CN101370955A - 层叠结构、使用其的电路用电极及其制造方法 - Google Patents
层叠结构、使用其的电路用电极及其制造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 37
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 55
- 238000010276 construction Methods 0.000 claims description 46
- 229910052750 molybdenum Inorganic materials 0.000 claims description 36
- 239000011733 molybdenum Substances 0.000 claims description 36
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 35
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 33
- 239000011787 zinc oxide Substances 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 abstract description 17
- 239000010408 film Substances 0.000 description 156
- 239000007789 gas Substances 0.000 description 22
- 229960001296 zinc oxide Drugs 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- 238000007790 scraping Methods 0.000 description 7
- 208000037656 Respiratory Sounds Diseases 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910001954 samarium oxide Inorganic materials 0.000 description 1
- 229940075630 samarium oxide Drugs 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
提供一种层叠结构,是由透明导电薄膜及钼金属薄膜构成,透明导电薄膜及钼金属薄膜的内部应力的差为1600MPa以下。
Description
技术领域
本发明涉及层叠透明导电薄膜和钼金属薄膜的结构体、使用其的电路用电极及所述层叠结构的制造方法,特别是含有氧化铟的各种透明薄膜,还有氧化铟-氧化锡(ITO)薄膜和钼金属薄膜的层叠结构、使用其的电路用电极及所述层叠结构的制造方法。
背景技术
层叠ITO薄膜和钼薄膜的薄膜是作为液晶显示器等的电路的一部分而使用的。但是,公知有在ITO薄膜上形成钼薄膜时,在各个成膜的薄膜发生内部应力,而引起薄膜的剥落和断线。
对于该内部应力有2种,分别为拉伸应力和压缩应力。在此,所谓拉伸应力是成膜面凹陷时薄膜上发生的应力,所谓压缩应力是成膜面凸起时薄膜上发生的应力。
ITO通常受到压缩应力,金属薄膜、特别是钼金属薄膜受拉伸应力。在该状态下层叠时,由于各应力的种类(压缩和拉伸)不同其差异变大,因此在界面上发生更大的应变,最终引起薄膜的剥落和断线。
因此,ITO薄膜和钼薄膜间的密着性弱,由于该薄膜间的应力而发生龟裂、断线,增加了制品的缺陷,有生产的成品率低下的问题(专利文献1)。
对于该课题,为了防止龟裂、断线,公开了组合复杂工序而形成多层膜的方法,由于工序数增加有成品率降低这样的难点(专利文献2)。
例如,在多结晶ITO(p-ITO)法中,用真空溅射装置将p-ITO成膜后,蚀刻该ITO膜,进一步在其上用真空溅射装置将钼成膜后,蚀刻该钼膜而制造层叠体。该方法由于要反复进行2次成膜工序和溅射工序,因此变得复杂而生产性降低。
为此,要求一种能够防止由于ITO薄膜和钼薄膜间的应力而产生的龟裂、断线,同时,能够简化成膜工序和溅射工序的层叠膜的形成技术。
专利文献1:特开平10-253992号公报
专利文献2:特开2005-62889号公报
发明内容
本发明鉴于上述课题,其目的在于提供一种有助于减少布线材料间的裂纹、断线的制品缺陷、使生产的成品率提高的层叠结构。
本发明的其他的目的是提供一种所述层叠结构的制造方法。
本发明还有的其他的目的是提供一种具备所述层叠结构的电路用电极。
本发明还有的其他的目的是提供一种具备所述层叠结构或所述电路用电极的电子设备。
本发明者们为了解决这样的课题进行锐意研究的结果是发现在分别通过溅射形成透明导电膜及钼金属膜时,通过调整放电气体压力而使在两个膜上产生的内部应力的差减小,能够使界面产生的压力降低,抑制裂纹、断线的发生。因此,能够同时实现防止裂纹、断线和通过工序简化而使成品率提高,从而完成本发明。
根据本发明,提供了以下的层叠结构。
1、一种层叠结构,其由透明导电薄膜及钼金属薄膜构成,其中,所述透明导电薄膜及所述钼金属薄膜的内部应力的差为1600MPa以下。
2、根据1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟和氧化锡的薄膜。
3、根据1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟和氧化锌的薄膜。
4、根据1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟、氧化锡和氧化锌的薄膜。
5、根据1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟和稀土类元素的氧化物的薄膜。
6、一种电路用电极,其包括1~5中任一项所述的层叠结构。
7、一种电子设备,作为其至少一部分具备包括1~5中任一项所述的层叠结构或6所述的电路用电极的电路。
8、一种层叠结构的制造方法,是1~5中任一项所述的层叠结构的制造方法,其中,通过溅射在第1放电气体压力下形成透明导电薄膜,通过溅射在第2放电气体压力下形成钼金属薄膜,
其中,所述第1放电气体压力和所述第2放电气体压力调整为使所述透明导电薄膜和所述金属薄膜的内部应力的差为1600MPa以下。
9、根据1~5中任一项所述的层叠结构,其中,通过溅射在第1放电气体压力下形成透明导电薄膜,通过溅射在第2放电气体压力下形成钼金属薄膜而制造,
其中,所述第1放电气体压力和所述第2放电气体压力调整为使所述透明导电薄膜和所述金属薄膜的内部应力的差为1600MPa以下而制造。
10、一种电路用电极,其包括9所述的层叠结构。
11、一种电子设备,作为其至少一部分具备包括9所述的层叠结构或10所述的电路用电极的电路。
根据本发明能够提供一种有助于减少布线材料间的裂纹、断线的制品缺陷、使生产的成品率提高的层叠结构。
根据本发明,能够提供一种所述层叠结构的制造方法。
根据本发明,能够提供一种具备所述层叠结构的电路用电极。
根据本发明,能够提供一种具备所述层叠结构或所述电路用电极的电子设备。
附图说明
图1是表示光杠杆法的测定方法的模式图。
图2是表示ITO及Mo的成膜压力和内部应力的关系的曲线图。
图3是表示ITO膜和Mo膜的薄膜应力和温度的关系的曲线图。
具体实施方式
本发明的层叠结构为使透明导电薄膜及钼金属薄膜层叠的薄膜,可以称为薄膜层叠体。该层叠结构通常是在基板上使透明导电薄膜、钼金属薄膜顺序层叠而成。另外,也可以在基板上使钼金属薄膜、透明导电薄膜顺序层叠而成。还有,本发明的层叠结构也可以使各层图案形成希望的形状。即,如果图案形成透明导电薄膜及钼金属薄膜各自需要的形状,各自形成的图案的至少一部分重叠,则形成本发明的层叠结构。
本发明的透明导电薄膜的膜厚通常为10~500nm,优选为10~100nm,更优选为20~50nm,钼金属薄膜的膜厚通常为10~500nm,优选为20~200nm,如果形成为透明导电薄膜和钼金属薄膜的内部应力差为1600MPa以下,则各自薄膜的膜厚不作特殊限定可以根据用途适当地选择。
对于基板没有特别限定,通常能够使用玻璃、石英、塑料等。
本发明的透明导电薄膜,如果是透明且具有导电性就没有特殊的限制,是含有从氧化铟、氧化锡、氧化锌、稀土类元素的氧化物中选出的至少一种或两种以上的薄膜,优选为含有从氧化铟、氧化锡、氧化锌、稀土类元素的氧化物中选出的至少一种或两种以上的薄膜,是含有氧化铟和氧化锌的薄膜,是含有氧化铟和氧化锌的薄膜,是含有氧化铟、氧化锡和氧化锌的薄膜,或含有氧化铟和稀土类元素的氧化物的薄膜。
作为本发明的透明电极薄膜的具体例,能够举出例如氧化铟-氧化锌薄膜(ITO)、氧化铟-氧化锌薄膜(IZO)、氧化铟-氧化锡-氧化锌薄膜(ITZO)、氧化铟-氧化铈薄膜(ICO)、氧化铟-氧化钐薄膜(ISmO)。
本发明的透明电极薄膜含有多种氧化物时,通常以复合氧化物的形成而使用,但只要能够保持作为透明电极使用的透明性和导电性,也可以是化合物、混合物。
本发明的透明电极薄膜,在含有氧化铟和氧化锡时,通常优选形成由氧化铟和氧化锡构成的复合氧化物,另外各自的氧化物的重量比没有特别限定,通常优选为80:20~99:1、希望为85:15~95:5。在该范围之外时透明性或导电性会降低。另外会发生蚀刻不良和连接不良。
本发明的透明电极薄膜为含有氧化铟和氧化锌的薄膜时,优选形成由氧化铟和氧化锌构成的复合氧化物,另外各自的氧化物的重量比没有特别限定,通常优选为50:50~99:1、希望为60:40~90:10。在该范围之外时透明性或导电性会降低。另外会发生蚀刻不良和连接不良。
本发明的透明电极薄膜为含有氧化铟、氧化锡和氧化锌的薄膜时,优选形成由氧化铟、氧化锡和氧化锡构成的复合氧化物,另外氧化铟:(氧化锡和氧化锌)的重量比通常优选为50:50~99:1、希望为60:40~90:5。在该范围之外时透明性或导电性会降低。另外会发生蚀刻不良和连接不良。
本发明的透明电极薄膜为含有氧化铟和稀土类元素的氧化物时,通常优选形成由氧化铟和氧化锡构成的复合氧化物,另外各自的氧化物的重量比没有特别限定,通常优选为80:20~99:1、希望为90:10~98:2。在该范围之外时透明性或导电性会降低。另外会发生蚀刻不良和连接不良。
在本发明中,透明导电薄膜与钼金属薄膜的内部应力的差为1600MPa以下,优选为1400MPa以下,更优选为1350MPa以下,内部应力的差超过这些范围时透明导电薄膜与钼金属薄膜会引起剥落或断线。
在此,本发明中规定的内部应力是通过光杠杆法测定的。参照图1对该测定方法加以说明。
在该图中,在基板1上形成有膜3。由于膜3发生的内部应力,基板1与薄膜3翘曲。
由于多数基板1在初期状态具有曲率半径为R1的翘曲量,因此在将基板1上形成膜3时的翘曲量作为R2时,由膜3引起的翘曲量R可以通过下式求出。
R=R1×R2(R1-R2)
首先,用激光光线测定翘曲量R1、R2。从激光头11发出的激光光线a通过射束分离器13一部分光线b射向膜3,另一部分光线c继续前进。激光光线c通过反射镜15向膜3方向反射。激光激光b、d共同向膜3反射,通过探测器17、19检测出光量及波长。根据这些光量及波长的变化量,测量翘曲量R1、R2。从翘曲量R1、R2得到翘曲量R,从下式求出薄膜应力δ。
δ=Eh2/{(1-v)6Rt}
在此,
E/(1-v):基板的2轴弹性系数(Pa)
h:基板的厚度(m)
t:薄膜的厚度(m) R:基板的翘曲(m)
δ:薄膜应力的平均值(Pa)
薄膜应力δ为正时是拉伸应力,为负时是压缩应力。
本发明的层叠结构可以用以下的方法制作。
透明导电薄膜及钼金属薄膜通过溅射法成膜,这时,通过调整成膜时各个的放电气体压力就能够调整在膜内发生的内部应力的差。
为了使透明导电薄膜及钼金属薄膜的内部应力的差在1600MPa以下放电气体压力可以作如下调整。
透明导电薄膜成膜时的放电气体压力通过与钼金属薄膜成膜时的放电气体压力的相对关系决定,通常希望为0.1Pa以上,优选为0.5Pa以上,另外作为上限没有特别限定,但优选在5Pa以下。低于0.1Pa时,有抽真空的时间变长,需要大型的真空泵等的课题,超过5Pa时,透明导电薄膜的电阻率急剧变大,有不能供于实用的情况。
钼金属薄膜成膜时的放电气体压力通过与透明导电薄膜成膜时的放电气体压力的相对关系决定,通常希望为0.1Pa以上,优选为0.3Pa以上,另外作为上限没有特别限定,优选在2Pa以下。低于0.1Pa时,有内部应力有变的过大的情况,超过2Pa时,有成膜速度下降的情况,有不能供于实用的情况。
作为放电气体以外的成膜条件,基板温度通常为室温~400℃,成膜气体通常为希望使用氩、氩及氧。
作为本发明的层叠结构制造方法的具体例子,例如由以下的方法(无定型ITO(a-ITO)法)。
1、使用真空溅射装置的a-ITO及钼的成膜。
2、抗蚀剂涂敷、曝光、显影
3、通过PAN(磷酸/乙酸/硝酸)系蚀刻剂蚀刻钼
4、通过草酸系蚀刻剂蚀刻a-ITO
5、抗蚀剂涂敷、曝光、显影、加热
6、通过PAN(磷酸/乙酸/硝酸)系蚀刻剂蚀刻钼
7、通过CVD法进行的额SiNx的膜的层叠(300℃)
层叠a-ITO膜和钼膜时,两膜的内部应力差大,在两膜的界面有压力,而发生裂纹、断线,因此历来为了提高a-ITO膜和钼膜的紧密性,需要分多段进行1的成膜工序。然而,根据本发明的制造方法,由于a-ITO膜和钼膜的内部应力差小,因此界面不发生压力,裂纹、断线不会发生,因此,将该成膜工序简化为1次,而成品率提高。
