CN101481825A - Crystal growth furnace with convection type heat radiation structure - Google Patents
Crystal growth furnace with convection type heat radiation structure Download PDFInfo
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- CN101481825A CN101481825A CNA2008100022946A CN200810002294A CN101481825A CN 101481825 A CN101481825 A CN 101481825A CN A2008100022946 A CNA2008100022946 A CN A2008100022946A CN 200810002294 A CN200810002294 A CN 200810002294A CN 101481825 A CN101481825 A CN 101481825A
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Abstract
The invention discloses a crystal growing furnace with a convection radiating structure. Furnace space of the crystal growing furnace is provided with a heating chamber, and the heating chamber is provided with an upper baffle plate, a plurality of side baffle plates and a lower baffle plate. The upper baffle plate is provided with an upper opening and the lower baffle plate is provided with a central opening. When silicon slurry is condensed, a lower driver drives a lower valve to open the central opening, which causes cold current to flow into the bottom layer of the heating chamber through the central opening, then an upper driver drives an upper valve to open the upper opening, which causes thermal current to outflow through the upper opening, flow down along a cooled furnace wall and flow back to the heating chamber through the central opening. An automatic convection circulating radiating flow field of the growing furnace can radiate heat rapidly, which saves time and improves the production efficiency. In the cooling procedure, solidification and crystallization start from the bottom and sequentially go upwards to cause silicon crystal ingots to have no internal stress, no fragmentation and excellent quality.
Description
Technical field
The present invention relates to the long brilliant stove of a kind of polysilicon, refer to a kind of brilliant stove of the length with convection type heat-dissipating structure that is applicable to especially.
Background technology
See also Fig. 1, it is the brilliant stove synoptic diagram of existing length.As shown in the figure, long brilliant stove stove content is provided with a heating chamber 91, and heating chamber 91 includes cage 911, well heater 912, crucible 913, reaches support table body 914.
As shown in Figure 1, when silicon starch in well heater 912, be heated to molten state after, up opens in cage 911 of its long brilliant time-histories heating chamber 91, awkward silence at a meeting enters heating chamber 91 all around by cage 911 belows.Because support table body 913 is very thick and heavy, though there is awkward silence at a meeting to enter cooling, the relatively hot capacity of support table body 913 is big, and contains the also difficult cooling in crucible 913 bottoms of carrying the silicon slurry together with making.Therefore, silicon is starched and is not reached the long brilliant temperature of ideal in crucible 913 bottoms, and awkward silence at a meeting has made the top and the sidepiece of silicon slurry, especially corner cooling curing in advance.
When silicon slurry when liquid phase converts solid phase to, its volume expands 9.5% approximately, the long brilliant process of existing silicon slurry can be earlier from the top, and side grow up to central authorities, that is the top of silicon slurry and curing in advance all around, in after a while just its swelling pressure that produced of solidified central part can't upwards disengage, therefore produce internal stress.This internal stress cause sometimes brilliant heavy stone used as an anchor around cracked, especially more obvious in four corners, though there is not tangible slight crack sometimes, the stripping and slicing of having arrived back engineering is during with section, crystal block or chip can be cracked.Therefore, its quality of production in brilliant heavy stone used as an anchor is not good.
Moreover, cage 911 pull-ups in long brilliant process, with 910 frictions of sky plate, the graphite bits can peel off and pollute the silicon wafer heavy stone used as an anchor around its inwall.Annealing time-histories cage 911 puts down again closes heating chamber 91, the pull-up once again of cooling time-histories, and so forth about, not only peel off carbon dust and can infiltrate in the silicon slurry, cause carbon content to raise, reduce quality.Make the abrasion when long of 910 of heating chamber 91 inwalls and day plates again, cause the gap to increase gradually, the situation that the heat ease is lost can increase day by day.
In addition, in order to shorten the refrigerative time-histories, six dividing plates of heating chamber 91 only carry out heat insulation with the made thermofin 92 of graphite, and are not provided with thermal insulation layer to heating chamber 91 insulations.In the thin heat insulation mode of this kind, heat energy is assembled and is difficult for.Especially in long brilliant time-histories, open around cage 911 belows after, brilliant for the silicon slurry can evenly grow, to make the cooling of crucible 913 bottoms earlier, strengthen electric power again simultaneously and go to keep heating chamber 91 tops in high temperature, make the not only time-consuming but also power consumption of the brilliant process of length.
