CN101529588B - 功率模块用基板以及功率模块用基板的制造方法、及功率模块 - Google Patents
功率模块用基板以及功率模块用基板的制造方法、及功率模块 Download PDFInfo
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Abstract
本发明提供一种使接合可靠性提高的功率模块。在该功率模块(10)中,在功率模块用基板(14)中,在陶瓷板(11)中在其表面上硬钎焊有电路层(12),并且在其背面上硬钎焊有金属层(13),在所述电路层(12)上软钎焊有半导体芯片(16),其中,金属层(13)通过整体的平均纯度为98.0wt%以上且99.9wt%以下的Al合金形成,并且使与陶瓷板(11)硬钎焊的面(13a)侧包含的Fe的浓度不足0.1wt%,并且使与该硬钎焊面(13a)相反的表面(13b)侧包含的Fe的浓度为0.1wt%以上。
Description
技术领域
本发明涉及在对大电流、高电压进行控制的半导体装置中使用的功率模块用基板以及功率模块用基板的制造方法、及功率模块。
本申请基于2006年10月27日在日本申请的日本专利申请2006-292006号主张优先权,并在此处援引其内容。
背景技术
此种功率模块一般具备:在陶瓷板中在其表面上硬钎焊有电路层,并且在背面上硬钎焊有金属层的功率模块用基板;软钎焊在电路层上的半导体芯片;以及与金属层接合的散热器。
而且,以往为了提高功率模块的接合可靠性,例如如下述专利文献1所示,通过纯度为99.98wt%以上的Al合金或者纯Al形成电路层或者金属层。
专利文献1:再公表WO03/090277号公报
但是,近年来,要求进一步提高功率模块的接合可靠性。
发明内容
本发明是考虑到这种情况而提出的,其目的在于提供一种能够使功率模块的接合可靠性提高的功率模块用基板以及功率模块用基板的制造方法、及功率模块。
为了解决这样的课题,实现所述目的,本发明提供一种功率模块用基板,在陶瓷板中,在其表面上硬钎焊有电路层,并且在其背面上硬钎焊有金属层,在所述电路层上软钎焊有半导体芯片,其中,所述金属层通过整体的平均纯度为98.0wt%以上且99.9wt%以下的Al合金形成,并且,使与所述陶瓷板硬钎焊的面侧所含的Fe的浓度不足0.1wt%,并且,使与该硬钎焊面相反的表面侧所含的Fe的浓度为0.1wt%以上。
根据本发明,在金属层中,因为使硬钎焊面侧所含的Fe的浓度不足0.1wt%,所以即使在热循环时,在由于陶瓷板以及金属层的各膨胀系数之差而在这些的接合界面上产生应力的情况下,通过使金属层的硬 钎焊面侧塑性变形,从而能够吸收该应力。由此,能够抑制作用在接合界面上的应力,提高陶瓷板和金属层的接合可靠性。
另一方面,在金属层中,由于使所述相反的表面侧所含的Fe的浓度为0.1wt%以上,所以,在热循环时伴随着金属层反复进行热变形,能够逐渐使该相反的表面侧硬化,能够抑制该部分的塑性变形。由此,在热循环时,即使在金属层的所述相反的表面和散热器的接合部产生龟裂,也能够抑制其进展,能够提高功率模块的接合可靠性。
这里,所述硬钎焊面侧,表示在金属层中通过使用电子探针微量分析器(EPMA)装置特定的边界而划分的两个区域中的、在金属层中包含的Fe浓度减少的区域,所述相反的表面侧表示另一方的残留区域。此外,也可以使所述硬钎焊面侧为:从该硬钎焊面朝向所述相反的表面,位于从金属层的厚度的10%以上到50%以下的部分,使残留部分为所述相反的表面侧。
在该情况下,能够确实地获得所述作用效果。
此外,在本发明的功率模块用基板的制造方法中,在陶瓷板中在其表面上硬钎焊电路层,并且在其背面上硬钎焊金属层,在电路层上软钎焊半导体芯片,其中,将Al类的硬钎焊材料箔、和含有0.05wt%以上且1.0wt%以下的Fe的纯度为98.5wt%以上且99.95wt%以下的Al合金构成的金属层构件依次配置在陶瓷板的背面上而作为层叠体,之后,在对该层叠体在层叠方向上加压的状态下进行加热,使硬钎焊材料箔熔融,使金属层构件硬钎焊到陶瓷板的背面上,由此形成本发明的功率模块用基板。
在本发明中,因为在层叠方向上对所述层叠体进行加压并进行硬钎焊,所以能够对陶瓷板的背面和金属层构件良好地进行硬钎焊,能够在金属层构件中,使陶瓷板和硬钎焊面侧中包含的Fe在所述结合界面熔融的硬钎焊材料中良好地溶解。因此,能够确实地形成在金属层的硬钎焊面侧中包含的Fe的浓度为不足0.1wt%、并且在与该硬钎焊面相反的表面侧中包含的Fe的浓度为0.1wt%以上的功率模块用基板。
进而,本发明的功率模块具备:在陶瓷板中在其表面上硬钎焊有电路层,并且在背面上硬钎焊有金属层的功率模块用基板;软钎焊到所述电路层的表面的半导体芯片;以及与金属层的表面接合的散热器,其中,所述功率模块用基板是本发明的功率模块用基板。
在该情况下,能够实现提高了接合可靠性的功率模块。
发明的效果
根据本发明,能够使功率模块的接合可靠性提高。
附图说明
图1是表示应用了本发明的一个实施方式的功率模块用基板的功率模块的整体图。
图2是表示图1所示的金属层的厚度方向的Fe浓度分布的一例的图。
附图标记说明
10功率模块
11陶瓷板
12电路层
13金属层
13a硬钎焊面
13b相反的表面
14功率模块用基板
15第一软钎焊层
16半导体芯片
17散热器
18第二软钎焊层
具体实施方式
以下参照附图,详细地对本发明的实施方式进行说明。图1是表示应用了本发明的一个实施方式的功率模块用基板的功率模块的整体图。
该功率模块10具备:功率模块用基板14,在陶瓷板上11中在其表面上硬钎焊有电路层12,并且在其背面上硬钎焊有金属层13;半导体芯片16,通过第一软钎焊层15软钎焊在所述电路层12的表面上;以及散热器17,通过第二软钎焊层18软钎焊在所述金属层13的表面上。
这里,作为形成该各构件的材料,例如,在陶瓷板11中能够举出AlN、Al2O3、Si3N4、SiC等,在电路层12中能够举出纯Al或者Al合 金,在散热器17中能够举出纯Al、纯Cu、Al合金或者Cu合金等,在第二软钎焊层18中能够举出例如无铅类的软钎焊材料。此外,在对陶瓷板11和电路层12以及金属层13进行硬钎焊的硬钎焊材料中,能够举出例如Al-Si类等的Al类的硬钎焊材料。在本实施方式中,设定为是含有11.6wt%以下的Si、并且比在形成金属层13的后述金属层构件中包含的Si的浓度高的Al-Si类的硬钎焊材料。
并且,在本实施方式中,金属层13由整体的平均纯度为98.0wt%以上且99.9wt%以下的Al合金形成,并且,使与陶瓷板11硬钎焊的面13a侧所含的Fe的浓度不足0.1wt%,并且,使与该硬钎焊面13a相反的表面13b侧所含的Fe的浓度为0.1wt%以上。此外,使硬钎焊面13a侧为在金属层13中从该硬钎焊面13a朝向所述相反的表面13b,位于金属层13的厚度的10%以上且50%以下的部分,使残留部为所述相反的表面13b侧。
这里,在金属层13中,所述硬钎焊面13a侧、和所述相反的表面13b侧的特定是通过如下方式进行,即在切断金属层13而获得的剖面中,使用电子探针微量分析器(EPMA)装置,从所述相反的表面13b朝向所述硬钎焊面13a,在加速电压15kV、电流值5×10-8A、光斑尺寸1μm、一点测定时间5秒、移动间隔1μm的条件下进行EPMA的线分析,根据得到的数据,特定作为Fe的浓度是0.1wt%以上的区域、和不足0.1wt%的区域的边界。
并且,分别针对以上述方式而特定的所述硬钎焊面13a侧以及所述相反的表面13b侧,在EPMA装置中,使加速电压为15kV,并且,使电流值为5×10-8A,将光斑尺寸设定为30μm,在所述剖面的任意的10处进行测定,算出所得到的测定值的平均值,由此,求出所述硬钎焊面13a侧以及所述相反的表面13b侧分别所含的Fe的浓度。
此外,关于金属层13整体的平均纯度,首先,将金属层13浸在分别以相同量混入有水、氢氟酸以及硝酸的水浴中(约100℃)并使其分解,然后,通过使用ICP-AES法(感应耦合等离子体原子发射光谱法)测定该分解后的试样。
