CN101526738A - 光致抗蚀剂组合物和使用该组合物制造阵列基板的方法 - Google Patents
光致抗蚀剂组合物和使用该组合物制造阵列基板的方法 Download PDFInfo
- Publication number
- CN101526738A CN101526738A CN200910004485A CN200910004485A CN101526738A CN 101526738 A CN101526738 A CN 101526738A CN 200910004485 A CN200910004485 A CN 200910004485A CN 200910004485 A CN200910004485 A CN 200910004485A CN 101526738 A CN101526738 A CN 101526738A
- Authority
- CN
- China
- Prior art keywords
- novolac resin
- corrosion
- photo
- agent composition
- resisting agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Liquid Crystal (AREA)
Abstract
Description
实施例1 | 实施例2 | 实施例3 | 实施例4 | 比较例1 | 比较例2 | |
感光度(mJ/cm2) | 30 | 24 | 40 | 32 | 50 | 32 |
残留比(%) | 93 | 92 | 95 | 94 | 94 | 94 |
半色调梯度 | 0.60 | 0.57 | 0.65 | 0.60 | 0.72 | 0.61 |
粘附性(μm) | 0.8 | 0.9 | 0.7 | 0.6 | 1.25 | 1.15 |
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080020109 | 2008-03-04 | ||
KR10-2008-0020109 | 2008-03-04 | ||
KR1020080020109A KR101430962B1 (ko) | 2008-03-04 | 2008-03-04 | 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101526738A true CN101526738A (zh) | 2009-09-09 |
CN101526738B CN101526738B (zh) | 2013-03-06 |
Family
ID=41054036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100044850A Active CN101526738B (zh) | 2008-03-04 | 2009-03-04 | 光致抗蚀剂组合物和使用该组合物制造阵列基板的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090227058A1 (zh) |
JP (1) | JP5448490B2 (zh) |
KR (1) | KR101430962B1 (zh) |
CN (1) | CN101526738B (zh) |
TW (1) | TWI465842B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103906740A (zh) * | 2011-11-02 | 2014-07-02 | 株式会社东进世美肯 | 酚类单体、含有该酚类单体的用于形成抗蚀剂下层膜的聚合物以及含有该聚合物的用于制备抗蚀剂下层膜的组合物 |
CN107728426A (zh) * | 2016-08-10 | 2018-02-23 | 三星显示有限公司 | 光刻胶组合物以及使用该组合物的金属图案的形成方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013195497A (ja) * | 2012-03-16 | 2013-09-30 | Sumitomo Bakelite Co Ltd | フォトレジスト用樹脂組成物 |
KR102058651B1 (ko) * | 2013-02-27 | 2019-12-24 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 그를 이용한 표시 장치의 제조 방법 |
CN104779258A (zh) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4499171A (en) * | 1982-04-20 | 1985-02-12 | Japan Synthetic Rubber Co., Ltd. | Positive type photosensitive resin composition with at least two o-quinone diazides |
JPS58182632A (ja) * | 1982-04-20 | 1983-10-25 | Japan Synthetic Rubber Co Ltd | ポジ型感光性樹脂組成物 |
EP0136110A3 (en) * | 1983-08-30 | 1986-05-28 | Mitsubishi Kasei Corporation | Positive photosensitive compositions useful as photoresists |
US5281508A (en) * | 1985-08-09 | 1994-01-25 | Tokyo Ohka Kogyo Co., Ltd. | Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol |
JPH0654384B2 (ja) * | 1985-08-09 | 1994-07-20 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
US5753406A (en) * | 1988-10-18 | 1998-05-19 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
KR0184870B1 (ko) * | 1990-02-20 | 1999-04-01 | 아사구라 다기오 | 감방사선성 수지 조성물 |
US5372909A (en) * | 1991-09-24 | 1994-12-13 | Mitsubishi Kasei Corporation | Photosensitive resin composition comprising an alkali-soluble resin made from a phenolic compound and at least 2 different aldehydes |
US5374693A (en) * | 1992-12-29 | 1994-12-20 | Hoechst Celanese Corporation | Novolak resin blends for photoresist applications |
JP3434340B2 (ja) * | 1994-03-29 | 2003-08-04 | 東京応化工業株式会社 | 高感度ポジ型ホトレジスト組成物 |
JP3473931B2 (ja) * | 1996-11-11 | 2003-12-08 | 東京応化工業株式会社 | リフトオフ用ポジ型感光性組成物およびパターン形成方法 |
US6492085B1 (en) * | 1999-08-10 | 2002-12-10 | Tokyo Ohka Kogyo Co., Ltd. | Positive photoresist composition and process and synthesizing polyphenol compound |
JP3901923B2 (ja) * | 2000-09-12 | 2007-04-04 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
US6733949B2 (en) * | 2002-04-11 | 2004-05-11 | Clariant Finance (Bvi) Limited | Novolak resin mixtures and photosensitive compositions comprising the same |
JP4101670B2 (ja) * | 2003-01-31 | 2008-06-18 | 東京応化工業株式会社 | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
US7220611B2 (en) * | 2003-10-14 | 2007-05-22 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display panel and fabricating method thereof |
JP2005338258A (ja) * | 2004-05-25 | 2005-12-08 | Fuji Photo Film Co Ltd | 感光性転写材料、カラーフィルター基板及び液晶表示装置 |
JP4611690B2 (ja) * | 2004-09-03 | 2011-01-12 | 東京応化工業株式会社 | レジストパターンの形成方法ならびにこれを用いた微細パターンの形成方法および液晶表示素子の製造方法 |
CN101073035B (zh) * | 2004-12-09 | 2012-11-28 | 可隆株式会社 | 正型干膜光致抗蚀剂 |
KR20060090519A (ko) * | 2005-02-07 | 2006-08-11 | 삼성전자주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한층상 부재 형성 방법 및 박막 트랜지스터 표시판의 제조방법 |
KR101240643B1 (ko) * | 2005-07-08 | 2013-03-08 | 삼성디스플레이 주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 |
JP4640037B2 (ja) * | 2005-08-22 | 2011-03-02 | Jsr株式会社 | ポジ型感光性絶縁樹脂組成物およびその硬化物 |
-
2008
- 2008-03-04 KR KR1020080020109A patent/KR101430962B1/ko active IP Right Grant
- 2008-12-31 US US12/347,202 patent/US20090227058A1/en not_active Abandoned
-
2009
- 2009-02-13 JP JP2009031082A patent/JP5448490B2/ja not_active Expired - Fee Related
- 2009-02-19 TW TW098105264A patent/TWI465842B/zh active
- 2009-03-04 CN CN2009100044850A patent/CN101526738B/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103906740A (zh) * | 2011-11-02 | 2014-07-02 | 株式会社东进世美肯 | 酚类单体、含有该酚类单体的用于形成抗蚀剂下层膜的聚合物以及含有该聚合物的用于制备抗蚀剂下层膜的组合物 |
CN103906740B (zh) * | 2011-11-02 | 2016-08-24 | 株式会社东进世美肯 | 酚类单体、含有该酚类单体的用于形成抗蚀剂下层膜的聚合物以及含有该聚合物的用于制备抗蚀剂下层膜的组合物 |
CN107728426A (zh) * | 2016-08-10 | 2018-02-23 | 三星显示有限公司 | 光刻胶组合物以及使用该组合物的金属图案的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090227058A1 (en) | 2009-09-10 |
TW200944939A (en) | 2009-11-01 |
JP5448490B2 (ja) | 2014-03-19 |
TWI465842B (zh) | 2014-12-21 |
CN101526738B (zh) | 2013-03-06 |
KR20090095040A (ko) | 2009-09-09 |
JP2009211065A (ja) | 2009-09-17 |
KR101430962B1 (ko) | 2014-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101526738B (zh) | 光致抗蚀剂组合物和使用该组合物制造阵列基板的方法 | |
US20110294243A1 (en) | Photoresist composition and method of forming photoresist pattern using the same | |
US20150301452A1 (en) | Photoresist composition and method of fabricating display substrate using the same | |
JP2006221170A (ja) | 感光性樹脂組成物、該感光性樹脂組成物で形成された薄膜を含む薄膜表示板及びその製造方法 | |
US20110269309A1 (en) | Photoresist composition, method of forming pattern by using the photoresist composition, and method of manufacturing thin-film transistor substrate | |
US8354220B2 (en) | Resist ink and method of forming pattern using the same | |
US7981706B2 (en) | Photoresist composition and method of manufacturing a display substrate using the same | |
KR101632965B1 (ko) | 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법 | |
US20070259272A1 (en) | Photoresist composition and method of manufacturing a thin-film transistor substrate using the same | |
KR101646907B1 (ko) | 박막 트랜지스터 표시판의 제조 방법 및 이에 사용되는 네가티브 포토레지스트 조성물 | |
US20100055851A1 (en) | Photoresist compostion, method for forming thin film patterns, and method for manufacturing a thin film transistor using the same | |
KR101809075B1 (ko) | 박막 트랜지스터 표시판의 제조 방법 및 이에 사용되는 포토레지스트 조성물 | |
US9176383B2 (en) | Photoresist composition and method of manufacturing thin film transistor substrate using the same | |
JP5076611B2 (ja) | 電極パターンの形成方法 | |
US9343553B2 (en) | Photoresist composition, method of forming a pattern and method of manufacturing a thin film transistor substrate | |
KR101737798B1 (ko) | 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법 | |
JP4507277B2 (ja) | パターン形成方法 | |
KR101564403B1 (ko) | 박막 트랜지스터 표시판의 제조 방법 및 이에 사용되는 네가티브 포토레지스트 조성물 | |
US20110287360A1 (en) | Photoresist composition and method of forming pattern by using the same | |
US20160085150A1 (en) | Photoresist composition and method of manufacturing circuit pattern using the same | |
JP2007272138A (ja) | レジストパターン形成方法及び感光性樹脂組成物 | |
US8911926B2 (en) | Photoresist composition and method of forming a metal pattern using the same | |
JP2007272002A (ja) | レジストパターン形成方法及び感光性樹脂組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Correction of invention patent gazette |
Correction item: Third inventor Correct: Li Xiguo False: Li Yiguo Number: 10 Volume: 29 |
|
CI03 | Correction of invention patent |
Correction item: Third inventor Correct: Li Xiguo False: Li Yiguo Number: 10 Page: The title page Volume: 29 |
|
ERR | Gazette correction |
Free format text: CORRECT: THE THIRD INVENTOR; FROM: LI YIGUO TO: LI XIGUO |
|
RECT | Rectification |