Summary of the invention
The object of the invention provides a kind of brilliant stove of length with convection type heat-dissipating structure, and it comprises a body of heater, a heating chamber, reaches at least one well heater.
Wherein, body of heater includes a stove epicoele, reaches furnace bottom lid.Furnace bottom lid is to be covered on stove epicoele below and one common peripheral around forming a furnace inner space.Heating chamber is located in the furnace inner space of body of heater, and heating chamber includes a upper spacer, a plurality of side dividing plate, reaches a lower clapboard, and one common peripheral is around forming an interior space.The interbody spacer of a plurality of side dividing plates and inboard wall of furnace body has an exterior space.At least one well heater is located in the interior space of heating chamber of body of heater.
And the upper spacer of heating chamber offers a upper shed, and lower clapboard offers a central opening.In addition, heating chamber includes driving mechanism on valve on, the lower valve,, reaches driving mechanism.Wherein, last driving mechanism is drive to go up that valve is optionally opened or corresponding closed in the upper shed of upper spacer, and following driving mechanism is to drive that lower valve is optionally opened or corresponding closed in the central opening of lower clapboard.
Therefore, during the condensation of silicon slurry, can make cold air stream flow into heating chamber lower floor, continue by valve open upper shed on the last driver drives via central opening, hot gas flow is gone downstream via the upper shed outflow and along the refrigerative furnace wall, and air-flow is flowed back in the heating chamber by central opening after being lowered the temperature by the furnace wall again.Therefore form an automatic convection type circulation heat radiation flow field, but quick heat radiating is saved time, is enhanced productivity.And in the long brilliant process of cooling of silicon slurry, can begin to solidify crystallization from the bottom in proper order up, make silicon wafer heavy stone used as an anchor internal stress free and cracked existence, so the silicon wafer heavy stone used as an anchor is superior in quality.
In addition, in long brilliant stove, also can include an inlet pipe, inlet pipe includes a pneumatic outlet, inlet pipe is to pass to go deep in the body of heater and make pneumatic outlet be arranged in the heating chamber and be positioned at below adjacent central opening part, and import argon gas to guarantee cleaning gas in the heating chamber, to promote the quality of silicon wafer piece.
Wherein, last driving mechanism can include a leading screw or oil cylinder or pneumatic cylinder, reach a CD-ROM drive motor ... Deng all can.And following driving mechanism can include a leading screw or oil cylinder or pneumatic cylinder, reach a CD-ROM drive motor ... Deng all can.
And a plurality of side dividing plates of heating chamber are each other side by side around being fixed in upper spacer below, and forming cover structure on jointly.Wherein, last cover structure can be fixedly arranged in the stove epicoele, and lower clapboard can be fixedly arranged in the furnace bottom lid, therefore rises when being covered on below the stove epicoele when lower clapboard covers along with furnace bottom, and last cover structure just can be easy to corresponding cover cap above lower clapboard.And heating chamber is that bilayer structure includes the heat insulation material of an internal layer, for example adopt the heat insulation material of internal layer graphite, and an outer insulation material for example adopt outer oxide aluminum fiber insulation material.So, heating chamber can make heating chamber save the energy more when the molten silicon material through the thermal insulation of the heat insulation material of internal layer graphite, again by the insulation that reaches outer insulation material.
Also can include a support table body as the brilliant stove of above-mentioned length, this support table body includes a table, reaches many pillar stiffeners.Table is to be located in the interior space of heating chamber, and table also sees through many pillar stiffeners to be fixedly arranged in the furnace bottom lid.At least one well heater includes an end well heater and establishes with the table group of support table body.
Moreover at least one well heater can include heater top suspention and be fixedly arranged in the stove epicoele and correspondence is positioned at the table top.Heater top includes at least two layers heating arrangement, for example, a upper heater, and well heater once, both are all square framework.Empty frame shape and its periphery were greater than upper heater during following well heater was, and the two forms a Pyramid jointly.
