CN102566322A - Multiple photoetching equipment correcting method - Google Patents
Multiple photoetching equipment correcting method Download PDFInfo
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- CN102566322A CN102566322A CN2012100473913A CN201210047391A CN102566322A CN 102566322 A CN102566322 A CN 102566322A CN 2012100473913 A CN2012100473913 A CN 2012100473913A CN 201210047391 A CN201210047391 A CN 201210047391A CN 102566322 A CN102566322 A CN 102566322A
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Abstract
The invention provides a multiple photoetching equipment correcting method, which comprises the following steps: a step 1 of exposing a standard silicon wafer on a standard photo mask by a standard lithography machine, and integrating detection graphs on the standard photo mask; a step 2 of measuring the sizes of the detection graphs on the standard photo mask, obtaining size reference data of the standard lithography machine, measuring the varieties and the number of defects on the standard silicon wafer, and obtaining defect reference data of the standard lithography machine; a step 3 of exposing to-be-corrected silicon wafers on to-be-corrected lithography machines by the standard photo mask; a step 4 of measuring size data of the detection graphs on the to-be-corrected silicon wafers, obtaining size data of the to-be-corrected lithography machines, measuring the varieties and the number of the to-be-corrected silicon wafers and obtaining defect data of the to-be-corrected lithography machines; and a step 5 of comparing the size reference data of the standard lithography machine with the size data of the to-be-corrected lithography machines, comparing the defect reference data of the standard lithography machine with the defect data of the to-be-corrected lithography machines and regulating the to-be-corrected lithography machines according to a data comparison result.
Description
Technical field
The present invention relates to a kind of semiconductor microelectronics process equipment, relate in particular to a kind of bearing calibration to many litho machines.
Background technology
When at product of volume production, many photoetching units (litho machine+coating developing machine) that semiconductor factory will be furnished with two and above same model carry out the production of same process layer.Because every litho machine is in full accord to not accomplishing with the size of one deck, this just needs adjustment exposure parameter NA and sigma.
At present, use the adjustment that a lot of wafer are carried out exposure parameter in general the application, the corresponding parameter of a wafer is made public then and is measured.Use the special test mask plate to carry out the graphic defects ability again and detect, Different products repeats identical work again, and the expense that this has just caused a large amount of silicon chips has increased slip-stick artist's workload, wastes time and energy, and cost is also higher.
Summary of the invention
The present invention provides a kind of easy bearing calibration in order to solve the problem that exists in many lithographic equipments of present correction, utilizes correction mask plate and minor amount of silicon board test to reach the purpose of mating different photoetching units, and is both time saving and energy saving, practices thrift cost again.
To achieve these goals, a kind of many lithographic equipment bearing calibrations are provided, this method may further comprise the steps:
Step 1: with the standard mask plate with standard litho machine exposure standard silicon chip, integrated test pattern on the said standard mask plate.
Step 2: the size of test pattern on the measurement standard mask plate, and draw the size datum data of standard litho machine; The kind of defective and quantity on the measurement standard silicon chip, and draw the defective reference data of standard litho machine.
Step 3: with the standard mask plate silicon chip to be corrected that on litho machine to be corrected, makes public.
Step 4: measure the dimensional data of test pattern on the silicon chip to be corrected, and draw the dimensional data of litho machine to be corrected, measure the kind and the quantity of defective on the silicon chip to be corrected, and draw the defective data of litho machine to be corrected.
Step 5: the size master data of standard of comparison litho machine and litho machine to be corrected and dimensional data, defective reference data and defective data, adjust litho machine to be corrected according to the data comparative result.
Above-mentioned many lithographic equipment bearing calibrations are provided, wherein said test pattern comprises linearity test figure, polarization effect detection figure, T shape X-Y scheme, defects detection figure.The mutual assembled arrangement of multiple difform test pattern can form multiple combine detection figure, is used to satisfy the correction of different lithographic equipments.
Above-mentioned many lithographic equipment bearing calibrations are provided, wherein said test pattern comprises one dimension figure, X-Y scheme, defects detection figure.The mutual assembled arrangement of multiple difform test pattern can form multiple combine detection figure, is used to satisfy the correction of different lithographic equipments.
Above-mentioned many lithographic equipment bearing calibrations are provided, wherein said defective reference data and defective data comprise exposure parameter NA, Sigma.Exposure parameter NA and Sigma proofread and correct lithographic equipment main reference data, in trimming process, when exposure parameter NA and Sigma match, can think and accomplish correction.
Many lithographic equipment bearing calibrations provided by the invention through a spot of test mask plate and silicon test, reach the purpose of the different photoetching unit of coupling; Reduced producing cost; Equipment uses and the working time, makes different photoetching units reach coupling, guarantees the consistance of product quality.
Description of drawings
Fig. 1 is that the silicon chip that different exposure parameters are arranged is used in the exposure back among the present invention.
Fig. 2 (A) ~ (F) is used to the various test pattern of proofreading and correct on the mask plate among the present invention.
Fig. 3 is an exposure parameter curve map in the embodiment of the invention.
Embodiment
The present invention provides a kind of many lithographic equipment bearing calibrations, may further comprise the steps: step 1: with the standard mask plate with standard litho machine exposure standard silicon chip, integrated test pattern on the said standard mask plate.Step 2: the size of test pattern on the measurement standard mask plate, and draw the size datum data of standard litho machine; The kind of defective and quantity on the measurement standard silicon chip, and draw the defective reference data of standard litho machine.Step 3: with the standard mask plate silicon chip to be corrected that on litho machine to be corrected, makes public.Step 4: measure the dimensional data of test pattern on the silicon chip to be corrected, and draw the dimensional data of litho machine to be corrected, measure the kind and the quantity of defective on the silicon chip to be corrected, and draw the defective data of litho machine to be corrected.Step 5: the size master data of standard of comparison litho machine and litho machine to be corrected and dimensional data, defective reference data and defective data, adjust litho machine to be corrected according to the data comparative result.
Below provide many lithographic equipment bearing calibrations to elaborate through embodiment to the present invention so that better understand the content of the invention, but the embodiment of the invention does not limit the protection domain of the invention.
Making a standard mask plate, the test pattern of integrated graphics shown in Fig. 2 (A) ~ Fig. 2 (F) on the standard mask plate earlier.Fig. 2 (A) is Line proximity, and Fig. 2 (B) is space proximity, and Fig. 2 (C) is that defective is identified figure, L/S=1:1 wherein.Fig. 2 (D) is Line end linearity, and Fig. 2 (E) is ISO line linearity, and Fig. 2 (F) is a T shape X-Y scheme.
With standard silicon chip of the accurate photo-etching machine exposal of first station symbol, standard silicon chip is as shown in Figure 1 with the standard mask plate.In Fig. 1, grid is divided into several little square region on the standard silicon chip, and numbers respectively.The exposure parameter condition of digitized representation in the zone of band numbering (exposure shot), transformable condition sum can change according to the size of actual silicon chip.
The size of test pattern on the measurement standard mask plate, and draw the size datum data of standard litho machine.Measure the kind and the quantity situation of defective on the whole standard silicon chip, and draw the defective reference data of standard litho machine.
With the standard mask plate silicon chip to be corrected that on litho machine to be corrected, makes public.Measure the dimensional data of test pattern on the silicon chip to be corrected, and draw the dimensional data of litho machine to be corrected, measure the kind and the quantity of defective on the silicon chip to be corrected, and draw the defective data of litho machine to be corrected;
Through relatively from size master data and dimensional data, defective reference data and the defective data of standard litho machine and litho machine to be corrected; Adjust litho machine to be corrected; The exposure parameter curve that makes correction back equipment obtain exposure parameter curve and standard litho machine matches; Fig. 3 is by curve map that exposure parameter forms, and the exposure parameter NA that standard light is carved machine among the figure and Sigma and litho machine to be corrected are identical each other, so can think and accomplished correction.
The present invention is through integrated various figures on a slice mask plate, like 1D, and 2D and defects detection figure; Through exposed wafer on two litho machines; Measure these dimension of picture, detect defects count, select suitable exposure parameter NA and sigma then; The adjustment equipment state, the method that makes two photoetching units obtain mating.Through a test mask plate and minute quantity silicon test, reach the purpose of the different photoetching unit of coupling, time saving and energy saving, practice thrift cost.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (6)
1. one kind many lithographic equipment bearing calibrations is characterized in that, may further comprise the steps:
Step 1: with the standard mask plate with standard litho machine exposure standard silicon chip, integrated test pattern on the said standard mask plate;
Step 2: the size of test pattern on the measurement standard mask plate, and draw the size datum data of standard litho machine; The kind of defective and quantity on the measurement standard silicon chip, and draw the defective reference data of standard litho machine;
Step 3: with the standard mask plate silicon chip to be corrected that on litho machine to be corrected, makes public;
Step 4: measure the dimensional data of test pattern on the silicon chip to be corrected, and draw the dimensional data of litho machine to be corrected, measure the kind and the quantity of defective on the silicon chip to be corrected, and draw the defective data of litho machine to be corrected;
Step 5: the size master data of standard of comparison litho machine and litho machine to be corrected and dimensional data, defective reference data and defective data, adjust litho machine to be corrected according to the data comparative result.
