CN101350369A - 底部阳极肖特基二极管的结构和制造方法 - Google Patents
底部阳极肖特基二极管的结构和制造方法 Download PDFInfo
- Publication number
- CN101350369A CN101350369A CNA2008101251459A CN200810125145A CN101350369A CN 101350369 A CN101350369 A CN 101350369A CN A2008101251459 A CNA2008101251459 A CN A2008101251459A CN 200810125145 A CN200810125145 A CN 200810125145A CN 101350369 A CN101350369 A CN 101350369A
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- Prior art keywords
- diode
- schottky
- zone
- doped region
- anode
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 230000004888 barrier function Effects 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 abstract 7
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000000779 depleting effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 3
- 238000013517 stratification Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- -1 phosphonium ion Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- IYYIVELXUANFED-UHFFFAOYSA-N bromo(trimethyl)silane Chemical compound C[Si](C)(C)Br IYYIVELXUANFED-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- 230000005068 transpiration Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (38)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310029746.0A CN103137712B (zh) | 2007-07-22 | 2008-06-12 | 底部阳极肖特基二极管 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/880,497 US7633135B2 (en) | 2007-07-22 | 2007-07-22 | Bottom anode Schottky diode structure and method |
US11/880,497 | 2007-07-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310029746.0A Division CN103137712B (zh) | 2007-07-22 | 2008-06-12 | 底部阳极肖特基二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101350369A true CN101350369A (zh) | 2009-01-21 |
CN101350369B CN101350369B (zh) | 2013-03-20 |
Family
ID=40264150
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310029746.0A Expired - Fee Related CN103137712B (zh) | 2007-07-22 | 2008-06-12 | 底部阳极肖特基二极管 |
CN2008101251459A Active CN101350369B (zh) | 2007-07-22 | 2008-06-12 | 底部阳极肖特基二极管的结构和制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310029746.0A Expired - Fee Related CN103137712B (zh) | 2007-07-22 | 2008-06-12 | 底部阳极肖特基二极管 |
Country Status (3)
Country | Link |
---|---|
US (3) | US7633135B2 (zh) |
CN (2) | CN103137712B (zh) |
TW (1) | TWI383507B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102687276A (zh) * | 2010-02-17 | 2012-09-19 | 株式会社三社电机制作所 | Pin二极管 |
CN105931963A (zh) * | 2016-07-06 | 2016-09-07 | 株洲中车时代电气股份有限公司 | 一种碳化硅PiN二极管的结终端结构的制造方法 |
CN109427914A (zh) * | 2017-08-31 | 2019-03-05 | 艾赛斯有限责任公司 | 电荷载流子提取反向二极管 |
CN113471302A (zh) * | 2021-07-09 | 2021-10-01 | 弘大芯源(深圳)半导体有限公司 | 一种带内外电位保护环的肖特基二极管 |
Families Citing this family (13)
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US8148815B2 (en) * | 2008-10-13 | 2012-04-03 | Intersil Americas, Inc. | Stacked field effect transistor configurations |
US8168490B2 (en) * | 2008-12-23 | 2012-05-01 | Intersil Americas, Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
CA2794011C (en) * | 2010-03-22 | 2019-09-17 | Clear Lam Packaging, Inc. | Biopolymer roll stock for form-fill-sealed article |
US8513083B2 (en) | 2011-08-26 | 2013-08-20 | Globalfoundries Inc. | Methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processes |
US8610235B2 (en) * | 2011-09-22 | 2013-12-17 | Alpha And Omega Semiconductor Incorporated | Trench MOSFET with integrated Schottky barrier diode |
