CN102821534A - antenna unit used for inductance coupling plasma and inductance coupling plasma processing device - Google Patents
antenna unit used for inductance coupling plasma and inductance coupling plasma processing device Download PDFInfo
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- CN102821534A CN102821534A CN2012101895768A CN201210189576A CN102821534A CN 102821534 A CN102821534 A CN 102821534A CN 2012101895768 A CN2012101895768 A CN 2012101895768A CN 201210189576 A CN201210189576 A CN 201210189576A CN 102821534 A CN102821534 A CN 102821534A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
- H01Q1/366—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using an ionized gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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Abstract
The present invention provides an antenna unit used for inductance coupling plasma which can perform plasma distribution control for the outer region of a rectangular substrate. In the antenna unit (50), the part of an antenna (13) which forms an induced electric field overall constitutes a rectangular plane corresponding to the rectangular substrate (G), and the antenna (13) has a first antenna portion (13a) and a second line portion (13b) formed by wounding a plurality of antenna wires into a spiral shape. The plurality of antenna wires of the first antenna portion (13a) are disposed to form four corner portions of the rectangular plane, and the four corner portions are combined in different positions of the rectangular plane. The plurality of antenna wires of the second antenna portion (13b) are disposed to form center portions of the four lines of the rectangular plane, and the center portions of the four lines are combined in different positions of the rectangular plane.
Description
Technical field
The present invention relates to when the rectangular substrate such as glass substrate of flat-panel monitor (FPD:Flat Panel Display) being made usefulness are implemented inductively coupled plasma and handled employed inductively coupled plasma with antenna element and used the device for inductively coupled plasma processing of this inductively coupled plasma with antenna element.
Background technology
In flat-panel monitor (FPD) manufacturing process of LCD (LCD:Liquid Crystal Display) etc.; Existence is carried out the operation of the plasma treatment of plasma etching, film forming processing etc. to the rectangular substrate of glass, uses plasma etching apparatus, plasma CVD (Chemical Vapor Deposition: chemical vapour deposition (CVD)) various plasma treatment appts such as film formation device in order to carry out such plasma treatment.In the past; Use the capacitive coupling plasma treatment appts as plasma treatment appts mostly; But; In recent years, having inductively coupled plasma (the Inductively Coupled Plasma:ICP) processing unit that can access the such advantage of condition of high vacuum degree and highdensity plasma receives publicity.
Device for inductively coupled plasma processing; At the upside configuring high-frequency antenna that constitutes the dielectric window of the roof that is processed the container handling that substrate accommodates; In container handling, supply with when handling gas to this high frequency antenna supply high frequency electric power; Produce inductively coupled plasma in the container handling thereby make, and utilize this inductively coupled plasma to implement the plasma treatment of regulation being processed substrate.As high frequency antenna, use the planar coil antenna that forms plane predetermined pattern mostly.
In the device for inductively coupled plasma processing that has used the planar coil antenna; Space in container handling, under the flat plane antenna generates plasma; But; Because this moment and the electric field strength of each position under the antenna have the distribution in the low zone of the high zone of plasma density and plasma density pro rata, so the pattern form of flat plane antenna becomes the key factor that determines plasma density distribution.
The rectangular substrate that is used to make FPD is being implemented under the situation of plasma treatment, and using global shape is that antenna with the rectangular substrate corresponding shape is as flat plane antenna.For example, disclose the flat plane antenna of whole formation rectangle in the patent documentation 1, it has: constitute outside antenna part Outboard Sections, configuring area formation frame-like; Be arranged among the antenna part of the outside and constitute inside part, configuring area forms the inboard antenna part of frame-like equally.
In patent documentation 1 disclosed flat plane antenna, outside antenna part and inboard antenna part are to form roughly at a distance from 90 ° of staggered positions and integral body that the mode of frame shape is configured to the whirlpool shape with four strip antennas are every.Usually; So plasma attempts to form axisymmetric character because of attempting to spread to have with isotropic mode; Even under the situation of the antenna that has used such frame shape; The plasma in bight still is in the trend that weakens, and therefore, makes the number of turn many (with reference to Fig. 2 of patent documentation 1) of central portion on the turn ratio limit in bight.
Patent documentation 1: japanese kokai publication hei 2007-311182 communique
Yet in recent years, the central plasma distribution in bight and limit of the exterior lateral area of rectangular substrate is further controlled in requirement subtly, and the technology of patent documentation 1 is difficult to this requirement of reply sometimes.For example, the requirements such as rate of etch that improve the bight though exist in that the exterior lateral area of rectangular substrate suppresses the rate of etch of limit central portion, the technology of patent documentation 1 is difficult to the such requirement of reply.
Summary of the invention
The present invention is In view of the foregoing and accomplishes, and its problem is to provide the inductively coupled plasma of plasma distribution control of the exterior lateral area that can carry out rectangular substrate with antenna element and device for inductively coupled plasma processing.