2. method according to claim 1 is characterized in that, said test pattern comprises linearity test figure, polarization effect detection figure, T shape X-Y scheme, defects detection figure.
3. method according to claim 1 is characterized in that, said test pattern comprises one dimension figure, X-Y scheme, defects detection figure.
4. according to claim 2 or 3 described methods, it is characterized in that the mutual permutation and combination of said test pattern.
5. method according to claim 1 is characterized in that, said defective reference data comprises exposure parameter NA, sigma.
6. method according to claim 1 is characterized in that said defective data comprises exposure parameter NA, sigma.
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| CN201210047391.3A CN102566322B (en) | 2012-02-28 | 2012-02-28 | Multiple photoetching equipment correcting method |
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| CN201210047391.3A CN102566322B (en) | 2012-02-28 | 2012-02-28 | Multiple photoetching equipment correcting method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324025A (en) * | 2013-06-25 | 2013-09-25 | 北京京东方光电科技有限公司 | Mask plate and method for detecting exposure defects through mask plate |
| US9383640B2 (en) | 2013-06-25 | 2016-07-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | Mask plate and method for detecting exposure defects using the same |
| CN107608095A (en) * | 2017-08-29 | 2018-01-19 | 惠科股份有限公司 | The detection method and detection means of a kind of detection means |
| CN109491210A (en) * | 2017-09-12 | 2019-03-19 | Imec 非营利协会 | A method of for detecting the defect of photoengraving pattern |
| CN113257700A (en) * | 2021-04-30 | 2021-08-13 | 上海新昇半导体科技有限公司 | Calibration method of hydrogen chloride high-temperature etching equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1763614A (en) * | 2004-10-18 | 2006-04-26 | 中华映管股份有限公司 | Exposure process |
| CN101295659A (en) * | 2007-04-29 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting defect of semiconductor device |
| CN101344721A (en) * | 2007-07-11 | 2009-01-14 | 上海宏力半导体制造有限公司 | Photo-etching method |
| CN101650534A (en) * | 2009-07-24 | 2010-02-17 | 上海宏力半导体制造有限公司 | Method for measuring focal plane uniformity of exposure machine |
-
2012
- 2012-02-28 CN CN201210047391.3A patent/CN102566322B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1763614A (en) * | 2004-10-18 | 2006-04-26 | 中华映管股份有限公司 | Exposure process |
| CN101295659A (en) * | 2007-04-29 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting defect of semiconductor device |
| CN101344721A (en) * | 2007-07-11 | 2009-01-14 | 上海宏力半导体制造有限公司 | Photo-etching method |
| CN101650534A (en) * | 2009-07-24 | 2010-02-17 | 上海宏力半导体制造有限公司 | Method for measuring focal plane uniformity of exposure machine |
Non-Patent Citations (1)
| Title |
|---|
| 陆梅君等: "偏离最佳条件的基于模型的光学邻近效应修正", 《半导体技术》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324025A (en) * | 2013-06-25 | 2013-09-25 | 北京京东方光电科技有限公司 | Mask plate and method for detecting exposure defects through mask plate |
| CN103324025B (en) * | 2013-06-25 | 2015-08-12 | 北京京东方光电科技有限公司 | Mask plate and apply its detect exposure defect method |
| US9383640B2 (en) | 2013-06-25 | 2016-07-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | Mask plate and method for detecting exposure defects using the same |
| CN107608095A (en) * | 2017-08-29 | 2018-01-19 | 惠科股份有限公司 | The detection method and detection means of a kind of detection means |
| CN109491210A (en) * | 2017-09-12 | 2019-03-19 | Imec 非营利协会 | A method of for detecting the defect of photoengraving pattern |
| CN109491210B (en) * | 2017-09-12 | 2021-07-23 | Imec 非营利协会 | Method and system for detecting defects of photoetching pattern |
| CN113257700A (en) * | 2021-04-30 | 2021-08-13 | 上海新昇半导体科技有限公司 | Calibration method of hydrogen chloride high-temperature etching equipment |
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| CN102566322B (en) | 2014-05-28 |
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