CN101452227A - 含氟化物的光致抗蚀剂剥离剂或残余物移除清洁组合物以及用其清洁微电子基板的方法 - Google Patents
含氟化物的光致抗蚀剂剥离剂或残余物移除清洁组合物以及用其清洁微电子基板的方法 Download PDFInfo
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- CN101452227A CN101452227A CNA200810095961XA CN200810095961A CN101452227A CN 101452227 A CN101452227 A CN 101452227A CN A200810095961X A CNA200810095961X A CN A200810095961XA CN 200810095961 A CN200810095961 A CN 200810095961A CN 101452227 A CN101452227 A CN 101452227A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3723—Polyamines or polyalkyleneimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
本发明涉及含氟化物的光致抗蚀剂剥离剂或残余物移除清洁组合物以及用其清洁微电子基板的方法。半水性微电子清洁制剂,其包括:(a)至少一种提供氟离子的氟化合物,(b)至少一种“褐色”α-羟基羰基化合物,其是α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物,和(c)水。该制剂还可以包含其它任选的成分,包括(d)至少一种极性的,可与水混溶的有机溶剂,(e)至少一种无金属离子的碱,其量足以使最终组合物的pH为7或更高,优选pH为约9.5至约10.8,和一种或多种(f)多羟基醇和(g)表面活性剂。该组合物用于清洁微电子设备,而没有任何明显的金属腐蚀,且与ILDs相容。
Description
技术领域
本发明涉及用于从微电子设备移除光致抗蚀剂、污染物或等离子体(plasma)或蚀刻残余物的组合物,该组合物提供了良好的铜腐蚀抑制或抵抗,同时保持了清洁效果。特别地,本发明提供了水性或半水性的,强碱性的,含氟化物清洁组合物,在该组合物中含有α-羟基羰基化合物的“褐色”寡聚或多聚共轭物材料(conjugate material),尤其是单糖的“褐色”寡聚或多聚共轭物材料。本发明也提供了使用这些组合物清洁微电子基板和设备的方法。
背景技术
通过下述步骤生产半导体设备:用光致抗蚀剂涂布无机基板;通过曝光形成光致抗蚀剂薄膜且随后显影;用形成的光致抗蚀剂薄膜作为掩膜蚀刻无机基板的暴露区域,以形成精细电路;和从无机基板上去除形成的光致抗蚀剂薄膜。或者,以与上述相同的方法形成精细电路后,将形成的光致抗蚀剂薄膜灰化,且然后从无机基板上去除残留的阻碍残余物(resist residue)。
已经提出了许多碱性基的清洁组合物,用于从这些微电子设备清洁光致抗蚀剂和残余物。然而,在清洁这些微电子设备时遇到一个明显的问题,清洁组合物有腐蚀这些微电子设备中的金属的特性,尤其是铜。然而,至少部分由于碱性剥离剂与金属的反应,已经观察到现有可用的剥离溶液,通常是碱性剥离溶液,产生各种金属腐蚀,如腐蚀触须线(corrosion whiskers)、电偶腐蚀、点蚀、金属线的切蚀(notching)。
用于避免该腐蚀问题的现有方法是使用含非碱性的有机溶剂(如异丙醇)的中间洗液(intermediate rinse)。然而,这些方法是昂贵的且具有不希望的安全、化学卫生和环境的后果。
在US专利6,465,403中公开了用于在微电子工业中通过移除光致抗蚀剂残余物和其它不希望的污染物剥离或清洁半导体晶片基板的水性碱性组合物。水性组合物一般包括(a)一种或多种无金属离子的碱,其量足以使pH约为10-13;(b)约0.01%至约5%重量(表示为%SiO2)的水溶性无金属离子的硅酸盐;(c)约0.01%至约10%重量的一种或多种金属螯合剂;和(d)任选其它成分。
然而,没有一种现有技术中公开的组合物有效地去除典型的蚀刻过程后留下的所有有机污染和含金属的残余物。使用这些制剂尤其难以去除含硅的残余物。因此,需要通过从这些基板去除无机和有机污染物清洁半导体晶片基板而不损伤集成电路的剥离组合物。这些组合物一定不能腐蚀部分构成集成电路的金属部件且应该避免高费用和由中间洗液(intermediate rinses)引起的不良后果。氟化物对于富含Si的残余物有效,但是它腐蚀许多金属(Al、Cu等)且损坏许多ILDs(如TEOS、CDO等)。因此,对于含氟化物的微电子清洁组合物有下述需要:(1)基本上与半导体设备中所用的所有金属(Al、Cu、Mo等)相容,即基本上不产生对这些金属的腐蚀;
