relation is a primary function relation;
and confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation.
2. The method according to claim 1, wherein the determining the focus offset state of the lithography machine to be tested based on the focus-angle relationship comprises:
collecting the angle of a verification side wall of a pattern of at least one lithography verification wafer, wherein the pattern of the lithography verification wafer is obtained by carrying out lithography on the lithography machine to be tested according to a first lithography process under the corresponding verification lithography focal length;
comparing the verification photoetching focal length of each photoetching verification wafer with a corresponding theoretical photoetching focal length to obtain an angle difference value, wherein the theoretical photoetching focal length is confirmed according to the corresponding verification side wall angle and the focal length-angle relation;
and confirming the focus offset state of the lithography machine to be tested according to the angle difference value and a preset offset reference threshold value.
3. The method according to claim 1, wherein the lithography sample wafer comprises a plurality of exposure areas, the pattern is composed of a sub-pattern of each exposure area, the sub-pattern is composed of a plurality of primitives, and the primitives are a combination of adjacent rectangular lines and rectangular blank areas.
4. A method of monitoring focus offset of a lithography machine as recited in claim 3, wherein the collecting the sample sidewall angles of the pattern of the plurality of lithography sample wafers comprises:
for each photoetching sample wafer, detecting initial side wall angles of patterns of a plurality of exposure areas in a central range through an optical key size meter;
and taking the average value of the initial side wall angles of the plurality of exposure areas as a sample side wall angle of the corresponding photoetching sample wafer.
5. The method according to claim 4, wherein detecting, for each of the lithography sample wafers, an initial sidewall angle of a pattern of a plurality of exposure areas of a center range by an optical critical dimension meter, comprises:
for each exposure area, detecting single-point side wall angles of a plurality of sampling points through the optical key size instrument;
and taking the average value of the single-point side wall angles of the plurality of sampling points as an initial side wall angle of the corresponding exposure area.
6. The method of claim 5, wherein the sampling points in each of the exposure areas are uniformly distributed.
7. The method of any one of claims 4-6, wherein the plurality of exposure areas of the central range are exposure areas of a 5 x 5 distribution.
8. A focus offset monitoring device for a lithography machine, comprising:
the sample data acquisition unit is used for acquiring sample side wall angles of patterns of a plurality of photoetching sample wafers, and the patterns of the photoetching sample wafers are obtained by photoetching according to a first photoetching process under different sample photoetching focal lengths by a photoetching machine to be tested;
the relation confirming unit is used for fitting to obtain a focus-angle relation according to the sample photoetching focus and the sample side wall angle, wherein the focus-angle relation is a one-time function relation;
and the state confirming unit is used for confirming the focus offset state of the lithography machine to be tested based on the focus-angle relation.
9. An electronic device, comprising:
one or more processors;
a memory for storing one or more computer programs;
the one or more computer programs, when executed by the one or more processors, cause the electronic device to implement the lithography machine focus offset monitoring method of any one of claims 1-7.
10. A computer readable storage medium having stored thereon a computer program which when executed by a processor implements a method of monitoring focus offset of a lithography machine as claimed in any one of claims 1 to 7.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458457A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for obtaining focusing position of exposure apparatus and focusing detecting method |
| CN101866111A (en) * | 2009-04-14 | 2010-10-20 | 中芯国际集成电路制造(北京)有限公司 | Method for monitoring exposure machine focal plane change |
| CN102272678A (en) * | 2008-12-30 | 2011-12-07 | Asml荷兰有限公司 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| EP3521929A1 (en) * | 2018-02-02 | 2019-08-07 | ASML Netherlands B.V. | Method of determining an optimal focus height for a metrology apparatus |
| CN115616873A (en) * | 2022-10-31 | 2023-01-17 | 长鑫存储技术有限公司 | Method, device and equipment for monitoring exposure focal length and offset and exposure method |
-
2023
- 2023-09-20 CN CN202311212200.9A patent/CN116952545B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458457A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for obtaining focusing position of exposure apparatus and focusing detecting method |
| CN102272678A (en) * | 2008-12-30 | 2011-12-07 | Asml荷兰有限公司 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| CN101866111A (en) * | 2009-04-14 | 2010-10-20 | 中芯国际集成电路制造(北京)有限公司 | Method for monitoring exposure machine focal plane change |
| EP3521929A1 (en) * | 2018-02-02 | 2019-08-07 | ASML Netherlands B.V. | Method of determining an optimal focus height for a metrology apparatus |
| CN115616873A (en) * | 2022-10-31 | 2023-01-17 | 长鑫存储技术有限公司 | Method, device and equipment for monitoring exposure focal length and offset and exposure method |
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