CN101442869B - Dynamic detection electrostatic protection circuit - Google Patents
Dynamic detection electrostatic protection circuit Download PDFInfo
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- CN101442869B CN101442869B CN 200710094272 CN200710094272A CN101442869B CN 101442869 B CN101442869 B CN 101442869B CN 200710094272 CN200710094272 CN 200710094272 CN 200710094272 A CN200710094272 A CN 200710094272A CN 101442869 B CN101442869 B CN 101442869B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention discloses a dynamic sensing electrostatic protection circuit comprising a dynamic sensing circuit connected between the static end and the earth terminal in parallel, a middle buffer circuit and a static leaking circuit; the middle buffer circuit is used for buffering the dynamic sensing circuit and the static leaking circuit, and performances voltage division and driving; the input end of the middle buffer circuit is connected with the dynamic sensing circuit electrically, the output end is connected with the input end of the static leaking circuit; the middle buffer circuit consists of a PMOS tube and a resistor connected in series, or consists of a NMOS tube and a resistor connected in series. The invention can further reduce the influence of the parasitic grid capacitance to the capacitance selection in the dynamic sensing circuit, and improve the static leaking performance of the dynamic sensing static leaking circuit structure.
Description
Technical field
The present invention relates to a kind of electrostatic protection circuit structure, particularly relate to a kind of dynamic detection electrostatic protection circuit.
Background technology
In the static leakage circuit,, help reducing the electrostatic leakage cut-in voltage of MOSFET pipe in the gate coupled appropriate bias voltage of electrostatic leakage Metal-oxide-semicondutor field effect transistor (MOSFET); And in multi-fork syconoid MOSFET structure, gate bias voltage also helps the uniformity of each interdigital conducting, thereby improves its electrostatic protection performance.Circuit shown in Fig. 1,2 is widely used at present, the dynamic detection electrostatic leadage circuit of being made up of resistance, electric capacity.
In circuit shown in Figure 1; when electrostatic leakage; static can pass through the grid of the certain bias voltage of RC dynamic sensing circuit coupling that resistance R, capacitor C form to electrostatic leakage device ESD NMOS; reduce the electrostatic leakage cut-in voltage of electrostatic leakage device ESDNMOS; and improve its conducting homogeneity, thereby improve the electrostatic protection performance of ESDNMOS.Yet, in order to reach certain electrostatic protection ability,, approximately need to bear 1.5 amperes electrostatic leakage electric current as Human Body Model's 2 kilovolts, therefore need more large-sized electrostatic leakage device ESDNMOS.The grid capacitance of large-sized electrostatic leakage device ESDNMOS often may influence choosing of capacitance size in the circuit for detecting of being made up of resistance R, capacitor C.
Circuit shown in Figure 2 is to have inserted the inverter that one-level is made of PMOS and NMOS pipe in the circuit of Fig. 1, thereby dynamic sensing circuit and electrostatic leakage device ESDNMOS that resistance R, capacitor C are formed keep apart.PMOS in the inverter and the size of NMOS are little more a lot of than electrostatic leakage device ESDNMOS pipe, so the capacitance size is chosen in the dynamic sensing circuit that the gate capacitance of PMOS and NMOS is formed resistance R and capacitor C in the inverter, and to influence meeting little a lot.But the grid capacitance of the PMOS of introducing pipe and NMOS pipe still can influence choosing of capacitance in the dynamic sensing circuit of resistance and electric capacity composition, influences the electrostatic leakage performance of dynamic detection electrostatic leadage circuit structure.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of dynamic detection electrostatic protection circuit, can further reduce the influence chosen of parasitic gate capacitance to capacitance in the dynamic sensing circuit, improves the electrostatic leakage performance of dynamic detection electrostatic leadage circuit structure.
For solving the problems of the technologies described above, dynamic detection electrostatic protection circuit of the present invention comprises dynamic sensing circuit, middle buffer circuit, the static leakage circuit that is attempted by between static end and the earth terminal; Middle buffer circuit is used to isolate dynamic sensing circuit and static leakage circuit, and carries out dividing potential drop and driving; The input of middle buffer circuit is electrically connected with dynamic sensing circuit, and its output is electrically connected with the input of static leakage circuit; Described dynamic sensing circuit is made up of resistance and capacitance series;
Described static leakage circuit is made of the NMOS pipe, and described middle buffer circuit is composed in series with a resistance by PMOS pipe; Perhaps,
Described static leakage circuit is made of the PMOS pipe, and described middle buffer circuit is composed in series with a resistance by NMOS pipe.
Owing to adopt the foregoing circuit structure; dynamic detection electrostatic protection circuit of the present invention is with respect to circuit shown in Figure 2; a NMOS pipe or PMOS pipe have been removed; so can further reduce the influence chosen of parasitic gate capacitance, thereby improve the electrostatic leakage performance of dynamic detection electrostatic leadage circuit structure to capacitance in the dynamic sensing circuit.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is the existing dynamic detection electrostatic protection circuit figure that is made up of resistance capacitance;
Fig. 2 is the existing dynamic detection electrostatic protection circuit figure that is made up of resistance capacitance, inverter;
Fig. 3 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment one of the present invention;
Fig. 4 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment two of the present invention;
Fig. 5 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment three of the present invention;
Fig. 6 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment four of the present invention;
Fig. 7 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment five of the present invention;
Fig. 8 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment six of the present invention;
Fig. 9 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment seven of the present invention;
Figure 10 is the circuit diagram of dynamic detection electrostatic protection circuit embodiment eight of the present invention.
Embodiment
Embodiment one
As shown in Figure 3.Dynamic detection electrostatic protection circuit of the present invention on the basis of electrostatic protection circuit structure shown in Figure 2, has been removed the NMOS pipe; Comprise dynamic sensing circuit, middle buffer circuit, static leakage circuit.The influence that parasitic gate capacitance is chosen capacitance in the dynamic sensing circuit when further reducing circuit design, thus the electrostatic leakage performance of dynamic detection electrostatic leadage circuit structure improved.Middle buffer circuit also plays the effect of dividing potential drop and driving except that playing the effect of isolating dynamic sensing circuit and static leakage circuit.
Described dynamic sensing circuit, static leakage circuit, middle buffer circuit are attempted by between static end and the earth terminal.Described dynamic sensing circuit is composed in series by resistance R 1 and capacitor C.Described static leakage circuit is made of an ESD NMOS pipe.Described middle buffer circuit is composed in series with a resistance R 2 by PMOS pipe.The grid of described PMOS pipe is electrically connected with the node of resistance R 1 and capacitor C, and the drain electrode of PMOS pipe is electrically connected with the grid of ESD NMOS pipe.
When electrostatic pulse is loaded into the static end; the PMOS pipe is opened with resistance R 2 and is formed the branch laminated structure; the certain voltage of gate bias at electrostatic leakage device ESDNMOS; thereby reduce the electrostatic leakage cut-in voltage of electrostatic leakage device ESD NMOS; and improve its conducting homogeneity, thereby improve the electrostatic protection performance of ESD NMOS.
Embodiment two
As shown in Figure 4, dynamic detection electrostatic protection circuit of the present invention on the basis of electrostatic protection circuit structure shown in Figure 2, has been removed the PMOS pipe; Comprise dynamic sensing circuit, middle buffer circuit, static leakage circuit.The influence that parasitic gate capacitance is chosen capacitance in the dynamic sensing circuit when further reducing circuit design, thus the electrostatic leakage performance of dynamic detection electrostatic leadage circuit structure improved.Middle buffer circuit also plays the effect of dividing potential drop and driving except that playing the effect of isolating dynamic sensing circuit and static leakage circuit.
Described dynamic sensing circuit, static leakage circuit, middle buffer circuit are attempted by between static end and the earth terminal.Described dynamic sensing circuit is composed in series by resistance R 1 and capacitor C.Described static leakage circuit is made of an ESD PMOS pipe.Described middle buffer circuit is composed in series with a resistance R 2 by NMOS pipe.The grid of described NMOS pipe is electrically connected with the node of resistance R 1 and capacitor C, and the drain electrode of NMOS pipe is electrically connected with the grid of ESD PMOS pipe.
When electrostatic pulse is loaded into the static end; the NMOS pipe is opened with resistance R 2 and is formed the branch laminated structure; the certain voltage of gate bias at electrostatic leakage device ESDPMOS; thereby reduce the electrostatic leakage cut-in voltage of electrostatic leakage device ESDPMOS; and improve its conducting homogeneity, thereby improve the electrostatic protection performance of ESDPMOS.
Embodiment three
As shown in Figure 5, the difference of it and embodiment one (referring to Fig. 3) is, the resistance of middle buffer circuit, dynamic sensing circuit is polysilicon resistance Rpoly or n trap resistance R nw, and the electric capacity of dynamic sensing circuit is polycrystalline silicon-on-insulator-polysilicon (pip:poly-isolation-poly) electric capacity.
Embodiment four
As shown in Figure 6, the difference of it and embodiment two (referring to Fig. 4) is that the resistance of middle buffer circuit, dynamic sensing circuit is polysilicon resistance Rpoly or n trap resistance R nw; The electric capacity of dynamic sensing circuit is polycrystalline silicon-on-insulator-polysilicon (pip:poly-isolation-poly) electric capacity.
Embodiment five
As shown in Figure 7, the difference of it and embodiment one (referring to Fig. 3) is that the resistance of middle buffer circuit, dynamic sensing circuit is polysilicon resistance Rpoly or n trap resistance R nw; The electric capacity of dynamic sensing circuit is the NMOS gate capacitance.
Embodiment six
As shown in Figure 8, the difference of it and embodiment two (referring to Fig. 4) is that the resistance in middle buffer circuit, the dynamic sensing circuit is polysilicon resistance Rpoly or n trap resistance R nw; The electric capacity of dynamic sensing circuit is the NMOS gate capacitance.
Embodiment seven
As shown in Figure 9, the difference of it and embodiment one (referring to Fig. 3) is that the resistance of middle buffer circuit, dynamic sensing circuit is polysilicon resistance Rpoly or n trap resistance R nw; The electric capacity of dynamic sensing circuit is the PMOS gate capacitance.
Embodiment eight
As shown in figure 10, the difference of it and embodiment two (referring to Fig. 4) is that the resistance of middle buffer circuit, dynamic sensing circuit is polysilicon resistance Rpoly or n trap resistance R nw, and the electric capacity of dynamic sensing circuit is the PMOS gate capacitance.
Claims (4)
1. a dynamic detection electrostatic protection circuit comprises the dynamic sensing circuit, middle buffer circuit, the static leakage circuit that are attempted by between static end and the earth terminal; Middle buffer circuit is used to isolate dynamic sensing circuit and static leakage circuit, and carries out dividing potential drop and driving; The input of middle buffer circuit is electrically connected with dynamic sensing circuit, and its output is electrically connected with the input of static leakage circuit; Described dynamic sensing circuit is made up of resistance and capacitance series; It is characterized in that:
Described static leakage circuit is made of the NMOS pipe, and described middle buffer circuit is composed in series with a resistance by PMOS pipe; Perhaps,
Described static leakage circuit is made of the PMOS pipe, and described middle buffer circuit is composed in series with a resistance by NMOS pipe.
2. dynamic detection electrostatic protection circuit as claimed in claim 1 is characterized in that: the resistance of described middle buffer circuit, dynamic sensing circuit is polysilicon resistance or n trap resistance, and the electric capacity of dynamic sensing circuit is polycrystalline silicon-on-insulator-polysilicon capacitance.
3. dynamic detection electrostatic protection circuit as claimed in claim 1 is characterized in that: the resistance of described middle buffer circuit, dynamic sensing circuit is polysilicon resistance or n trap resistance; The electric capacity of dynamic sensing circuit is the NMOS gate capacitance.
4. dynamic detection electrostatic protection circuit as claimed in claim 1 is characterized in that: the resistance in described middle buffer circuit, the dynamic sensing circuit is polysilicon resistance or n trap resistance; The electric capacity of dynamic sensing circuit is the PMOS gate capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710094272 CN101442869B (en) | 2007-11-23 | 2007-11-23 | Dynamic detection electrostatic protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 200710094272 CN101442869B (en) | 2007-11-23 | 2007-11-23 | Dynamic detection electrostatic protection circuit |
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| CN101442869A CN101442869A (en) | 2009-05-27 |
| CN101442869B true CN101442869B (en) | 2011-08-24 |
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| CN 200710094272 Active CN101442869B (en) | 2007-11-23 | 2007-11-23 | Dynamic detection electrostatic protection circuit |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958537A (en) * | 2009-07-17 | 2011-01-26 | 上海沙丘微电子有限公司 | High-voltage ESD (Electronic Static Discharge) protection circuit |
| CN102013674B (en) * | 2009-09-07 | 2013-05-15 | 上海宏力半导体制造有限公司 | Electrostatic discharge protection circuit and method |
| CN102185301B (en) * | 2011-05-20 | 2014-04-02 | 北京大学深圳研究生院 | Static discharge ESD protective circuit |
| CN103915828A (en) * | 2014-03-31 | 2014-07-09 | 电子科技大学 | RC triggered ESD protection circuit for integrated circuit |
| CN105098743B (en) * | 2014-05-04 | 2018-09-18 | 中芯国际集成电路制造(上海)有限公司 | Dynamic electrostatic electric discharge clamp circuit |
| CN104332976B (en) * | 2014-11-20 | 2017-05-17 | 辽宁大学 | High voltage compatible with electrostatic discharge power supply clamp circuit of integrated circuit |
| CN107462793A (en) * | 2017-08-18 | 2017-12-12 | 郑州云海信息技术有限公司 | A kind of server voltage coherent signal monitoring device and monitoring method |
| CN107465180B (en) * | 2017-09-21 | 2019-03-26 | 珠海亿智电子科技有限公司 | A kind of clamp circuit with exchange detection and DC detecting |
| CN107946297A (en) * | 2017-11-16 | 2018-04-20 | 长江存储科技有限责任公司 | ESD protection circuit, IC chip and electronic equipment |
| US10944258B2 (en) * | 2018-04-18 | 2021-03-09 | Ememory Technology Inc. | RC circuit triggered electrostatic discharge circuit |
| WO2020051832A1 (en) * | 2018-09-13 | 2020-03-19 | 深圳市汇顶科技股份有限公司 | Electrostatic discharge protection circuit and integrated circuit chip |
| CN109407748A (en) * | 2018-11-20 | 2019-03-01 | 深圳讯达微电子科技有限公司 | A kind of ESD protective system of low pressure difference linear voltage regulator |
| CN117291139A (en) * | 2023-11-27 | 2023-12-26 | 成都锐成芯微科技股份有限公司 | DCDC voltage stabilizer with optimized layout |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1388583A (en) * | 2001-05-30 | 2003-01-01 | 世界先进积体电路股份有限公司 | Two-stage electrostatic discharge protecting circuit with acceleratively conducting secondary stage |
| CN1414678A (en) * | 2001-10-23 | 2003-04-30 | 联华电子股份有限公司 | Electrostatic discharge protective circuit using base trigger silicon rectifier |
| FR2844929A1 (en) * | 2002-09-25 | 2004-03-26 | Media Tek Inc | Circuit for protection against electrostatic discharges (ESD) comprises Darlington n-p-a circuit and n-MOS transistor whose gate is connected to grounded output |
| CN1553174A (en) * | 2003-12-18 | 2004-12-08 | 中国科学院武汉物理与数学研究所 | Device and method for determining linear ion trap RF resonance adsorbing signals |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1388583A (en) * | 2001-05-30 | 2003-01-01 | 世界先进积体电路股份有限公司 | Two-stage electrostatic discharge protecting circuit with acceleratively conducting secondary stage |
| CN1414678A (en) * | 2001-10-23 | 2003-04-30 | 联华电子股份有限公司 | Electrostatic discharge protective circuit using base trigger silicon rectifier |
| FR2844929A1 (en) * | 2002-09-25 | 2004-03-26 | Media Tek Inc | Circuit for protection against electrostatic discharges (ESD) comprises Darlington n-p-a circuit and n-MOS transistor whose gate is connected to grounded output |
| CN1553174A (en) * | 2003-12-18 | 2004-12-08 | 中国科学院武汉物理与数学研究所 | Device and method for determining linear ion trap RF resonance adsorbing signals |
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| CN101442869A (en) | 2009-05-27 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |