TWI830076B - Processing method, components, gas shower head and plasma processing device for improving plasma etching rate - Google Patents

Abstract

The invention discloses a processing method, components, gas shower heads and plasma processing devices for improving etching rate. The processing method includes: placing the components in a vacuum reaction chamber; placing a thermally oxidized silicon wafer. In the vacuum reaction chamber, a highly dense silicon film is generated: an organic etching gas is introduced into the vacuum reaction chamber; a radio frequency signal is applied to the vacuum reaction chamber, and the radio frequency signal excites the organic etching gas into plasma, and the plasma Bombard the silicon wafer to generate a highly dense silicon film covering the surface of the component. The present invention adopts a very low-cost processing gas and coating process to achieve uniform coating of parts that may be exposed to plasma in etching chambers such as gas shower heads, and isolates the Y ₂ O ₃ coating or Al ₂ O of the parts. ₃ /SiC coating is in direct contact with plasma, thus minimizing micro-particle contamination, stabilizing the reaction rate of organic etching reactions, improving production uniformity, and reducing production costs.

Description

Processing method, components, gas shower head and plasma processing device for improving plasma etching rate

The present invention relates to the technical field of plasma etching, and in particular to a processing method, components, gas shower head and plasma processing device for improving plasma etching rate.

Microparticle contamination in the etching chamber is an important issue in wafer production. Severe cavity contamination can cause short circuits and block etch of integrated circuits. Therefore, as feature sizes continue to shrink, the number and size of particles (PA for short) in the etching cavity are increasingly controlled. For example, in the 0.11~0.13μm era, the etching chamber can detect microparticles above 0.16μm to ensure the safety of etched wafers. But when reaching the 10nm technology node, the number of microparticles smaller than 0.045μm must be monitored.

There are two main sources of microparticles: on the one hand, they are carbon-containing by-products produced during the etching process. For the etching of organic mask layer materials, the main gases are NH ₃ , N ₂ /H ₂ , etc. During the etching process, part of the carbonitride polymer will be deposited on the cavity wall, including the upper electrode and the area around the wafer. On the other hand, since there are highly active free radicals and high-energy ions in the plasma, the cavity materials, especially the upper electrode gas showerhead (SH), will be modified. This modification will cause corrosion of the Y ₂ O ₃ material of the upper electrode, thus forming the source of PA. At the same time, this modification also reduces the life of the gas sprinkler head and increases the COC (cost of consumable, consumable cost).

In order to reduce particle contamination, a film can be coated on the surface of the components in the reaction chamber. Although the coating isolates the direct contact between the plasma and the protective layer, its surface morphology has an unstable impact on the etching rate due to the adsorption of reaction gas particles. .

In order to solve the above technical problems, the present invention provides a processing method for improving plasma etching rate, which method includes the following steps: Place the parts in a vacuum reaction chamber; Place a thermally oxidized silicon wafer into the vacuum reaction chamber; Injecting organic etching gas into the vacuum reaction chamber; and A radio frequency signal is applied to the vacuum reaction chamber, and the radio frequency signal excites the organic etching gas into plasma. The particles generated by the plasma bombardment of the silicon wafer form a silicon film on the surface of the component.

Preferably, the thermal oxidation treatment includes the following steps: Place the silicon wafer in a furnace tube with a temperature greater than 800°C, pass in H ₂ and O ₂ , and the flow ratio of the H ₂ and O ₂ is 1 :4-4:1.

Preferably, the flow ratio of H ₂ and O ₂ is 10:7-13:10.

Preferably, the organic etching gas includes H ₂ , SiH ₄ and oxygen-containing gas.

Preferably, the oxygen-containing gas includes one or more of O ₂ , CO and CO ₂ .

Preferably, the temperature of the plasma is less than 130°C.

Preferably, the plasma process conditions are: pressure less than 150mT; radio frequency power greater than 200W; radio frequency range 2-60MHZ.

Preferably, the radio frequency signal adopts continuous mode or pulse mode.

Preferably, the thickness of the silicon film is less than 30 nm.

Preferably, the parts refer to the parts in the vacuum reaction chamber that are in contact with the plasma, including the inner wall of the reaction chamber, the grounding ring, the moving ring, the electrostatic chuck element, the covering ring, the focusing ring, the insulating ring, the plasma At least one of a restraint and a liner.

Preferably, the surface of the component is provided with a protective layer to prevent plasma corrosion.

Preferably, the protective layer is Y ₂ O ₃ coating or Al ₂ O ₃ /SiC coating.

Preferably, the protective layer is provided with a silicon plating layer to prevent the generation of contaminants.

Furthermore, the present invention also provides a component for use in a plasma processing environment, including a component body, the surface of which is provided with a protective layer for preventing plasma corrosion, and the protective layer is a Y ₂ O ₃ coating. Or Al ₂ O ₃ /SiC coating, and a silicon thin film wrapped on the outer surface of the protective layer; the silicon thin film is formed by any of the above processing methods.

Preferably, the parts refer to the parts in the vacuum reaction chamber that are in contact with the plasma, including the inner wall of the reaction chamber, the grounding ring, the moving ring, the electrostatic chuck element, the covering ring, the focusing ring, the insulating ring, the plasma At least one of a restraint and a liner.

Preferably, the gas shower head includes: a gas shower head body; a protective layer wrapped on the surface of the body to prevent plasma corrosion. The protective layer is a Y ₂ O ₃ coating or Al ₂ O ₃ /SiC. coating, and a silicon thin film wrapped around the outer surface of the protective layer; the silicon thin film is formed using any one of the above processing methods.

Further, the present invention also provides a plasma processing device, which device includes: a vacuum reaction chamber, and components located in the vacuum reaction chamber that are in contact with the plasma, and the components have the components described above. Characteristics.

The advantage of the present invention is that: the present invention provides a processing method for improving the plasma etching rate. Through special process steps, a layer of highly dense silicon film is formed on the surface of the shower head and other parts containing the protective layer, which not only isolates the plasma The direct contact between the body and the components in the vacuum chamber minimizes particle contamination, increases the service life of the components, and avoids the adsorption of atoms contained in the reaction gas on the surface of components such as shower heads, achieving a uniform and stable etching rate. , thereby improving production efficiency and reducing production costs.

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary skill in the technical field to which the present invention belongs without making any progressive changes shall fall within the scope of protection of the present invention.

In order to prevent plasma from corroding components in the vacuum reaction chamber and causing contaminants, one solution is to introduce a mixed gas of ammonia (NH ₃ ) and argon (Ar) into the vacuum reaction chamber to age the surface of the components. , to form a layer of silicon coating, but this coating will have an impact on the stability of the etching rate due to the loose structure of the surface, as shown in Figure 1. In organic etching, for the hydrogen (H) process, each The substrate continuously records the etching rate points during the reaction time. It can be seen from the figure that for a single substrate, the etching rate fluctuates from high to low, and both sets of experimental data (1) and (2) show that It shows that as the number of etched substrates increases, the change trend of the etching rate continues to decrease. For organic etching, for the carbon (C) process, as shown in Figure 2, four sets of experimental data show that as the number of etched substrates increases, the etching rate gradually increases from a lower value to a stable region. phenomenon. No matter which of the above organic etching processes is used, it will cause damage to the uniformity of substrate etching and cause fluctuations in process parameters during mass production.

The specific reason can be explained in conjunction with Figure 3. Taking the component as a shower head as an example, for the H-containing process, because the surface of the silicon (Si)-containing coating is low in density, the surface is easy to absorb enough H, which in turn affects subsequent processes. Organic etching produces a higher etching rate. As H is consumed, the etching rate gradually decreases and stabilizes. For the C-containing process, the low density of the surface of the shower head is easy to adsorb enough C, which in turn has a retarding effect on subsequent organic etching. With the consumption of C, the etching rate gradually increases and then tends to to stability.