然后,对以如上方式构成的功率模块用基板14的制造方法进行说明。
首先,形成与金属层13相同形状相同大小的金属层构件。这里, 金属层构件由其整体的平均为含有0.05wt%以上且1.0wt%以下的Fe的、纯度为98.5wt%以上且99.95wt%以下的Al合金构成。然后,在陶瓷板11的背面,依次配置硬钎焊材料箔和金属层构件。此外,在陶瓷板11的表面隔着硬钎焊材料箔配置与电路层12相同形状相同大小的电路层构件。
由此,在陶瓷板11中,形成了在其表面上依次配置硬钎焊材料箔和电路层构件、在其背面上依次配置所述硬钎焊材料箔和金属层构件的层叠体。
并且,将该层叠体置于非活性气氛、还原性气氛、或者真空中(真空度1×10-5Torr(1.33×10-3Pa)以下),在层叠方向上以0.098MPa~0.294MPa进行加压的状态下,以577℃以上且660℃以下进行加热,使硬钎焊材料箔熔融,由此,利用硬钎焊将电路层构件接合在陶瓷板11的表面上,形成电路层12,通过硬钎焊接合陶瓷板11的背面和金属层构件从而形成金属层13,形成功率模块用基板14。
如以上所说明的那样,根据本实施方式的功率模块用基板,因为在金属层13中,使在硬钎焊面13a侧包含的Fe的浓度为不足0.1wt%,所以在热循环时,即使在由于陶瓷板11和金属层13的各膨胀系数的差,在它们的接合界面上发生应力的情况下,通过使金属层13的硬钎焊面13a侧塑性变形,从而能够吸收该应力。由此,能够抑制作用到所述接合界面的应力,能够使陶瓷板11和金属层13的接合可靠性提高。
另一方面,因为在金属层13中,使所述相反的表面13b侧包含的Fe的浓度为0.1wt%以上,所以在热循环时伴随着金属层13反复热变形,能够使该相反的表面13b侧渐渐地硬化,能够抑制该部分塑性变形。由此,在热循环时,即使在接合金属层13的所述相反的表面13b和散热器17的第二软钎焊层18上发生龟裂,也能够抑制其进展,能够使功率模块10的接合可靠性提高。
此外,在对金属层构件和陶瓷板11进行硬钎焊时,因为在层叠方向上对所述层叠体进行加压,所以能够防止在陶瓷板11的背面和金属层构件的接合界面上形成氧化膜,能够使在金属层构件中在与陶瓷板11的硬钎焊面侧所含的Fe良好地溶解于在所述接合界面熔融的硬钎焊材料中。因此,能够可靠地形成使金属层13的硬钎焊面13a侧所含的Fe的浓度不足0.1wt%、并且使与该硬钎焊面13a相反的表面13b侧所含 的Fe的浓度为0.1wt%以上的功率模块用基板14。
进而,因为接合金属层构件和陶瓷板11的硬钎焊材料箔中包含的Si的浓度,比金属层构件中包含的Si的浓度高,同时因为硬钎焊时的加热,金属层构件中的Si的极限固溶量的增大,从而能够使熔融的硬钎焊材料中包含的Si从硬钎焊面侧向金属层构件的内部扩散,在金属层构件中,能够使硬钎焊面侧包含的Si的浓度比所述相反的表面侧高。由此,硬钎焊面侧的Fe的极限固溶量变得比所述相反的表面侧小,因此能够使硬钎焊面侧包含的Fe的浓度比所述相反的表面侧低。因此,如上所述,能够使在金属层构件中在与陶瓷板11硬钎焊的面侧中包含的Fe良好地溶解到在所述接合界面熔融的硬钎焊材料中,由此,能够更确实地形成提高了接合可靠性的所述功率模块用基板14。
再有,本发明的技术范围并不被限定于所述实施方式,在不脱离本发明的宗旨的范围中能够施加各种变更。
例如,金属层构件或电路层构件也可以通过冲压母材而形成,或通过所谓的蚀刻法形成。
接着,对本制造方法的具体实施例进行说明。
首先,关于材料,通过含有大约0.3wt%的Fe的纯度为99.5wt%的Al合金形成金属层构件和电路层构件,通过Al-Si类(Al是92.5wt%、Si是7.5wt%)形成对金属层13、电路层12、和陶瓷板11进行接合的硬钎焊材料,通过AlN形成陶瓷板11。关于厚度,使金属层13和电路层12分别为大约0.6mm,使硬钎焊材料箔为大约30μm,使陶瓷板11为大约0.635mm。再有,将金属层13设为俯视观察的四角形,纵和宽的尺寸分别为大约30mm。
