CN101331600A - 具有涂有聚合物的铜线的半导体封装及其制造方法 - Google Patents

具有涂有聚合物的铜线的半导体封装及其制造方法 Download PDF

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Publication number
CN101331600A
CN101331600A CNA2007800007155A CN200780000715A CN101331600A CN 101331600 A CN101331600 A CN 101331600A CN A2007800007155 A CNA2007800007155 A CN A2007800007155A CN 200780000715 A CN200780000715 A CN 200780000715A CN 101331600 A CN101331600 A CN 101331600A
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Prior art keywords
copper
copper cash
polymer
semiconductor chip
methyl
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CNA2007800007155A
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English (en)
Inventor
吴周锡
金义德
朴琦锡
辛承桓
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Hanwha TotalEnergies Petrochemical Co Ltd
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Hanwha Total Petrochemicals Co Ltd
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Publication of CN101331600A publication Critical patent/CN101331600A/zh
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Abstract

本发明涉及具有铜线或铜合金线的半导体封装，所述铜线或铜合金线保持优良的可靠性和防止电特性劣化的特性。半导体封装包括半导体芯片焊盘、端子和用于连接半导体芯片焊盘和端子的涂有聚合物的线。根据本发明，相比于金线，涂有聚合物的铜线或铜合金线可以提供电阻更低、结构硬、成本更低、高环境温度下的耐久性增加、热导率更高和发热更低的改进效能。

Description

具有涂有聚合物的铜线的半导体封装及其制造方法
技术领域
本发明涉及半导体封装及其制造方法，尤其是涉及一种具有涂有聚合物的铜线的半导体封装及其制造方法。
背景技术
通常，为了从/向外部输入/输出半导体芯片的集成电路所必需的信号，在半导体芯片上提供多个用于输入/输出信号的焊盘，并且通过使用接合线(bonding wire)而将焊盘和引线框架(lead frame)电连接起来。
因为半导体芯片是由类似在外部碰撞中很脆弱的玻璃的晶体来构造的并且焊盘的尺寸非常小，所以半导体芯片不可能直接连接到外部电路以传送信号。因此，使用引线框架作为输入/输出信号的端子。
对于接合线，使用例如金的小电阻材料作为布线材料来在半导体芯片的焊盘和引线框架之间传送信号。此外，用树脂或陶瓷来封装半导体芯片、引线框架和接合线，以使其免受外部碰撞和外界物质影响。
根据一般的趋势，将半导体封装形成为在尺寸上越来越小且越来越薄。从而，进一步将半导体芯片小型化，并且缩短半导体芯片和引线框架之间的距离。然而，将焊盘和引线框架电连接起来的接合线必须以最短距离保持回路，同时即使环境温度改变也防止所述接合线短路或断路。
在一般的半导体封装中，半导体芯片的接合到引线框架的芯片衬垫(die pad)的芯片焊盘，和类似引线框架的内部引线的外部端子通过导线相互电连接起来。主要将金用于所述导线。金在本领域中是公知的，然而，金线非常贵并且具有在高温中可靠性显著降低的特征。此外，因为金线较软，所以其具有容易被外力变形的缺点。
为了克服这种缺点，提供了其中基于重量百分比以ppm为单位将诸如Be、Ca等金属材料添加或掺杂到高纯度金中的常规接合线。然而，常规接合线没有显示出完全改变金的特性的改进效能。
因此，根据要求半导体封装能够以低功耗高速操作并且以低成本制造的新趋势，开展对相比于金线具有更佳特性的铜线的研究。因为铜线具有比金线更低的电阻，所以可以增强比如半导体封装操作速度的电特性，并且铜线在价格上是适中的。此外，因为铜线相比于金线具有更高的热导率，所以其具有易于散热的优点。
然而，当铜线暴露于外部环境时，例如在线接合过程中，存在铜线的表面会被氧化的缺点，因此劣化了铜线的可靠性和电特性。即，在铜线的表面被氧化的情况下，电阻值增大，因此电特性劣化了。此外，接合强度降低并且可靠性也劣化了。特别是，如果在线接合过程中，氧化了毛细管的端部的球形成部分，则在毛细管的该端部不会发生放电，从而球不会形成为圆形。此外，尽管球通常形成为圆形，但在线接合过程之后其附着力会显著降低。
为了克服上述缺点，在日本专利特开2000-195892号公报中提出了用聚合物涂覆铜线表面的方法。然而，在该方法中，因为将聚合低聚物涂覆在铜线表面上并且接着通过必要的光辐射过程对其进行硬化，所以需要有机溶剂，还需要用于硬化过程的必要设备。因此，存在如下问题：上述方法不经济也不安全，并且难以将聚合物膜涂覆得均匀且薄。
发明内容
技术问题
本发明的一个目的是提供涂有聚合物的铜线，该铜线可以保持良好特性且抑制其氧化，由此防止可靠性和电特性劣化。
本发明的另一目的是提供具有所述涂有聚合物的铜线的半导体封装。
技术方案
本发明的又一目的是提供制造所述半导体封装的方法。
可以通过提供包括涂有聚合物的铜线的半导体封装来实现本发明的前述和/或其它方面。优选的是，用聚合物乳液形成聚合物涂覆膜，优选地从聚苯乙烯类(polystyrenics)和聚丙烯酸类(polyacrylics)的组中选择所述聚合物乳液，并且涂覆有所述聚合物乳液的层的厚度是10～500nm。代替铜线，可以使用铜合金线，该铜合金线包括与铜熔合的包括银和金的组中的至少一种。
根据本发明的半导体封装包括涂覆有从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液的铜线或铜合金线，该铜线或铜合金线与半导体芯片焊盘和端子相连接。
优选的是，所述聚合物涂覆膜由优选从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液形成，并且涂覆有所述聚合物乳液的层的厚度是10～500nm。代替铜线，可以使用铜合金线，该铜合金线包括与铜熔合的包括银和金的组中的至少一种。本发明的半导体封装还包括具有所述半导体芯片焊盘的半导体芯片、其上附接有所述半导体芯片的引线框架焊盘和用于完全包覆所述半导体芯片、所述引线框架焊盘的一部分和引线的一部分的模制材料。
此外，根据本发明的其它方面，提供了制造半导体封装的方法，该方法包括以下步骤：提供半导体芯片焊盘和端子；以及通过铜线或铜合金线将所述半导体芯片焊盘和所述端子连接起来，所述铜线或铜合金线涂覆有从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液，并且所述铜线或铜合金线的一端接合到所述半导体芯片焊盘，而其另一端接合到所述端子。
优选的是，聚合物涂覆膜具有10～500nm的厚度，还包括从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液。
优选的是，所述铜合金线包括与铜熔合的包括银和金的组中的至少一种。
在涂覆有聚合物膜的铜线或铜合金线中，聚合物涂覆膜由优选从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液形成。所述聚合物乳液具有十万到百万的分子量并且还具有10～200nm的粒径。通过使用水作为溶剂，相比于常规涂覆过程进一步改进了成本和可靠性。还可以通过使用没有比如紫外线的单独光辐射方式的一般烘干过程，来容易地形成聚合物膜。此外，因为可以在水性乳液聚合期间控制乳液颗粒的大小，所以可以精确地控制涂覆膜的厚度。
根据本发明的制造聚合物乳液的方法包括以下步骤：
a)对从苯乙烯类(styrenics)、(甲基)丙烯酸或(甲基)丙烯酸酯类单体中选择的至少一种进行聚合；
b)制备水分散性溶液，在步骤a)制造的聚合物水分散在该水分散性溶液中；
c)在所述水分散性溶液中添加从苯乙烯类、(甲基)丙烯酸或(甲基)丙烯酸酯类单体中选择的至少一种，并对其进行乳液聚合。
附图说明
图1是根据本发明的具有涂有聚合物的铜线的半导体封装的横截面图；
图2是示出图1的半导体封装的铜线的切开部分的立体图；
图3和图4是分别示出接合到半导体芯片的金属电极焊盘的金线和铜线的横截面图；以及
图5是说明在制造图1的半导体封装的方法中的线接合过程的图。
主要元件的详细说明
110：引线框架焊盘
120、310：半导体芯片
130：环氧树脂
122、320、340：铝电极焊盘
124：钝化膜
140：引线框架的内部导线
150：涂有聚合物的铜线
152、350：铜线
154：聚合物涂覆膜
155：铜球
330：金线
410：绕线轴
420：储线容器的盖
431、432：辊
440：支架
450：毛细管
460：喷气嘴
具体实施方式
现在，将参考附图描述本发明。
图1是根据本发明的具有涂有聚合物的铜线的半导体封装的横截面图，图2是示出图1的半导体封装的铜线的切开部分的立体图。
参考图1，半导体芯片120通过比如环氧树脂130的接合手段附接在引线框架焊盘110上。在半导体芯片120的表面上设置铝电极焊盘122，并且在半导体芯片120的不设置铝电极焊盘122的其它表面上设置钝化膜124。经由涂有聚合物的铜线150将铝电极焊盘122和引线框架的内部导线140电连接起来。尽管在图中未示出，但引线框架焊盘110的上部、半导体芯片120、引线框架的内部引线140和涂有聚合物的铜线150覆盖有EMC(环氧树脂模塑料)。
参考图2，涂有聚合物的铜线150由设置于其中的铜线152和环绕铜线152进行包覆的聚合物涂覆膜154组成。代替铜线152，可使用其中将铜与其它物质熔合的铜合金线。例如，可以使用其中将铜与银或金熔合或者必要时与银和金熔合的铜合金线。因此，下面将描述的铜线的说明同样适用于铜合金线。聚合物涂覆膜154由从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液组成。优选的是，聚合物涂覆膜154具有10～50nm的厚度(d1)。如果聚合物涂覆膜154具有小于10nm的厚度，则外部环境可以氧化铜线。然而，如果聚合物涂覆膜154具有大于500nm的厚度，因为防止氧化的性能不再增强，这是不经济的。此外，如果聚合物涂覆膜154具有过大的厚度，则不易于在毛细管的端部通过放电形成球。因此，聚合物涂覆膜154具有的厚度优选为10～500nm，更优选为80～300nm。
