TW200944618A - Member coated with aluminum nitride by thermal spraying and process for producing the same - Google Patents

Member coated with aluminum nitride by thermal spraying and process for producing the same Download PDF

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Publication number
TW200944618A
TW200944618A TW97146888A TW97146888A TW200944618A TW 200944618 A TW200944618 A TW 200944618A TW 97146888 A TW97146888 A TW 97146888A TW 97146888 A TW97146888 A TW 97146888A TW 200944618 A TW200944618 A TW 200944618A
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Taiwan
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aluminum nitride
spray
film
powder
nitriding
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TW97146888A
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Chinese (zh)
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Masanori Abe
Koyata Takahashi
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Tosoh Corp
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Publication of TW200944618A publication Critical patent/TW200944618A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Laminated Bodies (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A thermal-spraying deposit of aluminum nitride excellent in thermal conductivity and insulating properties is desired to be formed on members for electrostatic chucks, heaters, and plasma-processing chambers for use in the production of semiconductors, etc. or on members for use in radiating insulating substrates for power devices. A thermal-spraying deposit having a low porosity and a high aluminum nitride content is hence provided. A member coated with aluminum nitride by thermal spraying is also provided which comprises a base and, formed on at least part thereof, a thermal-spraying deposit constituted of fine aluminum nitride particles. This member is characterized in that the thermal-spraying deposit is constituted of fine aluminum nitride particles which are nearly spherical and have a diameter of 1-10 μm on the average. The member may be characterized in that interstices among the aluminum nitride particles are filled with a Group IIIA and/or Group IIA element compound, and that the deposit has a porosity of 15% or lower. This member can be produced by conducting thermal spraying with an aluminum nitride powder having an average particle diameter of 1-10 μm or with a powder mixture obtained by incorporating a Group IIIA and/or Group IIA element compound into the same aluminum nitride powder.

Description

200944618 九、發明說明: 【發明所屬之技術領域】 熱器 板, 表面 本發明是有關於-料導料製造的靜電轉頭、加 、電默處理反應室等的構件或功率元件的放教絕緣基 特別是為了將具有“㈣㈣為料料予至射 ’而賦予氮化物含量高、堅固且緻密的熔射膜。 9 ❹ 【先前技術】 氣化料㈣導高的騎材料,而且對氟Μ具有優 (:&。因此在半導體的製造工程的化學氣相沈積200944618 IX. Description of the invention: [Technical field of invention] Heater plate, surface The present invention relates to a component of an electrostatic head, an additive, a silently processed reaction chamber, or a power component. In particular, in order to impart a high-strength, strong and dense melt film with "(4)(4) as a material to the shot." 9 ❹ [Prior Art] Gasification material (4) High-profile riding material, and fluoroquinone Excellent (: &. therefore chemical vapor deposition in semiconductor manufacturing engineering

Vapc^epQsHiGn’⑽等的成膜裝置或電裝 …t,而要求此種特性的零件,例如是使用在:在 内圓基板的靜電固持頭中,為7使晶圓基板在面 内均勾的保持特定的溫度而與晶圓基板接觸的部份,在曰 圓基板加熱用加熱器中,與 曰曰 柃鱼屬電極一體成形的絕緣部 伤’或疋電漿姓刻請工程的電 護用構件等。 τ们夂應至的保 可以例如是熔射法、燒結 使對複雜的零件也能夠形 是使用熔射法。 形成氮化鋁部份的形成方法 法等,但是由不需要成形等、即 成氮化鋁部份的觀點來看,較佳 早純的使用熔射法形成氮化鋁部份的話 疋 ^ /<r L 从机⑴站部份的話,佑校 :條件進行溶射時,在溶解前會氧化、分解,而氮化銘: 形成變传不容易。因此,關於氮、 種種的檢討。 ,町万法進仃了Vapc^epQsHiGn' (10) film forming device or electric device...t, and parts requiring such characteristics are used, for example, in an electrostatic holding head of an inner circular substrate, so that the wafer substrate is hooked in the plane. The part that is in contact with the wafer substrate while maintaining a specific temperature, in the heating of the dome-shaped substrate heater, the insulation part integrally formed with the squid electrode is damaged or the electrical code of the 姓 疋 姓Use components and so on. τ 夂 的 的 的 保 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 熔 。 。 A method of forming an aluminum nitride portion, etc., but from the viewpoint of not forming, etc., that is, forming an aluminum nitride portion, it is preferable to form an aluminum nitride portion by a spray method in an early pure manner. <r L From the machine (1) station part, Youyou: When the conditions are sprayed, it will oxidize and decompose before dissolution, and nitriding: It is not easy to form a change. Therefore, a review of nitrogen and various species. , the town of Wanfa entered

7I05-10I88-PF 200944618 例如是,報告有將氧化鋁 得的熔射膜錢中教處理μ》 進讀射,並將所 t中熱處理的方法(例如是請參照專利文獻 疋需要18G(rc程度的高溫,不適用於金屬基材。 其次,報告有使用氮化链與氧化銘混合造粒所得的粉 末以進行熔射的方法(例如是請參照料利讀卜但是, 此報口中Α1Ν的存在量為47%的程度,在熔射臈中的氣孔7I05-10I88-PF 200944618 For example, it is reported that there is a method of heat-treating the molten film obtained by alumina, and the method of heat treatment in t (for example, please refer to the patent document 疋 18G (rc degree) The high temperature does not apply to metal substrates. Secondly, there is a method of spraying powder obtained by mixing nitriding chains with oxidized smelting powders (for example, please refer to the material reading, but the presence of Α1Ν in this mouthpiece) The amount of stomata in the spray raft is 47%

多’所報告的熱傳導率比氧化鋁陶瓷的燒結體低,而希望 能夠進一步提高熱傳導率。 而且,報告有將金屬與其金屬的氮化物與氧化物混合 的陶金粉末’具體而言是將金屬#、氮化梦以及氧化梦的 混合粉末進行熔射,以作為矽系陶金的底塗佈層,再於其 上形成含錯的陶瓷熔射膜的技術(例如是請參照專利文獻 2)。但是,具有因氮化物與金屬的混合而使得絕緣性降低 的疑慮》 而且,亦報告有將金屬鋁粉末或是金屬鋁粉末與氮化 ❿鋁於真空中以含氮氣的電漿進行熔射藉此進行反應性熔射 以堆積氮化鋁(例如是請參照專利文獻3、4),但是由於是 真空製程因此不容易對大尺寸的構件進行熔射,而且,具 有因金屬銘的殘留而導致絕緣性降低的疑慮。 【專利文獻1】特開平5-051285號公報 【專利文獻2】特開2003-313077號公報 【專利文獻3】特開2004-083929號公報 .【專利文獻4】特開2006-307298號公報 【非專利文獻1】H. Yang, I Luan, S-T. TuThe thermal conductivity reported by the multiple is lower than that of the sintered body of the alumina ceramic, and it is desirable to further increase the thermal conductivity. Moreover, it is reported that a ceramic powder in which a metal and a metal nitride and an oxide are mixed, specifically, a mixed powder of a metal #, a nitride dream, and an oxidized dream is sprayed as a primer for a lanthanide pottery gold. A technique in which a cloth layer is formed thereon and a wrong ceramic spray film is formed thereon (for example, refer to Patent Document 2). However, there is a concern that the insulation is lowered due to the mixing of the nitride and the metal. Moreover, it is also reported that the metal aluminum powder or the metal aluminum powder and the aluminum lanthanum nitride are melted in a vacuum with a plasma containing nitrogen. This is carried out by reactive spraying to deposit aluminum nitride (for example, refer to Patent Documents 3 and 4), but since it is a vacuum process, it is not easy to spray a large-sized member, and it is caused by the residue of the metal. Disadvantages of reduced insulation. [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. Hei. No. Hei. No. Hei. Non-Patent Document 1] H. Yang, I Luan, ST. Tu

7105-10188-PF 6 200944618 “A1N/A1203 Composite Coating Deposited by Plasma Spray” Proceedings of the 1st Asian Thermal Spray Conference, 41 (2005) .【發明内容】 [發明所要解決的課題]7105-10188-PF 6 200944618 "A1N/A1203 Composite Coating Deposited by Plasma Spray" Proceedings of the 1st Asian Thermal Spray Conference, 41 (2005). [Summary of the Invention] [Problems to be Solved by the Invention]

根據以上說明’藉由在半導體元件等的製造工程的Gyp 等的成膜裝置或電漿蝕刻裝置的靜電固持頭、加熱器、反 應室等的構件上熔射氮化鋁,可期待省去燒結法所需的高 溫處理工程、並賦予金屬基材直接電漿耐性,但是不易高 生產性的溶射成膜.以形成氮化鋁的敏密熔射膜。 本發明的S的為提供一種熔射構件,適於上述用途、 形成有敏密且對基材的密㈣良好的氮化銘溶射膜,並提 供此熔射構件的製造方法。 L用以解決課題的手段] 本發明者們鐵於上述現狀,進行銳意檢討的結果發 現將特定尺相氮化㈣末料料原料進行常壓電裝溶 射,使即將到達基材前的氮化銘粉末以僅止於表層氧化的 二 衝突’藉此能夠提供形成有氮化物的比 革间對基材的密接性良好的氮化㈣射膜的構件,而且 除了氮化轉末之外,藉由使用將氮化㈣末與而且’ /或古ΠΑ族化合物粉末混合、分散的混合粉末,能夠提^ 有的氮化㈣射膜的構件,從而完成了本發用。 ’、P疋,本發明關於-種氮化鋁熔射構件,在基材上According to the above description, it is expected that sintering is performed by spraying aluminum nitride on a member such as a film forming apparatus of Gyp or the like for manufacturing a semiconductor element or a static holding head of a plasma etching apparatus, a heater, a reaction chamber, or the like. The high-temperature treatment process required by the method, and imparts direct plasma resistance to the metal substrate, but is not easy to produce a high-productivity spray film to form a dense aluminum nitride film. The S of the present invention provides a spray member which is suitable for the above-mentioned use, forms a dense nitride film which is dense and dense to the substrate, and provides a method for producing the spray member. L. Means for Solving the Problem] As a result of intensive review of the above-mentioned status quo, the inventors of the present invention found that the material of the nitriding (four) material at the end of the specific phase is subjected to normal piezoelectric charging, and the nitriding immediately before reaching the substrate. The powder has a two-collision of only the oxidation of the surface layer, thereby providing a member of the nitriding film which has a good adhesion between the nitride and the substrate, and in addition to the nitriding terminal, The present invention can be completed by using a mixed powder in which the nitriding (tetra) powder and the '/or ancient steroid powder are mixed and dispersed, and the nitrided (four) film can be provided. ', P疋, the invention relates to an aluminum nitride spray member on a substrate

7105-10188-PF 200944618 形成有炫射膜,其中前述溶射臈由平均直徑為玉^以上 10 /zm以下的略球狀的氮化鋁粒子所構成。 【實施方式】 以下詳細說明本發明的構件。 參 將本發明的氮化銘構件模式的進行表示的話,如圖1 或圖2所示在基材u,21上堆積溶射膜12,22,其中溶 膜12, 22是由平均直徑為! ”以上1Q "以下的洛球狀 的氮化銘粒子13,23所構成的。此氮化銘粒子的堆積機 制,被認為是藉由熔射而使氮化紹粒子的表面―部份氧化 而產生粒子彼此之間的附著,並堆積熔射臈。 、基材上的氮化鋁粒子的平均直徑為j "以上几心 以下’較佳為2 ”以上8 以下。氮化紹粒子的平均 直徑越大的話’因溶射過程產生的粒子表面的氧化層所導 致熱傳導率降低會減少,但是氮化銘粒子的平均直徑過大 中心部的未氧化的氣化銘變多,在溶射時不附著於 土板上而回彈,因雨不易形成熔射膜。 而且’於本發明中,平均直徑係指構成炼射膜的個別 的平均值,係㈣膜斷㈣sw掃描式電子顯 二所得的個別粒子的直徑的計測,亦或是觀察 猶A(電子線探針微分析儀)、(能量分散型分光器)等所 :H、㈣組成像’計測其個別粒子的直徑等的方 法所測定的值。 而且’氮化銘粒子在溶射的過程表面會若干氧化、溶7105-10188-PF 200944618 A lenticular film is formed in which the sputum sputum is composed of slightly spherical aluminum nitride particles having an average diameter of not more than 10 /zm. [Embodiment] The members of the present invention will be described in detail below. Referring to the nitriding member mode of the present invention, as shown in Fig. 1 or Fig. 2, the solvent films 12, 22 are deposited on the substrate u, 21, wherein the films 12, 22 are made of an average diameter! "The above 1Q " the following spheroidal nitride-like particles 13,23. The deposition mechanism of this nitrided particle is considered to be the surface-partial oxidation of the nitrided particles by spraying. The particles are adhered to each other and the molten ruthenium is deposited. The average diameter of the aluminum nitride particles on the substrate is j " the above several centimeters are preferably 2 or more and 8 or less. If the average diameter of the nitriding particles is larger, the decrease in thermal conductivity due to the oxide layer on the surface of the particles due to the spraying process is reduced, but the average diameter of the nitriding particles is too large, and the unoxidized gasification at the center portion is large. When it is sprayed, it does not adhere to the soil plate and rebounds, and it is difficult to form a spray film due to rain. Further, in the present invention, the average diameter refers to the individual average value constituting the refining film, and the measurement of the diameter of the individual particles obtained by the (four) film breaking (four) sw scanning electron diopter, or the observation of the yoke A (electronic line exploration) A needle microanalyzer, an energy dispersive spectroscope, or the like: H, (4) A value measured by a method of measuring the diameter of individual particles or the like. Moreover, the surface of the nitriding particles will oxidize and dissolve on the surface of the spray process.