In order to solve above-mentioned problem; In first viewpoint of the present invention; Provide a kind of inductively coupled plasma to use antenna element; Have and in the process chamber of device for inductively coupled plasma processing, generate antenna inductively coupled plasma, coiled type that is used for rectangular substrate is carried out plasma treatment; Wherein, in above-mentioned antenna, form the whole formation of the part rectangle plane corresponding of induction field with above-mentioned rectangular substrate; And above-mentioned antenna has many strip antennas electric wire is wound into first antenna part, second antenna part that the whirlpool shape forms; Many strip antennas electric wire of above-mentioned first antenna part is configured to, and forms four bights of above-mentioned rectangle plane and in the position different with above-mentioned rectangle plane above-mentioned four bights is combined, and many strip antennas electric wire of above-mentioned second antenna part is configured to; Form above-mentioned rectangle plane four edges central portion and in the position different with above-mentioned rectangle plane the central portion with above-mentioned four edges combines, respectively individually to above-mentioned first antenna part and the above-mentioned second antenna part supply high frequency electric power.
In above-mentioned first viewpoint, can form following structure, that is, the above-mentioned many strip antennas electric wire that constitutes above-mentioned first antenna part has: first planar portions that forms above-mentioned bight; And as the first three-dimensional portion of the state part between above-mentioned first planar portions, that keep out of the way to the top of above-mentioned first planar portions, the above-mentioned many strip antennas that constitute above-mentioned second antenna part have: second planar portions that forms the central portion on above-mentioned limit; With as the second three-dimensional portion of the state part between above-mentioned second planar portions, that keep out of the way to the top of above-mentioned second planar portions.In addition, above-mentioned first antenna part and above-mentioned second antenna part are all whenever reeled four strip antenna electric wires and are formed at a distance from 90 ° of staggered positions ground.
In second viewpoint of the present invention; Provide a kind of inductively coupled plasma to use antenna element, it is characterized in that, have in the process chamber of device for inductively coupled plasma processing and to generate antennas inductively coupled plasma, many coiled types that are used for rectangular substrate is carried out plasma treatment; In above-mentioned many strip antennas; Form the whole formation of the part rectangle plane of induction field, these antenna is configured to concentric shape, wherein; The antenna of the most peripheral at least of above-mentioned many strip antennas; Its rectangle plane is corresponding with above-mentioned rectangular substrate, and has many strip antennas electric wire is wound into first antenna part and second antenna part that the whirlpool shape forms, and many strip antennas electric wire of above-mentioned first antenna part is configured to; Form four bights of above-mentioned rectangle plane and above-mentioned four bights are combined in the position different with above-mentioned rectangle plane; Many strip antennas electric wire of above-mentioned second antenna part is configured to, form above-mentioned rectangle plane four edges central portion and in the position different with above-mentioned rectangle plane the central portion with above-mentioned four edges combines, respectively individually to above-mentioned first antenna part and the above-mentioned second antenna part supply high frequency electric power.
In the 3rd viewpoint of the present invention, a kind of device for inductively coupled plasma processing is provided, it is characterized in that possessing: process chamber, it is accommodated rectangular substrate and implements plasma treatment; Carry and put platform, it contains at above-mentioned process chamber and puts rectangular substrate; Treating-gas supply system, it is supplied with in above-mentioned process chamber and handles gas; Gas extraction system, it is to carrying out exhaust in the above-mentioned process chamber; Inductively coupled plasma is used antenna element, and it has in above-mentioned process chamber and to generate antenna inductively coupled plasma, coiled type that is used for rectangular substrate is carried out plasma treatment; And administration of power supply; It is to above-mentioned antenna supply high frequency electric power; In above-mentioned antenna; Form that the part of induction field is whole to constitute the rectangle plane corresponding with above-mentioned rectangular substrate, and above-mentioned antenna has many strip antennas electric wire is wound into first antenna part and second antenna part that the whirlpool shape forms, many strip antennas electric wire of above-mentioned first antenna part is configured to; Form four bights of above-mentioned rectangle plane and above-mentioned four bights are combined in the position different with above-mentioned rectangle plane; Many strip antennas electric wire of above-mentioned second antenna part is configured to, form above-mentioned rectangle plane four edges central portion and in the position different with above-mentioned rectangle plane the central portion with above-mentioned four edges combines, above-mentioned administration of power supply is respectively individually to above-mentioned first antenna part and the above-mentioned second antenna part supply high frequency electric power.
In the 4th viewpoint of the present invention, a kind of device for inductively coupled plasma processing is provided, it is characterized in that possessing: process chamber, it is accommodated rectangular substrate and implements plasma treatment; Carry and put platform, it contains at above-mentioned process chamber and puts rectangular substrate; Treating-gas supply system, it is supplied with in above-mentioned process chamber and handles gas; Gas extraction system, it is to carrying out exhaust in the above-mentioned process chamber; Inductively coupled plasma is used antenna element, and it has in above-mentioned process chamber and to generate antennas inductively coupled plasma, many coiled types that are used for rectangular substrate is carried out plasma treatment; And administration of power supply; It is to above-mentioned antenna supply high frequency electric power; In above-mentioned many strip antennas, form the whole formation of the part rectangle plane of induction field, these antenna is configured to concentric shape; The antenna of the most peripheral at least of above-mentioned many strip antennas; Its rectangle plane is corresponding with above-mentioned rectangular substrate, and has many strip antennas electric wire is wound into first antenna part and second antenna part that the whirlpool shape forms, and many strip antennas electric wire of above-mentioned first antenna part is configured to; Form four bights of above-mentioned rectangle plane and above-mentioned four bights are combined in the position different with above-mentioned rectangle plane; Many strip antennas of above-mentioned second antenna part are configured to, form above-mentioned rectangle plane four edges central portion and in the position different with above-mentioned rectangle plane the central portion with above-mentioned four edges combines, above-mentioned administration of power supply is respectively individually to above-mentioned first antenna part and the above-mentioned second antenna part supply high frequency electric power.
According to the present invention; In antenna; Form that the part of induction field is whole to constitute the rectangle plane corresponding with rectangular substrate, many strip antennas electric wire of first antenna part is configured to, four bights of formation rectangle plane and four bights are combined in the position different with rectangle plane; Many strip antennas electric wire of second antenna part is configured to; Form rectangle plane four edges central portion and in the position different with rectangle plane the central portion with four edges combines, respectively independently to first antenna part and the second antenna part supply high frequency electric power, therefore; Can corner and the electric field strength of the central portion on limit control, thereby can carry out the plasma distribution control of the exterior lateral area of rectangular substrate.
Description of drawings
Fig. 1 is the cutaway view of the related device for inductively coupled plasma processing of an expression execution mode of the present invention.
Fig. 2 is the vertical view of an example of the employed antenna element of device for inductively coupled plasma processing of presentation graphs 1.
Fig. 3 is the vertical view of first antenna part of the employed high frequency antenna of antenna element of presentation graphs 2.
Fig. 4 is the stereogram of first antenna part of the employed high frequency antenna of antenna element of presentation graphs 2.
Fig. 5 is the vertical view of second antenna part of the employed high frequency antenna of antenna element of presentation graphs 2.
Fig. 6 is the stereogram of second antenna part of the employed high frequency antenna of antenna element of presentation graphs 2.
Fig. 7 is the figure of other modes of the expression independent Current Control that is used to realize first antenna part and second antenna part.
Fig. 8 is the figure of other modes of the expression independent Current Control that is used to realize first antenna part and second antenna part.
Fig. 9 is the vertical view of the example of the expression antenna element that possesses the outside antenna and inboard antenna.
Figure 10 is the vertical view of other examples of the expression antenna element that possesses the outside antenna and inboard antenna.
Figure 11 is the vertical view of the example of the expression antenna element that also possesses middle antenna except outside antenna with the inboard antenna.
Description of reference numerals:
1... main body container; 2... dielectric walls (dielectric members); 3... antenna chamber; 4... process chamber; 13... high frequency antenna; 13a... first antenna part; 13b... second antenna part; 14... integrator; 15... high frequency electric source; 15a... first high frequency electric source; 15b... second high frequency electric source; 16a, 16b... power supply part; 19,19a, 19b... supply lines; 20... treating-gas supply system; 22a, 22b... terminal; Put platform 23... carry; 30... exhaust apparatus; 50,50a, 50b, 50c... antenna element; 61,62,63,64,71,72,73,74,91,92,93,94... antenna; 61a, 62a, 63a, 64a, 71a, 72a, 73a, 74a... planar portions; 61b, 62b, 63b, 64b, 71b, 72b, 73b, 74b... solid portion; 69,79... supply lines; 80... control part; 81... user interface; 82... storage part; 83... power divider; 84... impedance adjusting mechanism; 98... bend; 113, the inboard antenna of 123...; 113a... first antenna part; 113b... second antenna part; 133... middle antenna; G... rectangular substrate.
Embodiment
Below, with reference to accompanying drawing execution mode of the present invention is described.Fig. 1 is the cutaway view of the related device for inductively coupled plasma processing of an expression execution mode of the present invention.This device when rectangular substrate, for example FPD form thin-film transistor on glass substrate to metal film, ITO (IndiumTinOxide: tin indium oxide) use in the ashing treatment of the etching of film, oxide-film etc., etchant resist.As FPD, LCD, electroluminescence (Electro Luminescence are shown for example; EL) display, plasma display (PDP:Plasma Display Panel) etc.
This plasma treatment device has the airtight main body container 1 that has been carried out the square barrel shape that the aluminium of anodized constitutes by conductive material, for example internal face.It is assembled that this main body container 1 can decompose ground, and through earth connection 1a ground connection.Utilize dielectric walls 2 that main body container 1 is divided into antenna chamber 3 and process chamber 4 up and down.Therefore, dielectric walls 2 constitutes the roof of process chamber 4.Dielectric walls 2 is by Al
2O
3Deng formations such as pottery, quartz.
Lower portion in dielectric walls 2 embeds the spray basket 11 that has supply processing gas to use.Spray basket 11 is set to cross, and forms the structure of the support dielectric wall 2 from the below.In addition, support the spray basket 11 of above-mentioned dielectric walls 2, form and utilize a plurality of hooks (not shown) to hang on the state of the ceiling of main body container 1.
This spray basket 11 is made up of conductive material, and the aluminium that preferably by metal, for example its inner surface has been carried out anodized so that it can not be processed gas attack and produce pollutant constitutes.Be formed with the gas flow path 12 that flatly extends at this spray basket 11, a plurality of gas discharge hole 12a that extend towards the below are communicated with this gas flow path 12.On the other hand, in the upper face center of dielectric walls 2, be provided with gas supply pipe 20a with the mode that is communicated with this gas flow path 12.Gas supply pipe 20a connects to its outside from the ceiling of main body container 1, and is connected with comprising the treating-gas supply system 20 of handling gas supply source and valve system etc.Therefore, in plasma treatment, the processing gas of supplying with from treating-gas supply system 20 is supplied in the spray basket 11 via gas supply pipe 20a, and discharges in process chamber 4 from the gas discharge hole 12a of spray basket 11 lower surfaces.
Between the sidewall 4a of sidewall 3a main body container 1, antenna chamber 3 and process chamber 4, be provided with outstanding to the inside bearing support 5, dielectric walls was put on this bearing support 5 in 2 years.
In antenna chamber 3, be equipped with the antenna element 50 that comprises high frequency (RF:Radio Frequency) antenna 13.Through to high frequency antenna 13 supply high frequency electric power, thereby in process chamber 4, form induction field, and the processing gas plasmaization of utilizing this induction field to supply with from spray basket 11.Wherein, state after the detailed description of antenna element 50.
Below in process chamber 4, put carrying of rectangular substrate G and put platform 23 to be provided with across dielectric walls 2 and high frequency antenna 13 opposed modes to be used for carrying.Carry and to put platform 23 by conductive material, for example the surface aluminium that carried out anodized constitutes.Carry place carry put platform 23 rectangular substrate G by electrostatic chuck (not shown) absorption and keep.
Carry and to put platform 23 and be accommodated in the insulator frame 24, and by pillar 25 supportings of hollow.Pillar 25 is maintained airtight conditions with the bottom of main body container 1 and it is connected, and is equipped on outer elevating mechanism (not shown) supporting of main body container 1, puts platform 23 rectangular substrate G being moved into, utilizes when taking out of elevating mechanism drive along the vertical direction to carry.In addition, dispose the bellows 26 that surrounds pillar 25 airtightly taking between the bottom of carrying the insulator frame 24 put platform 23 and main body container 1, thus, put platform 23 and move up and down the air-tightness that can guarantee that also container handling 4 is interior even carry.In addition, be provided with supply that rectangular substrate G moves into, takes out of move into to take out of mouthful 27a and open and close this and move into the gate valve of taking out of mouthful 27a at the sidewall 4a of process chamber 4.
Utilization be arranged in the pillar 25 of hollow supply lines 25a via integrator 28 with high frequency electric source 29 with year put platform 23 and be connected.In plasma treatment, this high frequency electric source 29 is put platform 23 and applies RF power that bias voltage uses, the for example frequency RF power as 6MHz to carrying.Ion in the plasma that the RF power that utilizes this bias voltage to use will generate in process chamber 4 imports rectangular substrate G effectively.
And, in order to control the temperature of rectangular substrate G, and be provided with temperature control device and the temperature sensor (all not shown) that constitutes by heating arrangements such as ceramic heater, refrigerant flow etc. in the platform 23 carrying to put.For pipe arrangement, the wiring of these mechanisms, parts, all the pillar 25 from hollow passes through and derivation outside main body container 1.
In the bottom of process chamber 4, be connected with the exhaust apparatus 30 that comprises vacuum pump etc. via blast pipe 31.Utilize this exhaust apparatus 30 with process chamber 4 exhausts, thus in plasma treatment with setting, be maintained specified vacuum atmosphere (for example 1.33Pa) in the process chamber 4.
Place the rear side of carrying the rectangular substrate G that puts platform 23 to be formed with cooling space (not shown) carrying, and to be provided with and to be used for the He gas flow path 41 of the constant heat transmission of supply pressure with gas that is He gas.Use gas through supplying with heat transmission to the rear side of rectangular substrate G like this, can avoid rectangular substrate G under vacuum, to produce temperature and rise or variations in temperature.
Each structural portion of this plasma treatment device constitutes, and is connected with the control part 80 that is made up of microprocessor (computer) and by its control.In addition; Be connected with the user interface 81 that constitutes by keyboard, display etc. at control part 80; Operating personnel are used to manage the input operation of order input of plasma treatment appts etc. through keyboard, display shows the operational situation of plasma treatment appts visually.And; Be connected with storage part 82 at control part 80, in storage part 82, storing the control program that is used under the control of control part 80 realizing the various processing carried out by plasma treatment appts, being used to make each structural portion of plasma treatment appts to carry out the program of handling according to treatment conditions is handling procedure section (process recipe).The handling procedure section is stored in the storage medium in the storage part 82.Storage medium can be hard disk, the semiconductor memory that is built in computer, also can be movably equipment such as CDROM, DVD, flash memory.In addition, also can be from other devices via the convey program section suitably of special circuit for example.And, according to accessing arbitrarily the handling procedure section and make control part 80 carry out these blocks from storage part 82 as required, thereby make plasma treatment appts under the control of control part 80, carry out desirable processing from the indication of user interface 81 etc.
Next, above-mentioned antenna element 50 is at length described.
Fig. 2 is the vertical view of an example of the employed antenna element of antenna element of the device of presentation graphs 1; Fig. 3 is the vertical view of first antenna part of the employed high frequency antenna of antenna element of presentation graphs 2; Fig. 4 is the stereogram of first antenna part of the employed high frequency antenna of antenna element of presentation graphs 2; Fig. 5 is the vertical view of second antenna part of the employed high frequency antenna of antenna element of presentation graphs 2, and Fig. 6 is the stereogram of second antenna part of the employed high frequency antenna of antenna element of presentation graphs 2.
As shown in Figure 2; In the high frequency antenna 13 of antenna element 50; Be formed with the relative part of dielectric walls 2 that helps to generate isoionic induction field; Whole constitute rectangular-shaped (frame-like) plane corresponding, and high frequency antenna 13 has many strip antennas electric wire is wound into the whirlpool shape and the first antenna part 13a and the second antenna part 13b that form with rectangular substrate G.The antenna wire of the first antenna part 13a is configured to, and forms four bights of rectangle plane and in the position different with rectangle plane four bights is combined.In addition, the antenna of the second antenna part 13b is configured to, form rectangle plane four edges central portion and in the position different the central portion of this four edges is combined with rectangle plane.