And the upper heater of heater top also can include two Graphite Electrodess, is electrically connected to upper heater respectively and makes the upper heater heating use so that electric power to be provided.Wherein, the following well heater of heater top also can include two Graphite Electrodess, is electrically connected to down well heater respectively so that electric power order well heater heating usefulness down to be provided.Upper spacer has provided a plurality of perforations, is fixed in the stove epicoele after many root graphite electrodes can pass a plurality of perforations altogether.
Description of drawings
Fig. 1 is the brilliant stove synoptic diagram of existing length;
Fig. 2 is the sectional view of long brilliant stove one preferred embodiment of the present invention;
Fig. 3 is the sectional view of the unlatching lower valve of the long brilliant stove preferred embodiment of the present invention;
Fig. 4 is in the unlatching of the long brilliant stove preferred embodiment of the present invention, and the sectional view of lower valve;
Fig. 5 is the upper and lower valve of unlatching, and the sectional view of furnace bottom lid of the long brilliant stove preferred embodiment of the present invention.
[primary clustering nomenclature]
Body of heater 1 furnace inner space 10 stove epicoeles 11
Furnace bottom covers 12 heating chambers, 2,91 interior spaces 201
21 upper sheds 210 of the exterior space 202 upper spacers
231 times driving mechanisms 232 of central opening 230 lower valves
233 well heaters, 3,912 end well heater 31 of boring a hole
321 times well heaters 322 of heater top 32 upper heaters
Graphite Electrodes 323,324 inlet pipe 4 pneumatic outlets 41
Support table body 5,914 tables 51 pillar stiffeners 52
7,913 days plate 910 cages 911 of crucible
Thermofin 92
Embodiment
See also Fig. 2, it is the sectional view of long brilliant stove one preferred embodiment of the present invention.As shown in the figure, present embodiment is a kind of brilliant stove of length with convection type heat-dissipating structure, comprises a body of heater 1 (furnacebody), a heating chamber 2 (heating room), reaches at least one well heater 3 (heater).
The body of heater 1 of present embodiment includes a stove epicoele 11, and furnace bottom lid 12, and furnace bottom lid 12 is to be covered on stove epicoele 11 belows and one common peripheral from lower to upper around forming a furnace inner space 10.Heating chamber 2 is located in the furnace inner space 10 of body of heater 1, heating chamber 2 includes a upper spacer 21, four side dividing plates 22, an and lower clapboard 23, and one common peripheral is around forming an interior space 201, and the interbody spacer of above-mentioned six dividing plates and body of heater 15 inwalls has an exterior space 202.
And four side dividing plates 22 of heating chamber 2 are each other side by side around being fixed in upper spacer 21 belows, and common forming cover structure on.Wherein, last cover structure is to be fixedly arranged in the stove epicoele 11, and lower clapboard 23 is to be fixedly arranged in the furnace bottom lid 12.Therefore when lower clapboard 23 along with 12 risings of furnace bottom lid when being covered on stove epicoele 11 belows, last cover structure just can be easy to corresponding cover cap above lower clapboard 23.In addition, the heating chamber 2 of present embodiment is to adopt bilayer structure, and it includes the heat insulation material 221 of an internal layer, for example adopts the heat insulation material of internal layer graphite, and an outer insulation material 222, for example adopts outer oxide aluminum fiber insulation material.
So, heating chamber 2 can make heating chamber 2 save the energy more when heating and melting silicon wafer raw material and in the long brilliant process through the thermal insulation of the heat insulation material of internal layer graphite, again by the insulation that reaches outer insulation material 222.
As shown in Figure 2, well heater 3 is located in the interior space 201 of heating chamber 2, and well heater 3 includes a heater top 32 (top heater) suspention and is fixedly arranged in the stove epicoele 11 and correspondence is positioned at table 51 tops.Heater top 32 includes two layers heating arrangement, for example, one upper heater 321, and well heater 322 once, both are all square hollow framework, and following well heater 322 its peripheries are greater than upper heater 321, the two common Pyramid that forms, the silicon raw material shape that forms with correspondence storehouse shown in Figure 2.