另外，相比于具有8.8×1010N/m2的杨氏模量的金线(其是接合状态相对于外力的硬度准则)，铜线具有13.6×1010N/m2的更大的杨氏模量。并且在价格方面，铜线152大约是金线的40％～50％，且涂有聚合物的铜线150大约是金线的50％～60％。
图3和4是分别示出接合到半导体芯片的金属电极焊盘的金线和铜线的横截面图。
参考图3，如果金线330接合到在半导体芯片310上形成的铝电极焊盘320，则发生铝和金之间的称为金属间生长的现象，从而铝电极焊盘320中的铝生长到金线330中。因而，铝电极焊盘330的一部分(图中的“A”)压入到金线330中，从而在铝电极焊盘320和金线330之间的接触面增大了。如果接触面增大，则铝电极焊盘320和金线330之间的接触电阻增大，由此劣化了电特性。特别是，温度越高，铝电极焊盘320的压入厚度d2增加得越多，并且当温度超过期望水平时，其增加速率还会增大。
参考图4，如果把铜线350接合到在半导体芯片310上形成的铝电极焊盘340，则几乎不发生铝和铜之间的金属间生长，因而铝电极焊盘340的上部几乎不压入到铜线350中。因此，在铝电极焊盘340和铜线330之间的接触面不会异常地增大。
下面两个因素造成了使用铜线情况下的电阻值小于使用金线情况下的电阻值的现象。首先，在使用铜线的情况下，在铜和铝之间或在铜和包含铜和硅树脂的铝之间较少发生金属间生长。其次，铜在20℃的温度下具有大约1.67μΩcm的比电阻，而金在20℃的温度下具有大约2.4μΩcm的比电阻。
图5是说明在制造图1的半导体封装的方法中的线接合过程的图。
参考图5，涂有聚合物(图2中的154)的铜线150缠绕在置于由储线容器的盖420限定的内部空间中的绕线轴410上。可旋转地设置绕线轴410。在常规储线容器中，将氮气注射口设置为通过盖420，从而在储存有铜线150的内部空间中提供抑制氧化的氮气。然而，在本发明中，因为铜线本身包覆有聚合物涂覆膜，所以氮气注射口不是必需的。此外，盖420的一部分被开口，以便可将涂有聚合物的铜线150提供到外部。通过第一辊431、第二辊432和支架440将涂有聚合物的铜线150从储线容器提供到毛细管450。提供到毛细管450的涂有聚合物的铜线150具有通过在毛细管450外部的强放电形成的球155。通过典型的方式，将具有球155的涂有聚合物的铜线150接合到在半导体芯片120上形成的铝电极焊盘122的表面上。同时，当由在毛细管450的端部产生的放电熔化铜和聚合物涂覆膜时，铜的一部分可能被氧化。为了防止这种氧化，需要单独的喷气嘴460。
以下，将描述根据本发明的一些制造实施例和实施方式。然而，本发明不限于所述制造实施例和实施方式。
第一制造实施例
在具有搅拌器的100ml的高压化学反应器中混合苯乙烯(10.0g)、丙烯酸(10.0g)和α-甲基苯乙烯(10.0g)的混合物以及叔丁基过氧化苯甲酸酯(1.2g)、二丙二醇甲基醚(3.0g)、丙烯酸-2-羟基乙酯(10.0g)和甲基丙烯酸-2-羟基乙酯(10.0g)的混合物，接着将它们加热到200℃的温度。在该温度下搅拌反应物20分钟，接着在室温下冷却，然后在真空烘箱中干燥以获得最终的反应物。
在80g的水和氨水的混合物中溶解15g最终反应物。此时，如果需要则将溶解的反应物加热到大约90℃的温度，并且通过控制氨水的量将溶液的pH值控制在9.0。在将过硫酸钾(1.5g)添加到溶液后，将溶液的温度调节到80℃。接着在搅拌溶液的同时，用两小时向所述溶液缓慢添加苯乙烯(20g)和丙烯酸-2-乙基己酯(20g)的混合溶液。在完成了添加单体混合物之后，在同样的温度下再搅拌溶液一小时，由此获得其中分散有大约70nm的颗粒的聚合树脂乳液。
第二制造实施例
将过硫酸铵(1.0g)添加到甲基丙烯酸(5.0g)、丙烯酸(5.0g)、丙烯酸乙酯(20.0g)和丙烯腈(3.0g)的混合物中。并且将混合物放在具有搅拌器的100ml的高压化学反应器中，还添加0.3g的十二烷基苯磺酸钠。接着，将混合物加热到80℃的温度。在该温度下搅拌反应物两小时，接着在室温下冷却，以获得最终反应物。
通过控制氨水的量将最终反应物的pH值控制在9.0。在将过硫酸铵(1.0g)添加到溶液后，将溶液的温度调节到80℃。接着，在搅拌溶液的同时，用一小时向所述溶液缓慢添加苯乙烯(50g)和甲基丙烯酸(20g)且其中还添加了6g的壬基苯基醚的混合溶液。在完成了添加单体混合物之后，在同样的温度下再搅拌溶液一小时，由此获得其中散布有大约50nm的颗粒的聚合物树脂乳液。
第一实施方式
将在第一制造实施例中获得的树脂乳液的水溶液涂覆到具有50μm直径的铜线上，由此获得涂有聚合物的铜线。该涂覆过程如下。
用水稀释用于涂覆聚合物膜的树脂乳液，以便获得具有20％固态粉末的新树脂乳液。将该新树脂乳液放在维持在60℃温度的容器中。接着，将具有50μm直径的铜线以大约100m/s的速度穿过容器。并且，在室温下以大约100m/s的速度用水冲洗涂有聚合物的铜线一次且还用水和乙醇的混合溶液冲洗该铜线一次，以便去除没有附着到铜线表面的树脂颗粒。
接着，在40℃的温度下以缠绕的状态烘干涂有聚合物的铜线。在铜线上涂覆的聚合物涂覆膜的测量厚度是149nm。在相同条件下重复的其它实验结果中，聚合物涂覆膜的厚度是119nm。
第二实施方式
如表1中所示，除了树脂量不同之外，制造过程和第一实施方式中基本相同。聚合物涂覆膜的平均厚度是88nm，并且在相同条件下重复的其它实验结果中，聚合物涂覆膜的厚度是84nm。
第三实施方式
如表1中所示，除了树脂量和涂覆树脂的种类不同之外，制造过程和第一实施方式中基本相同。聚合物涂覆膜的平均厚度是228nm。
表1
Figure A20078000071500111
实验示例
针对五种在上述实施方式中获得的涂有聚合物膜的铜线和九种未涂覆所述聚合物膜的具有50μm直径的铜线，对于绝缘电阻、欧姆电阻和变色测试进行了实验。
1)绝缘电阻测试
在使用微型压缩测试机以1mN的压力按压第一到第三实施方式以及第一和第九比较例的铜线之后，测量每一个电阻并且在表2中表示。
等级：评估标准
○：在和铜线接触100次之后测量电阻值大于108Ω
△：在和铜线接触100次之后测量电阻值大于104Ω且小于108Ω
×：在和铜线接触100次之后测量电阻值小于104Ω
表2铜线的绝缘电阻评估
  实验编号   绝缘电阻   比较例   绝缘电阻
  1-1   ○   1   ×
  1-2   ○   2   ×
  2-1   △   3   ×
  2-2   △   4   ×
  3   ○   5   ×
  6   ×
  7   ×
  8   ×
  9   ×
2)欧姆电阻测试
将第一到第三实施方式以及第一和第九比较例的铜线在具有85％的湿度和85℃的温度的容器中放置一个月之后，接着将其烘干以获得评估样本。接着，使用微型压缩测试机以足以去掉聚合物膜的15mN的压力按压第一到第三实施方式和第一和第九比较例的铜线，测量每一个电阻并且在表3中表示。
等级：评估标准
○：在和铜线接触100次之后测量电阻值小于5Ω
△：在和铜线接触100次之后测量电阻值大于5Ω且小于10Ω
×：在和铜线接触100次之后测量电阻值大于10Ω
表3铜线的欧姆电阻评估
  实验编号   绝缘电阻   比较例   绝缘电阻
  1-1   ○   1   ×
  1-2   ○   2   ×
  2-1   ○   3   ×
  2-2   △   4   ×
  3   ○   5   ×
  6   ×
  7   ×
  8   ×
  9   ×
3)变色测试
在将第一到第三实施方式以及第一和第九比较例的铜线在具有85％的湿度和85℃的温度的容器中放置一个月之后，接着将其烘干以获得评估样本。接着，观察铜线因氧化的变色并且将结果表示在表4中。
等级：评估标准
○：未观察到变色
△：几乎未观察到变色
×：观察到变色
表4铜线的变色评估
  实验编号   绝缘电阻   比较示例   绝缘电阻
  1-1   ○   1   ×
  1-2   ○   2   ×
  2-1   ○   3   ×
  2-2   ○   4   ×
  3   ○   5   ×
  6   ×
  7   ×
  8   ×
  9   ×
如表1到4中所示，在第一到第三实施方式中的涂有聚合物的铜线相比于未涂有聚合物涂覆膜的其它铜线具有更优良的绝缘性能，即使在保存了长时段后涂有聚合物的铜线还具有更优良的防氧化性能，因而未观察到欧姆电阻和变色的增加。此外，根据三个实施方式和第一和第九比较例的结果，可以确定当聚合物涂覆膜具有大于10nm，优选大于80nm的厚度时，涂有聚合物的铜线具有良好的绝缘特性。
工业适用性
根据如上描述的本发明，所述半导体封装及其制造方法具有如下优点：
首先，相比于金线，其可以提供电阻更低、结构较硬、成本更低、高环境温度下的耐久性增强、热导率更高和发热更低的改进效能。
其次，相比于仅使用铜线的情况，在维持铜线优点的同时，其通过抑制氧化可提供改进的电特性，并可提供增强的接合力和改进的可靠性。
第三，使用聚合物乳液在铜线上涂覆聚合物膜的方法是经济且稳定的，并且还具有通过在制造聚合物乳液时控制乳液的颗粒来精确控制聚合物涂覆膜厚度的优点。
本领域技术人员将理解，在前述说明书中公开的概念和具体实施方式可以容易地用作修改或设计用于实现本发明的相同目的的其它实施方式的基础。本领域技术人员还将理解，这种等效实施方式不会偏离如在权利要求中阐述的本发明的精神和范围。

Claims (9)

1、一种半导体封装，其包括：
与半导体芯片焊盘和端子相连接，并且涂覆有从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液的铜线或铜合金线。
2、如权利要求1所述的半导体封装，其中，涂覆有所述聚合物乳液的层的厚度是10～500nm。
3、如权利要求1所述的半导体封装，其还包括：
具有所述半导体芯片焊盘的半导体芯片；
附接有所述半导体芯片的引线框架焊盘；和
用于完全包覆所述半导体芯片、所述引线框架焊盘的一部分和引线的一部分的模制材料。
4、如权利要求1所述的半导体封装，其中，所述铜合金线包括与铜熔合的包括银和金的组中的至少一种。
5、如权利要求1到4中的任何一项所述的半导体封装，其中，所述聚合物乳液是通过包括以下步骤的方法来制造的：
a)对从苯乙烯类、(甲基)丙烯酸或(甲基)丙烯酸酯类单体中选择的至少一种进行聚合；
b)制备水分散性溶液，在步骤a)制造的聚合物水分散在该水分散性溶液；
c)在所述水分散性溶液中添加从苯乙烯类、(甲基)丙烯酸或(甲基)丙烯酸酯类单体中选择的至少一种，并对其进行乳液聚合。
6、一种用于制造半导体封装的方法，其包括以下步骤：
提供半导体芯片焊盘和端子；和
通过铜线或铜合金线连接所述半导体芯片焊盘和所述端子，所述铜线或铜合金线涂覆有从聚苯乙烯类和聚丙烯酸类的组中选择的聚合物乳液，并且所述铜线或铜合金线的一端接合到所述半导体芯片焊盘，而其另一端接合到所述端子。
7、如权利要求6所述的方法，其中，涂覆有所述聚合物乳液的层的厚度是10～500nm。
8、如权利要求6所述的方法，其中，所述铜合金线包括与铜熔合的包括银和金的组中的至少一种。
9、如权利要求6到8中的任何一项所述的方法，其中，所述聚合物乳液是通过包括以下步骤的方法来制造的：
a)对从苯乙烯类、(甲基)丙烯酸或(甲基)丙烯酸酯类单体中选择的至少一种进行聚合；
b)制备水分散性溶液，在步骤a)制造的聚合物水分散在该水分散性溶液中；
c)在所述水分散性溶液中添加从苯乙烯类、(甲基)丙烯酸或(甲基)丙烯酸酯类单体中选择的至少一种，并对其进行乳液聚合。
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