CN102540732A - Method for judging one-time photoetching result during semiconductor production - Google Patents
Method for judging one-time photoetching result during semiconductor production Download PDFInfo
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- CN102540732A CN102540732A CN2010105780533A CN201010578053A CN102540732A CN 102540732 A CN102540732 A CN 102540732A CN 2010105780533 A CN2010105780533 A CN 2010105780533A CN 201010578053 A CN201010578053 A CN 201010578053A CN 102540732 A CN102540732 A CN 102540732A
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Abstract
The invention discloses a method for judging a one-time photoetching result during semiconductor production. The method comprises the following steps of: arranging four groups of different test patterns on four shot peaks of a photoetching mask, wherein each group of test pattern comprises an outer alignment frame, an inner alignment frame, a group of outside rotary cursors, a group of inside rotary cursors, a reference rotary cursor and a shot original point marker; copying the same shot on a wafer by adopting a stepping repeated exposure mode, wherein the peak of each shot is overlapped with other three corresponding peaks of the three adjacent shots to form a test pattern to be detected; and according to technical standard requirements of different products, checking one-time photoetching by checking alignment markers consisting of the outer alignment frames and the inner alignment frames or measuring the alignment markers by using alignment test equipment and reading readings of the outside rotary cursors and the inside rotary cursors under a microscope. The method is simple and precise during production.
Description
Technical field
The present invention relates to the semiconductor lithography production technology, relate in particular to a kind of method of judging a lithographic results in the semiconductor lithography production technology.
Background technology
During the modern semiconductors photoetching process was produced, the photoetching first time of product must guarantee that the step distance of litho machine and the projection of reticle figure zoom to the consistent size on the disk.Owing to the alignment of photoetching for the first time to follow-up photoetching influences greatly, litho machine stepping orthogonality during photoetching for the first time and photoetching machine lens distortion need strictly be controlled, otherwise can't guarantee the alignment of the follow-up photoetching level of product simultaneously.
Photoetching process exactly with the figure on the mask (reticle or light shield) after projection exposure dwindles, repeat to be placed on the disk.The mask figure that forms that on disk, makes public is shot.Disk makes public without contraposition and is called single exposure, and all products all do not have figure on the disk when photoetching first, all is photoetching therefore.A qualified photoetching requires each shot separated continuously in level and vertical direction zero lap; The figure that projection generates is undistorted behind photoetching machine lens; As shown in Figure 1, disk 10 ' last each shot 100 ' zero lap does not in the horizontal and vertical directions have the compartment of terrain arrangement.
The way of judging a lithographic results at present is to generate " cruciform " mark in the exposure process, judges through the symmetry of inspection figure whether a photoetching is normal.As shown in Figures 2 and 3, four summits of each shot 100 ' all be respectively equipped with the figure 101 of " L " shape ', therefore four adjacent summits under normal circumstances will form complete " a ten " font figure or " mouth " font figure.Integrality and symmetry through the inspection figure can judge whether a photoetching is successful, but because everyone criterion is different thereby conclusion that draw also maybe be different, this will cause the appearance of faulty materials in the production run.
In order to address the above problem the necessary photo-etching mark that a lithographic results in a kind of improved judgement semiconductor lithography production technology is provided.
Summary of the invention
To the deficiency of prior art, the purpose of this invention is to provide simply a kind of and judge the method for a lithographic results in the semiconductor lithography production technology accurately.
The object of the invention is realized through following technical scheme is provided: a kind of method of judging a lithographic results in the semiconductor lithography production technology is characterized in that may further comprise the steps:
Four groups of different resolution charts are placed on four summits at the shot of reticle, and wherein every group of resolution chart comprises an alignment housing, an alignment inside casing, one group of outside rotating vernier, one group of inboard rotating vernier, a benchmark rotating vernier, a shot initial point mark;
Through the mode of step and repeat exposure, duplicate same shot at disk, other three summits of the correspondence of the summit of each shot and adjacent three shot coincide, and form required detection resolution chart;
Technological specification demand according to different product; Through overlay mark in test under microscope alignment housing and the formation of alignment inside casing; Or measure said overlay mark through the alignment testing apparatus; And, check a photoetching through read the reading of outside rotating vernier and inboard rotating vernier at microscopically.
