CN103995440B - The detection method of performance aimed at by litho machine - Google Patents

The detection method of performance aimed at by litho machine Download PDF

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CN103995440B
CN103995440B CN201410261079.3A CN201410261079A CN103995440B CN 103995440 B CN103995440 B CN 103995440B CN 201410261079 A CN201410261079 A CN 201410261079A CN 103995440 B CN103995440 B CN 103995440B
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repeatedly
mark
exposing unit
wafer
litho machine
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CN201410261079.3A
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CN103995440A (en
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甘志锋
智慧
毛智彪
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上海华力微电子有限公司
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Abstract

The invention discloses the detection method that performance aimed at by a kind of litho machine, comprise and wafer to be exposed is provided; Make mask plate, it has rectangle and changes to indicia patterns; By photoetching, by the rectangle of mask plate and repeatedly transfer on wafer to indicia patterns; By the method for translation incomplete exposing unit exposure layout, measure between complete exposing unit and incomplete exposing unit repeatedly to the center offset of mark, determine the Failure Boundaries of litho machine to incomplete exposing unit alignment compensation ability, with this border for benchmark, set up the most responsive detection exposure layout, thus set up the detection method that performance aimed at by more comprehensive and sensitive litho machine.

Description

The detection method of performance aimed at by litho machine

Technical field

The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of detection method of litho machine being aimed to performance.

Background technology

The fast development of semiconductor technology, improving constantly of integrated chip integrated level, cause the manufacture craft of chip increasingly sophisticated, and in order to ensure still there is good yield rate, will be more strict to the requirement of whole technological process and appliance arrangement, this just makes people strengthen the difficulty of technology controlling and process error.In the technique of this characteristic dimension of semiconductor manufacturing, very strict to the requirement of litho machine duty, when exposure semiconductor fine pattern, the alignment precision of the key size evenness and front and back layer that expose pattern has a strong impact on the yield of semiconductor devices production.

In current photoetching process, the aligning performance of litho machine can, because board fault or external temperature change, cause alignment parameter to offset, and these changes can finally cause every layer pattern well not aim at.These alignment parameters can be decomposed into several vector parameters: the displacement that wafer occurs at exposure process, the expansion that wafer occurs because of the change of the environment such as external temperature or contraction, wafer likely rotates or nonopiate rotation, and each exposing unit expands or shrinks, rotates or nonopiate rotation in wafer, the change of these alignment parameters above all can affect wafer alignment precision in a photolithographic process.

Existing litho machine is aimed at performance and is mainly contained two kinds of detection methods, a kind of is the two stacking detection methods to mark repeatedly to side-play amount, as shown in Figure 1, namely first produce machine of the testing standard wafer of litho machine, this wafer has been carved with meet that precision of manufacturing process requires repeatedly to mark as front stacking to mark.And then prepare a set ofly to test machine mask plate, this mask plate repeatedly also meets precision of manufacturing process to mark, and the size that its size and the machine standard of testing test machine wafer is different.Then, regularly machine standard wafer carries out testing machine reticle pattern patterning manufacturing process carry out testing machine testing, be included on standard wafer and carry out coating photoresist, exposure, development, and then the layer pattern that exposure makes new advances is as when stacking to mark, is then sent into by this wafer and repeatedly measures measuring instrument, measure two stacking changing to situation to mark, thus detect whether alignment parameter of photoetching machine vector shift occurs.If not skew, then illustrate that the property retention of litho machine alignment compensation is stablized; If there is skew, then detect the stacking side-play amount to mark of described standard wafer two, and compensate according to the change that side-play amount calculates parameter.Another kind method is the detection method of individual layer adjacent exposure unit repeatedly to mark repeatedly to side-play amount, as shown in Figure 2, the machine mask of testing includes different two kinds of the size that meets precision of manufacturing process repeatedly to mark, first repeatedly changes to mark to mark and second, machine of the testing wafer of unmatched layer pattern carries out coating photoresist, exposure, development, and then expose one deck photoetching agent pattern, the pattern exposed belongs to first of the adjacent or neighbouring exposing unit in left and right and is repeatedly repeatedly in repeatedly right layout to mark to mark and second, by measuring two kinds of changing to situation repeatedly to mark, thus detect whether alignment parameter of photoetching machine vector shift occurs.

Litho machine can be good the aligning performance of the complete exposing unit of compensation (Fullshot), but crystal round fringes region incomplete exposing unit (Partialshot) exceeds the correcting range of exposure bench, as shown in Figure 3, fall into completely within wafer scope is complete exposing unit T1FS, it within wafer scope is then incomplete exposing unit T1PS that part does not fall into, the alignment parameter of crystal round fringes region incomplete exposing unit T1PS can only be calculated by the complete exposing unit T1FS on its side, thus relative to complete exposing unit, the alignment compensation performance of litho machine to the incomplete exposing unit in crystal round fringes region can be poorer.In addition, the incomplete degree of the board compensation ability of aiming at the incomplete exposing unit in crystal round fringes region and incomplete exposing unit also has relation.Therefore, the exposure layout (shotmap) of incomplete exposing unit on wafer is arranged has impact to the sensitivity of board aligning detection method.

Because the exposure layout of product exposing unit on wafer can be different from the exposure layout that litho machine alignment compensation detects, insensitive monitoring may cause product alignment issues, and then causes the loss of product yield.Therefore, how providing a kind of more comprehensive, sensitive litho machine to aim at the detection method of performance, is one of those skilled in the art's technical matters urgently to be resolved hurrily.

Summary of the invention

In order to solve above-mentioned prior art Problems existing, the invention provides the detection method that performance aimed at by a kind of litho machine, by the method for translation incomplete exposing unit exposure layout, measure between complete exposing unit and incomplete exposing unit repeatedly to the center offset of mark, determine the Failure Boundaries of litho machine to incomplete exposing unit alignment compensation ability, with this border for benchmark, set up the most responsive detection exposure layout, thus set up the detection method that performance aimed at by more comprehensive and sensitive litho machine.

The detection method that performance aimed at by litho machine provided by the invention comprises the following steps:

Step S01, provides wafer to be exposed;

Step S02, makes mask plate, and this mask plate pattern has the rectangle that X-direction and Y-direction length are respectively 4Dx and 4Dy, have outside this rectangle four angles at least two groups along this rectangle cross central line or longitudinal centre line symmetry repeatedly to mark; Wherein, Dx is the length of the X-direction of exposing unit in wafer, and Dy is the length of exposing unit Y-direction in wafer;

Step S03, by gluing, exposure and developing process, by the rectangle of this mask plate and repeatedly transfer on wafer to indicia patterns, described wafer contains the exposing unit of the same size distributed with Y-direction array-like in X direction, this exposing unit comprises the complete exposing unit of wafer zone line and the incomplete exposing unit in crystal round fringes region, adhere to separately between the exposing unit of wafer first group of adjacent two exposing units repeatedly to mark and second group repeatedly mutually repeatedly right to mark;

Step S04, by repeatedly to measuring instrument, measures in wafer and changes to the center offset of mark between complete exposing unit and complete exposing unit, be defined as standard deviation amount;

Step S05, by repeatedly to measuring instrument, measure crystal round fringes region and often organize repeatedly to the center offset of mark between adjacent complete exposing unit and incomplete exposing unit, be defined as edge offset amount, this edge offset amount comprises X-direction and Y-direction;

Step S06, judges whether the most edge exposure unit of wafer X-direction or Y-direction is complete exposing unit, if not, all exposing units in X direction or Y-direction relative to wafer translation one predeterminable range, then repeat step S03 to S06; If so, then step S07 is entered;

Step S07, compares the often group edge offset amount and standard deviation amount that record, determines the Failure Boundaries of litho machine to incomplete exposing unit alignment compensation ability;

Step S08 take Failure Boundaries as benchmark, detects the aligning performance of litho machine.

Further, this rectangle four angles have four groups repeatedly to mark, often group repeatedly to mark comprise nonoverlapping first repeatedly to mark and second repeatedly to mark, these four groups repeatedly symmetrical along this rectangle central rotation to mark, and it is first of adjacent two exposing unit edges repeatedly repeatedly staggered repeatedly right to mark to mark and second to make.

Further, this first repeatedly to mark with second repeatedly to being labeled as the different square of size.

Further, this first repeatedly to mark and second repeatedly in the Cutting Road of mark between adjacent exposure unit.

Further, this center offset is that first group of adhering to separately between two adjacent exposure unit repeatedly changes to the center offset of mark to mark and second group, and between this standard deviation Liang Shi crystal circle center five complete exposing units, many groups are repeatedly to the center offset marked.

Further, relative to all exposing units of wafer translation in step S06, to change the exposure integrity degree of edge exposure unit.

Further, in step S06, all exposing units are 1/8Dx-1Dx or 1/8Dy-1Dy relative to the translation distance of wafer.

Further, in step S07 with the Failure Boundaries that the distalmost end exposing unit that edge offset amount is consistent with standard deviation amount is this wafer X positive dirction, X negative direction, Y positive dirction and Y negative direction.

Further, if the exposing unit at most edge is incomplete exposing unit, then the edge offset amount after translation and standard deviation amount is compared, as unanimously, then using the exposing unit at most edge as Failure Boundaries, as inconsistent, then using the inside exposing unit in most edge as Failure Boundaries.

Further, in step S08 to the aligning performance of litho machine detect comprise employing two stacking to mark repeatedly to detection method or the detection method of individual layer adjacent exposure unit repeatedly to mark repeatedly to side-play amount of side-play amount.

Further, step S03 selects I Lithography machine, KrF litho machine, ArF litho machine or EUV lithography machine.

The invention provides the detection method that performance aimed at by a kind of litho machine, by the method for translation incomplete exposing unit exposure layout, measure between complete exposing unit and incomplete exposing unit repeatedly to the center offset of mark, determine the Failure Boundaries of litho machine to incomplete exposing unit alignment compensation ability, with this border for benchmark, set up the most responsive detection exposure layout, thus set up the detection method that performance aimed at by more comprehensive and sensitive litho machine.

Accompanying drawing explanation

For can clearer understanding objects, features and advantages of the present invention, below with reference to accompanying drawing, preferred embodiment of the present invention be described in detail, wherein:

The existing two stacking detection methods to mark repeatedly to side-play amount of Fig. 1;

The detection method of Fig. 2 existing individual layer adjacent exposure unit repeatedly to mark repeatedly to side-play amount;

Fig. 3 is the distribution schematic diagram of the incomplete exposing unit in crystal round fringes region and complete exposing unit in prior art;

Fig. 4 is the flow chart of steps that method for testing performance aimed at by litho machine of the present invention;

Fig. 5 is the structural representation of mask plate in the inventive method;

Fig. 6 be in the inventive method first repeatedly to mark and second repeatedly to the structural representation of mark;

Fig. 7 is that in the inventive method, adjacent exposure unit changes to the structural representation of the mutual superposition of mark;

Fig. 8 is the optimization method schematic diagram of one embodiment of the invention.

Embodiment

Refer to Fig. 4, the detection method of the litho machine aligning performance of the present embodiment comprises the following steps:

Step S01, provides wafer to be exposed, is placed on wafer machine platform.

Step S02, makes mask plate, and this mask plate pattern has the rectangle that X-direction and Y-direction length are respectively Dx and Dy, have outside this rectangle four angles at least two groups along this rectangle cross central line or longitudinal centre line symmetry repeatedly to mark.Wherein, refer to two groups repeatedly to the positional symmetry of mark along this rectangle cross central line or longitudinal centre line symmetry, but not often group changes to the symmetry repeatedly to tagging in mark.

In the present embodiment, for the ease of follow-up measurement, also in order to improve the accuracy of measurement, repeatedly four groups being provided with to mark, being located at respectively on rectangular four angles of mask plate.As shown in Figure 5, in mask plate T1 rectangle pattern four angles on be respectively equipped with one group repeatedly to mark, often group repeatedly comprises nonoverlapping first repeatedly to marking T11 and second repeatedly to mark T12 to mark, four groups repeatedly symmetrical along rectangle central rotation to mark, make first group of adjacent two exposing unit edges repeatedly to mark and second group repeatedly staggered repeatedly right to mark, namely as shown in Figure 7, on the right side of left exposing unit upper second repeatedly changes to mark to mark and lower first, respectively with right exposing unit on the left of upper first repeatedly to mark and lower second repeatedly mutual repeatedly right to marking, changing of upper and lower exposing unit is repeatedly consistent with Fig. 7 to principle to mark, repeat no more.

Wherein, first can be repeatedly repeatedly arbitraryly be convenient to repeatedly to the geometric configuration that measuring instrument is measured to the shape of mark to mark and second, and the present embodiment adopts and that formed square pattern mutually vertical by four line segments, as shown in Figure 6.

Step S03, by gluing, exposure and developing process, by the rectangle of this mask plate and repeatedly transfer on wafer to indicia patterns, make wafer is formed in X direction with the multiple same size exposing unit of Y-direction array distribution, this exposing unit comprises the complete exposing unit of wafer zone line and the incomplete exposing unit in crystal round fringes region, and changing of adjacent exposure unit is mutually repeatedly right to mark.In the present embodiment, first group repeatedly changes in the Cutting Road marked all between adjacent exposure unit, not affect the circuit chip die in exposing unit to mark and second group.

Wherein, the litho machine of the present embodiment can select I Lithography machine, KrF litho machine, ArF litho machine or EUV lithography machine.

Step S04, by repeatedly to measuring instrument, measures in wafer and changes to the center offset of mark between complete exposing unit and complete exposing unit, be defined as standard deviation amount; Can Fig. 3 and Fig. 8 be consulted, what this step was measured is between the complete exposing unit T1FS of crystal circle center five some groups repeatedly to the center offset of mark.

Step S05, by repeatedly to measuring instrument, measure crystal round fringes region and often organize changing to the center offset of mark between adjacent complete exposing unit and incomplete exposing unit, be defined as edge offset amount, this edge offset amount comprises X-direction and Y-direction.Can Fig. 3 and Fig. 8 be consulted, what this step was measured is between outmost turns complete exposing unit T1FS and the incomplete exposing unit T1PS be adjacent some groups repeatedly to the center offset of mark, comprise X positive dirction, X negative direction, Y positive dirction and Y negative direction four.

Step S06, judge that whether wafer X-direction or the most edge exposure unit of Y-direction be complete exposing unit four exposing units of the most two ends of X-direction and the most two ends of Y-direction (namely in Fig. 6), if not, all exposing units in X direction or the distance preset relative to wafer translation one of Y-direction, wherein, this translation distance can, depending on the physical size size of exposing unit, be preferably 1/8Dx or 1/8Dy, then repeats step S03 to S06; If so, then step S07 is entered.

Wherein, determine whether that complete exposing unit can as shown in Figure 1, namely what fall into wafer scope completely is complete exposing unit.

Step S07, compares the often group edge offset amount and standard deviation amount that record, determines the Failure Boundaries of litho machine to incomplete exposing unit alignment compensation ability.

Wherein, this step is the Failure Boundaries in this direction with the distalmost end exposing unit that edge offset amount is consistent with standard deviation amount.That is, on X positive dirction, X negative direction, Y positive dirction and Y negative direction four direction, if the exposing unit at most edge is complete exposing unit, then direct using them as Failure Boundaries; If the exposing unit at most edge is incomplete exposing unit, then compare the edge offset amount after translation and standard deviation amount, as unanimously, then using the exposing unit at most edge as Failure Boundaries, as inconsistent, then using the inside exposing unit in most edge as Failure Boundaries.

Step S08, with this border for benchmark, sets up the most responsive detection exposure layout, adopts two stacking aligning performances mark repeatedly repeatedly repeatedly being detected to litho machine to the detection method of side-play amount or individual layer adjacent exposure unit to mark to the detection method of side-play amount.

In this step, the aligning performance detecting litho machine can according to existing techniques in realizing, to the aligning performance of photoresist detect comprise adopt existing two stacking to mark repeatedly to detection method or the detection method of individual layer adjacent exposure unit repeatedly to mark repeatedly to side-play amount of side-play amount.Wherein, expose layout and adopt the most responsive detection exposure layout optimized.

Please then consult Fig. 8, in one embodiment, after the technique of step S03, obtain that there are some some exposing units repeatedly to mark group, as shown in the left diagram, the exposing unit at the most edge of X positive dirction is incomplete exposing unit, by the measurement of step S04 and S05, find that X positive dirction edge offset amount is identical with standard deviation amount, i.e. photoetching function carries out full remuneration to exposing unit incomplete on the right side of X-axis in Fig. 8; Exposing unit is along wafer X negative direction translation 1/2Dx, as shown in middle figure, find that X positive dirction edge offset amount is different with standard deviation amount, illustrate that litho machine can not carry out full remuneration to exposing unit incomplete on the right side of X-axis, cause the circuit chip die in this incomplete exposing unit to be affected.So just can determine the Failure Boundaries that litho machine is aimed at the incomplete exposing unit of X positive dirction, with this border for benchmark, set up the detection exposure layout that X positive dirction is the most responsive, thus set up the detection method that performance aimed at by more sensitive litho machine.Now, without the need to the distance of many translations 1/2Dx again, as shown at right.Therefore, in theory, translation distance mostly is Dx most can determine Failure Boundaries.

The exposing unit of the present embodiment is of a size of 26*33mm.

The invention provides the detection method that performance aimed at by a kind of litho machine, by the method for translation incomplete exposing unit exposure layout, measure between complete exposing unit and incomplete exposing unit repeatedly to the center offset of mark, determine the Failure Boundaries of litho machine to incomplete exposing unit alignment compensation ability, with this border for benchmark, set up the most responsive detection exposure layout, thus set up the detection method that performance aimed at by more comprehensive and sensitive litho machine.

By illustrating and accompanying drawing, giving the exemplary embodiments of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.

For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.

