CN101583234A - Inductive couple plasma processing device - Google Patents
Inductive couple plasma processing device Download PDFInfo
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- CN101583234A CN101583234A CNA2009101386817A CN200910138681A CN101583234A CN 101583234 A CN101583234 A CN 101583234A CN A2009101386817 A CNA2009101386817 A CN A2009101386817A CN 200910138681 A CN200910138681 A CN 200910138681A CN 101583234 A CN101583234 A CN 101583234A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
- H01Q1/366—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using an ionized gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
Abstract
The present invention provides an inductive couple plasma processing device capable of obtaining a uniform plasma distribution even to a large substrate. The inductive couple plasma is provided with a high-frequency antenna 13 separated by a dielectric wall 2 in the upper side of a processing chamber 4, and the high-frequency antenna 13 comprises an external side antenna part 13a mainly forming an induced field in the external side part, an internal side antenna part 13b mainly forming an induced field in the internal side part, and a middle antenna part 13c for forming an induced field between the external side part and the internal side part, and variable capacitors 21a, 21c for controlling the plasma density distribution of a inductive couple plasma are respectively connected with the external side antenna part 13a and the middle antenna part 13c. Each antenna part forms a helical multiple-antenna, furthermore, in the configuration area, a winding method is set according to a mode of forming a uniform electric field, and the winding number is set according to a mode of realizing uniformization of the electric field in the configuration area of each antenna.
Description
Technical field
The present invention relates to the handled object that the flat-panel monitor (FPD) of liquid crystal indicator (LCD) etc. is made the substrate etc. of usefulness is implemented the inductive couple plasma processing device of plasma treatment.
Background technology
In the manufacturing process of liquid crystal indicator (LCD) etc.,, use various plasma processing apparatus such as plasma-etching apparatus or plasma CVD film formation device for glass substrate is implemented predetermined process.As this plasma processing apparatus, used the capacitance coupling plasma processing unit in the past mostly, but, have inductively coupled plasma (Inductively CoupledPlasma:ICP) processing unit that can access condition of high vacuum degree, this big advantage of highdensity plasma recently and receive publicity.
Inductive couple plasma processing device, outside configuring high-frequency antenna at the dielectric window of the container handling of accommodating handled object, by supply processing gas in container handling and to this high frequency antenna supply high frequency electric power, make and produce inductively coupled plasma in the container handling, handled object is implemented the plasma treatment of regulation by this inductively coupled plasma.As the high frequency antenna of inductive couple plasma processing device, use the flat plane antenna that forms plane predetermined pattern mostly.
Like this, in the inductive couple plasma processing device that uses flat plane antenna, generate plasma in the space under the flat plane antenna in container handling, at this moment, because with the proportional distribution of electric field strength of each position under the antenna, so the pattern form of flat plane antenna becomes the key factor of decision plasma density distribution with high beta plasma density area and low plasma density area.
But an inductive couple plasma processing device should corresponding application be not limited to one, is necessary with a plurality of application corresponding.In this case, in using, handle uniformly, be necessary to change plasma density distribution at each.Therefore, prepare a plurality of difform antennas for the position that makes high-density region and density regions is different, change antenna corresponding to using.
But, prepare a plurality of antennas corresponding to a plurality of application programs, all change at each different application and need expend sizable labour, and because the glass substrate that LCD uses maximizes, the manufacturing expense of antenna is also very high recently.In addition, even prepare a plurality of antennas like this, also may not only condition in the application that is provided, must come corresponding according to the adjustment of processing conditions.
To this, disclose in the patent documentation 1, spiral-shaped antenna is divided into inside part and the setting of Outboard Sections two parts, antenna part at least one side is provided with impedance adjustment unit such as variable capacitor, by impedance adjustment based on this, control the current value of above-mentioned two antenna part, and be controlled at the technology of the density distribution of the inductively coupled plasma that forms in the process chamber.
