CN105137726A - Monitoring method for exposure focus of photoetching technology - Google Patents
Monitoring method for exposure focus of photoetching technology Download PDFInfo
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- CN105137726A CN105137726A CN201510680498.5A CN201510680498A CN105137726A CN 105137726 A CN105137726 A CN 105137726A CN 201510680498 A CN201510680498 A CN 201510680498A CN 105137726 A CN105137726 A CN 105137726A
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- focal length
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- photoetching process
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Abstract
The invention provides a monitoring method for the exposure focus of the photoetching technology. The monitoring method includes the steps that firstly, a mask with a benchmark alignment mark with the phase transfer characteristic is provided; secondly, the benchmark alignment mark is transferred to photoresist of a product wafer to form a photoresist pattern through the photoetching technology; thirdly, the focal length of an exposure machine is changed and transferred to the distance change in the direction orthorhombic to the focus direction of the exposure machine according to the phase transfer characteristic of the mask; fourthly, the distance change of the photoresist pattern in the direction orthorhombic to the focus direction of the exposure machine is measured; fifthly, the correspondence relation between the focus change determined according to the phase transfer characteristic of the mask and the distance change, the offset of the alignment precision of the photoresist pattern is determined according to the distance change measured in the fourth step, and therefore the offset condition of the focus in the exposure process of the exposure machine is determined.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to monitoring and the automatic adjusting method of exposure process parameters focal length in a kind of product.
Background technology
In SIC (semiconductor integrated circuit) manufacturing process, by the exposure machine of photoetching process, the layout patterns on mask is transferred in the photoresist layer of Semiconductor substrate, form photoetching offset plate figure, then, using this photoetching offset plate figure as restraining barrier, follow-up etching or ion implantation technology are carried out to Semiconductor substrate.Along with critical size is more and more less, also more and more higher to the requirement of photoetching process, the main detected parameters of current photoetching process has critical size and alignment precision, but the side wall profile of photoetching offset plate figure can be exposed the impact of equipment exposing condition, the change of focal length causes the profile variations of the photoetching offset plate figure of formation, no matter upwards (imaging system close to exposure sources) or (imaging system away from exposure sources) is at off-target focal length downwards, after exposure is introduced in capital, figure is fuzzy, the fuzzy meeting of the profile of photoetching offset plate figure directly has influence on subsequent etching or ion implantation technology, so carry out monitoring for the focal length in photoetching process to become very important.At present only for the off-line monitoring of exposure equipment focal distance, the following several shortcoming of the method: the 1. focal length variations can not monitoring board constantly; 2. off-line monitoring needs extra monitoring wafer; 3. off-line monitoring for certain specific etching condition, can only cannot meet the requirement of product; 4. the off-line monitoring cycle is long, and has no idea to compensate board in time.
The method of the off-line monitoring focal length of current use is: carry out exposing under different focal lengths by exposure sources and the photoetching offset plate figure formed, when pinpointed focus, live width sharpness that is maximum and figure is best, above-mentioned principle is utilized to monitor exposure equipment focal distance, its way is as follows: first, and exposure sources forms photoetching offset plate figure under different focal lengths; After this, the live width of above-mentioned photoetching offset plate figure is measured one by one; Maximum live width and best pattern definition is found out subsequently by comparing; Focal length during exposure according to maximum line width and optimum intersection figure sharpness.
The method step is complicated and loaded down with trivial details, and efficiency is lower, and is only suitable for off-line monitoring, can not reflect the change of Product Process mid-focal length really.
Summary of the invention
Technical matters to be solved by this invention is for there is above-mentioned defect in prior art, there is provided the focal distance monitoring method in a kind of product exposure process that can solve the problem that existing monitoring method step complexity is loaded down with trivial details, efficiency is lower, it can the focal length of monitoring photoetching technique in time.
In order to realize above-mentioned technical purpose, according to the present invention, providing a kind of monitoring method of photoetching process exposure focal length, comprising:
First step: the mask that the standard sleeve marking with phase transfer characteristic is provided;
Second step: by photoetching process, to form photoresistance figure on the photoresist described standard sleeve marking being transferred to product wafer;
Third step: by the phase transfer characteristic of mask, changes the distance that the focal length variations of exposure machine is transferred on the direction orthogonal with exposure machine focal length direction;
4th step: the distance measured on the direction orthogonal with exposure machine focal length direction of photoresistance figure changes;
5th step: the corresponding relation between the described focal length variations determined according to the phase transfer characteristic of mask and described distance change, the skew of the alignment precision of photoresistance figure is determined in the distance change utilizing the 4th step to measure, thus determines the drift condition of the focal length in exposure machine exposure process.
Preferably, shading region mask using many chromium lines formed as figure.
Preferably, chromium line and transition range positioned adjacent at least partially.
Preferably, the quantity of the standard sleeve marking of mask is four.
Preferably, four standard sleeve markings are distributed in four corners of mask.
Preferably, the quantity of the standard sleeve marking of mask is five.
Preferably, five standard sleeve markings are distributed in center and four corners of mask.
Preferably, the monitoring method of described photoetching process exposure focal length also comprises: further by feedback system, judges whether the side-play amount of focal length exceeds desired value.
Preferably, if the side-play amount of focal length exceeds desired value, then inform by feedback system the numerical value that exposure machine departs from, simultaneously exposure machine carries out Contrary compensation by the numerical value departed from, thus realizes exposure machine and be in all the time in best focal range.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 schematically shows the process flow diagram of the monitoring method of photoetching process exposure focal length according to the preferred embodiment of the invention.
The preferred exemplary of the mask that the monitoring method that Fig. 2 schematically shows photoetching process exposure focal length according to the preferred embodiment of the invention adopts.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
The invention provides the method for semiconductor product wafer exposure focal length monitoring.Fig. 1 schematically shows the process flow diagram of the monitoring method of photoetching process exposure focal length according to the preferred embodiment of the invention.
As shown in Figure 1, the monitoring method of photoetching process exposure focal length comprises according to the preferred embodiment of the invention:
First step S1: the mask that the standard sleeve marking with phase transfer characteristic is provided;
Second step S2: by photoetching process, to form photoresistance figure on the photoresist described standard sleeve marking being transferred to product wafer;
Third step S3: by the phase transfer characteristic of mask, the distance focal length variations of exposure machine (in vertical direction) being transferred to (horizontal direction) on the direction orthogonal with exposure machine focal length direction changes (XY changes);
4th step S4: the XY change measuring photoresistance figure, on namely orthogonal with exposure machine focal length direction direction, the distance of (horizontal direction) changes;
5th step S5: the corresponding relation between the described focal length variations determined according to the phase transfer characteristic of mask and described distance change, the skew of the alignment precision of photoresistance figure is determined in the distance change utilizing the 4th step S4 to measure, thus determines the drift condition of the focal length in exposure machine exposure process.
Thus, in fact, by determining that the drift condition of the focal length in exposure machine exposure process can monitor lithographic process mid-focal length parameter, if described focal length is not equal to desired value, the exposure position of off-target when illustrating that exposure machine exposes.Further, by data feedback system and automatic control system, the exposure focal length of next wafer is adjusted, ensure that exposure is in best exposure position all the time, ensure that the image on wafer is in best image position all the time, improve photoetching process and make window.
In a particular embodiment, for the mask of standard sleeve marking with phase transfer characteristic, wherein said indicia distribution is at the diverse location of mask, and the position of its best is four corners of mask.
More specifically, the standard sleeve marking of mask can realize, and vertical direction (focal length variations) is converted to the change of horizontal direction (XY change) distance, by measuring the change of horizontal direction, characterizes the change of focal length.If XY direction side-play amount is not equal to desired value, then described exposure technology off-target exposure position.
The preferred exemplary of the mask that the monitoring method that Fig. 2 schematically shows photoetching process exposure focal length according to the preferred embodiment of the invention adopts.
As shown in Figure 2, mask can be made up of housing and inside casing.Mask uses the shading region that many chromium lines 20 are formed as figure, and chromium line and transition range positioned adjacent (such as there is phase quadrature), such as the first transition range 11, second transition range 12, the 3rd transition range 13 and the 4th transition range 14 at least partially.And wherein two chromium lines are distributed in the first transition range 11 both sides, the side of the second transition range 12 and the 3rd transition range 13 is furnished with a chromium line respectively.
And the quantity of the standard sleeve marking of mask can be 1; But preferably the quantity of the standard sleeve marking of mask is multiple.Such as, preferably, the quantity of the standard sleeve marking of mask is four, and four standard sleeve markings are distributed in four corners of mask.Or preferably, preferably the quantity of the standard sleeve marking of mask is five; Above-mentioned five position distribution being marked at mask are four corners of mask and the center of mask.If more multiple labeling can be arranged, be then evenly distributed on the relevant position of mask.
For the formation of the standard sleeve marking of mask, can photoetching process be passed through, through wafer pre-service, coating photoresistance, soft baking, exposure, after the operation such as baking, development, wafer is formed alignment precision indicia patterns.
