CN101361180B - 高频元件模块 - Google Patents

高频元件模块 Download PDF

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Publication number
CN101361180B
CN101361180B CN2007800015433A CN200780001543A CN101361180B CN 101361180 B CN101361180 B CN 101361180B CN 2007800015433 A CN2007800015433 A CN 2007800015433A CN 200780001543 A CN200780001543 A CN 200780001543A CN 101361180 B CN101361180 B CN 101361180B
Authority
CN
China
Prior art keywords
frequency component
potting
substrate
frequency element
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800015433A
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English (en)
Chinese (zh)
Other versions
CN101361180A (zh
Inventor
吉田大广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN101361180A publication Critical patent/CN101361180A/zh
Application granted granted Critical
Publication of CN101361180B publication Critical patent/CN101361180B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/276—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Casings For Electric Apparatus (AREA)
  • Waveguides (AREA)
  • Waveguide Connection Structure (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN2007800015433A 2006-05-16 2007-05-11 高频元件模块 Expired - Fee Related CN101361180B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP136290/2006 2006-05-16
JP2006136290A JP4690938B2 (ja) 2006-05-16 2006-05-16 高周波素子モジュール
PCT/JP2007/000509 WO2007132560A1 (ja) 2006-05-16 2007-05-11 高周波素子モジュール及びその製造方法

Publications (2)

Publication Number Publication Date
CN101361180A CN101361180A (zh) 2009-02-04
CN101361180B true CN101361180B (zh) 2012-11-28

Family

ID=38693661

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800015433A Expired - Fee Related CN101361180B (zh) 2006-05-16 2007-05-11 高频元件模块

Country Status (7)

Country Link
US (1) US7635918B2 (cg-RX-API-DMAC7.html)
JP (1) JP4690938B2 (cg-RX-API-DMAC7.html)
KR (1) KR100987089B1 (cg-RX-API-DMAC7.html)
CN (1) CN101361180B (cg-RX-API-DMAC7.html)
DE (1) DE112007000081T5 (cg-RX-API-DMAC7.html)
TW (1) TW200802743A (cg-RX-API-DMAC7.html)
WO (1) WO2007132560A1 (cg-RX-API-DMAC7.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8062930B1 (en) 2005-08-08 2011-11-22 Rf Micro Devices, Inc. Sub-module conformal electromagnetic interference shield
US20090002969A1 (en) 2007-06-27 2009-01-01 Rf Micro Devices, Inc. Field barrier structures within a conformal shield
US8053872B1 (en) 2007-06-25 2011-11-08 Rf Micro Devices, Inc. Integrated shield for a no-lead semiconductor device package
US8959762B2 (en) 2005-08-08 2015-02-24 Rf Micro Devices, Inc. Method of manufacturing an electronic module
US7956429B1 (en) 2007-08-02 2011-06-07 Rf Micro Devices, Inc. Insulator layer based MEMS devices
US9137934B2 (en) 2010-08-18 2015-09-15 Rf Micro Devices, Inc. Compartmentalized shielding of selected components
US8835226B2 (en) 2011-02-25 2014-09-16 Rf Micro Devices, Inc. Connection using conductive vias
US9627230B2 (en) 2011-02-28 2017-04-18 Qorvo Us, Inc. Methods of forming a microshield on standard QFN package
US9807890B2 (en) 2013-05-31 2017-10-31 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
US11127689B2 (en) 2018-06-01 2021-09-21 Qorvo Us, Inc. Segmented shielding using wirebonds
US11219144B2 (en) 2018-06-28 2022-01-04 Qorvo Us, Inc. Electromagnetic shields for sub-modules
US11114363B2 (en) 2018-12-20 2021-09-07 Qorvo Us, Inc. Electronic package arrangements and related methods
US11515282B2 (en) 2019-05-21 2022-11-29 Qorvo Us, Inc. Electromagnetic shields with bonding wires for sub-modules

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4864384A (en) * 1982-03-23 1989-09-05 Thomson Csf Pre-matched module for an ultra-high frequency diode and a process for forming the biasing connection for the diode
US6621162B1 (en) * 1999-09-17 2003-09-16 Kabushiki Kaisha Toshiba High frequency circuit apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2987950B2 (ja) * 1991-01-25 1999-12-06 日立化成工業株式会社 ポリイミド系樹脂ペーストおよびこれを用いたｉｃ
JP2001035956A (ja) * 1999-07-19 2001-02-09 Sanyo Electric Co Ltd 半導体装置
JP2001345419A (ja) 2000-05-31 2001-12-14 Hitachi Ltd 一体型高周波無線回路モジュール
JP2003179181A (ja) * 2001-12-11 2003-06-27 Ngk Spark Plug Co Ltd 樹脂製配線基板
JP2003298004A (ja) 2002-04-04 2003-10-17 Fujitsu Ltd 素子間干渉電波シールド型高周波モジュール及び電子装置
JP2005109306A (ja) * 2003-10-01 2005-04-21 Matsushita Electric Ind Co Ltd 電子部品パッケージおよびその製造方法
JP2005340656A (ja) * 2004-05-28 2005-12-08 Matsushita Electric Ind Co Ltd 高周波集積回路装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4864384A (en) * 1982-03-23 1989-09-05 Thomson Csf Pre-matched module for an ultra-high frequency diode and a process for forming the biasing connection for the diode
US6621162B1 (en) * 1999-09-17 2003-09-16 Kabushiki Kaisha Toshiba High frequency circuit apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2001-35956A 2001.02.09

Also Published As

Publication number Publication date
TW200802743A (en) 2008-01-01
KR20080088590A (ko) 2008-10-02
CN101361180A (zh) 2009-02-04
US7635918B2 (en) 2009-12-22
TWI336510B (cg-RX-API-DMAC7.html) 2011-01-21
JP4690938B2 (ja) 2011-06-01
US20080203561A1 (en) 2008-08-28
DE112007000081T5 (de) 2009-04-23
KR100987089B1 (ko) 2010-10-11
WO2007132560A1 (ja) 2007-11-22
JP2007311396A (ja) 2007-11-29

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Granted publication date: 20121128

Termination date: 20150511

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