CN101466869A - 用于铜互连层的无电镀NiP附着和/或覆盖层 - Google Patents

用于铜互连层的无电镀NiP附着和/或覆盖层 Download PDF

Info

Publication number
CN101466869A
CN101466869A CNA200680055001XA CN200680055001A CN101466869A CN 101466869 A CN101466869 A CN 101466869A CN A200680055001X A CNA200680055001X A CN A200680055001XA CN 200680055001 A CN200680055001 A CN 200680055001A CN 101466869 A CN101466869 A CN 101466869A
Authority
CN
China
Prior art keywords
layer
substrate
nip
plating
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200680055001XA
Other languages
English (en)
Chinese (zh)
Inventor
那须昭宣
陈易聪
陈玄芳
熊炯声
林则安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Industrial Technology Research Institute ITRI
Original Assignee
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Industrial Technology Research Institute ITRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude, Industrial Technology Research Institute ITRI filed Critical LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Publication of CN101466869A publication Critical patent/CN101466869A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents
    • C23C18/405Formaldehyde
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1651Two or more layers only obtained by electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886Multistep pretreatment
    • C23C18/1889Multistep pretreatment with use of metal first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
CNA200680055001XA 2006-06-16 2006-06-16 用于铜互连层的无电镀NiP附着和/或覆盖层 Pending CN101466869A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/063286 WO2007144026A1 (fr) 2006-06-16 2006-06-16 Adhésion nip autocatalytique et/ou sous-couche pour couche d'interconnexion de cuivre

Publications (1)

Publication Number Publication Date
CN101466869A true CN101466869A (zh) 2009-06-24

Family

ID=36809611

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200680055001XA Pending CN101466869A (zh) 2006-06-16 2006-06-16 用于铜互连层的无电镀NiP附着和/或覆盖层

Country Status (4)

Country Link
JP (1) JP2009540585A (fr)
CN (1) CN101466869A (fr)
TW (1) TWI417948B (fr)
WO (1) WO2007144026A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101967630B (zh) * 2009-07-28 2012-07-25 中国科学院金属研究所 镁或镁合金表面化学镀镍或镍磷合金催化层的制备方法
CN105706222A (zh) * 2013-11-21 2016-06-22 株式会社尼康 布线图案的制造方法和晶体管的制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102474977B (zh) 2009-07-07 2015-05-27 国际商业机器公司 保护密钥和代码的多层安全结构及其方法
CN102776495B (zh) * 2012-07-13 2014-05-07 南京航空航天大学 一种用于在电容式触摸屏ito走线上的化学镀镍方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE43509E1 (en) * 1996-12-19 2012-07-17 Ibiden Co., Ltd. Printed wiring board and method for manufacturing the same
JP2000357671A (ja) * 1999-04-13 2000-12-26 Sharp Corp 金属配線の製造方法
JP4613271B2 (ja) * 2000-02-29 2011-01-12 シャープ株式会社 金属配線およびその製造方法およびその金属配線を用いた薄膜トランジスタおよび表示装置
JP3707394B2 (ja) * 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
JP3808037B2 (ja) * 2001-05-15 2006-08-09 インターナショナル・ビジネス・マシーンズ・コーポレーション 基板上の金属の無電界堆積およびパターニングのための方法
JP2003264159A (ja) * 2002-03-11 2003-09-19 Ebara Corp 触媒処理方法及び触媒処理液

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101967630B (zh) * 2009-07-28 2012-07-25 中国科学院金属研究所 镁或镁合金表面化学镀镍或镍磷合金催化层的制备方法
CN105706222A (zh) * 2013-11-21 2016-06-22 株式会社尼康 布线图案的制造方法和晶体管的制造方法
CN105706222B (zh) * 2013-11-21 2018-11-23 株式会社尼康 布线图案的制造方法和晶体管的制造方法

Also Published As

Publication number Publication date
WO2007144026A1 (fr) 2007-12-21
JP2009540585A (ja) 2009-11-19
TWI417948B (zh) 2013-12-01
TW200816291A (en) 2008-04-01

Similar Documents

Publication Publication Date Title
EP0838980B1 (fr) Substrat de circuit en verre et son procédé de fabrication
KR100371298B1 (ko) 금속배선의 제조방법
US7166502B1 (en) Method of manufacturing a thin film transistor
CN100516986C (zh) 导电结构及其形成方法、阵列基板以及液晶显示面板
US9136047B2 (en) Method of forming low-resistance metal pattern, patterned metal structure, and display devices using the same
KR100377440B1 (ko) 금속 배선, 그의 제조방법, 금속 배선을 이용한 박막트랜지스터 및 표시장치
CN101466869A (zh) 用于铜互连层的无电镀NiP附着和/或覆盖层
US7935631B2 (en) Method of forming a continuous layer of a first metal selectively on a second metal and an integrated circuit formed from the method
US6518676B2 (en) Metal interconnections and active matrix substrate using the same
CN100461000C (zh) 形成具有低电阻率金属图案的方法
US20070004587A1 (en) Method of forming metal on a substrate using a Ruthenium-based catalyst
KR20080075080A (ko) TFT 구리 게이트 공정을 위한 무전해 NiWP 접착 및캡핑층
JP5048791B2 (ja) フラットパネルディスプレイの製造のための銅相互接続
JPH10135607A (ja) 配線基板及びその製造方法
JP2003051463A (ja) 金属配線の製造方法およびその方法を用いた金属配線基板
KR100798870B1 (ko) 커플링 에이전트를 포함하는 전도성 금속 도금 폴리이미드기판 및 그 제조 방법
JP2000336486A (ja) 触媒核が付与された基体、基体への触媒化処理方法及び無電解めっき方法
CN1748044A (zh) 铜活化剂溶液以及用于半导体晶种层改进的方法
KR100679064B1 (ko) 초기 금속을 갖는 범프 및 그 초기 금속을 제조하는 방법
JP2023538951A (ja) パラジウムで活性化することなく銅上に無電解ニッケルを析出させる方法
JP2003096573A (ja) 無電解めっき皮膜の形成方法
CN101416280B (zh) 由液相形成原子层薄膜的方法和微电子结构
JP3478684B2 (ja) ガラス回路基板
KR20090058477A (ko) 구리 상호연결층을 위한 무전해 NiP 접착 및/또는 캡핑층
KR100732317B1 (ko) 액정 디스플레이의 게이트/데이터 라인용 구리 전극 및 그 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20090624