CN206480626U - A kind of ESD protection circuit, chip and electronic equipment - Google Patents
A kind of ESD protection circuit, chip and electronic equipment Download PDFInfo
- Publication number
- CN206480626U CN206480626U CN201720091551.2U CN201720091551U CN206480626U CN 206480626 U CN206480626 U CN 206480626U CN 201720091551 U CN201720091551 U CN 201720091551U CN 206480626 U CN206480626 U CN 206480626U
- Authority
- CN
- China
- Prior art keywords
- circuit
- input
- voltage
- semiconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The utility model is related to IC design field, more particularly to a kind of ESD protection circuit and chip.The protection circuit includes：For loading electrostatic potential and exporting the RC circuits of first voltage；The logic circuit of signal is enabled for being exported according to first voltage, the logic circuit is connected with the RC circuits；For according to the on-off circuit for enabling signal static electricity discharge voltage, the on-off circuit to include input, output end and control end, and the input is for loading the electrostatic potential, and the output head grounding, the control end is connected with the logic circuit.Prior art is different from, the trigger voltage that it is used to trigger static discharge is relatively low, makes the chip provided with the ESD protection circuit safer.
Description
Technical field
The utility model is related to IC design field, more particularly to a kind of ESD protection circuit, chip and
Electronic equipment.
Background technology
As well known to those of ordinary skill in the art, due to the reason of electrostatic charge, high voltage there may be in
Around integrated circuit.When electrostatic charge is discharged, high current can result from the encapsulation point of integrated circuit.It is whole due to that may damage
Individual integrated circuit, static discharge (ESD) turns into a serious problems of semiconductor device.
For example, a people passes by during carpet, the current potential of its electrostatic pressure produced is about at 10 kilovolts or so, although this current potential
Electric discharge may be merely caused for common people slightly uncomfortable, may but destroy semiconductor chip and other for ESD phases
When sensitive computer module.Even if in fact, the as low as current potential electric discharge of 10 volts inconspicuous of common people, it is possible to damage
Semiconductor chip.Therefore, protection chip would generally be designed into chip from the circuit that esd pulse is injured.
Presently relevant ESD protection circuit has a lot, and the voltage typically all accumulated around integrated circuit exceedes
During predetermined threshold value, the raceway groove that can just trigger metal-oxide-semiconductor carries out electrostatic leakage.Thus, the trigger voltage of triggering esd event needs relative
It is higher, it is prolonged to maintain high voltage also easily to damage semiconductor chip.
Utility model content
One purpose of the utility model embodiment aims to provide a kind of ESD protection circuit, chip and electronics and set
It is standby, which solve esd event in correlation technique trigger voltage it is of a relatively high the problem of.
In order to solve the above technical problems, the utility model embodiment provides following technical scheme：
In a first aspect, the utility model embodiment discloses a kind of ESD protection circuit, the protection circuit includes：
For loading electrostatic potential and exporting the RC circuits of first voltage；Patrolling for signal is enabled for being exported according to the first voltage
Circuit is collected, the logic circuit is connected with the RC circuits；For the switch electricity according to the enable signal static electricity discharge voltage
Road, the on-off circuit includes input, output end and control end, and the input is used to load the electrostatic potential, described
Output head grounding, the control end is connected with the logic circuit.
Alternatively, the on-off circuit includes parasitic triode, and the parasitic triode parasitizes the on-off circuit
Between input and output end, and the input and output end are connected respectively.
Alternatively, the on-off circuit is metal-oxide-semiconductor, and the drain electrode of the metal-oxide-semiconductor is the input, and source electrode is the output
End, grid is the control end, and the parasitic triode connects drain electrode and the source electrode of the metal-oxide-semiconductor respectively.
Alternatively, the metal-oxide-semiconductor is P-channel metal-oxide-semiconductor or N-channel MOS pipe.
Alternatively, the RC circuits include resistance and electric capacity, and one end of the resistance is used to load the electrostatic potential, institute
The other end for stating resistance connects the input of the electric capacity and the logic circuit respectively, and one end of the electric capacity connects the electricity
Resistance, the electric capacity other end ground connection.
In second aspect, the utility model embodiment discloses a kind of chip, and the chip includes：Pad, pcb board and cloth
ESD protection circuit on the pcb board, wherein, the ESD protection circuit includes：
For loading electrostatic potential and exporting the RC circuits of first voltage；
The logic circuit of signal is enabled for being exported according to the first voltage, the logic circuit connects with the RC circuits
Connect；
For the on-off circuit according to the enable signal static electricity discharge voltage, the on-off circuit includes input, defeated
Go out end and control end, the input is connected with the pad, the output head grounding, the control end and the logic circuit
Connection.