Accept above-mentionedly, the upper heater 321 of heater top 32 makes with two Graphite Electrodess 323 and is electrically connected to upper heater 321 respectively, makes upper heater 321 heatings use so that electric power to be provided.The following well heater 322 of heater top 32 also is electrically connected to down well heater 322 respectively with two Graphite Electrodess 324, so that electric power order well heater 322 heating usefulness down to be provided.Upper spacer 21 has provided eight perforations, and above-mentioned totally four root graphite electrodes 323,324 pass wherein and are fixed in the stove epicoele 11 behind four perforations, and other has cold four graphite rods connection heater top 32 to pass all the other four perforations, and is fixed in the stove epicoele 11.
See also Fig. 2, the upper spacer 21 of present embodiment heating chamber 2 offers a upper shed 210 (upperopening), and lower clapboard 23 offers a central opening 230 (central opening).Especially, heating chamber 2 also includes driving mechanism 212 on valve 211 on (upper door), the lower valve 231 (lower door),, reaches driving mechanism 232.Wherein, the last driving mechanism 212 of present embodiment is to adopt a screw rod and a CD-ROM drive motor, and valve 211 is optionally opened or correspondence is closed in the upper shed 210 of upper spacer 21 in order to drive; The following driving mechanism 232 of present embodiment also is to adopt another screw rod and another CD-ROM drive motor, and lower valve 231 is optionally opened or correspondence is closed in the central opening 230 of lower clapboard 23 in order to drive.
Fig. 2 shows a support table body 5 (supporting table), and support table body 5 includes a table 51, reaches many pillar stiffeners 52, and table 51 is located in the interior space 201 of heating chamber 2, and table 51 also sees through many pillar stiffeners 52 to be fixedly arranged in the furnace bottom lid 12.
Wherein, the well heater 3 of present embodiment includes an end well heater 31 (bottom heater) again it is to establish for 51 groups with the table of support table body 5.Other has a load framework 6 (loadingframe), by table 51 tops of bearing in support table body 5, load framework 6 includes a base plate 61, reaches four side plates 62, four side plates 62 are to be located at base plate 61 tops and one common peripheral concave space in formation one around existing side by side, in order to be installed in a crucible 7 in it.
The lower clapboard 23 of heating chamber 2 has provided a plurality of perforation 233, and many pillar stiffeners 52 are fixed on the furnace bottom lid 12 after can passing a plurality of perforation 233 respectively.In the present embodiment, above-mentioned each root pillar stiffener 52 can use the Graphite Electrodes pillar, removes and can be resisted against end well heater 31 belows in order to support, can form electric connection again each other to provide electric power to end well heater 31 heating usefulness.
When beginning to heat, each valve Close All of heating chamber is also heated by upper and lower crucible 7 together simultaneously by top, end well heater 32,31, can Accelerate Crucible 7 in the melting efficiency of silicon raw materials; Simultaneously, the upper heater 321 of present embodiment is more arranged according to the Pyramid design that silicon raw material storehouse forms with following well heater 322, so can make the close more silicon raw material of its upper heater 321 and following well heater 322, the heat absorption that more helps the silicon raw material initial stage, in case after the outer field silicon raw materials melt of pyramid, liquefy molten silicon slurry flows directly between the particle of internal layer silicon raw material, can quicken inner silicon raw material again and absorb heat energy, so produce benign cycle with the silicon raw material in the whole pot of the Flashmelt heating crucible 7, so can save the energy and time.
As shown in Figure 2, in this example, also be provided with one and feed the inlet pipe 4 that argon gas is used, inlet pipe 4 includes a pneumatic outlet 41, and inlet pipe 4 is to pass to go deep in the body of heater 1 and make pneumatic outlet 41 be arranged in the heating chamber 2 and be positioned at adjacent central opening 230 places, heating chamber 2 below.Be convenient in the long brilliant stove heat-processed; outside argon gas imported to enter in the stove through inlet pipe 4 use as shielding gas; make silicon materials in the heating and melting deoxidation process, after some impurity volatilizations, can follow raising upwards of indoor hot gas flow by the argon gas that heating chamber 2 belows feed.Deoxidation process, last valve 211 is slightly opened, just make volatile matter can be pulled away and escape into heating chamber 2 outside, draw outside the long brilliant stove with vapor pipe again, more can guarantee cleaning gas in the heating chamber 2, guarantee the lifting of silicon wafer piece quality.
