201036086 六、發明說明： 【發明所屬之技術領域】 本發明涉及半導體工聽理設備，尤其涉及一種用於電 漿反應室之抗f漿雜之反應室部件、其製造方法以及包含 該部件之電漿反應室。 【先前技術】 半導體制程包括-系列制程步驟，以於一半導體襯底'基 ❹ #或“上製造ώ許奴躺频f路。電狀應室被廣泛 地用於半導體製造中。為了在電漿反應室中產生電聚，該電 漿反應室内部需要被抽成真空，然後再注入前驅氣體，並將 射頻此置輕合到電聚反應室内’再將前驅氣體激發到電漿狀 態’從而在半導體襯底、基片或晶片上處理各種物質層。然 而在電衆反應室的處理過程巾，電聚反應室的某些部件表面 會暴露在賴巾，制不同程度的賴雜。比如，在電聚 侧處理難中，f狀應㈣某些部件表騎暴露在電聚 ❹ 侧氣财，這些絲之表®常常會被那些賴侧氣體所 腐姓，例如常被用作蝕刻氣體的CF4，C4F8等含鹵化合物， 其月b迅速地腐餘反應室的部件表面。反應室部件表面的腐钱 是不被期望的，因為被腐蝕部件的粒子經常從部件剝落，落 在處理室中正被處理的襯底、基片或晶片上，從而造成污染。 為瞭解決這一問題，美國公開專利申請第2〇〇4〇〇〇2221 號及第2005147852號、美國公告專利第68〇5952號、第 4516餘第6783863齡別揭示了在電聚反應室部件上 塗一層金屬氧化物陶瓷保護塗層，例如氧化釔、氧化鋁等來 3 201036086 達到防止電漿腐蝕的目的。這些陶瓷保護塗層往往通過等離 子噴塗、熱喷塗、濺射或者是化學氣相沉積的方法而應用到 所需保護的電漿反應室部件上。然而，這些抗腐#塗層會受 到自身生命週期的限制，其主要原因是塗層的密度與厚度有 限。另外，當這些塗層被用於氣體喷淋頭時，現有的喷塗方 法报難做到在氣體喷淋頭的喷淋孔内均勻地喷塗所述防腐蝕 塗層’並同時不堵住氣體喷淋頭的喷灑口。 Ο 因此，為瞭解決電漿反應室部件中塗層所帶來的氣體喷 淋頭的生命週期限制等問題，美國公開專利申請第 20050056218號提出了一種新型的氣體噴淋頭，該種氣體喷淋 頭整個主體全部由含固體氧化釔的基體（solid yttrium 〇xide-Comprising substrate)製成。顯然，該種氣體喷淋 頭可以克服塗層自身密度解度不足_題，也很好地避免 了喷灑口被堵住的問題。然而該種氣體喷淋頭由於具有高之 ❹ 電阻率，因而無法被有效地用作電漿反應室内的射頻通路。 其原因疋咼之電阻率具有高的阻抗，其會阻礙射頻信號的導 通或者將射頻能量消耗掉。例如，在電容耦合型的電漿反應 室中，氣體喷淋頭通常被作為上電極並接地，與喷淋頭相對 的基片支座通常被作為下電極並與射頻源相連接，在電漿蝕 刻過程中，如果該被作為射頻通路的氣體喷淋頭具有高之電 阻率，則結果很顯然，射頻信號可能無法導通，或者射頻能 s被大量消耗掉，從而大大降低了射頻信號導通的效率。 【發明内容】 201036086 本發明之目的在於提供一種抗電漿腐钱之反應室部件， 其克服了财技躺不足，解決了現有麟巾反應室部件阻 礙射頻信號導通的問題。 本發明之另一目的在於提供一種電漿反應室，其包括有 利於射頻彳§號導通的抗電漿腐蚀之反應室部件。 本發明之又一目的在於提供一種抗電漿腐蝕之反應室部 件之製造方法’翔以製造—種利於射頻信號導通的反應室 部件。 本發明可以通過以下方式實現： 一種用於電漿反應室之抗電漿腐蝕之反應室部件，其至 暴露於所述電漿反應室内產生之錢中，所述 反應室部件由氧她材料和少量摻雜元素製成 ，並具有低於 10歐姆-釐米之電阻率。 本發明還提供一種製造電漿反應室的抗電漿腐蝕之反 ❹ 應室部件之方法，其包括： (1) 將氧化紀材料和少量摻雜元素經過熱壓或燒結形成 具有電阻率小於10歐姆—釐米之導電基體； (2) 加工所述導電基體’製成所述反應室部件。 本發明進一步提供一種電漿反應室，包括反應室部件， 所述電漿反應室在工作時於其内產生有電漿，所述反應室部 件具有暴露於所述電漿之至少―表面，其特徵在於：所述反 應至。P件之電轉小於1Q歐姆_鮮，其成份為氧化記和少 201036086 量摻雜讀，且所述反應室料在㈣反應室卫 射頻通路。 最f ’本發明還提供一種用於電聚反應室之抗電漿腐颠 之反應室部件’其至少包括相互連接在一_第—導電基體 和第二導電基體’所述第—導電基體為導電材料，所述第二 導電基體具有至少—表縣露於f針，並由做率低於^ 歐姆-釐米之氧化釔材料和少量摻雜元素製成。201036086 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor work equipment, and more particularly to a reaction chamber component for a plasma reaction chamber, a method of manufacturing the same, and an electric power including the same Pulp reaction chamber. [Prior Art] The semiconductor process includes a series of process steps for a semiconductor substrate 'base' or "on the fabrication of a slaving circuit. The electrical chamber is widely used in semiconductor manufacturing. Electrochemical polymerization is generated in the slurry reaction chamber, the interior of the plasma reaction chamber needs to be evacuated, and then the precursor gas is injected, and the radio frequency is lightly coupled into the electropolymerization reaction chamber to "excite the precursor gas to the plasma state". Various material layers are processed on a semiconductor substrate, substrate or wafer. However, in the process chamber of the electric reaction chamber, the surface of some components of the electropolymerization reaction chamber may be exposed to the diaper, to a different degree. In the difficult treatment of the electropolymerization side, the f-like shape should be used. (4) Some parts of the watch are exposed to the side of the electricity gathering. These wire sheets are often eroded by those gases, such as those used as etching gases. A halogen-containing compound such as CF4, C4F8, etc., which quickly rots the surface of the parts of the reaction chamber. The decay of the surface of the reaction chamber component is not expected because the particles of the corroded component often peel off from the component and fall into the processing chamber. Be Contamination on the substrate, substrate or wafer, in order to solve this problem, in order to solve this problem, U.S. Patent Application Nos. 2,222,222 and 2005147852, and U.S. Patent No. 68,5952, No. 4516, No. 6,784,863, discloses the application of a metal oxide ceramic protective coating on the components of the electropolymerization chamber, such as yttrium oxide, aluminum oxide, etc. 3 201036086 to prevent plasma corrosion. These ceramic protective coatings often pass Plasma spray, thermal spray, sputtering or chemical vapor deposition methods are applied to the plasma chamber components to be protected. However, these anti-corrosion coatings are subject to their own life cycle limitations, the main reason It is the density and thickness of the coating is limited. In addition, when these coatings are used in gas sprinklers, the existing spraying method is difficult to uniformly spray the anti-spray in the spray nozzle of the gas sprinkler. Corrosion coating 'at the same time does not block the sprinkler nozzle. Ο Therefore, in order to solve the problem of the life cycle limitation of the gas sprinkler caused by the coating in the plasma chamber components, A new type of gas shower head is proposed, which is made entirely of a solid yttrium 〇xide-Comprising substrate. Obviously, the gas is disclosed in Japanese Patent Application No. 20050056218. The sprinkler can overcome the problem of insufficient density of the coating itself, and also avoids the problem that the spout is blocked. However, the gas sprinkler cannot be effectively used because of its high resistivity. Used as a radio frequency path in the plasma reaction chamber. The reason is that the resistivity has a high impedance, which hinders the conduction of the RF signal or consumes the RF energy. For example, in a capacitively coupled plasma reaction chamber, the gas The sprinkler is usually used as the upper electrode and grounded. The substrate holder opposite the sprinkler is usually used as the lower electrode and connected to the RF source. If it is sprayed as a radio frequency path during plasma etching, The head has a high resistivity, and the result is obvious, the RF signal may not be turned on, or the RF energy s is consumed a lot, thereby greatly reducing the RF signal guide. s efficiency. SUMMARY OF THE INVENTION 201036086 The object of the present invention is to provide a reaction chamber component resistant to plasma rot, which overcomes the shortage of financial technology and solves the problem that the existing lining reaction chamber components hinder the conduction of radio frequency signals. Another object of the present invention is to provide a plasma reaction chamber that includes reactive chamber components that are resistant to electrical corrosion by radio frequency conduction. It is still another object of the present invention to provide a method of fabricating a reaction chamber component resistant to plasma corrosion to produce a reaction chamber component that facilitates the conduction of radio frequency signals. The present invention can be realized in the following manner: A reaction chamber component for plasma corrosion resistance of a plasma reaction chamber, which is exposed to money generated in the plasma reaction chamber, the reaction chamber component being oxygenated by her material and Made of a small amount of doping element and having a resistivity of less than 10 ohm-cm. The present invention also provides a method of fabricating a plasma resistant chamber component of a plasma reaction chamber, comprising: (1) subjecting an oxidized material and a small amount of a doping element to a hot resistion or sintering to form a resistivity of less than 10 An ohm-cm conductive substrate; (2) processing the conductive substrate' to form the reaction chamber component. The present invention further provides a plasma reaction chamber comprising a reaction chamber component, the plasma reaction chamber having a plasma generated therein during operation, the reaction chamber component having at least a surface exposed to the plasma, It is characterized in that the reaction is to. The electro-transformation of the P-piece is less than 1Q ohm_fresh, its composition is oxidized and less than the amount of 201036086, and the reaction chamber is in the (iv) reaction chamber. The present invention also provides a reaction chamber component for electro-chemical reaction chambers which is resistant to plasma decay, and which comprises at least a first-conducting electrically conductive substrate and a second electrically-conductive substrate A conductive material, the second conductive substrate having at least a surface exposed to the f-pin and made of a cerium oxide material having a rate of less than ^ ohm-cm and a small amount of doping elements.
Ο 【實施方式】 本發明提供-種用於電漿反應室之抗電賴钮之反應 至部件，該反應室部件不僅能抵抗反應室内部產生之電漿腐 餘’而且部件本身具有高的導電性能，_與财技術的抗 電漿腐ϋ之反應室部件不同，其可以翻作反應室的射頻通 道，從而將射頻信號導道至接地。所述反應室部件可以包括 各種反應室内部部件，包括但不限於：反應室之腔壁 (reactor chamber wall)、反應室内襯（reactor liner)、 氣體喷淋頭（gas showerhead)、氣體喷淋頭接地環 (grounding ring of gas showerhead)、晶片卡盤邊環(wafer chuck edge ring)、基片支座（substrate support)、電漿 限制環(plasma confinement ring)、聚焦環(focus ring)、 排氣環(baffle ring)等。 本發明反應室部件由氧化釔材料和少量摻雜元素經過 燒結或熱壓製成，製成後的反應室部件具有高的導電性能， 201036086 具有小於或等於10歐姆—釐米之電阻率。製成後的反應室部 件中’氧化纪材料之成份含量大於99%，摻雜元素成份含量 小於1%。該摻雜元素包括非金屬元素，例如為包括礙、矽、 氮兀素中的一種或幾種。優選地，該摻雜元素僅為碳。應當 說明的是，由於材料提純的技術的原因，目前半導體業界内 使用之氧化紀材料並不是百分之百的純度，其内會含有極微 量的金屬雜質。 由於本發明之反應室部件本身在製成後即具有高的導 電性能’因此，反應室部件即使具有很厚的厚度，比如，厚 又範圍T以為1毫米至2〇毫米，也能夠有效地提供射頻通 路’將射縣量通職反射部倾合給反齡其他部件或 接地目此’該反應室部件可以被廣泛運用於電裝反應室内 以提供射頻通路，同時能有效抵抗提供抗電漿腐蝕。 本發明反應室部件是通過下财法製成的。首先，按特 定成份含量比例提供氧化釔粉末和少量摻雜元素的粉末，並 將二者充分㈣地混合；再將混合好的氧偷的粉末和少量 摻雜元素的粉末經過熱壓或燒結形成具有電阻率小於1〇歐 姆麓米之導電基體；最後，域要加1跡所料電基體， 使之變成所需要之反魅部件。依所加卫成形的反應”件 不同’所述加工成形可以包括：鑽孔步驟、抛光步驟、枯接 步驟、岗溫退火步驟、清洗步驟等。 圖1是-種包含本發明抗電聚雜之反應室部件的電聚 201036086 反應至的實施方式之示意圖。如圖i所示，電漿反應室 包括-腔室110 ’ —頂部⑴，與頂部相對的底部11Z，形成 於頂部111和底部112之間的反應室腔壁113，以及形成於 腔壁上的反應室内襯130。所述腔室11〇包括一制程區116。 所述電衆反應室1GG還包括一位於所述頂部⑴的氣體喷淋 頭114。與氣體喷淋頭114相對並位於腔室底部112的地方 δ又置有基片支座115,用於支撐被處理的半導體工藝件丨口。 由前述可知，本發明之反應室部件可以用於電漿反應室 内多種部件。優選的—種實施方歧該反應室部件作為電衆 钮刻反應室巾喊时_ (在卫料，也作為上電極）。 圖2疋-種安裝於圖！所示的反應室中的氣體喷淋頭（上電 極）之示意圖。該氣體喷淋頭在電漿姓刻反應過程中，不僅 能抵抗電聚賴’而且作為上電極，其具有高的導電性能， 因而能提供良好的射頻通道。如圖2所示，所述氣體喷淋頭 114具有若干通孔，用於向反應室内噴射和輸入反應氣體。 所述通孔由前述已經製備成的導電基體經超聲波鑽孔形 成，其可以為如圖3a所示的直線性的孔徑均勻的通孔 1140 ,其也可以為如圖3b所示的非均勻孔徑的通孔 1140 t匕如’通孔114〇具有孔獲較大的上端部11伽 以及孔徑較小的下端部1·。應當理解，所述通孔1140、 1140也可以被製造成其他各種綱句孔徑形狀：例如上大 下小的錐形通孔，或者是上小下大的倒錐形通孔也可以是 201036086 上/下孔徑一樣而中間有一段較+孔徑的通孔，還可以是上下 孔徑-樣或不-樣的非直線性（_)的通孔等等。如圖1 所不’氣體喷淋頭114周圍還設置有一氣體噴淋頭接地環 U41 ’其用於對氣體喷淋頭114起細乍用或用於加大 喷淋頭橫向面積以改善電漿侧之均勻性。基片支座115包 括-支縣盤115卜以及設置於所述基盤上的—靜電卡= 1152。支撐基盤1151内設置有水冷通孔可以控制所述靜電 卡盤1152的溫度。靜電卡盤内有電極1153，其通過一 射頻匹配網路（未圖示）而連接到—射頻源⑽。靜電卡盤 1152外還設置有卡盤邊環1154。在本實施例中腔壁為導體， 例如銘金屬壁。氣體喷淋頭114是由熱壓之氧化紀材料和非 金屬掺雜元素製成之電阻率低於1〇歐姆_嫠米的導體，其中 所述非金屬摻雜元素可以是碳、氮、♦元素巾之—種或多 種’且其成份含量低於1%。由於所述氣體噴淋頭114為電阻 率低於10 釐米的導體，因此在本實施例中，氣體喷淋 頭114除了向反應腔體通人氣體外，還被用作為電極以及射 頻通道。作為-種優歡财式，賴驗之氧她材料和 非金屬摻雜元素製成之氣體喷淋頭之電阻率大約為1歐姆— 釐米。 在如圖1所邱實施例中，腔室頂部m與氣體嘴淋頭 114接地。但應當轉在本發明之某些其他實施方式中反應 室的腔壁113、氣體噴淋頭接地環1141均可接地，且氣體喷 9 201036086 L頁接地％ 1141、腔翻襯13Q、卡盤邊環1154均可為與 氣體噴淋頭-樣材料製成的導體。當欲使用電漿反應室⑽ 對晶片117上的材料進行_時，首先利用果（未圖示）將 腔室m抽成真空’之後將㈣117由簡在真空的傳輸室 (未圖示）中移入腔室n〇内，並且將其置於基片支座115 上’並可利用靜電吸附將晶片固定在基片支座115上。之後， 將由多種體積流率的氣·成的制程氣體通人反應室110 内’虽腔至110内的壓力達到一定的穩定程度後，開啟射頻 電源系統以供給伽氣舰量，而補賴116内形成電聚 。在這一過程中’其令基片支座115作為一陰極，而腔 室頂部111與氣體喷淋頭114共同作為陽極電極。實際上， 導電的氣體噴麻頭114在這裏被作用為提供射頻通路。如前 所述，正是由於本發明中的氣體喷淋頭114是由熱壓之氧化 紀材料和非金屬摻雜元素製成之電阻率低於10歐姆—董米的 導體，所以其不會阻礙射頻信號_通。另外，由於氧化紀 材料本身具有較強的抗電聚腐餘的性能，因此不難理解，本 發明之氣體魏頭還具有良好的抗腐錄能以及較長的使 用壽命。 同時也應當理解，在某些其他的實施方式中，當電漿反 應室的腔壁113、氣體噴淋頭接地環1141均接地，且氣體喷 淋頭接地環1141、腔體内襯130、卡盤邊環1154均為與氣 體喷淋頭一樣材料製成的導體時，基片支座115以及其導電 10 201036086 的卡盤邊環1154被共同作為一陰極，而腔室反應室的腔壁 U3 (包括設置在反應室的腔壁上的導電的腔體内襯13〇)、 腔室頂部111、氣體喷淋頭114、氣體喷淋頭接地環1141將 被共同作為陽極電極。此時，這些導電的氣體噴淋頭114、 氣體喷淋頭接地環1141、腔體内襯13〇、卡盤邊環1154都 被作為了射頻通路。基於同樣的道理，氣體喷淋頭114、氣 體嗔淋頭接地環1141、腔體内襯130、卡盤邊環1154將不 〇 會妨礙射頻信號的導通。 圖4所示為本發明之抗電漿腐蝕之反應室部件之製造方 法机程圖。如圖4所示，本發明之製造方法包括以下步驟·· (1) 將氧化釔材料和少量摻雜元素經過熱壓或燒結形成 具有電阻率小於10歐姆-釐米之導電基體，如步驟401所示； (2) 加工所述導電基體，製成所述反應室部件，如步驟 402所示。 © 在步驟401中，所述少量摻雜元素包括非金屬元素，其 〇減後、石夕凡素中之—種或多種。在熱壓或燒結的過程 中所述摻雜之非金屬元素將與所述之氧化紀材料相互作用， 並最終形成緻密的具有低電阻率（小於10歐姆-釐米）的導 電基體所述摻雜之非金屬摻雜成份含量占整個導電基 1%或小1%。 ,402中，依需要加工成形所述導電基體，使之變 成所需要之反應室部件。所述之電跃應室部件可以包括多 201036086 種，比如：氣體喷淋頭、氣體喷淋頭外環氣體喷淋頭接地環、 腔體内襯、卡盤邊環等各種部件。依所加工成形的反應室部 件不同，在所述步驟402中，加工成形可以包括：鑽孔步驟、 拋光步驟、粘接步驟、高溫退火步驟、清洗步驟等。舉例說 明’其中當所製造的述反應室部件為氣體喷淋頭時，還進— 步包括··超聲波鑽孔(ultrasonicdrilling)之步驟、鑽孔後 高溫退火以及酸洗之步驟。為了在氣體喷淋頭上形成氣體噴 射孔，用超聲波鑽孔技術形成孔的工藝避免了鑽小直徑孔和 鑽具有高深寬比（high aspect ratio)的孔的耗費時間問題。 所述酸洗具體可以指使用鹽酸、硫酸、硝酸等強酸或醋酸、 碳酸等弱酸來清洗由於鑽孔所產生的表面顆粒。 更進一步地，在不脫離本發明之發明構思和精神下，本 發明還k供了反應室部件之其他實施例變形。本發明進一步 知:供一種反應室部件，其並非由前述一片式的導電基體製 成而疋由多片式的導電基體製成。如圖5所示，反應室部 件251至少包括連接在一起的第一導電基體261及第二導電 基體262。所述第一導電基體261及第二導電基體262均具 有低之電阻率，即，具有高的導電性，從而可以在反應室内 提供賴通道。第二導電基體262具有至少一表面2621暴 露於電漿反應室的賴中。該第—導電基體261可以由各種 低電阻率的導體材料製成，如金雜製成，或由如前述由氧 化紀材料和少量摻雜元素經燒結或熱雜成’並具有低之電 12 201036086Ο [Embodiment] The present invention provides a reaction for the resistance of a plasma reaction chamber to a component, the reaction chamber component not only resists the plasma residue generated inside the reaction chamber, but also has a high electrical conductivity of the component itself. The performance, unlike the chemical-resistant plasma-resistant reactive chamber components, can be turned into the RF channel of the reaction chamber to conduct the RF signal to ground. The reaction chamber components can include various reaction chamber components including, but not limited to, a reaction chamber wall, a reactor liner, a gas showerhead, a gas showerhead Grounding ring of gas showerhead, wafer chuck edge ring, substrate support, plasma confinement ring, focus ring, exhaust Baffle ring, etc. The reaction chamber component of the present invention is formed by sintering or hot pressing of a cerium oxide material and a small amount of doping elements, and the resulting reaction chamber component has high electrical conductivity, and 201036086 has a resistivity of less than or equal to 10 ohm-cm. In the post-process chamber part, the composition of the oxidized material is greater than 99% and the doping element content is less than 1%. The doping element includes a non-metallic element, for example, including one or more of ancillary, anthracene, and aziridine. Preferably, the doping element is only carbon. It should be noted that due to the technology of material purification, the oxidized material used in the semiconductor industry is not 100% pure, and it contains very small amounts of metal impurities. Since the reaction chamber component of the present invention itself has high electrical conductivity after being produced, the reaction chamber component can be effectively provided even if it has a very thick thickness, for example, a thickness and a range T of 1 mm to 2 mm. The RF channel 'is immersed in the county's active reflective parts for other components of the anti-age or grounding. This reaction chamber component can be widely used in the electrical equipment reaction chamber to provide RF path, and is effective against providing plasma corrosion resistance. . The reaction chamber components of the present invention are made by the following method. First, a powder of cerium oxide powder and a small amount of doping element is supplied in a proportion of a specific component content, and the two are sufficiently mixed (four); and the powder of the mixed oxygen stealing powder and the powder of a small amount of doping element are formed by hot pressing or sintering. A conductive substrate having a resistivity of less than 1 ohm ohms; finally, the field is to be added with a trace of the electrical substrate to make it the desired anti-enchant component. The forming process may include: a drilling step, a polishing step, a dead step, a temper annealing step, a washing step, etc. according to the reaction of forming the shaped member. FIG. 1 is a type of the present invention. A schematic diagram of an embodiment of the reaction of the reaction chamber components to the electrical polymerization 201036086. As shown in Figure i, the plasma reaction chamber includes a chamber 110' - a top portion (1) and a bottom portion 11Z opposite the top portion formed at the top portion 111 and the bottom portion 112. There is a reaction chamber chamber wall 113, and a reaction chamber liner 130 formed on the chamber wall. The chamber 11A includes a process zone 116. The electricity chamber 1GG further includes a gas at the top (1). The shower head 114 is opposite to the gas shower head 114 and located at the bottom 112 of the chamber, and is further provided with a substrate holder 115 for supporting the processed semiconductor process member opening. As can be seen from the foregoing, the reaction of the present invention The chamber components can be used for various components in the plasma reaction chamber. The preferred embodiment of the reaction chamber is used as the electric button to inject the reaction chamber towel when y (in the bathroom, also as the upper electrode). Installed in the figure! A schematic diagram of a gas shower head (upper electrode) in the chamber. The gas shower head not only resists electricity but also acts as an upper electrode in the process of plasma surname reaction, and has high electrical conductivity. A good RF channel is provided. As shown in Fig. 2, the gas shower head 114 has a plurality of through holes for injecting and inputting a reaction gas into the reaction chamber. The through holes are ultrasonically drilled by the conductive substrate which has been prepared as described above. The hole is formed, which may be a linear through hole 1140 having a uniform aperture as shown in FIG. 3a, which may also be a through hole 1140 of a non-uniform aperture as shown in FIG. 3b. For example, the through hole 114 has a hole. The upper end portion 11 is larger and the lower end portion 1· having a smaller aperture. It should be understood that the through holes 1140, 1140 can also be fabricated into other various aperture shapes: for example, a tapered through hole that is large and small. Or the inverted conical through hole of the upper and lower sides may be the same as the upper/lower aperture of 201036086 and a through hole with a + aperture in the middle, or may be the upper and lower aperture-like or non-linear non-linear (_) Through hole, etc. as shown in Figure 1 A gas shower head grounding ring U41 ' is also disposed around the shower head 114 for use in finely controlling the gas shower head 114 or for increasing the lateral area of the shower head to improve the uniformity of the plasma side. The support 115 includes a branch disk 115 and an electrostatic card = 1152 disposed on the base plate. A water-cooling through hole is provided in the support base plate 1151 to control the temperature of the electrostatic chuck 1152. The electrostatic chuck has electrodes therein. 1153, which is connected to a radio frequency source (10) through a radio frequency matching network (not shown). A chuck side ring 1154 is further disposed outside the electrostatic chuck 1152. In this embodiment, the cavity wall is a conductor, such as a metal wall. The gas shower head 114 is a conductor made of a hot pressed oxidized material and a non-metallic doping element having a resistivity of less than 1 〇 ohm 嫠 ,, wherein the non-metal doping element may be carbon, nitrogen, ♦ Elemental or multiple types of elemental towels and their content is less than 1%. Since the gas shower head 114 is a conductor having a resistivity of less than 10 cm, in the present embodiment, the gas shower head 114 is used as an electrode and an RF channel in addition to a gas passing through the reaction chamber. As a kind of excellent wealth, the gas sprinkler made of her material and non-metallic doping elements has a resistivity of about 1 ohm-cm. In the embodiment of Figure 1, the chamber top m is coupled to the gas nozzle tip 114. However, in some other embodiments of the present invention, the chamber wall 113 of the reaction chamber and the gas sprinkler grounding ring 1141 may be grounded, and the gas jet 9 201036086 L page grounding % 1141, the cavity lining 13Q, the chuck side Ring 1154 can be a conductor made of a gas sprinkler-like material. When the material on the wafer 117 is to be subjected to _ using the plasma reaction chamber (10), the chamber m is first evacuated by a fruit (not shown), and then the (four) 117 is placed in a vacuum transfer chamber (not shown). It is moved into the chamber n〇 and placed on the substrate holder 115' and the wafer can be fixed to the substrate holder 115 by electrostatic adsorption. After that, the process gas from a plurality of volumetric flow rates is introduced into the reaction chamber 110. After the pressure in the chamber reaches a certain degree of stability, the RF power system is turned on to supply the gamma ship, and the compensation is 116. Electropolymerization is formed inside. In this process, it causes the substrate holder 115 to function as a cathode, and the chamber top 111 and the gas shower head 114 together function as an anode electrode. In effect, the electrically conductive gas lanceant 114 acts here to provide a radio frequency path. As described above, it is precisely because the gas shower head 114 of the present invention is made of a hot-pressed oxidized material and a non-metallic doping element having a resistivity of less than 10 ohm-dongm, so it does not Block RF signal_pass. In addition, since the oxidized material itself has strong resistance to electrical poly-resistance, it is not difficult to