并且,将所述层叠体置于600℃~650℃的真空中(真空度为1×10 -5Torr(1.33×10-3Pa)以下),在层叠方向上以0.098MPa~0.294MPa加压约一小时,形成功率模块用基板14。
对该功率模块用基板14的金属层13,使用电子探针微量分析器(EPMA),判定硬钎焊面13a侧的区域与所述相反的表面13b侧的区域。具体地说,在切断金属层13而得到的剖面中,从所述相反的表面13b朝向硬钎焊面13a,在加速电压15kV、电流值5×10-8A、光斑尺寸1μm、一点测定时间5秒、移动间隔1μm的条件下,进行EPMA的线分析。图2示出其结果。
根据该图,在金属层13中从硬钎焊面13a朝向所述相反的表面13b,位于金属层13的厚度的约33%的部分中,确认了Fe的浓度不足0.1wt%并变低,与其相比在所述相反的表面13b侧,Fe的浓度为0.1wt%以上并变高。
然后,对关于以上说明的作用效果的验证试验进行实施。
在形成金属层的金属层构件中,使Al的纯度、厚度及Fe的浓度的至少一个不同而形成8种功率模块用基板,在各功率模块用基板的金属层中,使硬钎焊面侧包含的Fe的浓度、所述相反的表面侧包含的Fe的浓度、硬钎焊面侧的厚度、以及所述相反的表面侧的厚度的至少一个不同。然后,将分别在这些功率模块用基板的金属层的表面上,以Sn-Ag-Cu-Ni-Ge类的无铅焊料软钎焊了具有相同的性能的纯Cu构成的散热器的物体,在大约三分钟期间从-40℃升温到105℃之后,在10分钟期间从105℃降温到-40℃的温度履历作为一个热循环,赋予2000个循环。
然后,使用超声波影像装置(15MHz探头)对陶瓷板以及金属层的接合界面进行摄像,根据对该摄像数据进行二值化而得到的剥离部分的在接合界面整体中所占的面积,算出剥离面积率。
同样地,使用超声波影像装置(15MHz探头)对金属层以及散热器的软钎焊的接合界面进行摄像,根据对该摄像数据进行二值化而得到的软钎焊裂隙进展区域的在接合界面整体中所占的面积算出软钎焊裂隙进展区域面积率。这里,在剥离面积率以及软钎焊裂隙进展区域面积率的各评价中,以超过20%的为×,大于10%且小于等于20%的为○,10%以下的为◎的方式进行评价。
表1中示出结果。
[表1]
其结果是,金属层13通过其整体的平均纯度为98.0wt%以上且99.9wt%以下的Al合金形成,并且,使与陶瓷板11硬钎焊的面13a侧所含的Fe的浓度不足0.1wt%,并且,使该硬钎焊面13a侧的相反的表面13b侧所含的Fe的浓度为0.1wt%以上,由此即使赋予2000循环的所述温度循环,剥离面积率也被抑制在最小限度,能够使该功率模块10的接合可靠性提高。
产业上的可利用性
根据本发明的功率模块用基板以及功率模块用基板的制造方法及功率模块,能够提高功率模块的接合可靠性。
Claims (3)
1.一种功率模块用基板,包括:陶瓷板、在所述陶瓷板的表面上硬钎焊的电路层、以及在所述陶瓷板的背面上硬钎焊的金属层,在所述电路层上软钎焊有半导体芯片,其中,
所述金属层由整体的平均纯度为98.0wt%以上且99.9wt%以下的铝合金形成,并且,所述金属层与所述陶瓷板的硬钎焊面侧所含的Fe的浓度不足0.1wt%,而且所述金属层的与该硬钎焊面相反的表面侧所含的Fe的浓度为0.1wt%以上。
2.如权利要求1所述的功率模块用基板,其中,
使所述硬钎焊面侧为在金属层中从该硬钎焊面朝向所述硬钎焊面的相反的表面,位于金属层的厚度的10%以上且50%以下的部分,使残留部为所述相反的表面侧。
3.一种功率模块,具备:在陶瓷板的表面上硬钎焊有电路层并且在所述陶瓷板的背面上硬钎焊有金属层的功率模块用基板;软钎焊到所述电路层的表面上的半导体芯片;以及与所述金属层的表面接合的散热器,其中,
所述功率模块用基板是权利要求1或者权利要求2所述的功率模块用基板。
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