TW202240647A - Plasma processing device part processing method, part and processing device - Google Patents

Abstract

The invention discloses a processing method for improving an etching rate and a plasma processing device. The processing method comprises the following steps: placing a part in a vacuum reaction chamber; placing a silicon wafer subjected to thermal oxidation treatment in the vacuum reaction cavity; generating a high-compactness silicon film: introducing organic etching gas into the vacuum reaction cavity; a radio frequency signal is applied to the vacuum reaction cavity, the radio frequency signal excites the organic etching gas into plasma, the plasma bombards the silicon wafer, and a high-compactness silicon film is generated to cover the surface of the part. According to the invention, very low-cost treatment gas and a coating process are adopted, so that uniform coating of parts possibly in contact with plasmas in etching cavities such as a gas spray head is realized, and direct contact between a Y2O3 coating or an Al2O3/SiC coating of the parts and the plasmas is isolated, so that microparticle pollution is reduced to the greatest extent, and the service life of the parts is prolonged. And the reaction rate of the organic etching reaction is stabilized, the production uniformity is improved, and the production cost is reduced.

Description

Processing method, component, gas shower head and plasma processing device for improving plasma etching rate

The invention relates to the technical field of plasma etching, in particular to a processing method for improving plasma etching rate, parts, gas shower head and plasma processing device.

Microparticle contamination in etch chambers is an important issue in wafer production. Severe cavity contamination can cause short circuits and block etch of integrated circuits. Therefore, as the feature size continues to shrink, the control of the number and size of micro-particles (particles, referred to as PA) in the etching cavity is becoming more and more stringent. For example, in the era of 0.11~0.13μm, the etching chamber can detect microparticles above 0.16μm to ensure the safety of etched wafers. But when the 10nm technology node is reached, the number of microparticles smaller than 0.045μm must be monitored.

There are two main sources of microparticles: one is the carbon-containing by-products produced during the etching process. For the etching of organic mask layer materials, the main gases are NH ₃ , N ₂ /H ₂ and so on. During the etch process, part of the carbonitride polymer is deposited on the chamber walls, including the top electrode and the area around the wafer perimeter. On the other hand, since there are highly active free radicals and high-energy ions in the plasma, the material of the cavity, especially the gas showerhead (SH for short) of the upper electrode will be modified. This modification will cause the corrosion of the Y ₂ O ₃ material of the upper electrode, thereby forming the source of PA. At the same time, this modification also reduces the life of the gas shower head and increases the COC (cost of consumable, consumable cost).

In order to reduce particle pollution, the surface of the components in the reaction chamber can be coated. Although the coating isolates the direct contact between the plasma and the protective layer, its surface morphology has an unstable effect on the etching rate due to the adsorption of reactive gas particles. .

In order to solve the above-mentioned technical problems, the present invention provides a kind of processing method that improves plasma etch rate, and this method comprises the following steps: Place the parts in a vacuum reaction chamber; placing a thermally oxidized silicon wafer in the vacuum reaction chamber; Introducing an organic etching gas into the vacuum reaction chamber; and Applying a radio frequency signal to the vacuum reaction chamber, the radio frequency signal excites the organic etching gas into plasma, and the particles generated by the bombardment of the silicon wafer by the plasma form a silicon film on the surface of the component.

Preferably, the thermal oxidation treatment includes the following steps: placing the silicon wafer in a furnace tube with a temperature greater than 800°C, and feeding H ₂ and O ₂ , the flow ratio of H ₂ and O ₂ is 1 :4-4:1.

Preferably, the flow ratio of H ₂ and O ₂ is 10:7-13:10.

Preferably, the organic etching gas includes H ₂ , SiH ₄ and oxygen-containing gas.

Preferably, the oxygen-containing gas includes one or more of O ₂ , CO and CO ₂ .

Preferably, the temperature of the plasma is less than 130°C.

Preferably, the process conditions of the plasma are: the pressure is less than 150mT; the radio frequency power is greater than 200W; the radio frequency range is 2-60MHZ.

Preferably, the radio frequency signal adopts a continuous mode or a pulse mode.