7105-10188-PF 200944618 融而帶圓形。因此,本發明所述的略球狀具體而言意味著 帶有球狀或是橢圓狀的圓形。氮化鋁粒子的形狀可藉由研 磨熔射膜的斯面並以SEM觀察或是觀察ΕΡΜΑ、EDS等所得 的氮、氧、鋁的組成像而判別。 氮化銘熔射膜的厚度較佳為5 "η以上5〇〇以下。 未滿5 "m的話有時會有缺乏絕緣性的情形,比5〇〇 厚的話有時會有熔射膜容易由基材剝離的情形。 _ 構成氮化鋁熔射膜的氮化鋁粒子,在溶射時由於僅有 表面破損因而於粒子間形成間隙。在熔射膜中產生間隙的 話,會產生因熔射膜的孔隙率增加而導致的熱傳導率降 低絕緣降低的疑慮。此處如圖2所示在氮化銘粒子μ 的間隙填入IIIA族及/或IIA族化合物24以降低氣孔。此 為本發明者考慮到IIIA族及/或UA族化合物藉由熔射而 熔融因而作為小粒子(sprat)而堆積於氮化鋁粒子所形成 的間隙中。為了得到氮化!g的良好物性(熱傳導率、絕緣耐 ® 堡等),孔隙率較佳為I5%以下。 本發明的孔隙率的測定方法可由以下方法測定。將熔 膜由基材剝離並藉由阿基米德法測定體(hik)密度,並 由與真密度的比率計算而得的方法,由以㈣等觀察溶射 膜所得的影像追蹤氣孔邱、 轧孔邓伤,並利用影像處理軟體計測氣 Μ心積’將此面積除以氣孔部份與溶射膜的面積。 的蓋 _化合物較佳為&、[[3^等的希土類金屬 化人I物氣化物、碟酸鹽等為·絕緣性的化合物,ΙΙΑ族 較佳為Mg、Ca、Sr、Ba等的驗土類金屬的氧化物、 7105-1 〇]83_pp 200944618 。'溶射膜中的前述ΙΠΑ 1 wt%以上30 wt%以 氟化物、構酸鹽等為絕緣性的化合物 族及/或IIA族化合物的含量較佳為 下。未滿1 wt%的話有時會有氣孔降低效果減少的情形, 比30 wt%多的話有時會有熱傳導率降低的疑慮。㈣膜中 的前述mA族及/或IIA族化合物的含量更佳為1 w彻 上25 wt%以下 例如是可為熱傳導 或鋼··鉬、鋁-矽等7105-10188-PF 200944618 Melted with a round shape. Therefore, the slightly spherical shape described in the present invention means a circle having a spherical shape or an elliptical shape. The shape of the aluminum nitride particles can be determined by grinding the surface of the molten film and observing or observing the composition images of nitrogen, oxygen, and aluminum obtained by ruthenium, EDS, or the like. The thickness of the nitriding film is preferably 5 "η or more and 5 Å or less. If it is less than 5 "m, there may be cases where insulation is lacking. If it is thicker than 5 有时, the melted film may be easily peeled off from the substrate. _ The aluminum nitride particles constituting the aluminum nitride spray film form a gap between the particles due to the surface damage only during the dissolution. When a gap is formed in the melted film, there is a concern that the thermal conductivity of the melted film is increased and the insulation is lowered. Here, as shown in FIG. 2, a group IIIA and/or IIA compound 24 is filled in the gap of the nitrided particles μ to reduce pores. Thus, the inventors have considered that the Group IIIA and/or UA compound is melted by spraying and thus deposited as small particles in the gap formed by the aluminum nitride particles. To get nitriding! The good physical properties of g (thermal conductivity, insulation resistance, etc.), and the porosity is preferably 15% or less. The method for measuring the porosity of the present invention can be measured by the following method. The film is peeled off from the substrate, and the density of the body is measured by the Archimedes method, and the ratio of the true density is calculated. The image obtained by observing the spray film by (4) or the like traces the pores and rolls. Kong Deng hurts, and uses the image processing software to measure the gas volume of the heart's division by dividing the area by the area of the pores and the area of the spray film. The cover-compound is preferably a compound of [Methane, Ca, Sr, Ba, etc., which is an insulating compound such as a rare earth metallized human I vapor or a disc acid salt. Soil-spectrum metal oxides, 7105-1 〇] 83_pp 200944618. The content of the above-mentioned ΙΠΑ 1 wt% or more and 30 wt% in the spray film, which is an insulating compound such as a fluoride or a structuring acid group, and/or a IIA compound is preferably as follows. When the amount is less than 1% by weight, the effect of reducing the porosity may be reduced. If the amount is more than 30% by weight, the thermal conductivity may be lowered. (4) The content of the aforementioned mA group and/or IIA compound in the film is more preferably 1 w and more than 25 wt%, for example, it may be heat conduction or steel··molybdenum, aluminum-bismuth, etc.

而且,本發明的熔射構件的基材 率100W/mK以上的銘、銷、銅等金屬 的複合金屬或合金,鋁-碳化矽、矽_碳化矽等的金屬陶变 複合材料。此些的表面亦可藉由切等或是氟酸等進行粗 經化, 。基材表面的表面粗糙度較 以使熔射膜容易附著 佳為0.1 /zm〜15 #m。此處表面粗糙度以是指JIS別 2001所記載的算數平均粗糙度Ra。另一方面,氮化鋁熔射 膜的熱傳導率較佳為1〇 ff/mK以上。 如上所述,氮化鋁粒子個別的表面在熔射過程會若干 氧化、熔融而與鄰接的粒子結合。圖3所示為本發明的所 使用的氮化鋁熔射膜的x線繞射圖的一實例。六方晶的氮 化鋁的(100)面(2 Θ ·· 33. 256。)可見於主峰31,其他相的 7氧化鋁的(400)面(20 ·· 45.789。)可見於峰32。而且, 電漿的輸出尚的話有可能產生α氧化鋁(1〇4)面(20 : 35· 103°)的峰。在粒子彼此之間堅固的結合、確保某程度 的熱傳導性的熔射膜的X線繞射峰強度中,較佳7氧化銘 (400)面與氧化鋁(1〇 4)面的峰強度的和對氮化鋁(ι〇〇) 面的峰強度的比為〇. 05以上〇· 2以下。此處此比未滿〇. 〇5Further, the material of the present invention has a base material ratio of 100 W/mK or more, a composite metal or alloy of a metal such as a pin, a pin, or a copper, and a metal-ceramic composite material such as aluminum-carbonized niobium or tantalum-niobium carbide. Such surfaces may also be roughened by dicing or hydrofluoric acid or the like. The surface roughness of the surface of the substrate is preferably such that the spray film is easily attached to 0.1 / zm to 15 #m. Here, the surface roughness means the arithmetic mean roughness Ra described in JIS 2001. On the other hand, the aluminum nitride sprayed film preferably has a thermal conductivity of 1 〇 ff/mK or more. As described above, the individual surfaces of the aluminum nitride particles are oxidized and melted to be bonded to the adjacent particles during the spraying process. Fig. 3 shows an example of an x-ray diffraction pattern of the aluminum nitride spray film used in the present invention. The (100) plane of the hexagonal aluminum nitride (2 Θ ·· 33. 256.) can be found in the main peak 31, and the (400) plane of the other phase of alumina 7 (20 ··· 45.789.) can be seen at the peak 32. Moreover, the output of the plasma may have a peak of α-alumina (1〇4) surface (20: 35·103°). In the X-ray diffraction peak intensity of the molten film which is strongly bonded to each other and ensures a certain degree of thermal conductivity, it is preferable to have a peak intensity of the (400) plane and the alumina (1〇4) plane. The ratio of the peak intensity to the aluminum nitride (ι〇〇) surface is 〇. 05 or more 〇·2 or less. Here is less than 〇. 〇5

7105-10188-PF 10 200944618 時,氮化銘彼此間的結合弱,有時會有需藉由加入⑴A族 及/或IIA族化合物以強化粒子彼此間的結合為較佳的情 況,此比超過〇.2的話有時會有犧牲熱傳導性的情況。 本發明的氮化鋁熔射構件,可用於在半導體的製造工 程的CVD等的成膜裝置或電漿蝕刻裝置中,用於支撐晶圓 f板的靜電固持頭或用於加熱晶圓基板的加熱器。具體而 言如圖4’在銘合金、不錢鋼等金$,或銘一碳化石夕、石夕一 ❹ 碳切等的金屬陶究複合材料所構成的基# 41上至少形 成第1熔射膜42、金屬電極層或加熱層43、第2熔射膜 44,第1·熔射膜及/或第2錢膜為如上所述的氮化銘溶射 膜,或是氮化銘粒子與叩族及/或IIA族化合物所構成 的熔射膜。 本發明的氮化銘熔射構件,而且可以在作為半導體的 製造工程的CVD等的成膜裝置、電漿蝕刻裝置、電漿清潔 裝置、灰化裝置等裝置内部構件的暴露於電聚的部份上, ❹ 進一步形成前述氮化鋁熔射膜。 上述暴露於電漿部份所使用的形成有前述氣化銘的構 件料當例,可舉出圓蓋(鐘罩’ belljar)、圓柱(cyHnder) 或裱’該氮化鋁熔射膜的表面粗糙度Ra較佳為“瓜以上 15㈣以下。此些零件不僅在構件表面會被電裝腐姓,並 會因钱刻、清潔、灰化晶圓而在構件表面附著堆積膜而 此些會在舆電衆時接觸時產生微塵。氮化魅溶射膜的算數 w句粗糙度Ra為!仁m以上則堆積膜的附著性高。而且, 雖然因接觸電衆而使堆積膜承受熱負荷,但是藉由高熱傳 71〇5-]〇188_pp 200944618 導的氮化鋁熔射膜而使溫度變化緩和。依此可以降低微塵 的產生。此處當算數平均粗糙度Ra超過15 時,為了 將基材的算數平均粗糙度以氮化鋁熔射膜被覆所需的熔射 膜厚會變厚,生i性有_會降低。此#零件的基材,除了 上述熱傳導高的材料以外,亦可使用鈦或是其他絕緣性高 的石英玻璃、H等。而且’使用藉由從構件的外侧向内 側感應結合而導入高頻的絕緣性高的基材。 ❹7105-10188-PF 10 200944618, the combination of nitriding is weak, and sometimes it is better to add the (1) group A and / or IIA compounds to strengthen the bonding between the particles. In the case of 〇.2, there is a case where the thermal conductivity is sacrificed. The aluminum nitride spray member of the present invention can be used for a film holding device or a plasma etching device for CVD or the like in semiconductor manufacturing engineering, an electrostatic holding head for supporting a wafer f plate or a heating substrate for heating a wafer substrate. Heater. Specifically, at least the first melting is formed on the base #41 of the metal ceramic composite material such as the alloy of the alloy, the gold alloy of the alloy, or the metal ceramic composite material of the first carbon stone, the stone, and the carbon cut. The film 42, the metal electrode layer or the heating layer 43, the second spray film 44, the first film, and/or the second film are the above-described nitride film, or nitrided particles and A spray film composed of a steroid and/or a IIA compound. The nitriding member of the present invention can be exposed to the electropolymerized portion of a device such as a film forming apparatus, a plasma etching apparatus, a plasma cleaning apparatus, or an ashing apparatus which is a semiconductor manufacturing process. In part, ❹ further forms the aforementioned aluminum nitride spray film. As an example of the member material formed by the above-mentioned gasification, which is used for the above-mentioned gasification part, a round cover (bell jar), a cylinder (cyHnder) or a surface of the aluminum nitride spray film may be mentioned. The roughness Ra is preferably less than 15 (four) above the melon. These parts will not only be electrically mounted on the surface of the component, but also will deposit a film on the surface of the component due to the engraving, cleaning, and ashing of the wafer. When the electric power is in contact with each other, the dust is generated. The roughness of the oxidized glaze film is Ra. The adhesion of the deposited film is high, and the deposited film is subjected to thermal load due to contact with the electrician. The temperature change is alleviated by the high heat transfer of 71〇5-]〇188_pp 200944618 aluminum nitride spray film, thereby reducing the generation of fine dust. Here, when the arithmetic average roughness Ra exceeds 15, the substrate is used. The average roughness of the arithmetic mean roughness of the molten film to be coated with the aluminum nitride spray film will increase, and the thickness of the raw material will decrease. The base material of the # part can be used in addition to the above-mentioned material having high heat conduction. Titanium or other high-insulation quartz glass, H, etc. And 'use by inwardly from the outer side in conjunction with the sensing means and the introduced high frequency insulating substrate. ❹

本發明的氮化鋁熔射構件,進一步可作為功率元件的 放熱絕緣基板。於此情況,如圖5所示的基材為金屬放熱 基板5卜於其上形成氮化鋁熔射膜52。基材可使用埶傳導 率100歸以上的銘、銦、鋼等金屬,或m石夕等 的複合金屬或合金’銘-碳切、^碳化梦等的金屬陶曼 複合材料。氮化㈣射膜52的熱傳導率較佳為1()¥/虹以 上。為了在氣化㈣射膜52的表面上搭載功率元件55而 研磨其表面,並且為了與搭载有焊料54的功率元件巧接 合,於其讀金或熔射有銅或料金屬53。 二:本發明的氮化銘熔射構件中,可使用將氮化 ㈣射膜中存在的氣孔進行封孔的物質。本發明中的封 :’所指的是在溶射膜中的氣孔填入有任意的封孔劑的狀 :、,封孔劑例如是可使用環氧系、丙烯酸系'梦系、氟系 銘的::::或是室溫硬化型的樹腊,或是聚碎氮貌、或 銘、紀的有機金屬等所構成的無機氧化物系塗佈劑。 使二::例如是可舉出在炫射膜的表面塗佈封孔劍後 的方法’或是將熔射❹真空中浸泡於液狀的封The aluminum nitride spray member of the present invention can further serve as a heat release insulating substrate for a power element. In this case, the substrate shown in Fig. 5 is a metal heat-releasing substrate 5 on which an aluminum nitride spray film 52 is formed. As the substrate, a metal ore such as a metal having a conductivity of 100 or more, a metal such as indium or steel, or a composite metal or alloy such as m-shi, such as carbon-cutting or carbonization, can be used. The thermal conductivity of the nitride (tetra) film 52 is preferably 1 () ¥ / rainbow. In order to mount the power element 55 on the surface of the vaporized (four) film 52, the surface thereof is polished, and in order to be intimately coupled with the power element on which the solder 54 is mounted, copper or metal 53 is read or melted. 2. In the nitriding injecting member of the present invention, a substance which seals pores existing in the nitride film can be used. The seal in the present invention means that the pores in the spray film are filled with an arbitrary sealant: for example, an epoxy-based or acrylic-based dream system or a fluorine-based sealant can be used as the sealant. :::: An inorganic oxide coating agent composed of a room-hardening type of tree wax or an organic metal such as a finely divided nitrogen or a mineral. The second:: for example, a method of applying a sealing sword on the surface of the smear film or a immersion in a liquid immersion in a vacuum 熔

7105-10188-PF 12 200944618 孔劑後使其硬化的方法。藉由進行封孔,氮化銘炫射膜的 強度或熱傳導率、後述的絕緣耐壓等㈣㈣㈣性提昇。 本發明的氮化銘溶射構件,氮化紹溶射膜的絕緣耐壓 較佳為0.15 MV/cra以上,更佳為〇 2MV/cm以上。絕緣耐 Ο ❹ 壓低於〇·15Μν/⑽話’在作為功率元件的放熱絕緣基板 或電紫處理裝置的構件使用時有必要加厚氮化㈣射膜的 厚度,而有可能降低對基材的放熱。提昇氮化㈣射媒的 絕緣耐壓的方法,可舉出提㈣射膜的密度或封孔等方法。 本發明的氮化鋁熔射構件的槊造方法,例如是將平均 粒徑為1 ”以上10 ”以下的氮化紹粉末供給至溶射裝 置,並藉由常壓電漿熔射在基材上形成氮化鋁熔射膜,其 中前述電漿熔射的條件為即將到達基材前的氮化銘粒子的 平均溫度為220(TC以上、2280t:以下,平均飛行速度為4〇〇 m/s以上600 m/s以下。此氮化鋁粉末的熔射時的溫度或 速度,例如是可使用加拿大的TECNAR公司製的「Dpv_2〇〇l (商品名)以進行計測。於DP卜2〇〇〇中,熔射粒子溫度或熔 射粒子的發光以2色溫度計進行計測,且粒子的飛行速度 以發光的粒子通過感測器的時間來進行計測。此粒子的溫 度未滿220 0 °c釣話則有可能熔射膜的堆積效率低,且膜的 對基板的附著變弱,超過2280t:則會促進氮化鋁的氧化、 分解。 於本發明的氮化鋁熔射構件中’為了於氮化鋁粒子間 的間隙填入ΙΠΑ族及/或IIA族化合物粒子,例如是可將 平均粒徑為1 # m以上10 " m以下的11 u族及/或Iu族 7105-10188-PF 13 200944618 化合物粉末與平均粒徑為 粉末一起供給至熔射裝要^ ^上10々®以下的氮化鋁 射膜,其t前述電槳嫁射的條^由常屢電漿熔射而得到熔 鋁粒子的平均温度 :4即將到達基材前的氮化 速度為彻…以上600 m/s以下下’平均飛行 本發明所使用的熔射原料粉末的 射法測定的平均粒徑,或以田射繞 均直徑較佳為卜1()“,更2末的攝像粉末的平 撕瓞赫1 η 佳為2〜8㈣。如使用平均 a Μ:大的粉末,如同先前所述的有可能融點高的 亂化物秦末不熔融而導致無法堆積熔射膜。而且,平均粒 控小於1…話’有可能與基材衝突的速 性變差並促進氧化,而使得氮化銘的比率下降…,! 般而言陶竟的融點高但熱傳導率低,而難以得到均句的溶 融狀態’雖然使用比金屬粉末更細粒度的粉末,由於過細 的話會產生難以投入至溶射焰中的最適位置、供給時容易 產生麻煩等問題,因此於通常的電漿中使用平均粒徑⑽〜 5" m、於高輸出高能率的氫安定化電漿的情況下使用〜 100 # m程度的粉末(例如是,請參照沖幸男等、日本熔射 協會編「熔射技術入門」(2006)第191〜192頁)。相對於 此,本發明者們所使用的原料粉末的平均粒徑與過去相 比,為相當細微的粉末。此種細微的粉末的供給,例如是 使用利用表面仿效(surface copying)式的Techn〇serve公 司製的「ΑΜ,-30」(商品名)或利用容量式的德國The〇]ic〇 公司製的「CPF-2HP」(商品名)以達成。 7105-10188-PF 14 200944618 本發明所使用的熔射膜形成方法較佳為電漿溶射。特 別疋較佳以面輸出、高氣體流量的電裝進行溶射。例如是 可舉出高輸出A 5。kW以上,高氣體流量為Μ。 SLM(StandardLmerPerMl崎)的電漿。提高輸出、氣 體流量的效果並不確定,但是被認為藉由提昇氣體流量, 氮化物粉末停留在電浆的時間短,雨抑制氧化、分解。通 常氣體流量增加的話由於粉丈去 扮末未熔融而熔射膜的堆積困 ❹ m 難,但被認為藉由增加電漿的輪出, 熔融層。 以末的表面能形成 而且,於本發明的製造方法由 M 法中,原料粉末對熔射搶的 供給較佳為供應至電漿内部的方心將粉末供給 :方,的溶射搶,例如是加拿ANQrthwestMettech公司 的AXialm」(商品名)。此溶射搶在溶射 嘴的周度的間隔設置3個電漿電極,並將溶= :投入㈣中心’因此在電漿為…2等的還原環⑽ 時,能夠防止熔射粉末因接觸氧而氧化。 圖—6所示為將粉末供給至電漿内部方式的電裝溶射裝 ^的一貫例的㈣圖°電漿炫射裝置將連接於電源68的3 個陽極61與3個陰極6。之間流動的電漿氣 =而形成的電漿嘴射聚集於集合器 :集::漿喷射作為熱源,將投入其中央的溶射粉末63: 二並將溶融的溶射粉末以電衆氣體的流速碰撞堆積二 材Q6 ’形成溶射膜67。 、基 於本發明的製造方法 形成熔射膜時的熔射氣體可7105-10188-PF 12 200944618 A method of hardening a pore agent. By performing the sealing, the strength or thermal conductivity of the glazing film, the dielectric withstand voltage described later, and the like (4) (4) (4) are improved. In the nitriding member of the present invention, the insulating withstand voltage of the nitrided spray film is preferably 0.15 MV/cra or more, more preferably 〇 2 MV/cm or more. Insulation resistance ❹ ❹ 〇 〇 Μ Μ Μ Μ Μ Μ 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在Exothermic. A method for improving the insulation withstand voltage of the nitriding (four) medium may be, for example, a method of raising the density or sealing of the film. The method for producing an aluminum nitride spray member of the present invention is, for example, that a nitrided powder having an average particle diameter of 1 ” or more and 10 Å or less is supplied to a spraying device, and is sprayed on a substrate by a normal piezoelectric slurry. Forming an aluminum nitride spray film, wherein the plasma is sprayed under the condition that the average temperature of the nitrided particles immediately before reaching the substrate is 220 (TC or more, 2280t: or less, and the average flying speed is 4〇〇m/s). The above 600 m/s or less. The temperature or speed at which the aluminum nitride powder is sprayed can be measured, for example, by using "Dpv_2〇〇l (trade name) manufactured by TECNAR, Canada. In the crucible, the temperature of the molten particles or the emission of the molten particles is measured by a two-color thermometer, and the flying speed of the particles is measured by the time that the emitted particles pass through the sensor. The temperature of the particles is less than 220 0 °c. In this case, there is a possibility that the deposition efficiency of the melted film is low, and the adhesion of the film to the substrate is weak, and if it exceeds 2,280 ton, the oxidation and decomposition of the aluminum nitride are promoted. In the aluminum nitride sprayed member of the present invention, The gap between the aluminum nitride particles is filled in the lan and/or II The Group A compound particles, for example, can be supplied to a melting group of 11 u group and/or Iu group 7105-10188-PF 13 200944618 having an average particle diameter of 1 # m or more and 10 " m or less. The shot should be on the aluminum nitride film below 10々®, and the strip of the above-mentioned electric paddle grafting is sprayed by the regular plasma to obtain the average temperature of the molten aluminum particles: 4 is about to reach the substrate. The nitriding rate is as follows: above 600 m/s or less, the average particle diameter of the spray raw material powder used in the present invention is averaged, or the average diameter of the field is preferably 1 (), The flattening 瓞 1 1 η of the image pickup powder of the second end is preferably 2 to 8 (four). If the average a Μ: large powder is used, as previously described, it is possible that the high melting point of the chaotic compound does not melt and cannot be stacked. The film is sprayed. Moreover, the average particle size is less than 1...there is a possibility that the speed of collision with the substrate is deteriorated and the oxidation is promoted, and the ratio of the nitriding is lowered...,! Generally speaking, the melting point of the ceramic is high but The thermal conductivity is low, and it is difficult to obtain the molten state of the uniform sentence, although a finer particle size than the metal powder is used. At the end, if it is too fine, there is a problem that it is difficult to put it into an optimum position in the spray flame, and it is easy to cause trouble during supply. Therefore, an average particle diameter (10) to 5" m is used for normal plasma, and hydrogen stability at a high output and high energy rate is used. For the case of the plasma, use a powder of the degree of ~100 #m (for example, please refer to 冲幸男, etc., and the Japan Spray Association, "Introduction to Spray Technology" (2006), pp. 191-192). The average particle diameter of the raw material powder used by the inventors is a relatively fine powder as compared with the past. The supply of such a fine powder is, for example, a Techn〇serve company using a surface copying type. ΑΜ, -30" (trade name) or "CPF-2HP" (trade name) made by the German company "The 〇] company. 7105-10188-PF 14 200944618 The method of forming a spray film used in the present invention is preferably plasma spray. In particular, it is preferred to perform the sputtering by means of a surface output and a high gas flow. For example, high output A 5 can be cited. Above kW, the high gas flow rate is Μ. SLM (StandardLmerPerMl Saki) plasma. The effect of increasing the output and gas flow rate is not certain, but it is considered that by increasing the gas flow rate, the time during which the nitride powder stays in the plasma is short, and the rain suppresses oxidation and decomposition. Usually, if the gas flow rate is increased, it is difficult to form a molten film because the powder is not melted, but it is considered to be a molten layer by increasing the rotation of the plasma. Further, in the manufacturing method of the present invention, in the M method, the supply of the raw material powder to the melt blast is preferably supplied to the center of the plasma to supply the powder: AXialm (trade name) of ANQrthwestMettech, Canada. This blasting is set at the interval of the circumference of the nozzle to set three plasma electrodes, and dissolves: :puts into (four) the center'. Therefore, when the plasma is a reducing ring (10) such as ... 2, it is possible to prevent the molten powder from being exposed to oxygen. Oxidation. Fig. 6 shows a conventional example of the electric charge dissolving device for supplying powder to the internal state of the plasma. (4) The plasma squeezing device will be connected to the three anodes 61 and the three cathodes 6 of the power source 68. Between the flowing plasma gas = the formed plasma nozzle is concentrated in the collector: Set:: slurry jet as a heat source, will be injected into the center of the spray powder 63: two and melt the molten powder as the flow rate of the electricity gas Collision stacking two materials Q6 'forms a spray film 67. According to the manufacturing method of the present invention, the molten gas when forming the spray film can be