TWI602308B (zh) * | 2013-12-17 | 2017-10-11 | 國立清華大學 | 蕭特基二極體元件 |
CN108475703B (zh) * | 2016-01-05 | 2021-05-18 | 三菱电机株式会社 | 碳化硅半导体装置 |
RU176768U1 (ru) * | 2016-02-11 | 2018-01-29 | Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") | Компактная модель диода с вискером терагерцового диапазона |
KR102430498B1 (ko) | 2016-06-28 | 2022-08-09 | 삼성전자주식회사 | 쇼트키 다이오드를 갖는 전자 소자 |
CN108155092B (zh) * | 2017-12-23 | 2020-06-02 | 中国电子科技集团公司第五十五研究所 | 一种bcb辅助增强的肖特基二极管阳极空气桥制作方法 |
CN111129163B (zh) * | 2019-12-05 | 2023-06-27 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
US20230143171A1 (en) * | 2021-11-05 | 2023-05-11 | Virginia Tech Intellectual Properties, Inc. | Charge balanced power schottky barrier diodes |
CN117059672B (zh) * | 2023-10-11 | 2024-01-23 | 通威微电子有限公司 | 一种集成sbd的半导体器件及其制作方法 |
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US5545909A (en) * | 1994-10-19 | 1996-08-13 | Siliconix Incorporated | Electrostatic discharge protection device for integrated circuit |
US5843796A (en) * | 1995-09-11 | 1998-12-01 | Delco Electronics Corporation | Method of making an insulated gate bipolar transistor with high-energy P+ im |
KR970054363A (ko) * | 1995-12-30 | 1997-07-31 | 김광호 | 다이오드를 내장한 절연게이트 바이폴라 트랜지스터 및 그 제조방법 |
DE19616605C2 (de) * | 1996-04-25 | 1998-03-26 | Siemens Ag | Schottkydiodenanordnung und Verfahren zur Herstellung |
US5859465A (en) * | 1996-10-15 | 1999-01-12 | International Rectifier Corporation | High voltage power schottky with aluminum barrier metal spaced from first diffused ring |
JPH10189761A (ja) * | 1996-12-20 | 1998-07-21 | Fuji Electric Co Ltd | 半導体装置 |
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-
2007
- 2007-07-22 US US11/880,497 patent/US7633135B2/en not_active Expired - Fee Related
-
2008
- 2008-06-12 CN CN201310029746.0A patent/CN103137712B/zh not_active Expired - Fee Related
- 2008-06-12 CN CN2008101251459A patent/CN101350369B/zh active Active
- 2008-06-24 TW TW097123614A patent/TWI383507B/zh active
-
2009
- 2009-12-11 US US12/653,345 patent/US8044486B2/en active Active
-
2011
- 2011-06-30 US US13/135,371 patent/US8283243B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102687276A (zh) * | 2010-02-17 | 2012-09-19 | 株式会社三社电机制作所 | Pin二极管 |
CN102687276B (zh) * | 2010-02-17 | 2015-03-11 | 株式会社三社电机制作所 | Pin二极管 |
CN105931963A (zh) * | 2016-07-06 | 2016-09-07 | 株洲中车时代电气股份有限公司 | 一种碳化硅PiN二极管的结终端结构的制造方法 |
CN105931963B (zh) * | 2016-07-06 | 2019-12-03 | 株洲中车时代电气股份有限公司 | 一种碳化硅PiN二极管的结终端结构的制造方法 |
CN109427914A (zh) * | 2017-08-31 | 2019-03-05 | 艾赛斯有限责任公司 | 电荷载流子提取反向二极管 |
CN109427914B (zh) * | 2017-08-31 | 2024-01-30 | 艾赛斯有限责任公司 | 电荷载流子提取反向二极管 |
CN113471302A (zh) * | 2021-07-09 | 2021-10-01 | 弘大芯源(深圳)半导体有限公司 | 一种带内外电位保护环的肖特基二极管 |
CN113471302B (zh) * | 2021-07-09 | 2022-10-14 | 弘大芯源(深圳)半导体有限公司 | 一种带内外电位保护环的肖特基二极管 |
Also Published As
Publication number | Publication date |
---|---|
US20090020843A1 (en) | 2009-01-22 |
CN103137712A (zh) | 2013-06-05 |
US20110287616A1 (en) | 2011-11-24 |
US7633135B2 (en) | 2009-12-15 |
TW200905890A (en) | 2009-02-01 |
TWI383507B (zh) | 2013-01-21 |
CN101350369B (zh) | 2013-03-20 |
US8044486B2 (en) | 2011-10-25 |
US20100133644A1 (en) | 2010-06-03 |
CN103137712B (zh) | 2015-09-16 |
US8283243B2 (en) | 2012-10-09 |
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