CN107561875A - A kind of method that overlay error is measured and problem is assessed - Google Patents
A kind of method that overlay error is measured and problem is assessed Download PDFInfo
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- CN107561875A CN107561875A CN201710796702.9A CN201710796702A CN107561875A CN 107561875 A CN107561875 A CN 107561875A CN 201710796702 A CN201710796702 A CN 201710796702A CN 107561875 A CN107561875 A CN 107561875A
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Abstract
The present invention provides a kind of method that overlay error is measured and problem is assessed, including：Input overlay error and measure scheme, input whole overlay errors and measure identification information, input target bound and overlay error anomaly assessment standard, complete Data Collection, measuring value and bound are contrasted, the data point markers exceeded are problem points, according to evaluation criteria, judge whether that new data collection plan need to be increased, if problem points proportion exceedes setting value, then generate overlay error exception reporting, otherwise judge which measurement mark need to be included into new data collection plan is measured according to evaluation criteria, if there are problem points in the metric data newly obtained, then marked, until the metric data of overlay error is all fallen within the range of target bound, generate overlay error problem and the report of problem influence degree.The present invention, which can be reduced, determines the overlay error problem scope time, obtains overlay error problem and problem influence degree, is easy to engineer to judge and takes next step processing scheme.
Description
Technical field
The present invention relates to microelectronics photoetching process field, and more particularly to a kind of intelligent overlay error measures and problem is commented
The method estimated.
Background technology
The figure (working as layer) retained after exposure imaging on a photoresist must be with existing figure (front layer) in wafer substrate
Alignment, connection is correct between so just can guarantee that device each several part.Alignment error is very much the master for causing shorted devices and open circuit greatly
One of reason is wanted, it greatly influences the yield of device.In the flow of IC manufacturing, there is special equipment to pass through measurement
Wafer is taken in relative position between layer pattern and preceding layer pattern to determine the error of alignment (overlay).Specially used on wafer
Being identified to measure the figure of overlay error for alignment, these figures have been placed on the region specified in designing mask,
Typically at the edge of exposing unit, also there is the mark of the alignment after improving to be placed in exposing unit near device.Alignment misses
Difference is quantitatively described when layer relative to front layer along X and the deviation of Y-direction, and this deviation is in the distribution of crystal column surface
A key index of photoetching process quality is detected, optimal situation is that alignment misses when layer is aligned completely with the figure of front layer
Difference is zero.
On the measurement of overlay error, the general method of industry is to be carried out according to pre-determined measurement scheme, this
Measurement scheme includes measuring which exposing unit on wafer, which alignment mark is measured in an exposing unit, such as figure one
(a) shown in (b), totally 36 set blazes of four positions of nine fixed each exposing units of exposing unit are respectively measured
Know, measure totally 117 alignment marks of nine positions of 13 fixed each exposing units of exposing unit.Engineer is based on
This obtained data of measurement scheme fixed judges the overlay error when layer and front layer, when some or multiple measuring points
Overlay error has during exception, it is necessary to the scope that measurement scheme goes to decision problem region be additionally set up, so as to take processing in next step
Method.The problem of this general method is that the processing mode for going to establish new measurement scheme again after pinpointing the problems is taken
Between it is long, adds additional load and unloading wafer time, influence production capacity, and abnormity point is likely to occur at an arbitrary position, people
For go to decision problem region to easily cause omission.Present industry to the capacity requirements more and more higher of semiconductor, photoetching process
Measurement also faces huge challenge, and how not omit problem points again while improving and measuring speed is our asking of being faced
Topic.
The content of the invention
Measured the invention provides an intelligent overlay error and the method for problem assessment, reduction determine that overlay error is asked
The time of scope is inscribed, disposably obtains overlay error problem and problem influence degree, is easy to engineer to judge and takes in next step
Processing scheme.
