CN101582403A - Semiconductor package featuring flip-chip die sandwiched between metal layers - Google Patents

Semiconductor package featuring flip-chip die sandwiched between metal layers Download PDF

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Publication number
CN101582403A
CN101582403A CNA2008101761748A CN200810176174A CN101582403A CN 101582403 A CN101582403 A CN 101582403A CN A2008101761748 A CNA2008101761748 A CN A2008101761748A CN 200810176174 A CN200810176174 A CN 200810176174A CN 101582403 A CN101582403 A CN 101582403A
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China
Prior art keywords
tube core
power device
encapsulation
metal level
device tube
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Granted
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CNA2008101761748A
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Chinese (zh)
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CN101582403B (en
Inventor
A·C·特苏
M·艾斯拉米
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GEM Services Inc USA
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GEM Services Inc USA
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Publication of CN101582403A publication Critical patent/CN101582403A/en
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Publication of CN101582403B publication Critical patent/CN101582403B/en
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to flip-chip packages for semiconductor devices, which feature a die sandwiched between metal layers. One metal layer comprises portions of the lead frame configured to be in electrical and thermal communication with various pads on a first surface of the die (e.g. IC pads or MOSFET gate or source pads) through a solder ball contact. The other metal layer is configured to be in at least thermal communication with the opposite side of the die. Embodiments of packages in accordance with the present invention exhibit superior heat dissipation qualities, while avoiding the expense of wire bonding. Embodiments of the present invention are particularly suited for packaging of power devices.

Description

With the flip-chip die that is clipped between the metal level is the semiconductor packages of feature
The cross reference of related application
This non-temporary patent application requires the priority of the U.S. Provisional Patent Application No.61/053561 of submission on May 15th, 2008, and is incorporated herein its full content with for referencial use.
Background technology
Fig. 1 shows the simplified plan view of the routine encapsulation of envelop power MOSFET tube core.Figure 1A shows the simplification sectional view of this encapsulation of Fig. 1 along 1A-1A ' line.
Particularly, conventional power MOSFET encapsulation 100 comprises having top surface and be the power MOSFET tube core 102 of feature with gate pads 104 and source pad 106.Gate pads 104 is constructed to be electrically connected with first lead-in wire 110 by closing line 112, and source pad 106 is constructed to be electrically connected with second lead-in wire 114 by closing line 116.
The basal surface of tube core 102 is a feature with drain pad 108.Drain pad is electrically connected with following pipe core welding disc 118 by conductivity adhesives 120.This adhesives 120 still is a thermal conductivity, so that operating period is transferred to outside the encapsulation by the radiator 122 that the lower surface by pipe core welding disc forms by the heat that the MOSFET tube core produces.Can also by the lead-in wire that integrates with pipe core welding disc with thermal energy conduction outside encapsulation.
Though the encapsulation of Fig. 1,1A is worked, still there are some shortcomings.A shortcoming is the wire-bonded that need carry out between pad or die surfaces and the lead-in wire.Particularly, because the closing line material is made of gold usually, this is a kind of very expensive commodity, and therefore this wire-bonding step is expensive.
Because closing line bending (strain) need be connected to closing line on tube core and the little target area at the end place of lead-in wire by some power and with high accuracy then, it also is difficult therefore carrying out wire-bonding step.Lead-in wire ruptures under stress or the accurate aligning failure of the end that goes between all can increase defective and reduce output.The power that lead-in wire is connected to tube core in this step also may be damaged tube core.
And, source electrode with limited the ability that heat energy is distributed in encapsulation being connected of grid closing line.Particularly, the closing line of small size only provides the thermally conductive materials that is used for heat delivered is arrived the small size outside the encapsulation.
At last, the less relatively cross section that is provided by closing line can hinder between tube core and lead-in wire and set up low-resistance contact.The routine of doing in order to set up the less contact of resistance is made great efforts to mean usually and is used more closing line, thereby makes above-mentioned cost problem aggravation.And, use the spininess closing line to need a plurality of Connection Steps in order to set up with the low resistance contact of die surfaces, it causes the danger that may damage tube core once more.
Use is grown and/or many closing lines can cause other shortcomings as the electrical connection to tube core.For example closing line can cause bigger inductance, and it may weaken the switch mosfet effect.And closing line can increase the not controlled external inductors or the impedance that need compensate to Power IC in internal integrated circuit.
Therefore, prior art needs improved package design so that present good heat conduction and low manufacturing cost.
Summary of the invention
Relate to the encapsulation that is used for semiconductor device according to embodiments of the invention, it is a feature with the flip-chip die that is clipped between the metal level.A metal level comprises that being arranged to by each pad (for example, the grid of IC pad or MOSFET or source pad) on scolder contact and the tube core first surface of lead frame is electrically connected and hot linked each several part.Other metal levels are configured at least the opposite side hot link with tube core.Encapsulation embodiment according to the present invention demonstrates remarkable heat dispersion, has avoided the expense of wire-bonded simultaneously.
Below in conjunction with this paper and accompanying drawing describe in more detail these and other embodiment of the present invention with and feature and some potential advantages.
Description of drawings
Fig. 1 shows the simplified plan view of conventional power MOSFET encapsulation.
The routine that Figure 1A shows Fig. 1 encapsulates the simplification sectional view of 1A-1A ' along the line.
Fig. 2 shows the simplified plan view according to the encapsulation of the embodiment of the invention.
Fig. 2 A shows the simplification sectional view of the encapsulation embodiment 2A-2A ' along the line of Fig. 2.
Fig. 2 B shows the simplification sectional view according to the optional embodiment of encapsulation of the present invention.
Fig. 2 C shows the simplification sectional view according to the another optional embodiment of encapsulation of the present invention.
Fig. 2 D shows the simplification sectional view according to an optional embodiment again of encapsulation of the present invention.
Fig. 2 DA shows the also simplification sectional view of an optional embodiment according to encapsulation of the present invention.
Fig. 2 E-EA shows plane and the sectional view according to the lead frame embodiment of the embodiment of the invention respectively.
Fig. 2 FA-FB shows respectively according to the plane of the optional embodiment of the lead frame of the embodiment of the invention and sectional view.
Fig. 2 GA-GB shows respectively according to the plane of the optional embodiment of the lead frame of the embodiment of the invention and sectional view.
Fig. 2 H shows the simplified plan view according to lead frame embodiment of the present invention.
Fig. 2 IA-IB shows respectively according to the plane of the optional embodiment of the lead frame of the embodiment of the invention and sectional view.
Fig. 2 J shows the simplified plan view according to lead frame embodiment of the present invention.
Fig. 2 K shows the simplified plan view according to lead frame embodiment of the present invention.
Fig. 2 LA-LB shows respectively according to the plane of the optional embodiment of the lead frame of the embodiment of the invention and sectional view.
Fig. 2 M shows the simplified plan view according to the embodiment of lead frame of the present invention.
Fig. 2 N shows the simplified plan view according to the embodiment of lead frame of the present invention.
Fig. 2 O shows the simplified plan view according to the embodiment of lead frame of the present invention.
Fig. 3 A shows the simplified plan view according to the last metal level of the optional embodiment of lead frame of the present invention, and it is configured to support a plurality of tube cores.
Fig. 3 B shows the simplified plan view according to the lower metal layer of the optional embodiment of lead frame of the present invention, and it is configured to support a plurality of tube cores.
Fig. 3 C shows the simplification sectional view that is configured to seal the encapsulation embodiment of a plurality of tube cores according to of the present invention.
Fig. 4 shows the simplified plan view according to a plurality of die arrangement in the lead frame of the embodiment of the invention.
It is the simplification sectional view of the encapsulation embodiment of feature that Fig. 5 shows according to the present invention with a plurality of tube cores of stacked structure.
Fig. 6 shows the simplification sectional view according to the optional embodiment of encapsulation of the present invention.
Fig. 7 shows the simplification sectional view according to the optional embodiment of encapsulation of the present invention.
Embodiment
Fig. 2 is the simplified plan view according to encapsulation embodiment of the present invention.Fig. 2 A is the simplification sectional view of the encapsulation of Fig. 2 along section line 2A-2A '.
Encapsulation 200 comprises MOSFET tube core 202, and it has with gate pads 204 and source pad 206 is the top surface of feature.The basal surface of MOSFET tube core 202 is a feature with drain electrode contact 208.
The adhesives 220 of drain electrode contact 208 by conduction and heat conduction is electrically connected with following the first metal layer 224.An example of this conduction and Heat Conduction Material is a scolder.In a certain embodiment, the first metal layer can utilize soldered ball that pre-projection is provided or be pre-formed the surface that can weld contact.
The outstanding lead-in wire of outside that extends to plastic packaging body of the all-in-one-piece of the first metal layer 224 to be provided for electrically contacting with the MOSFET drain electrode.The lower portion of exposing the first metal layer of packaging body can be used as radiator.
Encapsulation 200 comprises second metal level 226 that covers above the tube core.The first 228 of second metal level connects 230 by scolder and is electrically connected with gate pads 204.The second portion 232 of second metal level connects 234 by a plurality of scolders and is electrically connected with source pad 206.The part 228 and 232 of last metal level 226 arranges that successively (route) is for extending to the outside of plastic packaging body, to use the lead-in wire that connects grid and source electrode.This layout can comprise that the vertical height that changes metal part 228 and 232 is to mate the height of the first metal layer.In a particular embodiment, can be by being bent to form the shape of second metal level.In other embodiments, can provide second metal level with preformed shape.
The package design of Fig. 2-2A can provide the many advantages that exceed conventional package design.An advantage is to have avoided wire-bonded during manufacture.On the contrary, contact the contact that provides between the tube core and second metal level, and do not need the bending and accurate aligning of metal bond line by scolder.Use this scolder contact to replace the overall cost that wire-bonded has reduced the incidence of defective and reduced manufacturing and encapsulation.
Embodiments of the invention also provide favourable electrical property.For example, thereby provide less inductance, and can allow switching speed faster with respect to the inductance that closing line has reduced metal level.Use metal level to replace the contact that narrow closing line can also advantageously provide resistance to reduce to the packed tube core of sealing.
Another possibility advantage that encapsulation embodiment shown in Fig. 2-2A provides be to have strengthened heat-sinking capability.Particularly, lower metal layer contacts hot link with the drain electrode of tube core, heat can be transmitted to outside the encapsulation by lead-in wire thus.And in certain embodiments, the part of lower metal layer is exposed outside the encapsulation, thus serves as the radiator of surrounding environment.
And, last metal level also in fact by scolder connect with tube core than the large tracts of land thermo-contact, particularly with the tube core upper surface on the source pad that exists.This large tracts of land contact has further strengthened heat by going between from tube core flowing to surrounding environment outside encapsulation.And in certain embodiments, the part of last metal level is exposed outside the encapsulation, thus serves as the radiator of surrounding environment.
Thereby use soldered ball only to be electrically connected with the side foundation of tube core though the specific embodiment of Fig. 2-2A shows, this is not that the present invention is necessary.According to optional embodiment, can adopt soldered ball to set up and be electrically connected with the contact on the tube core both sides.
Though and the specific embodiment of Fig. 2-2A show by scolder connect lower metal layer is contacted with drain electrode and on the contacting of metal level and gate/source, this is not that the present invention is necessary.Optional embodiment of the present invention can following metal layer contacting tube core source electrode and grid, go up the metal layer contacting drain electrode and be feature.Such embodiment is shown in the simplification sectional view of Fig. 2 B.In addition, two metal levels all provide the characteristic of desired high thermoconductivity and reliability, low manufacturing cost.
And Fig. 2 C shows the simplification sectional view according to another embodiment of encapsulation of the present invention.In this particular example, lower metal layer is bent upwards to contact the part of metal level, and last metal level self is bent downwardly to extend to outside the packaging body.The advantage that the embodiment of Fig. 2 C provides is to guarantee that the part that the first metal layer projects upwards keeps being embedded in reliably in the plastic body of encapsulation.In addition, the design of Fig. 2 C has proposed the radiator of square or rectangular profile, so that make the integration section of the lower metal layer that exposes on package bottom can not extend to the side of encapsulation always.
With after die package is in plastic packaging body, can by punching press pass the lead-in wire that exposes with the encapsulation of Fig. 2 C from around material separate (singulated) so that the part of lead-in wire extends to outside the packaging body and can be used for test.According to optional embodiment, can will encapsulate from material around by cutting technique and separate, make the lead-in wire that exposes and the flush of encapsulation.
Fig. 2 D shows the simplification sectional view of the another embodiment of encapsulation according to the present invention.In this specific embodiment, first and second metal levels are configured to protrude from the intermediate point of package thickness.Because it is crooked that outstanding lead-in wire is gone up in either direction (up or down), and can form different shape (J-shaped, wing, the inverted gull wing shape of gull) according to the needs of the final environment of placing of encapsulation, therefore thisly be configured to encapsulation sufficient use flexibility is provided.
Fig. 2 DA shows the simplification sectional view of the another embodiment of encapsulation according to the present invention.Present embodiment shows the gull gull wing lead, and it projects upwards towards the radiator that is arranged on the encapsulation top.
Fig. 2 E-2EA shows simplified plan view and the sectional view of the another embodiment of encapsulation according to the present invention respectively.The encapsulation of Fig. 2 E-2EA comprises the outstanding lead-in wire that only is arranged on side of encapsulation.The first outstanding lead-in wire is formed by the part lower metal layer that is positioned at the encapsulation interior thickness and contact with source pad on the tube core by the scolder contact.The second outstanding lead-in wire is also formed by the part lower metal layer that contacts with gate pads on the tube core by the scolder contact.The 3rd outstanding lead-in wire is gone up metal level by part and is formed, and metal level contacts with the drain pad of tube core and is at the height of interior thickness and is bent downwardly before finally withdrawing from packaging body on the described part.Shown in Fig. 2 E, last metal level can comprise the aperture that allows break-through packaging body Plastic Package, goes up the mechanical interlocked of metal level in helping thus to encapsulate.
Up to the present the embodiment of Miao Shuing relates to the encapsulation of sealing the MOSFET device with three terminals (grid, source electrode, drain electrode).But, the invention is not restricted to seal such tube core.The optional embodiment of encapsulation can be configured to seal and have still less or the tube core of multiterminal more according to the present invention.
For example, Fig. 2 FA-B shows according to the plane graph of the lead frame that is used for plane two-terminal devices (for example diode) of the embodiment of the invention and the sectional view of 2F-2F ' along the line.Lead frame only comprises and the hot linked lower metal layer of die back side.Two parts of last metal level are electrically connected with each contact on the tube core upper side.
Similarly, Fig. 2 GA-B shows according to the plane graph of the lead frame that is used for vertical two-terminal devices (for example diode) of the embodiment of the invention and the sectional view of 2G-2G ' along the line.Lead frame comprises the lower metal layer that is electrically connected with contact on the die back side and the last metal level that is electrically connected with contact on the die front side.
Fig. 2 H shows the plane graph of the lead frame that is used for two device package, but this pair device has three terminals, wherein two same sections that are connected to device.Specifically, lower metal layer is electrically connected with b contact, and upward metal level defines two parts, and each is electrically connected with front contact.Special package shown in Fig. 2 H is the encapsulation of TO-220/247/251 type, it is characterized in that index aperture (tag hole), and this index aperture is configured to hold screw so that encapsulation is fastened to supporting construction.Other embodiment comprise the encapsulation of TO263/252 type, and it has the outside lead to plastic body, and it is bent or is pre-formed the same level with contact (meet) drain electrode radiator.
Though the encapsulation of just having described and the embodiment of lead frame design for singulated dies, the present invention is also nonessential like this.Can be configured to seal a plurality of tube cores according to an alternative embodiment of the invention.
For example, Fig. 2 IA-B shows the sectional view according to the simplified plan view of the embodiment of lead frame of the present invention and 2I-2I ' along the line, and it is configured to seal two dual-dies.In this specific embodiment, two shared same terminal that are used for public b contact of tube core, and have the terminal and the contact of the separation on its front.
Fig. 2 J shows the simplified plan view according to the embodiment of lead frame of the present invention, and it is configured to seal two MOSFET tube cores.In this specific embodiment, two shared same terminal that are used for public b contact (drain electrode) of MOSFET tube core, and on the front of tube core, have the terminal that separates that is used for source electrode and gate contacts and contact.
Though the embodiment of Fig. 2 J shows each the structure with single terminal that is used for source electrode, drain and gate contact, the present invention and nonessential so.Fig. 2 K shows the simplified plan view of the lead frame of the MOSFET tube core with a plurality of terminals that are used for source electrode (S) and drain electrode (D).
Similarly, Fig. 2 LA-B shows to have and is used for each the simplified plan view and the sectional view of lead frame of multiple source gate terminal of two MOSFET tube cores, and this MOSFET tube core has the drain electrode that is isolated from each other.The part lead frame that contacts with these drain electrodes is fixed together by the intercell connector structure, and this intercell connector structure is cut off (for example by punching press) after the mold step.Fig. 2 M shows the simplified plan view of the lead frame that supports two tube cores, and wherein these two tube cores have public drain electrode that contacts with two terminals (D1, D2) and the multiple source gate terminal that is used for each tube core.
Similarly, Fig. 2 N shows the plane graph of another embodiment of lead frame, this lead frame is characterised in that the multiple source gate terminal and has a plurality of drain terminals that clip is connected separately, and comprising that intercell connector connects, this intercell connector is connected between separation period and mold cuts off from metallic matrix on every side afterwards.Fig. 2 O shows the simplified plan view of another embodiment of the lead frame of sealing a plurality of MOSFET tube cores, this MOSFET tube core each have in groups drain terminal to and comprise intercell connector.
Though described so far embodiment relates to lead frame and the encapsulation that is configured to seal the same type tube core, this is neither the present invention necessary.Optional embodiment can be configured to seal the different die type, for example MOSFET and integrated circuit (IC).
For example, Fig. 3 A-B shows the plane graph of the lead frame 300 of the optional embodiment according to the present invention.Fig. 3 A shows the plane graph of metal level 302 and three packed tube cores 304,306 and 308, and Fig. 3 B shows the plane graph of lower metal layer 310 and packed tube core 304,306 and 308.Fig. 3 C shows the simplification sectional view.
The last metal level 302 of lead frame defines the lead-in wire that contacts with each pad on the encapsulated tube core upper surface.For example, tube core 304 is represented the IC tube core that has many contacts on the surface thereon.Therefore, the last metal level 302 of lead frame is included in a plurality of lead-in wires (no.5-17) that extend these pad tops.And the scolder that inserts contact 312 provides and being electrically connected and hot link of necessity of tube core.
In addition, the lead-in wire of the last metal level 302 of lead frame is not limited to contact the IC tube core of specific dimensions.Therefore, as shown in Figure 3A, these lead-in wires comprise two set of solder contacts so that the IC that occupies the bigger area of coverage is provided tube core.
On the contrary, tube core 306 and 308 is the MOSFET that only have gate pads and bigger source pad on its each top surface.Therefore, last metal level only comprises two separated portions that are used for each MOSFET tube core, its above corresponding gate/source pad, extend and by solder contacts 312 of inserting with each tube core hot link be electrically connected.Particularly, the gate pads (lead-in wire no.4) of last metal part 330 contact MOSFET tube cores 306, and the source pad (lead-in wire no.33-36) of bigger last metal part 332 contact tube cores 306.
Though not necessarily, in this specific embodiment, bigger last metal part 332 comprises the lattice-shaped structure of the pattern that limits aperture 333.These apertures have reduced the thermal stress in the bigger metal part, and this thermal stress is caused by the pucker ﹠ bloat in response to encapsulation internal heat environment change.
Though the aperture of Fig. 3 A embodiment is square, this is not that the present invention is necessary.Optional embodiment can be a feature with the metal level that limits other shape apertures according to application-specific, includes but not limited to circle or polygon.
Similarly, the major part 340 of last metal level allows with the source pad thermo-contact of MOSFET tube core 308 and electrically contacts (lead-in wire no.21-27).In the specific embodiment of Fig. 3 A-B, identical (broad) of last metal level partly (corresponding to lead-in wire no.17) provides with the public of gate pads of IC and MOSFET tube core 308 and contacted.
Last metal level 302 is characterised in that independent lead-in wire (no.18-20 and 32) and go between in groups (no.1-3 and 28-31).Following mask body is described, and lead-in wire 1-3,28-31 and 32 is electrically connected with drain pad on the MOSFET tube core downside by lower metal layer.
Shown in the sectional view of Fig. 3 C, before exposing from packaging body, the lead-in wire that extends from the last metal level of lead frame 300 is bent downwardly, so that make it finally outstanding from the bottom of the thickness of encapsulation.But this is not that the present invention is necessary.In other embodiments, last metal level can expose on the top of package side surface, so that as described crooked on all directions in conjunction with Fig. 2 D.
The structure of the lower metal layer 348 shown in Fig. 3 B is simpler than last metal level.In certain embodiments, the part 350 of the lower metal layer below the IC tube core 304 is not electrically connected with the IC tube core fully.Therefore, part 350 does not contact with any lead-in wire, but exposes so that radiator to be provided in the bottom of encapsulation.Needing IC ground connection and be connected among some embodiment of pin, providing electrical connection, in this example, providing electrical connection by the pin 5 that connects among 350 to Fig. 3 A by connecting.
In the specific embodiment that between two or more tube cores, needs to connect, provide connection by on composition suitably and continuous pin, having two (a plurality of) ball contact positions.The example that pin 17 among Fig. 3 A comes to this, it connects grid and the IC of MOSFET.
The part 352 of lower metal layer is electrically connected and hot link with drain pad on MOSFET tube core 306 downsides.Zone 352a makes progress dimpling (jog) so that the pin 1-3 in groups of metal level and pin 32 are separately gone up in contact, provides thus and the contacting of the drain electrode of MOSFET tube core 306.In the lower metal layer these dimpling that makes progress also is used for providing layer mechanical interlocked of the encapsulation of plastic packaging body.The downside of following metal part 352 also exposes the downside of encapsulation so that radiator to be provided.
The part 354 of lower metal layer is electrically connected and hot link with drain pad on MOSFET tube core 308 downsides.Part 354a makes progress dimpling so that the 28-31 of pin in groups and the pin 18 of metal level are gone up in contact, provides thus and the contacting of the drain electrode of MOSFET tube core 308.In the lower metal layer these dimpling that makes progress also is used for providing layer mechanical interlocked of the encapsulation of plastic packaging body.The downside of following metal part 354 also exposes the downside of encapsulation so that radiator to be provided.
In the specific embodiment of the encapsulation of Fig. 3 A-B, pin no.18 is used to provide with the installation of the radiator of MOSFET 308 drain electrodes and is electrically connected.Pin no.19 and 20 is disconnected pins in the present embodiment, but in other embodiments can be with the spare space that acts on hot link and electrical connection.
The lead frame embodiment that has just described provides some advantages.An advantage is to seal the adaptability that is easy to obtain of the tube core of different structure and size.For example, occupied under the lattice-shaped metal and partly go up most usable area though the MOSFET tube core is shown, this is not necessary.The embodiment of the lead frame shown in Fig. 3 A-B can be configured to seal the MOSFET tube core that occupies less area coverage or be encapsulated in the different area coverages that are suitable in the metal part.In some such embodiment, the position of specific contact (for example grid) can be fixed, and the position of other contacts (for example source electrode) can spatially change according to the size and dimension of tube core.
According to can playing a role in encapsulation inside of the embodiment of the invention, so that between the two or more individual dice that are installed on the same horizontal plane, provide the signal transmitting function according to application need from the outstanding part that is used as the leadframe metal layer of pin of packaging body.For example, Fig. 4 shows the rough schematic view of embodiment, and wherein IC tube core 401 and MOSFET tube core 402 are connected by the continuous pin that has soldered ball and be connected.In addition, Fig. 4 show according to the continuous pin of this of some embodiment connect can extend become part 400 and and then extend to part 404, it provides continuous signal path between each contact on IC tube core 402 and the MOSFET tube core 406.In certain embodiments, part 404 is extended as outstanding pin part 408.
Though the embodiment has so far described encapsulation and lead frame is configured to seal a plurality of tube cores that are provided with signal path in same horizontal plane, this is not that the present invention is necessary.Optional embodiment according to encapsulation of the present invention and lead frame can be a feature with vertical stack orientation or other directed a plurality of tube cores.
For example, Fig. 5 shows the simplification sectional view of the embodiment of the encapsulation that is configured to seal two flip-chip die.Downside upper support first flip-chip die 500 of metal level 502 on lead frame.In lead frame lower metal layer 506 upper supports second flip-chip die 504.Tube core 500 and 504 lip-deep contacts are electrically connected to each other by soldered ball 508.First tube core, 500 lip-deep other contacts and intermediate metal layer 510 electrically contact.
Except that the tube core structure of lamination, several aspects of the embodiment of Fig. 5 merit attention.At first, being encapsulated on its both sides of Fig. 5 exposed radiator.This radiator can with following PC plate hot link, and another radiator and surrounding environment hot link.Should be understood that the use of this a plurality of radiators can also be used for aforementioned one or more embodiment.
The second, be not limited to use a plurality of metal levels of two or arbitrary number according to embodiments of the invention, or be not limited to only integrated two tube cores.But embodiments of the invention can use a plurality of metal levels of the tube core that accompanies any desirable number.
As described in according to Fig. 3 A-C, provide flexibility by allowing and for package designer at the tube core of the multiple size of various metal level upper supports according to the lead frame of the embodiment of the invention.According to embodiments of the invention, can also realize the further flexibility of package design by a plurality of modules of combination in sandwich.
