CN101436606A - 非易失性半导体存储器件 - Google Patents

非易失性半导体存储器件 Download PDF

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Publication number
CN101436606A
CN101436606A CNA2008101740296A CN200810174029A CN101436606A CN 101436606 A CN101436606 A CN 101436606A CN A2008101740296 A CNA2008101740296 A CN A2008101740296A CN 200810174029 A CN200810174029 A CN 200810174029A CN 101436606 A CN101436606 A CN 101436606A
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CN
China
Prior art keywords
layer
recording material
memory
metal wiring
mentioned
Prior art date
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Pending
Application number
CNA2008101740296A
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English (en)
Chinese (zh)
Inventor
木下胜治
寺尾元康
松冈秀行
屉子佳孝
木村嘉伸
岛明生
田井光春
高浦则克
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Hitachi Ltd
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Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN101436606A publication Critical patent/CN101436606A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N79/00—Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
CNA2008101740296A 2007-11-12 2008-11-12 非易失性半导体存储器件 Pending CN101436606A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007292723A JP2009123725A (ja) 2007-11-12 2007-11-12 不揮発性半導体記憶装置
JP2007292723 2007-11-12

Publications (1)

Publication Number Publication Date
CN101436606A true CN101436606A (zh) 2009-05-20

Family

ID=40674792

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008101740296A Pending CN101436606A (zh) 2007-11-12 2008-11-12 非易失性半导体存储器件

Country Status (5)

Country Link
US (1) US20090140233A1 (cg-RX-API-DMAC7.html)
JP (1) JP2009123725A (cg-RX-API-DMAC7.html)
KR (1) KR20090049028A (cg-RX-API-DMAC7.html)
CN (1) CN101436606A (cg-RX-API-DMAC7.html)
TW (1) TW200939469A (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465694B (zh) * 2013-09-25 2018-10-09 爱思开海力士有限公司 电子设备
CN108986859A (zh) * 2017-05-30 2018-12-11 希捷科技有限公司 具有可重写原地存储器的数据存储设备
CN110335942A (zh) * 2019-07-08 2019-10-15 中国科学院上海微系统与信息技术研究所 一种相变存储器及其制作方法
US20220077261A1 (en) * 2020-09-08 2022-03-10 Samsung Display Co., Ltd. Display device and manufacturing method thereof
WO2022109973A1 (zh) * 2020-11-27 2022-06-02 江苏时代全芯存储科技股份有限公司 相变存储器的制备方法和相变存储器

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283486A (ja) * 2008-05-19 2009-12-03 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP5550239B2 (ja) * 2009-01-26 2014-07-16 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
JP5439147B2 (ja) 2009-12-04 2014-03-12 株式会社東芝 抵抗変化メモリ
JP5420436B2 (ja) * 2010-01-15 2014-02-19 株式会社日立製作所 不揮発性記憶装置およびその製造方法
US8017433B2 (en) * 2010-02-09 2011-09-13 International Business Machines Corporation Post deposition method for regrowth of crystalline phase change material
JP5161911B2 (ja) 2010-03-25 2013-03-13 株式会社東芝 抵抗変化メモリ
JP5641779B2 (ja) * 2010-05-18 2014-12-17 株式会社日立製作所 不揮発性記憶装置およびその製造方法
JP5566217B2 (ja) * 2010-07-30 2014-08-06 株式会社東芝 不揮発性記憶装置
JP5674548B2 (ja) * 2011-04-28 2015-02-25 株式会社日立製作所 半導体記憶装置
CN103137646A (zh) * 2013-03-15 2013-06-05 中国科学院微电子研究所 用于双极型阻变存储器交叉阵列集成方式的选通器件单元
US8981334B1 (en) * 2013-11-01 2015-03-17 Micron Technology, Inc. Memory cells having regions containing one or both of carbon and boron
US9876054B1 (en) 2016-07-27 2018-01-23 Western Digital Technologies, Inc. Thermal management of selector
US10008665B1 (en) 2016-12-27 2018-06-26 Intel Corporation Doping of selector and storage materials of a memory cell
KR102638628B1 (ko) 2017-10-20 2024-02-22 삼성전자주식회사 가변 저항 메모리 소자 및 이의 제조 방법
KR102722150B1 (ko) * 2019-07-23 2024-10-28 삼성전자주식회사 가변 저항 메모리 장치 및 그 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
JP4377816B2 (ja) * 2003-03-18 2009-12-02 株式会社東芝 相変化メモリ装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465694B (zh) * 2013-09-25 2018-10-09 爱思开海力士有限公司 电子设备
CN108986859A (zh) * 2017-05-30 2018-12-11 希捷科技有限公司 具有可重写原地存储器的数据存储设备
CN108986859B (zh) * 2017-05-30 2022-04-19 希捷科技有限公司 具有可重写原地存储器的数据存储设备
CN110335942A (zh) * 2019-07-08 2019-10-15 中国科学院上海微系统与信息技术研究所 一种相变存储器及其制作方法
US20220077261A1 (en) * 2020-09-08 2022-03-10 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US11715739B2 (en) * 2020-09-08 2023-08-01 Samsung Display Co., Ltd. Display device and manufacturing method thereof
WO2022109973A1 (zh) * 2020-11-27 2022-06-02 江苏时代全芯存储科技股份有限公司 相变存储器的制备方法和相变存储器

Also Published As

Publication number Publication date
US20090140233A1 (en) 2009-06-04
JP2009123725A (ja) 2009-06-04
TW200939469A (en) 2009-09-16
KR20090049028A (ko) 2009-05-15

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Open date: 20090520