CN101390193B - 奈米结构微型化的方法 - Google Patents

奈米结构微型化的方法 Download PDF

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Publication number
CN101390193B
CN101390193B CN2006800500646A CN200680050064A CN101390193B CN 101390193 B CN101390193 B CN 101390193B CN 2006800500646 A CN2006800500646 A CN 2006800500646A CN 200680050064 A CN200680050064 A CN 200680050064A CN 101390193 B CN101390193 B CN 101390193B
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rice
base material
miniization
tubular pore
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CN101390193A (zh
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林明农
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Cereal-Derived Products (AREA)
  • Magnetic Record Carriers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2006800500646A 2005-12-30 2006-12-28 奈米结构微型化的方法 Expired - Fee Related CN101390193B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US75461405P 2005-12-30 2005-12-30
US60/754,614 2005-12-30
US11/645,526 US8318520B2 (en) 2005-12-30 2006-12-27 Method of microminiaturizing a nano-structure
US11/645,526 2006-12-27
PCT/US2006/049394 WO2008002326A2 (en) 2005-12-30 2006-12-28 A method of microminiaturizing a nano-structure

Publications (2)

Publication Number Publication Date
CN101390193A CN101390193A (zh) 2009-03-18
CN101390193B true CN101390193B (zh) 2011-03-16

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CN2006800500646A Expired - Fee Related CN101390193B (zh) 2005-12-30 2006-12-28 奈米结构微型化的方法

Country Status (6)

Country Link
US (1) US8318520B2 (ko)
EP (1) EP1974369A4 (ko)
JP (1) JP5372520B2 (ko)
KR (1) KR20080083692A (ko)
CN (1) CN101390193B (ko)
WO (1) WO2008002326A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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CN100483613C (zh) * 2005-02-24 2009-04-29 鸿富锦精密工业（深圳）有限公司 量子点制作方法
TWI307677B (en) * 2006-07-18 2009-03-21 Applied Res Lab Method and device for fabricating nano-structure with patterned particle beam
US8349546B2 (en) * 2007-06-28 2013-01-08 Ming-Nung Lin Fabricating method of nano-ring structure by nano-lithography
JP5345078B2 (ja) * 2010-01-22 2013-11-20 公益財団法人神奈川科学技術アカデミー 脂質二重膜、それを形成するために用いられる自己支持性フィルム及びそれを具備するマイクロ流路デバイス
RU2495511C2 (ru) * 2011-09-02 2013-10-10 Федеральное государственное бюджетное учреждение " Петербургский институт ядерной физики им. Б.П. Константинова" Способ получения массивов наноколец
US9303310B2 (en) * 2013-10-15 2016-04-05 International Business Machines Corporation Nanofluidic sensor comprising spatially separated functional sensing components
US11174545B2 (en) 2019-11-06 2021-11-16 International Business Machines Corporation Oblique deposition for quantum device fabrication

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US6515339B2 (en) * 2000-07-18 2003-02-04 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
CN1437715A (zh) * 2000-04-18 2003-08-20 奥布杜卡特公司 衬底及与该结构的制造相关的工艺
CN1449510A (zh) * 2000-08-31 2003-10-15 尤尼瑟驰有限公司 纳米电子电路的制造
US6656568B1 (en) * 1999-05-28 2003-12-02 The Regents Of The University Of Colorado Ordered arrays of nanoclusters
US6952055B2 (en) * 1999-10-29 2005-10-04 California Institute Of Technology Intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same

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US4599790A (en) * 1985-01-30 1986-07-15 Texas Instruments Incorporated Process for forming a T-shaped gate structure
US5225131A (en) * 1989-12-07 1993-07-06 Daikin Industries, Ltd. Process for producing multilayer polytetrafluoroethylene porous membrane and semisintered polytetrafluoroethylene multilayer structure
US5420067A (en) * 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
US5480843A (en) * 1994-02-10 1996-01-02 Samsung Display Devices Co., Ltd. Method for making a field emission device
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure
US5621272A (en) * 1995-05-30 1997-04-15 Texas Instruments Incorporated Field emission device with over-etched gate dielectric
KR100339186B1 (ko) * 1998-09-28 2002-05-31 포만 제프리 엘 기판상에서 패턴을 규정하는 장치 및 방법
JP2000173444A (ja) * 1998-12-04 2000-06-23 Agency Of Ind Science & Technol 電界放出型冷陰極及びその製造方法
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JP2001126609A (ja) * 1999-10-26 2001-05-11 Futaba Corp 電子放出素子及び蛍光発光型表示器
CA2404296A1 (en) * 2000-03-22 2001-09-27 University Of Massachusetts Nanocylinder arrays
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US6656568B1 (en) * 1999-05-28 2003-12-02 The Regents Of The University Of Colorado Ordered arrays of nanoclusters
US6952055B2 (en) * 1999-10-29 2005-10-04 California Institute Of Technology Intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same
CN1437715A (zh) * 2000-04-18 2003-08-20 奥布杜卡特公司 衬底及与该结构的制造相关的工艺
US6515339B2 (en) * 2000-07-18 2003-02-04 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
CN1449510A (zh) * 2000-08-31 2003-10-15 尤尼瑟驰有限公司 纳米电子电路的制造

Also Published As

Publication number Publication date
EP1974369A2 (en) 2008-10-01
US8318520B2 (en) 2012-11-27
WO2008002326A3 (en) 2008-05-15
CN101390193A (zh) 2009-03-18
JP2009522785A (ja) 2009-06-11
EP1974369A4 (en) 2010-11-24
WO2008002326A2 (en) 2008-01-03
KR20080083692A (ko) 2008-09-18
US20070161238A1 (en) 2007-07-12
JP5372520B2 (ja) 2013-12-18

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