CN207150552U - Analog switching circuit - Google Patents
Analog switching circuit Download PDFInfo
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- CN207150552U CN207150552U CN201721065977.7U CN201721065977U CN207150552U CN 207150552 U CN207150552 U CN 207150552U CN 201721065977 U CN201721065977 U CN 201721065977U CN 207150552 U CN207150552 U CN 207150552U
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Abstract
The utility model discloses a kind of analog switching circuit.The circuit includes：Triode, the base stage of triode is controlled by input/output port I/O mouths to be exported, and the transmitting collection of triode is connected to ground；Metal-oxide semiconductor (MOS) metal-oxide-semiconductor, the source electrode of metal-oxide-semiconductor are connected with power input, and the grid of metal-oxide-semiconductor connects with the collector terminal of triode, and the drain electrode of metal-oxide-semiconductor is connected with power output end；First voltage-regulator diode, one end are connected with power output end, and the other end is connected to ground, wherein, the voltage stabilizing value of first voltage-regulator diode and the pressure voltage of metal-oxide-semiconductor match, and when power output end input peak pulse value is higher than the voltage stabilizing value of the first voltage-regulator diode, the first voltage-regulator diode is reversed breakdown.By the utility model, solve the problems, such as that the metal-oxide-semiconductor in the analog switching circuit in correlation technique is easily damaged by peak value pulse.
Description
Technical field
Analog switching circuit technical field is the utility model is related to, in particular to a kind of analog switching circuit.
Background technology
In analog switching circuit, the switch of circuit usually is realized using the conducting and cut-off of metal-oxide-semiconductor, Fig. 1 is related skill
A kind of analog switching circuit in art, as shown in figure 1, the low and high level exported by I/O mouths, control metal-oxide-semiconductor Q2 conducting and
Shut-off, the circuit is simple, and construction cost is low, however, because every money metal-oxide-semiconductor has maximum pressure voltage requirement, when there is peak value outside
Pulse comes temporarily, if the pressure-resistant scope of pipe beyond MOS in itself, can cause metal-oxide-semiconductor to damage.
The problem of easily being damaged for the metal-oxide-semiconductor in the analog switching circuit in correlation technique by peak value pulse, at present
Not yet propose effective solution.
Utility model content
Main purpose of the present utility model is to provide a kind of analog switching circuit, opened with the simulation solved in correlation technique
The problem of metal-oxide-semiconductor in powered-down road is easily damaged by peak value pulse.
To achieve these goals, it is of the present utility model to provide a kind of analog switching circuit, including：Triode, it is described
The base stage of triode is controlled by input/output port I/O mouths and exported, and the transmitting collection of the triode is connected to ground；Metal oxide
Semiconductor MOS pipe, the source electrode of the metal-oxide-semiconductor are connected with power input, the current collection of the grid of the metal-oxide-semiconductor and the triode
Extreme connection, the drain electrode of the metal-oxide-semiconductor are connected with power output end；First voltage-regulator diode, one end and the power output end
Connection, the other end are connected to ground, wherein, the voltage stabilizing value and the pressure voltage of the metal-oxide-semiconductor of first voltage-regulator diode match,
When power output end input peak pulse value is higher than the voltage stabilizing value of first voltage-regulator diode, first voltage stabilizing two
Pole pipe is reversed breakdown.
Further, the analog switching circuit also includes：Second voltage-regulator diode, one end connect with the power input
Connecing, the other end is connected to ground, wherein, the voltage stabilizing value and the pressure voltage of the metal-oxide-semiconductor of second voltage-regulator diode match,
When the power input input peak pulse value is higher than the voltage stabilizing value of second voltage-regulator diode, the pole of the second voltage stabilizing two
Pipe is reversed breakdown.
Further, the analog switching circuit also includes：First resistor, one end and the input/output port I/O mouths
Connection, the other end are connected with the base stage of the triode.
Further, the analog switching circuit also includes：Second resistance, one end are connected with the power input, separately
One end is connected with the colelctor electrode of the triode.
