CN101552255A - 具有紧密密封的电路布置的功率半导体模块及其制造方法 - Google Patents

具有紧密密封的电路布置的功率半导体模块及其制造方法 Download PDF

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CN101552255A
CN101552255A CNA2009101330510A CN200910133051A CN101552255A CN 101552255 A CN101552255 A CN 101552255A CN A2009101330510 A CNA2009101330510 A CN A2009101330510A CN 200910133051 A CN200910133051 A CN 200910133051A CN 101552255 A CN101552255 A CN 101552255A
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power semiconductor
interface unit
sealing area
substrate
conductive traces
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CN101552255B (zh
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C·格布尔
H·布拉姆尔
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Semikron GmbH and Co KG
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Abstract

本发明描述了一种功率半导体模块，包括衬底；在衬底上形成的电路布置，所述电路布置包括多个导体迹线，所述多个导体迹线是彼此电绝缘的；而且包括布置在所述多个导体迹线上的功率半导体部件。所述功能半导体部件通过连接器件以电路匹配的方式连接，所述连接器件包括至少两个导电层和至少一个电绝缘层的交替层序列。在这种情况下，衬底具有第一密封区域，该区域没有任何中断地封住了电路布置。此外，该密封区域通过连接层连接到连接器件的一层上的指定的第二密封区域。根据本发明，该功率半导体模块是通过向衬底、向功率半导体部件以及向连接器件施加压力来制造的。