Alternatively, the on-off circuit includes parasitic triode, and the parasitic triode parasitizes the on-off circuit
Between input and output end, and the input and output end are connected respectively.
Alternatively, the on-off circuit is metal-oxide-semiconductor, and the drain electrode of the metal-oxide-semiconductor is the input, and source electrode is the output
End, grid is the control end, and the parasitic triode connects drain electrode and the source electrode of the metal-oxide-semiconductor respectively.
Alternatively, the RC circuits include resistance and electric capacity, and one end of the resistance is used to load the electrostatic potential, institute
The other end for stating resistance connects the input of the electric capacity and the logic circuit respectively, and one end of the electric capacity connects the electricity
Resistance, the electric capacity other end ground connection.
In the third aspect, the utility model embodiment discloses a kind of electronic equipment, and the electronic equipment includes as described above
Chip.
In the utility model each embodiment, RC circuits export first voltage to logic circuit, so that logic circuit root
Signal is enabled according to first voltage output, so that on-off circuit is turned on, now, passes through on-off circuit static electricity discharge.It is different from
Prior art, the trigger voltage that it is used to trigger static discharge is relatively low, so that provided with the ESD protection circuit
Chip is safer.
Brief description of the drawings
One or more embodiments are illustrative by the picture in corresponding accompanying drawing, these exemplary theorys
The element with same reference numbers label is expressed as similar element in the bright restriction not constituted to embodiment, accompanying drawing, removes
Composition is not limited the non-figure having in special statement, accompanying drawing.
Fig. 1 is a kind of circuit diagram for ESD protection circuit that the utility model embodiment is provided；
Fig. 2 is a kind of circuit diagram for ESD protection circuit that another embodiment of the utility model is provided.
Embodiment
In order that the purpose of this utility model, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and implementation
Example, the utility model is further elaborated.It should be appreciated that specific embodiment described herein is only to explain this
Utility model, is not used to limit the utility model.
Fig. 1 is refer to, Fig. 1 is a kind of circuit diagram for ESD protection circuit that the utility model embodiment is provided.Such as
Shown in Fig. 1, the ESD protection circuit includes：RC circuits 11, logic circuit 12 and on-off circuit 13.
The input loading electrostatic potential of RC circuits 11, and first voltage is exported to logic circuit 12 by output end.
When RC circuits 11 are in discharge condition, it exports first voltage, and the first voltage has necessarily relative to static discharge voltage
Delay, logic circuit 12 can pre-process to the first voltage, be met when logic circuit 12 determines the first voltage
During preparatory condition, logic circuit 12 enables signal to the output of on-off circuit 13, and the enable signal can coordinate electrostatic potential to make out
Powered-down road 13 is in the conduction state, so that by on-off circuit 13 by electrostatic leakage.The preparatory condition can be the width of first voltage
Value is more than default amplitude, and the enable signal can be the pulse signal with certain dutycycle.
Wherein, RC circuits 11 input loading electrostatic potential can be RC circuits 11 by connecting pad (PAD), from
What the PAD of the connection was got.PAD is the place that integrated circuit is connected with other external circuitries, either supply voltage,
Line or all electronic signals, are all to enter the integrated circuit by PAD.Can be by the electrostatic discharge (ESD) protection in the present embodiment
Circuit is released the electrostatic of the corresponding integrated circuits of the PAD.
Wherein, on-off circuit includes input, output end and control end, and the input is used to load electrostatic potential, and this is defeated
Go out end ground connection.When logic circuit 12, which determines the first voltage, meets preparatory condition, logic circuit 12 is to on-off circuit 13
Control end output enables signal, and the enable signal can coordinate the electrostatic potential to make on-off circuit 13 in the conduction state, so that
The electrostatic potential is released by output end.Wherein, as described above, the electrostatic potential, which can also be the input, passes through connection
PAD, gets from the PAD of the connection.
In the present embodiment, the ESD protection circuit, can release according to the control of RC circuits and logic circuit
The electrostatic induced current of on-off circuit end loading, making the voltage of triggering electrostatic discharge event becomes controllable.
Fig. 2 is refer to, Fig. 2 is a kind of circuit for ESD protection circuit that another embodiment of the utility model is provided
Figure.As shown in Fig. 2 the ESD protection circuit includes：RC circuits 21, logic circuit 22 and on-off circuit 23.