Further, the analog switching circuit also includes：3rd resistor, one end are connected with the grid of the metal-oxide-semiconductor, separately
One end is connected with the colelctor electrode of the triode.
Further, the analog switching circuit also includes：First electric capacity, one end are connected with the power input, separately
One end is connected to ground.
Further, the analog switching circuit also includes：Second electric capacity, one end are connected with the power output end, separately
One end is connected with the drain electrode of the metal-oxide-semiconductor.
Further, the model AOD407 of the metal-oxide-semiconductor.
Further, the model LBZX84C36LT1G of first voltage-regulator diode.
Further, the model LBZX84C36LT1G of second voltage-regulator diode.
Analog switching circuit of the present utility model, the circuit include：Triode, the base stage of triode is by input/output port
The control output of I/O mouths, the transmitting collection of triode are connected to ground；Metal-oxide semiconductor (MOS) metal-oxide-semiconductor, the source electrode and power supply of metal-oxide-semiconductor
Input is connected, and the grid of metal-oxide-semiconductor is connected with the collector terminal of triode, and the drain electrode of metal-oxide-semiconductor is connected with power output end；First
Voltage-regulator diode, one end are connected with power output end, and the other end is connected to ground, wherein, the voltage stabilizing value of the first voltage-regulator diode with
The pressure voltage of metal-oxide-semiconductor matches, when power output end input peak pulse value is higher than the voltage stabilizing value of the first voltage-regulator diode, the
One voltage-regulator diode is reversed breakdown, solves the metal-oxide-semiconductor in the analog switching circuit in correlation technique easily by peak value arteries and veins
The problem of punching damage.By the reverse breakdown characteristics of the first voltage-regulator diode in circuit, metal-oxide-semiconductor is protected, has reached and has avoided
The effect that metal-oxide-semiconductor in analog switching circuit is easily damaged by peak value pulse.
Brief description of the drawings
Form a part of accompanying drawing of the present utility model to be used for providing further understanding to of the present utility model, this practicality is new
The schematic description and description of type is used to explain the utility model, does not form to improper restriction of the present utility model.
In accompanying drawing：
Fig. 1 is the schematic diagram of the analog switching circuit provided according to the utility model embodiment；And
Fig. 2 is the schematic diagram of the optional analog switching circuit provided according to the utility model embodiment；
Embodiment
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the utility model can
To be mutually combined.Describe the utility model in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order that those skilled in the art more fully understand the utility model, it is real below in conjunction with the utility model
The accompanying drawing in example is applied, the technical scheme in the embodiment of the utility model is clearly and completely described, it is clear that be described
Embodiment is only the embodiment of the utility model part, rather than whole embodiments.Based on the reality in the utility model
Example is applied, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all should
When the scope for belonging to the utility model protection.
It should be noted that term " first " in specification and claims of the present utility model and above-mentioned accompanying drawing,
" second " etc. is for distinguishing similar object, without for describing specific order or precedence.It should be appreciated that so
The data used can exchange in the appropriate case, so as to embodiment of the present utility model described herein.In addition, term " bag
Include " and " having " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing series of steps
Or process, system, product or the equipment of unit are not necessarily limited to those steps or the unit clearly listed, but it may include do not have
It is clearly listing or for the intrinsic other steps of these processes, product or equipment or unit.
For the ease of description, below to the invention relates to part noun or term illustrate：
Metal-oxide-semiconductor is metal (metal)-oxide (oxide)-semiconductor (semiconductor) field-effect transistor,
Or it is metal-insulator (insulator)-semiconductor to claim.The source and drain of metal-oxide-semiconductor can be exchanged, they
All it is the N-type region formed in p-type backgate.As a rule, this Liang Ge area is the same, is exchanged even if both ends
The performance of device is not interfered with.Such device is considered as symmetrical.
I/O mouths, it is input/output abbreviation, i.e. input/output port.Each equipment can have a special I/O
Address, for handling the input/output information of oneself.I/O equipment is various in style, and its corresponding interface circuit is also different, because
This, traditionally mentions interface and is only referred to I/O interfaces.