(2)要求不需要中间洗液;
(3)对于清洁富含Si的残余物有效;和
(4)基本上不产生对ILDs的损坏。
发明内容
根据本发明,提供了水性或半水性的含氟化物的微电子清洁组合物或制剂,其包括(a)至少一种提供氟离子的含氟化合物,(b)至少一种“褐色”α-羟基羰基共轭物,其是α-羟基羰基化合物与胺或氨化合物的寡聚或多聚共轭物(oligomeric or polymeric conjugate),和(c)水。所述α-羟基羰基化合物是通式为R1CH(OH)COR2的化合物,其中R1和R2独立地选自H、脂肪族基团或环状基团,所述脂肪族基团或环状基团可含有一个或多个取代基。这些取代基包括,但不限于,选自下述的基团:芳香族基团、杂芳香族基团、羟基(-OH)、醚基(-C-O-C)、酰胺基(-C(O)NH)、亚砜基团(-C-S(O)-C)、胺(-NR3R4)和酮基(-C(O)),其中R3和R4为H或1-10个碳原子的烷基。在通式为R1CH(OH)COR2的α-羟基羰基化合物中,R1和R2优选选自H和烷基,更优选选自H、CH3和(CH2)nCH3,其中n为0-20的整数,优选为1-10,且更优选为1-6。一些合适的α-羟基羰基化合物的实例包括,但不限于,1-羟基-2-丙酮(CH3COCH2OH)CAS#119-09-6、1,3-二羟基丙酮(HOCH2COCH2OH)CAS#62147-49-3,和符合上述通式的单糖,所述单糖尤其包括葡萄糖、果糖或半乳糖。胺和α-羟基羰基化合物的反应已知首先通过使胺在羰基碳上亲核加成,然后通过Maillard反应(Yaylayan,V.A.;Harty-Magors,S.;Ismail,A.A.;J.Agric.Food Chem.1999,47,2335-2340)进行。所述Maillard反应实际上是一系列复杂的反应,其详细描述参见Dills,W.L.;Am.J.Clin.Nutr.1993,58,779S-787S。
本发明的清洁组合物可任选包含其它成分,如(d)至少一种极性的、可与水混溶的有机溶剂。所述组合物的pH可以是从酸性至碱性pH的任何合适的pH。在本发明组合物的一个实施方案中,所述组合物也可以包含(e)至少一种无金属离子的碱,其量足以使最终组合物的pH为7或更高,优选pH为约9.5至约10.8。本发明的组合物还可以包括一种或多种(f)多羟基醇和(g)表面活性剂。在组合物中所用的褐色α-羟基羰基化合物的寡聚或多聚共轭物是那些在约300至330nm处有吸收峰且所述吸收峰开始于约600至800nm波长的寡聚或多聚共轭物。这些褐色寡聚或多聚共轭物可以通过已知的“Maillard反应”形成,L.C.Maillard,Compt.Rend.154,66(1912);Ann.Chim.9,5,258(1916)。在本发明的组合物中使用的“褐色”共轭物为α-羟基羰基化合物与胺或氨化合物的寡聚或多聚共轭物,其不同于作为α-羟基羰基化合物与胺或胺化合物反应产物的仅“黄色”的α-羟基羰基化合物的共轭物,而“黄色”的α-羟基羰基共轭物不能用于本发明的制剂,因为含有“黄色”的α-羟基羰基共轭物的这些制剂,不能提供足够的铜腐蚀速率的保护。“黄色”的α-羟基羰基共轭物是那些α-羟基羰基化合物与胺或氨化合物的反应产物,其具有在约300至330nm处有吸收峰然而所述吸收峰起始于约500至580nm。
在一定温度下使本发明的清洁组合物与半导体设备接触一段时间,以足以从基板表面清洁不需要的污染物和/或残余物。本发明的组合物提供了加强的腐蚀抵抗,尤其是铜腐蚀抵抗,且提高了清洁效果。
具体实施方式
本发明的清洁组合物包含中性至碱性的水性或半水性的清洁制剂,其包括(a)至少一种提供氟离子的含氟化合物(fluoride cpmpound),(b)至少一种“褐色”α-羟基羰基共轭物,其是α-羟基羰基化合物与胺或氨化合物的寡聚或多聚共轭物,和(c)水。该制剂还可以包含其它任选的成分,包括,但不限于,(d)至少一种极性的、可与水混溶的有机溶剂,(e)至少一种无金属离子的碱,其量足以使最终组合物的pH为7或更高,当需要碱性清洁组合物时优选pH为约9.5至约10.8,和一种或多种(f)多羟基醇和(g)表面活性剂。
在本发明的组合物中所用的“褐色”α-羟基羰基共轭物是那些α-羟基羰基化合物与胺或氨化合物的寡聚或多聚共轭物,且其具有约300至330nm的吸收峰,所述吸收峰起始于约600至800nm。根据已知的方法,如上面提到的“Maillard反应”制备这些褐色的寡聚或多聚共轭物。然而,可以使用任何合适的方法得到“褐色”α-羟基羰基共轭物。而且,这些“褐色”α-羟基羰基共轭物可以以例如深色糖浆(dark molasses)形式使用。α-羟基羰基化合物与胺或含氨化合物的反应可以以下述比例进行,α-羟基羰基化合物与胺或氨化合物的化学计量比例为约1:1至约16:1,基于1mol的α-羟基羰基化合物与1mol的胺或氨化合物反应。然而,优选比例为1:1,因为存在较少的胺或氨化合物与α-羟基羰基化合物反应导致反应产物的铜腐蚀抑制能力的减少。过量胺和含有氨的化合物不会出现对清洁组合物的铜腐蚀抑制特性的任何明显影响。虽然反应可以在很宽范围的时间和温度范围进行,但是优选将α-羟基羰基化合物与胺或氨化合物在约70℃或更高下加热3小时或更长进行反应。可以使用任何合适的时间和温度,只要所得的寡聚或多聚共轭物反应产物为“褐色”产物,即具有约300至330nm的吸收峰且所述峰开始于约600至800nm。通常,在本发明所用的α-羟基羰基共轭物优选特征为具有约0.5eV或更低的低带隙(bandgap)。
任何合适的α-羟基羰基化合物与胺或氨化合物的反应可以得到褐色的α-羟基羰基共轭物。适合的α-羟基羰基化合物包括,但不限于,1-羟基-2-丙酮,CH3COCH2OH和1,3-二羟基丙酮,HOCH2COCH2OH,以及所有单糖,所述单糖包括阿拉伯糖、来苏糖、核糖、脱氧核糖、木糖、核酮糖、木酮糖、阿洛糖、阿卓糖、半乳糖、葡萄糖、古洛糖、艾杜糖、甘露糖、果糖、阿洛酮糖、山梨糖、塔格糖、甘露庚酮糖、景天庚酮糖、辛酮糖、2-酮-3-去氧-甘露-辛酮酸(octonate)和唾液糖(sialose)。尤其优选的是果糖。二糖不能用于本发明。
任何合适的胺或含有氨的化合物可以与本发明的α-羟基羰基化合物反应以产生褐色的α-羟基羰基化合物与胺或氨化合物的寡聚或多聚共轭物。其中,合适的胺为胺、二胺、三胺、烷醇胺、氨基酸,尤其是伯胺和仲胺、和烷醇胺。尤其适用的是通式为NH2(CH2)nOH的烷醇胺,其中n为1至约10的整数,优选为1至约4,且尤其为2。氨是上述适合的胺。适合的胺化合物包括,但不限于,单乙醇胺、二乙醇胺、三乙醇胺、单异丙醇胺、二亚乙基三胺、氨基乙酸。尤其优选的是单乙醇胺。果糖与单乙醇胺的反应得到优选的褐色α-羟基羰基化合物。
任何合适的提供氟离子的含氟化合物可以用于本发明的组合物。适合的含氟化合物包括HF、氟化铵、四烷基氟化铵,尤其是那些其中烷基含有1-4个碳原子的,氟化物盐如氟化铵。其中,尤其适用的含氟化合物为四甲基氟化铵、四丁基氟化铵和氟化铵,优选氟化铵。
在本发明清洁组合物中的含氟化合物的量一般在约0.0001至约10wt%的范围,优选为约0.01至约5wt%,且更优选为约0.5至约1wt%。在本发明的清洁组合物中存在的“褐色”寡聚或多聚的α-羟基羰基化合物的量为约0.1至约20wt%,优选为约1至约10wt%,且更优选为约3至约7wt%。本发明的组合物中水的量为约10至约99.9wt%,优选为约60至99wt%,且更优选为约85至约96.5wt%。所有的百分比都基于清洁组合物的总重量。
清洁组合物的pH将为酸性或碱性,但是优选将为7或更高,优选为约7至约10.8,更优选为约9.5至约10.8。视需要,在清洁组合物中任选加入无金属离子的碱以调节组合物的pH。可以使用任何适合的无金属离子的碱。其中,在清洁组合物中使用的适合的无金属离子的碱可以是季铵氢氧化物,如四烷基氢氧化铵(包括含有羟基和烷氧基的烷基,一般在烷基或烷氧基中含有1至4个碳原子)。最优选的这些碱性物质是四甲基氢氧化铵和三甲基-2-羟基乙基氢氧化铵(胆碱)。其它可用的季铵氢氧化物的实例包括:三甲基-3-羟基丙基氢氧化铵、三甲基-3-羟基丁基氢氧化铵、三甲基-4-羟基丁基氢氧化铵、三乙基-2-羟基乙基氢氧化铵、三丙基-2-羟基乙基氢氧化铵、三丁基-2-羟基乙基氢氧化铵、二甲基乙基-2-羟基乙基氢氧化铵、二甲基二(2-羟基乙基)氢氧化铵、单甲基三(2-羟基乙基)氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、单甲基-三乙基氢氧化铵、单甲基三丙基氢氧化铵、单甲基三丁基氢氧化铵、单乙基三甲基氢氧化铵、单乙基三丁基氢氧化铵、二甲基二乙基氢氧化铵、二甲基二丁基氢氧化铵等和其混合物。其它在本发明中起作用的碱包括氢氧化铵、有机胺尤其为烷醇胺如2-氨基乙醇、1-氨基-2-丙醇、1-氨基-3-丙醇、2-(2-氨基乙氧基)乙醇、2-(2-氨基乙基氨基)乙醇、2-(2-氨基乙基氨基)乙基胺等,和其它强有机碱,如胍、1,3-戊二胺、4-氨基甲基-1,8-辛二胺、氨基乙基哌嗪、4-(3-氨基丙基)吗啉、1,2-二氨基环己烷、三(2-氨基乙基)胺、2-甲基-1,5-戊二胺和羟基胺。在组合物中使用的碱的量为使组合物得到所需pH的量,且一般为约0至约15wt%,优选为约0.5至约5wt%,且更优选为约1至约2wt%。
本发明的制剂可以为水性基的,但是也可以是半水性的。即,制剂可以任选含有至少一种极性的/可与水混溶的有机溶剂。该制剂中可以使用的任何合适的极性的可与水混溶的有机溶剂。这些合适的极性的、可与水混溶的有机溶剂包括,但不限于,酰胺、砜、亚砜、饱和醇等。这些有机极性溶剂包括,但不限于,有机极性溶剂,如环丁砜(四氢噻吩-1,1-二氧化物)、3-甲基环丁砜、正丙基砜、二甲亚砜(DMSO)、甲基砜、正丁基砜、3-甲基环丁砜,酰胺如1-(2-羟基乙基)-2-吡咯烷酮(HEP)、二甲基哌啶酮(DMPD)、N-甲基-2-吡咯烷酮(NMP)、二甲基乙酰胺(DMAc)、和二甲基甲酰胺(DMF)及其混合物。尤其优选的有机极性溶剂为N-甲基吡咯烷酮、环丁砜和DMSO。如果存在,极性的、可与水混溶的有机溶剂一般以约大于0至约50wt%,优选为约5至约30wt%,且更优选为约10至约20wt%的量使用。
本发明的制剂还可以任选含有任何合适的多羟基醇成分。这些合适的多羟基醇包括,但不限于,山梨醇、木糖醇、甘油、乙二醇、丁-1,4-二醇。优选地,所用的多羟基醇优选为D-山梨醇。如果存在,在组合物中的多羟基醇的量可以为约大于0至约10wt%的范围,优选为约大于0至约7wt%,且更优选为约大于0至约5wt%。
本发明的制剂也可以包含对清洁组合物的效果无害的任选成分,例如表面活性剂。本发明的组合物也可以包含任何适合的水溶性两性的、非离子的、阳离子的或阴离子的表面活性剂。加入表面活性剂将降低制剂的表面张力并改善将被清洁的表面的润湿度,且因此改善组合物的清洁作用。在本发明组合物中使用的两性表面活性剂包括甜菜碱和磺基甜菜碱(sulfobetaines),如烷基甜菜碱、酰氨基烷基甜菜碱、烷基磺基甜菜碱和酰氨基烷基磺基甜菜碱;氨基羧酸衍生物,如两性甘氨酸盐(amphoglycinates)、两性丙酸盐(amphopropionates)、两性二氨基乙酸盐(amphodiglycinates)、和两性二丙酸盐(amphodipropionates);亚氨基二酸,如烷氧基烷基亚氨基二酸;胺氧化物,如烷基胺氧化物和烷酰氨烷基胺氧化物;氟烷基磺酸酯(fluoroalkyl sulfonates)和氟化的烷基两性表面活性剂(flurorinated alkyl amphoterics);及其混合物。优选地,所述两性表面活性剂为椰油酰氨基丙基(cocoamidopropyl)甜菜碱、椰油酰氨基丙基二甲基甜菜碱、椰油酰氨基丙基羟基磺基甜菜碱、辛酰基两性二丙酸盐(capryloamphodipropionate)、椰油酰氨基二丙酸盐、椰油两性丙酸盐、椰油两性羟基乙基丙酸盐、异癸基氧基丙基亚氨基二丙酸、月桂基亚氨基二丙酸盐、椰油酰氨基丙基胺氧化物和椰油胺氧化物,以及氟化的烷基两性表面活性剂。本发明组合物中使用的非离子型表面活性剂包括炔二醇、乙氧基化的炔二醇、氟化的烷基烷氧化物、氟化的烷基酯、氟化的聚氧乙烯烷醇、多羟基醇的脂肪酸酯、聚氧乙烯单烷基醚、聚氧乙烯二醇、硅氧烷型表面活性剂、和烷撑二醇单烷基醚。优选地,非离子型表面活性剂为炔二醇或乙氧基化的炔二醇。本发明组合物中所用的阴离子表面活性剂包括羧酸化物(carboxylate)、N-酰基肌氨酸盐、磺酸盐、硫酸盐、和正磷酸的单或二酯,如磷酸癸酯。优选地,阴离子表面活性剂为无金属的表面活性剂。本发明的组合物中的阳离子表面活性剂包括胺的乙氧基化物、二烷基二甲基铵盐、二烷基吗啉鎓盐、烷基苄基二甲基铵盐、烷基三甲基铵盐、和烷基吡啶鎓盐。优选地,阳离子表面活性剂为无卤素的表面活性剂。如果在本发明中使用表面活性剂,则这些表面活性剂的量一般为约大于0至约1wt%,优选为约0.05至约0.2wt%。
本发明的制剂还可以用一种或多种适合的金属螯合剂配制,以增加制剂将金属保留在溶液中的能力并提高对晶片基板上金属残余物的溶解度。一般为此目的使用的金属螯合剂的实例为下述的有机酸和它们的异构体和盐:乙二胺四乙酸(EDTA)、丁二胺四乙酸、环己烷-1,2-二胺四乙酸(CyDTA)、二亚乙基三胺五乙酸(DETPA)、乙二胺四丙酸、(羟基乙基)乙二胺三乙酸(HEDTA)、N,N,N’,N’-乙二胺四(亚甲基膦)酸(EDTMP)、三亚乙基四胺六乙酸(TTHA)、1,3-二氨基-2-羟基丙烷-N,N,N’,N’-四乙酸(DHPTA)、甲基亚氨基二乙酸、丙二胺四乙酸、氨基三乙酸(NTA)、柠檬酸、酒石酸、葡萄糖酸、葡糖二酸、甘油酸、草酸、邻苯二甲酸、马来酸、扁桃酸、丙二酸、乳酸、水杨酸、儿茶酚、没食子酸、没食子酸丙酯、连苯三酚、8-羟基喹啉、和半胱氨酸。优选的金属螯合剂为氨基羧酸,如环己烷-1,2-二胺四乙酸(CyDTA)。在制剂中可以存在至少一种金属螯合剂,其含量为约大于0至约1wt%,优选地含量为约0.05至约0.2wt%。
本发明的清洁组合物用于从微电子设备上清洁光致抗蚀剂或等离子体或蚀刻残余物,其是通过在适合温度下将微电子设备与本发明的清洁组合物接触适合的时间以从微电子设备上除去光致抗蚀剂或等离子体或蚀刻残余物。
本发明通过,但不限于下述示例性实施例来说明。
下述为在本发明组合物中使用的“褐色”α-羟基羰基共轭的寡聚物或多聚物的实例。
褐色成分A:100g的50:50wt的果糖与水的混合物与50g单乙醇胺在70℃下反应约3小时。
褐色成分B:100g的50:50wt的果糖与水的混合物与16g单乙醇胺在70℃温度下反应约3小时。
褐色成分C:100g的50:50wt的果糖与水的混合物与5g单乙醇胺在70℃温度下反应约3小时。
褐色成分D:100g的50:50wt的果糖与水的混合物与1g单乙醇胺在70℃温度下反应约3小时。
褐色成分E:50g果糖溶于10g水中,将混合物加热至80℃且然后加入20.8g单异丙醇胺,该溶液自身放热且在沸腾作用下释放水。
褐色成分F:50g果糖溶于10g水中,将混合物加热至80℃且然后加入29.2g二乙醇胺,该溶液自身放热且在沸腾作用下释放水。
褐色成分G:50g果糖溶于10g水中,将混合物加热至80℃且然后加入41.9g三乙醇胺,该溶液自身放热且在沸腾作用下释放水。
褐色成分H:50g果糖溶于10g水中,将混合物加热至80℃且然后加入26.5g二亚乙基三胺,该溶液自身放热且在沸腾作用下释放水。
褐色成分J:50g果糖溶于10g水中,将混合物加热至80℃且然后加入20.8g氨基乙酸(甘氨酸),该溶液自身放热且在沸腾作用下释放水。
褐色成分K:50g葡萄糖溶于10g水中,将混合物加热至80℃且然后加入17.0g单乙醇胺,该溶液自身放热且在沸腾作用下释放水。
褐色成分L:50g半乳糖溶于10g水中,将混合物加热至80℃且然后加入20.8g单乙醇胺,该溶液自身放热且在沸腾作用下释放水。
褐色成分M:50g的50:50的1-羟基-2-丙酮和水的混合物与8g单乙醇胺在70℃下反应约1小时。
褐色成分N:50g的50:50的二羟基丙酮和水的混合物与8g单乙醇胺在70℃下反应约1小时。
为了比较的目的,制备了α-羟基羰基化合物与胺的对比“黄色”反应产物。这些黄色反应产物如下:
黄色成分1:100g的50:50wt的果糖和水的混合物与16g单乙醇胺在70℃下反应3小时,然后在室温下(约20℃)保持过夜。
黄色成分2:100g的50:50wt的果糖和水的混合物与50g单乙醇胺在70℃下反应过夜,然后在室温下(约20℃)保持1周。
制备其它对比组合物,其中单独使用果糖,即没有与胺或含氨的化合物反应,使得提供了Cu腐蚀速率的基线检测。
通过下述方式列出本发明组合物和对比组合物的铜腐蚀抑制。将铜面晶片(copper blanket wafers)置于约20℃的150ml含有检测组合物的烧杯中。以约200rpm搅拌组合物15分钟,铜面不与搅拌棒接触。通过将上述“褐色”成分,或上述“黄色”对比成分,或仅将果糖单独加入到下述两种碱溶液中,而制备检测组合物。碱溶液#1:由3.25g的40% NH4F水溶液(1.3g的NH4F和1.95g水)、4.33g的30% NH4OH水溶液(1.3g的NH4OH和3.03g水)、466.82g去离子水组成;溶液总重474.4g。碱溶液#2:由1.75g的40% NH4F水溶液(0.7g的NH4F和1.05g水)和足以使本发明组合物总重为100g的去离子水组成。
所述组合物和检测结果见于表1。
表1
检测一些化合物以证明在与胺反应中的α-羟基羰基化合物对提供足够的铜腐蚀抑制的必要性。检测不同类型的羰基化合物,酮(丙酮,H3CCOCH3)、二酮(2,3-戊二酮,H3CCOCOCH2CH3)、醛(甲醛,HCOH)和两种不同的α-羟基羰基化合物(1-羟基-2-丙酮,CH3COCH2OH和1,3-二羟基丙酮,HOCH2COCH2OH)。从表2中可以看出当用于与单乙醇胺接合(conjuction)时,丙酮和甲醛都没有益处。相反,当使用α-羟基羰基化合物,1-羟基-2-丙酮和1,3-二羟基丙酮时,对Cu的腐蚀速度相当于单乙醇胺对Cu腐蚀速率的1/20。还可以看出,通过使用二酮、2,3-戊二酮,可以得到明显的腐蚀抑制。通过有机化学中公知的酮-烯醇互变异构现象可以合理解释,该现象提供了α-羟基羰基化合物的一定的化学平衡浓度(Jones,M;Organic Chemistry 1997,W.W.Norton & Company,Inc.,500 Fifth Avenue,New York,N.Y.10110)。清楚表明α-羟基羰基化合物必要性的其它数据是关于4-羟基-4-甲基-2-戊酮、β-羟基羰基化合物的结果。该化合物在铜的相容性(compatibility)中没有表现出改善,这强有力地说明需要α-羟基羰基化合物。
表2
本发明的组合物提供了从微电子设备中清洁光致抗蚀剂或等离子体或蚀刻残余物,其与已知的含氟化物的微电子清洁组合物相似,但是没有明显的铜腐蚀,其是在使用那些已知含含氟化合物的清洁组合物中遇到的。本发明的优选的清洁组合物含有约1.74重量份的果糖与单乙醇胺的寡聚或多聚共轭物,约0.06重量份的氟化铵,和约98.2重量份的水。
而本文通过引用具体的实施方式描述了本发明,应该理解为在不背离本文中公开的发明概念的精神和范围内,可以进行改变、变更和变化。因此,本发明包括落入所附权利要求的精神和范围内的所有改变、变更和变化。
Claims (25)
1.水性或半水性含氟化物微电子清洁组合物,其包括:(a)至少一种提供氟离子的含氟化合物,(b)至少一种“褐色”的α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物,和(c)水。
2.权利要求1的组合物,其中所述α-羟基羰基化合物是通式为R1CH(OH)COR2的化合物,其中R1和R2独立地选自H、脂肪族基团和环状基团。
3.权利要求2的组合物,其中在所述α-羟基羰基化合物中,R1和R2独立地选自H、CH3和(CH2)nCH3,其中n为0至20的整数,且α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物在约300至330nm处有吸收峰,且所述吸收峰开始于约600至800nm。
4.权利要求1的组合物,其中所述α-羟基羰基化合物为单糖,其选自阿拉伯糖、来苏糖、核糖、脱氧核糖、木糖、核酮糖、木酮糖、阿洛糖、阿卓糖、半乳糖、葡萄糖、古洛糖、艾杜糖、甘露糖、果糖、阿洛酮糖、山梨糖、塔格糖、甘露庚酮糖、景天庚酮糖、辛酮糖、2-酮-3-去氧-甘露-辛酮酸和唾液糖,且α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物在约300至330nm处有吸收峰,且所述吸收峰开始于约600至800nm。
5.权利要求1的组合物,其中所述α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物为果糖和单乙醇胺的共轭物。
6.权利要求5的组合物,其中所述果糖和单乙醇胺的寡聚或多聚共轭物在约300至330nm处有吸收峰,且所述吸收峰开始于约600至800nm。
7.权利要求6的组合物,其中所述共轭物通过将果糖和单乙醇胺在至少70℃的温度下一起加热至少3小时而制备。
8.权利要求1的组合物,其包括氟化铵作为含氟化合物。
9.权利要求5的组合物,其包括氟化铵作为含氟化合物。
10.权利要求9的组合物,其中所述组合物还包括氢氧化铵。
11.权利要求1的组合物,其中所述组合物的pH为约7至约10.8。
12.权利要求5的组合物,其中所述组合物的pH为约7至约10.8。
13.权利要求1的组合物,其包括约0.0001至约10wt%的氟化物成分,约0.1至约20wt%的寡聚或多聚共轭物成分和约10至约99.9wt%的水。
14.权利要求5的组合物,其包括约0.5至约1wt%的氟化物成分,约3至约7wt%的果糖和单乙醇胺的寡聚或多聚共轭物成分和约85至约96.5wt%的水。
15.权利要求1的组合物,其还包括一种或多种成分,所述成分选自表面活性剂、无金属离子的碱、极性可与水混溶的有机溶剂、多羟基醇和金属螯合剂。
16.权利要求5的组合物,其还包括一种或多种成分,所述成分选自表面活性剂、无金属离子的碱、极性可与水混溶的有机溶剂、多羟基醇和金属螯合剂。
17.权利要求5的组合物,其包括约1.74重量份的果糖和单乙醇胺寡聚或多聚共轭物、约0.06重量份的氟化铵和约98.2重量份的水。