understand that the gas head of the present invention also has good anti-corrosion recording energy and long service life. At the same time, it should be understood that in some other embodiments, when the chamber wall 113 of the plasma reaction chamber and the gas sprinkler grounding ring 1141 are grounded, and the gas shower head grounding ring 1141, the cavity inner liner 130, the card When the disk edge ring 1154 is a conductor made of the same material as the gas shower head, the substrate holder 115 and the chuck side ring 1154 of its conductive 10 201036086 are collectively used as a cathode, and the chamber wall U3 of the chamber reaction chamber (including the electrically conductive cavity liner 13 disposed on the chamber wall of the reaction chamber), the chamber top 111, the gas shower head 114, and the gas shower head ground ring 1141 will be collectively used as the anode electrode. At this time, these conductive gas shower heads 114, gas shower head grounding ring 1141, cavity inner liner 13 〇, and chuck side ring 1154 are all used as radio frequency paths. For the same reason, the gas shower head 114, the gas sprinkler head grounding ring 1141, the cavity liner 130, and the chuck side ring 1154 will not interfere with the conduction of the RF signal. Fig. 4 is a flow chart showing the manufacturing process of the chamber chamber for plasma corrosion resistance of the present invention. As shown in FIG. 4, the manufacturing method of the present invention comprises the following steps: (1) hot-pressing or sintering a cerium oxide material and a small amount of doping elements to form a conductive substrate having a resistivity of less than 10 ohm-cm, as in step 401. (2) processing the conductive substrate to form the reaction chamber component, as shown in step 402. © In step 401, the small amount of doping elements includes non-metallic elements, one or more of which are reduced or smectic. The doped non-metallic element will interact with the oxidized material during the hot pressing or sintering process and eventually form a dense conductive matrix having a low resistivity (less than 10 ohm-cm). The non-metallic doping component content is 1% or less 1% of the entire conductive group. In 402, the conductive substrate is processed as needed to become a desired reaction chamber component. The electrical hopping chamber component may include more than one type of 201036086, such as: a gas shower head, a gas sprinkler outer ring gas sprinkler grounding ring, a cavity inner lining, a chuck side ring and the like. Depending on the shape of the process chamber to be formed, in the step 402, the forming may include a drilling step, a polishing step, a bonding step, a high temperature annealing step, a cleaning step, and the like. For example, when the reaction chamber component manufactured is a gas shower head, the steps further include the steps of ultrasonic drilling, high temperature annealing after drilling, and pickling. In order to form a gas injection hole in a gas showerhead, the process of forming a hole by ultrasonic drilling techniques avoids the time consuming problem of drilling a small diameter hole and drilling a hole having a high aspect ratio. The pickling may specifically mean the use of a strong acid such as hydrochloric acid, sulfuric acid, nitric acid or a weak acid such as acetic acid or carbonic acid to wash surface particles generated by drilling. Further, the present invention provides variations to other embodiments of the reaction chamber components without departing from the inventive concept and spirit of the invention. It is further known in the art to provide a reaction chamber component that is not formed from the one-piece conductive substrate and is formed from a multi-piece conductive substrate. As shown in Fig. 5, the reaction chamber member 251 includes at least a first conductive substrate 261 and a second conductive substrate 262 which are connected together. The first conductive substrate 261 and the second conductive substrate 262 each have a low electrical resistivity, i.e., have high electrical conductivity, so that a channel can be provided in the reaction chamber. The second conductive substrate 262 has at least one surface 2621 exposed to the plasma reaction chamber. The first conductive substrate 261 may be made of various low-resistivity conductor materials, such as gold, or sintered or thermally mixed with an oxidized material and a small amount of doping elements as described above and has low power. 201036086
羊道或由燒結的或熱壓的碳化錢魏人的石墨製成。兮 =-導電基細㈣職她_鳩瘦 燒結或熱壓製成，並具有低於10歐姆—着米之電阻率。作為 一種實施方式，該第-導電基體261及第二導電基體脱均 由如前述由·崎料和少量摻雜元素分舰燒結或熱壓 製成’並具有低於10 __鮮之電_。絲造過程中， 該第-導電基體261及第二導電基體262被分別製造成形， 再通過熱壓的方式使二者連接在—起，或者在二者之間提供 一種粘合材料（未圖示）使二者粘合在一起。 所述粘合材料可以是各種適用之粘合材料，例如，一種 可以形成彈性連接(elast〇meric j0int)的枯合材料，例如， 聚合物材料(polymer material)。舉例說來，可以選用的粘 合材料有：聚醯亞胺(polyimide)、聚酮(p〇iyket〇ne)、聚 醚(polyetherketone)、聚醚颯(p〇lyether suif0ne)、聚對 苯二甲酸乙二醇酯（polyethylene terephthalate)、聚四氟 乙烯丙烯共聚物(fluoroethylene propylene copolymers)、 纖維素(cellulose)、三醋酸酯（triacetates)、石夕（silicone) 以及橡膠製品(rubber)。合適使用的高純度彈性材料(high purity elastomeric materials)包括：通用電氣公司 (General Electric)供應的單成分室溫固化粘合材料 (one-component room temperature curing adhesives ) » 如RTV133和RTV167，通用電氣公司供應的單成分可流動的 13 201036086 加熱固化（例如超過10 0 °C )的枯合材料(one-component flowable heat-curable (e,g. over 1000C) adhesive)， 如TSE 3221，以及道康寧公司（Dow Coining)提供的雙混合固 化彈性材料（two-part addition cure elastomer )，如 “SILASTIC”。一種特別適用之彈性材料是含有硬化催化劑 (如硬化鉑）的彈性材料（polydimethylsiloxane containing elastomer) ’該彈性材料可由Rhodia公司提 供’型號V217，且其在250°C或更高溫度下保持穩定。該彈 性材料也可選擇地包括導電填料和/或導熱粒子，或其他成 型的填料，如金屬網、編織的或非編織的傳導物等。 又基於與前一實施例相同的道理，因為本實施例中之反 應至部件251的第一導電基體261與第二導電基體262均具 有低之電阻率，因此有利於射頻信號的導通。此外，所述之 第-導電基體262即使做得比較厚，也不辟射頻導通性 用b ’可以至少為3毫米。最佳地，在本實施例中其厚度範圍 為1毫米至20毫米。本發明反應室部件251克服了傳統塗 層的厚度與密度驗制，同時具有良好的抗顧性能。 在電滎反應過程中，通常在使騎種包含第一導電基體 261及第一導電基體262的反應室部件時，第二導電基體脱 在’'士過-特疋長的卫作時會被電漿完全腐贿或腐钱 掉其中的—部分。此時，設備使用者的工作人員可以將該使 i的反應至精拆下，將反應室部件上纖的第二導電基 14 201036086 體262去除’只剩下使用過的第一導電基體261。由於該第 一導電基體261在電漿反應過程中並沒有接觸電漿，因而不 會被電漿腐蝕，可以被循環再利用。然後，提供一新的第二 導電基體262使之與使用過的第一導電基體261連接在一起 而成為一新的反應室部件，從而可以循環再利用第一導電基 體261，由此可以降低設備使用者的使用成本。類似地，戶斤 述連接方式包括：通過熱壓的方式使該第一導電基體261及 〇 第二導電基體262連接在一起，或者在二者之間提供一種粘 合材料使二者粘合在一起。 本發明是參照具體實例描述的，但其所有方面都應為示 意性而非限定性的。技術人員可以發現很多硬體、軟體和固 件之不同組合均可適用於應用本發明。此外，對於一般技術 人員而言’在瞭解了本發明所公開的特徵和實施方式後，本 發明之其他應用方式也可以較為明顯地被想到。本發明所述 ❹ 實施方式的各種構思和/或元件可以在電漿反應室技術中被 單獨地或被組合地使用。本說明書中所述之特徵和實施方式 應當僅理解為示例性的說明，本發明之權利範圍由下列權利 要求所限定。 【圖式簡單說明】 圖1是一種包含本發明抗電漿腐蝕之反應室部件的電聚 反應至的實施方式之示意圖。 圖2是一種安裝於圖1所示的反應室中的氣體噴淋頭（上 電極）之示意圖。 15 201036086 圖3a和3b是根據本圖2中所示氣體喷淋頭沿剖面線A_A 剖開的部分截面圖之兩種實施方式。 圖4是本發明之抗電漿腐蝕之反應室部件之製造方法 流程圖。 °The sheep's road is made of sintered or hot pressed carbonized money Weiren's graphite.兮 =- Conductive base fine (four) job her _ 鸠 thin Sintered or hot pressed, and has a resistivity of less than 10 ohms - meters. As an embodiment, the first conductive substrate 261 and the second conductive substrate are de-alloyed by the sintering and hot pressing of the first and second doping elements, and have a power of less than 10 __ . During the wire making process, the first conductive substrate 261 and the second conductive substrate 262 are separately formed and then joined together by hot pressing, or a bonding material is provided between the two (not shown). Show) bonding the two together. The bonding material may be any suitable bonding material, for example, a dead material which can form an elastic joint, for example, a polymer material. For example, the available bonding materials are: polyimide, polyketone, polyetherketone, polyether ketone, poly(p-lyether suif0ne), poly-p-phenylene Polyethylene terephthalate, fluoroethylene propylene copolymers, cellulose, triacetates, silicone, and rubber. Suitable high-purity elastomeric materials include: one-component room temperature curing adhesives supplied by General Electric, such as RTV133 and RTV167, General Electric Company One-component flowable heat-curable (e, g. over 1000C) adhesive, such as TSE 3221, and Dow Corning (single-component flowable heat-curable (eg, over 10C) adhesive) Dow Coining) provides a two-part addition cure elastomer such as "SILASTIC". A particularly suitable elastomeric material is a polydimethylsiloxane containing elastomer which is provided by Rhodia Corporation and which is stable at 250 ° C or higher. The elastomeric material may also optionally include electrically conductive fillers and/or thermally conductive particles, or other shaped fillers such as metal mesh, woven or non-woven conductors, and the like. Further, it is based on the same principle as the previous embodiment, since the first conductive substrate 261 and the second conductive substrate 262 which are reacted to the member 251 in this embodiment each have a low resistivity, thereby facilitating the conduction of the radio frequency signal. Further, even if the first conductive substrate 262 is made thicker, it does not have radio frequency conductivity. b ' can be at least 3 mm. Most preferably, in the present embodiment, the thickness ranges from 1 mm to 20 mm. The reaction chamber component 251 of the present invention overcomes the thickness and density of conventional coatings while providing good resistance to performance. During the electro-hydraulic reaction, usually when the seeding unit includes the first conductive substrate 261 and the reaction chamber component of the first conductive substrate 262, the second conductive substrate is removed from the ''s--------------- The plasma completely rots or rots the part of it. At this point, the equipment user's staff can remove the reaction from i to the fine removal of the second conductive substrate 262 on the reaction chamber component and leave only the used first conductive substrate 261. Since the first conductive substrate 261 does not contact the plasma during the plasma reaction, it is not corroded by the plasma and can be recycled. Then, a new second conductive substrate 262 is provided to be connected with the used first conductive substrate 261 to form a new reaction chamber component, so that the first conductive substrate 261 can be recycled and reused, thereby reducing the device. User's cost of use. Similarly, the connection method includes: connecting the first conductive substrate 261 and the second conductive substrate 262 together by hot pressing, or providing a bonding material between the two to bond the two together. together. The present invention has been described with reference to the specific embodiments, but all aspects thereof are intended to be illustrative and not restrictive. The skilled artisan will recognize that many different combinations of hardware, software and fasteners are suitable for use in the practice of the present invention. In addition, other modes of applicability of the present invention will be apparent to those of ordinary skill in the art. The various concepts and/or elements of the ❹ embodiment of the present invention may be used singly or in combination in plasma reactor technology. The features and embodiments described in the specification are to be understood as illustrative only, and the scope of the invention is defined by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an embodiment of electropolymerization comprising a reaction chamber component resistant to plasma corrosion of the present invention. Figure 2 is a schematic view of a gas shower head (upper electrode) mounted in the reaction chamber shown in Figure 1. 15 201036086 Figures 3a and 3b are two embodiments of a partial cross-sectional view taken along section line A_A in accordance with the gas showerhead shown in Figure 2. Fig. 4 is a flow chart showing a method of manufacturing a chamber chamber resistant to plasma corrosion according to the present invention. °
圖5是本發明反應室部件之另一種實施方式。 【主要元件符號說明】 100 電漿反應室 110 腔室 111 頂部 112 底部 113 腔壁 114 氣體噴淋頭 1140 通孔 1140’ 通孔 1140a 上端部 1140b 下端部 1141 氣體噴淋頭接地 115 基片支座 1151 支撐基盤 1152 靜電卡盤 1153 電極 1154 卡盤邊環 116 制程區 117 半導體工藝件（晶片） 120 射頻源 130 内襯 251 反應室部件 261 第一導電基體 262 第二導電基體 2621 表面 16Figure 5 is another embodiment of the reaction chamber components of the present invention. [Main component symbol description] 100 plasma reaction chamber 110 chamber 111 top 112 bottom 113 chamber wall 114 gas shower head 1140 through hole 1140' through hole 1140a upper end portion 1140b lower end portion 1141 gas sprinkler ground 115 substrate support 1151 Supporting Base 1152 Electrostatic Chuck 1153 Electrode 1154 Chuck Side Ring 116 Process Area 117 Semiconductor Process Piece (Wafer) 120 RF Source 130 Lining 251 Reaction Chamber Component 261 First Conductive Substrate 262 Second Conductive Substrate 2621 Surface 16