Embodiment 1

As shown in Figure 4, the processing method for improving the plasma etching rate of the present invention includes the following steps: S1, thermally oxidize the silicon wafer to form a denser silicon dioxide layer on its surface, and then The substrate is placed into the plasma processing device; S2, the gas shower head containing the protective layer is placed into the plasma processing device. The protective layer can be a yttrium oxide (Y ₂ O ₃ ) coating or aluminum oxide/ Silicon carbide (Al ₂ O ₃ /SiC) coating to improve the corrosion resistance of the gas shower head; S3, introduce organic etching gas as the reactive gas, apply a radio frequency signal to the vacuum reaction chamber, and excite the reactive gas For plasma, the denser silicon dioxide is bombarded to cover the surface of the gas shower head; S4, use the plasma processing device that has completed the above steps to perform the organic etching process.

After being covered with a high-density silicon film, the gas shower head can avoid the adsorption of H or C, and can isolate the plasma from direct corrosion of the protective layer, which means reducing the formation of pollutants.

In some embodiments, the treatment method is performed during the warm-up process, especially after the plasma treatment device is shut down for a long time and high-bias cleaning is performed. The above steps can be run, or contaminants can be detected after multiple reactions. When the reaction rate increases or the reaction rate fluctuates greatly, repeat the above steps.

In other embodiments, the thermal oxidation treatment of the silicon wafer is performed in a furnace tube process. The silicon wafer is placed at a temperature greater than 800°C, and hydrogen (H ₂ ) and oxygen (O ₂ ) are introduced, That is, wet oxidation, the flow ratio of H ₂ and O ₂ is between 1:4-4:1, especially the flow ratio of 10:7-13:10 can be selected. H ₂ and O ₂ produce water under high temperature conditions. Steam reacts with the surface of the silicon wafer to produce hot silicon dioxide with higher density. H ₂ gas can increase the stress between silicon dioxide. High stress is accompanied by high density, but too high stress can also cause The nature of the membrane is prone to breakage and peeling, which affects the content of pollutants. When using plasma to bombard a silicon wafer, it is preferred to keep the temperature of the plasma less than 130°C, and control the thickness of the high-density silicon film formed on the surface of the shower head to less than 30nm. A smaller thickness can reduce the density of the high-density silicon film. The stress on the surface molecules prevents them from falling off easily, which means they will not become a source of particle pollution.

Embodiment 2

As shown in Figure 5, the difference between the processing method for improving the plasma etching rate of the present invention and the first embodiment is that before placing the thermally oxidized silicon wafer in the series of steps, an unoxidized general silicon wafer is first placed. , then a mixed gas of NH ₃ and Ar is introduced to age the protective layer on the surface of the shower head, and a radio frequency signal is applied to the vacuum reaction chamber to excite the mixed gas into plasma and then react with the silicon wafer. The specific reaction mechanism As follows: NH ₃ +eàNH+H*; Ar+eàAr++2e; xH*+SiàSiHx.

SiHx will be re-deposited on the surface of gas shower heads and other components to become a Si deposition layer. The physical bombardment effect of Ar+ will accelerate the deposition speed of the Si deposition layer, accelerate passivation, and generate a silicon coating layer on the surface of the shower head. Here Basically, the thermally oxidized silicon wafer is placed, and the organic etching gas plasma is excited to cover the silicon coating of the shower head with a highly dense silicon film. The silicon coating has a similar structure to the high-density silicon film. The combination is relatively stable and not easy to fall off. The two work together to achieve a better effect of reducing pollutants. Moreover, this embodiment does not require any modification to the existing gas shower head. The covered silicon coating is removed and then covered with a new high-density silicon film, which has strong applicability.

In this embodiment, the organic etching gas includes H ₂ and silane (SiH ₄ ), and also includes one or more of oxygen (O ₂ ), carbon monoxide (CO), and carbon dioxide (CO ₂ ).

Comparative Example 1

As shown in Figure 6, for the H-containing process in the organic etching reaction, the broken line (1) is the monitoring of the number of pollutants produced by the shower head using the silicon coating treatment method during the etching process. The broken lines (2) and (3) are the Monitor the number of pollutants produced during the etching process under different pressures after the treatment method of the present invention. It can be seen that as the number of processed substrates (pcs) increases, although the silicon coating treatment method also reduces the generation of pollutants, the average value of the two sets of data still reaches 4.7 (ea). After adopting the treatment method of the present invention, the number of pollutants was measured at a pressure of 270 mTorr (mT) and recorded as a broken line (2). It was found that the average number of pollutants was 2.8ea, and the pollution was measured at a pressure of 60 mT. The number of objects is recorded as a broken line (3), and the average number of pollutants is 2.4ea. It can be seen that the treatment method of the present invention can achieve better technical effects in preventing the generation of pollutants.

As shown in Figure 7, for the H-containing process in the organic etching reaction, the broken line (2) is the monitoring of the etching rate of the shower head using the silicon plating treatment method, and the broken lines (1) and (3) are the monitoring of the etching rate using the treatment method of the present invention. Then the etching rate was monitored under different pressures. It can be seen that although the reaction rate using the silicon plating treatment method is relatively stable, the average rate of 675.1 Angstroms/min (Å/min) is higher than the rate of 668 Å/min of the treatment method of the present invention at the same pressure of 60mT, at the broken line (1 ), the treatment method of the present invention can also maintain a low average etching rate when the pressure is 270mT. In the actual reaction, it is expected that the etching rate will remain stable and not be too fast. Therefore, in conjunction with the etching rate using the silicon plating treatment method in Figure 1 as the substrate increases, the etching rate first becomes faster and then becomes slower. The treatment method of the present invention is more Can meet actual etching needs.

Comparative Example 2

Regarding the C-containing process in the organic etching reaction, Figure 8 shows a line chart of the number of pollutants produced by the gas shower head treated by the method of the present invention. There are three sets of experimental data. Each set measures the number of contaminants in increasing order of the number of substrates processed. It can be seen that after etching reactions of up to 425 wafers, the number of contaminants can be maintained within 6. For the use of silicon plating treatment methods, the number of pollutants produced can reach hundreds. It can be seen that in the organic etching process containing C, the treatment method of the present invention has a better effect on reducing pollutants than the silicon plating method.

As shown in Figure 9, for the C-containing process in the organic etching reaction, the bar graph (1) is the monitoring of the etching rate of the shower head after using the silicon coating treatment method. The bar graphs (2), (3) and ( 4) is the monitoring of the etching rate under different substrate numbers after using the processing method of the present invention. The histogram (1) shows the changes in etching rate at a maximum of 10 wafers. According to the increase in the number of substrates, 3 groups were selected to record the etching rate. It can be seen that the reaction rate is gradually increasing, while the histogram ( 2), (3) and (4) respectively selected 3 groups to record the etching rate when the number of substrates was up to 10, 125 and 340. It can be seen that the reaction rate has always maintained a relatively stable value, from uniform to The linear fold line can also be shown, and the processing method of the present invention has a more stable rate than the silicon plating processing method.

Embodiment 3

Capacitively coupled plasma (CCP) etching equipment is a device that uses radio frequency power applied to the plate to generate plasma in the reaction chamber through capacitive coupling and is used for etching. As shown in Figure 10, it is a schematic structural diagram of a capacitively coupled plasma (CCP) etching equipment, which includes a vacuum reaction chamber 100, a high-frequency radio frequency power supply, and a bias radio frequency power supply.

The vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber side wall 10 made of metal material, a top cover 9, an upper electrode element and a lower electrode element.

The upper electrode component includes: Gas shower head 7, used to introduce reaction gas and serve as the upper electrode of the reaction chamber; The installation base plate 8 is located above the gas shower head 7. The gas shower head 7 is fixedly connected to the top cover 9 of the reaction chamber through the installation base plate 8; The upper ground ring 6 is arranged around the gas shower head 7. When radio frequency power is applied to the lower electrode, a radio frequency loop is formed between the radio frequency power supply-lower electrode-plasma-upper electrode-upper ground ring.

The lower electrode component includes: The base 1 is used to carry the electrostatic chuck (ESC) 2. It is equipped with a temperature control device to realize the temperature control of the upper substrate w. Since it is a conductive material, it also serves as the lower electrode. The formation between the upper electrode and the lower electrode Plasma treatment area; The electrostatic chuck 2 is used to carry the substrate w. The electrostatic chuck 2 is provided with a DC electrode inside. The DC electrode generates DC adsorption between the back side of the substrate w and the bearing surface of the electrostatic chuck 2 to realize the adsorption of the substrate w. fixed; Focusing ring 3, which is arranged around the substrate w, is used to adjust the process processing effect in the edge area of the substrate w; Isolation ring 4 is provided around the base 1 to isolate the base 1 from the lower ground ring 11; Plasma confinement ring 5, which is located between the base and the side wall 10 of the reaction chamber, is used to confine the plasma in the reaction area while allowing gas to pass; The lower ground ring 11 is located below the plasma confinement ring 5 and functions to provide an electric field shield to avoid plasma leakage.

The gas shower head 7 is arranged opposite to the base 2. The gas shower head 7 is connected to a gas supply device and is used to transport reaction gas to the vacuum reaction chamber 100 and at the same time serve as the upper electrode of the vacuum reaction chamber; The base 2 is used to support the substrate w to be processed and also serves as the lower electrode of the vacuum reaction chamber 100. A reaction area is formed between the upper electrode and the lower electrode. At least one high-frequency radio frequency power supply is applied to one of the upper electrode or the lower electrode to generate a radio frequency electric field between the upper electrode and the lower electrode to dissociate the reaction gas into plasma, and the plasma acts on the material to be treated The substrate w is used to implement the etching process on the substrate w.

A focus ring 3 and an edge ring are arranged around the base 1. The focus ring 3 and edge ring are used to adjust the electric field or temperature distribution around the substrate w and improve the uniformity of processing of the substrate w. A plasma confinement ring 5 is arranged around the edge ring, and an exhaust channel is provided on the plasma confinement ring 5. By reasonably setting the depth-to-width ratio of the exhaust channel, the reaction gas can be discharged while the plasma is constrained up and down. The reaction area between the electrodes prevents plasma from leaking into the non-reaction area and causing damage to components in the non-reaction area.

The high-frequency radio frequency power supply is applied to the upper electrode or the lower electrode through a high-frequency radio frequency matching network to control the plasma concentration in the reaction chamber. The biased radio frequency power is usually applied to the base 1 to control the direction of the plasma.

Before performing the etching process, first place the silicon wafer that has been oxidized by the furnace tube process into the vacuum reaction chamber 100, and then introduce organic etching gases including H ₂ , SiH ₄ , and one or more of O ₂ , CO and CO ₂ , and then apply a high-frequency radio frequency signal. Under the excitation of the radio frequency signal, the organic gas is excited into plasma, bombards the oxidized silicon wafer, and covers the surface of the component with highly dense silicon dioxide molecules, forming Highly dense silicone film.

The above-mentioned capacitively coupled plasma (CCP) etching equipment adopts the processing method of the present invention to evenly form a layer of highly dense silicon film on the surface of the parts that may be exposed to the plasma in the etching chamber, thereby isolating the Y ₂ O ₃ of the parts. The direct contact between the coating or the Al ₂ O ₃ /SiC coating protective layer and the plasma reduces the possibility of micro-particle contamination during the etching process, and at the same time avoids the adsorption of H or C in the organic etching gas on the surface of the component to affect the etching. Destabilizing effects on the rate.

Example 4

Inductively coupled plasma reaction device (ICP) etching equipment is a device that uses the energy of a radio frequency power supply through an inductor coil and enters the inside of the reaction chamber in the form of magnetic field coupling to generate plasma and use it for etching. As shown in Figure 11, it is a schematic structural diagram of an inductively coupled plasma reaction device (ICP). The structures of the lower electrode elements of ICP and CCP are similar.