When beginning to cool down long crystalline substance, see also Fig. 3, it is the sectional view that the long brilliant stove of present embodiment is opened lower valve.When the slurry of the silicon in the crucible 7 enters long crystalline substance during the stage, last valve 211 is replied and is closed, and the power supply of cut-out end well heater 31, reduce temperature slightly and open heating chamber 2 its lower valves 231 slowly, cold air stream is entered thus, be evenly distributed to crucible 7 bottoms, contiguous thus lower valve 231 places of pneumatic outlet 41 that add inlet pipe 4 feed argon gas, make the silicon slurry solidify crystallization by bottom cooling earlier smoothly, up cooling gradually, silicon wafer extends growth from lower to upper, at this moment, heater top 32 also cooperate reduce the electric energy supply gradually and gradually the cooling.
Therefore, in solidifying crystallisation process, the pressure that the silicon wafer expansion is produced upwards squeezes, and starches the top still at soft state because of silicon, and pressure is released, and until final curing, finishes whole long brilliant.So after can improving silicon slurry around the existing crucible and solidifying earlier, by expanding, pushed the silicon wafer of the central part of after fixing, cause the serious concentration phenomenon of stress.Moreover, present embodiment so available less electric energy just can make the silicon wafer heavy stone used as an anchor that solidifies gradually keep certain softening degree, and makes silicon wafer heavy stone used as an anchor complete internal stress free and cracked existence when long crystalline substance because heating chamber 2 insulations are good, so the silicon wafer heavy stone used as an anchor is superior in quality, and can save the energy.
As shown in Figure 3, because the bulk-breaking line that central opening 230 and lower valve are 231 is very short and the position is minimum, and be positioned at table 51 belows away from 7 pots of mouths of crucible, therefore when long brilliant process, lower valve 231 is opened downwards slowly and is made when lower valve 231 leaves lower clapboard 23, and the graphite bits that the friction of the two contact surface is dropped are very limited, and will can not descend slowly and lightly in crucible 7, so can not pollute the silicon wafer heavy stone used as an anchor in the crucible 7, can guarantee the quality of silicon wafer heavy stone used as an anchor.
See also Fig. 4, it is that the long brilliant stove of present embodiment is opened the sectional view of going up, reaching lower valve.Promptly enter cooling stages after the long crystalline substance of the slurry of the silicon in the crucible 7 is finished, at this moment, the power supply of heater top 32 is closed fully, opens the last valve 211 of heating chamber 2 again.Hot gas flow in the heating chamber 2 is buoyance lift and discharge from upper shed 210 up, body of heater is lowered the temperature because of the cooling that water or spraying are arranged, therefore hot gas flow goes downstream along the furnace wall of refrigerative stove epicoele 11 with furnace bottom lid 12, therebetween, heat is lowered the temperature by the furnace wall heat absorption, is back in the heating chamber 2 by central opening again, go round and begin again, therefore form convection type circulation heat radiation flow field, use natural circulation and can cool off the silicon wafer heavy stone used as an anchor by quick heat radiating, save time.
Fig. 5 is that the long brilliant stove of present embodiment is opened upper and lower valve, reached the sectional view that furnace bottom covers.In case the stove internal cooling is to lower safety temperature, as shown in the figure, just can open furnace bottom lid 12 downwards, make a large amount of cooling draughts directly cool off the silicon wafer heavy stone used as an anchor that long crystalline substance is finished in the crucible 7, add the last stage cooling of stating, therefore, can make the cooling of this stage rapider, taken off the silicon wafer heavy stone used as an anchor fast, saved the waiting time, and increased output.
Comprehensively above-mentioned and since present embodiment in heating chamber 2 based on good heat insulation and insulation, and on the stone base of a column of effective type of heating, by opening or closed upper and lower valve 211,231, can displace the volatile matter in the silicon slurry, again may command awkward silence at a meeting air-flow, and then make the silicon after the fusion starch long brilliant process, begin to solidify crystallization from the bottom, and up grow up in regular turn equably, the pressure that just can make setting expansion is to uncrystallized top release still, so, the silicon wafer heavy stone used as an anchor does not just have stress existence or be full of cracks.It can improve existing awkward silence at a meeting air-flow skewness event, makes around the silicon slurry and top curing in advance, and produces stress or corner disruptive problem takes place in brilliant heavy stone used as an anchor is inner after long crystalline substance is finished.Again, the present invention can see through convection type circulation heat radiation flow field, can eligibly control the awkward silence at a meeting air-flow, can make the silicon wafer heavy stone used as an anchor superior in quality so that the silicon slurry is finished long brilliantly and be able to minimum heat energy and time, and can be with natural circulation mode, heat radiation by body of heater, make brilliant heavy stone used as an anchor fast cooling, reload the time, improve production capacity so can save wait.
Present embodiment from the heating of silicon materials, fusion, expeling volatile matter, silicon wafer grow up, to brilliant heavy stone used as an anchor cooling, sum total consumes the energy and time, it is many that existing is improved to.
The foregoing description is only given an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (11)
1, a kind of brilliant stove of length with convection type heat-dissipating structure comprises:
One body of heater includes a stove epicoele, and furnace bottom lid, and this furnace bottom is covered on this stove epicoele below and one common peripheral around formation one furnace inner space;
One heating chamber is located in this furnace inner space of this body of heater, and this heating chamber includes a upper spacer, a plurality of side dividing plate, an and lower clapboard, and one common peripheral is around forming an interior space, and the interbody spacer of these a plurality of side dividing plates and this inboard wall of furnace body has an exterior space; And
At least one well heater is located in this interior space of this heating chamber;
It is characterized in that:
This upper spacer of this heating chamber offers a upper shed, and this lower clapboard offers a central opening; And
This heating chamber also includes driving mechanism on valve on, the lower valve,, reaches driving mechanism, wherein, should go up driving mechanism and be and drive this and go up that valve is optionally opened or corresponding closed in this upper shed of this upper spacer, this time driving mechanism be drive that this lower valve is optionally opened or the correspondence closure in this central opening of this lower clapboard.
2, the brilliant stove of length as claimed in claim 1, it is characterized in that also include an inlet pipe, this inlet pipe includes a pneumatic outlet, this inlet pipe is passed and is goed deep in this body of heater, and this pneumatic outlet is arranged in this heating chamber and is positioned at this contiguous this central opening place, heating chamber below.
3, the brilliant stove of length as claimed in claim 1 is characterized in that, driving mechanism includes a leading screw and a motor on this.
4, the brilliant stove of length as claimed in claim 1 is characterized in that, this time driving mechanism includes a leading screw and a motor.
5, the brilliant stove of length as claimed in claim 1 is characterized in that, a plurality of side dividing plates of this of this heating chamber are each other side by side around being fixed in this upper spacer below, and forming cover structure on jointly.
6, the brilliant stove of length as claimed in claim 1 is characterized in that, this heating chamber is that bilayer structure includes the heat insulation material of an internal layer, reaches an outer insulation material.
7, the brilliant stove of length as claimed in claim 1, it is characterized in that, also include a support table body, this support table body includes a table, reaches many pillar stiffeners, this table is located in this interior space of this heating chamber, and this table also sees through these many pillar stiffeners to be fixedly arranged in this furnace bottom lid;
Wherein, this at least one well heater includes an end well heater, and this end well heater is to establish with this table group of this support table body.
8, the brilliant stove of length as claimed in claim 1 is characterized in that, this at least one well heater includes a heater top, and this heater top suspention is fixedly arranged in this stove epicoele.
9, the brilliant stove of length as claimed in claim 8 is characterized in that, this heater top includes a upper heater, reaches well heater, and its periphery of this time well heater is greater than this upper heater.
10, the brilliant stove of length as claimed in claim 9 is characterized in that, this upper heater of this heater top includes two Graphite Electrodess, is electrically connected to this upper heater respectively.