According to embodiment of the present utility model, there is provided a kind of analog switching circuit.
Fig. 1 is the schematic diagram of the analog switching circuit provided according to the utility model embodiment.As shown in figure 1, the circuit
Including：
Triode, the base stage of triode is controlled by input/output port I/O mouths to be exported, and transmitting collection and the ground of triode connect
Connect；Metal-oxide semiconductor (MOS) metal-oxide-semiconductor, the source electrode of metal-oxide-semiconductor are connected with power input, the grid of metal-oxide-semiconductor and the collection of triode
Electrode tip is connected, and the drain electrode of metal-oxide-semiconductor is connected with power output end；First voltage-regulator diode, one end are connected with power output end, separately
One end is connected to ground, wherein, the voltage stabilizing value of the first voltage-regulator diode and the pressure voltage of metal-oxide-semiconductor match, defeated in power output end
Enter peak pulse value be higher than the first voltage-regulator diode voltage stabilizing value when, the first voltage-regulator diode is reversed breakdown.
It is as shown in figure 1, (corresponding above-mentioned by adding a voltage-regulator diode at VCC_OUT (power output end) ends
First voltage-regulator diode) wherein, the voltage stabilizing value of the first voltage-regulator diode and the pressure voltage of metal-oxide-semiconductor match, when VCC_OUT ends connect
There is the situation of short circuit in the load circuit connect, and VCC_OUT ends can receive the reverse impulse of load circuit input, when the reverse arteries and veins
When the peak value of punching is larger, using voltage-regulator diode reverse breakdown characteristics, the pulse voltage that will be greater than the pressure voltage of metal-oxide-semiconductor is directly led
Ground is led to, makes metal-oxide-semiconductor input constant in pressure-resistant voltage range, so as to protect metal-oxide-semiconductor to be not easy to be damaged by peak value pulse.
The analog switching circuit that the utility model embodiment provides, by triode, the base stage of triode is by input and output
Port I/O mouths control output, the transmitting collection of triode are connected to ground；Metal-oxide semiconductor (MOS) metal-oxide-semiconductor, the source electrode of metal-oxide-semiconductor with
Power input is connected, and the grid of metal-oxide-semiconductor is connected with the collector terminal of triode, and the drain electrode of metal-oxide-semiconductor is connected with power output end；
First voltage-regulator diode, one end are connected with power output end, and the other end is connected to ground, wherein, the voltage stabilizing of the first voltage-regulator diode
Value and the pressure voltage of metal-oxide-semiconductor match, and are higher than the voltage stabilizing value of the first voltage-regulator diode in power output end input peak pulse value
When, the first voltage-regulator diode is reversed breakdown, solves the metal-oxide-semiconductor in the analog switching circuit in correlation technique easily by peak
The problem of being worth pulse damage.By the reverse breakdown characteristics of the first voltage-regulator diode in circuit, metal-oxide-semiconductor is protected, is reached
The effect for avoiding the metal-oxide-semiconductor in analog switching circuit from easily being damaged by peak value pulse.
Fig. 2 is the schematic diagram of the optional analog switching circuit provided according to the utility model embodiment.As shown in Fig. 2
Analog switching circuit also includes：Second voltage-regulator diode, one end are connected with power input, and the other end is connected to ground, wherein, the
The voltage stabilizing value of two voltage-regulator diodes and the pressure voltage of metal-oxide-semiconductor match, and are higher than second in power input input peak pulse value
During the voltage stabilizing value of voltage-regulator diode, the second voltage-regulator diode is reversed breakdown.
A voltage-regulator diode (corresponding the second above-mentioned voltage-regulator diode) is added in VCC_IN front ends, when outside VCC_IN
It is interim that portion has peak value pulse, and using voltage-regulator diode reverse breakdown characteristics, the pulse voltage that will be greater than metal-oxide-semiconductor directly turns on
To ground, make metal-oxide-semiconductor input constant in pressure-resistant voltage range, so as to which further protection metal-oxide-semiconductor is not easy to be damaged by peak value pulse
It is bad.