Wherein, the RC circuits 21 include resistance 211 and electric capacity 212.One end of resistance 211 is used to load electrostatic potential, should
Electrostatic potential can the power supply of the RC circuits 21 connection got from PAD, power supply is obtained after electrostatic potential, then by the power supply
One end of resistance 211 is loaded into, the other end of resistance 211 connects the input of electric capacity 212 and logic circuit 22, electric capacity respectively
212 one end connects the resistance 211, the other end ground connection of electric capacity 212.After RC circuits 10 load electrostatic potential, it can lead to
First voltage of its output end output with delay and certain amplitude is crossed, the first voltage is by electrostatic, resistance 211 and electric capacity
212 jointly produce.
The electric capacity set in the RC circuits 10 can be used for storage electrostatic, when the RC circuits 10 are charged state, due to electricity
Holding the voltage at two ends can not be mutated, and the first voltage of the RC circuits 10 output can be much smaller than electrostatic potential, so that will not be because of mistake
High electrostatic potential and influence the output of first voltage control logic circuit to enable signal.In addition, setting electricity in the RC circuits 10
Resistance, when the electrostatic induced current that the input of RC circuits 10 is loaded is very big, the resistance can play a part of protecting electric capacity.
Wherein, the on-off circuit 23 is metal-oxide-semiconductor, and the drain electrode of the metal-oxide-semiconductor is the input of on-off circuit 23, and source electrode is switch
The output end of circuit 23, grid is the control end of on-off circuit 23.When electrostatic potential is loaded into RC circuits 21, promote logic electricity
Road 22 produces the enable signal of short time, so that the metal-oxide-semiconductor is turned on, when metal-oxide-semiconductor is turned on, the ditch that electrostatic induced current passes through metal-oxide-semiconductor
Released in road.Wherein, the metal-oxide-semiconductor can be P-channel metal-oxide-semiconductor, can also be N-channel MOS pipe.
Because the time that above-mentioned enable signal is produced is very short, so that the electrostatic induced current released from metal-oxide-semiconductor raceway groove almost can be with
Ignore, so that it cannot effective static electricity discharge.
Therefore, in certain embodiments, the on-off circuit 23 includes parasitic triode 231, and the parasitic triode 231 is parasitic
Between the input and output end of on-off circuit 23, and the input and output end are connected respectively.In the present embodiment, this is posted
Raw triode 231 is parasitized in metal-oxide-semiconductor.When the electrostatic potential that the input of metal-oxide-semiconductor is loaded is more than predetermined trigger voltage, and
The enable signal exported with combinational logic circuit 22, makes metal-oxide-semiconductor be in the conducting state of short time, at this point it is possible to pass through metal-oxide-semiconductor
Raceway groove is released minimal amount of electrostatic induced current.And due to the of short duration conducting of metal-oxide-semiconductor, can effectively reduce touching for parasitic triode 231
Generate electricity pressure, so that parasitic triode 231 is quickly opened, so as to be released substantial amounts of electrostatic induced current by parasitic triode 231.
The utility model embodiment provides a kind of ESD protection circuit, and the circuit is released by parasitic triode
Electrostatic potential, i.e.,, can be more compared to for MOS pipe trench road static electricity discharge by the body static electricity discharge of parasitic triode
The electrostatic released in the short time as much, improves the efficiency of electrostatic leakage, and can significantly reduce quiet comprising this
The area of the chip of discharge of electricity protection circuit.Further, since the of short duration conducting of metal-oxide-semiconductor, can effectively reduce parasitic triode
Trigger voltage, so that reducing esd event loads ceiling voltage on the ESD protection circuit, makes circuit safer.And
And, the conducting of metal-oxide-semiconductor short time only need to be maintained, for prior art, the area of RC circuits can be reduced, so as to enter one
Reduce to step the area of the chip comprising the ESD protection circuit.
The another embodiment of the utility model provides a kind of chip, and the chip includes pad, pcb board and is laid in described
ESD protection circuit on pcb board.
Wherein, the ESD protection circuit includes：For loading electrostatic potential and exporting the RC circuits of first voltage；
The logic circuit of signal is enabled for being exported according to first voltage, the logic circuit is connected with the RC circuits；For being made according to this
The on-off circuit of energy signal static electricity discharge voltage, the on-off circuit includes input, output end and control end, and the input is used for
The electrostatic potential is loaded, the output head grounding, the control end is connected with the logic circuit.
It should be noted that the ESD protection circuit in the present embodiment is the static discharge described in above-described embodiment
Protection circuit, the institute that it possesses the ESD protection circuit in above-described embodiment is functional.