11, the brilliant stove of length as claimed in claim 9 is characterized in that, this of this heater top time well heater also includes two Graphite Electrodess, is electrically connected to this time well heater respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100022946A CN101481825B (en) | 2008-01-08 | 2008-01-08 | Crystal growth furnace with convection type heat radiation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100022946A CN101481825B (en) | 2008-01-08 | 2008-01-08 | Crystal growth furnace with convection type heat radiation structure |
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| Publication Number | Publication Date |
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| CN101481825A true CN101481825A (en) | 2009-07-15 |
| CN101481825B CN101481825B (en) | 2010-11-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100022946A Expired - Fee Related CN101481825B (en) | 2008-01-08 | 2008-01-08 | Crystal growth furnace with convection type heat radiation structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094232A (en) * | 2010-09-26 | 2011-06-15 | 常州天合光能有限公司 | Polycrystal furnace thermal field with rapid cooling and using method thereof |
| WO2013104089A1 (en) * | 2012-01-10 | 2013-07-18 | 洛阳金诺机械工程有限公司 | Temperature gradient control device for crystal growth and method thereof |
| CN103409790A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace |
| CN103409798A (en) * | 2013-08-03 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Fixing structure of lower heater of pseudo-single crystal ingot furnace |
| CN103597308A (en) * | 2011-06-16 | 2014-02-19 | 株式会社Ihi | Heat treatment furnace and method for replacing heater of same |
| CN104088009A (en) * | 2014-07-04 | 2014-10-08 | 江苏阳帆机电设备制造有限公司 | Downwards uncovering type crystal growth furnace |
| CN105483819A (en) * | 2016-01-26 | 2016-04-13 | 中山大学 | Convection control device for czochralski method crystal growth and crystal growing furnace |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3388664B2 (en) * | 1995-12-28 | 2003-03-24 | シャープ株式会社 | Method and apparatus for manufacturing polycrystalline semiconductor |
| JP3892496B2 (en) * | 1996-04-22 | 2007-03-14 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Semiconductor single crystal manufacturing method |
| DE19628851A1 (en) * | 1996-07-17 | 1998-01-22 | Wacker Siltronic Halbleitermat | Method and device for producing a single crystal |
| DE102006017621B4 (en) * | 2006-04-12 | 2008-12-24 | Schott Ag | Apparatus and method for producing multicrystalline silicon |
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2008
- 2008-01-08 CN CN2008100022946A patent/CN101481825B/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094232A (en) * | 2010-09-26 | 2011-06-15 | 常州天合光能有限公司 | Polycrystal furnace thermal field with rapid cooling and using method thereof |
| CN102094232B (en) * | 2010-09-26 | 2012-06-06 | 常州天合光能有限公司 | Polycrystal furnace thermal field with rapid cooling and using method thereof |
| CN103597308A (en) * | 2011-06-16 | 2014-02-19 | 株式会社Ihi | Heat treatment furnace and method for replacing heater of same |
| CN103597308B (en) * | 2011-06-16 | 2015-09-16 | 株式会社Ihi | Heat-treatment furnace and heater replacing options thereof |
| WO2013104089A1 (en) * | 2012-01-10 | 2013-07-18 | 洛阳金诺机械工程有限公司 | Temperature gradient control device for crystal growth and method thereof |
| CN103409790A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace |
| CN103409790B (en) * | 2013-08-01 | 2016-02-03 | 安徽大晟新能源设备科技有限公司 | The lower well heater hoisting appliance of accurate single-crystal ingot casting furnace |
| CN103409798A (en) * | 2013-08-03 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Fixing structure of lower heater of pseudo-single crystal ingot furnace |
| CN103409798B (en) * | 2013-08-03 | 2016-02-24 | 安徽大晟新能源设备科技有限公司 | The lower well heater fixed sturcture of accurate single-crystal ingot casting furnace |
| CN104088009A (en) * | 2014-07-04 | 2014-10-08 | 江苏阳帆机电设备制造有限公司 | Downwards uncovering type crystal growth furnace |
| CN105483819A (en) * | 2016-01-26 | 2016-04-13 | 中山大学 | Convection control device for czochralski method crystal growth and crystal growing furnace |
| CN105483819B (en) * | 2016-01-26 | 2017-12-05 | 中山大学 | A kind of controlling convection and crystal growing furnace for method of crystal growth by crystal pulling |
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| Publication number | Publication date |
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| CN101481825B (en) | 2010-11-17 |
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