CN101583234A - 感应耦合等离子体处理装置 - Google Patents

感应耦合等离子体处理装置 Download PDF

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Publication number
CN101583234A
CN101583234A CNA2009101386817A CN200910138681A CN101583234A CN 101583234 A CN101583234 A CN 101583234A CN A2009101386817 A CNA2009101386817 A CN A2009101386817A CN 200910138681 A CN200910138681 A CN 200910138681A CN 101583234 A CN101583234 A CN 101583234A
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CN
China
Prior art keywords
antenna
antenna part
plasma processing
inductive couple
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2009101386817A
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English (en)
Chinese (zh)
Inventor
齐藤均
佐藤亮
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101583234A publication Critical patent/CN101583234A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • H01Q1/366—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using an ionized gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CNA2009101386817A 2008-05-14 2009-05-14 感应耦合等离子体处理装置 Pending CN101583234A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008127166 2008-05-14
JP2008127166A JP5551343B2 (ja) 2008-05-14 2008-05-14 誘導結合プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2012102019234A Division CN102724803A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置

Publications (1)

Publication Number Publication Date
CN101583234A true CN101583234A (zh) 2009-11-18

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Family Applications (2)

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CNA2009101386817A Pending CN101583234A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置
CN2012102019234A Pending CN102724803A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置

Family Applications After (1)

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CN2012102019234A Pending CN102724803A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置

Country Status (4)

Country Link
JP (1) JP5551343B2 (ja)
KR (2) KR101124754B1 (ja)
CN (2) CN101583234A (ja)
TW (1) TWI475931B (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102115879A (zh) * 2009-12-31 2011-07-06 丽佳达普株式会社 基板处理装置
CN102280338A (zh) * 2010-06-07 2011-12-14 东京毅力科创株式会社 等离子体处理装置及其电介质窗结构
CN102438390A (zh) * 2010-09-06 2012-05-02 东京毅力科创株式会社 天线单元和感应耦合等离子体处理装置
CN102737941A (zh) * 2011-03-29 2012-10-17 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN102742365A (zh) * 2010-01-29 2012-10-17 应用材料公司 用于等离子体处理设备的前馈温度控制
CN102821534A (zh) * 2011-06-08 2012-12-12 东京毅力科创株式会社 电感耦合等离子用天线单元以及电感耦合等离子处理装置
CN103037612A (zh) * 2011-09-30 2013-04-10 东京毅力科创株式会社 电感耦合等离子体用天线单元和电感耦合等离子体处理装置
CN103247510A (zh) * 2012-02-07 2013-08-14 东京毅力科创株式会社 感应耦合等离子体处理方法和感应耦合等离子体处理装置
CN103917037A (zh) * 2012-12-28 2014-07-09 丽佳达普株式会社 电感耦合等离子体处理装置
CN104994676A (zh) * 2011-03-30 2015-10-21 东京毅力科创株式会社 等离子体处理装置
US9214315B2 (en) 2010-01-29 2015-12-15 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
CN105632860A (zh) * 2014-10-31 2016-06-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体加工设备
US9639097B2 (en) 2010-05-27 2017-05-02 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller

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* Cited by examiner, † Cited by third party
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KR101532747B1 (ko) * 2009-12-29 2015-06-30 주식회사 원익아이피에스 플라즈마 발생장치
JP5851682B2 (ja) 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5894785B2 (ja) * 2011-12-19 2016-03-30 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
JP6010305B2 (ja) * 2012-02-07 2016-10-19 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニット、誘導結合プラズマ処理装置および誘導結合プラズマ処理方法
KR101619899B1 (ko) 2014-07-25 2016-05-12 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
JP6062461B2 (ja) * 2015-01-30 2017-01-18 東京エレクトロン株式会社 プラズマ処理装置
JP6097317B2 (ja) * 2015-01-30 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法
KR102055371B1 (ko) * 2019-02-01 2019-12-13 주식회사 원익아이피에스 유도결합 플라즈마 처리장치
CN110047748B (zh) * 2019-04-22 2022-03-04 江南大学 一种低损伤AlGaN/GaNHEMT栅槽刻蚀方法
KR102041518B1 (ko) * 2019-07-18 2019-11-06 에이피티씨 주식회사 분리형 플라즈마 소스 코일 및 이의 제어 방법
JP7403348B2 (ja) * 2020-02-21 2023-12-22 東京エレクトロン株式会社 アンテナセグメント及び誘導結合プラズマ処理装置

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP3371176B2 (ja) * 1995-01-25 2003-01-27 ソニー株式会社 プラズマ処理装置および半導体装置の製造方法
KR100290813B1 (ko) * 1995-08-17 2001-06-01 히가시 데쓰로 플라스마 처리장치
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
EP1301938A2 (en) * 2000-07-06 2003-04-16 Applied Materials, Inc. A plasma reactor having a symmetric parallel conductor coil antenna
KR100440736B1 (ko) * 2001-02-19 2004-07-15 오범환 동축 병렬 안테나형 플라즈마 소스의 국소 인덕턴스직접조절 장치 및 방법
JP3462865B2 (ja) * 2001-07-10 2003-11-05 三菱重工業株式会社 給電アンテナ及び半導体製造装置
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
JP3880864B2 (ja) * 2002-02-05 2007-02-14 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP2003234338A (ja) * 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置
JP2004356511A (ja) * 2003-05-30 2004-12-16 Tokyo Electron Ltd プラズマ処理装置
JP2006221852A (ja) * 2005-02-08 2006-08-24 Canon Anelva Corp 誘導結合型プラズマ発生装置
JP2007311182A (ja) * 2006-05-18 2007-11-29 Tokyo Electron Ltd 誘導結合プラズマ処理装置およびプラズマ処理方法

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102115879B (zh) * 2009-12-31 2013-06-26 丽佳达普株式会社 基板处理装置
CN102115879A (zh) * 2009-12-31 2011-07-06 丽佳达普株式会社 基板处理装置
CN102742365A (zh) * 2010-01-29 2012-10-17 应用材料公司 用于等离子体处理设备的前馈温度控制
CN102742365B (zh) * 2010-01-29 2016-08-03 应用材料公司 用于等离子体处理设备的前馈温度控制
US10854425B2 (en) 2010-01-29 2020-12-01 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US9214315B2 (en) 2010-01-29 2015-12-15 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9639097B2 (en) 2010-05-27 2017-05-02 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
CN102280338A (zh) * 2010-06-07 2011-12-14 东京毅力科创株式会社 等离子体处理装置及其电介质窗结构
CN102280338B (zh) * 2010-06-07 2014-03-19 东京毅力科创株式会社 等离子体处理装置及其电介质窗结构
CN102438390B (zh) * 2010-09-06 2015-11-25 东京毅力科创株式会社 天线单元和感应耦合等离子体处理装置
CN102438390A (zh) * 2010-09-06 2012-05-02 东京毅力科创株式会社 天线单元和感应耦合等离子体处理装置
US9953811B2 (en) 2011-03-29 2018-04-24 Tokyo Electron Limited Plasma processing method
CN102737941B (zh) * 2011-03-29 2015-06-03 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN102737941A (zh) * 2011-03-29 2012-10-17 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN104994676A (zh) * 2011-03-30 2015-10-21 东京毅力科创株式会社 等离子体处理装置
US10020167B2 (en) 2011-03-30 2018-07-10 Tokyo Electron Limited Plasma processing apparatus
CN102821534B (zh) * 2011-06-08 2015-08-05 东京毅力科创株式会社 电感耦合等离子用天线单元以及电感耦合等离子处理装置
CN102821534A (zh) * 2011-06-08 2012-12-12 东京毅力科创株式会社 电感耦合等离子用天线单元以及电感耦合等离子处理装置
CN103037612A (zh) * 2011-09-30 2013-04-10 东京毅力科创株式会社 电感耦合等离子体用天线单元和电感耦合等离子体处理装置
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
US10928145B2 (en) 2011-10-27 2021-02-23 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
CN103247510B (zh) * 2012-02-07 2017-04-12 东京毅力科创株式会社 感应耦合等离子体处理方法和感应耦合等离子体处理装置
CN103247510A (zh) * 2012-02-07 2013-08-14 东京毅力科创株式会社 感应耦合等离子体处理方法和感应耦合等离子体处理装置
CN103917037B (zh) * 2012-12-28 2016-10-12 丽佳达普株式会社 电感耦合等离子体处理装置
CN103917037A (zh) * 2012-12-28 2014-07-09 丽佳达普株式会社 电感耦合等离子体处理装置
CN105632860A (zh) * 2014-10-31 2016-06-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体加工设备

Also Published As

Publication number Publication date
TW201008400A (en) 2010-02-16
CN102724803A (zh) 2012-10-10
KR20110010657A (ko) 2011-02-01
KR101446378B1 (ko) 2014-10-01
JP5551343B2 (ja) 2014-07-16
TWI475931B (zh) 2015-03-01
KR20090118839A (ko) 2009-11-18
KR101124754B1 (ko) 2012-03-23
JP2009277859A (ja) 2009-11-26

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Application publication date: 20091118