CN101459036B - 一种快速优化刻蚀均匀性的方法 - Google Patents
一种快速优化刻蚀均匀性的方法 Download PDFInfo
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- CN101459036B CN101459036B CN200710094422XA CN200710094422A CN101459036B CN 101459036 B CN101459036 B CN 101459036B CN 200710094422X A CN200710094422X A CN 200710094422XA CN 200710094422 A CN200710094422 A CN 200710094422A CN 101459036 B CN101459036 B CN 101459036B
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Families Citing this family (5)
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CN102023473B (zh) * | 2009-09-17 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | 提高掩膜临界尺寸均匀度的方法 |
CN102456078B (zh) * | 2010-10-18 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | 待刻蚀层的刻蚀速率分布曲线的数据库、形成及使用方法 |
CN102427038A (zh) * | 2011-09-15 | 2012-04-25 | 上海华力微电子有限公司 | 一种先进的自动调整刻蚀均匀性的方法 |
CN109273348A (zh) * | 2018-08-15 | 2019-01-25 | 上海华力集成电路制造有限公司 | 侧墙工艺自动控制流程 |
CN111427118A (zh) * | 2020-03-25 | 2020-07-17 | 中山大学 | 一种应用于通讯波段的高效三维硫化物端面耦合器及其制备方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |