CN108400117A - The heat-dissipating gain-type semiconductor subassembly and preparation method thereof that three-dimensional is integrated - Google Patents
The heat-dissipating gain-type semiconductor subassembly and preparation method thereof that three-dimensional is integrated Download PDFInfo
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- CN108400117A CN108400117A CN201710066338.0A CN201710066338A CN108400117A CN 108400117 A CN108400117 A CN 108400117A CN 201710066338 A CN201710066338 A CN 201710066338A CN 108400117 A CN108400117 A CN 108400117A
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
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Abstract
The three-dimensional integrating semiconductor component of the present invention includes to face surface semiconductor sub-assembly and radiating seat by the mutual electric property coupling of closing line.It includes top and bottom device that this, which faces surface semiconductor sub-assembly, is connected to respectively on the two opposite sides of the first routing circuit, and the radiating seat includes metallic plate and the secondary route circuit on metallic plate.This face surface semiconductor sub-assembly be set to secondary route circuit in radiating seat in opening, and closing line provides the electric connection between first and second routing circuit, is assembled in the device interconnecting in sub-assembly with facing face to the terminal pad of radiating seat.
Description
Technical field
The present invention relates to a kind of semiconductor subassembly and preparation method thereof, espespecially a kind of three-dimensional heat-dissipating gain-type integrated half
Conductor assembly will face surface semiconductor sub-assembly and be electrically connected to radiating seat by closing line.
Background technology
The market trend of multimedia device tends to design requirement that is rapider and being more thinned.One of which method be with
Face (face-to-face) mode is faced to interconnect stream oriented device, so as to have shortest route distance between stream oriented device.Due to overlapped
Device between directly can mutually transmit, to reduce delay, therefore the signal integrity degree of component can be greatly improved, and save additional consumption
Energy.Therefore, the nearly all advantage of three dimensional integrated circuits storehouse (3D IC stacking) can be showed by facing surface semiconductor component,
And without forming silicon perforation with high costs (Through-Silicon Via) in stack chip.However, since semiconductor fills
Set be easy to High Operating Temperature issue come into force can degradation phenomena, if therefore face the stacking-type chip in face and do not radiated suitably,
The thermal environment of device can be made to be deteriorated, cause to be likely to occur the problem of failing immediately when operation.
In addition, united states patent (USP) reference number 8,008,121,8,519,537 and 8,558,395 discloses the various groups with intermediary layer
Part structure is that intermediary layer is set to the chip chamber for facing face setting.Although it in stack chip without forming silicon perforation
(TSV), but in intermediary layer complex process, production qualification rate can be caused low and high for providing the silicon perforation that chip chamber is electrically route
Cost.
For above-mentioned reason and other reasons as described below, at present there is an urgent need for developing a kind of new-type semiconductor subassembly, with
Reach the requirement of high packaging density, preferable signal integrity degree and high-cooling property.
Invention content
The object of the present invention is to provide a kind of three-dimensional semiconductor subassemblies integrated, and it is electrical will to face surface semiconductor sub-assembly
It is connected to radiating seat, and makes the sub-assembly and the hot conducting of radiating seat.The radiating seat includes a metallic plate and a routing circuit.It should
Metallic plate provides the sub-assembly sinking path, and routing circuit is then electrically fanned out to road by a plurality of closing line to provide sub-assembly
By, thus it is effectively improved the hot and electrical property efficiency of component.
According to above-mentioned and other purposes, the present invention provides a kind of semiconductor subassembly, by closing line, makes to face face and partly lead
Body sub-assembly is electrically connected to radiating seat.It includes a first device, a second device and one that this, which faces surface semiconductor sub-assembly,
One routing circuit.The radiating seat includes a metallic plate and a secondary route circuit.In a preferred embodiment, the first device with
The hot conducting of metallic plate, and be spaced from each other with second device by the first routing circuit, and pass through the first routing circuit and second
Device surface towards face is electrically connected；First routing circuit provides first device and second device and primary is fanned out to routing and most short
Interconnection distance；Secondary route circuit is set on metallic plate, and laterally around the sub-assembly, and is provided and be further fanned out to road
By；Closing line is connected to the sub-assembly and the radiating seat, to be electrically connected the first routing circuit and secondary route circuit.
In another aspect, the present invention provides a kind of semiconductor subassembly, it includes：One faces surface semiconductor sub-assembly,
Including a first device, a second device and one first routing circuit, wherein the first device be electrically coupled to the first via by
One first surface of circuit, and the second device is electrically coupled to an opposite second surface of first routing circuit；One heat dissipation
Seat comprising a metallic plate and a secondary route circuit, the secondary route circuit are set on a surface of the metallic plate, wherein
The secondary route circuit has one to run through opening, and this faces surface semiconductor sub-assembly and is set to this in opening, and makes this
First device is pasted to the radiating seat, and an outer surface of the second surface of first routing circuit and the secondary route circuit
In the same direction；And this is faced face and is partly led by a plurality of closing line by first routing circuit and the secondary route circuit
Body sub-assembly is electrically coupled to the radiating seat.
In another further aspect, the present invention provides a kind of production method of semiconductor subassembly comprising following step：There is provided one
Face surface semiconductor sub-assembly comprising a first device, a second device and one first routing circuit, the wherein first device
It is electrically coupled to a first surface of first routing circuit, and the second device is electrically coupled to the one of first routing circuit
Opposite second surface；There is provided a radiating seat comprising a metallic plate and a secondary route circuit, the secondary route circuit are set to
Through opening on one surface of the metallic plate and with one；This is faced into surface semiconductor sub-assembly and is set to the secondary route circuit
Should through opening in；And a plurality of closing line is provided, electric property coupling this face surface semiconductor sub-assembly and the radiating seat.
Use unless specifically described or between step " then " words, or the step of must sequentially occurring, above-mentioned steps
Sequence there is no restriction in listed above, and can change or rearrange according to required design.
The semiconductor subassembly and preparation method thereof of the present invention has many advantages.For example, by first device and second
Device surface towards face is electrically coupled to the two opposite sides of the first routing circuit, it is possible to provide most short between first device and second device
Interconnection distance.Closing line is connected to the sub-assembly and the practice of the radiating seat, it is possible to provide reliable interface channel will be assembled in
Device interconnecting in sub-assembly to radiating seat terminal pad.
The above-mentioned and other features and advantages of the present invention can be more clear bright by the detailed narration of embodiments discussed below
.
Description of the drawings
Refer to the attached drawing, the present invention can be of greater clarity by the narration in detail of embodiments discussed below, wherein：
Fig. 1 is in first embodiment of the invention, in the sectional view for sacrificing formation line route on support plate；
Fig. 2 is that dielectric layer and the sectional view of blind hole are formed in Fig. 1 structures in first embodiment of the invention；
Fig. 3 is that the sectional view of the first conducting wire is formed in Fig. 2 structures in first embodiment of the invention；
Fig. 4 is that the sectional view for setting first device is connect in Fig. 3 structures in first embodiment of the invention；
Fig. 5 is that the sectional view of molding material is formed in Fig. 4 structures in first embodiment of the invention；
Fig. 6 is that the sectional view for sacrificing support plate is removed from Fig. 5 structures in first embodiment of the invention；
Fig. 7 is to be connect in Fig. 6 structures in first embodiment of the invention and set second device with finished surface towards surface semiconductor sub-assembly
The sectional view of making；
Fig. 8 is to protrude the sectional view of seat and metal column from metallic plate protrusion in first embodiment of the invention；
Fig. 9 is to provide junction film in first embodiment of the invention in Fig. 8 structures and route the sectional view of substrate；
Figure 10 is in first embodiment of the invention, and Fig. 9 structures carry out the sectional view after laminating technology；
Figure 11 is in first embodiment of the invention, and Figure 10 structures form depression to complete the sectional view of radiating seat making；
Figure 12 is that the sectional view that Fig. 7 faces surface semiconductor sub-assembly is arranged in Figure 11 structures in first embodiment of the invention；
Figure 13 is to be connect in Figure 12 structures in first embodiment of the invention and set closing line to complete cuing open for semiconductor device fabrication
View；
Figure 14 is that the sectional view of sealing material is formed in Figure 13 structures in first embodiment of the invention；
Figure 15 is that the sectional view for setting soldered ball is connect in Figure 14 structures in first embodiment of the invention；
Figure 16 is the sectional view of another semiconductor subassembly in first embodiment of the invention；
Figure 17 is the sectional view of another semiconductor subassembly in first embodiment of the invention；
Figure 18 is the sectional view of radiating seat in second embodiment of the invention；
Figure 19 is sectional view of the setting face towards surface semiconductor sub-assembly in Figure 18 structures in second embodiment of the invention；
Figure 20 is to be connect in Figure 19 structures in second embodiment of the invention and set closing line to complete cuing open for semiconductor device fabrication
View；
Figure 21 is that the sectional view of sealing material is formed in Figure 20 structures in second embodiment of the invention；
Figure 22 is that the sectional view for setting soldered ball is connect in Figure 21 structures in second embodiment of the invention；
Figure 23 is the sectional view of another semiconductor subassembly in second embodiment of the invention；
Figure 24 is to face surface semiconductor sub-assembly and radiating seat is pasted to section view on film carrier in third embodiment of the invention
Figure；
Figure 25 is that the sectional view for setting closing line is connect in Figure 24 structures in third embodiment of the invention；
Figure 26 is that the sectional view of sealing material is formed in Figure 25 structures in third embodiment of the invention；
Figure 27 is to remove film carrier from Figure 26 structures to complete the section view of semiconductor device fabrication in third embodiment of the invention
Figure；
Figure 28 is that the sectional view for setting heat-conducting plate is connect in Figure 27 structures in third embodiment of the invention；
Figure 29 is that the sectional view for setting soldered ball is connect in Figure 28 structures in third embodiment of the invention.
【Symbol description】
Semiconductor subassembly 110,120,130,210,220,310,320
Sacrifice support plate 10
Face surface semiconductor sub-assembly 20
First surface 201
Second surface 202
First routing circuit 21
Line route 212
Dielectric layer 215
Blind hole 216
First conducting wire 217
Metalized blind vias 218,365
First device 22
First convex block 223
Passive component 23
Metal column 24,323,324
Molding material 25
Second device 27,28
Second convex block 273
Radiating seat 30
Depression 305
Gap 306,336
Metallic plate 321
Protrude seat 325
Recess 326
Wear mouth 327
Secondary route circuit 33
Through opening 335
Junction film 341
Trepanning 342
It route substrate 351
Perforation 352
Insulating layer 353
Second conducting wire 354
Privates 355
Through metallized hole 356
Increasing layer insulating layer 361
Privates 364
Closing line 41,43
Sealing material 51
Soldered ball 61
Film carrier 70
Heat-conducting plate 81
Heat conduction adhesive agent 91
Specific implementation mode
Hereinafter, it will thus provide an embodiment is with the form of implementation that the present invention will be described in detail.Advantages of the present invention and work(
Effect will through the invention disclosure of that and it is more notable.Illustrate that appended schema is to simplify and used as illustrating herein.
Component count, shape and size can modify according to actual conditions shown in schema, and the configuration of component is likely more
It is complicated.Also otherwise practice or application can be carried out in the present invention, and without departing from spirit and scope defined in the present invention
Under the conditions of, various change and adjustment can be carried out.
[embodiment 1]
Fig. 1-13 is a kind of production method figure of semiconductor subassembly a comprising first via in first embodiment of the invention
By circuit 21, a first device 22, a molding material 25, a second device 27, a radiating seat 30 and closing line 41,43.
Fig. 1 is to sacrifice the sectional view that line route 212 is formed on support plate 10.The sacrifice support plate 10 usually by copper, aluminium, iron, nickel,
Tin, stainless steel, silicon or other metal or alloy are made, but any other conductive or non-conducting material can also be used to be made.Yu Ben
In embodiment, which is made by iron-bearing materials.Line route 212, and can be via various usually made by copper
Technology carries out patterned deposition, such as plating, electroless-plating, vapor deposition, sputter or combinations thereof, or is then carried out by film deposition
Metal pattern step and formed.For having the sacrifice support plate 10 of electric conductivity, deposited generally by metal plating mode, with
Form line route 212.Metal pattern technology includes wet etching, chemical etching, laser assisted etching and combinations thereof, and is used
Etching mask (not shown), to define line route 212.
Fig. 2 is the sectional view with dielectric layer 215 and blind hole 216, and dielectric layer 215, which is located at, sacrifices support plate 10 and routing
On line 212, and blind hole 216 is in dielectric layer 215.Dielectric layer 215 can generally be deposited by lamination or coating method, and be connect
It touches and sacrifices support plate 10 and line route 212, and dielectric layer 215 is covered and extended laterally by top in sacrifice support plate 10 and line route
On 212.Dielectric layer 215 usually with 50 microns of thickness, and can by epoxy resin, glass epoxy resin, polyimides or its
Made by analog.After dielectric layer 215, can by various technologies formed blind hole 216, as laser drill, electric paste etching,
And lithographic techniques, and usually with 50 microns of diameter.Pulse laser can be used to improve laser drill efficiency.Alternatively, can be used
Scanning laser beam, and metal mask of arranging in pairs or groups.Blind hole 216 extends through dielectric layer 215, and is directed at the selected portion of line route 212
Position.
With reference to figure 3, the first conducting wire 217 is formed on dielectric layer 215 by metal deposit and metal patterning processes.First
Conducting wire 217 extends upward from line route 212, and fills up blind hole 216, to form the metalized blind vias for being in direct contact line route 212
218, while extending laterally on dielectric layer 215.Therefore, the first conducting wire 217 can provide X and Y-direction horizontal signal route with
And the vertical routing across blind hole 216, using the electric connection as line route 212.
First conducting wire 217 can be deposited as single-layer or multi-layer by various technologies, such as plating, electroless-plating, vapor deposition, sputter or
A combination thereof.For example, so that dielectric layer 215 is generated with electroless copper by immersing the structure in activator solution first and touch
Matchmaker reacts, and then a coating thin copper layer is as seed layer in a manner of electroless-plating, then with plating mode by the of required thickness
Two layers of copper are formed on seed layer.Alternatively, before depositing copper electroplating layer on seed layer, which can be formed by sputtering way
Such as the crystal seed layer film of titanium/copper.Once reaching required thickness, you can coating is patterned using various technologies, to form the
One conducting wire 217, as wet etching, chemical etching, laser assisted etching and combinations thereof, and use etching mask (not shown), with
Define the first conducting wire 217.
This stage is completed in the technique for forming the first routing circuit 21 on sacrifice support plate 10.In this figure, the first via by
Circuit 21 is multilayer build-up circuitry comprising line route 212, dielectric layer 215 and the first conducting wire 217.
Fig. 4 is the sectional view that first device 22 is electrically coupled to the first routing circuit 21.First device 22 can by hot pressing,
Reflow or hot ultrasonic joining technique are electrically coupled to the first conducting wire 217 of the first routing circuit 21 via the first convex block 223,
Wherein the first convex block 223 contacts first device 22 and the first routing circuit 21.In this embodiment, which is depicted as
Semiconductor chip.
Fig. 5 is to form molding material 25 in the sectional view on the first routing circuit 21 and around first device 22, the wherein mould
Envelope material 25 can be formed by such as resin-glass laminates, resin-coated with glass or molding (molding) mode.The molding material 25 is
First routing circuit 21, and circular, similar shape coating and the side wall for covering first device 22 are covered by top.Alternatively, can also omit
The step of forming the molding material 25.
Fig. 6 is to remove the sectional view for sacrificing support plate 10.Sacrificing support plate 10 can remove by various modes, to be appeared by lower section
First routing circuit 21, such as using the wet type of acid solution (such as iron chloride, copper-bath) or alkaline solution (such as ammonia solution)
Chemical etching, chemical etching carry out chemical etching again after mechanical system (such as drilling or end mill).In this embodiment,
It can be removed by chemical etching liquor by the sacrifice support plate 10 made by iron-bearing materials, wherein chemical etching liquor is between copper and iron
With selectivity, copper line route 212 is caused to be etched to avoid the when of sacrificing support plate 10 is removed.
Fig. 7 is the sectional view that second device 27 is electrically coupled to the first routing circuit 21.Second device 27 can by hot pressing,
Reflow or hot ultrasonic joining technique, the line route 212 of the first routing circuit 21 is electrically coupled to via the second convex block 273,
In the second convex block 273 contact second device 27 and the first routing circuit 21.In this embodiment, which is depicted as half
Conductor chip.However, in certain examples, the second device 27 or packaging system or passive component.
The making for facing surface semiconductor sub-assembly 20 is completed in this stage comprising one first routing circuit 21, one first
Device 22, a molding material 25 and a second device 27.First device 22 and second device 27 be electrically coupled to respectively the first via by
The first surface 201 and second surface 202 of circuit 21, and the molding material 25 is set on first surface 201, and around the first dress
Set 22.
Fig. 8 is the structure sectional view that seat 325 is protruded with a metallic plate 321, metal column 323,324 and one.Metallic plate
321, metal column 323,324 and protrusion seat 325 are usually integrally formed, and can be by copper, aluminium, stainless steel or other metals or conjunction
Golden material is made.In this embodiment, the material of metallic plate 321, metal column 323,324 and protrusion seat 325 is copper.Metal column
323,324 and protrusion seat 325 by metallic plate 321 a surface protrude, and be typically formed by lithographic and wet etch process.
