CN101350327B - 局部硅氧化隔离结构的制备方法 - Google Patents
局部硅氧化隔离结构的制备方法 Download PDFInfo
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- CN101350327B CN101350327B CN2007100939537A CN200710093953A CN101350327B CN 101350327 B CN101350327 B CN 101350327B CN 2007100939537 A CN2007100939537 A CN 2007100939537A CN 200710093953 A CN200710093953 A CN 200710093953A CN 101350327 B CN101350327 B CN 101350327B
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- silicon
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CN2007100939537A CN101350327B (zh) | 2007-07-17 | 2007-07-17 | 局部硅氧化隔离结构的制备方法 |
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CN2007100939537A CN101350327B (zh) | 2007-07-17 | 2007-07-17 | 局部硅氧化隔离结构的制备方法 |
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CN101350327A CN101350327A (zh) | 2009-01-21 |
CN101350327B true CN101350327B (zh) | 2011-03-23 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102082091B (zh) * | 2009-11-30 | 2012-07-11 | 上海华虹Nec电子有限公司 | 改善高密度等离子体化学气相淀积的磷硅玻璃形貌的方法 |
CN106206282A (zh) * | 2015-04-29 | 2016-12-07 | 北大方正集团有限公司 | 半导体器件上形成场氧化层的制备方法 |
CN113130377A (zh) * | 2021-04-14 | 2021-07-16 | 上海积塔半导体有限公司 | 减小硅局部氧化层的鸟嘴宽度的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1035916A (zh) * | 1988-02-15 | 1989-09-27 | 金星半导体株式会社 | 用干法刻蚀多晶硅的局部氧化硅法 |
CN1732563A (zh) * | 2002-12-26 | 2006-02-08 | 英特尔公司 | 用于完全耗尽soi器件的locos隔离 |
CN1910747A (zh) * | 2004-08-17 | 2007-02-07 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
CN1964016A (zh) * | 2005-11-10 | 2007-05-16 | 上海华虹Nec电子有限公司 | 在高压集成电路中实现sti的方法 |
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- 2007-07-17 CN CN2007100939537A patent/CN101350327B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1035916A (zh) * | 1988-02-15 | 1989-09-27 | 金星半导体株式会社 | 用干法刻蚀多晶硅的局部氧化硅法 |
CN1732563A (zh) * | 2002-12-26 | 2006-02-08 | 英特尔公司 | 用于完全耗尽soi器件的locos隔离 |
CN1910747A (zh) * | 2004-08-17 | 2007-02-07 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
CN1964016A (zh) * | 2005-11-10 | 2007-05-16 | 上海华虹Nec电子有限公司 | 在高压集成电路中实现sti的方法 |
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CN101350327A (zh) | 2009-01-21 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206 Jinqiao Road, Pudong New Area Jinqiao Export Processing Zone, Shanghai, 1188 Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |