CN109314388A - Circuit for electrostatic discharge (ESD) protection and IC chip - Google Patents
Circuit for electrostatic discharge (ESD) protection and IC chip Download PDFInfo
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- CN109314388A CN109314388A CN201880001540.8A CN201880001540A CN109314388A CN 109314388 A CN109314388 A CN 109314388A CN 201880001540 A CN201880001540 A CN 201880001540A CN 109314388 A CN109314388 A CN 109314388A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/047—Free-wheeling circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Abstract
This application involves electronic technology field, a kind of circuit for electrostatic discharge (ESD) protection and IC chip are provided.Circuit for electrostatic discharge (ESD) protection includes: to be connected in parallel on power pin and the field-effect tube trigger module being grounded between pin, division module and release module (103)；Division module includes the first partial pressure unit (1021) and the second partial pressure unit (1022)；First partial pressure unit and the second partial pressure unit are connected in series, output end of the tie point as division module；The output end of field-effect tube trigger module and the output end of division module connect；The output end of division module is connect with the input terminal for module of releasing；Field-effect tube trigger module is connected when power pin is attacked by electrostatic, and the first partial pressure unit is short-circuited, and the output end voltage of division module is pulled to high level, and module of releasing is connected and the electrostatic at power pin of releasing.The application can reduce the chip area of static leakage circuit, and obtain stronger electrostatic leakage ability.
Description
Technical field
This application involves electronic technology field, in particular to a kind of circuit for electrostatic discharge (ESD) protection and IC chip.
Background technique
Durings the production of IC chip, encapsulation, test, transport etc., different degrees of electrostatic can all occur and let out
Put event.In the case that electrostatic leakage is integrated circuit suspension joint, a large amount of charge pours into the moment mistake of integrated circuit from outside to inside
Journey easily causes the failure of IC chip in the process.
The inventor of present patent application has found: the typical circuit for electrostatic discharge (ESD) protection of the prior art is as shown in Figure 1, include electricity
Hold C1, capacitor C3, resistance R1 and field effect transistor M 1, M2, M3, M4, M5, M6, M7, M8 and M9.In normal work,
VDDH is slowly powered at power pin, and GND is 0 current potential, and M5, M6, M7, M8 and M9 provide the partial pressure of VDDH to GND, and VM is
Gained intermediate potential (VM is equal to 0.5VDDH) after VDDH partial pressure, VG_ND are low level, M2 conducting, M1 cut-off, not from VDDH
To the electric leakage of GND, and realize that the current potential between VM and VDDH will not be too high and punctures M2.VDDH electrostatic is attacked at power pin
When hitting, VDDH surges, and is high potential at power pin, and VM current potential is raised under the coupling of C3, while passing through resistance R1
It slowly charges for capacitor C1, VG_ND is pulled to VM, M1 and M2 and simultaneously turns on the electrostatic leakage realized at VDDH.Wherein, on C1
Before pole plate is charged to high potential, VG_ND is constantly in high potential identical with VM, and electrostatic is released through M1 and M2 to GND by VDDH.C1
When top crown is charged to high potential, VG_ND is pulled to GND, and M1 ends at this time, and electrostatic leakage access disconnects.
It is not difficult to find out that the VM in foregoing circuit is the high level being coupled to by C3 as close possible to VDDH.For realize M1 and
The highest discharge capability of M2 needs so that VM is equal to VDDH, but with this condition, M2 size is larger, required capacitor C3 capacitance
Larger, C3 size is also larger, so that the chip area of entire circuit is very big, be easy to cause the waste of chip area.
Summary of the invention
The application section Example is designed to provide a kind of circuit for electrostatic discharge (ESD) protection and IC chip, it is intended to
The chip area of static leakage circuit is reduced, and obtains stronger electrostatic leakage ability.
The embodiment of the present application provides a kind of circuit for electrostatic discharge (ESD) protection, comprising: is connected in parallel on power pin and ground connection pin
Between field-effect tube trigger module, division module and module of releasing；Wherein, division module include the first partial pressure unit and
Second partial pressure unit, the first partial pressure unit and the second partial pressure unit are connected in series, and the first partial pressure unit and the second partial pressure unit
Output end of the tie point as division module；
The output end of field-effect tube trigger module and the output end of division module connect；
The output end of division module is connect with the input terminal for module of releasing；
Field-effect tube trigger module is connected when power pin is attacked by electrostatic, and the first partial pressure unit is short-circuited, partial pressure
The output end voltage of module is pulled to high level, and module of releasing is connected and the electrostatic at power pin of releasing.
The embodiment of the present application also provides a kind of IC chips, including above-mentioned circuit for electrostatic discharge (ESD) protection.
In terms of existing technologies, field-effect tube trigger mode is arranged in the embodiment of the present application in circuit for electrostatic discharge (ESD) protection
Block substitutes capacitor C3 in the prior art, and field-effect tube trigger module is directly connected when power pin is attacked by electrostatic,
Realize that the output end voltage of division module is pulled to high level, module of releasing at this time is connected, and point electrostatic is through letting out at power pin
Amplification module is released to ground.Wherein, it can realize that the output end of division module is electric since field-effect tube trigger module is directly connected
Pressure is pulled to equal with voltage at power pin, is coupled without capacitor, it is thus possible to realize static leakage circuit
Stronger relieving capacity, and reduce the whole chip area of static leakage circuit.
In addition, field-effect tube trigger module specifically includes: detection unit and field-effect tube；Detection unit is connected to power supply
Between pin and ground connection pin, and the output end of detection unit and the grid of field-effect tube connect；The source electrode of field-effect tube with
Power pin connection, the output end to drain as field-effect tube trigger module；Wherein, when power pin electrostatic is attacked, detection is single
The output end of member is low level.A kind of specific implementation form for present embodiments providing field-effect tube trigger module increases this
Apply for the flexibility of embodiment.Also, guarantee that field-effect tube does not have over-voltage risk, field in quiescent operation using detection unit
Effect pipe trigger module is more reliable.
In addition, detection unit specifically includes: resistance and capacitor；Resistance and capacitor be sequentially connected in series in power pin and
It is grounded between pin；Wherein, output end of the connecting pin of resistance and capacitor as detection unit.Detection provided in this embodiment is single
Meta structure is relatively simple.
In addition, field-effect tube trigger module specifically includes: third partial pressure unit, the 4th partial pressure unit, detection unit, driving
Unit and field-effect tube；The first end of third partial pressure unit is connect with power pin, and the of second end and the 4th partial pressure unit
One end connection；The second end of 4th partial pressure unit is connect with ground connection pin；Detection unit and driving unit are connected in parallel on power supply
Between pin and ground connection pin；The second end of third partial pressure unit and the first input end of driving unit connect；Detection unit
Output end and driving unit the second input terminal connect；The grid of field-effect tube and the output end of driving unit connect, source electrode
It is connect with power pin, the output end to drain as field-effect tube trigger module；Wherein, when power pin is attacked by electrostatic,
The second end of third partial pressure unit is low level, and the output end of detection unit is high level, and the output end of driving unit is low electricity
It is flat.A kind of specific implementation form for present embodiments providing field-effect tube trigger module, increases the flexible of the embodiment of the present application
Property.Also, guarantee that field-effect tube does not have over-voltage risk, field-effect in quiescent operation using detection unit and driving unit
Pipe trigger module is more reliable.
In addition, detection unit specifically includes: capacitor and resistance；Capacitor and resistance be sequentially connected in series in power pin and
It is grounded between pin；Wherein, output end of the connecting pin of capacitor and resistance as detection unit.Detection provided in this embodiment is single
Meta structure is relatively simple.
In addition, driving unit specifically includes: the first field-effect tube, the second field-effect tube, third field-effect tube and the 4th
Field-effect tube；The grid of first field-effect tube and the output end of detection unit connect, and source electrode connect with ground connection pin, drain and the
The source electrode of two field-effect tube connects；The grid of second field-effect tube is connect with the second end of third partial pressure unit, drain electrode and third
The drain electrode of field-effect tube connects；The source electrode of third field-effect tube is connect with power pin, the source electrode of grid and the 4th field-effect tube
Connection；The grid of 4th field-effect tube is connect with the second end of third partial pressure unit, and drain electrode is connect with the output end of detection unit.
A kind of specific implementation form for present embodiments providing driving unit, increases the flexibility of the embodiment of the present application.Also, it drives
Unit is made of multiple field-effect tube, and the chip area of driving unit is smaller.
Detailed description of the invention
One or more embodiments are illustrated by the picture in corresponding attached drawing, these exemplary theorys
The bright restriction not constituted to embodiment, the element in attached drawing with same reference numbers label are expressed as similar element, remove
Non- to have special statement, composition does not limit the figure in attached drawing.
Fig. 1 is the circuit diagram of circuit for electrostatic discharge (ESD) protection in the prior art；
Fig. 2 is the schematic diagram of the circuit for electrostatic discharge (ESD) protection in the application first embodiment；
Fig. 3 is the schematic diagram of the circuit for electrostatic discharge (ESD) protection in the application second embodiment.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application section Example is further elaborated.It should be appreciated that specific embodiment described herein is only used to solve
The application is released, is not used to limit the application.
The application first embodiment is related to a kind of circuit for electrostatic discharge (ESD) protection, as shown in Figure 2, comprising: is connected in parallel on power supply and connects
Field-effect tube trigger module, division module and module 103 of releasing between foot VDDH and ground connection pin GND.Wherein, mould is divided
Block includes the first partial pressure unit 1021 and the second partial pressure unit 1022, the first partial pressure unit 1021 and the second partial pressure unit 1022
It is connected in series, and output end of the tie point of the first partial pressure unit 1021 and the second partial pressure unit 1022 as division module.
Specifically, field-effect tube trigger module output end and division module output end connect, division module it is defeated
Outlet is connect with the input terminal for module 103 of releasing.Wherein, field-effect tube trigger module is attacked in power pin VDDH by electrostatic
When be connected, the first partial pressure unit 1021 is short-circuited, and the output end voltage of division module is pulled to high level, module of releasing 103
It is connected and the electrostatic at the power pin VDDH that releases.Below to the tool of each functional module of circuit for electrostatic discharge (ESD) protection in the present embodiment
Body structure is illustrated:
Field-effect tube trigger module, comprising: detection unit 1011 and field-effect tube M10.Detection unit 1011 is connected to
Between power pin VDDH and ground connection pin GND, and the grid of the output end of detection unit 1011 and field-effect tube M10 connect
It connects.The source electrode of field-effect tube M10 is connect with power pin VDDH, the output end to drain as field-effect tube trigger module.
Wherein, detection unit 1011 includes resistance R2 and capacitor C2.Resistance R2 and capacitor C2 are sequentially connected in series in power supply
Between pin VDDH and ground connection pin GND.Output end of the connecting pin of resistance R2 and capacitor C2 as detection unit, i.e. RC2_
OUT is as output end.
First partial pressure unit 1021 may include field-effect tube M7, M8 and M9, and specific connection relationship can be such as Fig. 2 institute
Show: the source electrode of M9 is connected to VDDH.The grid of M9 and drain electrode connect, and are connected to the source electrode of M8.The grid of M8 and drain electrode connect,
And it is connected to the source electrode of M7.The grid of M7 and drain electrode connect, and are connected to the second partial pressure unit 1022.Second partial pressure unit 1022
It may include field-effect tube M5, M6, specific connection relationship can be as shown in Figure 2, that is, the grid of M7 and drain electrode connect, and and M6
Grid and drain electrode connection, the source electrode of M6 and the grid of M5 and drain electrode connect, the source electrode of M5 is connected to ground connection pin GND.
Module of releasing 103 includes buffer cell, phase inverter, the 5th field-effect tube M1 and the 6th field-effect tube M2.Buffering
Unit and phase inverter are connected in parallel between the output end and ground connection pin GND of division module.The output end of buffer cell and anti-
The input terminal of phase device connects, and the output end of phase inverter and the grid of M1 connect, and the source electrode of M1 is connect with grounding pin GND, is drained
It is connect with the source electrode of M2.The drain electrode of M2 is connect with power pins VDDH, input terminal of the grid as module 103 of releasing.
Wherein, buffer cell is RC oscillating circuit, is made of resistance R1 and capacitor C1.The one end resistance R1 and division module
Output end connection, the other end connect with C1, and C1 is also connect with grounding pin GND.Phase inverter is made of field-effect tube M3, M4,
Specific connection is as shown in Figure 2.
The working principle of static leakage circuit in the present embodiment is explained below:
(1) VDDH is not affected by electrostatic attack:
VDDH is slowly powered on, and M5, M6, M7, M8 and M9 provide the partial pressure of VDDH to GND, and VM is gained after VDDH partial pressure
Intermediate potential, VM are equal to 0.5VDDH, M2 conducting.RC1_OUT is high level, and the inverted device of RC1_OUT obtains VG_ND, VG_ND
For low level, M1 cut-off, without quiescent current, module of releasing 103 is not turned on.At this point, RC2_OUT is high level VDDH, at M10
In off state, no quiescent current, and since the drain voltage of M10 is VM, M10 does not have over-voltage risk.
(2) VDDH is attacked by electrostatic:
VDDH voltage surges, and R2, C2 in detection unit 1011 have little time to respond, therefore RC2_OUT is relative to VDDH
For be low level, M10 conducting, the first partial pressure unit 1021 is short-circuited, and VM is pulled to VDDH, M2 conducting.Meanwhile it buffering single
R1, C1 in member have little time to respond, therefore RC1_OUT is low level for VM, and the inverted device of RC1_OUT obtains VG_
ND, VG_ND are high level, M1 conducting.Since M1, M2 are both turned on, that is, module of releasing 103 is connected, therefore the electrostatic warp at VDDH
M1 and M2 releases to GND.When capacitor C1 top crown in buffer cell is charged to high level, M1 cut-off, module of releasing 103 is again
It is secondary to be not turned on.
The present embodiment in terms of existing technologies, is arranged field-effect tube trigger module in circuit for electrostatic discharge (ESD) protection and comes
Capacitor C3 in the prior art is substituted, field-effect tube trigger module is directly connected when power pin VDDH is attacked by electrostatic,
Realize that the output end voltage of division module is pulled to high level, module of releasing at this time 103 is connected, and point is quiet at power pin VDDH
Electricity module 103 of being released is released to ground.Wherein, division module can be realized since field-effect tube trigger module is directly connected
Output end voltage is pulled to equal with voltage at power pin VDDH, is coupled without capacitor, it is thus possible to realize quiet
The stronger relieving capacity of electric leadage circuit, and reduce the whole chip area of static leakage circuit.
The application second embodiment is related to a kind of circuit for electrostatic discharge (ESD) protection, as shown in Figure 3.Second embodiment is real with first
Apply that example is roughly the same, be in place of the main distinction: the way of realization of field-effect tube trigger module is different, carries out below specifically
It is bright:
In the present embodiment, field-effect tube trigger module is specifically included: third partial pressure unit 1012, the 4th partial pressure unit
1013, detection unit 1011, driving unit 1014 and field-effect tube M10.The first end and power supply of third partial pressure unit 1012
Pin VDDH connection, second end are connect with the first end of the 4th partial pressure unit 1013, the second end of the 4th partial pressure unit 1013 with
It is grounded pin GND connection.Detection unit 1011 and driving unit 1014 are connected in parallel on power pin VDDH and ground connection pin
Between GND.The second end of third partial pressure unit 1012 is connect with the first input end of driving unit 1014, detection unit 1011
Output end is connect with the second input terminal of driving unit 1014, the grid of field-effect tube M10 and the output end of driving unit 1014
Connection, source electrode are connect with power pin VDDH, the output end to drain as field-effect tube trigger module.Wherein, power pin
When VDDH is attacked by electrostatic, the second end of third partial pressure unit 1012 is low level, and the output end of detection unit 1011 is height
Level, the output end of driving unit 1013 are low level.Below to each functional module of field-effect tube trigger module in the present embodiment
Specific structure be illustrated:
Detection unit 1011 includes: capacitor C3 and resistance R3.Capacitor C3 and resistance R3 are sequentially connected in series in power pin
Between VDDH and ground connection pin GND.Wherein, output end of the connecting pin of capacitor C3 and resistance R3 as detection unit 1011.
Third partial pressure unit 1012, including field-effect tube M17, M18 and M19, specific connection are as shown in Figure 3.That is, M19
Source electrode be connected to VDDH.The grid of M19 and drain electrode connect, and are connected to the source electrode of M18.The grid of M18 and drain electrode connect, and
It is connected to the source electrode of M17.The grid of M17 and drain electrode connect, and are connected to the second partial pressure unit 1013.Second partial pressure unit
1013, including field-effect tube M15, M16, specific connection is as shown in Figure 3.That is, the grid of M17 and drain electrode connect, and the grid with M6
Pole and drain electrode connection, the source electrode of M16 and the grid of M15 and drain electrode connect, and the source electrode of M15 is connected to ground connection pin GND.
Driving unit 1014 include: the first field-effect tube M11, the second field-effect tube M12, third field-effect tube M13 and
4th field-effect tube M14.The grid of M11 is connect with the output end of detection unit 1011, source electrode with ground connection pin connect, drain electrode and
The source electrode of M12 connects.The grid of M12 is connect with the second end of third partial pressure unit 1012, and drain electrode is connect with the drain electrode of M13.M13
Source electrode connect with power pin VDDH, the connection of the source electrode of grid and M14.The of the grid of M14 and third partial pressure unit 1012
The connection of two ends, drain electrode are connect with the output end of detection unit 1011.
The working principle of static leakage circuit in the present embodiment is explained below:
(1) VDDH is not affected by electrostatic attack.
VDDH is slowly powered on, and M5, M6, M7, M8 and M9 provide the partial pressure of VDDH to GND, and VM is gained after VDDH partial pressure
Intermediate potential, VM are equal to 0.5VDDH, and VM is high level, and M2 conducting, RC2_OUT is low level, M11 cut-off.Similarly, M15,
M16, M17, M18, M19 provide the partial pressure of VDDH to GND, and VX is gained intermediate potential after VDDH partial pressure, and VX is equal to 0.5VDDH,
VX is high level, M14, M12 cut-off.The grid of M13 is low level, and M13 is connected, and the grid voltage of M10 is pulled to high potential by M13
VDDH, M10 are in off state, and M10, M11 will not generate electric leakage.Since VM is equal to 0.5VDDH, VM is high level, because
This RC1_OUT is high level, and the inverted device of RC1_OUT obtains VG_ND, and VG_ND is low level, M1 cut-off, without quiescent current,
Module of releasing 103 is not turned on.
(2) VDDH is attacked by electrostatic.
VDDH voltage surges, and RC2_OUT is high level, and VX is equal to 0.5VDDH, and VX is high level, and M11, M12, M14 are simultaneously
Conducting, so that M10 grid voltage is pulled to low level GND, M10 conducting, so that VM is pulled to VDDH, M2 conducting.Meanwhile
R1, C1 in buffer cell have little time to respond, therefore RC1_OUT is low level for VM, and the inverted device of RC1_OUT obtains
It is high level, M1 conducting to VG_ND, VG_ND.Since M1, M2 are both turned on, that is, module of releasing 103 is connected, therefore quiet at VDDH
Electricity is released through M1 and M2 to GND.When capacitor C1 top crown in buffer cell is charged to high level, M1 cut-off, module of releasing
103 are not turned on again.
The present embodiment in terms of existing technologies, is arranged field-effect tube trigger module in circuit for electrostatic discharge (ESD) protection and comes
Capacitor C3 in the prior art is substituted, field-effect tube trigger module is directly connected when power pin VDDH is attacked by electrostatic,
Realize that the output end voltage of division module is pulled to high level, module of releasing at this time 103 is connected, and point is quiet at power pin VDDH
Electricity module 103 of being released is released to ground.Wherein, division module can be realized since field-effect tube trigger module is directly connected
Output end voltage is pulled to equal with voltage at power pin VDDH, is coupled without capacitor, it is thus possible to realize quiet
The stronger relieving capacity of electric leadage circuit, and reduce the whole chip area of static leakage circuit.
The application 3rd embodiment is related to a kind of IC chip, is equipped in above-described embodiment in the IC chip
The mentioned circuit for electrostatic discharge (ESD) protection arrived.
It will be understood by those skilled in the art that the various embodiments described above are the specific embodiments of realization the application, and
In practical applications, can to it, various changes can be made in the form and details, without departing from spirit and scope.
Claims (12)
1. a kind of circuit for electrostatic discharge (ESD) protection characterized by comprising be connected in parallel on power pin and the field being grounded between pin is imitated
It should pipe trigger module, division module and module of releasing；Wherein, the division module includes the first partial pressure unit and second point
Unit is pressed, first partial pressure unit and second partial pressure unit are connected in series, and first partial pressure unit and described the
Output end of the tie point of two partial pressure units as the division module；
The output end of the field-effect tube trigger module is connect with the output end of the division module；
The output end of the division module is connect with the input terminal of the module of releasing；
The field-effect tube trigger module is connected when the power pin is attacked by electrostatic, and first partial pressure unit is short
Road, the output end voltage of the division module are pulled to high level, and the module of releasing is connected and the power pin of releasing
The electrostatic at place.
2. circuit for electrostatic discharge (ESD) protection as described in claim 1, wherein the field-effect tube trigger module includes: that detection is single
Member and field-effect tube；
The detection unit is connected between the power pin and the ground connection pin, and the output end of the detection unit
It is connect with the grid of the field-effect tube；
The source electrode of the field-effect tube is connect with the power pin, the output to drain as the field-effect tube trigger module
End；
Wherein, when the power pin electrostatic is attacked, the output end of the detection unit is low level.
3. circuit for electrostatic discharge (ESD) protection as claimed in claim 2, wherein the detection unit specifically includes: resistance and electricity
Hold；
The resistance and the capacitor are sequentially connected in series between the power pin and the ground connection pin；
Wherein, output end of the connecting pin of the resistance and the capacitor as the detection unit.
4. circuit for electrostatic discharge (ESD) protection as described in claim 1, wherein the field-effect tube trigger module includes: third point
Press unit, the 4th partial pressure unit, detection unit, driving unit and field-effect tube；
The first end of the third partial pressure unit is connect with the power pin, and the first of second end and the 4th partial pressure unit
End connection；
The second end of 4th partial pressure unit is connect with the ground connection pin；
The detection unit and the driving unit are connected in parallel between the power pin and the ground connection pin；
The second end of the third partial pressure unit is connect with the first input end of the driving unit；
The output end of the detection unit is connect with the second input terminal of the driving unit；
The grid of the field-effect tube is connect with the output end of the driving unit, and source electrode is connect with the power pin, drain electrode
Output end as the field-effect tube trigger module；
Wherein, when the power pin is attacked by electrostatic, the second end of the third partial pressure unit is low level, the detection
The output end of unit is high level, and the output end of the driving unit is low level.
5. circuit for electrostatic discharge (ESD) protection as claimed in claim 4, wherein the detection unit includes: capacitor and resistance；
The capacitor and resistance are sequentially connected in series between the power pin and the ground connection pin；
Wherein, output end of the connecting pin of the capacitor and the resistance as the detection unit.
6. circuit for electrostatic discharge (ESD) protection as claimed in claim 4, wherein the driving unit includes: the first field-effect tube,
Two field-effect tube, third field-effect tube and the 4th field-effect tube；
The grid of first field-effect tube is connect with the output end of the detection unit, and source electrode is connect with the ground connection pin,
Drain electrode is connect with the source electrode of second field-effect tube；
The grid of second field-effect tube is connect with the second end of the third partial pressure unit, drain electrode and the third field-effect
The drain electrode of pipe connects；
The source electrode of the third field-effect tube is connect with the power pin, and the source electrode of grid and the 4th field-effect tube connects
It connects；
The grid of 4th field-effect tube is connect with the second end of the third partial pressure unit, drain electrode and the detection unit
Output end connection.
7. circuit for electrostatic discharge (ESD) protection as described in claim 1, wherein the module of releasing includes: buffer cell, reverse phase
Device, the 5th field-effect tube and the 6th field-effect tube；
The buffer cell and the phase inverter are connected in parallel between the output end and the ground connection pin of the division module；
The output end of the buffer cell is connect with the input terminal of the phase inverter, the output end of the phase inverter and the described 5th
The grid of field-effect tube connects；
The source electrode of 5th field-effect tube is connect with the grounding pin, and drain electrode and the source electrode of the 6th field-effect tube connect
It connects；
The drain electrode of 6th field-effect tube is connect with the power pins, and grid is released the input terminal of module as described in.
8. circuit for electrostatic discharge (ESD) protection as claimed in claim 4, wherein the third partial pressure unit includes: the 7th field-effect
Pipe, the 8th field-effect tube and the 9th field-effect tube；
First end of the source electrode of 7th field-effect tube as the third partial pressure unit, is connected to the power pin；
The grid of 7th field-effect tube and drain electrode connect, and are connected to the source electrode of the 8th field-effect tube；
The grid of 8th field-effect tube and drain electrode connect, and are connected to the source electrode of the 9th field-effect tube；
The grid of 9th field-effect tube and drain electrode connect, and the second end as the third partial pressure unit be connected to it is described
The first end of 4th partial pressure unit.
9. circuit for electrostatic discharge (ESD) protection as claimed in claim 4, wherein the 4th partial pressure unit includes: the tenth field-effect
Pipe and the 11st field-effect tube；
The grid of tenth field-effect tube and drain electrode connect, and the first end as the 4th partial pressure unit；
The source electrode of tenth field-effect tube and the grid of the 11st field-effect tube and drain electrode connect；
The source electrode of 11st field-effect tube is connect as the second end of the 4th partial pressure unit with the ground connection pin.
10. circuit for electrostatic discharge (ESD) protection as claimed in any one of claims 1 to 9, wherein the first partial pressure unit packet
It includes: the 12nd field-effect tube, the 13rd field-effect tube and the 14th field-effect tube；
The source electrode of 12nd field-effect tube is connected to the power pin；
The grid of 12nd field-effect tube and drain electrode connect, and are connected to the source electrode of the 13rd field-effect tube；
The grid of 13rd field-effect tube and drain electrode connect, and are connected to the source electrode of the 14th field-effect tube；
The grid of 14th field-effect tube and drain electrode connect, and are connected to second partial pressure unit.
11. the circuit for electrostatic discharge (ESD) protection as described in claims 1 to 10 any one, wherein the second partial pressure unit packet
It includes: the 15th field-effect tube and the 16th field-effect tube；
The grid of 15th field-effect tube and drain electrode connect, and the grid and drain electrode of source electrode and the 16th field-effect tube connect
It connects；
The source electrode of 16th field-effect tube is connect with the ground connection pin.
12. a kind of IC chip, which is characterized in that including electrostatic leakage as claimed in any of claims 1 to 7 in one of claims
Protect circuit.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/105486 WO2020051832A1 (en) | 2018-09-13 | 2018-09-13 | Electrostatic discharge protection circuit and integrated circuit chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109314388A true CN109314388A (en) | 2019-02-05 |
| CN109314388B CN109314388B (en) | 2020-08-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880001540.8A Active CN109314388B (en) | 2018-09-13 | 2018-09-13 | Electrostatic discharge protection circuit and integrated circuit chip |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109314388B (en) |
| WO (1) | WO2020051832A1 (en) |
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| CN110994574A (en) * | 2019-10-15 | 2020-04-10 | 珠海亿智电子科技有限公司 | High-voltage-resistant power supply clamping circuit |
| CN112086946A (en) * | 2020-08-13 | 2020-12-15 | 珠海亿智电子科技有限公司 | High-voltage-resistant clamping circuit with alternating current detection and direct current detection |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2020051832A1 (en) | 2020-03-19 |
| CN109314388B (en) | 2020-08-14 |
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