In order to achieve the above object, the present invention proposes a kind of method that overlay error is measured and problem is assessed, including following
Step：
The overlay error that input is normally fixed measures scheme；
Input the information that all available overlay error measurement identifies on wafer；
Input the target bound and overlay error anomaly assessment standard of corresponding overlay error；
Normally fixed overlay error Data Collection is completed, during measurement, often obtains a measurement for measuring mark
Value, system automatically contrasts itself and target bound, if measuring value directly generates alignment in the range of target bound
Discrepancy Report, if the data point beyond target bound, then it is marked beginning next step；
The problem of for being marked point, according to evaluation criteria, whether automatic decision needs to increase new data is received system
Collection scheme, if problem points proportion exceedes setting value, overlay error exception reporting is directly generated, if ratio is being set
In the range of value, then start next step；
System needs to measure which to identify further according to evaluation criteria automatic decision includes new data collection plan progress
Measure, if the metric data newly obtained starts next step in the range of target bound, if the measurement newly obtained
Still have in data beyond target bound the problem of point, be then marked again, repeat this step；
By that analogy, until the metric data of overlay error is all fallen within the range of target bound, generation overlay error is asked
Topic and the report of problem influence degree.
Further, the available overlay error of the whole measures edge and exposing unit that mark is included in exposing unit
All measurements mark near middle device.
Further, overlay error anomaly assessment standard setting problem points proportions, the ratio are based on difference
Overlay error required precision set.
Further, the overlay error anomaly assessment standard sets a distance and asked from wafer general level
The distance of point is inscribed, the measurement mark in the distance range can be included into new data collection plan, and the distance is based on different
Mark distribution density is measured to be set.
Further, the overlay error anomaly assessment standard sets a distance and asked from exposing unit aspect
The distance at exposing unit center where topic point is identical with problem points relative position coordinates in the exposing unit in the distance range
Measurement mark can be included into new data collection plan, the distance is set based on different exposing unit distribution densities.
Further, the measurement mark in the range of the problem of the being marked point predetermined distance of adjusting the distance is measured
When, the point measured can be skipped.
The method assessed with problem is measured the invention provides an intelligent overlay error.First, input is normal solid
Fixed overlay error measures scheme, then inputs all information of available overlay error measurement mark, then input phase on wafer
The target bound and overlay error anomaly assessment standard for the overlay error answered, then complete the overlay error normally fixed
Data Collection, during measurement, a measuring value for measuring mark often being obtained, system automatically contrasts itself and target bound,
Labeled out beyond the data point of target bound, the problem of point for being marked, system is sentenced automatically according to evaluation criteria
It is disconnected whether to need to increase new data collection plan, if problem points proportion exceedes setting value, directly generate alignment mistake
Poor exception reporting, if ratio, in range of set value, which measuring mark be system need further according to evaluation criteria automatic decision
Knowledge is included new data collection plan and measured, if still there is asking beyond target bound in the metric data newly obtained
Point is inscribed, then is marked again, by that analogy, until the metric data of overlay error is all fallen within the range of target bound,
Generate overlay error problem and the report of problem influence degree.Intelligent overlay error provided by the invention measures what is assessed with problem
Method, it is possible to reduce the time of overlay error problem scope is determined, disposably obtains overlay error problem and problem influence degree,
It is easy to engineer to judge and takes next step processing scheme.
Brief description of the drawings
Fig. 1 a show four position views for measuring nine fixed each exposing units of exposing unit.
Fig. 1 b show nine position views for measuring 13 fixed each exposing units of exposing unit.
The overlay error that Fig. 2 show present pre-ferred embodiments measures the method flow diagram assessed with problem.
Embodiment
The embodiment of the present invention is provided below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment.Root
According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simple
The form of change and non-accurately ratio is used, be only used for conveniently, lucidly aiding in illustrating the purpose of the embodiment of the present invention.