The inductively coupled plasma reaction device includes a vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber side wall 105 made of metal material. An insulating window 130 is disposed above the reaction chamber side wall 105, and an insulating window 130 is disposed above the insulating window 130. Inductive coupling coil 140 is connected to the radio frequency power source 145 .

A gas injection port 150 is provided at one end of the reaction chamber side wall 105 close to the insulation window 130. In some equipment, a gas injection port is also provided in the center area of the insulation window 130. The gas injection port 150 is connected to the gas supply device 101. The reaction gas in the gas supply device 101 enters the vacuum reaction chamber 100 through the gas injection port 150. The radio frequency power of the radio frequency power source 145 drives the inductive coupling coil 140 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas is ionized to generate plasma. Body 160. A base 110 is provided downstream of the vacuum reaction chamber 100, and an electrostatic chuck 115 is placed on the base 110 for supporting and fixing the substrate 120. The plasma 160 contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the substrate 120 to be processed, causing the surface of the substrate 120 to change shape. When the appearance changes, the etching process is completed. An exhaust pump 125 is also provided below the vacuum reaction chamber 100 for discharging reaction by-products into the vacuum reaction chamber 100 .

Before performing the etching process, first place the silicon wafer that has been oxidized by the furnace tube process into the vacuum reaction chamber, and then introduce organic etching gases including H ₂ , SiH ₄ , and one or more of O ₂ , CO, and CO ₂ . A high-frequency radio frequency signal is then applied. Under the excitation of the radio frequency signal, the organic gas is excited into plasma, bombards the thermally oxidized silicon wafer, and covers the surface of the component with highly dense silicon dioxide molecules, forming a Highly dense silicone film.

The above-mentioned inductively coupled plasma (CCP) etching equipment adopts the processing method of the present invention to evenly form a layer of highly dense silicon film on the surface of the parts that may be exposed to the plasma in the etching chamber, thereby isolating the Y ₂ O ₃ of the parts. The direct contact between the coating or the Al ₂ O ₃ /SiC coating protective layer and the plasma reduces the possibility of micro-particle contamination during the etching process, and at the same time avoids the adsorption of H or C in the organic etching gas on the surface of the component to affect the etching. Destabilizing effects on the rate.

The components for improving the plasma etching rate disclosed in the present invention are not limited to being applied to the plasma processing devices of the above two embodiments. They can also be applied to other plasma processing devices, and will not be described again here.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and substitutions of the present invention will be apparent to those with ordinary skill in the technical field to which the present invention pertains after reading the above content. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.

1,110: base 10:Side wall 100: Vacuum reaction chamber 101:Gas supply device 105: Reaction chamber side wall 11: Lower ground ring 115:Electrostatic chuck 120,w:Substrate 125:Exhaust pump 130:Insulation window 140:Inductive coupling coil 145: RF power source 150:Gas injection port 160:Plasma 2:Electrostatic chuck 3: Focus ring 4: Isolation ring 5: Plasma confinement ring 6: Upper grounding ring 7:Gas sprinkler head 8:Install the base board 9:Top cover S1～S4: steps

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the conventional technology, the drawings needed to be used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings in the following description are only These are some embodiments of the present invention. For those with ordinary knowledge in the technical field to which the present invention belongs, other drawings can be obtained based on these drawings without making any progressive changes. Figure 1 is a schematic diagram of the hydrogen-containing process rate of the prior art treatment method; Figure 2 is a schematic diagram of the carbon-containing process rate of the prior art treatment method; Figure 3 is a schematic diagram showing the principle of unstable rate of the prior art processing method; Figure 4 is a new component processing method provided in Embodiment 1; Figure 5 is a new component processing method provided in Embodiment 2; Figure 6 is a comparison chart of pollutants in hydrogen-containing processes between the new treatment method and the prior art treatment method; Figure 7 is a comparison chart of the rate of hydrogen-containing processes between the new treatment method and the prior art treatment method; Figure 8 is a line chart of pollutants produced by the new treatment method for carbon-containing processes; Figure 9 is a comparison chart of the rate of carbon-containing processes between the new treatment method and the prior art treatment method; Figure 10 is a schematic structural diagram of a capacitively coupled plasma etching equipment processed by the processing method of the present invention; and Figure 11 is a schematic structural diagram of an inductively coupled plasma etching equipment processed by the processing method of the present invention.

S1~S4: steps

Claims (16)

A processing method for improving plasma etching rate, wherein the method includes the following steps: placing a component in a vacuum reaction chamber; placing a thermally oxidized silicon wafer in the vacuum reaction chamber; An organic etching gas is introduced into the reaction chamber; a radio frequency signal is applied to the vacuum reaction chamber, and the radio frequency signal excites the organic etching gas into plasma. The particles generated by the plasma bombardment of the silicon wafer form a layer on the surface of the component. Silicon film; wherein the organic etching gas includes H ₂ , SiH ₄ and oxygen-containing gas. The processing method for improving plasma etching rate as described in claim 1, wherein the thermal oxidation treatment includes the following steps: placing the silicon wafer in a furnace tube with a temperature greater than 800°C, and passing in H ₂ and O ₂ , the flow ratio of H ₂ and O ₂ is 1:4-4:1. The processing method for improving plasma etching rate as described in claim 2, wherein the flow ratio of H ₂ and O ₂ is 10:7-13:10. The processing method for improving plasma etching rate as described in claim 1, wherein the oxygen-containing gas includes one or more of O ₂ , CO and CO ₂ . The processing method for improving plasma etching rate as described in claim 4, wherein the temperature of the plasma is less than 130°C. The processing method for improving plasma etching rate as described in claim 1, wherein the plasma process conditions are: pressure less than 150mT; radio frequency power greater than 200W; radio frequency frequency range 2-60MHZ. The processing method for improving plasma etching rate as described in claim 6, wherein the radio frequency signal adopts a continuous mode or a pulse mode. The processing method for improving plasma etching rate as described in claim 1, wherein the The thickness of the silicon film is less than 30nm. The processing method for improving the plasma etching rate as described in claim 1, wherein the parts refer to the parts in contact with the plasma in the vacuum reaction chamber, including the inner wall of the reaction chamber, the ground ring, the moving ring, and the electrostatic chuck element , at least one of a covering ring, a focusing ring, an insulating ring, a plasma confinement device and an inner lining. The processing method for improving plasma etching rate as claimed in claim 1, wherein a protective layer for preventing plasma corrosion is provided on the surface of the component. The processing method for improving plasma etching rate as described in claim 10, wherein the protective layer is a Y ₂ O ₃ coating or an Al ₂ O ₃ /SiC coating. The processing method for improving plasma etching rate as described in claim 10, wherein a silicon plating layer is provided on the protective layer to prevent the generation of contaminants. A component used in a plasma processing environment, including a component body, wherein the surface of the component body is provided with a protective layer for preventing plasma corrosion, and the protective layer is a Y ₂ O ₃ coating or Al ₂ O ₃ /SiC coating, and a silicon film wrapped on the outer surface of the protective layer; the silicon film is formed using the treatment method for improving the plasma etching rate described in any one of claims 1-12. The component as described in claim 13, wherein the component refers to the component in contact with the plasma in the vacuum reaction chamber, including the inner wall of the reaction chamber, the ground ring, the moving ring, the electrostatic chuck element, the covering ring, the focusing ring, At least one of an insulating ring, a plasma confinement device and a liner. A gas shower head for a plasma processing device, wherein the gas shower head includes: a gas shower head body; a protective layer wrapped around the surface of the gas shower head body to prevent plasma corrosion , the protective layer is a Y ₂ O ₃ coating or an Al ₂ O ₃ /SiC coating, and a silicon film wrapped on the outer surface of the protective layer; the silicon film adopts the method described in any one of claims 1-12 A process for improving plasma etch rates is formed. A plasma processing device, wherein the plasma processing device includes: a vacuum reaction chamber, and a component located in the vacuum reaction chamber that is in contact with the plasma, and the component has the characteristics described in claim 13.