Fig. 9 to 10 is to be laminated to the technique sectional view on metallic plate 321 by substrate 351 is route using junction film 341.
This, the perforation 352 of routing substrate 351 and the trepanning 342 of junction film 341 are inserted by metal column 323,324 and protrusion seat 325, with
Carry out laminating technology.The trepanning 342 and perforation 352 are typically respectively by laser cutting through junction film 341 and routing base
Plate 351 and formed, also can know other modes by such as punching press or machine drilling by be formed.The junction film 341 can be had by a variety of
Machine or inorganic electrically insulating material are formed by various dielectric films or prepreg (prepregs) is constituted.In this figure, the road
It is a laminate by substrate 351 comprising an insulating layer 353, the second conducting wire 354, privates 355 and through metallized hole 356.Absolutely
Edge layer 353 usually has 50 microns of thickness, and can be by epoxy resin, glass epoxy resin, polyimides or its analog institute
It is made.Second conducting wire 354 and privates 355 are set on the two opposite sides of insulating layer 353.Through metallized hole 356 extends through
Insulating layer 353 is crossed, and is electrically coupled to the second conducting wire 354 and privates 355.
Under heat and pressure, the junction film 341 between metallic plate 321 and routing substrate 351 can be in molten state, and flow into metal
Gap between column 323,324 and routing substrate 351.Accordingly, junction film 341 can make metallic plate 321 and metal column 323,324 and road
Separated by substrate 351, and cure after junction film 341 can provide metallic plate 321 and routing substrate 351 between and metal column 323,
Secure mechanical between 324 and routing substrate 351 links.
This stage is completed in the technique for forming secondary route circuit 33 on metallic plate 321, the secondary route circuit 33 packet
Include junction film 341 and routing substrate 351.In this figure, metal column 323,324 and protrusion seat 325 extend through secondary route electricity
Road 33, and an exposed surface is all had, it is in substantially flat altogether in 355 outer surface of privates of lower section and routing substrate 351
Face.
Figure 11 is the sectional view for removing protrusion seat 325, to appear a selected position of metallic plate 321 by lower section.Protrude seat
325 can remove by various modes, to appear the selected position of metallic plate 321 through opening 335 by secondary route circuit 33,
Such as use wet chemical etch, the electrochemistry of acid solution (such as iron chloride, copper-bath) or alkaline solution (such as ammonia solution)
Etching carries out chemical etching again after mechanical system (such as drilling or end mill).
The making of radiating seat 30 is completed in this stage comprising a metallic plate 321, a series of metal columns 323,324 and one
Secondary route circuit 33.In this figure, the metallic plate 321 be appeared through 335 parts of opening by secondary route circuit 33, and
The metal column 323,324 is laterally surround by secondary route circuit 33.
Figure 12 is that Fig. 7 faces the sectional view that surface semiconductor sub-assembly 20 is pasted to Figure 11 radiating seats 30.This faces face and partly leads
Body sub-assembly 20 is aligned and is set to and is open in 335 running through for secondary route circuit 33, and first device 22 is made to be pasted to heat dissipation
The metallic plate 321 of seat 30.The internal side wall for running through opening 335 laterally faces periphery sides of surface semiconductor sub-assembly 20 around this
Edge, and the peripheral edge for facing with this surface semiconductor sub-assembly 20 is kept at a distance.Accordingly, 20 periphery of surface semiconductor sub-assembly is faced
There are positioned at the gap 336 in opening 335 between 33 internal side wall of edge and secondary route circuit.Gap 336 laterally around
This faces surface semiconductor sub-assembly 20, and secondary route circuit 33 is laterally around the gap 336.
Figure 13 is that closing line 41,43 is connected to the sectional view for facing surface semiconductor sub-assembly 20 and radiating seat 30, usually may be used
(wedge bonding) mode is engaged by gold or copper ball bond (ball bonding) or gold or aluminium wedge type, is connect with connecing to set
Zygonema 41,43.Closing line 41 contacts and is electrically coupled to the line route 212 and secondary route circuit 33 of first routing circuit 21
Privates 355, closing line 43 then contact and are electrically coupled to the line route 212 and metal column 323 of the first routing circuit 21.According to
This, the first routing circuit 21 can be electrically coupled to secondary route circuit 33 by closing line 41, be route with constituting signal, and closing line
First routing circuit 21 is electrically coupled to metal column 323 by 43, to constitute grounding connection.
Accordingly, as shown in figure 13, completed semiconductor subassembly 110 includes mutually electrically to be connected by closing line 41,43
What is connect faces surface semiconductor sub-assembly 20 and radiating seat 30.In this figure, it includes one first that this, which faces surface semiconductor sub-assembly 20,
Routing circuit 21, a first device 22, a molding material 25 and a second device 27, and the radiating seat 30 include a metallic plate 321,
Metal column 323,324 and a secondary route circuit 33.
First device 22 is to be electrically coupled to the first routing circuit by the side of the first routing circuit 21 with rewinding method
21, and surrounded by molding material 25 and metallic plate 321.Second device 27 is then by the other side of the first routing circuit 21, with flip
Mode is electrically coupled to the first routing circuit 21, and is connected with mutually facing face with first device 22 by the first routing circuit 21
It connects.Accordingly, the first routing circuit 21 can provide the primary most short interconnection being fanned out between routing and first device 22 and second device 27
Distance.The metallic plate 321 of radiating seat 30 and 22 hot conducting of first device, and first device 22 is covered by top.Metal column
323,324 protrude from a surface of metallic plate 321, and extend through secondary route circuit 33.Secondary route circuit 33 is not placed in
On the surface of metallic plate 321, and by closing line 41, it is electrically coupled to the first routing circuit 21, wherein closing line 41 and
One routing circuit 21 and secondary route circuit 33 contact.In addition, metallic plate 321 and metal column 323,324 be by closing line 43,
It is electrically connected to the first routing circuit 21, to constitute grounding connection, wherein closing line 43 and metal column 323 and the first routing circuit
21 contacts.Therefore, metallic plate 321 can not only provide first device 22 sinking path, and it is effective can also to provide first device 22
Electromagnetic shielding action.
Figure 14 is the sectional view that semiconductor subassembly 110 is additionally provided with sealing material 51.The sealing material 51 covers closing line by lower section
41,43 the selected position of surface semiconductor component 20 and radiating seat 30, is faced, and also further fill surface is towards surface semiconductor component 20
Gap 336 between 30 internal side wall of peripheral edge and radiating seat.
Figure 15 is the sectional view that semiconductor subassembly 110 is additionally provided with soldered ball 61.The soldered ball 61 is to connect to be placed in secondary route electricity
On road 33 and metal column 324, for external connection.
Figure 16 is the sectional view of another semiconductor subassembly in first embodiment of the invention.The semiconductor subassembly 120 and Figure 13
Shown structure is similar, but difference is in it further includes a passive component 23 that this, which faces surface semiconductor component 20, is electrically coupled to
First routing circuit 21, and radiating seat 30 is not provided with the metal column protruded from metallic plate 321.
Figure 17 is the sectional view of another semiconductor subassembly in first embodiment of the invention.The semiconductor subassembly 130 and Figure 13
Shown structure is similar, but difference is in there is the metallic plate 321 recess 326, alignment secondary route circuit 33 to run through
Opening 335, and face the recess 326 that surface semiconductor sub-assembly 20 more extends into metallic plate 321.
[embodiment 2]
Figure 18-20 is in second embodiment of the invention, and a kind of secondary route circuit is electrically coupled to the semiconductor of metal column
Assembly making method figure.
For the purpose of brief description, any narration for making same application, and need not and in this in above-described embodiment 1
Repeat identical narration.
Figure 18 is the sectional view of radiating seat 30.The radiating seat 30 is similar to structure shown in Figure 11, but difference is in this
Two routing circuits 33 further include an increasing layer insulating layer 361 and privates 364, wherein increasing layer insulating layer 361 be laminated/be coated on road
By on substrate 351 and metal column 323,324, and privates 364 are deposited on increasing layer insulating layer 361.Increasing layer insulating layer 361 connects
Touch routing substrate 351 and metal column 323,324, and covered by lower section and extend laterally in routing substrate 351 and metal column 323,
On 324.Increasing layer insulating layer 361 usually with 50 microns of thickness, and can by epoxy resin, glass epoxy resin, polyimides,
Or made by its analog.Privates 364 are to be deposited on increasing layer insulating layer 361 by metal deposit and metal patterning processes
On comprising there are the metalized blind vias 365 of contact routing 351 privates 355 of substrate and metal column 323,324, and the gold
Categoryization blind hole 365 extends through increasing layer insulating layer 361.
Figure 19 is the sectional view for facing surface semiconductor sub-assembly 20 and being pasted to Figure 18 radiating seats 30.This faces surface semiconductor
Component 20 is set in the depression 305 of radiating seat 30, and is pasted to the metallic plate 321 of radiating seat 30.In this figure, this faces face
Semiconductor sub-assembly 20 is similar to that shown in Fig. 7, but difference be in, further include a passive component 23 and a metal column 24, should
Metal column 24 is electrically coupled to the first routing circuit 21, and is surrounded by molding material 25.
Figure 20 is that closing line 41 is connected to the sectional view for facing surface semiconductor sub-assembly 20 and radiating seat 30.Closing line 41 contacts
And it is electrically coupled to the line route 212 of the first routing circuit 21 and the privates 364 of secondary route circuit 33.
Accordingly, as shown in figure 20, completed semiconductor subassembly 210 includes to be electrically connected with each other by closing line 41
Face surface semiconductor sub-assembly 20 and radiating seat 30.In this figure, this face surface semiconductor sub-assembly 20 include a first via by
Circuit 21, a first device 22, a passive component 23, a metal column 24, a molding material 25 and a second device 27, and the heat dissipation
Seat 30 includes a metallic plate 321, metal column 323,324 and a secondary route circuit 33.
22/ passive component 23 of first device and second device 27 are respectively arranged at the two opposite sides of the first routing circuit 21
Place, and by the first routing circuit 21 between the two, be electrically connected with each other with facing face.Accordingly, the first routing circuit 21 can carry
For the most short interconnection distance between 22/ passive component 23 of first device and second device 27, and to 22/ passive component 23 of first device
The first order, which is provided, with second device 27 is fanned out to routing.The metal column 24 is electrically coupled to the first routing circuit 21, and extends through
Molding material 25.The metallic plate 321 is electrically connected to metal column 24, with grounding connection, and with 22 hot conducting of first device, to reach
At heat dissipation.Metal column 323,324 is protruded from metallic plate 321, and the secondary route circuit 33 being electrically coupled on metallic plate 321,
With grounding connection.Secondary route circuit 33 is electrically coupled to the first routing circuit 21 by closing line 41, with to the first via by electricity
Road 21 provides the second level and is fanned out to routing.
Figure 21 is the sectional view that semiconductor subassembly 210 is additionally provided with sealing material 51.The sealing material 51 covers closing line by lower section
41, second device 27, the selected position of the first routing circuit 21 and secondary route circuit 33, and also further fill surface is towards face half
Gap 336 between 30 internal side wall of 20 peripheral edge of conductor assembly and radiating seat.
Figure 22 is the sectional view that semiconductor subassembly 210 is additionally provided with soldered ball 61.The soldered ball 61 is to connect to be placed in secondary route electricity
On road 33, for external connection.
Figure 23 is the sectional view of another semiconductor subassembly in second embodiment of the invention.The semiconductor subassembly 220 and Figure 21
Shown structure is similar, but difference is in there is the metallic plate 321 recess 326, alignment secondary route circuit 33 to run through
Opening 335, and face surface semiconductor sub-assembly 20 and also extend into the recess 326 of metallic plate 321, and include multiple second devices
27,28 (being depicted as passive component) is electrically coupled to the first routing circuit 21.
[embodiment 3]
Figure 24-27 is in third embodiment of the invention, and the production method figure of another semiconductor subassembly, metallic plate has
Mouth is worn, and this is worn and is open running through for mouth alignment secondary route circuit.
For the purpose of brief description, any narration for making same application, and need not and in this in above-described embodiment
Repeat identical narration.
Figure 24 is to face surface semiconductor sub-assembly 20 and radiating seat 30 is pasted to the sectional view of film carrier 70.This faces face and partly leads
Body sub-assembly 20 is similar to structure shown in Fig. 7, but difference is in further including a passive component 23, and the passive component 23
It is electrically coupled to the first routing circuit 21, and is surrounded by molding material 25.The radiating seat 30 is similar to structure shown in Figure 11, but different
It is in the metallic plate 321 of radiating seat 30, which has, wears mouth 327, and alignment secondary route circuit 33 runs through opening 335.Film carrier
70 be usually an adhesive plaster, and can provide temporary fixed force, makes to face surface semiconductor sub-assembly 20 and is seated firmly on secondary route
Circuit 33 through open 335 and metallic plate 321 wear in mouth 327.In this figure, this faces surface semiconductor sub-assembly 20 and heat dissipation
Seat 30 is to be attached at film carrier 70 by the stickiness of film carrier 70, and first device 22, molding material 25 and metallic plate 321 contact film carrier
70.Alternatively, additional adhesive agent can be coated with, so as to face surface semiconductor sub-assembly 20 and radiating seat 30 is attached at film carrier 70.
Figure 25 is that closing line 41,43 is connected to the sectional view for facing surface semiconductor sub-assembly 20 and radiating seat 30.Closing line 41
Contact and be electrically coupled to the line route 212 of the first routing circuit 21 and the privates 355 of secondary route circuit 33, closing line
43 line routes 212 and metal column 323 for contacting and being electrically coupled to the first routing circuit 21.
Figure 26 is the sectional view that sealing material 51 is arranged.The sealing material 51 by lower section covering closing line 41,43, face face and partly lead
The selected position of body sub-assembly 20 and radiating seat 30.In addition, the sealing material 51, which is also filled up, faces 20 periphery of surface semiconductor sub-assembly
Gap 306 between 30 internal side wall of edge and radiating seat.Accordingly, which can provide firm mechanical engaging force, so that
The peripheral edge for facing surface semiconductor sub-assembly 20 is pasted to the internal side wall of radiating seat 30.Alternatively, can in formed closing line 41,
43 and sealing material 51 before, be coated with additional adhesive agent in gap 306 so that face surface semiconductor sub-assembly 20 peripheral edge patch
It is attached to the internal side wall of radiating seat 30.
Figure 27 is the sectional view removed after film carrier 70.Film carrier 70 is moved by facing surface semiconductor sub-assembly 20 and radiating seat 30
It removes, to appear first device 22 and metallic plate 321 by top.Accordingly, completed semiconductor subassembly 310 faces face half including one
Conductor sub-assembly 20, a radiating seat 30, closing line 41,43 and a sealing material 51.In this figure, this faces surface semiconductor sub-assembly
20 include one first routing circuit 21, a first device 22, a passive component 23, a molding material 25 and a second device 27, and
The radiating seat 30 includes a metallic plate 321, metal column 323,324 and a secondary route circuit 33.
Figure 28 is the sectional view of another semiconductor subassembly in third embodiment of the invention.To reach effective heat dissipation, can usually lead to
Heat conduction adhesive agent 91 is crossed, a heat-conducting plate 81 is further pasted to the first device 22 and molding for facing surface semiconductor sub-assembly 20
On the metallic plate 321 of material 25 and radiating seat 30.The heat-conducting plate 81 can made by any material with high-termal conductivity, as copper,
Aluminium, stainless steel, silicon, ceramics, graphite or other metal or alloy.Therefore, heat caused by first device 22 can pass through heat-conducting plate
81 dissipations outward.
Figure 29 is the sectional view that semiconductor subassembly 320 is additionally provided with soldered ball 61.The soldered ball 61 is to connect to be placed in secondary route electricity
On road 33 and metal column 324, for external connection.
Above-mentioned semiconductor subassembly is only illustrative example, and the present invention is still realized by other various embodiments.In addition, above-mentioned
Embodiment can be based on the considerations of design and reliability, and the collocation that is mixed with each other is used using or with other embodiment mix and match.It lifts
For example, secondary route circuit may include being arranged in the multiple through opening of array shape, and each face surface semiconductor time group
It is corresponding in opening that part is placed in its.In addition, the secondary route circuit of radiating seat may include extra lead, it is additional to connect
Face surface semiconductor sub-assembly.
Shown in embodiment as above, the present invention builds up a kind of unique semiconductor subassembly comprising mutual by closing line
Electric property coupling faces surface semiconductor sub-assembly and radiating seat.Further include optionally a sealing material, to cover closing line.For
Conveniently be described below, herein by the first surface of the first routing circuit towards direction be defined as first direction, and the first via
By circuit second surface towards direction be defined as second direction.
It includes a first device, a second device, one first routing circuit and selectivity that this, which faces surface semiconductor sub-assembly,
Molding material.The sub-assembly can be made up of following step：First device is electrically coupled to the first table of the first routing circuit
Face, wherein the first routing circuit be detachable connect and be placed on a sacrifice support plate；Selectivity provides a molding material in the first via
By on circuit and around first device；It is removed from the first routing circuit and sacrifices support plate；And second device is electrically coupled to
The second surface of one routing circuit.Accordingly, it is respectively arranged at first and second on first and second surface of the first routing circuit
Device can be electrically connected with each other by the first routing circuit.
First device can be semiconductor chip, and second device can be semiconductor chip, packaging system or passive component.
Here, first device can utilize existing chip bonding technique, in such a way that active surface is towards the first routing circuit, pass through convex block electricity
Property be coupled to the first routing circuit, and do not have metalized blind vias contact first device.Similarly, main after removing sacrifice support plate
Existing chip bonding technique can also be used in the dynamic second device facing towards the first routing circuit, and first is electrically coupled to by convex block
Routing circuit, and do not there is metalized blind vias to contact second device.
First routing circuit can be the build-up circuitry for not having core layer, and tentatively routing/interconnection and first are fanned out to provide
And the most short interconnection distance between second device.Preferably, which is multilayer build-up circuitry, may include at least one
Dielectric layer and conducting wire, the conducting wire fills up the blind hole in dielectric layer, and extends laterally on dielectric layer.Dielectric layer is to connect with conducting wire
It is continuous to be formed in turn, and repeat and formed if needing.Accordingly, the first routing circuit is formed at first surface and second surface
Electrical contact so that first device is connected from first surface, and connects for second device or next stage connector from second surface
It connects.
The radiating seat include a metallic plate, a secondary route circuit on a surface of metallic plate and one or more selection
Property metal column protruded from the surface of metallic plate, and the secondary route circuit is laterally around the metal column.Preferably, the metallic plate
It is integrally formed with the selective metal column.In one embodiment of the invention, it is to be placed in that this, which faces surface semiconductor sub-assembly,
Two routing circuits in opening, and be pasted to the surface of metallic plate, and face surface semiconductor sub-assembly peripheral edge with
There are gaps between open interior side wall.Alternatively, the metallic plate can have a recess, alignment secondary route circuit to run through
Opening, and be set to and face surface semiconductor sub-assembly in opening, while being also inserted into the recess of metallic plate, and be pasted to
Metallic plate.Accordingly, the hot conducting of the metallic plate of first device and radiating seat, and the internal side wall of radiating seat is laterally around the first via
By the dielectric layer peripheral edge of circuit.In another embodiment of the present invention, which has one to wear mouth, and alignment, which runs through, opens
Mouthful, and metallic plate is extended through, and film carrier (being usually adhesive plaster) can be used, to be carried to facing surface semiconductor sub-assembly and radiating seat
For temporary fixed force.For example, the film carrier can temporarily be attached at the metallic plate for facing surface semiconductor sub-assembly and radiating seat,
With will face surface semiconductor sub-assembly be fixed on secondary route circuit through opening and metallic plate wear in mouth；Then, sealing is provided
Material, which covers closing line and inserts, faces surface semiconductor sub-assembly peripheral edge and through the gap for being open and wearing between mouthful internal side wall
Afterwards, then film carrier is removed.Alternatively, can be open and wear in facing surface semiconductor sub-assembly peripheral edge and running through before removing film carrier
Gap between mouth internal side wall is coated with adhesive agent.Accordingly, the adhesive agent or sealing material can provide firm mechanical engaging force, so that
The peripheral edge for facing surface semiconductor sub-assembly is pasted to the internal side wall of radiating seat.Being somebody's turn to do for mouth is worn in addition, being equipped in metallic plate
In embodiment, a heat-conducting plate can be pasted to the metallic plate of radiating seat and radiating seat wears mouth and the sub-assembly in opening.According to
This, which can provide sinking path to the first device for being pasted to heat-conducting plate.
Secondary route circuit can be the multilayer routing circuit for including an at least insulating layer and conducting wire.Insulating layer is with conducting wire
It is continuously formed in turn, and repeats and formed if needing.In a preferred embodiment, secondary route circuit include a junction film and
One routing substrate.The routing substrate preferably includes an insulating layer, conducting wire and through metallized hole, and wherein conducting wire is located at the phase of insulating layer
On anti-both sides, and through metallized hole extends through insulating layer, to provide the electric connection between the conducting wire of both sides.The junction film can should
Routing substrate is bonded to the metallic plate and selective metal column of radiating seat.More specifically, the selective metal column of the radiating seat
It is disposed in the perforation of routing substrate, and the junction film between metallic plate and routing substrate can partly be got into and insert selectivity
It is located at the gap in perforation between metal column and routing substrate.Therefore, junction film can be provided between metallic plate and routing substrate and be selected
Property metal column and routing substrate between consolidate mechanicalness link.The secondary route circuit further includes optionally an at least increasing layer
Insulating layer and extra lead, the extra lead fill up the blind hole in increasing layer insulating layer, and extend laterally on increasing layer insulating layer.
To carry out grounding connection, which can be electrically coupled to metallic plate and selective metal column.For example, by connecing
The secondary route circuit that zygonema is electrically connected to the first routing circuit may include metalized blind vias, be located in increasing layer insulating layer,
And contact the selective metal column of radiating seat.Alternatively, selective metal column can extend across secondary route circuit, and pass through engagement
Line is electrically connected to the first routing circuit of sub-assembly.Accordingly, metallic plate and selective metal column can be electrically coupled to the first via
By circuit.In addition, the outermost layer conductor of secondary route circuit can house conductive junction point, such as soldered ball, with next level assembly or separately
Electrically transmission and the mechanicalness connection of one electronic building brick.
Closing line provides the electric connection between the first routing circuit and the secondary route circuit of radiating seat of sub-assembly.Yu Yi
In preferred embodiment, the closing line contacts and connects the first routing circuit for being placed in and appearing from secondary route circuit through opening
Two surfaces and backwards the secondary route circuit outer surface of metallic plate.Accordingly, first and second device can pass through the first routing circuit
And closing line, it is electrically connected to the secondary route circuit for external connection.