7105-10188-PF 15 200944618 使用N2、Ar等惰性氣體或是&等還原氣體。在溶射氣體中 存在氧的話則熔射原料粉末中的氮於熔射中氧化’而使得 熔射膜中的氮含量大幅降低,因此溶射氣體中的氧濃度較 佳為儘可能的低,但是在常溫常塵的一般環境中溶射氣化 物粉末時’藉由提昇嫁射的輸出,高溫飛行的熔射粉末或 堆積後的熔射粉末的表面有少量變化為氧化物,此氧化物 被認為擔當了連結氮化物彼此的角色。熔射膜中的氮化物 的存在與其量,能夠藉由對熔射膜表面以χ線繞射法確 認,熔射膜中的氮的量,可藉由ΕΡΜΑ測定。而且,熔射臈 中的ΙΠΑ族及/或m族的量,可藉由進行螢光X線分析 等以測定。 於本發明的製造方法中,常堡下溶射搶前端與基板間 距離為熔射距離65,較佳為4〇〜15〇随。溶射距離超過 150㈣的話’熔射粉末附著在基板上之前會先被冷卻,有 時會無法在基板上堆積熔射膜,熔射距離短於40随的話 基材與熔射膜兩者的溫度上升,成為熔射膜或基材破裂的 原因,或是有時會降低熔射膜中的氮含量。 而且’將㈣㈣射於基材時投人的熔射功率依 使用的襄置而不同’例如是圖6所示的電聚溶射裝置的情 況’熔射功率例如是可為5。kw以上150 kW以下。 法以中’說明藉由高輸出、高氣體流量的電㈣射 本發:的氣化㈣射構件,但是接著以下表示不 本:二!5、南氣體’量,而藉由其他的電漿熔射法得到 的氮化鋁熔射構件的製造方法。7105-10188-PF 15 200944618 Use an inert gas such as N2 or Ar or a reducing gas such as & If oxygen is present in the molten gas, the nitrogen in the molten raw material powder is oxidized in the spray', so that the nitrogen content in the sprayed film is greatly lowered, so the oxygen concentration in the molten gas is preferably as low as possible, but When the vaporized powder is sprayed in the general environment of normal temperature and normal dust, the surface of the spray powder after high-temperature flight or the powder powder after deposition has a small amount of oxide, which is considered to be responsible for by the increase of the output of the grafting. Link the roles of nitrides to each other. The presence and amount of the nitride in the spray film can be confirmed by the enthalpy diffraction method on the surface of the spray film, and the amount of nitrogen in the spray film can be measured by enthalpy. Further, the amount of the lanthanum and/or m group in the spray enthalpy can be measured by performing fluorescence X-ray analysis or the like. In the manufacturing method of the present invention, the distance between the front end of the spray and the substrate is a spray distance of 65, preferably 4 〇 15 15 。. If the spray distance exceeds 150 (four), the molten powder will be cooled before it adheres to the substrate, and the spray film may not be deposited on the substrate. The spray distance is shorter than 40 and the temperature of both the substrate and the spray film rises. It becomes the cause of cracking of the spray film or the substrate, or sometimes reduces the nitrogen content in the spray film. Further, the firing power of the incident when the (four) (four) is incident on the substrate differs depending on the use of the device, for example, the case of the electropolymerization device shown in Fig. 6, and the melt power can be, for example, 5. More than 150 kW above kw. In the middle of the law, the electricity is output by the high-output, high-gas flow (four). The gasification (four) is the component, but the following is not the case: two! 5. A method of producing an aluminum nitride spray member obtained by another plasma spray method.

7105-10188-PF 16 200944618 亦即是’⑴將添加有平均粒徑為“ 以下的氮化⑽末與相對於Μ心Μ” ^ ㈣的潤滑劑的混合粉末,或是將添加 程:: ❹ 以,…的nu族及灿族化合物:二: =為1 “以上10 “以下的氮化㈣末與相對於此此 粉末的合計重量為°,1〜5,潤滑劑的混合粉末作為: 射粉末供給至溶射裝置’並藉由常堡電㈣射在基材上形 成氮化㈣射族的方法,或是⑵將平均粒徑為i ^以 上10㈣以下的氛化銘粉末,或是將平均粒徑為i ^以 上10 Am以下的mA族及/或IIA族化合物粉末與平均粒 徑為1 /Z1D以上10 Aln以下的氮化鋁粉末的混合粉末於 熔射搶的電漿出口外側以2個以上的位置垂直於電漿喷射 且相對向的進行供給,並藉由常壓電漿熔射在基材上形成 氮化鋁熔射膜的方法,其中前述電漿熔射的條件為熔射距 離為40 mm以上70 mm以下。 ❹ 首先’於(1)的製造方法中,其特徵在於將添加有平均 粒徑為1 /zm以上1〇 以下的氮化鋁粉末與相對於該氮 化銘粉末的重量為01〜5 wt%的潤滑劑的混合粉末,或是 將添加有平均粒徑為丨以上1〇 以下的IIIA族及/ 或ΙΙΑ族化合物粉末、平均粒徑為〗#以上以下 的氮化銘粉末與相對於此些粉末的合計重量為〇. 1〜5 wt% 的潤滑劑的混合粉末作為熔射粉末使用。 潤滑劑例.如是可舉出硬脂酸、二十二脂酸、二十四脂 酸專的飽和腊肪酸或石壤等。藉由將此些潤滑劑添加於熔7105-10188-PF 16 200944618 That is, '(1) a mixed powder of a lubricant having an average particle diameter of "below nitridation (10) and relative to Μ Μ" ^ (4), or an addition procedure: ❹ The nu and the can compound of the ...: 2: = 1 "10" or more of the following nitriding (4) and the total weight of the powder is °, 1 to 5, the mixed powder of the lubricant as: The powder is supplied to the spraying device and is formed by the method of forming a nitride (tetra) shot on the substrate by using Changbao Electric (4), or (2) by using an average particle size of i ^ or more and 10 (four) or less, or a mixed powder of a mA group and/or a Group IIA compound powder having a particle diameter of i ^ or more and 10 Am or less and an aluminum nitride powder having an average particle diameter of 1 /Z1D or more and 10 Aln or less is disposed outside the sprayed plasma outlet. More than one position is perpendicular to the plasma jet and is supplied oppositely, and a method of forming an aluminum nitride spray film on the substrate by spraying a normal piezoelectric slurry, wherein the condition of the plasma spray is sprayed The distance is 40 mm or more and 70 mm or less. ❹ First, in the manufacturing method of (1), the aluminum nitride powder having an average particle diameter of 1 / zm or more and 1 〇 or less is added and the weight of the aluminum nitride powder is 01 to 5 wt% with respect to the nitriding powder. a mixed powder of a lubricant or a group IIIA and/or steroid powder having an average particle diameter of 1 〇 or more and a nitriding powder having an average particle diameter of ≤ # or more and the like The total weight of the powder is 〇. 1 to 5 wt% of the mixed powder of the lubricant is used as a spray powder. Examples of the lubricant include stearic acid, behenic acid, tetrabasic acid-saturated saturated fatty acid or rocky soil. By adding these lubricants to the melt

7105-10188-PF 17 200944618 射原料粉末中’能夠在不以高氣體流量將熔射原料粉末供 給熔射裝置的情況下進行熔射,並產生減少熔射原料粉末 在供給中阻塞或供給量變動等問題的效果。此原理被認為 是因粉末表面存在的潤滑劑而減少了粉末彼此之間的摩 擦。7105-10188-PF 17 200944618 In the raw material powder, it is capable of being sprayed without supplying the molten raw material powder to the spray device at a high gas flow rate, and produces a decrease in the supply of the molten raw material powder or a change in the supply amount. The effect of the problem. This principle is believed to reduce the friction of the powders with each other due to the presence of lubricant on the surface of the powder.

潤滑劑的量在氮化鋁粉末單獨作為熔射粉末使用時, 添加氮化鋁粉末重量的〇.1〜5 wt%的量,在將氮化鋁粉末 與IIIA族及/或IU族化合物的混合粉末作為熔射粉末使 用時,添加混合粉末重量的0>1〜5 wt%的量。潤滑劑的添 加量少於0.1 的話潤滑效果減少,容易發生供給上的 問題’多力5 的話由於潤滑劑會殘留在溶射膜而有時 會有造成熔射膜的膜質降低的疑慮。 在氮化鋁粉末添加潤滑劑或是在氮化鋁粉末與HU 族及/或ΠΑ族化合物的混合粉末添加潤滑劑的方法,例如 是將個別的粉末與潤滑劑以乾式或濕式的球磨機進行混 合0 依此調製的熔射原料粉末,為了提昇流動性使用通 常的碟式供給機(例如I Sulzer Metc〇公司製的 「TwiW」C商品名)或praxai^製的「i264p概^ Feeder」「(商品名))、振動式供給機(例如是^⑽⑽公 旧㈣」(商品名))、流動床式供給機⑷如是 二:::广。公司製的「·」、「5MPE」、「9MP」(商 口口名))等’供給至不依用古私 ^ 吏用间輸出·、南氣體流量的熔射裝置, 而能夠製造本發明的氮化鋁構件。The amount of the lubricant is increased by the amount of 氮化.1 to 5 wt% of the weight of the aluminum nitride powder when the aluminum nitride powder is used alone as the molten powder, in the aluminum nitride powder and the IIIA group and/or the IU compound. When the mixed powder is used as a spray powder, an amount of 0 to 1 wt% of the weight of the mixed powder is added. When the amount of the lubricant is less than 0.1, the lubricating effect is reduced, and the problem of the supply is likely to occur. When the amount of the lubricant is 5, the lubricant may remain in the spray film, which may cause a decrease in the film quality of the spray film. Adding a lubricant to an aluminum nitride powder or a method of adding a lubricant to a mixed powder of an aluminum nitride powder and a HU group and/or a steroid, for example, a separate powder and a lubricant in a dry or wet ball mill In order to improve the fluidity, a normal dish feeder (for example, "TwiW" C product name by I Sulzer Metc Co., Ltd.) or "i264p summary ^ Feeder" by praxai^ is used. (product name)), vibrating feeder (for example, ^(10)(10) public (four)" (trade name)), and the fluidized bed feeder (4) is two:: wide. "·········································································· Aluminum nitride component.

7105-10188-PF 18 200944618 另一方面’於(2)的製造方法中,其特徵為將平均粒徑 為1 /im以上1〇 以下的氮化鋁粉末,或是將平均粒徑 為1 //in以上10 以下的IIIA族及/或ΠΑ族化合物粉 末與平均粒徑為1 y m以上1 〇 A m以下的氮化鋁粉末的混 合粉末,於熔射搶的電漿出口外側以2個以上的位置垂直 於電聚喷射且相對向的進行供給,並且常壓電漿熔射的條 件為溶射距離為4 〇關以上7 0 mm以下。 φ 將氮化銘粉末,或是將ΙΠΑ族及/或ΠΑ族化合物粉 末與氮化鋁粉末的混合粉末,於熔射搶的電漿出口外側以 2個以上的位置垂直於電漿喷射且相對向的進行供給狀態 的一實例如圖12所示。熔射原料粉末(121)藉由粉末供給 機(122)使用He等惰性氣體(123)進行供給。於途中分叉為 一分支(124)亦或是使用2台的供給機,在2個位置(圖12 的情況)垂直於自溶射搶(126)產生的電漿噴射部份(125) 且相對向的進行供給。此種的熔射裝置例如是公 _司製的SG-1 〇〇」(商品名)或Sulzer Metc〇公司製的 9MB」、「F4」、「Triplex」(商品名)等的熔射裝置。 ,用於供給熔融原料粉末的He等的惰性氣體的供給量 較佳為5〜30 SLM。惰性氣體的供給量低於5 SU的話細 的秦末難以流動’高於3G SLM的話有時會有使電漿喷射變 弱’溶射膜的附著量減少或膜質降低的疑慮。而且,以2 處以上對向供給的理由在於,如果不採對向、而以相對於 、漿僅以向供給電聚的肖,有時會有粉末穿透電漿 的疑慮,但是如採用對向的話粉末容易進入電漿中,特別 19 200944618 是容易進入其中心。 然後,熔射距離較佳為40〜7〇觀。熔射距離超過Μ咖 的話於基板上附著熔射粉末前粉末就被冷卻,有時會有 無法在基板上堆積熔射膜的情況,熔射距離短於4〇 的 話基材與熔射膜兩者的溫度上彳’有時會成為熔射膜或基 材破裂的原因,g是產生溶射媒中的氮含量降低或組成變 化的情況。 ❹ 而且,此些熔射裝置形成熔射膜時的熔射氣體,主氣 體較佳例如是使用紅及/或N”副氣體較佳例如是使用 藉由使用I而使得電漿的熱量與電漿喷射的速度上升,而 且藉由使熔射距離為40〜7〇则1,飛行的熔射粉末以及堆 積後的熔射粉末的表面成為高溫,其一部份變化為氧化 物此氧化物被認為擔任了使氮化物彼此連結的角色。主 氣體的Ar及/或N2與副氣體的Hz的氣體流量,依照熔射裝 置的不同而多少有些差異’但是較佳個別為6〇則以上、 φ 1〜15 SLM 。 而且含有潤/骨劑的溶射原料粉末當然亦能夠適用於 (2)的發明。 [發明的效果] 本發月的氮化銘構件藉由溶射而將氮化銘所持有的優 良特性賦予構件表*,在使用於半導體等的t造的靜電固 2頭、加熱器、電漿處理裝置反應室時,具有絕緣性以及 高熱傳導性,能夠使晶圓的面内溫度分哼均勻,因而能夠 安定的進行處S。而且在使用於功率元件的放熱絕緣基板7105-10188-PF 18 200944618 On the other hand, in the manufacturing method of (2), the aluminum nitride powder having an average particle diameter of 1 / im or more and 1 or less or an average particle diameter of 1 / a mixed powder of a group IIIA and/or steroid powder having a size of at least 10 or more and an aluminum nitride powder having an average particle diameter of 1 μm or more and 1 〇A m or less, or more than 2 or more outside the plasma outlet of the melted film The position is perpendicular to the electrospray jet and is supplied in the opposite direction, and the condition of the normal piezoelectric slurry is such that the spray distance is 4 〇 or more and 70 mm or less. φ Nitrogen powder, or a mixed powder of lanthanum and / or steroid powder and aluminum nitride powder, sprayed perpendicular to the plasma at two or more positions outside the spray plasma outlet and relative An example of the supply state to the direction is shown in FIG. The molten material powder (121) is supplied by a powder feeder (122) using an inert gas (123) such as He. Dividing into a branch (124) on the way or using two feeders, in two positions (in the case of Fig. 12) perpendicular to the plasma jet portion (125) generated by the self-dissolving shot (126) and relative Supply to the source. Such a spray device is, for example, a spray device such as SG-1 〇〇 (trade name) manufactured by Seiko Co., Ltd., or 9 MB", "F4", or "Triplex" (trade name) manufactured by Sulzer Metc. The supply amount of the inert gas such as He for supplying the molten raw material powder is preferably 5 to 30 SLM. When the supply amount of the inert gas is less than 5 SU, it is difficult to flow at the end of the fineness. When the amount is higher than the 3G SLM, the plasma spray may be weakened. The adhesion amount of the spray film may be reduced or the film quality may be lowered. Further, the reason why the two or more are supplied in the opposite direction is that if the opposite direction is not used, and the electromagnetism is supplied only with respect to the slurry, the powder may penetrate the plasma, but the pair may be used. If the powder is easy to enter the plasma, the special 19 200944618 is easy to enter its center. Then, the melting distance is preferably 40 to 7 Å. If the distance of the spray exceeds that of the coffee, the powder is cooled before the spray powder adheres to the substrate. In some cases, the spray film may not be deposited on the substrate. If the spray distance is shorter than 4 Å, the substrate and the spray film are both The temperature rise of the person may sometimes cause the fracture of the spray film or the substrate, and g may cause a decrease in the nitrogen content or a change in composition of the dissolution medium. ❹ Moreover, such a spraying device forms a molten gas when the molten film is formed, and the main gas is preferably, for example, a red and/or N" auxiliary gas, for example, using heat and electricity of the plasma by using I. The speed of the slurry jet rises, and by making the melt distance 40 to 7 〇1, the surface of the spray powder and the powder powder after the deposition become high temperature, and a part of the change is oxide. It is considered that the role of the nitrides is connected to each other. The gas flow rate of Ar and/or N2 of the main gas and the Hz of the sub-gas varies somewhat depending on the melting device, but it is preferably 6 〇 or more, φ 1 to 15 SLM. The molten material powder containing the moisturizing/bone agent can of course be applied to the invention of (2). [Effects of the Invention] The nitriding member of this month is held by the nitrite by the spray. The excellent characteristic imparting member table* has insulating properties and high thermal conductivity when used in an electrostatic solid head made of a semiconductor or the like, a heater, or a plasma processing apparatus reaction chamber, and can be used to divide the in-plane temperature of the wafer. Uniform, so stable Execution S. And in the heat-dissipating insulating substrate used for the power component

7105-10188-PF 20 200944618 時’能夠容易的提供大面積且絕緣層薄的絕緣基板。 [實施例] 本發明基於實施例而進行詳細的說明,但是本發明並 不限定於此些實施例。 尚且,構成以下的實施例'比較例的熔射膜的粉末的 平均直徑、孔隙率、絕緣耐壓如同下述的進行測定。 (1) 平均直徑 _ ,從熔射膜斷面的於SEM# 1 000倍的倍率觀察所得的觀 察影像,計測可觀察的個別粒子的直徑,求其平均值。 (2) 孔隙率 從熔射膜斷面於SEM以1000倍的倍率觀察所得的影 像’追蹤氣孔的部份。此已追蹤的氣孔部份的面積使用“NO System公司的「Nanohiinter」(商品名)進行計測。而且, 亦測定含氣孔的熔射膜全體的面積,並將氣孔部份的面積 除以熔射膜的面積以求出孔隙率。 (3) 絕緣耐壓 如圖7所示,在使用堆積有1〇〇 鋁熔射膜?2的石 墨73以作為熔射基材的氮化鋁熔射膜71上壓附直徑^㈣ 的電極74,石墨亦與電極連接,使用菊水電子工業(股)製 的耐電壓試驗機75「TOS8750」(商品名),以此、\ ^的 條件缓緩的將電壓上升至5 ”以測定絕緣破壞電壓。 實施例1 ,將東洋鋁(股)製的氮化鋁粉夂FLC(平均粒徑4.2 使用Northwest Mettech公司製的熔射裝置「Axial ΙΠ」 7105-1 〇i°88-PF 01 200944618 (商〇〇名)熔射至石英玻璃基材上。粉末的供給使用德國 Thennico公司製的「CPF_2flp」(商品名)。 用於熔射的石英玻璃基板,使用對於藉由喷砂使表面 粗縫度Ra為5以m的石英玻璃,再以5%氣酸處理2小時 而得的表面粗糙度h為8 的石英玻璃。 ❹ 此時的熔射條件為於常壓、熔射距離1〇〇咖、電漿功 率為95 kW作為熔射氣體的Ar、沁與h氣體合併以"ο SLM 机動、上述氮化鋁粉末以15 g/分的供給量流動,熔射搶 以400随/秒的速度移動,並進行2〇道次(卿s)溶射。此 熔射中粒子的速度、溫度以加拿大的TE圓公司製的 DPV 2000」(商品名)測定,為59〇瓜,秒、挪代。 此成膜的溶射膜的膜厚為12〇 “、表面粗糖度為9 ㈣1 X線繞射法解析構成相的話’觀察到六方晶氮化链 與r氧化銘,六方晶氧化銘的(1〇〇)面與^氧化銘(刪) 面的X線繞射的峰強度比為°·11。而且,此炫射膜的斷面 以SEM觀察,是由平均直徑為4㈣程度的球狀粒子構成, =以SEM觀察此斷面所得的影像,以影像解析法測定孔隙 率’則孔隙率為27%。 實施例.2 溶射條件除了將電漿氣體流量改變為⑽〜28〇 _、輸出改變為6°〜1㈣、溶射距離改變為6。〜14〇 ^以外,以與實施例1相同的條件進行熔射,測定飛行中 Γ^Γ、速度與溶射的膜厚、六方晶氣化叙的峰強产 所示,熔射膜的膜厚隨著飛行中的粉末溫度:7105-10188-PF 20 200944618 When an insulating substrate having a large area and a thin insulating layer can be easily provided. [Examples] The present invention is described in detail based on the examples, but the present invention is not limited to the examples. In addition, the average diameter, porosity, and insulation withstand voltage of the powder constituting the molten film of the comparative example of the following Example were measured as follows. (1) Average diameter _ , The observed image was observed from the magnification of the SEM# 1,000-fold magnification of the melt film section, and the diameter of the observed individual particles was measured, and the average value was obtained. (2) Porosity The image obtained by observing the pores at a magnification of 1000 times from the SEM of the cross section of the melt film was traced. The area of the tracked vent portion was measured using "Nanohiinter" (trade name) of NO System. Further, the area of the entire molten film containing the pores was measured, and the area of the pore portion was divided by the area of the sprayed film to determine the porosity. (3) Insulation withstand voltage As shown in Figure 7, is there a 1〇〇 aluminum melt film deposited? The graphite 73 of 2 is pressed with an electrode 74 of a diameter (4) on the aluminum nitride spray film 71 as a molten base material, and the graphite is also connected to the electrode, and a withstand voltage tester 75 "TOS8750" manufactured by Kikusui Electronics Co., Ltd. is used. (Product name), the voltage was gradually increased to 5 ” under the condition of \ ^ to measure the dielectric breakdown voltage. Example 1 , Aluminum nitride powder made of Toyo Aluminum Co., Ltd. FLC (average particle diameter) 4.2 The sprayer "Axial ΙΠ" 7105-1 〇i°88-PF 01 200944618 (trade name) manufactured by Northwest Mettech Co., Ltd. was sprayed onto a quartz glass substrate. The powder was supplied by the company Thennico, Germany. CPF_2flp" (trade name). For the quartz glass substrate to be sprayed, the surface roughness is obtained by using quartz glass having a surface roughness Ra of 5 m by sand blasting and then treating with 5% gas acid for 2 hours. Quartz glass with degree h is 8. ❹ The spraying conditions at this time are at normal pressure, the melting distance is 1 〇〇, the plasma power is 95 kW, and the Ar, 沁 and h gases are combined as the spray gas. SLM maneuver, the above aluminum nitride powder flows at a supply of 15 g/min, and the spray is robbed 400 is moved at a speed of /second, and is sprayed at 2 passes. The speed and temperature of the particles in this spray are measured by DPV 2000" (trade name) manufactured by TE Company of Canada, which is 59 melons. , seconds, Norday. The film thickness of the film formed by this film is 12 〇 ", and the surface roughness is 9 (four) 1 X-ray diffraction method to analyze the phase of the structure.] The hexagonal nitriding chain and the r-oxidation are observed. The peak intensity ratio of the X-ray diffraction of the surface of the oxidized (1〇〇) surface and the oxidized (deleted) surface is °·11. Moreover, the cross section of the glare film is observed by SEM, and the average diameter is 4 (four). The degree of spherical particles is composed, = the image obtained by observing the cross section by SEM, and the porosity by the image analysis method is 'the porosity is 27%. Example 2. The spraying condition is changed to the plasma gas flow rate to (10) to 28 〇_, the output was changed to 6° to 1 (four), and the spray distance was changed to 6. 14.14 〇^, and the same conditions as in Example 1 were carried out, and the film thickness during the flight, the speed and the film thickness of the spray were measured, and the hexagonal As shown by the strong peak production of crystallization, the film thickness of the spray film follows the powder temperature in flight:

71〇5-]〇188-PF 22 200944618 上升而共同上升,但是超過2280 °C的話氧化鋁的比率增 加,六方晶氮化鋁的比率急速的減少。而且,低於2 2〇〇<)(: 的話’溶射膜的堆積變少。 實施例3 使用表面經由噴砂在其上堆積有鋁熔射膜的石墨作為 熔射基材,使用混合比率經過變化的氮化鋁粉末與氧化釔 (曰本紀製4N、平均粒徑4 em)或是氧化鎂(高純度化學製 ❹ 2N平均粒么4 vm)的混合粉末作為溶射用粉末,以與實 施例1相同的條件進行溶射。對於此熔射膜,以螢光X線 分析而測定熔射膜中的氧化釔或氧化鎂的量,對以sem觀 察熔射膜斷面所得的影像,以影像解析法測定孔隙率,利 用ULPAC理工(股)公司製的「LaserpjT」(商品名)進行熱 傳導率的測定。其結果表示於表丨。熔射膜的氧化釔的含 量為7-30重量%、氧化鎂的含量為8重量%、孔隙率為 11-13%、六方晶氮化鋁的峰強度比為〇11_〇12,熱傳導 ® 率為U_46 W/mK。而且,任一熔射膜亦由平均直徑為4以m 程度的球狀粒子所構成。氧化㈣含量7重量%的溶射_ 面的SEM像如圖9所示。氣化纪的含量3_溶射媒斷面 的依照ΕΡΜΑ的A1、N、Y分佈如圖1〇所示。粒子狀的ai、 N的間隙中具有γ濃度高的部份,確認在氮化鋁粒子的間 隙之間存在有氧化纪。71〇5-]〇188-PF 22 200944618 rises and rises together, but when it exceeds 2280 °C, the ratio of alumina increases, and the ratio of hexagonal aluminum nitride decreases rapidly. Further, when it is less than 2 2 〇〇 <) (: 'the deposition of the molten film is small. Example 3 Using graphite having an aluminum melted film deposited thereon by sand blasting as a molten base material, the mixing ratio is used. A mixed powder of changed aluminum nitride powder and cerium oxide (4N, average particle size 4 em) or magnesium oxide (high purity chemical ❹ 2N average particle 4 vm) as a powder for spraying, and examples 1 The same conditions were used for the spraying. For this molten film, the amount of cerium oxide or magnesium oxide in the molten film was measured by fluorescent X-ray analysis, and the image obtained by observing the cross section of the molten film by sem was analyzed by image analysis. The porosity was measured, and the thermal conductivity was measured by "LaserpjT" (trade name) manufactured by ULPAC Co., Ltd. The results are shown in Table 1. The content of yttrium oxide in the spray film is 7 to 30% by weight, and oxidation is performed. The content of magnesium is 8% by weight, the porosity is 11-13%, the peak intensity ratio of hexagonal aluminum nitride is 〇11_〇12, and the heat conduction rate is U_46 W/mK. Moreover, any of the spray films is also The average diameter is composed of spherical particles of about 4 m. Oxidation (4) The SEM image of 7 wt% of the solute_face is shown in Fig. 9. The content of the gasification zone is 3, and the distribution of the A1, N, and Y of the cross section of the solvent is shown in Fig. 1A. The particulate ai, N The portion having a high γ concentration in the gap confirmed that there was an oxidation period between the gaps of the aluminum nitride particles.

7105-10188-PF 23 200944618 表1 Y203含量(重量%) 孔隙率(%) 熱傳導率(W/mK) A1203/A1NC-) 7 13 43 0. 12 21 11 46 0. 11 30 11 11 0.11 MgO含量(重量%) 孔隙率(%) 熱傳導率(ff/mK) A1203/A1NC-) 10 11 34 0.117105-10188-PF 23 200944618 Table 1 Y203 content (% by weight) Porosity (%) Thermal conductivity (W/mK) A1203/A1NC-) 7 13 43 0. 12 21 11 46 0. 11 30 11 11 0.11 MgO content (% by weight) Porosity (%) Thermal conductivity (ff/mK) A1203/A1NC-) 10 11 34 0.11

實施例4 對如圖11所示的電漿清潔裝置的石英製的鐘罩U1& 及環狀絕緣基台112的表面喷砂而使得表面粗糙度個別為 仁m。使用與實施例3相同的氮化鋁粉末及氧化妃 粉末,除了氧化釔粉末的混合比率為2 wt%、道次數目僅 為15以外,以與實施例]相同的條件進行熔射,得到平均 膜厚90 p的氮化㈣射構件。鐘罩lu、環狀絕緣基台 112的表面粗糙度個別為8、7、4 必要的構件以超純水超音波洗淨, s曼於電槳清潔裝置的反應室。 實施例5 以m。將此些構件與其他 於清潔烘箱乾燥後,裝 準備作為基材的電氣化學 碳化一「US叫⑽」(業商=限公司製的-- 實施例相同的條件製作表丨的於其表面以舆 射膜。 虱化釔3量7WU的氮化鋁熔 對此氮化紹表面以封 孔劑進行封孔 封孔劑可為由烷[Embodiment 4] The surfaces of the quartz bell jar U1& and the annular insulating base 112 of the plasma cleaning apparatus shown in Fig. 11 were sandblasted so that the surface roughness was individually m. The same aluminum nitride powder and cerium oxide powder as in Example 3 were used, except that the mixing ratio of the cerium oxide powder was 2 wt%, and the number of passes was only 15, and the same conditions as in the Example] were carried out to obtain an average value. A nitride (tetra) projecting member having a film thickness of 90 p. The surface roughness of the bell jar lu and the annular insulating base 112 is 8, 8, and 4, respectively. The necessary components are ultrasonically cleaned by ultrapure water, and the reaction chamber of the electric paddle cleaning device is used. Example 5 is in m. After drying these components and other cleaning ovens, the electrochemical carbonization prepared as a substrate is prepared on the surface of the surface by the same conditions as those of the "US" (10).舆 膜 。 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量 量

7105-10188-PF 24 200944618 氧石夕烧化合物構成的碎系樹脂如D&D股份有限公司製的 「Permeate HS-10 0 clear」(商品名),環氧樹脂與硬化物 的混合物如PELN0X股份有限公司製的「peinox WE-1263 與「Pelcure HV-126」(商品名)的混合物,作為二氧化石夕 (silica)塗佈劑的聚碎氣娱《的Clariant in Japan股份有 限公司製的「Aquamika」(商品名)。 封孔方法是將抽真空的試樣浸泡於permeate 10 0 clear後放置於室溫,將抽真空的試樣浸泡於PelnQx WE-1263/Pelcure HV-126的混合物後以i3〇°c硬化2小 時。Aquamika是喷灑於熔射膜表面後以15(rc硬化i小時, 此由喷灑至硬化的製程進行2次。此封孔前試樣的孔隙率 為10 %,在封孔後任一個均無氣孔。 對已進行封孔的氮化鋁熔射膜與無封孔的氮化鋁熔射 膜進行研磨,以使表面經研磨的氮化鋁熔射膜的膜厚為 # m,進行絕緣耐壓的測試。絕緣耐壓試驗機的性能為至5 Ο M,但已封孔的試樣全部超過5 kV、並為0.25 MV/cm以 上。無封孔的氮化鋁熔射膜的絕緣耐壓為〇. 16 Mv/cm。 實施例6 對於9〇wt%的氮化鋁粉末與1〇wt%的氧化釔粉末(日本 釔裝4N +均粒徑4 " m)的混合粉末,作為潤滑劑的硬脂 、0 °· 3 2 ' 4、6 wt%進行添加,個別以乾式球磨機 混合以調製溶射原料粉東 灯物不,並以Sulzer Metco公司製的 5 MPE」(商品名),使作 At ^ s* λα tr *史作為供給虱體的fle以25 L/min.流 動以進行供給測試。而且以盘杳站么丨!, 儿以與實施例1相同的條件形成熔7105-10188-PF 24 200944618 A pulverized resin composed of a oxy-stone compound such as "Permeate HS-10 0 clear" (trade name) manufactured by D&D Co., Ltd., a mixture of epoxy resin and hardened material such as PELN0X Co., Ltd. made a mixture of "peinox WE-1263" and "Pelcure HV-126" (trade name), which is made by Clariant in Japan Co., Ltd. as a coating agent for silica dioxide. Aquamika" (trade name). The sealing method is that the vacuumed sample is immersed in permeate 10 0 clear, left at room temperature, and the vacuumed sample is immersed in a mixture of PelnQx WE-1263/Pelcure HV-126 and hardened by i3〇°c for 2 hours. . Aquamika is sprayed on the surface of the spray film at 15 (rc hardening for 1 hour, this process is carried out by spraying to hardening twice. The porosity of the sample before sealing is 10%, no one after sealing. Porosity. The aluminum nitride spray film that has been sealed and the aluminum nitride spray film that is not sealed are ground so that the surface of the ground aluminum nitride spray film has a thickness of #m, and is insulated. Pressure test. The performance of the insulation withstand tester is up to 5 Ο M, but the samples that have been sealed are all over 5 kV and above 0.25 MV/cm. The insulation resistance of the unsealed aluminum nitride spray film The pressure is M16 Mv/cm. Example 6 As a mixed powder of 9 〇wt% of aluminum nitride powder and 1 〇wt% of cerium oxide powder (Japanese armor 4N + average particle size 4 " m) The hard fat of the lubricant, 0 ° · 3 2 ' 4, 6 wt% was added, and the mixture was separately mixed in a dry ball mill to prepare the molten material powder, and the 5 MPE" (trade name) manufactured by Sulzer Metco Co., Ltd. Let the history of At ^ s* λα tr * as the supply of the steroids flow at 25 L/min. to perform the supply test, and take the 杳 丨 丨 , , , , , , , , , , , 实施 实施 实施The same conditions form a melting

7105-10188-PF 25 200944618 射膜。供給性的評價方法為供給中粉末的流量無變化的碑 認(脈動)、粉末供給的連續性的確認。而且’進行熔射膜 的外觀觀察。結果如表2所.示。 添加硬脂酸的粉末全部沒有粉末流量的變化,亦確認 了供給的連續性’而能夠供給1G分鐘以上。無添加硬脂酸 的物末見到了偶爾(〇ceasiQnally)的脈動。使用添加6㈣ 硬脂酸的粉末所形成的熔射膜,熔射膜著色為淡茶色。 表2 硬脂酸添加量(wt%) 0 Q.3 〇 ——-_ 〇 4 〇 〇 粉末流量變化 △ 有脈動 一 —--- 正常 正常 正常 正常 熔射膜外觀 〇 〇 〇 〇 △ 良好 良好 良好 良好 有著色7105-10188-PF 25 200944618 Film. The evaluation method of the supply is to confirm the flow (pulsation) of the flow rate of the powder in the supply and the continuity of the powder supply. Further, the appearance of the spray film was observed. The results are shown in Table 2. All of the stearic acid-added powders did not have a change in the flow rate of the powder, and the continuity of the supply was confirmed, and it was possible to supply 1 Gmin or more. Occasionally (〇ceasiQnally) pulsation was seen in the absence of stearic acid. The spray film formed by adding a powder of 6 (tetra) stearic acid was colored in a pale brown color. Table 2 Stearic acid addition amount (wt%) 0 Q.3 〇——-_ 〇4 〇〇Powder flow change △ There is pulsation one---- Normal normal normal normal spray film appearance 〇〇〇〇△ Good Good and good coloring

實施例7 除了使用1 的石蟻(融點68〜7〇。〇以外,以與實 施例6相同的方法進行粉末供給的測試。添加石蟻的粉末 的粉末流量無變化’亦能夠確認供給的連續性,而能夠進 行10分鐘以上的供給。 實施例8 ,子於90wt/0的氮化鋁粉末與1〇wt%的氧化釔粉末(日本 :製4N、平均粒徑4的混合粉末,添加工评制硬脂 、、乾式球磨機混合的粉末作為溶射原料粉末,將此Example 7 In addition to the use of stone ants of 1 (melting point 68 to 7 〇. 〇, the powder supply test was carried out in the same manner as in Example 6. The powder flow rate of the powder of the added stone ant was not changed') Continuously, it can be supplied for 10 minutes or more. Example 8: aluminum nitride powder of 90 wt/0 and cerium oxide powder of 1 〇 wt% (Japan: 4N, mixed powder of average particle diameter 4, added A powder of a mixture of a hard fat and a dry ball mill is used as a powder for spraying the raw material.