Preferably, the thickness of the silicon thin film is less than 30nm.

Preferably, the components refer to the components in the vacuum reaction chamber that are in contact with the plasma, including the inner wall of the reaction chamber, the grounding ring, the moving ring, the electrostatic chuck element, the covering ring, the focusing ring, the insulating ring, the plasma At least one of a restraint and a liner.

Preferably, the surface of the component is provided with a protective layer for anti-plasma corrosion.

Preferably, the protective layer is Y ₂ O ₃ coating or Al ₂ O ₃ /SiC coating.

Preferably, a layer of silicon coating is provided on the protection layer to prevent pollution.

Further, the present invention also provides a component used in a plasma processing environment, including a component body, the surface of the body is provided with a protective layer for anti _- plasma corrosion, and the protective layer is a _Y2O3 coating Or an Al ₂ O ₃ /SiC coating, and a silicon thin film wrapped on the outer surface of the protective layer; the silicon thin film is formed by any one of the above-mentioned treatment methods.

Preferably, the components refer to the components in the vacuum reaction chamber that are in contact with the plasma, including the inner wall of the reaction chamber, the grounding ring, the moving ring, the electrostatic chuck element, the covering ring, the focusing ring, the insulating ring, the plasma At least one of a restraint and a liner.

Preferably, the gas shower head includes: a gas shower head body; a protective layer wrapped on the surface of the body for anti-plasma corrosion, the protective layer is Y ₂ O ₃ coating or Al ₂ O ₃ /SiC coating, and a silicon thin film wrapped on the outer surface of the protective layer; the silicon thin film is formed by any one of the treatment methods described above.

Further, the present invention also provides a plasma processing device, which includes: a vacuum reaction chamber, and parts in contact with the plasma located in the vacuum reaction chamber, the parts have the components described above feature.

The advantage of the present invention is that: the present invention provides a treatment method for improving the plasma etching rate. Through special process steps, a layer of high-density silicon film is formed on the surface of parts such as shower heads containing a protective layer, which not only isolates the plasma The direct contact between the body and the parts in the vacuum chamber minimizes the pollution of particles, improves the service life of the parts, and avoids the adsorption of atoms contained in the reaction gas on the surface of the shower head and other parts to achieve a uniform and stable etching rate. , thereby improving production efficiency and reducing production costs.

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art of the present invention without making progressive changes shall fall within the protection scope of the present invention.

In order to prevent the plasma from corroding the parts in the vacuum reaction chamber and producing pollutants, one solution is to pass a mixed gas of ammonia (NH ₃ ) and argon (Ar) into the vacuum reaction chamber to age the surface of the parts , to form a layer of silicon coating, but this coating will affect the stability of the etching rate due to the loose structure of the surface. As shown in Figure 1, in organic etching, for the hydrogen (H) process, each The substrate continuously records the etching rate point during the reaction time. It can be seen from the figure that for a single substrate, the etching rate fluctuates from high to low, and the two sets of experimental data from (1) and (2) show that As the number of etched substrates increases, the change trend of etching rate is constantly decreasing. For organic etching, for the carbon (C) process, as shown in Figure 2, through four sets of experimental data, it shows that with the increase of the number of etched substrates, the etching rate gradually increases from a lower value, and the final area is stable The phenomenon. Regardless of which of the above organic etching processes, the uniformity of substrate etching will be destroyed, and the process parameters will fluctuate in mass production.

The specific reason can be explained in conjunction with Figure 3. Taking the component as a shower head as an example, for the H-containing process, because the surface density of the silicon (Si) coating is low, the surface is easy to absorb enough H, and the subsequent Organic etching produces a higher etching rate, and with the consumption of H, the etching rate gradually decreases and tends to be stable. For the C-containing process, it is also easy to absorb enough C due to the low density of the surface of the shower head, which in turn has a sluggish effect on the subsequent organic etching. With the consumption of C, the etching rate gradually increases and tends to more stable.

Embodiment one

As shown in Figure 4, the processing method for improving the plasma etching rate of the present invention includes the following steps: S1, the silicon wafer is subjected to thermal oxidation treatment to form a denser silicon dioxide layer on its surface, and then The substrate is placed in a plasma processing device; S2, a gas shower head containing a protective layer is placed in the plasma processing device, and the protective layer can be yttrium oxide (Y ₂ O ₃ ) coating or aluminum oxide/ Silicon carbide (Al ₂ O ₃ /SiC) coating to improve the corrosion resistance of the gas shower head; S3, introducing organic etching gas as the reaction gas, applying a radio frequency signal to the vacuum reaction chamber to excite the reaction gas For plasma, the silicon dioxide with higher density is bombarded to cover the surface of the gas shower head; S4, the organic etching process is carried out by using the plasma processing device which has completed the above steps.

After being covered with a high-density silicon film, the gas shower head can avoid the adsorption of H or C, and can isolate the direct corrosion of the protective layer by the plasma, which reduces the formation of pollutants.

In some embodiments, the processing method is carried out during the warm-up process, especially after the plasma processing device has been shut down for a long time and high bias cleaning is performed, the above steps can be run, and contaminants can also be detected after multiple reactions When the reaction rate increases or the reaction rate fluctuates greatly, repeat the above steps.

In some other embodiments, the thermal oxidation treatment of the silicon wafer is carried out in the furnace tube process, the silicon wafer is placed in a temperature greater than 800 ° C, and hydrogen (H ₂ ) and oxygen (O ₂ ) are passed through, That is, wet oxidation, the flow ratio of _H2 and _O2 is between 1:4-4:1, especially the flow ratio of 10:7-13:10 can be selected, _H2 and _O2 produce water under high temperature conditions Vapor, reacts with the surface of the silicon wafer to produce denser hot silicon dioxide, H ₂ gas can increase the stress between the silicon dioxide, and high stress is accompanied by high density, but too high stress will also lead to The nature of the membrane is easy to break and peel off, which affects the content of pollutants. When using plasma to bombard silicon wafers, it is preferable to make the temperature of the plasma less than 130°C, and control the thickness of the high-density silicon film formed on the surface of the shower head to be less than 30nm, and a smaller thickness can reduce the high-density silicon film The stress on the surface molecules is not easy to fall off, that is, it will not become a source of particle pollution.

Embodiment two

As shown in Figure 5, the difference between the treatment method for improving the plasma etching rate of the present invention and the first embodiment is that, before putting in the thermally oxidized silicon wafer series steps, first put in the unoxidized general silicon wafer , and then a mixed gas of NH ₃ and Ar is introduced to age the protective layer on the surface of the shower head, and a radio frequency signal is applied to the vacuum reaction chamber to excite the mixed gas into plasma and react with the silicon wafer. The specific reaction mechanism As follows: NH ₃ +eàNH+H*; Ar+eàAr++2e; xH*+SiàSiHx.

SiHx will be re-deposited on the surface of the gas shower head and other components to become a Si deposition layer, and the physical bombardment effect of Ar+ will accelerate the deposition speed of the Si deposition layer, accelerate passivation, and form a silicon coating on the surface of the shower head. Basically, the thermally oxidized silicon wafer is placed, and the organic etching gas plasma is excited to cover a layer of high-density silicon film on the silicon coating of the shower head. The silicon coating is similar in structure to the high-density silicon thin film, they are more stable in combination and not easy to fall off, and the two work together to achieve a better effect of reducing pollutants, and this embodiment does not need to modify the existing gas shower head. The covered silicon coating is removed and then covered with a new high-density silicon film, which has strong applicability.

In this embodiment, the organic etching gas includes H ₂ and silane (SiH ₄ ), and also includes one or more of oxygen (O ₂ ), carbon monoxide (CO) and carbon dioxide (CO ₂ ).

Comparative example one

As shown in Figure 6, for the H-containing process in the organic etching reaction, the broken line (1) is the monitoring of the amount of pollutants produced by the shower head using the silicon coating treatment method during the etching process, and the broken lines (2) and (3) are used The amount of pollutants produced in the etching process under different pressures is monitored after the treatment method of the present invention. It can be seen that as the number of processed substrates (pcs) increases, although the silicon coating treatment method also reduces the generation of pollutants, the average value of the two sets of data still reaches 4.7 (ea). And after adopting the treatment method of the present invention, the quantity record of the pollutent is measured as broken line (2) respectively at the pressure of 270 mTorr (mT), draws the average pollutent quantity to be 2.8ea, and the pollution is measured under the pressure of 60mT The amount of matter is recorded as broken line (3), and the average amount of pollutants is 2.4ea. It can be seen that the treatment method of the present invention can better prevent the technical effect of pollutants.

As shown in Figure 7, for the H-containing process in the organic etching reaction, the broken line (2) is the monitoring of the etching rate of the shower head using the silicon coating treatment method, and the broken lines (1) and (3) are the processing method using the present invention Afterwards, the etch rate was monitored under different pressures. It can be seen that although the reaction rate of the silicon coating treatment method is relatively stable, the average rate of 675.1 Angstroms/min (Å/min) is higher than the rate of 668 Å/min of the present invention's treatment method at the same pressure of 60 mT. ), the processing method of the present invention can also maintain a lower average etching rate when the pressure is 270mT. In the actual reaction, the etching rate is expected to be stable and not too fast, so in conjunction with the silicon coating treatment method in Figure 1, the etching rate increases with the increase of the substrate, and the etching rate is first fast and then slow, the processing method of the present invention is even better. It can meet the needs of actual etching.

Comparative example two

For the C-containing process in the organic etching reaction, FIG. 8 shows a line graph of the amount of pollutants produced by the gas shower head treated by the method of the present invention. There are three sets of experimental data, and each set measures the number of pollutants in increasing order of the number of processed substrates. It can be seen that after a maximum of 425 etching reactions, the number of pollutants can also be kept within 6. However, the pollutants generated by the silicon coating treatment method can reach hundreds. It can be seen that, in the C-containing organic etching process, the treatment method of the present invention is also better than the silicon coating method in reducing pollutants.

As shown in Figure 9, for the C-containing process in the organic etching reaction, the bar graph (1) is the monitoring of the etching rate of the shower head after using the silicon coating treatment method, and the bar graphs (2), (3) and ( 4) It is the monitoring of the etching rate under different numbers of substrates after using the processing method of the present invention. The histogram (1) shows the change of etching rate under the maximum number of 10 pieces. According to the increase in the number of substrates, three groups were selected to record the etching rate. It can be seen that the reaction rate is gradually increasing, while the histogram ( 2), (3) and (4) are under the condition that the maximum number of substrates is 10, 125 and 340 respectively, three groups are selected to record the etching rate in turn. It can be seen that the reaction rate has always maintained a relatively stable value. The broken line can also show that the processing method of the present invention has a more stable rate than the silicon coating processing method.

Embodiment three

Capacitively coupled plasma (CCP) etching equipment is a kind of equipment that generates plasma in the reaction chamber through capacitive coupling by the radio frequency power applied to the plate and is used for etching. As shown in FIG. 10 , it is a schematic structural diagram of a capacitively coupled plasma (CCP) etching device, which includes a vacuum reaction chamber 100 , a high-frequency radio frequency power supply, and a bias radio frequency power supply.

The vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber side wall 10 made of metal material, a top cover 9 , an upper electrode component and a lower electrode component.

The upper electrode element includes: The gas shower head 7 is used to introduce the reaction gas and simultaneously serve as the upper electrode of the reaction chamber; The installation substrate 8 is located above the gas shower head 7, and the gas shower head 7 is fixedly connected to the top cover 9 of the reaction chamber through the installation substrate 8; The upper grounding ring 6 is arranged around the gas shower head 7. When the RF power is applied to the lower electrode, a radio frequency loop is formed between the RF power supply-lower electrode-plasma-upper electrode-upper grounding ring.