" covering " word refers to incomplete in vertical and/or side surface direction and is completely covered.For example, preferred real in one
It applies in example, heat-conducting plate is to cover first device in first direction, no matter whether another component such as heat conduction adhesive agent is located at first
Between device and heat-conducting plate.
" on being attached at ... " and " on connecing and be placed in ... " word include with the contact of single or multiple inter-module with it is non-contact.
For example, in a preferred embodiment, the peripheral edge for facing surface semiconductor sub-assembly is pasted to radiating seat through opening and wears mouth
Internal side wall, no matter whether the peripheral edge of sub-assembly is separated by with the internal side wall of radiating seat with an adhesive agent or sealing material.
The word of " electric connection " and " electric property coupling " means directly or indirectly to be electrically connected.For example, being preferably implemented in one
In example, closing line is in direct contact and is electrically connected to secondary route circuit, and the first routing circuit is protected with secondary route circuit
Distance is held, and secondary route circuit is electrically connected to by closing line.
" first direction " and " second direction " is not dependent on the orientation of semiconductor subassembly, and those skilled in the art can be light
Its readily apparent practical signified direction.For example, the first surface of the first routing circuit is to face first direction, and the first via is by electricity
The second surface on road is to face second direction, and it is unrelated whether this is inverted with semiconductor subassembly.Therefore, which is
It is opposite each other and perpendicular to side surface direction.Furthermore when secondary route circuit appearance is face-down, first direction is upward direction,
Second direction is in downward direction；When secondary route circuit appearance is face-up, first direction is in downward direction that second direction is upward
Direction.
The semiconductor subassembly of the present invention has many advantages.For example, first and second device is connect and is placed in the first via
By in the opposite sides of circuit, shortest interconnection distance can be provided between first device and second device.First routing circuit can
It is fanned out to routing/interconnection to what first and second device provided the first order, and what secondary route circuit can provide the second level is fanned out to road
By/interconnection.Since the first routing circuit of sub-assembly is the secondary route circuit for being connected to radiating seat by closing line, without
It is directly to be attached by increasing layer technique, so the processing step simplified can reduce cost of manufacture.Radiating seat can provide first
Heat dissipation, electromagnetic shielding and the moisture barrier of device, and the mechanical support power of component is provided.It is prepared by the method
Semiconductor subassembly be reliability it is high, it is cheap and be very suitable for largely manufacture produce.
The production method of the present invention has high applicability, and the various maturations of R. concomitans in a manner of unique, progressive
Electrical and mechanicalness interconnection technique.In addition, the production method of the present invention is not required to expensive tool and can implement.Therefore, compared to biography
Yield, qualification rate, efficiency and cost-effectiveness can be substantially improved in system technology, this production method.
Embodiment described herein is used to illustrate, wherein the embodiment may simplify or omit the art
Well known component or step, in order to avoid the fuzzy features of the present invention.Similarly, to keep schema clear, schema may also omit repetition
Or non-essential component and component symbol.
Claims (8)
1. a kind of three-dimensional heat-dissipating gain-type semiconductor subassembly integrated, which is characterized in that it includes：
One faces surface semiconductor sub-assembly comprising a first device, a second device and one first routing circuit, wherein this
One device is electrically coupled to a first surface of first routing circuit, and the second device is electrically coupled to the first via by electricity
One opposite second surface on road；
One radiating seat a comprising metallic plate and a secondary route circuit, the secondary route circuit are set to the one of the metallic plate
On surface, wherein the secondary route circuit have one through opening, and this face surface semiconductor sub-assembly be set to should run through open
In mouthful, and the first device is made to be pasted to the radiating seat, and the second surface of first routing circuit and secondary route electricity
One outer surface on road is in the same direction；And
This is faced surface semiconductor sub-assembly electricity by a plurality of closing line by first routing circuit and the secondary route circuit
Property is coupled to the radiating seat.
2. semiconductor subassembly as described in claim 1, which is characterized in that wherein, which further includes a metal column, straight
Connect the surface protrusion by the metallic plate.
3. semiconductor subassembly as described in claim 1, which is characterized in that wherein, which wears mouth with a recess or one,
It, which is aligned, was open should running through for the secondary route circuit.
4. semiconductor subassembly as described in claim 1, which is characterized in that further include：One molding material, around first dress
It sets, and covers the first surface of first routing circuit.
5. semiconductor subassembly as described in claim 1, which is characterized in that further include：One sealing material covers the engagement
Line.
6. semiconductor subassembly as described in claim 1, which is characterized in that wherein, which is semiconductor chip, and
The second device is semiconductor chip, one packaging system or a passive component.
7. a kind of production method of the three-dimensional heat-dissipating gain-type semiconductor subassembly integrated, which is characterized in that it includes：
It provides one and faces surface semiconductor sub-assembly comprising a first device, a second device and one first routing circuit, wherein
The first device is electrically coupled to a first surface of first routing circuit, and the second device is electrically coupled to the first via
By an opposite second surface of circuit；
There is provided a radiating seat comprising a metallic plate and a secondary route circuit, the secondary route circuit are set to the metallic plate
A surface on and with one through opening；
This is faced into surface semiconductor sub-assembly and is set to should running through in opening for the secondary route circuit；And
A plurality of closing line is provided, electric property coupling this face surface semiconductor sub-assembly and the radiating seat.
8. production method as claimed in claim 7, which is characterized in that further include：One sealing material is provided, the engagement is covered
Line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710066338.0A CN108400117A (en) | 2017-02-06 | 2017-02-06 | The heat-dissipating gain-type semiconductor subassembly and preparation method thereof that three-dimensional is integrated |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710066338.0A CN108400117A (en) | 2017-02-06 | 2017-02-06 | The heat-dissipating gain-type semiconductor subassembly and preparation method thereof that three-dimensional is integrated |
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| CN108400117A true CN108400117A (en) | 2018-08-14 |
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