Four terminal 22a and supply lines 69 via being arranged at around the gas supplying tubing 20a supply powers to the first antenna part 13a, supply power to the second antenna part 13b via being arranged at gas supplying tubing 20a four terminal 22b and supply lines 79 on every side.
As shown in Figure 1, all be connected with the first power supply part 16a at four terminal 22a of the first antenna part 13a, all be connected with the second power supply part 16b (all only illustrating among Fig. 1) at four terminal 22b of the second antenna part 13b.Four first power supply part 16a are connected with supply lines 19a, four second power supply part 16b and supply lines 19b.Be connected with the integrator 14a and the first high frequency electric source 15a at supply lines 19a, be connected with the integrator 14b and the second high frequency electric source 15b at supply lines 19b.Thus; For example supply with to the first antenna part 13a and the second antenna part 13b from the first high frequency electric source 15a and the second high frequency electric source 15b that frequency is the RF power of 13.56MHz respectively independently, thereby can utilize control part 80 to control the current value of supplying with to the first antenna part 13a and the second antenna part 13b independently.
Utilization is disposed high frequency antenna 13 from dielectric walls 2 by the separator 17 that insulating element constitutes discretely, and this configuring area is corresponding with rectangular substrate G.
Like Fig. 3 and shown in Figure 4, thereby the first antenna part 13a in four bights high frequency antenna 13, that form above-mentioned rectangle plane constitutes multiple (quadruple) antenna that four strip antenna electric wires, 61,62,63,64 coiling flat shapes is formed frame-like.Particularly; Antenna 61,62,63,64 is whenever reeled at a distance from 90 ° of staggered positions ground; And the part in four bights of the above-mentioned rectangle plane that formation and dielectric walls 2 are relative forms planar portions 61a, 62a, 63a, 64a, and the part between these planar portions 61a, 62a, 63a, the 64a forms keeps out of the way the three-dimensional 61b of portion, 62b, 63b, 64b with the state that is in the position different with rectangle plane to the top.These three-dimensional 61b of portion, 62b, 63b, 64b are disposed at and are helpless to generate isoionic position.
In addition; Like Fig. 5 and shown in Figure 6; The second antenna part 13b of the central portion of four edges high frequency antenna 13, that constitute above-mentioned rectangle plane, thus constitute multiple (quadruple) antenna that four strip antenna electric wires, 71,72,73,74 coiling flat shapes is formed frame-like.Particularly, antenna wire 71,72,73,74 is whenever reeled at a distance from 90 ° of staggered positions ground, and formation and dielectric walls
Supply power to the antenna wire 61,62,63,64 of the first antenna part 13a via above-mentioned four terminal 22a and supply lines 69, supply power to the antenna wire 71,72,73,74 of the second antenna part 13b via above-mentioned four terminal 22b and supply lines 79.
Processing action when next, the device for inductively coupled plasma processing that uses formation as above being implemented plasma etching process processes to rectangular substrate G describes.
At first, under the state of having opened gate valve 27, utilize carrying mechanism that rectangular substrate G is moved in the process chamber 4 and carry to place to carry from gate valve 27 (not shown) and put after carrying of platform 23 put face, utilize electrostatic chuck (not shown) that rectangular substrate G is fixed on to carry and put on the platform 23.Next; In process chamber 4, discharge the processing gas of in process chamber 4, supplying with from treating-gas supply system 20 from the gas discharge hole 12a of spray basket 11; And; Utilize exhaust apparatus 30 via carrying out vacuum exhaust in 31 pairs of process chambers 4 of blast pipe, thereby with being maintained the for example pressure atmosphere about 0.66Pa～26.6Pa in the process chamber.
In addition, at this moment,, and supply with as the He gas of heat transmission to the cooling space of the rear side of rectangular substrate G with gas via He gas flow path 41 for fear of temperature rising or the variations in temperature of rectangular substrate G.
Next; From the first high frequency electric source 15a and the second high frequency electric source 15b; Apply the for example high frequency of 13.56MHz to the first antenna part 13a in the formation bight of high frequency antenna 13 and the second antenna part 13b that constitutes the limit central portion respectively; Thus, in process chamber 4, form the induction field corresponding via dielectric walls 2 with rectangular substrate G.In process chamber 4, utilize the induction field that forms like this will handle gas plasmaization, thereby in the zone corresponding, generate uniform highdensity inductively coupled plasma with rectangular substrate G.
Its result in high frequency antenna 13, forms the frame-like corresponding with rectangular substrate G by first antenna part 13a of the part relative with dielectric walls 2 and the global shape that the second antenna part 13b constitutes, therefore, and can be to the whole plasma of supplying with of rectangular substrate G.
As previously discussed; As in the past only with antenna wire form frame-like then the plasma in bight be in the trend that weakens; Therefore, in above-mentioned patent documentation 1, make the central portion on turn ratio limit of the antenna in bight come to realize isoionic uniformity, still more; The central plasma distribution in bight and limit of the exterior lateral area of rectangular substrate is further controlled in requirement in recent years subtly, and the technology of patent documentation 1 is difficult to this requirement of reply.