Optionally, method of the present invention can also comprise: further by feedback system, judge whether the side-play amount of focal length exceeds desired value, if the side-play amount of focal length exceeds desired value, then inform by feedback system the numerical value that exposure machine departs from, simultaneously exposure machine carries out Contrary compensation by the numerical value departed from, thus realizes exposure machine and be in all the time in best focal range, guarantees the sharpness exposing figure.Then with pinpointed focus, next wafer is exposed.
Optionally, according to the corresponding relation of described side-play amount and exposure equipment focal distance, obtain the real focal length of exposure sources, thus describe the actual state of device focus.
Compared with prior art, technique scheme of the present invention has following advantage:
1. phase shift indicia distribution is in four corners of product mask, so by after photoetching process, can measure product exposure focal length, can be implemented in line monitoring focal length.
2., because mark is integrated on the mask of product, monitor the change of focal length during product exposure so real.
3., for different masks and etching condition, focusing can monitor under different etching conditions.
4., by measuring the focal length of each exposing unit, by feedback system, the compensation of focal length can be carried out to next wafer.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the term " first " in instructions, " second ", " the 3rd " etc. describe only for distinguishing each assembly, element, step etc. in instructions, instead of for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (9)
1. a monitoring method for photoetching process exposure focal length, is characterized in that comprising:
First step: the mask that the standard sleeve marking with phase transfer characteristic is provided;
Second step: by photoetching process, to form photoresistance figure on the photoresist described standard sleeve marking being transferred to product wafer;
Third step: by the phase transfer characteristic of mask, changes the distance that the focal length variations of exposure machine is transferred on the direction orthogonal with exposure machine focal length direction;
4th step: the distance measured on the direction orthogonal with exposure machine focal length direction of photoresistance figure changes;
5th step: the corresponding relation between the described focal length variations determined according to the phase transfer characteristic of mask and described distance change, the skew of the alignment precision of photoresistance figure is determined in the distance change utilizing the 4th step to measure, thus determines the drift condition of the focal length in exposure machine exposure process.
2. the monitoring method of photoetching process exposure focal length according to claim 1, is characterized in that, mask uses the shading region that many chromium lines are formed as figure.
3. the monitoring method of photoetching process exposure focal length according to claim 1 and 2, is characterized in that, at least partially chromium line and transition range positioned adjacent.
4. the monitoring method of photoetching process exposure focal length according to claim 1 and 2, is characterized in that, the quantity of the standard sleeve marking of mask is four.
5. the monitoring method of photoetching process exposure focal length according to claim 1 and 2, is characterized in that, four standard sleeve markings are distributed in four corners of mask.
6. the monitoring method of photoetching process exposure focal length according to claim 1 and 2, is characterized in that, the quantity of the standard sleeve marking of mask is five.
7. the monitoring method of photoetching process exposure focal length according to claim 6, is characterized in that, five standard sleeve markings are distributed in center and four corners of mask.
8. the monitoring method of photoetching process exposure focal length according to claim 1 and 2, characterized by further comprising: further by feedback system, judges whether the side-play amount of focal length exceeds desired value.
9. the monitoring method of photoetching process exposure focal length according to claim 8, it is characterized in that, if the side-play amount of focal length exceeds desired value, then inform by feedback system the numerical value that exposure machine departs from, simultaneously exposure machine carries out Contrary compensation by the numerical value departed from, thus realizes exposure machine and be in all the time in best focal range.
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| CN201510680498.5A CN105137726A (en) | 2015-10-19 | 2015-10-19 | Monitoring method for exposure focus of photoetching technology |
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| CN201510680498.5A CN105137726A (en) | 2015-10-19 | 2015-10-19 | Monitoring method for exposure focus of photoetching technology |
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Cited By (3)
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| CN110647015A (en) * | 2019-09-25 | 2020-01-03 | 上海华力集成电路制造有限公司 | Method for detecting focus point of exposure machine |
| CN112612184A (en) * | 2020-12-14 | 2021-04-06 | 华虹半导体(无锡)有限公司 | Method for measuring critical dimension of graph |
| CN114355732A (en) * | 2021-12-20 | 2022-04-15 | 南京诚芯集成电路技术研究院有限公司 | Overlay error compensation precision measuring method |
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| CN110647015A (en) * | 2019-09-25 | 2020-01-03 | 上海华力集成电路制造有限公司 | Method for detecting focus point of exposure machine |
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| CN112612184A (en) * | 2020-12-14 | 2021-04-06 | 华虹半导体(无锡)有限公司 | Method for measuring critical dimension of graph |
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| CN114355732A (en) * | 2021-12-20 | 2022-04-15 | 南京诚芯集成电路技术研究院有限公司 | Overlay error compensation precision measuring method |
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Application publication date: 20151209 |