CN101553900B - 包括用于减少聚合物沉积的rf吸收材料的等离子体限制环 - Google Patents

包括用于减少聚合物沉积的rf吸收材料的等离子体限制环 Download PDF

Info

Publication number
CN101553900B
CN101553900B CN2006800220626A CN200680022062A CN101553900B CN 101553900 B CN101553900 B CN 101553900B CN 2006800220626 A CN2006800220626 A CN 2006800220626A CN 200680022062 A CN200680022062 A CN 200680022062A CN 101553900 B CN101553900 B CN 101553900B
Authority
CN
China
Prior art keywords
plasma
confinement rings
plasma confinement
ring
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800220626A
Other languages
English (en)
Chinese (zh)
Other versions
CN101553900A (zh
Inventor
詹姆斯·H·罗杰斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN101553900A publication Critical patent/CN101553900A/zh
Application granted granted Critical
Publication of CN101553900B publication Critical patent/CN101553900B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
CN2006800220626A 2005-06-20 2006-06-14 包括用于减少聚合物沉积的rf吸收材料的等离子体限制环 Expired - Fee Related CN101553900B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/155,493 US7713379B2 (en) 2005-06-20 2005-06-20 Plasma confinement rings including RF absorbing material for reducing polymer deposition
US11/155,493 2005-06-20
PCT/US2006/023198 WO2007001865A2 (en) 2005-06-20 2006-06-14 Plasma confinement rings including rf absorbing material for reducing polymer deposition

Publications (2)

Publication Number Publication Date
CN101553900A CN101553900A (zh) 2009-10-07
CN101553900B true CN101553900B (zh) 2011-08-17

Family

ID=37572195

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800220626A Expired - Fee Related CN101553900B (zh) 2005-06-20 2006-06-14 包括用于减少聚合物沉积的rf吸收材料的等离子体限制环

Country Status (7)

Country Link
US (3) US7713379B2 (https=)
JP (2) JP5492411B2 (https=)
KR (2) KR101468340B1 (https=)
CN (1) CN101553900B (https=)
MY (1) MY164564A (https=)
TW (1) TWI416996B (https=)
WO (1) WO2007001865A2 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US8790499B2 (en) * 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
CN101809717B (zh) 2007-09-25 2012-10-10 朗姆研究公司 用于等离子处理设备的喷头电极总成的温度控制模块
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8547085B2 (en) * 2008-07-07 2013-10-01 Lam Research Corporation Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
KR102285582B1 (ko) * 2009-08-31 2021-08-03 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
KR200464037Y1 (ko) 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
WO2011149615A2 (en) * 2010-05-24 2011-12-01 Applied Materials, Inc. Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus
EP2602816A1 (en) * 2010-08-06 2013-06-12 Asahi Glass Company, Limited Support substrate
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US9076826B2 (en) 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
CN102394255A (zh) * 2011-11-15 2012-03-28 苏州思博露光伏能源科技有限公司 在柔性薄膜光伏电池制造中喷淋电极同时沉积薄膜的技术
WO2014018285A1 (en) * 2012-07-27 2014-01-30 Applied Materials, Inc. Roughened substrate support
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US11127619B2 (en) * 2016-06-07 2021-09-21 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
KR200491165Y1 (ko) 2017-04-14 2020-05-15 주식회사 월덱스 플라즈마 에칭장치용 이체형 한정 링
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN112802729B (zh) * 2019-11-13 2024-05-10 中微半导体设备(上海)股份有限公司 带温度维持装置的隔离环
CN112928007B (zh) * 2019-12-06 2023-09-12 中微半导体设备(上海)股份有限公司 等离子体处理设备及用于等离子体处理设备的下电极组件
JP7657802B2 (ja) * 2019-12-19 2025-04-07 ラム リサーチ コーポレーション 消耗チャンバ部品におけるカプセル化ｒｆｉｄ
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
KR102326741B1 (ko) * 2021-08-18 2021-11-16 주식회사 린텍 실리콘 파우더와 고주파 가열장치를 이용한 실리콘 부품의 접합 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129806A (en) * 1996-03-01 2000-10-10 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6464843B1 (en) * 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
CN1405857A (zh) * 1995-07-10 2003-03-26 兰姆研究有限公司 利用等离子体约束装置的等离子体蚀刻装置

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106734U (https=) * 1990-02-17 1991-11-05
JP3175117B2 (ja) * 1993-05-24 2001-06-11 東京エレクトロン株式会社 ドライクリーニング方法
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
JPH07254588A (ja) * 1994-03-16 1995-10-03 Toshiba Corp プラズマ表面処理装置
JPH08250488A (ja) * 1995-01-13 1996-09-27 Seiko Epson Corp プラズマ処理装置及びその方法
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
US6008130A (en) * 1997-08-14 1999-12-28 Vlsi Technology, Inc. Polymer adhesive plasma confinement ring
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6063234A (en) * 1997-09-10 2000-05-16 Lam Research Corporation Temperature sensing system for use in a radio frequency environment
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
KR100258984B1 (ko) * 1997-12-24 2000-08-01 윤종용 건식 식각 장치
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6227140B1 (en) * 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
TW492041B (en) * 2000-02-14 2002-06-21 Tokyo Electron Ltd Method and device for attenuating harmonics in semiconductor plasma processing systems
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP2003224115A (ja) * 2001-11-05 2003-08-08 Tokyo Electron Ltd プラズマプロセスにおけるチャンバの共振を緩和する装置並びに方法
TWI272877B (en) * 2001-12-13 2007-02-01 Tokyo Electron Ltd Ring mechanism, and plasma processing device using the ring mechanism
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US6926803B2 (en) * 2002-04-17 2005-08-09 Lam Research Corporation Confinement ring support assembly
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
JP2006303309A (ja) * 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置
KR100621778B1 (ko) * 2005-06-17 2006-09-11 삼성전자주식회사 플라즈마 처리 장치
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US7718045B2 (en) * 2006-06-27 2010-05-18 Applied Materials, Inc. Ground shield with reentrant feature

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1405857A (zh) * 1995-07-10 2003-03-26 兰姆研究有限公司 利用等离子体约束装置的等离子体蚀刻装置
US6129806A (en) * 1996-03-01 2000-10-10 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6464843B1 (en) * 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber

Also Published As

Publication number Publication date
WO2007001865A2 (en) 2007-01-04
KR20130023372A (ko) 2013-03-07
WO2007001865A3 (en) 2009-06-18
US7713379B2 (en) 2010-05-11
JP2012099829A (ja) 2012-05-24
KR20080025690A (ko) 2008-03-21
TWI416996B (zh) 2013-11-21
CN101553900A (zh) 2009-10-07
JP2009500812A (ja) 2009-01-08
MY164564A (en) 2018-01-15
JP5220178B2 (ja) 2013-06-26
US20060283552A1 (en) 2006-12-21
US20100178774A1 (en) 2010-07-15
US20130095666A1 (en) 2013-04-18
US9123650B2 (en) 2015-09-01
JP5492411B2 (ja) 2014-05-14
TW200708207A (en) 2007-02-16
KR101468340B1 (ko) 2014-12-03
US8337662B2 (en) 2012-12-25

Similar Documents

Publication Publication Date Title
CN101553900B (zh) 包括用于减少聚合物沉积的rf吸收材料的等离子体限制环
CN102867726B (zh) 一种等离子约束环组件、等离子处理装置以及处理半导体衬底的方法
KR102335248B1 (ko) 플라즈마 프로세싱 챔버 내의 엘라스토머 시일의 수명을 연장시키는 크기로 형성된 에지 링
EP1145273B1 (en) Low contamination high density plasma etch chambers and methods for making the same
US6464843B1 (en) Contamination controlling method and apparatus for a plasma processing chamber
CN101385127B (zh) 用于减少介电蚀刻中微粒污染的密封弹性材料粘合的Si电极
WO2008048543A1 (en) Upper electrode backing member with particle reducing features
JP2002510858A (ja) 汚染制御方法およびプラズマ処理チャンバ
CN101529561A (zh) 石英保护环

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110817

Termination date: 20190614

CF01 Termination of patent right due to non-payment of annual fee