Alternatively, in the analog switching circuit that the utility model embodiment provides, analog switching circuit also includes：First
Resistance, one end are connected with input/output port I/O mouths, the base stage connection of the other end and triode.
R1 in above-mentioned first resistor corresponding diagram 1.
Alternatively, in the analog switching circuit that the utility model embodiment provides, analog switching circuit also includes：Second
Resistance, one end are connected with power input, the colelctor electrode connection of the other end and triode.
R2 in above-mentioned second resistance corresponding diagram 1.
Alternatively, in the analog switching circuit that the utility model embodiment provides, analog switching circuit also includes：3rd
The colelctor electrode of the grid connection of resistance, one end and metal-oxide-semiconductor, the other end and triode connects.
R3 in above-mentioned 3rd resistor corresponding diagram 1.
Alternatively, in the analog switching circuit that the utility model embodiment provides, analog switching circuit also includes：First
Electric capacity, one end are connected with power input, and the other end is connected to ground.
C1 in the first above-mentioned electric capacity corresponding diagram 1.
Alternatively, in the analog switching circuit that the utility model embodiment provides, analog switching circuit also includes：Second
Electric capacity, one end are connected with power output end, the drain electrode connection of the other end and metal-oxide-semiconductor.
C2 in the second above-mentioned electric capacity corresponding diagram 1.
Alternatively, in the analog switching circuit that the utility model embodiment provides, the model AOD407 of metal-oxide-semiconductor.
Alternatively, in the analog switching circuit that the utility model embodiment provides, the model of the first voltage-regulator diode
LBZX84C36LT1G。
Maximum pressure-resistant VDS (the V)=60V of P-channel metal-oxide-semiconductor AOD407, come when metal-oxide-semiconductor D pin input more than 60V crest voltages
When, metal-oxide-semiconductor breakdown will damage.The breakdown reverse voltage of model LBZX84C36LT1G voltage-regulator diode is 36V,
Increase a voltage-regulator diode of 36V first (D1 in corresponding diagram 1) in metal-oxide-semiconductor D pin output ends, when the outside peak value for being more than 36V
Voltage temporarily, to first pass through voltage-regulator diode, then to metal-oxide-semiconductor, due to the characteristic of the first voltage-regulator diode (D1) reverse breakdown, meeting
36V is clamped the voltage at, makes the voltage highest of arrival metal-oxide-semiconductor D pin not over 36V, so as to be effectively protected metal-oxide-semiconductor.
Alternatively, in the analog switching circuit that the utility model embodiment provides, the model of the second voltage-regulator diode
LBZX84C36LT1G。
The breakdown reverse voltage of model LBZX84C36LT1G voltage-regulator diode is 36V, on metal-oxide-semiconductor S pin inputs
Increase a voltage-regulator diode of 36V first (D2 in corresponding diagram 2), when temporarily the outside crest voltage more than 36V, to first pass through
Voltage-regulator diode, then to metal-oxide-semiconductor, due to the characteristic of the second voltage-regulator diode (D2) reverse breakdown, 36V can be clamped the voltage at,
Make the voltage highest of arrival metal-oxide-semiconductor S pin not over 36V, so as to be effectively protected metal-oxide-semiconductor.
It will be understood by those skilled in the art that embodiment of the present utility model can be provided as, system or computer program product.
Therefore, the utility model can use the implementation in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
The form of example.Embodiment of the present utility model is these are only, is not limited to the utility model.For art technology
For personnel, the utility model can have various modifications and variations.It is all to be made within spirit of the present utility model and principle
Any modification, equivalent substitution and improvements etc., it should be included within right of the present utility model.
Claims (10)
- A kind of 1. analog switching circuit, it is characterised in that including：Triode, the base stage of the triode is controlled by input/output port I/O mouths to be exported, transmitting collection and the ground of the triode Connection；Metal-oxide semiconductor (MOS) metal-oxide-semiconductor, the source electrode of the metal-oxide-semiconductor are connected with power input, the grid of the metal-oxide-semiconductor and institute The collector terminal connection of triode is stated, the drain electrode of the metal-oxide-semiconductor is connected with power output end；First voltage-regulator diode, one end are connected with the power output end, and the other end is connected to ground, wherein, first voltage stabilizing The voltage stabilizing value and the pressure voltage of the metal-oxide-semiconductor of diode match, and are higher than in the power output end if any negative peak value pulse value During the voltage stabilizing value input of first voltage-regulator diode, first voltage-regulator diode is reversed breakdown.
- 2. analog switching circuit according to claim 1, it is characterised in that the analog switching circuit also includes：Second voltage-regulator diode, one end are connected with the power input, and the other end is connected to ground, wherein, second voltage stabilizing The voltage stabilizing value and the pressure voltage of the metal-oxide-semiconductor of diode match, and are higher than institute in power input input peak pulse value When stating the voltage stabilizing value of the second voltage-regulator diode, second voltage-regulator diode is reversed breakdown.
- 3. analog switching circuit according to claim 1, it is characterised in that the analog switching circuit also includes：First resistor, one end are connected with the input/output port I/O mouths, and the other end is connected with the base stage of the triode.
- 4. analog switching circuit according to claim 1, it is characterised in that the analog switching circuit also includes：Second resistance, one end are connected with the power input, and the other end is connected with the colelctor electrode of the triode.
- 5. analog switching circuit according to claim 1, it is characterised in that the analog switching circuit also includes：3rd resistor, one end are connected with the grid of the metal-oxide-semiconductor, and the other end is connected with the colelctor electrode of the triode.
- 6. analog switching circuit according to claim 1, it is characterised in that the analog switching circuit also includes：First electric capacity, one end are connected with the power input, and the other end is connected to ground.
- 7. analog switching circuit according to claim 1, it is characterised in that the analog switching circuit also includes：Second electric capacity, one end are connected with the power output end, and the other end is connected with the drain electrode of the metal-oxide-semiconductor.
- 8. analog switching circuit according to claim 1, it is characterised in that the model AOD407 of the metal-oxide-semiconductor.
- 9. analog switching circuit according to claim 8, it is characterised in that the model of first voltage-regulator diode LBZX84C36LT1G。
- 10. analog switching circuit according to claim 2, it is characterised in that the model of second voltage-regulator diode LBZX84C36LT1G。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721065977.7U CN207150552U (en) | 2017-08-23 | 2017-08-23 | Analog switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721065977.7U CN207150552U (en) | 2017-08-23 | 2017-08-23 | Analog switching circuit |
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| Publication Number | Publication Date |
|---|---|
| CN207150552U true CN207150552U (en) | 2018-03-27 |
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ID=61669695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721065977.7U Active CN207150552U (en) | 2017-08-23 | 2017-08-23 | Analog switching circuit |
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| Country | Link |
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| CN (1) | CN207150552U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109491431A (en) * | 2018-11-14 | 2019-03-19 | 苏州绿控传动科技股份有限公司 | A kind of boot configuration circuit according to supply voltage adjustable height |
| CN109936350A (en) * | 2019-03-11 | 2019-06-25 | 北京汇能精电科技股份有限公司 | Electronic switching circuit |
-
2017
- 2017-08-23 CN CN201721065977.7U patent/CN207150552U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109491431A (en) * | 2018-11-14 | 2019-03-19 | 苏州绿控传动科技股份有限公司 | A kind of boot configuration circuit according to supply voltage adjustable height |
| CN109936350A (en) * | 2019-03-11 | 2019-06-25 | 北京汇能精电科技股份有限公司 | Electronic switching circuit |
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Legal Events
| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220826 Address after: Room 409, No. 192 Kezhu Road, Huangpu District, Guangzhou, Guangdong 510000 Patentee after: Guangzhou Shichuang Display Technology Co.,Ltd. Address before: 510530 No. 6, Yun Po four road, Whampoa District, Guangzhou, Guangdong. Patentee before: GUANGZHOU SHIYUAN ELECTRONICS Co.,Ltd. Patentee before: GUANGZHOU XICOO MEDICAL TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right |