Therefore; In this execution mode; In high frequency antenna 13; Be formed with and help to generate part isoionic induction field, relative with dielectric walls 2, wholely constitute rectangular-shaped (frame-like) plane corresponding, and high frequency antenna 13 constitutes with rectangular substrate G; Have antenna wire and form the first antenna part 13a in four bights and the second antenna part 13b that antenna wire constitutes the central portion of four edges; Distinguish independently to the first antenna part 13a and the second antenna part 13b supply high frequency electric power from the first high frequency electric source 15a and the second high frequency electric source 15b, and utilize the current value that 80 pairs of control parts flow through the first antenna part 13a and the second antenna part 13b to control, therefore; The central plasma distribution in bight and limit of the exterior lateral area of rectangular substrate G can be controlled more subtly, thereby desirable plasma treatment can be carried out.
In addition; First antenna part 13a formation is whenever reeled four strip antenna electric wires 61,62,63,64 at a distance from 90 ° of staggered positions ground, flat shape is multiple (quadruple) antenna of frame-like; Form in the position corresponding with four bights relative with dielectric walls 2, help to generate isoionic planar portions 61a, 62a, 63a, 64a; Part between these planar portions 61a, 62a, 63a, the 64a forms keeps out of the way so that be helpless to generate the isoionic three-dimensional 61b of portion, 62b, 63b, 64b to the top; The second antenna part 13b also constitute with four strip antenna electric wires 71,72,73,74 every at a distance from 90 ° of staggered positions ground coilings, flat shape is multiple (quadruple) antenna of frame-like; Form in the position corresponding with the four edges central portion relative with dielectric walls 2, help to generate isoionic planar portions 71a, 72a, 73a, 74a; Part between these planar portions 71a, 72a, 73a, the 74a forms keeps out of the way so that be helpless to generate the isoionic three-dimensional 71b of portion, 72b, 73b, 74b to the top; The first antenna part 13a and the second antenna part 13b all follow the form of multiple antenna in the past basically, and utilize the simpler structure that they are combined can realize controlling independently the plasma distribution of bight and limit central portion.
In addition; More than show and utilize the first antenna part 13a corresponding and also can carry out the example of Current Control independently to them, but also can utilize the antenna part formation high frequency antenna 13 more than three also can carry out Current Control to them independently with high frequency antenna 13 that limit central authorities corresponding these two antenna parts of second antenna part constitute frame-like with the bight.For example; Can limit central authorities be divided into two antenna parts of second antenna part and third antenna portion; In addition, can also constitute, limit central authorities are divided into three antenna parts; The middle part of three antenna parts that are divided into is made as second antenna part, the two side portions that clips the middle part is made as third antenna portion.Also can be other structures that obtain according to said structure.
In addition; Carry out the current value control except be connected independent high frequency electric source with the second antenna part 13b at the first antenna part 13a; Can also be as shown in Figure 7; After utilizing power divider (Power splitter) 83 to cut apart from the RF power of a high frequency electric source 15, via integrator 14a, 14b respectively to the first antenna part 13a and the second antenna part 13b supply high frequency electric power, thereby the first antenna part 13a and the second antenna part 13b are carried out current value control.Thus, use a high frequency electric source to get final product, so can alleviate facility load.In addition, as shown in Figure 8, can come the first antenna part 13a and the second antenna part 13b are carried out current value control through any supply lines setting in supply lines 19a and 19b by the impedance adjusting mechanism 84 that variable capacitance etc. constitutes.At this moment, as long as a high frequency electric source 15 and an integrator 14 are set, thereby can further alleviate facility load.
Next, other examples to antenna element describe.
Fig. 9 is the vertical view of other examples of expression antenna element.If rectangular substrate G maximizes, then only relying on by means of profile is the high frequency antenna 13 of the frame-like of rectangle, because the plasma energy of middle body weakens, and is difficult to form uniform plasma.Therefore; As shown in Figure 9; In this example; Above-mentioned high frequency antenna 13 is configured to outside antenna and to dispose profile be that the inboard antenna 113 of the frame-like of rectangle constitutes antenna element 50a on the concentric shape of side ground within it, and the plasma density that improves the inside region corresponding with the central portion of rectangular substrate G makes plasma density more even.In this example, inboard antenna 113 has the structure identical with above-mentioned high frequency antenna 13.That is, the whole frame-like that forms of the flat shape of the part relative with dielectric walls 2 has the first antenna part 113a in formation four bights wherein and constitutes the second antenna part 113b of the central portion on each limit.And, with the high frequency antenna that constitutes outside antenna 13 identical ground, control the current value of the first antenna part 113a and the current value of the second antenna part 113b independently.Thus, also can adjust the bight of inboard antenna 113 and the plasma density distribution of limit central portion, thereby can make plasma density more even.