Description

具有紧密密封的电路布置的功率半导体模块及其制造方法
技术领域
本发明描述了一种功率半导体模块及其制造方法，其中该功率半导体模块的电路布置是紧密密封的，以抵抗周围影响。尤其是当在车辆或苛刻的环境的其它应用中使用电气驱动时，以特定方式来实施功率半导体模块是有利的。这种实施应当保护功率半导体模块的电路布置不受高温波动的影响，尤其是在高温波动与湿气结合时更是如此。
背景技术
根据DE 196 17 055 C1已知功率半导体模块，其中公开了用于功率半导体模块内部绝缘的所谓预浸料坯(prepreg)。在这里和下文中，预浸料坯应当理解为是指包括绝缘材料和塑料基体的半成品的各种配置，其中该半成品是通过施加压力和/或温度来制备的，并因此形成与至少一个对应连接伴的粘性连接。
例如根据DE 10 2004 021 927 A1，同样已知的是用于功率半导体模块内部绝缘的以各种方式布置的凝胶状绝缘材料。根据现有技术，这些功率半导体模块具有塑料外罩，该塑料外罩具有用于负载和辅助端子的向外引出的端子元件。
例如，DE 103 55 925 A1公开了用于功率半导体模块的电路布置的电路匹配(circuit-conforming)连接的、包括交替的导电层和绝缘层序列的连接器件。这种类型的连接器件特别适用于功率半导体模块的紧凑构造。
同样，盘形单元(disc cell)也已经已知很长时间了；它们在内部具有一个或多个抵抗周围影响的密封的功率半导体部件。这种类型的盘形单元通常没有如从具有塑料外罩的功率半导体模块已知的复杂的电路布置，例如三相桥接电路。
发明内容
本发明的目的在于说明一种功率半导体模块及其制造方法，其中功率半导体模块的电路布置是密封的，以抵抗周围影响，并且其中该电路布置同时还可实现灵活配置并且制造简单。
根据本发明，通过包括权利要求1的特征的功率半导体模块及通过根据权利要求6的制造方法实现该目的。优选实施方式在从属权利要求中描述。
本发明的出发点是功率半导体模块的电路布置，所述功能半导体模块包括衬底，所述电路布置包括布置在其衬底上的导体迹线和布置在导体迹线上的功率半导体部件及相对于功率半导体部件布置的连接器件。在这种情况下，电路布置被理解为是指对于实现电气功能所需的所有导体迹线和半导体部件的整体。至少两个导电层和至少一个电绝缘层的交替层序列在这里充当连接器件。电路布置的导体迹线在衬底上形成并且彼此电绝缘。它们支承功率半导体部件并形成功率半导体部件的电路匹配连接中的一些。另外的电路匹配连接是通过连接器件形成的。为此，至少一个导电层是固有构成的并形成连接迹线。同样，在不同的导电层之间提供电镀通孔(plated-through hole)可能是优选的。
根据本发明，衬底具有第一密封区域，该区域没有任何中断地封住了电路布置。所述密封区域可以配置为围绕电路布置的框架并作为例如类似于导体迹线的金属层或者作为衬底上的自由区域形成。该第一密封区域通过连接层紧密密封地连接到在金属层或绝缘层上的连接器件的指定的第二密封区域。这种连接优选地作为压力烧结连接形成。
在这里和下文中，术语压力烧结连接不仅应当理解为已知的借助于烧结金属的两种金属的连接，还应当理解为与预浸料坯而不是烧结金属的电绝缘连接，其中在连接形成过程中的温度和压力条件对应于借助于烧结金属的已知压力烧结连接中的温度和压力条件。
根据本发明的用于形成这种类型功率半导体模块的方法的特征在于以下基本步骤：
·将功率半导体部件布置在衬底的指定导体迹线上，其中在这里在相应的功率半导体部件与导体迹线上指定区域之间布置烧结金属层是优选的；
·在第一密封区域上布置连接层，其中连接层实施为例如烧结金属层或预浸料坯；
·相对于功率半导体部件、相对于第一密封区域并相对于衬底布置连接器件；理所当然，在这里第二密封区域也相对于连接层并由此相对于第一密封区域定位；
·向衬底、向功率半导体部件并向连接器件施加压力并优选地还施加温度，由此在第一和第二密封区域之间形成压力烧结连接。
这里可能特别优选的是，在布置功率半导体部件之后，凝胶状绝缘材料(例如硅胶)完全围绕它们并在远离衬底的主要区域的边缘上沿周边布置。
在示例实施方式的相应描述中提及关于该电路布置的特别优选的改进方案。另外，本发明的解决方案根据示例实施方式及图1至8更详细地解释。
附图说明
图1以侧视图的形式示出了根据现有技术的具有连接器件的功率半导体模块的一部分。
图2以平面图的形式示出了根据现有技术的具有连接器件的功率半导体模块的一部分。
图3以侧视图的形式示出了根据本发明的功率半导体模块的第一配置的一部分。
图4以侧视图的形式示出了根据本发明的功率半导体模块的第二配置的一部分。
图5以侧视图的形式示出了根据本发明的功率半导体模块的第三配置的一部分。
图6示出了根据本发明的功率半导体模块的衬底的平面图。
图7示出了根据本发明的功率半导体模块的第一连接器件的一部分。
图8示出了根据本发明的功率半导体模块的第二连接器件的一部分。
具体实施方式
图1以侧视图的形式示出了根据现有技术的具有连接器件(4)的功率半导体模块的一部分。在这里和以下所有图中免去了对外罩及必要的外部负载和辅助端子元件的图示。在这里，该图示出了例如通常称为所谓DCB(直接覆铜)或IMS(绝缘金属衬底)衬底的衬底(2)，但这并不是要表示限定于这种衬底。衬底(2)具有绝缘层(20)，导体迹线(22a/b)布置在绝缘层(20)上面并且彼此电绝缘。所述导体迹线(22a)中的一个在这里支承(carry)未封装的半导体部件(3)，诸如用于例如驱动三相电动机的功率晶体管。
烧结金属层(52)布置成用于在支承半导体部件(3)的第一导体迹线(22a)和半导体部件(3)的第一主要区域上的指定接触区域(32)之间的导电性连接。在制造中，在压力烧结处理之后，所述烧结金属层(52)表现出高可靠性的导电性连接。
半导体部件(3)的第二主要区域有两个接触区域(34、36)：第一大面积发射极端子区域(34)和另外的较小的栅极端子区域(36)。烧结金属层又布置在发射极端子区域(34)上。所述烧结金属层用于发射极端子区域(34)到连接器件4的电连接。
连接器件(4)在这里实施为在烧结连接的区域(50、52)中的金属膜(40)，该金属膜(40)优选地是由铜制成，并具有贵金属涂层。选择该金属膜(40)的厚度使得其至少具有与根据现有技术的引线接合连接相同的电流传送能力。
连接器件(4)构成半导体部件(3)的发射极端子区域(34)和衬底(2)的第二导体迹线(22b)之间的导电性连接。连接器件(4)到第二导体迹线(22b)的连接同样实施为压力烧结连接。金属膜(40)优选地在两个接触区域之间具有弓形路线(420)。
绝缘材料(6)布置在由连接器件(4)的弓形路线(420)、衬底(2)和半导体部件(3)形成的立体区域(volume region)中。所述绝缘材料是在制造过程期间施加到随后被连接器件(4)覆盖的区域中的。在这种配置的情况下，其是沿半导体部件(3)的横向边缘(30)以及上边缘(38)的外部部分的区域，参见图2。
所使用的绝缘材料(6)优选地是多成分硅树脂化合物，它以配比(metering)或灌注方法施加到半导体部件(3)的边缘并通过UV曝光交联。因此，首先提供了绝缘材料(6)一定程度的坚韧性，而其次，如果该电路布置设计成用于相应较高的电压，则这种硅树脂化合物还适于内部绝缘。
图2以平面图的形式示出了根据现有技术的具有连接器件的功率半导体模块的一部分。在这里，该图示出了与关于图1所述的电路布置的相同部分。
在这里，该图示出了绝缘材料(6)的区域性范围，该绝缘材料(6)在连接器件(4)与导体迹线(22b)以及连接部件(4)与半导体部件(3)(或者其发射极端子区域(34))的接触区域(500、540)之间的区域中并还在沿连接器件(4)的区域中。
根据这种配置，在压力沿图中平面方向被区域性地引入到压力烧结连接环境中的情况下，绝缘材料(6)首先用作准流体静力元件，该准流体静力元件在其界面之间均匀分布压力并由此在压力施加过程中防止对半导体部件造成损坏。其次，它还用于已经描述过的根据本发明的功率半导体模块的电路布置的电绝缘。
图3以侧视图的形式示出了根据本发明的功率半导体模块的第一配置的一部分。衬底(2)及布置在导体迹线(22)上的功率半导体部件(3)的基本构造与关于图1所描述的相同。但是，在这里，连接器件(4)具有包括至少三层的交替结构，其中从衬底(2)看去，层序列从第一导电层(40)开始，然后是第一绝缘层(44)，然后又是导电层(42)。在这里，连接器件(4)在整个电路布置上延伸并超出第一密封区域(200)，参见图6。
根据本发明，衬底(2)具有只围绕电路布置沿周边形成的密封区域(200)，所述密封区域在这里布置到类似于导体迹线(22)形成的金属层(24)上。按照根据本发明用于制造这种类型的功率半导体模块的方法，烧结金属层(60)布置到第一区域(200)(在这里是金属密封区域(200))上，所述烧结金属层连接到第二密封区域(400)，在压力烧结方法中，该第二密封区域(400)在这里布置到连接器件(4)的第一导电层(40)上。为了形成这些烧结连接，优选地当然是提供具有贵金属涂层的对应连接伴，也就是说第一密封区域(200)和第二密封区域(400)。特别优选的是在一个工作步骤中同时形成多个烧结连接，也就是说两个密封区域(200、400)的烧结连接及功率半导体部件(3)的烧结连接，即到指定导体迹线(22)和到连接器件(4)的第一金属层(40)的连接。
该图还示出了凝胶状的绝缘材料(6)围绕相应的功率半导体部件(3)沿周边布置，其远至第一密封区域(200)是有利的。所述绝缘材料不仅在功率半导体部件(3)的外边缘(30)封住了该功率半导体部件(3)，而且覆盖了所述部件的主要区域，该部件在所述主要区域的边缘(38)处远离衬底。
图4以侧视图的形式示出了根据本发明的功率半导体模块的第二配置的一部分。功率半导体部件(3)的实施方式及连接器件(4)的构造基本上与关于图3所述的相同。但是，在这里，为了例如连接到用于外部负载和辅助端子的端子元件，连接器件在远离功率半导体部件(3)的一侧至少部分地进一步从第一密封区域(200)突出。
但是，在这里，就象第一密封区域(200)一样，衬底(2)没有金属层，而是仅仅具有完全封住电路布置的衬底(2)的基体(20)的凹陷区域，也就是说在DCB衬底的情况下陶瓷上的区域。
在这里，烧结金属可以再次用作连接层(60)，但是，在这种情况下，贵金属涂层将必须沉积到相应的密封区域(200、400)上。可选地和优选地，预浸料坯在这里用作连接层(60)，所述预浸料坯以框架状方式围绕电路布置来布置，并因此完全封住了电路布置(参见图6)。在功率半导体部件(3)烧结连接的环境下，在这里，预浸料坯(60)到第一密封区域(200)和第二密封区域(400)的连接也被同时创建，其中第二密封区域(400)在这里再次是连接器件(4)的第一导电层(40)的部分区域。
图5以侧视图的形式示出了根据本发明的功率半导体模块的第三配置的一部分。该配置与根据图4的第二配置的区别在于第二密封区域(400)是连接器件(4)的第一绝缘层(44)的部分区域。在这里，将连接层(60)实施为预浸料坯是有利的。
图6示出了根据本发明的功率半导体模块的衬底(2)的平面图。在这里，该图示出了具有电路布置的衬底(2)，该电路布置包括三个导体迹线(22)和布置在所述导体迹线中的两个上的功率半导体部件(3)。该图同样示意性地示出了连接层(4)，该连接层(4)与衬底(2)上的周边第一密封区域(200)和连接器件(4)上的第二密封区域(400)叠合。
功率半导体部件(3)相互之间或者到另一个导体迹线(22)的电路匹配连接是由连接器件(4)实现的，只示出了其轮廓。根据本发明，很显然在这里所述器件在整个电路布置和第一密封区域(200)上突出，以便相对于周围影响实现电路布置的紧密密封。
图7示出了根据本发明的功率半导体模块的第一连接器件(4)的一部分。在这里，该图示出了从中断的(422)第二导电层(42)通过绝缘层(44)中的切断(442)到第一导电层(40)的穿通接触连接(404)。在这里将其实施为引线接合连接(404)。该图同样示出了第一导电层(40)的中断(402)，例如为了制造用于功率半导体部件的发射极端子和栅极端子的两个相互绝缘的连接迹线，参见图3至5。
为了密封电路布置，可能需要不仅将外周的第一和第二密封区域彼此连接，而且还要在导电层(40、42)的开口(402、422)之间提供距离(x)。因此特别有利的是，这种类型的两个开口(402、422)彼此之间存在距离(x)，该距离(x)包括布置在导电层(40、42)之间的绝缘层(44)厚度(d)的至少十倍。
图8示出了根据本发明的功率半导体模块的第二连接器件(4)的一部分。在这里，该图示出了包括三个导电层(40、42、46)和分别布置在其间的两个绝缘层(44、48)的连接器件。第一和第二导电层(40、42)具有用于电路匹配连接的电镀通孔(406)，而第三导电层(46)没有中断并可以用于例如掩蔽电路布置。
这种连接器件的每个单独的层，但特别是第三个、未中断的导电层(46)，适于在其上面布置第二密封区域(400)。