In the technology of above-mentioned patent documentation 1, under the inside part of spiral-shaped antenna and the Outboard Sections, be formed with the plasma with the corresponding intensity of electric field that forms by antenna,, can control the density distribution of plasma equably by plasma diffusion in the horizontal direction.But, surpassing in the length on one side of substrate under 1 meter the situation of maximization, this diffusion effect can not fully play, and therefore reflects the dredging of antenna pattern, close distribution easily, so plasma distribution has the tendency of deterioration.And if substrate maximizes like this, electric-field intensity distribution produces difference in the antenna configurations zone, so the distribution of plasma just becomes inhomogeneous.
[patent documentation 1] spy opens the 2007-311182 communique
Summary of the invention
The present invention finishes in view of above-mentioned situation, even the purpose of this invention is to provide the inductive couple plasma processing device that also can access uniform plasma distribution for large substrate.
In order to solve above-mentioned problem, the invention provides a kind of inductive couple plasma processing device, it comprises: accommodate the process chamber that handled object is implemented plasma treatment; The mounting table of mounting handled object in above-mentioned process chamber; In above-mentioned process chamber, supply with the treating-gas supply system of handling gas; Gas extraction system to above-mentioned processing indoor gas; By dielectric members be configured in above-mentioned process chamber the outside, have the high frequency antenna that is set to concentric antenna part more than 3 that in above-mentioned process chamber, forms induction field by supply high frequency electric power; Comprise in the antenna circuit of above-mentioned each antenna part at least one impedance with adjusting, control the impedance adjustment unit of the current value of above-mentioned antenna part thus, above-mentioned each antenna part, constitute a plurality of antenna cables and be configured to spiral helicine multiple antenna, and, set its winding method at its configuring area according to the mode that forms uniform electric field, between the configuring area of each antenna part, set it in the mode that can realize electric field homogenizing and twine number.
In the present invention, handled object forms rectangular shape, and above-mentioned antenna part can constitute according to the mode that forms the essentially rectangular shape and dispose antenna cable.In this case, above-mentioned antenna part is preferably according to twining the form that mode that numbers lack is set winding method at the central portion on each limit of essentially rectangular shape than other parts.And, above-mentioned high frequency antenna, preferably the mode that tails off according to the antenna part antenna part winding number laterally from the inboard is set the winding number of each antenna part.
Above-mentioned impedance adjustment unit is connected with in the antenna circuit that comprises above-mentioned each antenna part at least one, can constitute the structure of the impedance of regulating this connected antenna circuit.In this case, above-mentioned impedance adjustment unit can have variable capacitance.And, can constitute the structure that also has control unit, it preestablishes the adjusting parameter of the above-mentioned impedance adjustment unit that can access the plasma density distribution that is suitable for each application most, when selecting the application of regulation, the mode that becomes predefined optimum value according to the adjusting parameter that makes the above-mentioned impedance adjustment unit corresponding with this application is controlled above-mentioned impedance adjustment unit.
According to the present invention, as the high frequency antenna that in process chamber, forms induction field, use has the antenna that is set to concentric antenna part more than 3, therefore, follow also to be difficult to produce inhomogeneous owing to the plasma that lowly causes of plasma density between each antenna part of maximization of substrate size even the size of substrate is large-scale.And, each antenna part constitutes a plurality of antenna cables and is configured to spiral helicine multiple antenna, and in its configuring area, set its winding method in the mode that forms uniform electric field, between the configuring area of each antenna part, set it and twine number in the mode that can realize electric field homogenizing, therefore, very difficultly follow the inhomogeneous of the uneven plasma of electric field strength.
Description of drawings
Fig. 1 is the profile of expression about the inductive couple plasma processing device of one embodiment of the present invention.
Fig. 2 is the plane graph of high frequency antenna that expression is used for the inductive couple plasma processing device of Fig. 1.
Fig. 3 is the figure of power supply circuits of the high frequency antenna of the expression inductive couple plasma processing device that is used for Fig. 1.
Fig. 4 is the plane graph of other examples of expression high frequency antenna.
Fig. 5 is the power supply circuit of the high frequency antenna of presentation graphs 4.