Compared with prior art; The invention has the beneficial effects as follows: shot locates on the summit four groups of different resolution charts and overlaps the result that the detection resolution chart that forms can be realized a photoetching of quantitative discriminatory analysis; Thereby make the judgement of a lithographic results more accurate, and can satisfy the product demand of different process standard.
Description of drawings
Below in conjunction with accompanying drawing the present invention is described further:
Fig. 1 is the synoptic diagram of a qualified photoetching in the prior art.
Fig. 2 is the synoptic diagram of a shot in the prior art.
Fig. 3 is a synoptic diagram of judging in the prior art that a photoetching is whether qualified.
Fig. 4 is the synoptic diagram of a shot on the reticle of the present invention, wherein is respectively equipped with different resolution charts on four summits of shot.
Fig. 5 a to Fig. 5 b is respectively the synoptic diagram of the resolution chart on four summits of shot.
Fig. 6 is the final imaging synoptic diagram of the present invention on disk.
Fig. 7 is the synoptic diagram that the resolution chart on four summits of adjacent shot is stacked.
Embodiment
Followingly with preferred implementation implementation procedure of the present invention and essential content place is described with reference to accompanying drawing.
As shown in Figure 4, reticle comprises that is positioned at middle being latticed chip area 100 and being positioned at chip area interconnective scribe line 200 all around.Chip area 100 figure that forms that on disk, makes public is exactly a shot, so chip area 100 is also referred to as a shot.Four summits at shot 100 are respectively arranged with four resolution charts, and wherein the resolution chart in the upper left corner is 101a, and the resolution chart in the lower left corner is 101b, and the resolution chart in the upper right corner is 101c, and the resolution chart in the lower right corner is 101d. Resolution chart 101a, 101b, 101c, 101d are outside shot 100 lateral dimensions and vertical dimension, and the size of resolution chart is less than the size of place, place scribe line.
Shown in Fig. 5 a to Fig. 5 d; Each resolution chart 101a, 101b, 101c, 101d comprise an alignment housing 1a, 1b, 1c, 1d; One alignment inside casing 2a, 2b, 2c, 2d; One group of outside rotating vernier 4a, 4b, 4c, 4d, one group of inboard rotating vernier 5a, 5b, 5c, 5d, benchmark rotating vernier 3a, 3b, 3c, 3d and shot initial point mark 6a, 6b, 6c, 6d.Alignment housing 1a, 1b, 1c, 1d and alignment inside casing 2a, 2b, 2c, 2d are square, and initial point mark 6a, 6b, 6c, 6d are the pentagram shape of symmetry and are positioned at the centermost of resolution chart.Certainly, in other embodiments, alignment housing 1a, 1b, 1c, 1d, alignment housing 2a, 2b, 2c, 2d and initial point mark 6a, 6b, 6c, 6d also can be set to other shapes.Inboard rotating vernier 5a, 5b, 5c, 5d is arranged on the inboard of resolution chart discretely and the edge of distance test figure all is equidistant, and outside rotating vernier 4a, 4b, 4c, 4d press close to the edge of resolution chart.It should be noted that especially; Benchmark rotating vernier 3a, 3b, 3c, 3d are stacked and are formed by an outside rotating vernier 4a, 4b, 4c, 4d and an inboard rotating vernier 5a, 5b, 5c, 5d, and link together with one group of outside rotating vernier 4a, 4b, 4c, 4d.What also pay particular attention to is that the figure of shot initial point mark 6a, 6b, 6c, 6d must be able to be identified under the optical mode of ESEM commonly used, and typical sizes is at 10 microns.