Claims (10)

1、一种功率半导体模块，包括：衬底(2)；在所述衬底上形成的电路布置，所述电路布置包括多个导体迹线(22)，所述导体迹线是彼此电绝缘的；并且包括布置在所述导体迹线上的功率半导体部件(3)，所述功率半导体部件(3)通过连接器件(4)以电路匹配的方式连接，所述连接器件(4)包括至少两个导电层(40、42、46)和至少一个电绝缘层(44、48)的交替层序列，
其中衬底(2)具有第一密封区域(200)，该区域没有任何中断地封住了所述电路布置，而且该密封区域(200)通过连接层(60)连接到连接器件(4)的一层上的指定的第二密封区域(400)。
2、如权利要求1所述的功率半导体模块，其中第一密封区域(200)布置在金属层(24)上，并且通过压力烧结连接和作为连接层(60)的烧结金属层紧密密封地连接到连接器件(4)的导电层(40、42、46)。
3、如权利要求1所述的功率半导体模块，其中第一密封区域(200)在金属层上形成或者作为衬底(2)的绝缘区域，并且通过压力烧结连接和作为连接层(60)的预浸料坯紧密地密封连接到第二密封区域(400)。
4、如权利要求1所述的功率半导体模块，其中第二密封区域(400)在连接器件(4)的导电层(40、42、46)上或者绝缘层(44、48)上形成。
5、如权利要求1所述的功率半导体模块，其中凝胶状的绝缘材料(6)围绕相应的功率半导体部件(3)沿周边布置。
6、用于制造权利要求1所述功率半导体模块的方法，其特征在于以下基本步骤：
●将功率半导体部件(3)布置在衬底(2)的指定的导体迹线(22)上；
●在第一密封区域(200)上布置连接层(60)；
●相对于功率半导体部件(3)、相对于第一密封区域(200)并相对于衬底(2)的导体迹线(22)布置连接器件(4)；
●向衬底(2)、向功率半导体部件(3)并向连接器件(4)施加压力。
7、如权利要求6所述的制造方法，其中，在布置功率半导体部件(3)之后，凝胶状的绝缘材料(6)围绕它们(30)并以覆盖远离衬底(2)的主要区域的边缘(38)的方式布置。
8、如权利要求6所述的制造方法，其中相应的功率半导体部件(3)到指定的导体迹线(22)和连接器件(4)的金属层(40、42、46)的连接是作为烧结连接形成的。
9、如权利要求6所述的制造方法，其中连接层(60)是烧结金属层，并且其到第一密封区域(200)的以金属方式形成的粘性连接和到连接器件(4)的金属层(40、42、46)上的指定的第二密封区域(400)的粘性连接是与功率半导体部件(3)到导体迹线(22)和连接器件(4)的第一金属层(40)的烧结连接同时形成的。
10、如权利要求6所述的制造方法，其中连接层(60)是预浸料坯，而且其到第一密封区域(200)和连接器件(4)的指定的第二密封区域(400)的粘性连接是与功率半导体部件(3)到导体迹线(22)和连接器件(4)的第一金属层(40)的烧结连接同时形成的。
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