Symbol description
1 main body container
2 dielectric walls (dielectric members)
3 antenna chamber
4 process chambers
13 high frequency antennas
13a outside antenna part
The inboard antenna part of 13b
Antenna part in the middle of the 13c
14 adaptations
15 high frequency electric sources
16a, 16b, 16c power supply part
20 treating-gas supply systems
21a, the 21c variable capacitor
23 mounting tables
30 exhaust apparatus
50 control parts
51 user interfaces
52 storage parts
61a outside antenna circuit
The inboard antenna circuit of 61b
Antenna circuit in the middle of the 61c
The G substrate
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.Fig. 1 is the profile of the inductive couple plasma processing device of expression one embodiment of the present invention.Fig. 2 is the plane graph that expression is used for the high frequency antenna of this inductive couple plasma processing device.This device for example is used for the etching of metal film, ITO film, oxide-film etc. when FPD forms thin-film transistor on glass substrate, perhaps the ashing treatment of resist film.Here, as FPD, LCD (LCD), electroluminescence (Electro Luminescence have been expressed for example; EL) display, plasm display panel (PDP) etc.
This plasma processing unit, the airtight main body container 1 with the angle barrel shape that is constituted by the aluminium of anodized by conductive material, for example internal face.This main body container 1 can be assembled with decomposing, by earth connection 1a ground connection.Main body container 1 is divided into antenna chamber 3 and process chamber 4 up and down by dielectric walls 2.Therefore, dielectric walls 2 constitutes the ceiling wall of process chamber 4.Dielectric walls 2 is by Al
2O
3Deng formation such as pottery, quartz.
In the lower portion of dielectric walls 2, embed to have and handle the spray basket 11 that gas is supplied with usefulness.Spray basket 11 is configured to crosswise, constitutes the structure from following support dielectric walls 2.And, support the spray basket 11 of above-mentioned dielectric walls 2, be suspended on the ceiling of main body container 1 by a plurality of hooks (not having diagram).
This spray basket 11 is preferably metal, for example by in order not produce pollutant its inner face is constituted by the aluminium of anodized by conductive material.On this spray basket 11, be formed with the gas flow path 12 that horizontal direction is extended, be communicated with a plurality of gases that the extend hole 12a that spues downwards at this gas flow path 12.On the one hand, the central authorities at the upper surface of dielectric walls 2 are provided with gas supply pipe 20a in the mode that is communicated with this gas flow path 12.Gas supply pipe 20a connects to its outside from the ceiling of main body container 1, is connected with comprising the treating-gas supply system 20 of handling gas supply source and valve system etc.Therefore, in plasma treatment, the processing gas of supplying with from treating-gas supply system 20 is supplied in the spray basket 11 by gas supply pipe 20a, sprays in process chamber 4 from the gas supply hole 12a of its lower surface.
Between the sidewall 4a of the sidewall 3a of the antenna chamber 3 of main body container 1 and process chamber 4, be provided with outstanding to the inside bracing frame 5, upload at this bracing frame 5 and be equipped with dielectric walls 2.
In the antenna chamber 3, above dielectric walls 2, in the face of dielectric walls 2 is provided with high frequency (RF) antenna 13.This high frequency antenna 13 separates from dielectric walls 2 by the pad 17 that is made of insulating element.
Fig. 2 is the plane graph that schematically shows high frequency antenna 13.As shown in the drawing, high frequency antenna 13, by the outside antenna part 13a that closely disposes antenna cable at Outboard Sections, closely dispose the inboard antenna part 13b of antenna cable and closely dispose the middle antenna part 13c of antenna cable, dispose with one heart and constitute at their mid portion at inside part.Outside antenna part 13a, inboard antenna part 13b and middle antenna part 13c constitute the multiple antenna that helically is formed with a plurality of antenna cables.
Outside antenna part 13a places the whole mode of shape in the form of a substantially rectangular according to an angle of 90 degrees that 4 antenna cables are whenever staggered to dispose, and its central portion forms the space.In addition, power to each antenna cable by 4 terminal 22a.And for the voltage that changes antenna cable distributes, the outer end of each antenna cable is connected with the sidewall of antenna chamber 3 and ground connection by capacitor 18a.But, also can not pass through the direct ground connection of capacitor 18a, and,, for example also can insert capacitor at the part of terminal 22a, antenna cable midway at bend 100a.
In addition, be in the space of the central portion of outside antenna part 13a at inboard antenna part 13b, place the whole mode of shape in the form of a substantially rectangular according to an angle of 90 degrees that 4 antenna cables are whenever staggered and dispose.In addition, 4 terminal 22b by central authorities power to each antenna cable.And for the voltage that changes antenna cable distributes, the outer end of each antenna cable is connected ground connection (with reference to Fig. 1) by capacitor 18b with the upper wall of antenna chamber 3.But, also can not pass through the direct ground connection of capacitor 18b, and,, for example also can insert capacitor at the part of terminal 22b, antenna cable midway at bend 100b.
And, be formed with bigger space between the most inboard antenna cable of the outermost antenna cable of inboard antenna part 13b and outside antenna part 13a, in this space, be provided with above-mentioned middle antenna part 13c.Middle antenna part 13c places the whole mode of shape in the form of a substantially rectangular according to an angle of 90 degrees that 4 antenna cables are whenever staggered to dispose, and its central portion forms the space.Power to each antenna cable by 4 terminal 22c.And for the voltage that changes antenna cable distributes, the outer end of each antenna is connected ground connection (with reference to Fig. 1) by capacitor 18c with the upper wall of antenna chamber 3.But, also can not pass through the direct ground connection of capacitor 18c, and,, for example also can insert capacitor at the part of terminal 22c, antenna cable midway at bend 100c.
Between these outsides antenna part 13a, inboard antenna part 13b, the middle antenna part 13c, form the wide predetermined gap in antenna cable interval each other than each antenna part.
Outside antenna part 13a, inboard antenna part 13b, middle antenna part 13c are set configuration in the mode that forms uniform electric field strength at these configuring areas.Specifically, the central portion on each limit of the rectangle that constitutes at their is compared writhing number and is reduced with other parts.And outside antenna part 13a, inboard antenna part 13b, middle antenna part 13c are according to setting the winding number in the mode that these configuring areas form the homogenizing of electric field strength.Specifically, when helical form configuration antenna cable, generally along with the length of portable antenna cable laterally is elongated, it is big that electric field strength becomes, therefore, from the antenna part of inboard laterally the antenna part writhing number tail off.For example, in the central portion on each limit, inboard antenna part 13b is 4 volumes, and middle antenna part 13c is 3 volumes, and outside antenna part 13a is 2 volumes.
Near the central portion of antenna chamber 3, be provided with 4 second power supply part 16b of 4 first power supply part 16a of the power supply of antenna part 13a laterally, antenna part 13b power supply to the inside, and to 4 the 3rd power supply part 16c (any has all only shown 1 among Fig. 1) of middle antenna part 13c power supply.The lower end of each first power supply part 16a connects the terminal 22a of outside antenna part 13a, and the lower end of each second power supply part 16b connects the terminal 22b of inboard antenna part 13b, the terminal 22c of antenna part 13c in the middle of the lower end of each the 3rd power supply part 16c connects.These first power supply parts 16a, the second power supply part 16b and the 3rd power supply part 16c are connected in parallel by adaptation 14 and high frequency electric source 15.High frequency electric source 15 is connected supply lines 19 with adaptation 14, supply lines 19 is branched off into supply lines 19a, 19b and 19c at the downstream side of adaptation 14, supply lines 19a connects 4 first power supply part 16a, supply lines 19b connects 4 second power supply part 16b, and supply lines 19c connects 4 the 3rd power supply part 16c.
On supply lines 19a, insert variable capacitor 21a is installed, on supply lines 19c, insert variable capacitor 21c is installed, variable capacitor is not installed on supply lines 19b.And, constitute outside antenna circuit by variable capacitor 21a and outside antenna part 13a, antenna circuit in the middle of constituting by variable capacitor 21c and middle antenna part 13c.On the other hand, inboard antenna circuit only is made of inboard antenna part 13b.
