CN101369565B - 电子设备 - Google Patents

电子设备 Download PDF

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CN101369565B
CN101369565B CN2008102106325A CN200810210632A CN101369565B CN 101369565 B CN101369565 B CN 101369565B CN 2008102106325 A CN2008102106325 A CN 2008102106325A CN 200810210632 A CN200810210632 A CN 200810210632A CN 101369565 B CN101369565 B CN 101369565B
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semiconductor chip
resin projection
electronic equipment
wiring
electrode
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CN101369565A (zh
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田中秀一
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Seiko Epson Corp
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Abstract

本发明的目的是提供一种防止由于热膨胀引起的电接触不良的电子设备。该电子设备具备：半导体芯片(10)，其形成有集成电路(12)；电极(14)，其形成在半导体芯片(10)上，与集成电路(12)电连接；树脂突起(18)，其配置在半导体芯片(10)上；布线(20)，其配置为从电极(14)上到达树脂突起(18)上；布线基板(30)，其形成有布线图案(32)，并按照将布线(20)在树脂突起(18)上的部分与布线图案(32)对置后进行电连接的方式装载有半导体芯片(10)；和粘接剂(42)，其将半导体芯片(10)与布线基板(30)进行粘接。树脂突起(18)由热膨胀率为负的材料形成，并在使半导体芯片(10)与布线基板(30)的间隔变窄的方向上被压缩。

Description

电子设备
技术领域
本发明涉及一种电子设备。
背景技术
在特开平2-272737号公报中，公开了在半导体芯片的有源面上设置树脂突起，并从有源面的电极到树脂突起上设置布线来形成突起电极。因此，通过树脂突起可以缓和应力，并且能够将突起电极以与电极不同的间距及排列进行排列。在日本专利第2744476号公报中，公开了使用电绝缘性的粘接剂将具有突起电极的半导体装置安装在布线基板上。一旦被安装，突起电极的树脂突起将在半导体芯片与布线基板之间被压缩，并利用其弹性将突起电极的布线压接在布线基板的布线图案上。通过压接，即便半导体芯片上所形成的突起电极存在有高度偏差或基板的翘曲，也能够得到稳定的连接。
在日本专利第2731471号公报中，虽然公开了粘接剂与树脂突起的线性膨胀系数相同的构造，但是由于材料的选择余地窄而不能实现。在特开2005-101527号公报中，公开了即使在树脂突起的线性膨胀系数比粘接剂的线性膨胀系数大的状态下，通过将树脂突起进行比加热时两者的伸展量的差还大的压缩，粘接剂即便因热而伸展也保持树脂突起的压缩状态，并维持基于突起电极的电连接。
但是，实际上由于粘接剂的玻璃化转变点比树脂突起的玻璃化转变点低，所以粘接剂首先软化，此时因被压缩的树脂突起其自身的热膨胀和对压缩的斥力，软化后的粘接剂伸展。由此，树脂突起几乎完全地复原而不能保持树脂突起的压接状态，从而无法确保电连接。
发明内容
本发明的目的是防止由于热膨胀引起的电接触不良。
(1)本发明涉及的电子设备，具备：半导体芯片，其形成有集成电路；电极，其形成在所述半导体芯片上，与所述集成电路电连接；树脂突起，其配置在所述半导体芯片上；布线，其配置为从所述电极上到达所述树脂突起上；布线基板，其形成有布线图案，按照所述布线在所述树脂突起上的部分与所述布线图案对置并电连接的方式搭载有所述半导体芯片；和粘接剂，其对所述半导体芯片与所述布线基板进行粘接；所述树脂突起由热膨胀率为负的材料形成，并在使所述半导体芯片与所述布线基板的间隔变窄的方向上被压缩。根据本发明，由于树脂突起的热膨胀率为负，所以一旦加热就将收缩。因此，即便因粘接剂的软化而树脂突起的压缩力被解除，使得树脂突起复原，也会由于树脂突起还进行收缩而使得在半导体芯片与基板之间对粘接剂产生的拉伸应力(试图将半导体芯片与基板的间隔扩大的力)变小。即能够抑制软化后的粘接剂的伸展，并维持树脂突起的压缩状态。由此，可谋求防止由热膨胀引起的电连接不良。
(2)在该电子设备中，也可以是：至少在25℃以上且在所述粘接剂的玻璃化转变点以下的温度区域内，所述树脂突起的热膨胀率为负。
(3)在该电子设备中，也可以是：所述树脂突起由液晶聚合物、聚对苯苯并二噁唑以及聚酰亚胺苯并噁唑所构成的组中的任一种形成。
(4)在该电子设备中，也可以是：所述树脂突起由在苯酚类酚醛清漆固化剂和多官能环氧树脂中分散有橡胶弹性微粒的混合树脂形成。
附图说明
图1是表示在本发明的实施方式的电子装置中所使用的半导体装置的俯视图。
图2是图1所示的半导体装置的II-II线剖视图。
图3是图1所示的半导体装置的III-III线剖视图。
图4(A)及图4(B)是本发明的实施方式的电子装置的制造方法的说明图。
图5(A)和图5(B)是本发明的实施方式的电子装置的说明图。
图6是表示使用了本发明的实施方式涉及的半导体装置的电子设备的说明图。
图7是使用了本发明的实施方式涉及的半导体装置的电子设备的说明图。
图8是使用了本发明的实施方式涉及的半导体装置的电子设备的说明图。
图中：10-半导体芯片，12-集成电路，14-电极，16-钝化膜，18-树脂突起，20-布线，30-布线基板，32-布线图案，34-基板，40-粘接剂前体，42-粘接剂。
具体实施方式
图1是表示在本发明的实施方式的电子装置中所使用的半导体装置的俯视图。图2是图1所示的半导体装置的II-II线剖视图。图3是图1所示的半导体装置的III-III线剖视图。
半导体装置具有半导体芯片10。在半导体芯片10中，形成有集成电路(晶体管等)12。半导体芯片10具有经内部布线(未图示)与集成电路12电连接的电极14。半导体芯片是在一个方向上较长的形状(平面形状为长方形)，沿着较长一侧的边排列有多个电极14。在半导体芯片10上，按照使电极14的至少一部分露出的方式，形成有作为具有开口部15的保护膜的钝化膜16。钝化膜16例如可仅由SiO2或SiN等的无机材料形成。钝化膜16形成在集成电路12的上方。
在钝化膜16上形成有树脂突起18。在半导体芯片10的端部形成有电极14，在比电极14更处于中央的位置上形成有树脂突起18。至少在25℃以上且在粘接剂42(参照图5(A)及图5(B))的玻璃化转变点(例如120℃)以下的温度区域内，树脂突起18的热膨胀率(线性膨胀系数)为负。即，树脂突起18在该温度区域内随着温度升高而收缩。作为这种树脂突起18的材料，例如可采用液晶聚合物、聚对苯苯并二噁唑或聚酰亚胺苯并噁唑，也可采用在苯酚类酚醛清漆固化剂和多官能环氧树脂中分散有橡胶弹性微粒的混合树脂。
从多个电极14上分别向树脂突起18上形成有多个布线20。布线20在树脂18上形成并与电极14电连接。布线20自电极14上经钝化膜16而到达树脂突起18上。布线20在电极14上与电极14电连接。布线20与电极14既可以直接接触，还可以在两者间夹设导电膜(未图示)。布线20形成为越过树脂突起18的与电极14相反一侧的端部而到达钝化膜16上。布线20从配置在半导体芯片10的端部的电极14向中央方向延伸。
树脂突起18的上面形成为：与多个布线20不交叠的区域比与多个布线20交叠的区域形成得低(参照图3)。可在树脂突起18上形成多个布线20后，对树脂突起18的相邻的布线20之间的部分进行蚀刻。
图4(A)和图4(B)是本发明的实施方式的电子装置的制造方法的说明图。其中，图4(A)所示的半导体装置对应于图1的II-II线剖视图
(图2)，图4(B)所示的半导体装置对应于图1的III-III线剖视图(图3)。
在本实施方式中，将上述半导体装置经由热固化性的粘接剂前体40配置在具有布线图案32的布线基板30上。布线基板30可以是液晶面板或有机EL面板。支撑布线图案32的基板34，可以是玻璃或树脂中的任意一种。在粘接剂前体40中，也可使用分散有导电粒子而构成的各向异性导电材料。并且，在半导体装置及布线基板30之间施加挤压力及加热。此外，在树脂突起18的相邻的布线20间的部分上配置粘接剂前体40，通过加热使其固化收缩。对粘接剂前体40一直维持施加挤压直到其固化为止。一旦粘接剂前体40固化就解除挤压力。这样来制造电子装置。
图5(A)和图5(B)是本发明的实施方式的电子装置的说明图。并且，图5(A)所示的半导体装置对应于图1的II-II线剖视图(图2)，图5(B)所示的半导体装置对应于图1的III-III线剖视图(图3)。
电子装置具有：上述的半导体装置；和布线基板30，其具有与多个布线20的在树脂突起18上的部分对置并电连接的布线图案32。在半导体芯片10与布线基板30之间介入固化后的粘接剂42。粘接剂42内存有由固化时收缩所引起的残存压力。树脂突起18的相邻的布线20间的部分与布线基板30之间配置有粘接剂42的一部分。
树脂突起18在使半导体芯片10与布线基板30的间隔变窄的方向上被压缩。树脂突起18由热膨胀率为负的材料构成。至少在25℃以上且在粘接剂的玻璃化转变点(例如120℃)以下的温度区域内，树脂突起18的热膨胀率为负。根据本实施方式，由于树脂突起18的热膨胀率为负，所以一旦加热就将收缩。因此，即便因加热而粘接剂42软化造成树脂突起18的压缩力被解除，使树脂突起18复原，也将因为树脂突起还进行收缩，从而使得在半导体芯片10与基板34之间对粘接剂42产生的拉伸应力(试图将半导体芯片10与基板34的间隔扩大的力)变小。即能够抑制软化后的粘接剂42的伸展，并维持树脂突起18的压缩状态。换言之，树脂突起18的斥力(试图使粘接剂42扩展的力)包括基于树脂突起18的弹力的力、和基于树脂突起18的热膨胀的力，在本实施方式中，由于树脂突起18的热膨胀率为负，所以可以减少树脂突起18的斥力的合力。由此，可以谋求防止由热膨胀引起的电连接不良。
图6是使用了本发明的一个实施方式的半导体装置的电子设备1000的说明图。
图7是使用了本发明的一个实施方式的半导体装置的电子设备2000的说明图。
图8是使用了本发明的一个实施方式的半导体装置的电子设备3000的说明图。
本发明并不限于上述实施方式，可以进行各种变形。例如，本发明包括与实施方式中所说明的结构在实质上相同的结构(例如，功能、方法及结果相同的结构，或目的及结果相同的结构)。此外，本发明包括将实施方式中所说明的结构的非本质的部分进行了置换的结构。此外，本发明包括与实施方式中所说明的结构发挥同样作用效果的结构，或能够达到相同目的的结构。另外，本发明包括在实施方式中所说明的结构中附加了公知技术的结构。

Claims (5)

1.一种电子设备，具备：
半导体芯片，其形成有集成电路；
电极，其形成在所述半导体芯片上，与所述集成电路电连接；
树脂突起，其配置在所述半导体芯片上；
布线，其配置为从所述电极上到达所述树脂突起上；
布线基板，其形成有布线图案，按照所述布线在所述树脂突起上的部分与所述布线图案对置并电连接的方式搭载有所述半导体芯片；和
粘接剂，其对所述半导体芯片与所述布线基板进行粘接；
所述树脂突起由热膨胀率为负的材料形成，并在使所述半导体芯片与所述布线基板的间隔变窄的方向上被压缩。
2.根据权利要求1所述的电子设备，其特征在于，
在25℃以上且在所述粘接剂的玻璃化转变点以下的温度区域内，所述树脂突起的热膨胀率为负。
3.根据权利要求1或2所述的电子设备，其特征在于，
所述树脂突起由液晶聚合物形成。
4.根据权利要求1或2所述的电子设备，其特征在于，
所述树脂突起由聚对苯苯并二
Figure FSB00000279819900011
唑以及聚酰亚胺苯并
Figure FSB00000279819900012
唑所构成的组中的任一种形成。
5.根据权利要求1或2所述的电子设备，其特征在于，
所述树脂突起由在苯酚类酚醛清漆固化剂和多官能环氧树脂中分散有橡胶弹性微粒的混合树脂形成。
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