18.权利要求1的组合物,其中所述褐色的共轭物具有约0.5eV或更低的带隙。
19.权利要求5的组合物,其中所述褐色的共轭物具有约0.5eV或更低的带隙。
20.从微电子基板清洁光致抗蚀剂、污染物或者蚀刻或灰化残余物的方法,该方法包括在一定温度下将微电子基板与清洁组合物接触一段时间以移除光致抗蚀剂、污染物或者蚀刻或灰化残余物,其中所述清洁组合物包括:(a)至少一种提供氟离子的含氟化合物,(b)至少一种“褐色”的α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物,和(c)水。
21.权利要求20的方法,其中所述α-羟基羰基化合物是通式为R1CH(OH)COR2的化合物,其中R1和R2独立地选自H、脂肪族基团和环状基团。
22.权利要求20的方法,其中所述α-羟基羰基化合物为单糖,其选自阿拉伯糖、来苏糖、核糖、脱氧核糖、木糖、核酮糖、木酮糖、阿洛糖、阿卓糖、半乳糖、葡萄糖、古洛糖、艾杜糖、甘露糖、果糖、阿洛酮糖、山梨糖、塔格糖、甘露庚酮糖、景天庚酮糖、辛酮糖、2-酮-3-去氧-甘露-辛酮酸和唾液糖,且α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物在约300至330nm处有吸收峰,且所述吸收峰开始于约600至800nm。
23.权利要求20的方法,其中所述α-羟基羰基化合物与胺或铵化合物的寡聚或多聚共轭物为果糖和单乙醇胺的共轭物,且在约300至330nm处有吸收峰,且所述吸收峰开始于约600至800nm。
24.权利要求23的方法,其中所述共轭物通过将果糖和单乙醇胺在至少70℃的温度下一起加热至少3小时而制备。
25.权利要求24的方法,其中所述组合物包括氟化铵作为含氟化合物,且所述组合物的pH为约7至约10.8,且所述共轭物具有约0.5eV或更低的带隙。
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TW (1) | TW200925268A (zh) |
WO (1) | WO2009073588A1 (zh) |
Cited By (4)
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CN110997643A (zh) * | 2017-08-22 | 2020-04-10 | 富士胶片电子材料美国有限公司 | 清洁组合物 |
CN112442296A (zh) * | 2019-09-03 | 2021-03-05 | Nch公司 | 从表面去除涂层的组合物和方法 |
CN113161234A (zh) * | 2021-04-27 | 2021-07-23 | 上海新阳半导体材料股份有限公司 | 一种含氟清洗液组合物的应用 |
CN113444589A (zh) * | 2020-03-26 | 2021-09-28 | 东友精细化工有限公司 | 用于清除聚合物的组合物 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102009001486A1 (de) * | 2009-03-11 | 2010-09-16 | Henkel Ag & Co. Kgaa | Biologisch abbaubare Buildersubstanzen und Co-Tenside |
US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
WO2017023348A1 (en) * | 2015-08-06 | 2017-02-09 | Kyzen Corporation | Water tolerant solutions and process to remove polymeric soils and clean micro electronic substrates |
JP6808730B2 (ja) | 2016-06-03 | 2021-01-06 | 富士フイルム株式会社 | 処理液、基板洗浄方法およびレジストの除去方法 |
JP6495230B2 (ja) * | 2016-12-22 | 2019-04-03 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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ES2072244T1 (es) * | 1992-02-13 | 1995-07-16 | Torf Ets | Compuestos y productos de reaccion de amadori, procedimiento para su fabricacion y uso de los mismos. |