In the present embodiment, the chip includes the ESD protection circuit for being used to protect chip internal integrated circuit, should
ESD protection circuit is by RC circuits and logic circuit control switch circuit static electricity discharge, specifically using in on-off circuit
Parasitic parasitic triode carries out electrostatic leakage, on the one hand can reduce the voltage of triggering electrostatic discharge event so that the chip
It is safer, on the other hand, the efficiency of electrostatic leakage is improved, so as to shorten the time of electrostatic leakage, thus, RC is reduced
The size of component in circuit, can generally reduce the area of the chip.
Another embodiment of the present utility model provides a kind of electronic equipment, and the electronic equipment is included such as above-mentioned embodiment institute
The chip stated, the chip includes the ESD protection circuit as described in above-mentioned embodiment, thus, while improving chip secure
Also improve the security of the electronic equipment.
Wherein, the electronic equipment includes：Bluetooth equipment (such as bluetooth earphone, Baffle Box of Bluetooth etc.), BLE equipment (are such as wrapped
Wearable device or intelligent home device of the chip containing low-power consumption bluetooth etc.), portable power source, movable storage device (such as SD/TF
Card, USB flash disk etc.), card reader etc..
Finally it should be noted that：Above example is only to illustrate the technical solution of the utility model, rather than its limitations；
Under thinking of the present utility model, it can also be combined between the technical characteristic in above example or non-be the same as Example,
Step can be realized with random order, and there are many other changes of different aspect of the present utility model as described above, be
Simplicity, they provide not in details；Although the utility model is described in detail with reference to the foregoing embodiments, this
The those of ordinary skill in field should be understood：It can still modify to the technical scheme described in foregoing embodiments,
Or equivalent substitution is carried out to which part technical characteristic；And these modifications or replacement, do not make the sheet of appropriate technical solution
Matter departs from the scope of each embodiment technical scheme of the application.
Claims (10)
1. a kind of ESD protection circuit, it is characterised in that including：
For loading electrostatic potential and exporting the RC circuits of first voltage；
The logic circuit of signal is enabled for being exported according to the first voltage, the logic circuit is connected with the RC circuits；
For the on-off circuit according to the enable signal static electricity discharge voltage, the on-off circuit includes input, output end
And control end, the input is for loading the electrostatic potential, the output head grounding, the control end and logic electricity
Road is connected.
2. ESD protection circuit according to claim 1, it is characterised in that the on-off circuit includes parasitic three pole
Pipe, the parasitic triode is parasitized between the input and output end of the on-off circuit, and connects the input respectively
And output end.
3. ESD protection circuit according to claim 2, it is characterised in that the on-off circuit is metal-oxide-semiconductor, described
The drain electrode of metal-oxide-semiconductor is the input, and source electrode is the output end, and grid is the control end, the parasitic triode difference
Connect drain electrode and the source electrode of the metal-oxide-semiconductor.
4. circuit according to claim 3, it is characterised in that the metal-oxide-semiconductor is P-channel metal-oxide-semiconductor or N-channel MOS pipe.
5. the ESD protection circuit according to any one of Claims 1-4, it is characterised in that the RC circuits include
Resistance and electric capacity, one end of the resistance are used to load the electrostatic potential, and the other end of the resistance connects the electricity respectively
Hold the input with the logic circuit, one end of the electric capacity connects the resistance, the electric capacity other end ground connection.
6. a kind of chip, it is characterised in that including：Pad, pcb board and the electrostatic discharge (ESD) protection being laid on the pcb board
Circuit,
Wherein, the ESD protection circuit includes：
For loading electrostatic potential and exporting the RC circuits of first voltage；
The logic circuit of signal is enabled for being exported according to the first voltage, the logic circuit is connected with the RC circuits；
For the on-off circuit according to the enable signal static electricity discharge voltage, the on-off circuit includes input, output end
And control end, the input is connected with the pad, the output head grounding, and the control end connects with the logic circuit
Connect.
7. chip according to claim 6, it is characterised in that the on-off circuit includes parasitic triode, the parasitism
Triode is parasitized between the input and output end of the on-off circuit, and connects the input and output end respectively.
8. chip according to claim 7, it is characterised in that the on-off circuit is metal-oxide-semiconductor, the drain electrode of the metal-oxide-semiconductor
For the input, source electrode is the output end, and grid is the control end, and the parasitic triode connects the MOS respectively
The drain electrode of pipe and source electrode.
9. chip according to claim 6, it is characterised in that the RC circuits include resistance and electric capacity, the resistance
One end is used to load the electrostatic potential, and the other end of the resistance connects the input of the electric capacity and the logic circuit respectively
End, one end of the electric capacity connects the resistance, the electric capacity other end ground connection.
10. a kind of electronic equipment, it is characterised in that including the chip as described in any one of claim 6 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720091551.2U CN206480626U (en) | 2017-01-22 | 2017-01-22 | A kind of ESD protection circuit, chip and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720091551.2U CN206480626U (en) | 2017-01-22 | 2017-01-22 | A kind of ESD protection circuit, chip and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206480626U true CN206480626U (en) | 2017-09-08 |
Family
ID=59753811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720091551.2U Active CN206480626U (en) | 2017-01-22 | 2017-01-22 | A kind of ESD protection circuit, chip and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206480626U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109314388A (en) * | 2018-09-13 | 2019-02-05 | 深圳市汇顶科技股份有限公司 | Circuit for electrostatic discharge (ESD) protection and IC chip |
| TWI678042B (en) * | 2018-04-18 | 2019-11-21 | 力旺電子股份有限公司 | Electrostatic discharge protection system |
-
2017
- 2017-01-22 CN CN201720091551.2U patent/CN206480626U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI678042B (en) * | 2018-04-18 | 2019-11-21 | 力旺電子股份有限公司 | Electrostatic discharge protection system |
| CN109314388A (en) * | 2018-09-13 | 2019-02-05 | 深圳市汇顶科技股份有限公司 | Circuit for electrostatic discharge (ESD) protection and IC chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9531188B2 (en) | False-trigger free power-rail ESD clamp protection circuit | |
| TWI530072B (en) | Capacitance discharge circuit and power converter using the same | |
| CN109194317B (en) | Reset circuit and wearable equipment | |
| CN109390992A (en) | Battery protection chip, power supply unit and electronic cigarette | |
| CN104269399A (en) | Antistatic protection circuit | |
| CN103107528A (en) | Power clamping electrostatic discharge protection circuit | |
| CN110462415A (en) | Burr signal detection circuit, safety chip and electronic equipment | |
| CN206480626U (en) | A kind of ESD protection circuit, chip and electronic equipment | |
| CN103684374A (en) | Zero or ultra-low dc current consumption power-on and brown-out detector | |
| CN206557712U (en) | A kind of hardware reset circuit | |
| CN106058798B (en) | Voltage protection, method and wearable device | |
| CN107666307B (en) | USB inserts detection circuitry and USB inserts check out test set | |
| CN108306271A (en) | A kind of power clamp ESD protective circuit | |
| CN108429241A (en) | A kind of lithium battery protection circuit and system of VCC capacitances and incorporating resistor | |
| CN106160075B (en) | Mobile power source with automatic recognition of load function | |
| CN103515944A (en) | Power Clamp for ESD protection between power supply and ground by adopting dual-channel technology | |
| CN207150552U (en) | Analog switching circuit | |
| CN105576777A (en) | Battery protection system | |
| CN104377674B (en) | Electrostatic discharge protection circuit and integrated circuit | |
| CN206559074U (en) | A kind of power supply circuit and mobile terminal | |
| CN108169543B (en) | High voltage detection circuit | |
| CN102136722A (en) | ESD (Electro-Static Discharge) protection circuit for RFID (Radio Frequency Identification) label | |
| CN108512210A (en) | A kind of electrostatic discharge protective circuit of input/output port | |
| CN103746358B (en) | Surge suppression circuit, switching device and set-top box | |
| CN204681073U (en) | Data and charging coffret protective circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191210 Address after: Unit D88, floor 2, convention and Exhibition Center, No.1, Software Park Road, Tangjiawan Town, hi tech Zone, Zhuhai City, Guangdong Province Patentee after: Jianrong Integrated Circuit Technology (Zhuhai) Co., Ltd. Address before: 519000 Guangdong city of Zhuhai province Jida Bailian Road No. 184 building 3 floor three-dimensional technology (7-13 axis) Co-patentee before: Jian Rong semiconductor (Shenzhen) Co., Ltd. Patentee before: Jianrong Integrated Circuit Technology (Zhuhai) Co., Ltd. Co-patentee before: ZHUHAI HUANGRONG INTEGRATED CIRCUIT TECHNOLOGY CO., LTD. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220315 Address after: Rooms 1306-1309, 13 / F, 19 science Avenue West, Hong Kong Science Park, Shatin, New Territories, China Patentee after: BUILDWIN INTERNATIONAL (ZHUHAI) LTD. Address before: Unit D88, 2 / F, convention and Exhibition Center, No.1 Software Park Road, Tangjiawan Town, hi tech Zone, Zhuhai, Guangdong 519000 Patentee before: BUILDWIN INTERNATIONAL (ZHUHAI) Ltd. |