The lower electrode element includes: The base 1 is used to carry the electrostatic chuck (ESC) 2. It is equipped with a temperature control device to realize the temperature control of the upper substrate w. Because it is a conductive material, it also serves as the lower electrode, and the upper electrode and the lower electrode are formed Plasma treatment area; The electrostatic chuck 2 is used to carry the substrate w, and a DC electrode is arranged inside the electrostatic chuck 2, through which DC adsorption is generated between the back of the substrate w and the bearing surface of the electrostatic chuck 2 to realize the attachment of the substrate w fixed; A focus ring 3, which is arranged around the substrate w, is used to adjust the processing effect of the edge area of the substrate w; An isolation ring 4, which is arranged around the base 1, is used to isolate the base 1 from the lower grounding ring 11; A plasma confinement ring 5, which is located between the base and the side wall 10 of the reaction chamber, is used to confine the plasma in the reaction area while allowing the gas to pass through; The lower grounding ring 11 is located below the plasma confinement ring 5 and serves to provide an electric field shield to avoid plasma leakage.

The gas shower head 7 is arranged opposite to the base 2, and the gas shower head 7 is connected to a gas supply device for delivering reaction gas to the vacuum reaction chamber 100, and simultaneously serves as an upper electrode of the vacuum reaction chamber; The base 2 is used to support the substrate w to be processed, and also serves as the lower electrode of the vacuum reaction chamber 100 , a reaction area is formed between the upper electrode and the lower electrode. At least one high-frequency radio frequency power supply is applied to one of the upper electrode or the lower electrode, and a radio frequency electric field is generated between the upper electrode and the lower electrode to dissociate the reaction gas into plasma, and the plasma acts on the The substrate w implements the etching process on the substrate w.

A focus ring 3 and an edge ring are arranged around the base 1, and the focus ring 3 and the edge ring are used to adjust the electric field or temperature distribution around the substrate w to improve the processing uniformity of the substrate w. A plasma confinement ring 5 is arranged around the edge ring, and an exhaust channel is arranged on the plasma confinement ring 5. By reasonably setting the ratio of depth to width of the exhaust channel, the plasma is confined to the upper and lower sides while discharging the reaction gas. The reaction area between the electrodes prevents the plasma from leaking into the non-reaction area, causing damage to the components in the non-reaction area.

The high-frequency radio frequency power supply is applied to the upper electrode or the lower electrode through a high-frequency radio frequency matching network to control the plasma concentration in the reaction chamber. The bias RF power is usually applied to the susceptor 1 to control the direction of the plasma.

Before the etching process, put the silicon wafer oxidized by the furnace tube process in the vacuum reaction chamber 100, and then pass the organic etching gas including H ₂ , SiH ₄ and one or more of O ₂ , CO and CO ₂ , and then apply a high-frequency radio frequency signal, under the excitation of the radio frequency signal, the organic gas is excited into plasma, which bombards the oxidized silicon wafer, covering the surface of the component with highly dense silicon dioxide molecules, forming Highly dense silicon thin film.

The above-mentioned capacitively coupled plasma (CCP) etching equipment adopts the processing method of the present invention to uniformly form a layer of high-density silicon film on the surface of the parts that may be exposed to plasma in the etching chamber, and isolate the Y ₂ O ₃ of the parts. The direct contact between the coating or Al ₂ O ₃ /SiC coating protective layer and the plasma reduces the possibility of micro-particle contamination in the etching process, and at the same time avoids the adsorption of H or C in the organic etching gas on the surface of the component and affects the etching process. The destabilizing effect of the rate.

Example 4

Inductively coupled plasma reaction device (ICP) etching equipment is a kind of equipment that transmits the energy of radio frequency power supply into the reaction chamber in the form of magnetic field coupling through the induction coil, so as to generate plasma and use it for etching. As shown in FIG. 11 , it is a schematic structural diagram of an inductively coupled plasma reaction device (ICP). The structure of the lower electrode element of the ICP and the CCP is similar.

The inductively coupled plasma reaction device includes a vacuum reaction chamber 100, the vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber side wall 105 made of metal material, an insulating window 130 is arranged above the reaction chamber side wall 105, and an insulating window 130 is arranged above the insulating window 130. The inductive coupling coil 140 is connected to the radio frequency power source 145 .