But; Owing to the uneven situation of plasma density that demonstrates limit central authorities and bight more significantly is peripheral part; Therefore, if, then need not to form the structure identical with high frequency antenna 13 for inboard antenna just only can control plasma density distribution fully through the structure that outside antenna is formed high frequency antenna 13; As long as outside antenna can be controlled the current value of bight and limit central portion independently at least, then do not have special qualification.For example, also can be antenna element 50b with inboard antenna 123 of that kind shown in Figure 10.That is, inboard antenna 123 constitutes, thereby with whole circinate multiple (quadruple) antenna that forms of four strip antenna electric wires, 91,92,93,94 coilings.Particularly, antenna wire 91,92,93,94 is every, and the configuring area of antenna wire forms roughly frame-like at a distance from 90 ° of staggered positions ground coilings, and the number of turn of central portion on turn ratio limit in bight that is in the trend that plasma weakens is many.In embodiment illustrated, the number of turn in bight is 3, and the number of turn of the central portion on limit is 2.In addition; The plasma that surrounds with outboard wheel profile and nearside wheel profile by inboard antenna 123 generates the zone and is formed with crank throw portion (bend) 98 with respect to the mode of the center line symmetry that runs through opposed two limits (minute surface symmetry) at each antenna wire, therefore can make plasma generate zone and rectangular substrate G over against.That is, can generate with rectangular substrate G over against the plasma of state, thereby can improve isoionic uniformity.
The common multiple antenna that in addition, can use above-mentioned patent documentation 1 that kind is as inboard antenna.
And shape ground disposes the antenna of three above frame-like with one heart.Under this situation, need to lean at least outermost antenna to carry out Current Control independently in bight and these two parts of limit central authorities at least.
In addition, shown in figure 11, also can be that structure and the identical middle antenna 133 of the above-mentioned first antenna part 13a are arranged at the antenna element 50c between outside antenna 13 and the inboard antenna 123.According to such structure, can only strengthen such, the local plasma distribution control in bight in the zone between outside antenna 13 and the inboard antenna 123, thereby can improve the controlled of plasma distribution.Can replace above-mentioned in the middle of the antenna 133 and plasma distribution that between outside antenna 13 and inboard antenna 123, the structure middle antenna identical with the second antenna part 13b is set and carries out the part is controlled.In addition, can also replace in the middle of antenna 133 and be provided with constitute by antenna part identical and the antenna part identical with antenna part 13b with antenna part 13a, with outside antenna 13 identical antenna.That is, in the triple antennas that are made up of outside antenna, middle antenna, inboard antenna, outside antenna becomes the disclosed structure of cutting apart antenna of the application with middle dwi hastasana.According to this structure, even can realize the plasma treatment appts that under the situation that the substrate that should handle further maximizes, also can handle uniformly.In addition, inboard antenna also is not limited to the structure of inboard antenna 123 certainly.
In addition, the present invention is not limited to above-mentioned execution mode and can carries out various distortion.For example; The layout of the antenna wire in the antenna is not limited to the layout shown in the above-mentioned execution mode; As long as have the rectangular profile of the peripheral part that covers rectangular substrate at least; The part corresponding with the periphery of rectangular substrate has at least two zones and can control these regional current values independently, then do not have special restriction.In addition, be 3 example though show the number of turn of antenna wire, be not limited thereto.And, though thereby antenna is constituted the circinate quadruple antenna of the whole formation of four strip antenna electric wires coiling, also can constitute the multiple antenna beyond the quadruple.
In addition; In the above-described embodiment; To utilizing dielectric walls to constitute the ceiling portion of process chamber; And the structure of antenna configurations in the upper surface of the dielectric walls that is positioned at the outside ceiling portion of process chamber be illustrated, if but can utilize dielectric walls to cut off between antenna and the plasma generation zone, then also can be with the structure of antenna configurations in process chamber.
In addition, show the situation that the present invention is applicable to Etaching device in the above-described embodiment, still also can be applicable to other plasma treatment appts such as CVD film forming.In addition, use the example of FPD substrate, also can be applicable to the situation that other rectangular substrate such as solar cell are handled as rectangular substrate though show.
Claims (8)
1. an inductively coupled plasma is used antenna element,
Have in the process chamber of device for inductively coupled plasma processing and to generate antenna inductively coupled plasma, coiled type that is used for rectangular substrate is carried out plasma treatment,
It is characterized in that,
In said antenna, form that the part of induction field is whole to constitute the rectangle plane corresponding with said rectangular substrate, and said antenna has many strip antennas electric wire is wound into first antenna part, second antenna part that the whirlpool shape forms,
Many strip antennas electric wire of said first antenna part is configured to, and form four bights of said rectangle plane and said four bights are combined in the position different with said rectangle plane,
Many strip antennas electric wire of said second antenna part is configured to, form said rectangle plane four edges central portion and in the position different with said rectangle plane the central portion with said four edges combines,
Respectively individually to said first antenna part and the said second antenna part supply high frequency electric power.
2. inductively coupled plasma according to claim 1 is used antenna element, it is characterized in that,
The said many strip antennas electric wire that constitutes said first antenna part has: first planar portions that forms said bight; And as the first three-dimensional portion of the state part between said first planar portions, that keep out of the way to the top of said first planar portions,
The said many strip antennas electric wire that constitutes said second antenna part has: form said limit central portion second planar portions and as the second three-dimensional portion of the state part between said second planar portions, that keep out of the way to the top of said second planar portions.
3. inductively coupled plasma according to claim 1 and 2 is used antenna element, it is characterized in that,
Said first antenna part and said second antenna part are all whenever reeled four strip antenna electric wires and are formed at a distance from 90 ° of staggered positions ground.
4. an inductively coupled plasma is used antenna element,
Have and in the process chamber of device for inductively coupled plasma processing, generate antennas inductively coupled plasma, many coiled types that are used for rectangular substrate is carried out plasma treatment; And in said many strip antennas; Part whole formation rectangle plane and these antenna of forming induction field are configured to concentric shape
It is characterized in that,
The antenna of the most peripheral at least of said many strip antennas, its rectangle plane is corresponding with said rectangular substrate, and has many strip antennas electric wire is wound into first antenna part and second antenna part that the whirlpool shape forms,
Many strip antennas electric wire of said first antenna part is configured to, and form four bights of said rectangle plane and said four bights are combined in the position different with said rectangle plane,
Many strip antennas electric wire of said second antenna part is configured to, form said rectangle plane four edges central portion and in the position different with said rectangle plane the central portion with said four edges combines,
Respectively individually to said first antenna part and the said second antenna part supply high frequency electric power.
5. inductively coupled plasma according to claim 4 is used antenna element, it is characterized in that,
Any strip antenna in said many strip antennas, except that the antenna of said most peripheral; Has many strip antennas electric wire; And have wherein a part of antenna wire and constitute and be disposed at part desired portion, that form induction field, and the antenna wire of remainder is the structure of the portion of keeping out of the way that do not form induction field.
6. a device for inductively coupled plasma processing is characterized in that,
Possess:
Process chamber, it is accommodated rectangular substrate and implements plasma treatment;
Carry and put platform, it contains at said process chamber and puts rectangular substrate;
Treating-gas supply system, it is supplied with in said process chamber and handles gas;
Gas extraction system, it is to carrying out exhaust in the said process chamber;
Inductively coupled plasma is used antenna element, and it has in said process chamber and to generate antenna inductively coupled plasma, coiled type that is used for rectangular substrate is carried out plasma treatment; And
Administration of power supply, it is to said antenna supply high frequency electric power,
In said antenna, form that the part of induction field is whole to constitute the rectangle plane corresponding with said rectangular substrate, and said antenna has many strip antennas electric wire is wound into first antenna part and second antenna part that the whirlpool shape forms,
Many strip antennas electric wire of said first antenna part is configured to, and form four bights of said rectangle plane and said four bights are combined in the position different with said rectangle plane,
Many strip antennas electric wire of said second antenna part is configured to, form said rectangle plane four edges central portion and in the position different with said rectangle plane the central portion with said four edges combines,
Said administration of power supply is respectively individually to said first antenna part and the said second antenna part supply high frequency electric power.
7. a device for inductively coupled plasma processing is characterized in that,
Possess:
Process chamber, it is accommodated rectangular substrate and implements plasma treatment;
Carry and put platform, it contains at said process chamber and puts rectangular substrate;
Treating-gas supply system, it is supplied with in said process chamber and handles gas;
Gas extraction system, it is to carrying out exhaust in the said process chamber;
Inductively coupled plasma is used antenna element, and it has in said process chamber and to generate antennas inductively coupled plasma, many coiled types that are used for rectangular substrate is carried out plasma treatment; And
Administration of power supply, it is to said antenna supply high frequency electric power,
In said many strip antennas; Form the whole formation of the part rectangle plane of induction field; These antenna is configured to concentric shape, the antenna of the most peripheral at least of said many strip antennas, and its rectangle plane is corresponding with said rectangular substrate; And have many strip antennas electric wire is wound into first antenna part and second antenna part that the whirlpool shape forms
Many strip antennas electric wire of said first antenna part is configured to, and form four bights of said rectangle plane and said four bights are combined in the position different with said rectangle plane,
Many strip antennas electric wire of said second antenna part is configured to, form said rectangle plane four edges central portion and in the position different with said rectangle plane the central portion with said four edges combines,
Said administration of power supply is respectively individually to said first antenna part and the said second antenna part supply high frequency electric power.
8. according to claim 6 or 7 described device for inductively coupled plasma processing, it is characterized in that,
Also has the control part that the current value that flows through said first antenna part and the current value that flows through said second antenna part are controlled.
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| JP2011127896A JP5666991B2 (en) | 2011-06-08 | 2011-06-08 | Inductively coupled plasma antenna unit and inductively coupled plasma processing apparatus |
| JP2011-127896 | 2011-06-08 |
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| KR101473371B1 (en) | 2013-05-07 | 2014-12-16 | 한국표준과학연구원 | Antenna Structure for Inductively Coupled Plasma |
| KR101841739B1 (en) | 2016-08-31 | 2018-03-23 | 인베니아 주식회사 | Antenna for inductively coupled plasma |
| KR101848906B1 (en) | 2016-08-31 | 2018-05-15 | 인베니아 주식회사 | Antenna for inductively coupled plasma |
| KR101848907B1 (en) * | 2016-10-04 | 2018-05-15 | 인베니아 주식회사 | plasma processing apparatus |
| KR101895884B1 (en) * | 2016-10-05 | 2018-09-07 | 인베니아 주식회사 | Antenna structure for plasma and plasma processing apparatus using the same |
| KR101866212B1 (en) * | 2016-11-16 | 2018-06-12 | 인베니아 주식회사 | Plasma processing apparatus |
| KR101840295B1 (en) * | 2016-11-23 | 2018-03-20 | (주)얼라이드 테크 파인더즈 | Plasma device |
| KR101866214B1 (en) * | 2016-12-29 | 2018-06-12 | 인베니아 주식회사 | Antenna structure for plasma |
| KR102161954B1 (en) * | 2019-06-12 | 2020-10-06 | 인베니아 주식회사 | Antenna assembly for inductively coupled plasma apparatus and inductively coupled plasma having the same |
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| JP2012256660A (en) | 2012-12-27 |
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