CN101727012A - Method for detecting exposure stepping precision of current layer - Google Patents
Method for detecting exposure stepping precision of current layer Download PDFInfo
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- CN101727012A CN101727012A CN200810043869A CN200810043869A CN101727012A CN 101727012 A CN101727012 A CN 101727012A CN 200810043869 A CN200810043869 A CN 200810043869A CN 200810043869 A CN200810043869 A CN 200810043869A CN 101727012 A CN101727012 A CN 101727012A
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Abstract
The invention discloses a method for detecting the exposure stepping precision of a current layer, comprising the following steps of: (1) placing calibrating pictures in repeated exposure units, calibrating the precision of a light shield platform and an exposure platform, and exposing and developing by a photoetching machine; (2) calibrating the photoetching machine after developing to obtain the position of each repeated unit on a silicon sheet after exposure; (3) judging whether to conform to a stepping precision requirement or not by the position of each repeated unit obtained in the step (3); and (4) judging inconformity if not conforming to the stepping precision requirement, repeating the step (1), and judging conformity if conforming to the stepping precision requirement. The method can be used for realizing automatic detection on the exposure stepping precision of the current layer, reducing the process steps, enhancing the automation degree and reducing the product cost.
Description
Technical field
The present invention relates to a kind of photoetching in semiconductor manufacture process.
Background technology
In semiconductor is made, can after the first time, photoetching was finished, can carry out the inspection of litho machine stepping accuracy usually, its processing step flow process such as Fig. 2 are represented, and its inspection method such as Fig. 3 are represented, adopt vernier method to carry out.Its objective is whether inspection exists the unusual exposure figure represented as Fig. 1.Its purpose mainly contains following:
1. the demand that encapsulates scribing at last requires each repetitive stepping accuracy to meet the Capability Requirement of scribing process.
2. follow-up Alignment Process requires each repetitive stepping accuracy of ground floor to meet the Capability Requirement of Alignment Process.
3. subsequent examination step (lithography alignment accuracy checking, critical size is measured, film thickness measuring, electric performance test or the like) requires each repetitive stepping accuracy to meet the Capability Requirement of technology.
In the existing technology,, whether overlap by the vernier of the detection method detection adjacent cells of macroscopic view or microcosmic by operating personnel on the line by producing the vernier figure of some alignings around each repetitive.Utilize this method, can't realize automatic detection, need to rely on operating personnel's ability, both can't in actual production, avoid human error, simultaneously because increased processing step, need extra equipment and human input, the production cycle of product and production cost are increased, be unfavorable for manufacturing enterprise's control production cost.
Summary of the invention
Technical matters to be solved by this invention provides the method for detecting exposure stepping precision of current layer, can realize automatically detecting, and reduces processing step, improves automaticity, reduces cost of products.
In order to solve above technical matters, the invention provides a kind of method of detecting exposure stepping precision of current layer, may further comprise the steps: step 1, in the repeated exposure unit, place alignment patterns, light shield platform and the calibration of exposure stage precision, photo-etching machine exposal develops; Step 2, develop finish after, carry out a litho machine again and aim at, obtain exposing finish after the position of each repetitive on silicon chip; Step 3, by the position of each repetitive of obtaining in the step 2, judge whether to meet the demand of stepping accuracy; Step 4, as not meeting the demand of stepping accuracy, then judge defective, repeating step one; As meet the demand of stepping accuracy, it is qualified then to judge.
The present invention can realize the automatic detection to exposure stepping precision of current layer, reduces processing step, improves automaticity, reduces cost of products.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is existing exposure schematic flow sheet;
Fig. 2 is existing photolithography process figure;
Fig. 3 is existing macroscopical vernier inspection method synoptic diagram;
Fig. 4 is that the embodiment of the invention utilizes the lithography alignment method to carry out the synoptic diagram that stepping accuracy is checked;
Fig. 5 is a process chart of the present invention.
Embodiment
At first in each repeated exposure unit, place alignment patterns (search of Nikon system, LSA, FIA, LIA etc., the XPM of ASML system, SPM, Athena etc., usually for the first time the figure of photoetching all can be placed) or used measurement pattern when being used for the litho machine daily servicing and checking alignment system precision or lens distortion, then after finishing when the anterior layer exposure imaging, by once extra alignment procedures, utilize these resolution charts can obtain the relative position of each repetitive on silicon slice platform, can detect then and whether meet the requirements.
An example represented as Fig. 4, two repetitives on the normal same Y direction, the X position of the measurement pattern that it is fixing should not departed from far, as the left figure expression of Fig. 4; If the X position that measures differs greatly, stepping accuracy was undesirable when then explanation exposed, and is represented as Fig. 4.At this moment exposure again needs to do over again.
As shown in Figure 5, present embodiment provides a kind of method of detecting exposure stepping precision of current layer, may further comprise the steps: step 1 is placed alignment patterns in each repeated exposure unit, light shield platform and the calibration of exposure stage precision, and photo-etching machine exposal develops; Step 2, develop finish after, carry out a litho machine again and aim at, obtain exposing finish after the position of each repetitive on silicon chip; Step 3, by the position of each repetitive of obtaining in the step 2, judge whether to meet the demand of stepping accuracy; Step 4, as not meeting the demand of stepping accuracy, then judge defective, repeating step one; As meet the demand of stepping accuracy, it is qualified then to judge.
Step 4 judge defective after, can append a step: measure critical size, judge whether critical size qualified,, and then do over again if defective then adjust conditions of exposure.In step 2, can carry out the position measurement of each repetitive by the alignment system of litho machine itself.The employed measurement pattern of present embodiment is that the standard alignment patterns or the litho machine of litho machine carries out checking in the daily servicing that litho machine is aimed at and the resolution chart of camera lens distortion.Stepping accuracy inspection when the present invention not only can be applied to photoetching for the first time also can be applied to need in the follow-up lithography step to carry out the lithographic process steps that stepping accuracy is checked.
Claims (4)
1. the method for a detecting exposure stepping precision of current layer is characterized in that, may further comprise the steps:
Step 1, in the repeated exposure unit, place alignment patterns, light shield platform and the calibration of exposure stage precision, photo-etching machine exposal develops;
Step 2, develop finish after, carry out a litho machine again and aim at, measuring exposure finish after the position of each repetitive on silicon chip;
Step 3, by the position of each repetitive of obtaining in the step 2, judge whether to meet the demand of stepping accuracy;
Step 4, as not meeting the demand of stepping accuracy, then judge defective, repeating step one; As meet the demand of stepping accuracy, it is qualified then to judge.
2. the method for detecting exposure stepping precision of current layer as claimed in claim 1 is characterized in that, step 4 judge defective after, measure critical size, judge whether critical size qualified, if defective then adjust conditions of exposure.
3. the method for detecting exposure stepping precision of current layer as claimed in claim 1 is characterized in that, when measuring the position of each repetitive on silicon chip, carries out the position measurement of each repetitive by the alignment system of litho machine itself.
4. the method for detecting exposure stepping precision of current layer as claimed in claim 3, it is characterized in that, when measuring the position of each repetitive on silicon chip, employed measurement pattern is that the standard alignment patterns or the litho machine of litho machine carries out checking in the daily servicing resolution chart that litho machine is aimed at and camera lens is out of shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810043869A CN101727012A (en) | 2008-10-28 | 2008-10-28 | Method for detecting exposure stepping precision of current layer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810043869A CN101727012A (en) | 2008-10-28 | 2008-10-28 | Method for detecting exposure stepping precision of current layer |
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| CN101727012A true CN101727012A (en) | 2010-06-09 |
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| CN200810043869A Pending CN101727012A (en) | 2008-10-28 | 2008-10-28 | Method for detecting exposure stepping precision of current layer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102591135A (en) * | 2011-10-12 | 2012-07-18 | 上海华力微电子有限公司 | Monitoring method for graphic changes caused by lens heating during continuous exposure |
| CN102929111A (en) * | 2011-08-10 | 2013-02-13 | 无锡华润上华科技有限公司 | Developed photoresist layer aligning detection method |
| CN105093815A (en) * | 2014-05-21 | 2015-11-25 | 北大方正集团有限公司 | Extraction method for device design size |
-
2008
- 2008-10-28 CN CN200810043869A patent/CN101727012A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102929111A (en) * | 2011-08-10 | 2013-02-13 | 无锡华润上华科技有限公司 | Developed photoresist layer aligning detection method |
| CN102929111B (en) * | 2011-08-10 | 2016-01-20 | 无锡华润上华科技有限公司 | The aligning detection method of the photoresist layer after a kind of development |
| CN102591135A (en) * | 2011-10-12 | 2012-07-18 | 上海华力微电子有限公司 | Monitoring method for graphic changes caused by lens heating during continuous exposure |
| CN105093815A (en) * | 2014-05-21 | 2015-11-25 | 北大方正集团有限公司 | Extraction method for device design size |
| CN105093815B (en) * | 2014-05-21 | 2019-10-15 | 北大方正集团有限公司 | The extracting method of device design size |
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Open date: 20100609 |