CN101377594B - 电光装置及电子设备 - Google Patents

电光装置及电子设备 Download PDF

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Publication number
CN101377594B
CN101377594B CN2008102133375A CN200810213337A CN101377594B CN 101377594 B CN101377594 B CN 101377594B CN 2008102133375 A CN2008102133375 A CN 2008102133375A CN 200810213337 A CN200810213337 A CN 200810213337A CN 101377594 B CN101377594 B CN 101377594B
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CN
China
Prior art keywords
aforementioned
pixel electrode
region
data line
drain areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008102133375A
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English (en)
Chinese (zh)
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CN101377594A (zh
Inventor
石井达也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN101377594A publication Critical patent/CN101377594A/zh
Application granted granted Critical
Publication of CN101377594B publication Critical patent/CN101377594B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
CN2008102133375A 2007-08-28 2008-08-27 电光装置及电子设备 Expired - Fee Related CN101377594B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007220686A JP5157319B2 (ja) 2007-08-28 2007-08-28 電気光学装置及び電子機器
JP220686/2007 2007-08-28

Publications (2)

Publication Number Publication Date
CN101377594A CN101377594A (zh) 2009-03-04
CN101377594B true CN101377594B (zh) 2012-02-22

Family

ID=40405982

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008102133375A Expired - Fee Related CN101377594B (zh) 2007-08-28 2008-08-27 电光装置及电子设备

Country Status (4)

Country Link
US (1) US7910926B2 (enExample)
JP (1) JP5157319B2 (enExample)
KR (1) KR20090023098A (enExample)
CN (1) CN101377594B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101957530B (zh) * 2009-07-17 2013-07-24 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
TWI402596B (zh) * 2009-10-01 2013-07-21 中華映管股份有限公司 具有電容補償的畫素結構
JP5644511B2 (ja) * 2011-01-06 2014-12-24 ソニー株式会社 有機el表示装置及び電子機器
CN104103646A (zh) * 2014-06-30 2014-10-15 京东方科技集团股份有限公司 一种低温多晶硅薄膜晶体管阵列基板及其制备方法、显示装置
JP3197989U (ja) * 2015-03-31 2015-06-11 セイコーエプソン株式会社 電気光学装置、及び電子機器
CN105137679B (zh) * 2015-10-13 2018-03-30 京东方科技集团股份有限公司 一种阵列基板、显示面板及显示装置
CN106298814A (zh) * 2016-10-13 2017-01-04 京东方科技集团股份有限公司 一种阵列基板及显示面板
CN111384065A (zh) * 2020-03-16 2020-07-07 深圳市华星光电半导体显示技术有限公司 阵列基板、显示面板以及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1031235A (ja) 1996-07-15 1998-02-03 Semiconductor Energy Lab Co Ltd 液晶表示装置
CN1580921A (zh) * 2003-08-04 2005-02-16 精工爱普生株式会社 电光装置及其制造方法以及电子设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3731447B2 (ja) * 2000-06-15 2006-01-05 セイコーエプソン株式会社 電気光学装置及びその製造方法
JP3743291B2 (ja) * 2001-01-23 2006-02-08 セイコーエプソン株式会社 電気光学装置及びプロジェクタ
JP3820921B2 (ja) * 2001-06-13 2006-09-13 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
JP3870897B2 (ja) 2002-01-07 2007-01-24 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2004004722A (ja) * 2002-04-25 2004-01-08 Seiko Epson Corp 電気光学装置及び電子機器
JP4654675B2 (ja) * 2004-12-14 2011-03-23 ソニー株式会社 液晶パネル
TWI271870B (en) * 2005-10-24 2007-01-21 Chunghwa Picture Tubes Ltd Thin film transistor, pixel structure and repairing method thereof
JP4876548B2 (ja) * 2005-11-22 2012-02-15 セイコーエプソン株式会社 電気光学装置の製造方法
JP4197016B2 (ja) 2006-07-24 2008-12-17 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1031235A (ja) 1996-07-15 1998-02-03 Semiconductor Energy Lab Co Ltd 液晶表示装置
CN1580921A (zh) * 2003-08-04 2005-02-16 精工爱普生株式会社 电光装置及其制造方法以及电子设备

Also Published As

Publication number Publication date
JP5157319B2 (ja) 2013-03-06
US20090057669A1 (en) 2009-03-05
US7910926B2 (en) 2011-03-22
JP2009053478A (ja) 2009-03-12
CN101377594A (zh) 2009-03-04
KR20090023098A (ko) 2009-03-04

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Granted publication date: 20120222

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CF01 Termination of patent right due to non-payment of annual fee