CN107465180B - A kind of clamp circuit with exchange detection and DC detecting - Google Patents

A kind of clamp circuit with exchange detection and DC detecting Download PDF

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Publication number
CN107465180B
CN107465180B CN201710862176.1A CN201710862176A CN107465180B CN 107465180 B CN107465180 B CN 107465180B CN 201710862176 A CN201710862176 A CN 201710862176A CN 107465180 B CN107465180 B CN 107465180B
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CN
China
Prior art keywords
effect tube
esd
pad
resistance
voltage
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CN201710862176.1A
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Chinese (zh)
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CN107465180A (en
Inventor
严智
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珠海亿智电子科技有限公司
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Publication of CN107465180A publication Critical patent/CN107465180A/en
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage

Abstract

The invention discloses a kind of clamp circuit with exchange detection and DC detecting, which includes: exchange detection module 1, DC detecting module 2, ESD bleeder pipe Mesd.When ESD occurs, the voltage of node AC_OUT be it is low, DC detecting module, which is opened, simultaneously carries out DC detecting to the voltage on PAD.If the voltage of PAD is higher than the value V of settingH, then the output DC_OUT of DC detecting is logically high, MesdIt is turned on and ESD electric current of releasing.During releasing ESD, when the voltage of PAD is lower than the safety value V setLWhen, the output of DC detecting becomes low from height, MesdIt is turned off, end releases to ESD.Compared with traditional clamp circuit, clamp circuit of the invention has the function of DC detecting, the advantage is that and is not easy by false triggering the case where non-ESD.In addition, will not release too low by the voltage of PAD when ESD triggers the circuit, so that normal working condition can still be maintained in PAD circuit when being attacked by ESD.So that circuit of the invention has more flexible be widely applied.

Description

A kind of clamp circuit with exchange detection and DC detecting

Technical field

The present invention relates to the ESD(Electrostatic Discharge in microelectric technique) technical field, especially relate to And a kind of application exchange detection prevents non-ESD false triggering with DC detecting and excessive clamper of releasing after preventing ESD from triggering (clamp) circuit, the technology make clamp circuit have more flexible wider application.

Background technique

The object friction of any two different materials is likely to generate electrostatic.When electronic component manufacture, production, Assembling, storage, is carried and was waited at test, and electrostatic can be accumulated among human body, instrument, storage equipment etc., or even in electronics device Part itself also can stored charge.When electrostatic power sources and other objects contact, there is charge flowings, will generate potential destructive Voltage, electric current and electromagnetic field can smash object therein when serious, and here it is static discharge ESD.

With the continuous development of integrated circuit technique and technological level, transistor and device size on chip are become Small, the integrated level of chip is higher and higher, and to chip ESD protection, more stringent requirements are proposed for these, so that the electrostatic of integrated circuit The design difficulty of discharge protection circuit has reached unprecedented height.

Clamp circuit plays vital role in ESD protection circuit.Traditional clamp circuit such as Fig. 1 institute Show, the time constant of general RC is set as several hundred nanoseconds, its shortcoming is that being easy that (such as hundred nanoseconds is upper by non-esd event Electric speed) false triggering;The field-effect tube M in addition, ESD releasesesdOnce being triggered, then it is easy to draw very low by the voltage of PAD, it can The normal operating conditions of chip can be will affect.Based on disadvantage mentioned above, the application of clamp circuit shown in FIG. 1 is by certain limit System.However in some special applications or special chip pin, for example, it is cracking for power supply electrifying speed special The pin of application demand or open drain, traditional clamp circuit are easy to be influenced the function of chip by false triggering.Cause This, designs the clamp protection circuit with more flexible broader applications, and the development to entire microelectronics is very significant 's.

Summary of the invention

The purpose of the present invention is to provide a kind of structure of clamp circuit, which is added using exchange detection The method of upper DC detecting effectively prevent non-ESD false triggering and releases excessively after preventing ESD from triggering, which makes clamp Circuit has more flexible wider application.

To achieve the goals above, clamp circuit provided by the invention includes to exchange detection module, DC detecting module, ESD releases field-effect tube Mesd.The upper termination PAD for exchanging detection module exchanges the lower termination GND of detection module, exchange detection mould The output terminals A C_OUT of block connects the input terminal of DC detecting module;The upper termination PAD of DC detecting module, DC detecting module Lower termination GND, the output end of the input termination exchange detection module of DC detecting module, the output end DC_ of DC detecting module OUT meets ESD and releases field-effect tube MesdGrid;Field-effect tube MesdDrain terminal meet PAD, field-effect tube MesdSource meet GND, Field-effect tube MesdGrid connect the output end of DC detecting module.

According to an embodiment of the invention, the exchange detection module includes resistance R1 and capacitor C1, a termination of resistance R1 The grid of the input terminal field-effect tube MP1 of the other end connection capacitor C1 and DC detecting module of PAD, resistance R1, capacitor C1's The other end is grounded GND.

According to an embodiment of the invention, the DC detecting module include resistance R2, R3, R4, R5, field-effect tube MP1, MN1, MN2, phase inverter INV.The source of field-effect tube MP1 is connected to PAD, and the grid of field-effect tube MP1 is connected to exchange detection The tie point of the R1 and C1 of module, the drain terminal connecting resistance R2 of field-effect tube MP1;The leakage of a termination field-effect tube MP1 of resistance R2 End, one end of another terminating resistor R3 of resistance R2 and the drain terminal of field-effect tube MN1;One end of a terminating resistor R4 of resistance R3 With the source of field-effect tube MN1 and the grid of field-effect tube MN2;One end of a terminating resistor R3 of resistance R4 and field-effect tube The other end of the source of MN1 and the grid of field-effect tube MN2, resistance R4 is grounded GND;The source of field-effect tube MN1 connects R3 With the grid of R4 and field-effect tube MN2, the drain terminal of field-effect tube MN1 connects R2 and R3, and the grid connection of field-effect tube MN1 is anti- The output end of phase device INV and the grid of field-effect tube Mesd;The source connection ground GND of field-effect tube MN2, field-effect tube MN2's Drain terminal connects the input terminal of R5 and phase inverter INV, the source of the grid connection R3 and R4 and field-effect tube MN1 of field-effect tube MN2 End;A termination PAD of R5, the drain terminal of another termination field-effect tube MN2 of R5 and the input terminal of phase inverter INV;Phase inverter INV's One end of input termination R5 and the drain terminal of field-effect tube MN2, the grid of the output termination field-effect tube MN1 of phase inverter INV and field The grid of effect pipe Mesd.

According to an embodiment of the invention, the drain terminal of field-effect tube Mesd meets PAD, the source of field-effect tube Mesd is grounded GND, The grid of field-effect tube Mesd connects the output end of DC detecting module, the i.e. grid of the output end of phase inverter INV and field-effect tube MN1 Pole.

According to the technique and scheme of the present invention, with below the utility model has the advantages that since clamp circuit of the invention has direct current Detection function the advantage is that and be not easy by false triggering the case where non-ESD, in addition, when ESD triggers the circuit, it will not be by PAD Current potential draw too low, PAD circuit when being attacked by ESD can be made to can still work normally.Therefore, the clamp circuit It is widely applied with more flexible.

Detailed description of the invention

It is specifically described the present invention below with reference to attached drawing and in conjunction with example, advantages of the present invention and implementation will More obvious and clear, wherein content only for the purpose of explanation of the present invention shown in attached drawing, appoints of the invention without constituting Limitation in what meaning, in the accompanying drawings.

Fig. 1 is prior art power clamp circuit diagram.

Fig. 2 is clamp circuit schematic diagram of the present invention.

Fig. 3 is clamp circuit specific embodiment schematic diagram of the present invention.

Specific embodiment

As shown in Fig. 2, there is the present invention exchange detection, which to include one with the clamp circuit of DC detecting, exchanges detection module U1, a DC detecting module U2, ESD release field-effect tube Mesd.Its connection relationship is as follows: the upper end of exchange detection module U1 PAD is met, the lower termination GND of detection module U1 is exchanged, the output terminals A C_OUT of exchange detection module U1 meets DC detecting module U2 Input terminal;The lower termination GND of the upper termination PAD of DC detecting module U2, DC detecting module U2, DC detecting module U2's The output end of input termination exchange detection module U1, the output end DC_OUT of DC detecting module U2 meet ESD and release field-effect tube MesdGrid;Field-effect tube MesdDrain terminal meet PAD, field-effect tube MesdSource meet GND, field-effect tube MesdGrid connect directly Flow the output end of detection module U2.

When circuit works normally, if the voltage on PAD is constant supply voltage VDD, the voltage of node AC_OUT For the voltage on PAD, DC detecting module is turned off, and output node DC_OUT is low, field-effect tube MesdIt is turned off;If just Often when work, the digital logic signal of overturning is transmitted on PAD, exchange detects that alternating voltage, the voltage of node AC_OUT are to patrol Collect low, unlatching DC detecting module.But since the voltage peak of PAD is not big enough, the output node DC_OUT of DC detecting module It is still low, bleeder pipe MesdIt is turned off.

When ESD occurs, exchange detection module detects the ESD voltage on PAD, and the voltage of node AC_OUT is relative to PAD To be low, DC detecting module opens and carries out DC detecting to the voltage of PAD.If the voltage of PAD is higher than the value V of settingH, then directly The output DC_OUT for flowing detection module is logically high, field-effect tube MesdIt is turned on and ESD electric current of releasing.In addition, circuit is occurring When ESD, DC detecting module has the function of sluggishness, i.e. scene effect pipe MesdIt is turned on when releasing ESD electric current, the voltage of PAD It gradually decreases, when the voltage of PAD is lower than the safety value V setL(VL<VH) when, the logic for exporting DC_OUT becomes low from height, field Effect pipe MesdIt is turned off, end releases to ESD.

As shown in Figure 3.The present invention has exchange detection with the clamp circuit specific embodiment of DC detecting including exchanging inspection Survey module 1, DC detecting module 2 and ESD release field-effect tube Mesd.The device connection relationship of circuit is as follows: the one of resistance R1 Terminate PAD, the grid of the input terminal field-effect tube MP1 of the other end connection capacitor C1 and DC detecting module 2 of resistance R1;Capacitor A terminating resistor R1 and DC detecting module 2 input terminal field-effect tube MP1 grid, the other end of C1 is grounded GND;Field effect Should the source of pipe MP1 be connected to PAD, the grid of field-effect tube MP1 is connected to the tie point of exchange detection module R1 and C1, field effect Should pipe MP1 drain terminal connecting resistance R2;The drain terminal of a termination field-effect tube MP1 of resistance R2, another terminating resistor R3 of resistance R2 One end and field-effect tube MN1 drain terminal;One end of a terminating resistor R4 of resistance R3 and source and the field of field-effect tube MN1 The grid of effect pipe MN2;One end of a terminating resistor R3 of resistance R4 and the source of field-effect tube MN1 and field-effect tube MN2 Grid, the other end of resistance R4 is grounded GND;The grid of the source connection R3 and R4 and field-effect tube MN2 of field-effect tube MN1 Pole, the drain terminal of field-effect tube MN1 connect R2 and R3, the output end of the grid connection phase inverter INV of field-effect tube MN1 and field-effect The grid of pipe Mesd;The drain terminal connection R5's and phase inverter INV of source connection the ground GND, field-effect tube MN2 of field-effect tube MN2 Input terminal, the source of the grid connection R3 and R4 and field-effect tube MN1 of field-effect tube MN2;A termination PAD of R5, R5's is another The drain terminal of one termination field-effect tube MN2 and the input terminal of phase inverter INV;One end of the input termination R5 of phase inverter INV and field effect Should pipe MN2 drain terminal, phase inverter INV output termination field-effect tube MN1 grid and field-effect tube Mesd grid;Field-effect The drain terminal of pipe Mesd meets PAD, and the source of field-effect tube Mesd is grounded GND, and the grid of field-effect tube Mesd connects the output of phase inverter The grid at end and field-effect tube MN1.

When circuit works normally, the voltage of node AC_OUT is the voltage on PAD, the field effect in DC detecting module 2 Should pipe MP1 be turned off, the voltage of node n1 be it is low, field-effect tube MN2 is turned off, and the voltage of node n2 is height, phase inverter it is defeated Egress DC_OUT is low, bleeder pipe MesdIt is turned off;The digital logic signal that overturning is transmitted when working if normal, on PAD, when When PAD rises to VDD from 0V, exchange detection module 1 detects the voltage change of PAD, and the voltage of node AC_OUT is logic low, Field-effect tube MP1 in DC detecting module 2 is turned on, and the voltage of node n1 is VDD × R4/ (R2+R3+R4), but due to PAD Voltage peak it is not big enough, field-effect tube MN2 is still turned off, and the voltage of node n2 is height, the output node DC_OUT of phase inverter To be low, bleeder pipe MesdIt is turned off.

When ESD occurs, exchange detection module 1 detects the ESD voltage on PAD, and the voltage of node AC_OUT is relative to PAD To be low, the field-effect tube MP1 in DC detecting module 2 is turned on, and the voltage of node n1 is Vesd × R4/ (R2+R3+R4).Its Middle Vesd is voltage when ESD occurs on PAD, and the peak value of general Vesd is up to more than ten V, and the voltage of node n1 is imitated greater than field at this time Should pipe MN2 cut-in voltage, field-effect tube MN2 is turned on, the voltage of node n2 be it is low, the output node DC_OUT of phase inverter is Height, field-effect tube MesdIt is turned on and ESD electric current of releasing.Meanwhile the output of phase inverter is connected to the grid of field-effect tube MN1, field effect Should pipe MN1 be turned on, resistance R3 is short-circuited, so that voltage Vesd × R4/ (R2+R4) of node n1 is further increased, promotes field The unlatching of effect pipe MN2.DC detecting module has the function of sluggishness, i.e. scene effect pipe MesdIt is turned on ESD electric current of releasing When, the voltage Vesd of PAD is gradually decreased, when voltage Vesd × R4/ (R2+R4) of node n1 is lower than the unlatching of field-effect tube MN2 When voltage, the voltage of node n2 is height, and the logic for exporting DC_OUT becomes low from height, and end releases to ESD.On the other hand, After exchange detection module 1 detects alternating voltage, the voltage of node AC_OUT is gradually increasing by low as height, as node AC_OUT Voltage rise to when turning off field-effect tube MP1, the voltage of node n1 be it is low, field-effect tube MN2 is turned off, the electricity of node n2 Pressure is height, and the output node DC_OUT of phase inverter is low, field-effect tube MesdIt is turned off, terminates releasing for ESD.

Above example is only preferred examples of the present invention son, and the design concept of the present invention is not limited to this, all at this Within the spirit and principle of invention, any modification, equivalent replacement, improvement and so on should be included in protection model of the invention Within enclosing.

Claims (5)

1. a kind of clamp circuit with exchange detection and DC detecting, which is characterized in that including exchanging detection module, direct current inspection It surveys module and ESD to release field-effect tube Mesd, exchanges the upper termination PAD of detection module, exchange the lower termination GND of detection module, The output terminals A C_OUT of exchange detection module connects the input terminal of DC detecting module;The upper termination PAD of DC detecting module, directly Flow the lower termination GND of detection module, the output terminals A C_OUT of the input termination exchange detection module of DC detecting module, direct current The output end DC_OUT of detection module meets ESD and releases the grid of field-effect tube Mesd;ESD releases the drain terminal of field-effect tube Mesd Meet PAD, the release source of field-effect tube Mesd of ESD meets GND, and the release grid of field-effect tube Mesd of ESD connects DC detecting module Output end DC_OUT;The exchange detection module includes resistance R1 and capacitor C1, and the one of resistance R1 terminates PAD, resistance R1's The other end connects capacitor C1, and the other end of capacitor C1 is grounded GND;The DC detecting module includes resistance R2, R3, R4, R5, field Effect pipe MP1, MN1, MN2, phase inverter INV, the source of field-effect tube MP1 are connected to PAD, the grid connection of field-effect tube MP1 To the tie point of the resistance R1 and capacitor C1 of exchange detection module, the drain terminal connecting resistance R2 of field-effect tube MP1;One end of resistance R2 Connect the drain terminal of field-effect tube MP1, one end of another terminating resistor R3 of resistance R2 and the drain terminal of field-effect tube MN1;Resistance R3's The grid of one end of one terminating resistor R4 and the source of field-effect tube MN1 and field-effect tube MN2;A terminating resistor of resistance R4 The other end of the grid of one end of R3 and the source of field-effect tube MN1 and field-effect tube MN2, resistance R4 is grounded GND;Field-effect The grid of source connection the resistance R3 and resistance R4 and field-effect tube MN2 of pipe MN1, the drain terminal of field-effect tube MN1 connect resistance The output end and ESD of the grid connection phase inverter INV of R2 and resistance R3, field-effect tube MN1 are released the grid of field-effect tube Mesd; The input terminal of drain terminal connection the resistance R5 and phase inverter INV of source connection the ground GND, field-effect tube MN2 of field-effect tube MN2, field The source of grid connection the resistance R3 and resistance R4 and field-effect tube MN1 of effect pipe MN2;A termination PAD of resistance R5, resistance The drain terminal of another termination field-effect tube MN2 of R5 and the input terminal of phase inverter INV;The input terminating resistor R5's of phase inverter INV The drain terminal of one end and field-effect tube MN2, the grid and ESD of the output termination field-effect tube MN1 of phase inverter INV are released field-effect tube The grid of Mesd.
2. a kind of clamp circuit with exchange detection and DC detecting according to claim 1, it is characterised in that: ESD The drain terminal of field-effect tube of releasing Mesd meets PAD, and ESD releases the source ground connection GND of field-effect tube Mesd, and ESD releases field-effect tube The grid of Mesd connects the output end of phase inverter and the grid of field-effect tube MN1.
3. a kind of clamp circuit with exchange detection and DC detecting according to claim 1 or 2, feature exist In: the clamp circuit, if exchange detection module does not detect alternating voltage, exchanges detection module when chip works normally The voltage of output terminals A C_OUT be voltage on PAD, DC detecting module is turned off, the output end of DC detecting module DC_OUT be it is low, the ESD field-effect tube Mesd that releases is turned off;If exchange detection module detects that alternating voltage examines exchange Survey module output terminals A C_OUT voltage be it is low, DC detecting module is turned on, but since the crest voltage on PAD is general For VDD, much smaller than crest voltage when occurring ESD, therefore the output end DC_OUT of DC detecting module be it is low, ESD releases field Effect pipe Mesd is turned off.
4. a kind of clamp circuit with exchange detection and DC detecting according to claim 1 or 2, feature exist In: for the clamp circuit when ESD occurs, exchange detection module detects the ESD voltage on PAD, exchanges the output of detection module Hold AC_OUT voltage relative to PAD be it is low, DC detecting module open simultaneously to the voltage of PAD carry out DC detecting;If PAD Voltage be higher than the value VH of setting, then the output end DC_OUT of DC detecting module is logically high, and ESD releases field-effect tube Mesd is turned on and ESD electric current of releasing.
5. a kind of clamp circuit with exchange detection and DC detecting according to claim 1 or 2, feature exist In: the clamp circuit when ESD occurs, DC detecting module has the function of sluggishness, i.e., releases field-effect tube Mesd in ESD It being turned on when releasing ESD electric current, the voltage of PAD gradually decreases, as safety value VL of the voltage of PAD lower than setting, direct current inspection The logic of output end DC_OUT for surveying module becomes low from height, and the ESD field-effect tube Mesd that releases is turned off, and ESD is let out in end It puts.
CN201710862176.1A 2017-09-21 2017-09-21 A kind of clamp circuit with exchange detection and DC detecting CN107465180B (en)

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CN201710862176.1A CN107465180B (en) 2017-09-21 2017-09-21 A kind of clamp circuit with exchange detection and DC detecting

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Application Number Priority Date Filing Date Title
CN201710862176.1A CN107465180B (en) 2017-09-21 2017-09-21 A kind of clamp circuit with exchange detection and DC detecting

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CN107465180B true CN107465180B (en) 2019-03-26

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CN109301803A (en) * 2018-10-10 2019-02-01 合肥宽芯电子技术有限公司 A kind of electrostatic impedor structure for the electrostatic protection that high-low voltage is general

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JP2005235947A (en) * 2004-02-18 2005-09-02 Fujitsu Ltd Electrostatic discharge protective circuit
CN101442869B (en) * 2007-11-23 2011-08-24 上海华虹Nec电子有限公司 Dynamic detection electrostatic protection circuit
JP2014132717A (en) * 2013-01-07 2014-07-17 Seiko Epson Corp Electrostatic discharge protection circuit and semiconductor circuit device
JP6237183B2 (en) * 2013-12-09 2017-11-29 セイコーエプソン株式会社 Electrostatic protection circuit and semiconductor integrated circuit device

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