CN101536175B - 包括引发不同类型应变的隔离沟槽的半导体器件 - Google Patents
包括引发不同类型应变的隔离沟槽的半导体器件 Download PDFInfo
- Publication number
- CN101536175B CN101536175B CN200780040260XA CN200780040260A CN101536175B CN 101536175 B CN101536175 B CN 101536175B CN 200780040260X A CN200780040260X A CN 200780040260XA CN 200780040260 A CN200780040260 A CN 200780040260A CN 101536175 B CN101536175 B CN 101536175B
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- isolated groove
- strain
- groove
- stress
- transistor
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- 238000002955 isolation Methods 0.000 title abstract description 59
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000011049 filling Methods 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7846—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the lateral device isolation region, e.g. STI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Abstract
Description
Claims (3)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006046377.3 | 2006-09-29 | ||
DE102006046377A DE102006046377A1 (de) | 2006-09-29 | 2006-09-29 | Halbleiterbauelement mit Isoliergräben, die unterschiedliche Arten an Verformung hervorrufen |
US11/734,320 | 2007-04-12 | ||
US11/734,320 US7547610B2 (en) | 2006-09-29 | 2007-04-12 | Method of making a semiconductor device comprising isolation trenches inducing different types of strain |
PCT/US2007/020598 WO2008042144A2 (en) | 2006-09-29 | 2007-09-24 | A semiconductor device comprising isolation trenches inducing different types of strain |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101536175A CN101536175A (zh) | 2009-09-16 |
CN101536175B true CN101536175B (zh) | 2011-04-13 |
Family
ID=39134352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780040260XA Expired - Fee Related CN101536175B (zh) | 2006-09-29 | 2007-09-24 | 包括引发不同类型应变的隔离沟槽的半导体器件 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7547610B2 (zh) |
JP (1) | JP2010505269A (zh) |
KR (1) | KR20090060355A (zh) |
CN (1) | CN101536175B (zh) |
DE (1) | DE102006046377A1 (zh) |
GB (1) | GB2456094A (zh) |
TW (1) | TW200828497A (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8013372B2 (en) * | 2008-04-04 | 2011-09-06 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit including a stressed dielectric layer with stable stress |
DE102009035409B4 (de) * | 2009-07-31 | 2013-06-06 | Globalfoundries Dresden Module One Llc & Co. Kg | Leckstromsteuerung in Feldeffekttransistoren auf der Grundlage einer Implantationssorte, die lokal an der STI-Kante eingeführt wird |
US8610240B2 (en) * | 2009-10-16 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit with multi recessed shallow trench isolation |
US8198170B2 (en) * | 2010-10-15 | 2012-06-12 | GlobalFoundries, Inc. | Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor material |
US8853051B2 (en) | 2012-04-12 | 2014-10-07 | Globalfoundries Inc. | Methods of recessing an active region and STI structures in a common etch process |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
US20150295033A1 (en) * | 2012-11-30 | 2015-10-15 | Ps5 Luxco S.A.R.L. | Apparatus and method for manufacturing same |
US9640456B2 (en) | 2013-03-15 | 2017-05-02 | Taiwan Semiconductor Manufacturing Company Limited | Support structure for integrated circuitry |
CN104637860B (zh) * | 2013-11-08 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构及其制备方法 |
KR102181605B1 (ko) * | 2013-12-23 | 2020-11-24 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
FR3018139B1 (fr) * | 2014-02-28 | 2018-04-27 | Stmicroelectronics (Rousset) Sas | Circuit integre a composants, par exemple transistors nmos, a regions actives a contraintes en compression relachees |
US10032683B2 (en) | 2015-06-16 | 2018-07-24 | International Business Machines Corporation | Time temperature monitoring system |
JP2021015868A (ja) | 2019-07-11 | 2021-02-12 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
CN111933571B (zh) * | 2020-10-10 | 2021-02-19 | 晶芯成(北京)科技有限公司 | 一种半导体结构及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6657276B1 (en) * | 2001-12-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Shallow trench isolation (STI) region with high-K liner and method of formation |
CN1507032A (zh) * | 2002-12-12 | 2004-06-23 | 国际商业机器公司 | 用于施加应力图形的隔离结构 |
CN1540757A (zh) * | 2003-04-25 | 2004-10-27 | ̨������·����ɷ�����˾ | 具应变通道的互补式金氧半导体及其制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4745081A (en) * | 1985-10-31 | 1988-05-17 | International Business Machines Corporation | Method of trench filling |
US5130268A (en) * | 1991-04-05 | 1992-07-14 | Sgs-Thomson Microelectronics, Inc. | Method for forming planarized shallow trench isolation in an integrated circuit and a structure formed thereby |
KR100378190B1 (ko) * | 2000-12-28 | 2003-03-29 | 삼성전자주식회사 | 서로 다른 두께의 측벽 산화막을 갖는 트랜치아이솔레이션 형성방법 |
FR2830984B1 (fr) | 2001-10-17 | 2005-02-25 | St Microelectronics Sa | Tranchee d'isolement et procede de realisation |
KR100443126B1 (ko) * | 2002-08-19 | 2004-08-04 | 삼성전자주식회사 | 트렌치 구조물 및 이의 형성 방법 |
US6828211B2 (en) | 2002-10-01 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
US7119404B2 (en) | 2004-05-19 | 2006-10-10 | Taiwan Semiconductor Manufacturing Co. Ltd. | High performance strained channel MOSFETs by coupled stress effects |
US7354806B2 (en) | 2004-09-17 | 2008-04-08 | International Business Machines Corporation | Semiconductor device structure with active regions having different surface directions and methods |
US7276406B2 (en) | 2004-10-29 | 2007-10-02 | Freescale Semiconductor, Inc. | Transistor structure with dual trench for optimized stress effect and method therefor |
JP4643223B2 (ja) * | 2004-10-29 | 2011-03-02 | 株式会社東芝 | 半導体装置 |
JP2006202875A (ja) * | 2005-01-19 | 2006-08-03 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP4561419B2 (ja) * | 2005-03-16 | 2010-10-13 | ソニー株式会社 | 半導体装置の製造方法 |
US7691722B2 (en) * | 2006-03-14 | 2010-04-06 | Micron Technology, Inc. | Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability |
-
2006
- 2006-09-29 DE DE102006046377A patent/DE102006046377A1/de not_active Ceased
-
2007
- 2007-04-12 US US11/734,320 patent/US7547610B2/en not_active Expired - Fee Related
- 2007-09-24 KR KR1020097008248A patent/KR20090060355A/ko not_active Application Discontinuation
- 2007-09-24 GB GB0906452A patent/GB2456094A/en not_active Withdrawn
- 2007-09-24 CN CN200780040260XA patent/CN101536175B/zh not_active Expired - Fee Related
- 2007-09-24 JP JP2009530385A patent/JP2010505269A/ja active Pending
- 2007-09-27 TW TW096135866A patent/TW200828497A/zh unknown
-
2009
- 2009-04-07 US US12/419,500 patent/US8138571B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6657276B1 (en) * | 2001-12-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Shallow trench isolation (STI) region with high-K liner and method of formation |
CN1507032A (zh) * | 2002-12-12 | 2004-06-23 | 国际商业机器公司 | 用于施加应力图形的隔离结构 |
CN1540757A (zh) * | 2003-04-25 | 2004-10-27 | ̨������·����ɷ�����˾ | 具应变通道的互补式金氧半导体及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
GB0906452D0 (en) | 2009-05-20 |
TW200828497A (en) | 2008-07-01 |
KR20090060355A (ko) | 2009-06-11 |
US20080079085A1 (en) | 2008-04-03 |
US8138571B2 (en) | 2012-03-20 |
US7547610B2 (en) | 2009-06-16 |
JP2010505269A (ja) | 2010-02-18 |
DE102006046377A1 (de) | 2008-04-03 |
US20090236667A1 (en) | 2009-09-24 |
CN101536175A (zh) | 2009-09-16 |
GB2456094A (en) | 2009-07-08 |
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