CN106154758A - Alignment matching process between different litho machines - Google Patents
Alignment matching process between different litho machines Download PDFInfo
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- CN106154758A CN106154758A CN201510170806.XA CN201510170806A CN106154758A CN 106154758 A CN106154758 A CN 106154758A CN 201510170806 A CN201510170806 A CN 201510170806A CN 106154758 A CN106154758 A CN 106154758A
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Abstract
The present invention relates to the alignment matching process between a kind of different litho machine, comprise the following steps: mask plate is provided；Mask pattern it is formed with, the overlay mark figure that mask pattern includes equidistantly and is arranged into a rectangular array on mask plate；Lithography performance in first litho machine and the second litho machine preferably one is set to initial board, and another is set to secondary board；Initial board and mask plate is utilized to be lithographically formed litho pattern for the first time on the test die；Utilize secondary board will to form secondary litho pattern on the first time litho pattern of the graph exposure on mask plate to test wafer and after developing after mask plate is carried out a certain amount of skew relative to alignment position；Test the alignment precision between first time litho pattern and secondary litho pattern and according to alignment precision, the parameter of secondary board be adjusted.Alignment matching process between above-mentioned different litho machine has simple to operate and that production cost is relatively low advantage.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the alignment coupling between a kind of different litho machine
Method.
Background technology
In the manufacturing process of semiconductor device, it usually needs successively by different mask more than at least two-layer
Pattern overlapping is on wafer.In order to ensure the electric conductivity of semiconductor device, every layer pattern is required for and other
Layer pattern has preferable alignment (Overlay) precision.In process of production in view of production cost often
Mixing coupling is used to process some non-key figure layers, it is therefore desirable to realize the alignment coupling between each litho machine
(Overlay matching).The most conventional litho machine includes stepper (Stepper) and scan-type
Litho machine (Scanner).Mixing coupling includes the coupling between the high low side litho machine equipment of same type and not
With the coupling between the high low side litho machine equipment of type.To different litho machines in traditional mixing matching process
Between alignment matching process operation complex, relatively costly.
Summary of the invention
Based on this, it is necessary to for the problems referred to above, it is provided that a kind of different photoetching simple to operate and lower-cost
Alignment matching process between machine.
Alignment matching process between a kind of different litho machine, is used for realizing the first litho machine and the second litho machine
Between alignment coupling, comprise the following steps: provide mask plate；It is formed with mask pattern on described mask plate,
The overlay mark figure that described mask pattern includes equidistantly and is arranged into a rectangular array；By described first photoetching
In machine and the second litho machine, lithography performance preferably is set to initial board, and another is set to secondary machine
Platform；Described initial board and described mask plate is utilized to be lithographically formed litho pattern for the first time on the test die；
Described secondary board is utilized to cover described after described mask plate is carried out a certain amount of skew relative to alignment position
Graph exposure in film version forms secondary photoetching on the first time litho pattern of described test wafer and after developing
Figure；The offset distance of described mask plate is less than the spacing of described overlay mark figure；Test described first time
Alignment precision between litho pattern and described secondary litho pattern and according to described alignment precision to described secondary
The parameter of board is adjusted.
Wherein in an embodiment, described overlay mark figure is regular polygon.
Wherein in an embodiment, the size of described mask pattern is 26mm*32mm, described overlay mark
Figure be size be the square of 1mm*1mm.
Wherein in an embodiment, the center distance between described overlay mark figure is 2mm.
Wherein in an embodiment, described utilize described initial board and described mask plate at test wafer
On be lithographically formed a litho pattern step before further comprise the steps of: the photoetching adjusting described initial board
Can parameter.
Wherein in an embodiment, in the step of described offer mask plate, described mask pattern also includes lock
Position labelling；Described lock-bit is labeled as the overlay mark figure on the corner being positioned at described mask plate through demarcating.
Wherein in an embodiment, described first litho machine is scan-type litho machine；Described second litho machine
For stepper.
Wherein in an embodiment, described scan-type litho machine uses scribe line labelling to carry out para-position；Described
Described initial board and described mask plate is utilized to be lithographically formed the step of a litho pattern on the test die
Further comprise the steps of: before and utilize described scribe line labelling to carry out between described mask plate and described test wafer
Para-position.
Alignment matching process between above-mentioned different litho machine needs only provide for a mask plate and can realize not
Mate with the alignment between litho machine, carve matching process relative to traditional different mantle and use a mask plate less,
Make the simple to operate of alignment matching process, reduce production cost simultaneously.
Accompanying drawing explanation
Fig. 1 is the flow chart of the alignment matching process between the different litho machines in an embodiment；
Fig. 2 is the mask provided in the alignment matching process between the different litho machines in embodiment illustrated in fig. 1
The layout of the mask pattern in version；
Fig. 3 is to complete step in the alignment matching process between the different litho machines in embodiment illustrated in fig. 1
The pattern formed on the test die after S150.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and reality
Execute example, the present invention is further elaborated.Only should be appreciated that specific embodiment described herein
Only in order to explain the present invention, it is not intended to limit the present invention.
Alignment matching process between a kind of different litho machine, is used for realizing the first litho machine and the second litho machine
Between alignment coupling.First litho machine and the second litho machine can be the high low side light of same model different series
Carve machine equipment or different types of high low side litho machine equipment.In the present embodiment, the first litho machine and
Two litho machines are the high low side litho machine equipment of different model.Wherein, the first litho machine is scan-type litho machine,
Second litho machine is stepper.Fig. 1 is the flow process of the alignment matching process between a kind of different litho machine
Figure, comprises the following steps.
S110, it is provided that mask plate.
Tradition realizes the alignment matching process between stepper and scan-type litho machine to be needed to be two light
Quarter, machine provided one piece of mask plate respectively.Therefore, two pieces of mask plates of preparation can make operating process complicated and cost
Higher.In the present embodiment, only providing the alignment coupling that one piece of mask plate realizes between different machine, operation is relatively
For simple and cost is relatively low.
Being formed with mask pattern on the mask plate provided, the layout of mask pattern is as shown in Figure 2.Mask pattern bag
The overlay mark figure 200 included equidistantly and be arranged into a rectangular array.The size of mask pattern can be according to first
Maximum field of view in litho machine and the second litho machine determines.In the present embodiment, the size of mask pattern is
26mm*32mm, the spacing between overlay mark figure 200 is 2mm, and overlay mark figure 200 is square
And its size is 1mm*1mm.In other examples, overlay mark figure 200 is it can also be provided that just
Other regular polygons such as hexagon, octagon or circle.The rectangular array of overlay mark figure 200 is uniform
Distribution can react the alignment precision in visual field the most accurately.
In one embodiment, mask pattern also includes lock-bit labelling, in order to alignment precision measures the right of process
Bit manipulation.Specifically, the overlay mark figure that lock-bit is labeled as on the corner being positioned at mask pattern through demarcating
Shape.In other examples, lock-bit labelling can be arranged on other positions being easy to para-position.At this
In embodiment, lock-bit labelling includes the first lock-bit labelling and the second lock-bit labelling.Wherein, the first lock-bit mark
Note is determined according to the visual field size of the first litho machine, and the i.e. first lock-bit is labeled as being positioned at the first litho machine
Overlay mark figure (such as 202,204,206 and 208) on the corner on mask pattern in field range.
Second lock-bit labelling then determines according to the visual field size of the second litho machine, does not shows in Fig. 2.
S120, arranges initial board and secondary board.
Different litho machines its there is different photolithographic parameters, the lithography performance the most also allowing for the two has
Difference.The parameter of the lithography performance affecting litho machine include alignment orthogonality, stepping accuracy, pattern distortion,
Wafer picks and places repeatability, mask plate rotation, self alignment precision etc..In the present embodiment, lithography performance is good
Bad mainly by several parameters such as lens image distortion, slide glass movable workbench precision and pre-aligning accuracy
It is determined.
By preferably (lens image less, the slide glass work of distortion of lithography performance in the first litho machine and the second litho machine
Station mobile accuracy is higher and pre-para-position is preferable) one be set to initial board, another is set to two
Secondary board.Initial board refers to for test wafer carrying out photoetching and forming the litho machine of a litho pattern；
Secondary board refers to for test wafer carrying out photoetching and forming two on a litho pattern of test wafer
The litho machine of secondary litho pattern.In stepper and scan-type litho machine, the mirror of scan-type litho machine
Head pattern distortion is less, therefore can be determined that its lithography performance is better than stepper, therefore by scan-type light
Machine was set to initial board and stepper was set to secondary board quarter.
S130, utilizes initial board and mask plate to be lithographically formed a litho pattern on the test die.
In one embodiment, before performing step S130, step can also be first carried out: adjust the light of initial board
Carve performance parameter, so that the lithography performance of initial board is in optimum state.In the present embodiment, meeting
Camera lens and the mechanical performance of initial board (scan-type litho machine) are adjusted to optimum state, and increases load
Sheet stage coordinates compensates with being preferably minimized bit-errors by disk aspect, it is ensured that alignment matching precision.?
In the present embodiment, after adjusting the step of lithography performance parameter of initial board, before step S130,
Also can para-position between advanced line mask version and test wafer.In the present embodiment, scan-type litho machine is adopted
Carrying out para-position with scribe line labelling, will not take die site, aligning accuracy is higher.
Use the figure transfer that well known to a person skilled in the art that set lithography can realize a litho pattern,
This place does not repeats.
S140, utilizes secondary board by this mask plate after being offset relative to alignment position by mask plate
Graph exposure forms secondary litho pattern on a litho pattern of test wafer and after developing.
In a photolithographic process, mask plate is arranged on mask plate workbench and brilliant with the test on wafer work platform
Circle is directed at.Before carrying out secondary photoetching, can by mask plate relative to a photoetching process to level
Put and carry out a certain amount of skew and make secondary litho pattern and a litho pattern the most overlapping, thus only make
A litho pattern and the preparation of secondary litho pattern, simple to operate and cost can be completed with one piece of mask plate
Relatively low.The side-play amount of mask plate is less than the spacing of overlay mark figure.Fig. 3 is for testing after completing step S140
The figure formed on wafer.
S150, tests the alignment precision between first time litho pattern and secondary litho pattern and according to alignment essence
Spend the parameter to secondary board to be adjusted.
Alignment precision between two layer patterns can use alignment precision measuring method commonly used in the art to record,
Do not repeat.In test process, can only four lock-bit labellings in litho machine visual field (shot) be entered
Row test, it is also possible to overlay mark figure all of in visual field is tested or chosen according to actual demand.
According to this numerical value to the lithography performance in secondary board after the alignment precision tested out between two layer patterns
Parameter is adjusted, thus compensates the actual variance between two boards, it is achieved the first litho machine and the second light
Coupling between quarter machine, thus lower the rework rate of product and then reduce production cost.In the present embodiment,
The photolithographic parameters of secondary board was not adjusted before performing step S140, the most only needs secondary
The photolithographic parameters of board does and once adjusts, and decreases operating procedure.In the present embodiment, for improving set
Carve matching precision, also can regularly replace test wafer.
Alignment matching process between above-mentioned different litho machine needs only provide for a mask plate and can realize not
Mate with the alignment between litho machine, carve matching process relative to traditional different mantle and use a mask plate less,
Make the simple to operate of alignment matching process, reduce production cost simultaneously.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, the most right
The all possible combination of each technical characteristic in above-described embodiment is all described, but, if these skills
There is not contradiction in the combination of art feature, is all considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed,
But can not therefore be construed as limiting the scope of the patent.It should be pointed out that, for this area
For those of ordinary skill, without departing from the inventive concept of the premise, it is also possible to make some deformation and change
Entering, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be with appended power
Profit requires to be as the criterion.