A gas injection port 150 is provided on the side wall of the reaction chamber 105 close to the insulating window 130 , and in some equipment, a gas injection port is also provided in the central area of the insulating window 130 , and the gas injection port 150 is connected to the gas supply device 101 . The reaction gas in the gas supply device 101 enters the vacuum reaction chamber 100 through the gas injection port 150, and the radio frequency power of the radio frequency power source 145 drives the inductively coupled coil 140 to generate a strong high frequency alternating magnetic field, so that the low pressure reaction gas is ionized to generate plasma Body 160. A base 110 is provided downstream of the vacuum reaction chamber 100 , and an electrostatic chuck 115 is placed on the base 110 for supporting and fixing the substrate 120 . Plasma 160 contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The active particles can react with the surface of the substrate 120 to be processed in various physical and chemical reactions, so that the shape of the surface of the substrate 120 The appearance changes, that is, the etching process is completed. An exhaust pump 125 is also provided below the vacuum reaction chamber 100 to discharge the reaction by-products into the vacuum reaction chamber 100 .

Before the etching process, put the silicon wafer oxidized by the furnace tube process into the vacuum reaction chamber, and then pass the organic etching gas including H ₂ , SiH ₄ and one or more of O ₂ , CO and CO ₂ , Then apply a high-frequency radio frequency signal, under the excitation of the radio frequency signal, the organic gas is excited into plasma, which bombards the thermally oxidized silicon wafer, covering the surface of the component with highly dense silicon dioxide molecules, forming Highly dense silicon thin film.

The above-mentioned inductively coupled plasma (CCP) etching equipment adopts the processing method of the present invention to uniformly form a layer of high-density silicon film on the surface of the parts that may be exposed to plasma in the etching chamber, and isolate the Y ₂ O ₃ of the parts. The direct contact between the coating or Al ₂ O ₃ /SiC coating protective layer and the plasma reduces the possibility of micro-particle contamination in the etching process, and at the same time avoids the adsorption of H or C in the organic etching gas on the surface of the component and affects the etching process. The destabilizing effect of the rate.

The components for improving the plasma etching rate disclosed in the present invention are not limited to be applied to the plasma processing apparatuses of the above two embodiments, and may also be applicable to other plasma processing apparatuses, and will not be repeated here.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those having ordinary skill in the art to which the present invention pertains after reading the above disclosure. Therefore, the protection scope of the present invention should be limited by the scope of the appended patent application.

1,110: base 10: side wall 100: vacuum reaction chamber 101: Gas supply device 105: side wall of reaction chamber 11: Lower grounding ring 115: electrostatic chuck 120,w: Substrate 125:Exhaust pump 130: insulation window 140: Inductive coupling coil 145: RF power source 150: gas injection port 160:Plasma 2: Electrostatic chuck 3: Focus ring 4: isolation ring 5: Plasma confinement ring 6: Upper grounding ring 7: Gas sprinkler head 8: Install the substrate 9: Top cover S1～S4: steps

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art to which the present invention pertains, other drawings can also be obtained based on these drawings without making progressive changes. Fig. 1 is a schematic diagram of the treatment method of the prior art to the hydrogen-containing process rate; Fig. 2 is a schematic diagram of the processing method of the prior art to the carbon-containing process rate; Fig. 3 is the schematic diagram of the principle of the rate instability of the processing method in the prior art; Fig. 4 is the new processing method of a kind of parts that embodiment 1 provides; Fig. 5 is the new processing method of a kind of parts that embodiment 2 provides; Fig. 6 is a comparison chart of the pollutants of the hydrogen-containing process between the new treatment method and the treatment method of the prior art; Fig. 7 is a comparison chart of the rate of the hydrogen-containing process between the new treatment method and the treatment method of the prior art; Figure 8 is a line chart of pollutants from carbon-containing processes by the new treatment method; Fig. 9 is a rate comparison chart of the new processing method and the processing method of the prior art to the carbon-containing process; Figure 10 is a schematic structural view of a capacitively coupled plasma etching device processed by the processing method of the present invention; and FIG. 11 is a schematic structural view of an inductively coupled plasma etching device processed by the processing method of the present invention.

S1~S4: steps

Claims (17)

A treatment method for improving plasma etching rate, wherein the method comprises the steps of: placing a part in a vacuum reaction chamber; placing a thermally oxidized silicon wafer in the vacuum reaction chamber; Introducing an organic etching gas into the vacuum reaction chamber; A radio frequency signal is applied to the vacuum reaction chamber, the radio frequency signal excites the organic etching gas into plasma, and the particles generated by the bombardment of the silicon wafer by the plasma form a silicon film on the surface of the component. The processing method for improving the plasma etching rate as described in Claim 1, wherein the thermal oxidation treatment includes the following steps: placing the silicon wafer in a furnace tube with a temperature greater than 800°C, and feeding H ₂ and O ₂ , the flow ratio of H ₂ and O ₂ is 1:4-4:1. The processing method for improving the plasma etching rate according to claim 2, wherein the flow ratio of H ₂ and O ₂ is 10:7-13:10. The processing method for improving plasma etching rate as claimed in claim 1, wherein the organic etching gas includes H ₂ , SiH ₄ and oxygen-containing gas. The processing method for improving the plasma etching rate according to claim 4, wherein the oxygen-containing gas includes one or more of O ₂ , CO and CO ₂ . The processing method for improving plasma etching rate as claimed in claim 5, wherein the temperature of the plasma is less than 130°C. The processing method for improving plasma etching rate as described in Claim 1, wherein the plasma processing conditions are: pressure less than 150mT; radio frequency power greater than 200W; radio frequency range of 2-60MHZ. The processing method for improving plasma etching rate according to claim 7, wherein the radio frequency signal adopts a continuous mode or a pulse mode. The processing method for improving plasma etching rate according to claim 1, wherein the thickness of the silicon thin film is less than 30 nm. The processing method for improving the plasma etching rate as described in Claim 1, wherein the component refers to the component in the vacuum reaction chamber that is in contact with the plasma, including the inner wall of the reaction chamber, the grounding ring, the moving ring, and the electrostatic chuck element , at least one of a cover ring, a focus ring, an insulating ring, a plasma confinement device, and a liner. The processing method for improving the plasma etching rate as claimed in claim 1, wherein, the surface of the part is provided with a protective layer for anti-plasma corrosion. The treatment method for improving plasma etching rate as claimed in claim 11, wherein the protective layer is a Y ₂ O ₃ coating or an Al ₂ O ₃ /SiC coating. The processing method for improving the plasma etching rate as claimed in claim 11, wherein a layer of silicon coating is provided on the protection layer to prevent contamination. A component used in a plasma processing environment, comprising a component body, wherein the surface of the component body is provided with a protective layer for anti _- plasma corrosion, and the protective layer is _Y2O3 coating or _Al2 O ₃ /SiC coating, and a silicon film wrapped on the outer surface of the protective layer; the silicon film is formed by the treatment method for improving the plasma etching rate described in any one of claims 1-13. The component as described in claim item 14, wherein the component refers to the component in the vacuum reaction chamber that is in contact with the plasma, including the inner wall of the reaction chamber, the grounding ring, the moving ring, the electrostatic chuck element, the cover ring, the focus ring, At least one of an insulating ring, a plasma confinement device, and a liner. A gas shower head for a plasma processing device, wherein the gas shower head includes: a gas shower head body; a protective layer wrapped on the surface of the gas shower head body for anti-plasma corrosion , the protective layer is Y ₂ O ₃ coating or Al ₂ O ₃ /SiC coating, and a silicon thin film wrapped on the outer surface of the protective layer; the silicon thin film adopts the Processes for improving plasma etch rates are formed. A plasma processing device, wherein, the plasma processing device includes: a vacuum reaction chamber, and a component located in the vacuum reaction chamber and in contact with plasma, the component has the characteristics as described in claim 14.

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