As described later, by regulating the capacity of variable capacitor 21a, the impedance of control outside antenna circuit, by regulating the capacity of variable capacitor 21c, the impedance of antenna circuit in the middle of the control, by these control, can adjust the magnitude relationship of the electric current that flows through in outside antenna circuit, inboard antenna circuit and the middle antenna circuit.
In plasma treatment, the for example frequency of supplying with induction field formation usefulness to high frequency antenna 13 from high frequency electric source 15 is the High frequency power of 13.56MHz, like this, the high frequency antenna 13 that High frequency power is arranged by supply, form induction field in process chamber 4, the processing gas of supplying with from spray basket 11 by this induction field is by plasmaization.At this moment, the density distribution of plasma, Be Controlled by the impedance of variable capacitor 21a, 21b control outside antenna part 13a, inboard antenna part 13b and middle antenna part 13c.
Below in process chamber 4,, be provided with the mounting table 23 that is used for mounting LCD glass substrate according to clipping the relative mode of dielectric walls 2 and high frequency antenna 13.Mounting table 23, by conductive material, for example the surface constituted by the aluminium of anodized.The LCD glass substrate G of mounting is adsorbed maintenance by electrostatic chuck (not shown) on the mounting table 23.
Mounting table 23 is housed in the insulator frame 24, and is supported by the pillar 25 of hollow.Pillar 25 connects the bottom of main body container 1 when keeping the airtight conditions of bottom of main body container 1, be set at main body container 1 outer elevating mechanism (not shown) and support, and substrate G moves into when taking out of and drives mounting table 23 up and down by elevating mechanism.And, between the bottom of insulator frame 24 of accommodating mounting table 23 and main body container 1, be provided with the bellows 26 that surrounds pillar 25 airtightly, like this, even mounting table 23 moves up and down the air-tightness that also can guarantee in the container handling 4.And, on the sidewall 4a in process chamber 4, be provided with to be used to move into and take out of that moving into of substrate G taken out of mouthful 27a and the family of power and influence 27 of its switching.
On mounting table 23,, be connected with high frequency electric source 29 by adaptation 28 by being arranged on the supply lines 25a in the hollow leg 25.This high frequency electric source 29 in plasma treatment, applies the bias voltage High frequency power to mounting table 23, and for example frequency is the High frequency power of 3.2MHz.By the High frequency power that this bias voltage is used, the ion in the plasma that generates in the process chamber 4 is effectively introduced substrate G.
And, in the mounting table 23,, be provided with the temperature control device that constitutes by heating units such as ceramic heater, cold medium stream etc. for the temperature of control basal plate G, and temperature sensor (all not shown).Be directed to the pipe arrangement and the distribution of these mechanisms and parts, all export to the outside of main body container 1 by the pillar 25 of hollow.
Bottom at process chamber 4, be connected with the exhaust apparatus 30 that comprises vacuum pump etc. by blast pipe 31,, discharge the gas in the process chamber 4 by this exhaust apparatus 30, in plasma treatment, set and maintain in the process chamber 4 (for example 1.33Pa) in the specified vacuum atmosphere.
The rear side of the substrate G of mounting is formed with cooling space (not shown) on the mounting table 23, is provided with to be used to supply with helium (He) stream 41 of using the helium (He) of gas as the heat conduction of certain pressure.Like this, supply with heat conduction gas, can avoid the temperature of vacuum environment infrabasal plate G to rise and variations in temperature by rear side to substrate G.
Each formation portion of this plasma processing unit connects the control part 50 be made up of computer and Be Controlled.And, on control part 50, be connected with the user interface 51 that instructs the display screen etc. of operational situation of the keyboard of input operation etc. and visable representation plasma processing apparatus to form for the managing plasma processing unit by operating personnel.And, on control part 50, be connected with storage part 52, this storage part 52 accommodate by the control of control part 50 be implemented in the various processing of carrying out in the plasma processing apparatus control program, make each part of plasma processing apparatus carry out the program of handling, i.e. processing scheme according to treatment conditions.Processing scheme is stored in the storage medium in the storage part 52.Storage medium can be fixing media such as hard disk, also can be mobility media such as CDROM, DVD.And, also can install from other, for example suitably transmit processing scheme by special circuit.And, as required, carry out at control part 50 by accessing arbitrarily scheme from storage part 52 from the indication of user interface 51 etc., therefore, under the control of control part 50, can carry out treatment desired at plasma processing apparatus.