For example, Fig. 6 shows encapsulation 600, and as shown in the figure, the encapsulation of Fig. 6 comprises first flip-chip die 602 that is clipped between first and second metal levels 604 and 606.The manufacturing of multi-chip module (MCM) is finished by integration module 609, and module 609 comprises second flip-chip die 610 that itself is clipped between metal level 612 and 614.Permission is assembled this encapsulation in the mode that is similar to splicing (puzzle) interlocking sheet by a plurality of tube core assemblies that clipped, and this package design for specific needs provides sufficient additional flexibility.
Fig. 7 shows according to the present invention and encapsulates the simplification sectional view of an embodiment again, and it is formed than small components by a plurality of.Specifically, encapsulation comprises that such tube core, this tube core have in same plane interconnection that one of metal level by soldered ball and sandwich contacts and signal path (for example, by the soldered ball of shade and the lower metal layer between FC DIE 3 and the FC DIE 4).Encapsulation comprises that also such tube core, this tube core have the signal path perpendicular interconnection each other of the soldered ball of utilization contact (for example by the shade soldered ball, between FC DIE 1 and FC DIE 2).In this encapsulation, the lower metal layer of sandwich can remain in the lower plane so that set up and the contacting of the lower metal layer of one of support tube core connected vertically, perhaps can be bent upwards so that set up and the contacting of last metal level, described on the top of metal layer contacting tube core connected vertically.The encapsulation of Fig. 7 comprises the radiator on the both sides, and wherein upside has a plurality of radiators.
Be not limited to seal the tube core of particular type according to embodiments of the invention.But, be particularly suitable for according to encapsulation of the present invention such as the tube core of some type of power device.With regard to the application, term " power device " should be understood to be meant the semiconductor device that is used as switch or rectifier in power electronic circuit.It includes but not limited to discrete device, for example diode, power MOSFET, IGBT (IGBT) and be used in power integrated circuit in the analog or digital control of discrete device.
In combination, power device is normally used for providing power management functions, for example power supply, battery charging controller.Power discrete device with plane or vertical stratification can be handled the power from several milliwatts to tens kilowatt.For above-mentioned encapsulation, typical power device can be operated between about 500W and 5mW.In off state, from approximately several volts to up to about 2000 volts voltage reverse breakdown can take place.The operating current of power device can be at several milliamperes in the scope of hundreds of peace.
Though described specific embodiment above, can use various changes, optional structure and equivalent structure comprehensively.Therefore, top description and explanation should not limit the scope of the present invention that is defined by the following claims.

Claims (33)

1, a kind of encapsulation that is used for semiconductor device, this encapsulation comprises:
The first metal layer, it is configured to and the hot link of power device tube core; And
Second metal level, it is set on the side opposite with described the first metal layer of power device tube core, described second metal level is configured to by the pad hot link on soldered ball contact and the power device die surfaces and is electrically connected, and the first metal layer or second metal level comprise the integrated-lead of giving prominence to from the plastic packaging body of at least a portion of package power component pipe core, soldered ball contact and first and second metal levels.
2, according to the encapsulation of claim 1, wherein the first metal layer also is configured to be electrically connected with the power device tube core.
3, according to the encapsulation of claim 2, wherein the first metal layer is configured to be electrically connected with the power device tube core by the contact of second soldered ball.
4, according to the encapsulation of claim 1, wherein the part of the first metal layer is exposed plastic packaging body to form radiator.
5, according to the encapsulation of claim 1, wherein the part of second metal level is exposed plastic packaging body to form radiator.
6, according to the encapsulation of claim 1, also comprise the second power device tube core, it is configured to be electrically connected with the part of second metal level.
7, according to the encapsulation of claim 6, wherein the same part of second metal level is configured to be electrically connected with the first power device tube core and the second power device tube core.
8, according to the encapsulation of claim 7, wherein the described of second metal level is electrically connected with the first metal layer is vertical with a part.
9, according to the encapsulation of claim 7, wherein the first power device tube core is that the described of the MOSFET and second metal level is configured to be electrically connected with the grid of the first power device tube core with a part.
10, according to the encapsulation of claim 6, wherein second metal level is configured to hold the soldered ball contact at the place, fixed position, and other soldered balls contacts that are received into the first power device tube core at the diverse location place according to the size or the shape of the first power device tube core.
11, according to the encapsulation of claim 6, also comprise the 3rd power device tube core, its be arranged on second tube core or under and have a pad that is electrically connected with the pad of the second power device tube core by soldered ball.
12, according to the encapsulation of claim 1, wherein the power device tube core comprises the MOSFET tube core, and second metal level comprises the second portion that is configured to the first that is electrically connected with gate pads on the MOSFET die surfaces and is configured to be electrically connected with source pad on the MOSFET die surfaces.
13, according to the encapsulation of claim 12, wherein the first metal layer is configured to the drain electrode hot link on the second surface with the MOSFET tube core and is electrically connected.
14, according to the encapsulation of claim 12, wherein lead-in wire integrates with second metal level.
15, according to the encapsulation of claim 1, wherein the power device tube core comprises integrated circuit (IC) tube core, and second metal level comprises and is configured to a plurality of parts of being electrically connected with respective pad on the described IC die surfaces.
16, according to the encapsulation of claim 15, wherein the first metal layer is configured to be electrically connected with the second surface of described IC tube core.
17, according to the encapsulation of claim 1, wherein the part of second metal level defines aperture.
18, a kind of encapsulation that is used for semiconductor device, this encapsulation comprises:
The first metal layer, it is configured to first side hot link at least with the first power device tube core;
The second power device tube core, its be positioned on the first power device tube core or under, and electrically contact by second side of soldered ball contact with the first power device tube core; And
Second metal level, it is arranged on the side opposite with the first power device tube core of the second power device tube core, described second metal level is configured to and the hot link at least of second power die, the first metal layer or second metal level comprise integrated-lead, this integrated-lead is outstanding from the plastic packaging body of at least a portion of package power component pipe core, soldered ball contact and first and second metal levels, and wherein the first power device tube core or the second power device tube core are electrically connected with the first metal layer or second metal level.
19, according to the encapsulation of claim 18, wherein the first power device tube core is electrically connected with the first metal layer by the contact of second soldered ball.
20, according to the encapsulation of claim 18, wherein the first power device tube core is electrically connected with the 3rd metal level between first and second metal levels by the contact of second soldered ball.
21, according to the encapsulation of claim 18, wherein the part of the first metal layer is exposed plastic packaging body to form radiator.
22, according to the encapsulation of claim 18, wherein the part of second metal level is exposed plastic packaging body to form second radiator.
23, a kind of method of encapsulated semiconductor device, this method comprises:
The first metal layer is provided, and it is configured to the first surface hot link at least with the power device tube core;
Second metal level is provided, its be configured to by soldered ball contact and power device tube core with the described first side opposed second surface hot link and be electrically connected; And
At least a portion of encapsulation this tube core, soldered ball and first and second metal level is to form packaging body in Plastic Package.
24,, thereby wherein provide the first metal layer also to be electrically connected with the power device tube core according to the method for claim 23.
25, according to the method for claim 23, wherein the package power component pipe core has exposed the part of the first metal layer as radiator.
26, according to the method for claim 23, wherein the package power component pipe core has exposed the part of second metal level as second radiator.
27,, also comprise the lead-in wire that exposes packaging body to the part of the plane of second metal level outside sweep second metal level with formation according to the method for claim 23.
28, according to the method for claim 23, wherein second metal level has the part to the plane of second metal level outside sweep, thereby forms the lead-in wire that exposes packaging body.
29, according to the method for claim 23, wherein the first metal layer has and is configured to and the hot linked at least part of the first surface of the second power device tube core; And
Second metal level comprises and is configured to be electrically connected and hot linked part with the pad with on the first surface opposing second surface of the second power device tube core by soldered ball contact.
30, according to the method for claim 29, wherein said part also is electrically connected with pad on the second surface of the first power device tube core.
31, according to the method for claim 29, wherein the first power device tube core comprises the MOSFET tube core, and described part is electrically connected with the grid of MOSFET tube core.
32, according to the method for claim 29, also comprise the 3rd power device tube core is provided, its be arranged on the second power device tube core or under and be electrically connected with the second power device tube core by the contact of second soldered ball.
33, a kind of method that is formed for the encapsulation of semiconductor device, this method comprises:
The first metal layer is provided, and it is configured to first side hot link at least with the first power device tube core;
The second power device tube core is provided, its be positioned on the first power device tube core or under and electrically contact by second side of soldered ball contact with the first power device tube core; And
Second metal level is provided, it is arranged on the side opposite with the first power device tube core of the second power device tube core, described second metal level is configured to and the second power device tube core hot link at least, the first metal layer or second metal level comprise integrated-lead, its plastic packaging body from least a portion of package power component pipe core, soldered ball contact and first and second metal level is outstanding, and wherein the first power device tube core or the second power device tube core are electrically connected with the first metal layer or second metal level.
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