CN101578387B - 溅射靶 - Google Patents

溅射靶 Download PDF

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Publication number
CN101578387B
CN101578387B CN2008800018239A CN200880001823A CN101578387B CN 101578387 B CN101578387 B CN 101578387B CN 2008800018239 A CN2008800018239 A CN 2008800018239A CN 200880001823 A CN200880001823 A CN 200880001823A CN 101578387 B CN101578387 B CN 101578387B
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CN
China
Prior art keywords
target
cut apart
apart
sputtering target
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008800018239A
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English (en)
Chinese (zh)
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CN101578387A (zh
Inventor
古贺阳一
池东求
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Mining and Smelting Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Publication of CN101578387A publication Critical patent/CN101578387A/zh
Application granted granted Critical
Publication of CN101578387B publication Critical patent/CN101578387B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN2008800018239A 2007-08-31 2008-08-19 溅射靶 Active CN101578387B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007225707A JP5228245B2 (ja) 2007-08-31 2007-08-31 スパッタリングターゲット
JP225707/2007 2007-08-31
PCT/JP2008/064717 WO2009028347A1 (fr) 2007-08-31 2008-08-19 Cible de pulvérisation cathodique

Publications (2)

Publication Number Publication Date
CN101578387A CN101578387A (zh) 2009-11-11
CN101578387B true CN101578387B (zh) 2011-06-08

Family

ID=40387072

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800018239A Active CN101578387B (zh) 2007-08-31 2008-08-19 溅射靶

Country Status (5)

Country Link
JP (1) JP5228245B2 (fr)
KR (1) KR101110801B1 (fr)
CN (1) CN101578387B (fr)
TW (1) TWI383060B (fr)
WO (1) WO2009028347A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101733495B (zh) * 2009-11-11 2012-09-19 宁波江丰电子材料有限公司 拼接靶材形成方法
JP4723668B2 (ja) * 2009-12-25 2011-07-13 Ｊｘ日鉱日石金属株式会社 ターゲットバッキングプレート組立体
CN101921989A (zh) * 2010-06-30 2010-12-22 昆山工研院新型平板显示技术中心有限公司 一种可提高溅射工艺靶材利用率的方法
KR20140054224A (ko) * 2011-08-25 2014-05-08 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링 장치 및 방법
JP5995419B2 (ja) * 2011-09-01 2016-09-21 株式会社東芝 スパッタリングターゲット及びそれを用いた磁気メモリの製造方法
CN117821910A (zh) * 2016-06-16 2024-04-05 应用材料公司 用于真空沉积工艺中在基板上进行材料沉积的设备、用于基板上进行溅射沉积的系统和制造用于在基板上进行材料沉积的设备的方法
CN106337167A (zh) * 2016-08-30 2017-01-18 芜湖映日科技有限公司 多片拼接靶材绑定方法
JP6960989B2 (ja) * 2017-03-31 2021-11-05 三井金属鉱業株式会社 分割スパッタリングターゲット
CN112059345B (zh) * 2020-08-31 2022-07-15 宁波江丰电子材料股份有限公司 一种高纯铝靶材组件的钎焊方法及高纯铝靶材组件
CN112831763B (zh) * 2020-12-25 2022-02-11 安徽立光电子材料股份有限公司 一种靶材再生处理及粘靶方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1952208A (zh) * 2006-08-25 2007-04-25 上海贺利氏工业技术材料有限公司 一种磁控溅射镀膜用低熔点金属与背板加工工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3760652B2 (ja) * 1999-01-08 2006-03-29 東ソー株式会社 多分割スパッタリングターゲット
JP4470029B2 (ja) * 1999-06-01 2010-06-02 東ソー株式会社 分割ｉｔｏスパッタリングターゲット
JP4599688B2 (ja) * 2000-08-04 2010-12-15 東ソー株式会社 スパッタリングターゲットの製造方法
JP2003155563A (ja) * 2001-11-20 2003-05-30 Tosoh Corp 長尺多分割ｉｔｏスパッタリングターゲット
JP4318439B2 (ja) * 2002-08-26 2009-08-26 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
JP4376637B2 (ja) * 2004-01-14 2009-12-02 Ｈｏｙａ株式会社 スパッタリングターゲット及びこれを用いたマスクブランクの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1952208A (zh) * 2006-08-25 2007-04-25 上海贺利氏工业技术材料有限公司 一种磁控溅射镀膜用低熔点金属与背板加工工艺

Also Published As

Publication number Publication date
TW200925306A (en) 2009-06-16
KR101110801B1 (ko) 2012-03-15
CN101578387A (zh) 2009-11-11
TWI383060B (zh) 2013-01-21
JP5228245B2 (ja) 2013-07-03
KR20090085675A (ko) 2009-08-07
JP2009057598A (ja) 2009-03-19
WO2009028347A1 (fr) 2009-03-05

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Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210422

Address after: Japan Osaki Tokyo Shinagawa, a chome 11 times 1

Patentee after: MITSUI MINING & SMELTING Co.,Ltd.

Address before: Han Guojingjidao

Patentee before: MITSUI KINZOKU KOREA Co.,Ltd.