Claims (11)

1. a detection method for performance aimed at by litho machine, and it is characterized in that, it comprises the following steps:
Step S01, provides wafer to be exposed;
Step S02, makes mask plate, and this mask plate pattern has the rectangle that X-direction and Y-direction length are respectively 4Dx and 4Dy, have outside this rectangle four angles at least two groups along this rectangle cross central line or longitudinal centre line symmetry repeatedly to mark; Wherein, Dx is the length of the X-direction of exposing unit in wafer, and Dy is the length of exposing unit Y-direction in wafer;
Step S03, by gluing, exposure and developing process, by the rectangle of this mask plate and repeatedly transfer on wafer to indicia patterns, described wafer contains the exposing unit of the same size distributed with Y-direction array-like in X direction, this exposing unit comprises the complete exposing unit of wafer zone line and the incomplete exposing unit in crystal round fringes region, adhere to separately between the exposing unit of wafer first group of adjacent two exposing units repeatedly to mark and second group repeatedly mutually repeatedly right to mark;
Step S04, by repeatedly to measuring instrument, measures in wafer and changes to the center offset of mark between complete exposing unit and complete exposing unit, be defined as standard deviation amount;
Step S05, by repeatedly to measuring instrument, measure crystal round fringes region and often organize repeatedly to the center offset of mark between adjacent complete exposing unit and incomplete exposing unit, be defined as edge offset amount, this edge offset amount comprises X-direction and Y-direction;
Step S06, judges whether the most edge exposure unit of wafer X-direction or Y-direction is complete exposing unit, if not, all exposing units in X direction or Y-direction relative to wafer translation one predeterminable range, then repeat step S03 to S06; If so, then step S07 is entered;
Step S07, compares the often group edge offset amount and standard deviation amount that record, determines the Failure Boundaries of litho machine to incomplete exposing unit alignment compensation ability;
Step S08 take Failure Boundaries as benchmark, detects the aligning performance of litho machine.
2. the detection method of performance aimed at by litho machine according to claim 1, it is characterized in that: this rectangle four angles have four groups repeatedly to mark, often group repeatedly to mark comprise nonoverlapping first repeatedly to mark and second repeatedly to mark, these four groups are repeatedly symmetrical along this rectangle central rotation to mark, make first group of adjacent two exposing unit edges repeatedly to mark and second group repeatedly staggered repeatedly right to mark.
3. the detection method of performance aimed at by litho machine according to claim 2, it is characterized in that: this first repeatedly to mark with second repeatedly to being labeled as the different square of size.
4. the detection method of performance aimed at by litho machine according to claim 3, it is characterized in that: this first repeatedly to mark and second repeatedly in the Cutting Road of mark between adjacent exposure unit.
5. the detection method of performance aimed at by litho machine according to claim 1, it is characterized in that: this center offset is that first group of adhering to separately between two adjacent exposure unit repeatedly changes to the center offset of mark to mark and second group, and between this standard deviation Liang Shi crystal circle center five complete exposing units, many groups are repeatedly to the center offset marked.
6. the detection method of performance aimed at by litho machine according to claim 5, it is characterized in that: relative to all exposing units of wafer translation in step S06, to change the exposure integrity degree of edge exposure unit.
7. the detection method of performance aimed at by litho machine according to claim 5, it is characterized in that: in step S06, all exposing units are 1/8Dx-1Dx or 1/8Dy-1Dy relative to the translation distance of wafer.
8. the detection method of performance aimed at by the litho machine according to any one of claim 1 to 7, it is characterized in that: the Failure Boundaries in step S07 with the distalmost end exposing unit that edge offset amount is consistent with standard deviation amount being this wafer X positive dirction, X negative direction, Y positive dirction or Y negative direction.
9. the detection method of performance aimed at by litho machine according to claim 8, it is characterized in that: if the exposing unit at most edge is incomplete exposing unit, then compare the edge offset amount after translation and standard deviation amount, as unanimously, then using the exposing unit at most edge as Failure Boundaries, as inconsistent, then using the inside exposing unit in most edge as Failure Boundaries.
10. the detection method of performance aimed at by litho machine according to claim 8, it is characterized in that: in step S08 to the aligning performance of litho machine detect comprise employing two stacking to mark repeatedly to detection method or the detection method of individual layer adjacent exposure unit repeatedly to mark repeatedly to side-play amount of side-play amount.
The detection method of performance aimed at by 11. litho machines according to claim 8, it is characterized in that: step S03 selects I Lithography machine, KrF litho machine, ArF litho machine or EUV lithography machine.
CN201410261079.3A 2014-06-12 2014-06-12 The detection method of performance aimed at by litho machine CN103995440B (en)

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