Claims (8)
1. the alignment matching process between different litho machines, is used for realizing the first litho machine and the second photoetching
Alignment coupling between machine, comprises the following steps:
Mask plate is provided；Be formed with mask pattern on described mask plate, described mask pattern include equidistantly and
The overlay mark figure being arranged into a rectangular array；
Lithography performance in described first litho machine and the second litho machine preferably one is set to initial board,
Another is set to secondary board；
Described initial board and described mask plate is utilized to be lithographically formed light needle drawing for the first time on the test die
Shape；
Utilize described secondary board by institute after described mask plate is carried out a certain amount of skew relative to alignment position
State graph exposure on mask plate and form secondary to the first time litho pattern of described test wafer and after developing
Litho pattern；The offset distance of described mask plate is less than the spacing of described overlay mark figure；
Test the alignment precision between described first time litho pattern and described secondary litho pattern and according to described
The parameter of described secondary board is adjusted by alignment precision.
Alignment matching process between different litho machine the most according to claim 1, it is characterised in that
Described overlay mark figure is regular polygon.
Alignment matching process between different litho machine the most according to claim 2, it is characterised in that
The size of described mask pattern is 26mm*32mm, described overlay mark figure be size be 1mm*1mm
Square.
Alignment matching process between different litho machine the most according to claim 1, it is characterised in that
Center distance between described overlay mark figure is 2mm.
Alignment matching process between different litho machine the most according to claim 1, it is characterised in that
Described initial board and described mask plate is utilized to be lithographically formed the step of a litho pattern on the test die
Further comprise the steps of: before
Adjust the lithography performance parameter of described initial board.
Alignment matching process between different litho machine the most according to claim 1, it is characterised in that
In the step of described offer mask plate, described mask pattern also includes lock-bit labelling；Described lock-bit be labeled as through
Cross the overlay mark figure on corner that is that demarcate and that be positioned at described mask plate.
Alignment matching process between different litho machine the most according to claim 1, it is characterised in that
Described first litho machine is scan-type litho machine；Described second litho machine is stepper.
Alignment matching process in different litho machine the most according to claim 7, it is characterised in that institute
Stating scan-type litho machine uses scribe line labelling to carry out para-position；
Described initial board and described mask plate is utilized to be lithographically formed litho pattern for the first time on the test die
Step before further comprise the steps of: and utilize described scribe line labelling to carry out described mask plate and described test wafer
Between para-position.
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| CN201510170806.XA CN106154758A (en) | 2015-04-10 | 2015-04-10 | Alignment matching process between different litho machines |
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| CN201510170806.XA CN106154758A (en) | 2015-04-10 | 2015-04-10 | Alignment matching process between different litho machines |
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| CN107422611A (en) * | 2017-07-27 | 2017-12-01 | 中国电子科技集团公司第五十五研究所 | A kind of method for realizing the matching of ASML different model litho machines alignment |
| CN107728435A (en) * | 2017-11-14 | 2018-02-23 | 扬州扬杰电子科技股份有限公司 | A kind of silicon wafer method of photolithographic exposure based on Canon's exposure machine and Perkin elmer exposure machines |
| CN107731706A (en) * | 2017-10-20 | 2018-02-23 | 上海华力微电子有限公司 | A kind of alignment precision detecting method |
| CN109375476A (en) * | 2018-11-26 | 2019-02-22 | 合肥芯碁微电子装备有限公司 | A kind of calibration compensation method and system of lithographic equipment exposure consistency |
| CN109799675A (en) * | 2019-01-18 | 2019-05-24 | 成都路维光电有限公司 | A kind of mask plate apparatus and process adjustment method |
| CN110083020A (en) * | 2019-03-01 | 2019-08-02 | 安徽工程大学 | A kind of method of different machine alignment precision optimization |
| CN111435219A (en) * | 2019-01-15 | 2020-07-21 | 无锡华润上华科技有限公司 | Alignment matching method between different photoetching machines |
| CN112578638A (en) * | 2019-09-29 | 2021-03-30 | 芯恩（青岛）集成电路有限公司 | Photoetching method, photoetching device and computer readable storage medium |
| CN112947016A (en) * | 2021-01-26 | 2021-06-11 | 湖北光安伦芯片有限公司 | Method for improving alignment precision of different-machine photoetching mixed operation |
| CN115793413A (en) * | 2022-12-22 | 2023-03-14 | 上海铭锟半导体有限公司 | Super-resolution pattern realization method and device based on alignment difference and double photoetching |
| WO2023184627A1 (en) * | 2022-04-02 | 2023-10-05 | 长鑫存储技术有限公司 | Semiconductor photoetching compensation method |
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| CN107422611A (en) * | 2017-07-27 | 2017-12-01 | 中国电子科技集团公司第五十五研究所 | A kind of method for realizing the matching of ASML different model litho machines alignment |
| CN107731706A (en) * | 2017-10-20 | 2018-02-23 | 上海华力微电子有限公司 | A kind of alignment precision detecting method |
| CN107731706B (en) * | 2017-10-20 | 2020-02-21 | 上海华力微电子有限公司 | Alignment precision spot inspection method |
| CN107728435A (en) * | 2017-11-14 | 2018-02-23 | 扬州扬杰电子科技股份有限公司 | A kind of silicon wafer method of photolithographic exposure based on Canon's exposure machine and Perkin elmer exposure machines |
| CN107728435B (en) * | 2017-11-14 | 2020-03-27 | 扬州扬杰电子科技股份有限公司 | Photoetching exposure method for silicon wafer |
| CN109375476A (en) * | 2018-11-26 | 2019-02-22 | 合肥芯碁微电子装备有限公司 | A kind of calibration compensation method and system of lithographic equipment exposure consistency |
| CN111435219A (en) * | 2019-01-15 | 2020-07-21 | 无锡华润上华科技有限公司 | Alignment matching method between different photoetching machines |
| CN111435219B (en) * | 2019-01-15 | 2023-08-25 | 无锡华润上华科技有限公司 | Method for matching alignment between different lithography machines |
| CN109799675A (en) * | 2019-01-18 | 2019-05-24 | 成都路维光电有限公司 | A kind of mask plate apparatus and process adjustment method |
| CN109799675B (en) * | 2019-01-18 | 2022-07-15 | 成都路维光电有限公司 | Mask equipment process debugging method |
| CN110083020B (en) * | 2019-03-01 | 2021-02-23 | 安徽工程大学 | Method for optimizing different machine alignment precision |
| CN110083020A (en) * | 2019-03-01 | 2019-08-02 | 安徽工程大学 | A kind of method of different machine alignment precision optimization |
| CN112578638A (en) * | 2019-09-29 | 2021-03-30 | 芯恩（青岛）集成电路有限公司 | Photoetching method, photoetching device and computer readable storage medium |
| CN112578638B (en) * | 2019-09-29 | 2022-07-01 | 芯恩（青岛）集成电路有限公司 | Photoetching method, photoetching device and computer readable storage medium |
| CN112947016A (en) * | 2021-01-26 | 2021-06-11 | 湖北光安伦芯片有限公司 | Method for improving alignment precision of different-machine photoetching mixed operation |
| CN112947016B (en) * | 2021-01-26 | 2023-01-03 | 湖北光安伦芯片有限公司 | Method for improving alignment precision of different-machine photoetching mixed operation |
| WO2023184627A1 (en) * | 2022-04-02 | 2023-10-05 | 长鑫存储技术有限公司 | Semiconductor photoetching compensation method |
| CN115793413A (en) * | 2022-12-22 | 2023-03-14 | 上海铭锟半导体有限公司 | Super-resolution pattern realization method and device based on alignment difference and double photoetching |
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