Fig. 2 is refer to, the overlay error that Fig. 2 show present pre-ferred embodiments measures the method flow assessed with problem
Figure.The present invention proposes a kind of method that overlay error is measured and problem is assessed, and comprises the following steps：
SO1：The overlay error that input is normally fixed measures scheme；In preferred embodiment, nine as shown in figure one (a)
The information of four positions of each exposing unit of exposing unit；Normally fixed overlay error measures scheme and included but is not limited to
Four positions of nine each exposing units of exposing unit as shown in figure one (a) (b) and 13 exposing units each expose
The data collection plan of nine positions of unit；
SO2：Input the information that all available overlay error measurement identifies on wafer；Specially will each it be exposed on wafer
The information input of each measurement mark of unit；
SO3：Input the target bound and overlay error anomaly assessment standard of corresponding overlay error；Preferred embodiment
In for input overlay error target bound ± 8nm, and overlay error anomaly assessment standard：Problem points proportion threshold value
17%；Wafer general level distance 7mm, exposing unit aspect distance 21mm；
SO4：Normally fixed overlay error Data Collection is completed, during measurement, one is often obtained and measures mark
Measuring value, system automatically contrasts itself and target bound, if measuring value directly generates in the range of target bound
Overlay error is reported, if the data point beyond target bound, is then marked beginning next step；In this implementation
In example, the overlay error Data Collection normally fixed specially is completed, during measurement, often obtains an amount for measuring mark
Measured value, system automatically contrast itself and target bound ± 8nm, if measuring value in the range of target bound ± 8nm,
Overlay error report is directly generated, if the data point beyond ± 8nm scopes, is then marked and starts SO5；
SO5：The problem of for being marked point, according to evaluation criteria, whether automatic decision needs to increase new number system
According to collection scheme, if problem points proportion exceedes setting value, overlay error exception reporting is directly generated, if ratio exists
In range of set value, then start next step；In the present embodiment, concrete operations are the problem of point, system for being marked
According to evaluation criteria, whether automatic decision needs to increase new data collection plan, if the problem of being marked point quantity is 7
Individual, proportion is more than threshold value 17% for 19.44%, illustrates that the overlay error of wafer has the problem of larger, directly generates set
Error exception reporting is carved, if the problem of being marked point quantity is 1, proportion is less than threshold value 17% for 2.78%, then
Start SO6；
SO6：System needs to measure to identify by which to include new data collection plan further according to evaluation criteria automatic decision
Measured, if the metric data newly obtained starts next step in the range of target bound, if newly obtain
Still have in metric data beyond target bound the problem of point, be then marked again, repeat this step；In the present embodiment
In, specific handling process is：System needs to measure which to identify further according to evaluation criteria automatic decision includes new data receipts
Collection scheme is measured, and the measurement in the range of this 1 problem points 7mm is identified, and is exposed where this 1 problem points
Measured in exposing unit in the range of the 21mm of light unit center with problem points (in exposing unit) relative position coordinates identical
Mark includes new data collection plan, if the metric data newly obtained starts in the range of target bound ± 8nm
SO7, if still had in the metric data newly obtained beyond target bound ± 8nm the problem of points, then it is marked,
Repeat SO6；
SO7：By that analogy, until the metric data of overlay error is all fallen within the range of target bound, generation alignment misses
Poor problem and problem influence degree report.
Further, the available overlay error of the whole measures edge and exposing unit that mark is included in exposing unit
All measurements mark near middle device.
Further, overlay error anomaly assessment standard setting problem points proportions, the ratio are based on difference
Overlay error required precision set.
Further, the overlay error anomaly assessment standard sets a distance and asked from wafer general level
The distance of point is inscribed, the measurement mark in the distance range can be included into new data collection plan, and the distance is based on different
Mark distribution density is measured to be set.
Further, the overlay error anomaly assessment standard sets a distance and asked from exposing unit aspect
The distance at exposing unit center where topic point is identical with problem points relative position coordinates in the exposing unit in the distance range
Measurement mark can be included into new data collection plan, the distance is set based on different exposing unit distribution densities.
Further, the measurement mark in the range of the problem of the being marked point predetermined distance of adjusting the distance is measured
When, the point measured can be skipped.
In summary, the method assessed with problem is measured the invention provides an intelligent overlay error.First, input
Normally fixed overlay error measures scheme, then inputs the information that whole available overlay errors on wafer measure mark,
The target bound and overlay error anomaly assessment standard of corresponding overlay error are inputted again, then complete what is normally fixed
Overlay error Data Collection, during measurement, often obtain one measure mark measuring value, system automatically by its with above and below target
Limit contrast, labeled out beyond the data point of target bound, the problem of point for being marked, system is marked according to assessment
Whether standard, automatic decision need to increase new data collection plan, directly raw if problem points proportion exceedes setting value
Into overlay error exception reporting, if ratio, in range of set value, system is needed which further according to evaluation criteria automatic decision
The knowledge of tittle mark is included new data collection plan and measured, if still had in the metric data newly obtained in target
The problem of lower limit point, then be marked again, by that analogy, until the metric data of overlay error all falls within target bound
In the range of, generate overlay error problem and the report of problem influence degree.Intelligent overlay error provided by the invention is measured and asked
Inscribe the method assessed, it is possible to reduce determine the time of overlay error problem scope, disposably obtain overlay error problem and problem
Influence degree, it is easy to engineer to judge and takes next step processing scheme.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.Skill belonging to the present invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, the scope of protection of the present invention is defined by those of the claims.
Claims (6)
1. a kind of method that overlay error is measured and problem is assessed, it is characterised in that comprise the following steps：
The overlay error that input is normally fixed measures scheme；
Input the information that all available overlay error measurement identifies on wafer；
Input the target bound and overlay error anomaly assessment standard of corresponding overlay error；
Normally fixed overlay error Data Collection is completed, during measurement, a measuring value for measuring mark is often obtained, is
System automatically contrasts itself and target bound, if measuring value directly generates overlay error in the range of target bound
Report, if the data point beyond target bound, is then marked beginning next step；
The problem of for being marked point, according to evaluation criteria, whether automatic decision needs to increase new Data Collection side system
Case, if problem points proportion exceedes setting value, overlay error exception reporting is directly generated, if ratio is in setting value model
In enclosing, then start next step；
Which measuring mark be system need further according to evaluation criteria automatic decision to be included new data collection plan and is measured,
If the metric data newly obtained in the range of target bound, starts next step, if the metric data newly obtained
In still have beyond target bound the problem of point, then be marked again, repeat this step；
By that analogy, until the metric data of overlay error is all fallen within the range of target bound, generation overlay error problem and
Problem influence degree is reported.
The method that 2. overlay error according to claim 1 is measured and problem is assessed, it is characterised in that the whole can use
Overlay error measure mark be included in the edge and exposing unit of exposing unit near device all measurements mark.
The method that 3. overlay error according to claim 1 is measured and problem is assessed, it is characterised in that the overlay error
Anomaly assessment standard setting problem points proportions, the ratio are set based on different overlay error required precisions.
The method that 4. overlay error according to claim 1 is measured and problem is assessed, it is characterised in that the overlay error
Anomaly assessment standard sets the distance of a distance problem point, the amount in the distance range from wafer general level
Mark, which is known, can be included into new data collection plan, and the distance is set based on different measurement mark distribution densities.
The method that 5. overlay error according to claim 1 is measured and problem is assessed, it is characterised in that the overlay error
Anomaly assessment standard is from exposing unit aspect, the distance at exposing unit center where setting a distance problem point,
New data receipts can be included into by measuring mark with problem points relative position coordinates identical in exposing unit in the distance range
Collection scheme, the distance are set based on different exposing unit distribution densities.
The method that 6. overlay error according to claim 1 is measured and problem is assessed, it is characterised in that the mark of adjusting the distance
When the measurement mark that note comes out in the range of the problem of point predetermined distance is measured, the point measured can be skipped.
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| TWI700562B (en) * | 2018-02-27 | 2020-08-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | Alignment mark positioning in a lithographic process |
| WO2021072751A1 (en) * | 2019-10-18 | 2021-04-22 | 郑州飞龙医疗设备有限公司 | Method for controlling striking strength of pulse therapy gun |
| CN113496906A (en) * | 2020-03-19 | 2021-10-12 | 中芯国际集成电路制造(上海)有限公司 | Wafer overlay measuring method and device, storage medium and electronic equipment |
| CN115407621A (en) * | 2022-11-01 | 2022-11-29 | 合肥新晶集成电路有限公司 | Control method, control device and alignment system for exposure alignment precision |
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