7105-10188-PF 26 200944618 熔射原料粉末以SiUzer Metco公司製的rF4」(商品名) 熔射裝置進行熔射至石英玻璃基材上。粉末的供給使用 Sulzer Metco公司製的r 5MPE」(商品名),以以作為供 給氣體而以25 L/min進行供給,上述氮化鋁粉末、氧化釔 粉末與硬脂酸以24 g/分的供給量流動,並於熔射搶出口 進行2個位置的對向式供給。 熔射條件為:熔射距離5〇mm、電漿搶為虹:6〇 slm、 ❹ 0 5 10 13 15 SLM’熔射搶以4〇〇mm/秒的速度移 動,進行20道次的熔射。结杲如矣 _ ^筠果如表3所不。全部的化流 量會附著成膜,但是如為"LM的話膜的附著弱,如為15 SLM的話膜的表面產生突起。7105-10188-PF 26 200944618 The molten material powder was sprayed onto a quartz glass substrate using a rF4" (trade name) spray device manufactured by SiUzer Metco Co., Ltd. The powder was supplied by using r 5MPE (trade name) manufactured by Sulzer Metco Co., Ltd., and supplied as a supply gas at 25 L/min, and the above aluminum nitride powder, cerium oxide powder and stearic acid were 24 g/min. The supply amount flows, and the opposite direction supply of the two positions is performed at the melt blast exit. The spraying conditions are: the spray distance is 5〇mm, the plasma is grabbed as rainbow: 6〇slm, ❹ 0 5 10 13 15 SLM' spray is moved at a speed of 4〇〇mm/sec, and 20 passes are melted. Shoot. The results are as follows: _ ^ The results are as shown in Table 3. The entire flow rate is attached to the film, but if it is "LM, the adhesion of the film is weak, and if it is 15 SLM, the surface of the film is raised.

表3table 3

實施例9Example 9

「牙、J 80 mm 以 4所示p U 〇LM、熔射距離為 外’以與實施例8相同的條件進行熔射。結身 熔射距離80難的話附著轡 ..l 可燹弱,但其他良好"The teeth, J 80 mm, p U 〇 LM shown in 4, and the spray distance are outside" are sprayed under the same conditions as in the case of Example 8. If the penetration distance of the body is difficult to 80, the adhesion may be weak. But other good

7105-10188-PF 27 200944618 比較例1 對於平均粒徑15 的氮化鋁粉末(東洋鋁(股)製氮 化鋁粉末FLX(平均粒徑18」“m)),以與實施例i、2相 同的條件進行熔射,未能附著熔射膜。 比較例2 電漿清潔裝置的石英製的鐘罩以及環絕緣基台的表面 喷砂而使得表面粗糙度個別為7、6、3 V m。將此些構件 ❿ 與其他必要的構件以超純水超音波洗淨,於清潔烘箱乾燥 後’裝設於電漿清潔裝置的反應室。 實施例4與比較例2的構件的連續使用試驗 圖11所不的電漿清潔裝置,自天線功率高頻電源i丄6 供給高頻線圈117電力,又自偏壓功率高頻電源118經由 電谷器供給電力給設置矽晶圓113的電極,因而使反應室 中的Ar氣生成Ar離子114 ’而且’將實施例4與比較例2 的反應室的電漿清潔裝置連續使用於半導體製程,Αι_離子 _ 濺鍍所致的堆積物Π5開始堆積於鐘罩U1表面,比較例 2在3日後微粒增加,實施例4在2〇日後微粒增加,並取 出鐘罩、環絕緣機台等的構件進行交換。顯示出本發明的 氮化鋁熔射構件的微粒減少效果。 【圖式簡單說明】 圖1所示為氮化鋁熔射構件的模式圖的一實例的圖。 圖2所示為氮化鋁熔射構件的模式圖的一實例的圖。 圖3所示為氮化鋁熔射臈的χ線繞射圖的一實例的圖。7105-10188-PF 27 200944618 Comparative Example 1 Aluminum nitride powder (Ammonia aluminum powder FLX (average particle diameter: 18" "m)) having an average particle diameter of 15 and Example i, 2 The same conditions were used for the spraying, and the spray film was not attached. Comparative Example 2 The quartz bell jar of the plasma cleaning device and the surface of the ring insulating abutment were sandblasted so that the surface roughness was individually 7, 6, 3 V m . The components ❿ and other necessary components were ultrasonically washed with ultrapure water, and dried in a cleaning oven to be installed in the reaction chamber of the plasma cleaning apparatus. The continuous use test of the members of Example 4 and Comparative Example 2 The plasma cleaning device shown in FIG. 11 supplies power from the antenna power high-frequency power source i丄6 to the high-frequency coil 117, and the self-bias power high-frequency power source 118 supplies power to the electrodes provided on the wafer 113 via the electric grid. Thus, Ar gas in the reaction chamber was generated to generate Ar ions 114' and 'the plasma cleaning apparatus of the reaction chambers of Example 4 and Comparative Example 2 was continuously used in the semiconductor process, and the deposit Π5 due to sputtering_ion_sputtering was started. Stacked on the surface of the bell U1, Comparative Example 2 after 3 days When the particles were increased, the particles were increased after 2 days, and the members such as the bell jar and the ring insulating machine were taken out and exchanged, and the effect of reducing the particles of the aluminum nitride spray member of the present invention was exhibited. Fig. 1 is a view showing an example of a schematic view of an aluminum nitride spray member. Fig. 2 is a view showing an example of a pattern of an aluminum nitride spray member. Fig. 3 is a view showing an aluminum nitride spray. A diagram of an example of a sinusoidal diffraction pattern.

7105-10188-PF 28 200944618 圖4所示為氮化銘熔射構件的加熱器、靜電固持頭的 構造的一實例的圖。 圖5所示為氮化鋁熔射構件的放熱絕緣基板的構造的 一實例的圖。 圖6所示為電漿熔射裝置的一實例的圖。 圖7所示絕緣耐壓試驗的一實例的圖。 圖8所不為飛行中的氮化鋁粒子的溫度與熔射膜的附 ❿ 著效率’六方晶氮化鋁的峰強度比的圖。 圖9所示為所製作的氮化鋁熔射膜斷面的SEM圖像。 圖所示為所製作的氮化鋁熔射膜斷面的由ΕΡΜΑ所 得的A1、Ν、γ組成圖像。 圖11所示為電漿清潔裝置的概略的一實例的圖。 圖12所述為熔射原料粉末相對於電漿喷射由兩個位 置相對向供給的型態的一實例的圖。 ❹ 【主要元件符號說明】 11 :基材 12 :熔射膜 13 :氮化鋁粒子 21 :基材 22 :熔射膜 2 3 :氮化鋁粒子 24 : IIIA族及/或IIA族化合物 , 41 :金屬基材 7105-10188-PF 29 2009446187105-10188-PF 28 200944618 Fig. 4 is a view showing an example of the structure of a heater and an electrostatic holding head of a nitriding melt-casting member. Fig. 5 is a view showing an example of the structure of a heat releasing insulating substrate of an aluminum nitride spray member. Fig. 6 is a view showing an example of a plasma spray device. Fig. 7 is a view showing an example of an insulation withstand voltage test. Fig. 8 is a graph showing the peak intensity ratio of the hexagonal aluminum nitride in the temperature of the aluminum nitride particles in flight and the adhesion efficiency of the melted film. Figure 9 is a SEM image of a cross section of the produced aluminum nitride spray film. The figure shows the images of the A1, Ν, and γ obtained from the cross section of the produced aluminum nitride spray film. Fig. 11 is a view showing an example of a schematic of a plasma cleaning device. Fig. 12 is a view showing an example of a form in which the molten material powder is supplied oppositely from the two positions with respect to the plasma jet. ❹ [Main component symbol description] 11 : Substrate 12 : Spray film 13 : Aluminum nitride particles 21 : Substrate 22 : Spray film 2 3 : Aluminum nitride particles 24 : Group IIIA and / or IIA compounds, 41 :Metal substrate 7105-10188-PF 29 200944618

42 : 第1熔射膜 43 : 金屬電極膜或加熱層 44 : 第2熔射膜 51 : 金屬放熱基材 52 : 氮化鋁熔射膜 53 : 金屬鍍金或是熔射膜 54 : 焊材 55 : 功率元件 60 : 陰極 61 : 陽極 62 : 電漿氣體 63 : 熔射粉末(供給口) 64 : 集合器 65 : 熔射距離 66 : 基材 67 : 熔射模 68 : 電源 72 : 鋁熔射膜 73 : 石墨 74 : 電極 75 : 财電壓試驗機 111 :鐘罩 112 :環狀絕緣機台 113 .碎晶圓 3042 : First spray film 43 : Metal electrode film or heating layer 44 : Second spray film 51 : Metal heat release substrate 52 : Aluminum nitride spray film 53 : Metal gold plating or spray film 54 : Welding material 55 : Power Element 60 : Cathode 61 : Anode 62 : Plasma Gas 63 : Spray Powder (Supply Port) 64 : Aggregator 65 : Melting Distance 66 : Substrate 67 : Molding Die 68 : Power Supply 72 : Aluminum Spray Film 73 : Graphite 74 : Electrode 75 : Financial test machine 111 : Bell cover 112 : Annular insulation machine 113 . Broken wafer 30

7105-10188-PF 200944618 114 : Ar離子 115: Ar離子濺鍍所致的堆積物 11 6 :天線功率高頻電源 11 7 :高頻線圈 118 :偏壓功率高頻電源 121 :熔射原料粉末 122 :粉末供應機 123 :惰性氣體汽缸 124 :分叉為二分支 125 :電漿噴射 126 :熔射搶7105-10188-PF 200944618 114 : Ar ion 115: deposit due to Ar ion sputtering 11 6 : Antenna power high frequency power supply 11 7 : high frequency coil 118 : bias power high frequency power supply 121 : molten raw material powder 122 : Powder Supply Machine 123: Inert Gas Cylinder 124: Bifurcation to Two Branches 125: Plasma Jet 126: Spray Shot

3131

7105-10188-PF7105-10188-PF

Claims (1)