Then, the impedance Control to high frequency antenna 13 describes.Fig. 3 is the figure of the power supply circuits of expression high frequency antenna 13.As shown in the figure, the High frequency power from high frequency electric source 15 supplies to outside antenna circuit 61a, inboard antenna circuit 61b and middle antenna circuit 61c by adaptation 14.Here, because outside antenna circuit 61a is made of outside antenna part 13a and variable capacitor 21a, middle antenna circuit 61c is made of middle antenna circuit 13c and variable capacitor 21c, so the impedance Z of outside antenna circuit 61a
OutCan its volume change be changed by the position of regulating variable capacitor 21a; The impedance Z of middle antenna circuit 61c
MiddleCan its volume change be changed by the position of regulating variable capacitor 21c.On the other hand, inboard antenna circuit 61b only is made of inboard antenna part 13b, its impedance Z
InFix.At this moment, can make the electric current I of outside antenna circuit 61a
OutCorresponding to impedance Z
OutVariation and change the electric current I of antenna circuit 61c in the middle of can making
MiddleCorresponding to impedance Z
MiddleVariation and change.And, the electric current I of inboard antenna circuit 61b
InAccording to Z
Out, Z
MiddleAnd Z
InRate of change.Therefore, the capacity regulating by variable capacitor 21a, 21c changes Z
OutAnd Z
Middle, the electric current I of antenna circuit 61a outside can making thus
Out, inboard antenna circuit 61b electric current I
InElectric current I with middle antenna circuit 61c
MiddleChange freely.And, like this can by control flows cross outside antenna part 13a electric current, flow through the electric current of inboard antenna part 13b and flow through in the middle of the electric current of antenna part 13c control plasma density distribution.
Processing action when then, the inductive couple plasma processing device that constitutes as mentioned above about use is implemented the plasma ashing processing to LCD glass substrate G describes.
At first, when the family of power and influence 27 is opened state, from by transport mechanism (not shown) substrate G being moved in the process chamber 4 here, be positioned on the mounting surface of mounting table 23 after, by electrostatic chuck (not shown) substrate G is fixed on the mounting table 23.Secondly, processing gas from treating-gas supply system 20 is ejected in the process chamber 4 by the gas squit hole 12a that sprays basket 11, and utilize exhaust apparatus 30 through blast pipe 31 with process chamber 4 in vacuum exhaust, make and maintain for example pressure atmosphere about 0.66～26.6Pa in the process chamber.
In addition, at this moment in the cooling space of the rear side of substrate G, rise and variations in temperature, supply with as the helium (He) of heat conduction with gas by helium (He) stream 41 for fear of the temperature of substrate G.
Then, for example high frequency of 13.56MHz is applied to high frequency antenna 13, in process chamber 4, forms induction field by dielectric walls 2 thus from high frequency electric source 15.By the induction field of formation like this, in process chamber 4, will handle gaseous plasmaization, form highdensity inductively coupled plasma, utilize such plasma to carry out for example plasma ashing processing.
In this case, high frequency antenna 13, as mentioned above, be have Outboard Sections closely dispose antenna cable outside antenna part 13a, closely dispose the inboard antenna part 13b of antenna cable and the structure of middle antenna part 13c of configuration closely between them at inside part.Therefore, even the size of glass plate G is under the situation of the large substrate of 1 limit above 1 meter, also be difficult to produce the low uneven situation of plasma that causes owing to the plasma density between each antenna part.That is to say, record only is made of under the situation of high frequency antenna 13 outside antenna part and inboard antenna part in above-mentioned patent document 1, corresponding with the glass substrate G that surpasses 1 meter on one side, the words that high frequency antenna 13 is in statu quo enlarged, because the requirement that keeps plasma density is arranged the gap of dielectric walls 2 and mounting table 23 is not changed, therefore the interval between outside antenna part and the inboard antenna part enlarges, thereby it is low based on the uniformization effect of the diffusion of plasma, reflect the close of antenna pattern easily, the distribution of dredging, the distribution of plasma density worsens.But in the present embodiment, therefore antenna part 13c in the middle of being provided with between outside antenna part 13a and inboard antenna part 13b can avoid above-mentioned situation.
And, outside antenna part 13a, inboard antenna part 13b and middle antenna part 13c, under the situation that disposes antenna cable equably, the electric field strength in these configuring areas is inhomogeneous, and electric field strength is inhomogeneous between the configuring area of each antenna part.But, in the present embodiment, do one's utmost to avoid the uneven configuration mode of consequent electric field strength owing to adopted, be difficult to produce the inequality of the plasma of the inequality of following electric field strength.
Specifically, rectangular-shaped outside antenna part 13a, inboard antenna part 13b and middle antenna part 13c, the tendency that central portion on its each limit has electric field strength to uprise, but, because this part is compared the winding number with other parts few, therefore in the configuring area of each antenna part, can make electric field strength even.And, under the situation that constitutes spiral helicine antenna, along with moving laterally, the length of antenna cable is elongated, it is big that electric field strength becomes, but, according to twine the mode that number tails off laterally from the inboard, more particularly, according to the central portion on each limit, inboard antenna part 13b is 4 volumes, middle antenna part 13c is 3 volumes, outside antenna part 13a is the modes of 2 volumes, disposes outside antenna part 13a, inboard antenna part 13b and middle antenna part 13c, therefore might realize the homogenizing of the electric field strength between the configuring area of each antenna part.
And high frequency antenna 13 is connected with variable capacitor 21a at outside antenna part 13a, can adjust the impedance of outside antenna circuit 61a, be connected with variable capacitor 21c at middle antenna part 13, therefore the impedance of antenna circuit 61c in the middle of can adjusting, can make the electric current I of outside antenna circuit 61a
Out, inboard antenna circuit 61b electric current I
InElectric current I with middle antenna circuit 61c
MiddleChange freely.That is to say, by regulating the position of variable capacitor 21a, 21c, can control flows cross outside antenna part 13a electric current, flow through the electric current of inboard antenna part 13b and flow through in the middle of the electric current of antenna part 13c.Inductively coupled plasma, space under high frequency antenna 13 generates plasma, but because at this moment in the plasma density of each position and in the proportional relation of the electric field strength of each position, so by control flows cross outside antenna part 13a electric current, flow through the electric current of inboard antenna part 13b and flow through in the middle of the electric current of antenna part 13c, can control plasma density distribution.
In this case, use the optimal plasma density distribution of grasp at each, can access the variable capacitor 21a of these gas ions density distribution, the position of 21c by setting at storage part 52 in advance, can select to carry out plasma treatment by control part 50 at each position of using only variable capacitor 21a, 21c.
Like this, can control plasma density distribution, therefore, not need to change antenna, also not need to change the labour of antenna and use the cost of preparing antenna at each by impedance Control based on variable capacitor 21a, 21c.And, by the position adjustments of variable capacitor 21, can carry out meticulous Current Control, can control acquisition at should each using only plasma density distribution.
And the present invention is not limited to above-mentioned execution mode, and various variations can also be arranged.For example, in the above-mentioned execution mode,, be not limited to this, antenna part more than 4 also can be set corresponding to the size of substrate though expressed the situation that is provided with 3 antenna parts.Under the situation that 4 antenna parts are set, for example can constitute as shown in Figure 4.That is to say,, outermost antenna part 13d can be set in the outside of the outside of Fig. 2 antenna part 13a.In this example, outermost antenna part 13d places the whole mode of shape in the form of a substantially rectangular according to an angle of 90 degrees that 4 antenna cables are whenever staggered to dispose, and is that one independent mode disposes according to the central portion on limit.And constitute each antenna cable power supply to outermost antenna part 13d by 4 terminal 22d, its outer end is by capacitor 18d ground connection.But capacitor 18d not necessarily.In this situation, the power supply circuits of high frequency antenna 13 as shown in Figure 5, become the structure of adding the outermost antenna circuit 61d that is made of outermost antenna part 13d and variable capacitor 21d at the power supply circuits of Fig. 3.The impedance Z of outermost antenna circuit 61d
OutermostCan change by its capacity of position change of regulating variable capacitor 21d, make the electric current I of outermost antenna circuit 61d
OutermostCorresponding to impedance Z
OutermostVariation and change.
