CN101548362B - 具有受控的双轴应力的超低介电常数层 - Google Patents

具有受控的双轴应力的超低介电常数层 Download PDF

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CN101548362B
CN101548362B CN2006800022767A CN200680002276A CN101548362B CN 101548362 B CN101548362 B CN 101548362B CN 2006800022767 A CN2006800022767 A CN 2006800022767A CN 200680002276 A CN200680002276 A CN 200680002276A CN 101548362 B CN101548362 B CN 101548362B
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film
dielectric
controlled
oxygen
biaxial stress
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Expired - Fee Related
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Chinese (zh)
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CN101548362A (zh
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C·D·迪米特罗普洛斯
S·M·盖茨
A·格里尔
M·W·莱恩
E·G·利宁格
刘小虎
S·V·恩古源
D·A·诺伊迈尔
T·M·肖
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
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    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H10W20/00—Interconnections in chips, wafers or substrates
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y10T428/249979—Specified thickness of void-containing component [absolute or relative] or numerical cell dimension

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2006800022767A 2005-01-13 2006-01-12 具有受控的双轴应力的超低介电常数层 Expired - Fee Related CN101548362B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/034,479 2005-01-13
US11/034,479 US7357977B2 (en) 2005-01-13 2005-01-13 Ultralow dielectric constant layer with controlled biaxial stress
PCT/US2006/001154 WO2007089223A2 (en) 2005-01-13 2006-01-12 Ultralow dielectric constant layer with controlled biaxial stress

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CN101548362A CN101548362A (zh) 2009-09-30
CN101548362B true CN101548362B (zh) 2012-10-03

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US (3) US7357977B2 (https=)
EP (1) EP1854131A4 (https=)
JP (1) JP5065054B2 (https=)
CN (1) CN101548362B (https=)
TW (1) TW200636859A (https=)
WO (1) WO2007089223A2 (https=)

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US20070176292A1 (en) * 2006-01-27 2007-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
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JP2008103586A (ja) * 2006-10-20 2008-05-01 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US8053375B1 (en) * 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
JP5140290B2 (ja) * 2007-03-02 2013-02-06 富士フイルム株式会社 絶縁膜
JP5304033B2 (ja) * 2007-08-31 2013-10-02 富士通株式会社 半導体装置の製造方法
US8338315B2 (en) * 2008-02-26 2012-12-25 Axcelis Technologies, Inc. Processes for curing silicon based low-k dielectric materials
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KR101350020B1 (ko) * 2008-12-08 2014-01-13 후지쯔 가부시끼가이샤 반도체 장치의 제조방법
WO2014158448A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc. Enhancing uv compatibility of low k barrier film
CN103531463A (zh) * 2013-10-30 2014-01-22 苏州大学 低表面孔隙低介电常数薄膜材料的制备方法
CN104900580B (zh) * 2014-03-04 2018-05-01 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
EP3367425A1 (en) * 2017-02-28 2018-08-29 IMEC vzw A method for direct bonding of semiconductor substrates
US11038153B2 (en) * 2019-01-15 2021-06-15 Applied Materials, Inc. Methods for HMDSO thermal stability
US11114606B2 (en) * 2019-09-23 2021-09-07 International Business Machines Corporation MRAM devices containing a harden gap fill dielectric material
US11621162B2 (en) * 2020-10-05 2023-04-04 Applied Materials, Inc. Systems and methods for forming UV-cured low-κ dielectric films
WO2022140346A1 (en) * 2020-12-27 2022-06-30 Applied Materials, Inc. Single precursor low-k film deposition and uv cure for advanced technology node

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JP2008527757A (ja) 2008-07-24
US20090304951A1 (en) 2009-12-10
JP5065054B2 (ja) 2012-10-31
TW200636859A (en) 2006-10-16
CN101548362A (zh) 2009-09-30
US20080286494A1 (en) 2008-11-20
WO2007089223A3 (en) 2007-11-01
US20080044668A1 (en) 2008-02-21
EP1854131A4 (en) 2011-03-30
EP1854131A2 (en) 2007-11-14
WO2007089223A2 (en) 2007-08-09
US7357977B2 (en) 2008-04-15

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