CN101382414A - 基板保持装置及基板分离方法 - Google Patents

基板保持装置及基板分离方法 Download PDF

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CN101382414A
CN101382414A CNA2008102137910A CN200810213791A CN101382414A CN 101382414 A CN101382414 A CN 101382414A CN A2008102137910 A CNA2008102137910 A CN A2008102137910A CN 200810213791 A CN200810213791 A CN 200810213791A CN 101382414 A CN101382414 A CN 101382414A
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井上勇辉
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Omron Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract

本发明涉及一种基板保持装置,其能够充分进行工作台和基板的接触面上的除电。利用来自设置于工作台表面的吸附槽(3)的吸引,将载置于工作台(2)的基板(w)进行真空吸附保持,在进行完规定的处理后,解除真空吸附,并且自设置于工作台表面侧的吹出口(7)将离子化气体吹送到基板(w)的背面进行除电。

Description

基板保持装置及基板分离方法
技术领域
本发明涉及基板处理装置所使用的基板保持装置及将处理后的基板分离的方法,该基板处理装置对玻璃基板等基板进行曝光、显影等处理或进行基板表面图案的尺寸计测及特性检查等处理。
背景技术
在上述基板处理装置中,将搬入并载置于工作台上的基板进行真空吸附保持,若完成规定的处理,则解除真空吸附,将处理完的基板从工作台分离并搬出,但是,基板因带电而被牢固地吸附于工作台上,在该状态下,若强行将基板取出,则基板可能会产生破损。因此,可采取如下方法,对工作台表面实施防带电处理,或者如专利文献1所公开的那样,自离子产生器(イオナイザ)吹出离子化的气体进行除电。
专利文献1:(日本)特开2003-100821号公报
但是,在对工作台表面实施防带电处理的前一种方法中,虽然刚开始可以发挥期望的防带电功能,但是,随着进行重复处理,带电量逐渐增加,将导致不能发挥期望的功能,从而需要再次实施防带电处理,在此期间需要强制中断基板处理。
另外,在自离子产生器吹出离子化气体而进行除电的后一种方法中,由于从上方将离子化气体吹送到载置于工作台的基板上,因而不能够充分进行工作台和基板的接触面上的除电。
发明内容
本发明是着眼于上述问题点而作出的,其目的在于提供一种基板保持装置及基板分离方法,能够充分地进行工作台和基板的接触面上的除电。
(1)本发明的基板保持装置具备载置基板的工作台,在所述工作台的表面侧设置有向基板的背面吹送来自离子产生器的离子化气体而进行除电的吹出口。
工作台既可为可移动式,也可为固定式。
离子产生器既可与工作台一体设置,也可与工作台分体设置。
吹出口既可形成于工作台本体,也可将形成有吹出口的配管等设置于工作台上。
根据本发明的基板保持装置,利用自工作台表面侧的吹出口吹出的离子化气体,将基板背面与工作台的接触面上的带电电荷中和,从而可切实地进行除电,由此,不会使处理完的基板产生静电破坏等,能够顺畅地将其从工作台剥离并搬出。
(2)在本发明的基板保持装置的一实施方式中,在所述工作台的表面具备吸附保持所述基板的吸附槽。
根据该实施方式,通过利用吸附槽吸附载置于工作台的基板,能够稳定地对其进行保持。
(3)在本发明的基板保持装置的优选实施方式中,将与所述离子产生器连通连接的配管埋设在形成于所述工作台表面的槽内,且在该配管上形成所述吹出口。
根据该实施方式,能够经由配管将来自离子产生器的离子化气体有效地吹送到基板的背面而进行除电。
(4)在上述(3)的实施方式中,也可以将所述离子产生器分别与所述配管的两端连通连接。
根据该实施方式,由于从配管的两端供给离子化气体,因此,即使配管较长,也能够自吹出口均匀地吹出离子化气体,从而能够均匀且切实地进行基板背面的除电。
(5)在本发明的基板保持装置的其它实施方式中,将自所述工作台提升所述基板的多个提升销进退自如地配置在所述工作台上。
根据该实施方式,利用离子化气体的吹送进行除电之后,使位于退入待机状态的提升销突出到工作台上,由此能够无阻力地提升基板并将其顺畅地搬出。该情况下,通过以合适的压力自吹出口吹送离子化气体,从而可更加顺畅地提升基板。
(6)本发明的基板分离方法包括如下步骤:将离子化气体从设于载置有基板的工作台表面的吹出口吹出并吹送到所述基板背面而进行除电;从工作台上取下所述基板。
根据本发明的基板分离方法,利用自工作台的吹出口吹出的离子化气体,将基板背面与工作台的接触面上的带电电荷中和,从而可切实地进行除电,由此,不会使处理完的基板产生静电破坏等,能够将其顺畅地从工作台上剥离而进行分离。
根据本发明,能够充分进行工作台和基板的接触面上的除电,并能够将处理完的基板从工作台上顺畅地剥离并搬出而不发生静电破坏等。
附图说明
图1是基板保持装置的平面图;
图2是基板保持装置的纵剖侧视图;
图3是基板保持装置的立体图;
图4是离子化气体引出部的纵剖面图;
图5是其它实施方式的使用配管的离子化气体引出部的纵剖面图;
图6是又一实施方式的使用配管的离子化气体引出部的纵剖面图;
图7是其它实施方式的使用配管的离子化气体引出部的纵剖面图。
附图标记说明
2     工作台
3     吸附槽
4     槽
5     配管
6     离子产生器
7     吹出口
9     提升销
w     基板
具体实施方式
下面,通过附图对本发明的实施方式进行详细说明。
图1~图3表示用于基板检查装置的基板保持装置1,该基板检查装置中,用照像机等从上方对玻璃基板等基板w进行拍摄,对形成于基板表面的图案的尺寸等进行图像处理并检查。
该基板保持装置1为将基板w以水平姿势载置保持的装置,其具备由铝材等形成为矩形的沿水平方向可移动的工作台2。
在工作台2上面(表面)的基板载置区域内形成有内外两条矩形环状的吸附槽3,位于适当位置的吸附口与未图示的真空装置连通连接。
另外,在工作台2上面的基板载置区域内平行地形成有多条(在该例中为6条)槽4。如图2所示,在各槽4中埋设有配管5,并且各配管5的两端贯通并延伸到工作台下方,其延伸端与分别设置于工作台2左右的离子产生器6连通连接。
如图4所示,上述配管5利用由不锈钢及乙烯等构成的圆管等,如图1及图2所示,在其上面以面对上述槽4的开口侧的方式,沿配管长度方向在多个部位形成有吹出口7。
上述构成为横长杆状,上述配管5的下方延伸端与并列形成于离子产生器6侧面的离子化气体喷出口8连通连接,将由离子产生器6产生的离子化气体、在该例中为离子化空气自各喷出口8向配管5供给,并在工作台2的上面自多个吹出口7吹出。
并且,在工作台2的基板载置区域内的多个部位进退自如地分散配置有提升销9。各提升销9与工作台2下方未图示的驱动升降机构连结,将全部提升销9横跨从工作台上面退入的退避位置和从工作台上面突出的作用位置并在上下方向滑动驱动。
基板保持装置1如上所述构成,在进行基板w的图案尺寸等计测处理时,将搬入的基板w定位载置于工作台2上,并控制真空装置动作,使规定的负压作用于吸附槽3,从而将载置的基板w真空吸附保持在规定的位置。此时,提升销9退入到退避位置,并且离子化空气自离子产生器6的供给停止。
基板w的处理结束后,在吸附槽3的真空吸附被解除而恢复为大气压,并且,开始离子化空气自离子产生器6的供给,将离子化空气自配管5的吹出口7向基板w的背面吹送并供给,从而利用离子化空气将工作台2和基板w的接触面上的带电电荷中和(除电)。
此后,使全部提升销9突出到作用位置,由此将基板w提升到工作台上,此时产生的静电也通过离子化空气被除去。
被提升的处理完的基板w利用未图示的卸载机构等搬出。
(其它实施方式)
(1)如图5所示,也可以将离子化气体的吹出口7沿圆形配管5的圆周方向形成在多个例如两个部位。
(2)如图6所示,也可以如下实施,即由方管形成供给离子化气体的配管5,并以具备吹出口7的上面与工作台上面大致共面的方式埋设于槽4内来实施。
(3)如图7所示,也可以如下实施,即以自工作台上面大幅度没入的方式设置由方管构成的配管5来实施。由此,自吹出口7吹出的离子化气体通过形成于槽4上部的较长空隙c扩散流动并均匀地吹出。
(4)通过将上述吸附槽3及配管5设置为同心圆状,也可以容易地应用于圆形基板w。
工业实用性
本发明适用于保持对基板进行处理的基板处理装置上的基板。

Claims (6)

1、一种基板保持装置,其特征在于,具备载置基板的工作台,在所述工作台的表面侧设置有向基板的背面吹送来自离子产生器的离子化气体而进行除电的吹出口。
2、如权利要求1所述的基板保持装置,其特征在于,在所述工作台的表面具备吸附保持所述基板的吸附槽。
3、如权利要求1或2所述的基板保持装置,其特征在于,将与所述离子产生器连通连接的配管埋设在形成于所述工作台表面的槽内,并在该配管上形成所述吹出口。
4、如权利要求3所述的基板保持装置,其特征在于,将所述离子产生器分别与所述配管的两端连通连接。
5、如权利要求1~4中任一项所述的基板保持装置,其特征在于,将从所述工作台提升所述基板的多个提升销进退自如地配置在所述工作台上。
6、一种基板分离方法,其特征在于,包括如下步骤:
将离子化气体从设于载置有基板的工作台表面的吹出口吹出并吹送到所述基板背面而进行除电;
从工作台上取下所述基板的步骤。
CNA2008102137910A 2007-09-06 2008-09-08 基板保持装置及基板分离方法 Pending CN101382414A (zh)

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CN104803607A (zh) * 2012-04-17 2015-07-29 安瀚视特控股株式会社 显示器用玻璃基板及其制造方法
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CN102014568B (zh) * 2009-09-04 2012-11-21 显示器生产服务株式会社 等离子体反应器的工件除吸附设备以及使用该设备使工件除吸附的方法
CN104803607A (zh) * 2012-04-17 2015-07-29 安瀚视特控股株式会社 显示器用玻璃基板及其制造方法
CN104803607B (zh) * 2012-04-17 2018-11-02 安瀚视特控股株式会社 显示器用玻璃基板及其制造方法
CN104149095A (zh) * 2014-07-07 2014-11-19 京东方科技集团股份有限公司 一种机械手
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