In addition, in the above-described embodiment, though the central portion that lists on the limit of inboard antenna part 13b is 4 volumes, the central portion on the limit of middle antenna part 13c is 3 volumes, central portion on the limit of outside antenna part 13a is the examples of 2 volumes, but is not limited to such formation.
And, in the above-described embodiment, though list the example that variable capacitor and outside antenna part 13a are connected with middle antenna part 13c, but be not limited thereto, can access same function when being arranged on outside antenna part 13a, middle antenna part 13c, inboard antenna part 13b any 2.When limiting to adjust regional, also can be arranged on any one.
And, in the above-described embodiment, be provided with variable capacitor, but also can be other impedance adjustment unit such as variable coil in order to adjust impedance.
And, in cineration device, be suitable for situation of the present invention though express, be not limited to cineration device, also can be applicable to other plasma processing apparatus such as etching, CVD film forming.And though use the FPD substrate as handled object, the present invention is not limited to this, also is applicable to the situation of other substrates such as process semiconductor wafers.
Claims (7)
1. an inductive couple plasma processing device is characterized in that, comprising:
Accommodate handled object and implement the process chamber of plasma treatment;
The mounting table of mounting handled object in described process chamber;
In described process chamber, supply with the treating-gas supply system of handling gas;
Gas extraction system to described processing indoor gas;
High frequency antenna, its by dielectric members be configured in described process chamber the outside, have the concentric antenna part more than 3 that is set to that in described process chamber, forms induction field by supply high frequency electric power; With
Adjusting comprises in the antenna circuit of described each antenna part the impedance of at least one, controls the impedance adjustment unit of the current value of described antenna part thus;
Described each antenna part, constitute a plurality of antenna cables and be configured to spiral helicine multiple antenna, and, set its winding method at its configuring area according to the mode that forms uniform electric field, between the configuring area of each antenna part, set it in the mode that can realize electric field homogenizing and twine number.
2. inductive couple plasma processing device according to claim 1 is characterized in that:
Handled object forms rectangular shape, and described antenna part disposes antenna cable in the mode that becomes the essentially rectangular shape.
3. inductive couple plasma processing device according to claim 2 is characterized in that:
Described antenna part, the central portion on each limit of essentially rectangular shape, the mode of lacking according to the winding number than other parts is set the form of winding method.
4. according to claim 2 or 3 described inductive couple plasma processing devices, it is characterized in that:
Described antenna is according to twine the winding number that mode that number tails off is set each antenna part from the antenna part of inboard antenna part laterally.
5. according to each described inductive couple plasma processing device in the claim 1～3, it is characterized in that:
The impedance of this connected antenna circuit with at least one is connected in the antenna circuit that comprises described each antenna part, is regulated in described impedance adjustment unit.
6. inductive couple plasma processing device according to claim 5 is characterized in that:
Described impedance adjustment unit has variable capacitance.
7. according to each described inductive couple plasma processing device in the claim 1～3, it is characterized in that:
Also has control unit, it preestablishes the adjusting parameter of the described impedance adjustment unit that can access the plasma density distribution that is suitable for each application most, when selecting the application of regulation, the mode that becomes predefined optimum value according to the adjusting parameter that makes the described impedance adjustment unit corresponding with this application is controlled described impedance adjustment unit.
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101124754B1 (en) | 2012-03-23 |
| JP5551343B2 (en) | 2014-07-16 |
| KR20090118839A (en) | 2009-11-18 |
| TWI475931B (en) | 2015-03-01 |
| KR101446378B1 (en) | 2014-10-01 |
| KR20110010657A (en) | 2011-02-01 |
| TW201008400A (en) | 2010-02-16 |
| CN102724803A (en) | 2012-10-10 |
| JP2009277859A (en) | 2009-11-26 |
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