US5567574A (en) * | 1995-01-10 | 1996-10-22 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for photoresist and method of removing |
US6755989B2 (en) * | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
WO1998030667A1 (en) * | 1997-01-09 | 1998-07-16 | Advanced Technology Materials, Inc. | Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine |
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
-
2008
- 2008-01-30 TW TW097103555A patent/TW200925268A/zh unknown
- 2008-01-31 SG SG200800910-2A patent/SG152961A1/en unknown
- 2008-02-13 KR KR1020080012944A patent/KR20090060103A/ko not_active Application Discontinuation
- 2008-04-24 JP JP2008113551A patent/JP2009141310A/ja not_active Withdrawn
- 2008-04-30 CN CNA200810095961XA patent/CN101452227A/zh active Pending
- 2008-12-01 WO PCT/US2008/085094 patent/WO2009073588A1/en active Application Filing
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110997643A (zh) * | 2017-08-22 | 2020-04-10 | 富士胶片电子材料美国有限公司 | 清洁组合物 |
CN110997643B (zh) * | 2017-08-22 | 2023-06-06 | 富士胶片电子材料美国有限公司 | 清洁组合物 |
CN112442296A (zh) * | 2019-09-03 | 2021-03-05 | Nch公司 | 从表面去除涂层的组合物和方法 |
CN112442296B (zh) * | 2019-09-03 | 2023-10-03 | Nch公司 | 从表面去除涂层的组合物和方法 |
CN113444589A (zh) * | 2020-03-26 | 2021-09-28 | 东友精细化工有限公司 | 用于清除聚合物的组合物 |
CN113444589B (zh) * | 2020-03-26 | 2023-05-30 | 东友精细化工有限公司 | 用于清除聚合物的组合物 |
CN113161234A (zh) * | 2021-04-27 | 2021-07-23 | 上海新阳半导体材料股份有限公司 | 一种含氟清洗液组合物的应用 |
CN113161234B (zh) * | 2021-04-27 | 2023-02-17 | 上海新阳半导体材料股份有限公司 | 一种含氟清洗液组合物的应用 |
Also Published As
Publication number | Publication date |
---|---|
JP2009141310A (ja) | 2009-06-25 |
KR20090060103A (ko) | 2009-06-11 |
SG152961A1 (en) | 2009-06-29 |
TW200925268A (en) | 2009-06-16 |
WO2009073588A1 (en) | 2009-06-11 |
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