Like Fig. 6 and shown in Figure 7, through the mode of step and repeat exposure, duplicate same shot100 at disk, other three summits of the correspondence of the summit of each shot 100 and adjacent three shot 100 coincide, and form required detection resolution chart 101.The resolution chart that it should be noted that four summits of each shot 100 all is details in a play not acted out on stage, but told through dialogues, and promptly independent exposure imaging once.That is to say and detect resolution chart 101a, 101b, 101c, 101d repetition 4 the exposure generation of resolution chart 101 by four adjacent summits.The alignment inside casing 2b in the alignment housing 1a in the upper left corner and the lower left corner is superimposed together; The alignment inside casing 2d in the alignment housing 1b in the lower left corner and the lower right corner is superimposed together; The alignment housing 1c in the upper right corner and the inside casing 2a in the upper left corner are superimposed together, and the alignment inside casing 2c in the alignment housing 1d in the lower right corner and the upper right corner is superimposed together.Alignment housing and the alignment inside casing formation overlay mark that is superimposed together, overlay mark adopt the overlapping mode of rotation, rather than pile up or stacked on top about traditional, can reflect the influence of photoetching machine lens distortion so fully.According to the technological specification demand of different product, can be through judge the result of a photoetching at the test under microscope overlay mark.Certainly; Also can measure the result that overlay mark is judged a photoetching, for example adopt box-in-box, bar-in-bar through the alignment testing apparatus; The box-in-bar mark supplies the test of alignment tester; Perhaps overlay mark is placed the specific resolution chart of all types of litho machines and is supplied each litho machine measurement alignment, and perhaps overlay mark can be placed the strip lines of ad hoc structure, measures the mode of adjacent lines centre distance through ESEM and judges alignment numerical value.Certainly, whether more than just for example, it is successful just can tentatively to understand a photoetching through the inspection overlay mark.
In addition; What is more important; Detect in the resolution chart 101; Inboard rotating vernier 5a, 5b, 5c, 5d and outside rotating vernier 4a, 4b, 4c, 4d are stacked, and can judge the result of a photoetching through the vernier reading between rotating vernier outside reading at microscopically and the inboard rotating vernier.Can judge just according to vernier reading thereby whether the real offset between adjacent shot confirms in standard whether a photoetching is successful.Like this, judge a photoetching as a result the time index that quantizes has just been arranged, avoided individual criterion problem and the product defect that causes.
In addition, initial point mark 6a, 6b, 6c, 6d have overlapped to form fully up and down and have detected the initial point mark 6 in the resolution chart 101, the Figure recognition when this shot initial point mark is worked out as the process of measurement of production line testing apparatus.
Certainly, after having judged lithographic results, in time revise the amount of distortion of photoetching machine lens, for example add the influence that the photolithographic exposure offset reduces photoetching machine lens distortion, thereby promote the lithographic results of product.
The present invention judges that the method for a lithographic results in the semiconductor lithography production technology is simply accurate, and criterion is quantized, and unified judgement conclusion helps the lifting of production efficiency.
Although be the example purpose; Preferred implementation of the present invention is disclosed; But those of ordinary skill in the art will recognize, under the situation that does not break away from disclosed scope of the present invention and spirit by appending claims, various improvement, increase and replacement are possible.
Claims (14)
1. method of judging a lithographic results in the semiconductor lithography production technology is characterized in that may further comprise the steps:
A. place four groups of different resolution charts on four summits of the shot of reticle, wherein every group of resolution chart comprises an alignment housing, an alignment inside casing; One group of outside rotating vernier; One group of inboard rotating vernier, a benchmark rotating vernier, a shot initial point mark;
B. through the mode of step and repeat exposure, duplicate same shot at disk, other three summits of the correspondence of the summit of each shot and adjacent three shot coincide, and form required detection resolution chart;
C. according to the technological specification demand of different product; Through overlay mark in test under microscope alignment housing and the formation of alignment inside casing; Or measure said overlay mark through the alignment testing apparatus; And, check a photoetching through read the reading of outside rotating vernier and inboard rotating vernier at microscopically.
2. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 1, it is characterized in that: said reticle also is provided with scribe line in the shot periphery, and the size of scribe line is greater than the size of resolution chart.
3. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 2, it is characterized in that: said resolution chart is outside shot lateral dimension and vertical dimension.
4. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 1 is characterized in that: the resolution chart on four summits all is details in a play not acted out on stage, but told through dialogues, and promptly exposure imaging is once separately.
5. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 1 is characterized in that: said overlay mark adopts the overlapping mode of rotation.
6. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 5 is characterized in that: said benchmark rotating vernier is stacked by an outside rotating vernier and an inboard rotating vernier and forms.
7. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 6 is characterized in that: said benchmark rotating vernier and one group of outside rotating vernier link together.
8. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 7; It is characterized in that: the alignment housing is in order to superimposed with the alignment inside casing at adjacent vertex place in the resolution chart on four summits of shot; Outside rotating vernier is in order to superimposed with the inboard rotating vernier at adjacent vertex place, and the shot initial point mark of adjacent vertex coincides together.
9. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 8 is characterized in that: shot initial point mark is positioned at the centermost that detects resolution chart, and is symmetric figure.
10. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 9 is characterized in that: the figure of shot initial point mark must be able to be identified under the optical mode of ESEM commonly used, and typical sizes is at 10 microns.
11. the method for a lithographic results in the judgement semiconductor lithography production technology as claimed in claim 10 is characterized in that: the Figure recognition when shot initial point mark is worked out as the process of measurement of production line testing apparatus.
12. method like a lithographic results in each described judgement semiconductor lithography production technology in the claim 1 to 11; It is characterized in that: the overlay mark that detects resolution chart can adopt box-in-box; Bar-in-bar, box-in-bar mark supply the test of alignment tester.
13. the method like a lithographic results in each described judgement semiconductor lithography production technology in the claim 1 to 11 is characterized in that: the overlay mark that detects resolution chart can be placed each litho machine measurement alignment of the specific resolution chart confession of all types of litho machines.
14. method like a lithographic results in each described judgement semiconductor lithography production technology in the claim 1 to 11; It is characterized in that: the overlay mark that detects resolution chart can be placed the strip lines of ad hoc structure, measures the mode of adjacent lines centre distance through ESEM and judges alignment numerical value.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105780533A CN102540732A (en) | 2010-12-08 | 2010-12-08 | Method for judging one-time photoetching result during semiconductor production |
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| CN2010105780533A CN102540732A (en) | 2010-12-08 | 2010-12-08 | Method for judging one-time photoetching result during semiconductor production |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103969942A (en) * | 2014-05-04 | 2014-08-06 | 湘能华磊光电股份有限公司 | Integrated photoetching plate manufacturing method and sorting method for manufactured LED (light emitting diode) chip crystalline grains |
| CN106094425A (en) * | 2016-06-16 | 2016-11-09 | 聚灿光电科技股份有限公司 | Photolithography mask structure and LED chip are sorted into the method for Bin |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0444307A (en) * | 1990-06-12 | 1992-02-14 | Nec Corp | Manufacture of semiconductor device |
| JPH09115827A (en) * | 1995-10-05 | 1997-05-02 | Samsung Electron Co Ltd | Reticle for processing semiconductor device |
| CN1329357A (en) * | 2000-06-08 | 2002-01-02 | 株式会社东芝 | Aligning method, alignment checking method and photomask |
| CN101435998A (en) * | 2007-11-15 | 2009-05-20 | 上海华虹Nec电子有限公司 | Method for reducing photolithography aligning partial difference caused by photoetching machine lens distortion |
| CN101592869A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Exposure equipment focal distance monitoring method |
-
2010
- 2010-12-08 CN CN2010105780533A patent/CN102540732A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0444307A (en) * | 1990-06-12 | 1992-02-14 | Nec Corp | Manufacture of semiconductor device |
| JPH09115827A (en) * | 1995-10-05 | 1997-05-02 | Samsung Electron Co Ltd | Reticle for processing semiconductor device |
| US5733690A (en) * | 1995-10-05 | 1998-03-31 | Samsung Electronics Co., Ltd. | Reticle for fabricating semiconductor device |
| CN1329357A (en) * | 2000-06-08 | 2002-01-02 | 株式会社东芝 | Aligning method, alignment checking method and photomask |
| CN101435998A (en) * | 2007-11-15 | 2009-05-20 | 上海华虹Nec电子有限公司 | Method for reducing photolithography aligning partial difference caused by photoetching machine lens distortion |
| CN101592869A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Exposure equipment focal distance monitoring method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103969942A (en) * | 2014-05-04 | 2014-08-06 | 湘能华磊光电股份有限公司 | Integrated photoetching plate manufacturing method and sorting method for manufactured LED (light emitting diode) chip crystalline grains |
| CN103969942B (en) * | 2014-05-04 | 2017-08-25 | 湘能华磊光电股份有限公司 | The method for separating of the mechanical preparation method of integrating optical and LED chip crystal grain |
| CN106094425A (en) * | 2016-06-16 | 2016-11-09 | 聚灿光电科技股份有限公司 | Photolithography mask structure and LED chip are sorted into the method for Bin |
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Application publication date: 20120704 |