200944618 十、申請專利範面: 1. -種氮化链熔射構件’在基材上形成有熔射族,其 中前述溶射膜由平均直徑為i “以上心㈣下的略球 狀的氮化鋁粒子所構成。 2. —種氮化紹熔射構件,在基材上形成有溶射膜,其 中前述熔射膜由平均直徑41 ”以上1Q㈣以下的略球 狀的氮化銘粒子與ΙΠΑ族及/或ΠΑ族化合物所構成。 ❹ ❹ .如申#專利範圍第2項所述的氮化㉝溶射構件,其 中在前述氮化銘粒子的間隙中,存在有前述πΐΑ族及/或 IIA族化合物’且熔射臈的孔隙率為15%以下。 4.如申請專利範圍第2或3項所述的氮化_構 件’其中前料射膜中的前述ΠΙΑ族及/或ΠΑ族化合物 的含量為1 wt%以上30 wt%以下。 炫射播+請專利範圍第1至4項中任—項所述的氮化銘 熔射構件,其中前述氮化銘粒子的表面個別被氧化,並I 鄭接粒子結合。 … 申《月專利範圍第5項所述的氮化㉝熔射構件 中在前述熔射膜的x線繞射 、 咏梵射峰強度中,r虱化鋁(4〇〇)面 ^氧化銘(1〇4)面的峰強度的和對氮化銘⑽)面的峰 強度的比為0.05以上〇.2以下。 工騎膜^化^射構件’在基材上至少依序形成有第 射膜、金屬電極層或加熱層以及第2,熔射膜, 其特徵在於: 月i述第1熔射膜及/洗黎。 町勝及/或第2熔射膜是由平均直徑為1 7105-10188-PF 32 200944618 私 m 以上 1 〇 " m π μ 下的略球狀的氮化鋁粒子所構成。 1 J膜、種氮化鋁熔射構件,在基材上至少依序形成有第 、 > 、、金屬電極層或加熱層以及第2熔射膜, 其特徵在於: 前述第1熔射膜及/或第2熔射膜是由平均直徑為i 以上10以下的略球狀的氮化鋁粒子與族及/ 或IIA族化合物所構成。200944618 X. Patent application: 1. A kind of nitriding chain melting member 'forms a melting family on the substrate, wherein the above-mentioned solvent film is made of a slightly spherical nitridation with an average diameter of i"above the heart (four) 2. A composition of aluminum particles. 2. A nitrided spray member having a spray film formed on a substrate, wherein the spray film is formed by a slightly spherical nitrided particle having an average diameter of 41" or more and 1/4 or less. And / or steroids.氮化 ❹. The nitriding 33 solute member according to claim 2, wherein in the gap of the nitriding particles, the π ΐΑ and/or IIA compound It is 15% or less. 4. The nitriding member according to claim 2, wherein the content of the aforementioned lanthanum and/or steroid compound in the precursor film is 1 wt% or more and 30 wt% or less. The nitriding spray member according to any one of the items 1 to 4, wherein the surface of the nitriding particles is individually oxidized, and I is fused to the particles. ... in the nitriding 33 spray member described in item 5 of the monthly patent range, in the x-ray diffraction of the aforementioned spray film, the intensity of the 咏Van 射 peak, r 虱 aluminum (4 〇〇) surface ^ oxidation Ming The ratio of the peak intensity of the (1〇4) plane to the peak intensity of the nitride (10) plane is 0.05 or more and 〇.2 or less. The first film, the metal electrode layer or the heating layer, and the second, molten film are formed on the substrate at least sequentially, and the first spray film and/or Washing the Li. The Omachi and/or the second spray film consists of slightly spherical aluminum nitride particles with an average diameter of 1 7105-10188-PF 32 200944618 sec m above 1 〇 " m π μ. The 1 J film and the aluminum nitride spray member are formed with at least a >, a metal electrode layer or a heating layer, and a second melt film on the substrate, wherein the first melt film is And/or the second melt film is composed of a slightly spherical aluminum nitride particle having an average diameter of i or more and 10 or less and a group and/or a group IIA compound. 如申請專利範圍第8項所述的氮化銘熔射構件,其 中在則述氮化鋁粒子的間隙中’存在有前述η IA族及/或 ΠΑ族化合物,且熔射膜的孔隙率為15%以下。 如申請專利範圍第8或g項所述的氮化鋁熔射構 件其中則述熔射膜中的前述IIIA族及/或IIA族化合物 的含量為1 wt%以上30 wt%以下。 Π.如申請專利範圍第7至10項中任一項所述的氮化 鋁熔射構件,其中前述氮化鋁粒子的表面個別被氧化,並 與鄰接粒子結合。 12, 如申請專利範圍第n項所述的氮化鋁熔射構件, 其中在前述熔射膜的X線繞射峰強度中,τ氧化鋁(400) 面與α氧化鋁(104)面的峰強度的和對氮化鋁(1〇〇)面的 峰強度的比為0.05以上0.2以下。 13. 如申請專利範圍第1至12項中任一項所述的氮化 熔射構件’其中在暴露於電漿的部份形成有前述氮化鋁 熔射膜。 14.如申請專利範圍第2、8或9項所述的氮化鋁熔射 7105-10188-PF 33 200944618 構件,其中在暴露於電漿的部份形成有由前述氮化鋁與前 述IIU族及/或IIA族化合物所構成的熔射膜。 15. 如申请專利範圍第13或14項所述的氮化鋁熔射構 件,其中前述氮化鋁熔射構件為園蓋狀、圓柱狀、或是環 狀,該氮化鋁熔射膜的表面粗糙度“為i以上15 以下。 16. 如申請專利範圍第〗至15項中任一項所述的氮化 ❿鋁熔射構件,其中前述基材為熱傳導率100 W/mK以上的金 屬或是金屬-陶变複纟的放熱基板,前述氮化銘溶射膜的熱 傳導率為10 W/mK以上。 17·如申請專利範圍第i至16項中任一項所述的氮化 銘溶射構件,其中前述氮化銘溶射膜被封孔。 18.如申請專利範圍第i至17項中任一項所述的氮化 紹熔射構件’其中前述氮化銘溶射膜的絕緣财盧為〇15 ΜV/cm以上。 ❹ ,19.種氮化鋁熔射構件的製造方法,製造如申請專利 範圍第1或7項的氮化鋁熔射構件, 其特徵在於: 將平均粒徑為1 Am以上1〇 以下的氮化鋁粉末供 給至溶射裝置,並藉由常壓電紫溶射在基材上形成氮化銘 熔射膜,其中前述電漿熔射的條件為即將到達基材前的氮 化鋁粒子的平均溫度為2200t以上、2281TC以下,平均飛 行速度為400 m/s以上6〇〇 m/s以下。 , 2 0.種氮化銘炼射構件的製造方法,製造如申請專利 7105-10188-PF 34 200944618 範圍第2或8項的氮化鋁熔射構件, 其特徵在於: 將平均粒徑為i ”以上1〇 ”以下& ΠΙΑ族及/ 或ΠΑ族化合物粉末與平均粒獲為丄口以上1〇 “以下 的氮化㈣末供給至熔射裝置,並藉由常Μ電漿溶射在基 材上形錢化㈣射膜’其中前述電漿熔射的條件為即將 到達基材前的氮化㈣子的平均溫度為測=以上、· C以下平均飛行速度為400 m/s以上6〇〇 m/s以下。 21. -種氮化銘熔射構件的製造方法,製造如申請專利 耗圍第1或7項的氮化鋁熔射構件, 其特徵在於: 將添加有平均粒徑為1…上10…下的氮化銘 粉末與相對於該氮化㈣末的重量為G1〜5 w㈣潤滑劑 的混合粉末作為溶射粉末供給至溶射裳置,並藉由常壓電 漿熔射在基材上形成氮化鋁熔射膜。 22. -種氮化铭溶射構件的製造方法,製造如申請專利 範圍第2或8項的氮化鋁熔射構件, 其特徵在於: 將添加有平均粒徑為i “以上1〇㈣以下的ιπΑ 族及/或IIA族化合物粉末、平均粒徑為(“以上ι〇 ” 以下的氮化鋁粉末與相對於此些粉末的合計重量為〇1〜5 紂%的潤滑劑的混合粉末作為熔射粉末供給至炫射裝置,並 藉由常壓電漿熔射在基材上形成氮化鋁熔射骐。 23. -種氮化鋁熔射構件的製造方法,製造如申請專利 7105-1018S-PF 35 200944618 範圍第1或7項的氮化鋁熔射構件, 其特徵在於: 將平均粒徑為1 # τη以上 於熔射搶的電漿出口外侧以2 射且相對向的進行供給,並藉 成氮化銘溶射膜,其中前述電 40 mm以上70 mm以下。 1 〇 # m以下的氮化鋁粉末, 個以上的位置垂直於電漿噴 由常壓電漿熔射在基材上形 滎·熔射的條件為溶射距離為The nitriding injecting member according to claim 8, wherein the η IA group and/or the steroid compound are present in the gap of the aluminum nitride particles, and the porosity of the molten film is 15% or less. The aluminum nitride sprayed member according to claim 8 or wherein the content of the Group IIIA and/or IIA compound in the spray film is from 1 wt% to 30 wt%. The aluminum nitride spray member according to any one of claims 7 to 10, wherein the surface of the aluminum nitride particles is oxidized individually and bonded to adjacent particles. 12. The aluminum nitride spray member according to claim n, wherein in the X-ray diffraction peak intensity of the aforementioned spray film, the τ alumina (400) surface and the α alumina (104) surface The ratio of the peak intensity to the peak intensity of the aluminum nitride (1 Å) plane is 0.05 or more and 0.2 or less. The nitriding member as described in any one of claims 1 to 12, wherein the aluminum nitride spray film is formed on a portion exposed to the plasma. 14. The aluminum nitride spray 7105-10188-PF 33 200944618 member according to claim 2, 8 or 9 wherein the portion exposed to the plasma is formed of the aforementioned aluminum nitride and the aforementioned IIU group And / or a film of the IIA compound. 15. The aluminum nitride spray member according to claim 13 or 14, wherein the aluminum nitride spray member is a dome, a cylinder, or a ring, and the aluminum nitride spray film The surface roughness of the above-mentioned substrate is a metal having a thermal conductivity of 100 W/mK or more. The aluminum nitride spray member according to any one of the preceding claims, wherein the substrate is a metal having a thermal conductivity of 100 W/mK or more. Or the exothermic substrate of the metal-ceramic retanning, the thermal conductivity of the nitriding film is 10 W/mK or more. 17· The nitriding shot according to any one of the claims 1-5 to 16 The member, wherein the foregoing nitriding film is sealed. 18. The nitriding member according to any one of claims 1 to 17 wherein the insulating property of the nitriding film is 〇15 ΜV/cm or more. ❹ , 19. A method for producing an aluminum nitride spray member, which comprises the aluminum nitride spray member according to claim 1 or 7, which has an average particle diameter of 1 Am aluminum powder of less than 1 〇 is supplied to the spraying device, and is sprayed by ordinary piezoelectric violet Forming a nitrided fused film on the substrate, wherein the plasma is sprayed under the condition that the average temperature of the aluminum nitride particles immediately before reaching the substrate is 2200t or more and 2281TC or less, and the average flying speed is 400 m/s or more. 〇〇m/s or less., a manufacturing method of a nitriding smelting member, and an aluminum nitride absorbing member according to the second or eighth aspect of the application of the patent No. 7105-10188-PF 34 200944618, characterized in that : The average particle size is i ′′ or more and 1 〇” below & ΠΙΑ and/or steroid powder and average granules are obtained as 丄 以上 以上 〇 〇 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下 以下The 飞行 Μ Μ Μ 在 在 Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ 400 m / s or more and 6 〇〇 m / s or less. 21. A method for producing a nitriding melt-casting member, which comprises manufacturing an aluminum nitride spray member according to claim 1 or claim 7, wherein: an average particle diameter of 1 is applied to 10... The nitriding powder and the mixed powder of G1~5 w(iv) lubricant with respect to the end of the nitriding (tetra) are supplied as a spray powder to the spray skirt, and are nitrided on the substrate by normal piezoelectric slurry. Aluminum spray film. 22. A method for producing a nitrided immersion member, which comprises producing an aluminum nitride spray member according to claim 2 or claim 8, wherein: an average particle diameter of i "above 1" (four) or less is added. a mixed powder of a powder of an ιπΑ family and/or a group IIA compound and an average particle diameter of (approximately 1-5 Å or less) and a lubricant having a total weight of 〇1 to 5 % by weight relative to the powders The shot powder is supplied to the glare device, and is sprayed on the substrate by the normal piezoelectric slurry to form an aluminum nitride spray 骐. 23. A method for manufacturing an aluminum nitride spray member, which is manufactured as claimed in the patent 7105-1018S - PF 35 200944618 The aluminum nitride spray member of the first or seventh aspect, characterized in that the average particle diameter is 1 # τη or more and is supplied to the outside of the plasma outlet of the shot to be supplied in two directions and opposed to each other. And borrowed into a nitride film, wherein the above electricity is 40 mm or more and 70 mm or less. 1 氮化# m of aluminum nitride powder, more than one position perpendicular to the plasma spray from the normal piezoelectric slurry sprayed on the substrate The condition of the spray and the spray is that the spray distance is ❹ 24.—種氮化鋁熔射構件的製造方法,製造如申請專利 範圍第2或8項的氮化鋁熔射構件, 其特徵在於: 將平均粒徑A 1 Μ以上10 Am以下的ΠΙΑ族及/ 或ΙΙΑ族化合物粉末與平均粒徑為i 以上l〇 以下 的氮化鋁粉末的混合粉末,於熔射搶的電漿出口外側以2 個以上的位置垂直於電漿喷射且相對向的進行供給並藉 由常壓電聚溶射在基材上形成氮化鋁熔射膜,其中前述電 聚炼射的條件為溶射距離為mm以上細1以下。 7105-1O188-PF 36❹ 24. A method for producing an aluminum nitride spray member, which is characterized in that the aluminum nitride spray member according to claim 2 or 8 is characterized in that: ΠΙΑ having an average particle diameter A 1 Μ or more and 10 Am or less a mixed powder of a family and/or steroid powder and an aluminum nitride powder having an average particle diameter of i or more and less than or equal to 10 Å, and is sprayed perpendicularly to the plasma at a position of two or more outside the sprayed plasma outlet. The aluminum nitride spray film is formed on the substrate by normal piezoelectric poly-solubilization, wherein the electropolymerization conditions are such that the spray distance is less than or equal to 1 mm. 7105-1O188-PF 36
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