CN101577211A - 抗等离子体腐蚀的反应室部件、其制造方法以及包含该部件的等离子体反应室 - Google Patents
抗等离子体腐蚀的反应室部件、其制造方法以及包含该部件的等离子体反应室 Download PDFInfo
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- CN101577211A CN101577211A CNA2008100371646A CN200810037164A CN101577211A CN 101577211 A CN101577211 A CN 101577211A CN A2008100371646 A CNA2008100371646 A CN A2008100371646A CN 200810037164 A CN200810037164 A CN 200810037164A CN 101577211 A CN101577211 A CN 101577211A
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Cited By (8)
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CN104203395A (zh) * | 2012-03-20 | 2014-12-10 | 埃克森美孚化学专利公司 | 用于热解反应器的热隔离组件 |
CN104347389A (zh) * | 2013-07-23 | 2015-02-11 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀方法 |
CN104715994A (zh) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法 |
CN109738481A (zh) * | 2018-11-27 | 2019-05-10 | 武汉嘉仪通科技有限公司 | 一种薄膜材料的赛贝克系数测量装置及方法 |
CN110344024A (zh) * | 2018-04-06 | 2019-10-18 | 应用材料公司 | 区控制的稀土氧化物ald和cvd涂层 |
CN112376029A (zh) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | 等离子体浸没离子注入设备 |
CN113795473A (zh) * | 2019-04-05 | 2021-12-14 | 贺利氏科纳米北美有限责任公司 | 用于蚀刻应用的受控孔隙率氧化钇 |
CN116120085A (zh) * | 2023-02-14 | 2023-05-16 | 广东工业大学 | 一种等离子表面刻蚀结合玻璃陶瓷连接SiC陶瓷的方法及其制得的陶瓷连接件和应用 |
Family Cites Families (2)
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US5336454A (en) * | 1993-03-26 | 1994-08-09 | Advanced Ceramics Corporation | Ceramic composite and method |
US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
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Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104203395A (zh) * | 2012-03-20 | 2014-12-10 | 埃克森美孚化学专利公司 | 用于热解反应器的热隔离组件 |
CN104347389A (zh) * | 2013-07-23 | 2015-02-11 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀方法 |
CN104347389B (zh) * | 2013-07-23 | 2017-07-21 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀方法 |
CN104715994A (zh) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法 |
CN104715994B (zh) * | 2013-12-13 | 2017-08-25 | 中微半导体设备(上海)有限公司 | 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法 |
CN110344024A (zh) * | 2018-04-06 | 2019-10-18 | 应用材料公司 | 区控制的稀土氧化物ald和cvd涂层 |
CN110344024B (zh) * | 2018-04-06 | 2022-04-08 | 应用材料公司 | 区控制的稀土氧化物ald和cvd涂层 |
US12049696B2 (en) | 2018-04-06 | 2024-07-30 | Applied Materials, Inc. | Plasma resistant process chamber lid |
CN109738481A (zh) * | 2018-11-27 | 2019-05-10 | 武汉嘉仪通科技有限公司 | 一种薄膜材料的赛贝克系数测量装置及方法 |
CN113795473A (zh) * | 2019-04-05 | 2021-12-14 | 贺利氏科纳米北美有限责任公司 | 用于蚀刻应用的受控孔隙率氧化钇 |
CN112376029A (zh) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | 等离子体浸没离子注入设备 |
WO2022100538A1 (zh) * | 2020-11-11 | 2022-05-19 | 北京北方华创微电子装备有限公司 | 等离子体浸没离子注入设备 |
CN112376029B (zh) * | 2020-11-11 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 等离子体浸没离子注入设备 |
TWI806230B (zh) * | 2020-11-11 | 2023-06-21 | 大陸商北京北方華創微電子裝備有限公司 | 電漿浸沒離子注入設備 |
CN116120085A (zh) * | 2023-02-14 | 2023-05-16 | 广东工业大学 | 一种等离子表面刻蚀结合玻璃陶瓷连接SiC陶瓷的方法及其制得的陶瓷连接件和应用 |
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Denomination of invention: Reaction chamber component resisting plasma corrosion, preparation method thereof and plasma reaction chamber comprising same Effective date of registration: 20150202 Granted publication date: 20110720 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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Date of cancellation: 20170809 Granted publication date: 20110720 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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