使用本发明的层叠结构能够制造电路用电极,还能够制造电路,能够使用于电子设备。
例如能够作为液晶、有机电致发光器件、等离子体显示器等的电子设备的电路而使用。
[实施例]
以下表示本发明的具体例,本发明不限定于该例,根据用途可以作适宜的变更而使用。
试验例1
(1)ITO的成膜和其内部应力的测定
在电磁溅射装置上安装4英寸ΦITO(氧化铟:氧化锡=90:10wt%)的靶,在4英寸Φ硅晶片(厚0.3mm)的全面形成厚度为200nm的薄膜。
成膜条件如下。
基板温度:室温
成膜气体种:氩:89%、氢9%、氧2%
使成膜压力在0.1~1.3Pa变化,从硅晶片的移动,根据上述方法算出薄膜的内部应力。还有,作为基板(硅晶片)的2轴弹性系数对于Si(111)使用2.290×1011Pa。使用薄膜应力测定装置(F2410、TENCOR社制)以波长670nm的激光,在氮气气流中进行测定。
在表1及图2中显示结果
(2)Mo的成膜和其内部应力的测定
与(1)同样,在电磁溅射装置上安装4英寸ΦMO(纯度99.99%)的靶,在4英寸Φ硅晶片(厚0.3mm)的全面形成厚度为200nm的薄膜。
成膜条件如下。
基板温度:室温
成膜气体种:氩:100%
使成膜压力在0.2~1.5Pa变化,从硅晶片的移动,与(1)同样算出薄膜的内部应力。
在表1及图2中显示结果
试验例2
(1)Mo膜、ITO膜的应力-温度特性
对于由试验例1得到的在成膜压力为0.1Pa及0.6Pa形成的ITO膜、和成膜压力为0.2Pa形成的Mo膜,测定膜应力-温度特性。即,将这些薄膜从20℃升温至330℃(升温速度5℃/min),在330℃保持30分钟,随后,降温至50℃。与试验例1同样测定这时的应力。
结果在表3中显示
在0.6Pa的成膜压力形成的ITO膜与在0.2Pa的成膜压力形成的Mo膜的内部应力的差为1550MPa,该差也在升温时、降温时大体不变或稍微变少。因此,没有发现薄膜的紧密性的劣化。
实施例1
在电磁溅射装置上安装4英寸ΦITO(氧化铟:氧化锡=90:10wt%)的靶和4英寸ΦMo(纯度99.99%)的靶,在10cm见方的玻璃基板上,在表1中所示的放电气体压力下,分别形成ITO200nm、Mo200nm的薄膜。
在得到的层叠体上,以棋盘目状切割,实施带剥离试验,确认玻璃状况。
进一步实施以下的刮擦试验。
作为刮擦试验,使用CSME社制Micro-Scratch-Tester。在此,剥离强度的测定条件描述如下。
刮擦距离:20nm
刮擦载荷:0-10N(牛顿)
载荷比率:10N/min
刮擦速度:20mm/min
金刚石粒形状:前端200μmΦ
用光学显微镜观察在上述条件下刮擦试验后的试料,以底层的透明导电薄膜(ITO)的暴露点作为Mo薄膜的剥离点(已确认透明导电薄膜没有剥离),测定距刮擦开始点的距离,由此算出剥离载荷。
结果在表1中显示。
实施例2~4
除变更在表1中表示的ITO及Mo的成膜时的气体压力之外,在与实施例1同样的条件下制作、评价层叠体。
实施例5
除使用4英寸ΦIZO(氧化铟:氧化锌=90:10wt%)的靶,如表1所示变更ITO及Mo的成膜时的气体压力之外,在与实施例1同样的条件下制作、评价IZO膜和Mo膜的层叠体。
实施例6
除使用4英寸ΦITZO(氧化铟:氧化锡:氧化锌=60:20:15wt%)的靶,如表1所示变更ITO及Mo的成膜时的气体压力之外,在与实施例1同样的条件下制作、评价ITZO膜和Mo膜的层叠体。
比较例1~2
除如表1所示变更ITO及Mo的成膜时的气体压力之外,在与实施例1同样的条件下制作、评价层叠体。
[表1]
透明导电河膜的种类 | 透明导电薄膜成模时的放电气体压力(PA) | Mo成膜时的放电气体压力(Pa) | 透明导电薄膜的内部应力(MPa) | Mo模的内部应力(MPa) | 内部应力的差(MPa) | 带剥离试验测定的密楼强度 | 刮剥离试验(N) | |
实施例1 | ITO | 0.3 | 0.67 | -560 | 760 | 无剥离 | 5.47 | |
实施例2 | ITO | 0.6 | 0.67 | -220 | 760 | 980 | 无剥离 | 7.61 |
实施例3 | ITO | 0.1 | 1.0 | -620 | 470 | 1090 | 无剥离 | 6.64 |
实施例4 | ITO | 0.6 | 0.2 | -220 | 1330 | 1550 | 少许剥离 | 5.12 |
实施例5 | IZO | 0.6 | 0.2 | -110 | 1330 | 1440 | 无剥离 | 5.36 |
实施例6 | ITZO | 0.6 | 0.2 | -140 | 1330 | 1470 | 无剥离 | 5.34 |
比较例1 | IO | 0.1 | 0.2 | -620 | 1330 | 1950 | 有剥高 | 0.98 |
比较例2 | ITO | 0.3 | 0.2 | -560 | 1330 | 1890 | 有剥离 | 1.32 |
工业上的实用性
本发明的层叠结构能够作为电子设备的电路用电极使用,另外能够使用于使用该电极的电子设备的电路。
Claims (11)
1.一种层叠结构,其由透明导电薄膜及钼金属薄膜构成,其中,所述透明导电薄膜及所述钼金属薄膜的内部应力的差为1600MPa以下。
2.根据权利要求1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟和氧化锡的薄膜。
3.根据权利要求1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟和氧化锌的薄膜。
4.根据权利要求1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟、氧化锡和氧化锌的薄膜。
5.根据权利要求1所述的层叠结构,其中,所述透明导电薄膜为含有氧化铟和稀土类元素的氧化物的薄膜。
6.一种电路用电极,其含有权利要求1~5中任一项所述的层叠结构。
7.一种电子设备,作为其至少一部分具备包括权利要求1~5中任一项所述的层叠结构或权利要求6所述的电路用电极的电路。
8.一种层叠结构的制造方法,是权利要求1~5中任一项所述的层叠结构的制造方法,其中,通过溅射在第1放电气体压力下形成透明导电薄膜,通过溅射在第2放电气体压力下形成钼金属薄膜,
其中,所述第1放电气体压力和所述第2放电气体压力调整为使所述透明导电薄膜和所述金属薄膜的内部应力的差为1600MPa以下。
9.根据权利要求1~5中任一项所述的层叠结构,其是通过溅射在第1放电气体压力下形成透明导电薄膜,通过溅射在第2放电气体压力下形成钼金属薄膜而制造的层叠结构,
其中,所述第1放电气体压力和所述第2放电气体压力调整为使所述透明导电薄膜和所述金属薄膜的内部应力的差为1600MPa以下而制造。
10.一种电路用电极,其包括权利要求9所述的层叠结构。
11.一种电子设备,作为其至少一部分具备包括权利要求9所述的层叠结构或权利要求10所述的电路用电极的电路。
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JP011716/2006 | 2006-01-19 | ||
JP2006011716A JP2007191761A (ja) | 2006-01-19 | 2006-01-19 | 積層構造、それを用いた電気回路用電極及びその製造方法 |
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US (1) | US8017868B2 (zh) |
EP (1) | EP1975273A4 (zh) |
JP (1) | JP2007191761A (zh) |
KR (1) | KR20080085879A (zh) |
CN (1) | CN101370955A (zh) |
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WO (1) | WO2007083590A1 (zh) |
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CN107343352A (zh) * | 2016-05-03 | 2017-11-10 | 琦芯科技股份有限公司 | 具显示介面的软性电路连接架构与其制作方法 |
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WO2007086280A1 (ja) * | 2006-01-25 | 2007-08-02 | Idemitsu Kosan Co., Ltd. | 積層構造及びそれを用いた電気回路用電極 |
US20100101937A1 (en) * | 2008-10-29 | 2010-04-29 | Applied Vacuum Coating Technologies Co., Ltd. | Method of fabricating transparent conductive film |
JP6142363B2 (ja) * | 2012-08-01 | 2017-06-07 | 株式会社Joled | 有機電界発光素子の製造方法 |
JP2016149183A (ja) * | 2013-06-07 | 2016-08-18 | コニカミノルタ株式会社 | 透明導電体及びその製造方法 |
Family Cites Families (14)
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JPH0726867B2 (ja) * | 1986-07-23 | 1995-03-29 | 株式会社日立メデイコ | 多素子光検出器 |
JPH0329216A (ja) | 1989-03-28 | 1991-02-07 | Asahi Glass Co Ltd | 透明電導膜の形成方法 |
JPH0668713A (ja) * | 1992-08-20 | 1994-03-11 | Tonen Corp | 透明導電膜 |
JP4137182B2 (ja) * | 1995-10-12 | 2008-08-20 | 株式会社東芝 | 配線膜形成用スパッタターゲット |
KR100238795B1 (ko) | 1997-03-03 | 2000-01-15 | 구본준 | 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법 |
JP2000200763A (ja) * | 1998-12-29 | 2000-07-18 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US6365016B1 (en) * | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
JP2002083812A (ja) | 1999-06-29 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 配線材料およびこれを用いた配線を備えた半導体装置およびその作製方法 |
JP2001152323A (ja) * | 1999-11-29 | 2001-06-05 | Canon Inc | 透明電極および光起電力素子の作製方法 |
WO2001094749A1 (en) * | 2000-06-06 | 2001-12-13 | Halliburton Energy Services, Inc. | Real-time method for maintaining formation stability |
CN1237199C (zh) * | 2000-06-21 | 2006-01-18 | 日本板硝子株式会社 | 具有透明导电薄膜的基片和使用该基片的有机电致发光装置 |
US6743488B2 (en) * | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
JP2004341127A (ja) * | 2003-05-14 | 2004-12-02 | Sharp Corp | 配線基板素材の製造方法、配線基板素材の短絡結線の除去方法、および配線基板素材 |
KR100980015B1 (ko) | 2003-08-19 | 2010-09-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
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KR20080085879A (ko) | 2008-09-24 |
EP1975273A1 (en) | 2008-10-01 |
JP2007191761A (ja) | 2007-08-02 |
WO2007083590A1 (ja) | 2007-07-26 |
US20100224390A1 (en) | 2010-09-09 |
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TW200745354A (en) | 2007-12-16 |
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