CN101325197A - 具有共同封装的肖特基二极管的高压高功率升压变换器 - Google Patents

具有共同封装的肖特基二极管的高压高功率升压变换器 Download PDF

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CN101325197A
CN101325197A CNA2008101098622A CN200810109862A CN101325197A CN 101325197 A CN101325197 A CN 101325197A CN A2008101098622 A CNA2008101098622 A CN A2008101098622A CN 200810109862 A CN200810109862 A CN 200810109862A CN 101325197 A CN101325197 A CN 101325197A
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booster converter
schottky diode
chip region
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张艾伦
郑伟强
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Alpha and Omega Semiconductor Ltd
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Abstract

本发明公开了一种高压高功率的升压变换器。该升压变换器包括升压变换器IC和分立肖特基二极管，两者共同封装在标准的单共用芯片区上。

Description

具有共同封装的肖特基二极管的高压高功率升压变换器
技术领域
本发明涉及升压变换器，更具体地涉及具有共同封装的肖特基二极管的高压高功率升压变换器。
背景技术
升压变换器电路被用于将输入电压升高成较高的输出电压。例如在运用于便携式显示器时，升压比可以达到10或更大。升压变换器可以用于向LCD(液晶显示器)光的一系列白色LED(发光二极管)提供电源。在这样的情况下，升压变换器可以用于将5伏的输入电压转换成直至50伏的输出电压。升压变换器通常包括五个基本元件，即功率半导体开关，二极管，电感器，电容器和诸如脉宽调制(PWM)控制器的调制控制器。可以有很多不同种类的控制系统，脉宽调制仅是其中之一。
高压高功率升压变换器可用于诸如LED面板电源或背光驱动器的很多应用场合。由于PCB(印刷电路板)空间总是有限，因此对于全部解决方案而言需要小的形状因素。同时，减小PCB的面积也可以降低生产成本。
图1是现有技术中的升压变换器集成电路(IC)100的电路示意图。如图1所示，升压变换器电路100包括安装到第一芯片区102上的包含脉宽调制控制器104的低电压集成电路，外部检测电阻器Rs和外部高压NFET 106。电感器L可以直接连接在控制器104的输入电压VIN和NFET 106的漏级D之间。外部检测电阻Rs可以连接于NFET 106的源级S和接地端之间。外部高压(HV)肖特基二极管DSch和电容器C串联连接在漏级D和接地端之间。在肖特基二极管DSch和电容器器C之间可获得输出电压VOUT。肖特基二极管的两端可以存在电压降VDIODE。肖特基二极管被键合到第二芯片区108上。
如图1所示的类型的升压变换器已被成功推出，其在较小的封装中具有集成FET。然而，这样的升压变换器使用外部分立肖特基二极管。遗憾的是，大多数可以用商业IC工艺得到的集成肖特基二极管不具有有效满足功率(电流)或电压要求所需的空间。对于高功率运行，二极管的结面积必须大，如此二极管才能加载高电流并耐受高电压。
肖特基二极管和IC的共同封装已在用于LCD背光的商业升压变换器中出现。带有电流管制的升压DC/DC变换器的系列LED驱动器的实例是由飞兆半导体公司制造的FAN5606。该器件具有内置肖特基二极管并且不需要外部肖特基二极管。然而，虽然肖特基二极管可以与IC共同封装，但是这样的升压变换器仍需要两个芯片区，一个用于IC，一个用于二极管，如此就限制了能够包括在既定封装中的元件的活性区域。这样就要求较大的封装形状因素。另外，由于组件的复杂性和两个芯片区的引线框架的成本导致这样的器件的生产成本往往较高。
发明内容
本发明的目的是提供一种肖特基二极管和升压变换器集成电路共同封装在同一芯片电路板上的高压高功率升压变换器，其简化了共同封装的复杂性，由此降低了生产成本；另外，形成较小的封装形状，如此可以扩大包含在既定封装中的元件的活性区域，并提供有效满足功率(电流)或者电压要求的空间。
为达上述目的，本发明公开了一种升压变换器，其特征在于，该升压变换器包括升压变换器集成电路和具有顶部阳极和底部阴极的垂直分立肖特基二极管，其中，所述升压变换器集成电路和垂直分立肖特基二极管共同封装在共用的芯片区上。
所述的升压变换器集成电路包括控制器和N型场效应晶体管(NFET)；该控制器和NFET形成在共同的半导体芯片上。
所述分立肖特基二极管的顶部阳极连接到NFET的漏极。
所述升压变换器集成电路与共用芯片区电绝缘；该升压变换器集成电路的衬底是P型衬底；所述的衬底电连接到接地电压；该衬底与共用芯片区电绝缘；或者该衬底通过非导电环氧树脂层绝缘于共用芯片区，所选择的环氧树脂耐受升压变换器的全部额定输出电压。
所述升压变换器集成电路的衬底也可以是N型衬底并且电连接到输出电压。
所述升压变换器集成电路安装到第一芯片区上，所述垂直分立肖特基二极管安装到第二芯片区上，以及其中所述第一和第二芯片区附贴到共用的芯片区上；所述垂直分立肖特基二极管的底部阴极与第二芯片区电接触；该分立肖特基二极管用导电环氧树脂层附贴到第二芯片区上；所述垂直分立肖特基二极管的顶部阳极电连接到位于分立肖特基二极管和N型场效应晶体管之间的共用封装针脚上。
所述的升压变换器还包括电连接到控制器的电感器；该电感器电连接在控制器和肖特基二极管的顶部阳极之间。
本发明提供的肖特基二极管和升压变换器集成电路共同封装在同一芯片电路板上的高压高功率升压变换器，简化了共同封装的复杂性，降低了生产成本，形成较小的封装形状，如此可以扩大包含在既定封装中的元件的活性区域，并提供有效满足功率(电流)或者电压要求的空间。
通过参考以下各个附图，阅读下文对优选实施例的详细叙述，本发明的上述及其他的目标和优点对于本技术领域的普通技术人员来说无疑是显而易见的。
附图说明
图1是现有技术的升压变换器的电路示意图；
图2A是根据本发明的实施例的升压变换器的电路示意图；
图2B是图2A所示的升压转变器的一部分的垂直剖面图；
图2C是图2A所示的升压变换器的升压IC封装组件的俯视图；以及
图2D是图2A所示的升压变换器的另一种升压IC封装组件的俯视图。
具体实施方式
以下通过图2A～图2D，详细说明本发明的较佳实施例。
出于说明的目的，虽然下文的描述包含很多具体细节，但是任何熟知本领域的普通技术人员都能认识到对于下述细节的变化和替代都包含在本发明的范围内。因此，对下述本发明的示例性实施例的叙述对所主张的发明不丧失一般性并且不设置任何限制。
图2A是说明根据本发明的优选实施例的升压变换器200的电路示意图。如图2A所示，升压变换器200包括附贴到芯片区202上并与其电绝缘的升压变换器IC 207，和附贴到同一芯片区202上并与其电连接的垂直分立肖特基二极管203。升压变换器IC可以包括控制器201和具有源级S、漏级D和栅极G的高压N型场效应晶体管205。控制器201和NFET 205可以形成在共用的半导体芯片上。例如，升压变换器IC可以是位于加州米而皮塔斯的Intersil公司生产的型号EL7516的PWM升压调节器。如图2B所示，垂直分立肖特基二极管203可以包括位于提供顶部阳极208和底部阴极210的金属接触点之间的搀杂半导体218(例如，N型硅)。底部阴极210可以与芯片区202直接电接触。如本文所用，顶部阳极指位于垂直二极管结构的顶层或顶层附近的层次中的阳极，底部阴极指位于垂直二极管结构的底层或底层附近的层次中的阴极。所述二极管结构是一种垂直结构，其中二极管电流或多或少垂直于构成二极管结构的各个层次，如图2B中的箭头所示。举例来说并且不丧失一般性，垂直分立肖特基二极管203可以是位于加州的西湖村的二极管公司生产的型号SBI 40。
分立肖特基二极管203的阳极208可以直接键合于IC上的NFET 205的漏级D，或者键合到位于连接点J处的共用封装引脚上。底部阴极210可以直接连接到输出电压VOUT。分立NFET 205的源级S可以直接接地。外部电感器L可以直接连接在输入电压VIN和分立NFET 205的漏级D之间。电容器C可以连接在垂直分立肖特基二极管203的底部阴极210和接地端之间。在肖特基二极管203的阴极210和电容器C之间可获得输出电压VOUT。升压变换器IC207和分立肖特基二极管203可以共同封装在诸如标准的单芯片区引线框架的共用的芯片区202上，该芯片区202电连接到分立肖特基二极管203的底部阴极210。作为键合的结果，芯片区202可以维持在输出电压VOUT上。由于输出电压VOUT中没有任何大的信号开关波形，所以注入芯片区202的升压IC衬底的噪声将达到最小。
图2C和图2D是图2A所示的升压变换器200的升压IC封装组件的俯视平面图。在典型意义上，图2C显示了升压变换器200的升压IC封装组件230，其中升压变换器IC207包含与接地电压电接触的P型衬底。P型衬底通常接地，以对衬底和有源电路之间的连接点施加反偏压。如图2C所示，包含控制器201和NFET 205的升压变换器IC 207通过沉积于升压变换器IC207和芯片区202之间的不导电或绝缘环氧树脂层212附贴在芯片区202上。分立肖特基二极管203通过沉积于分立肖特基二极管203的底部阴极210和芯片区202之间的导电环氧树脂层214附贴在芯片区202上。升压变换器IC207和分立肖特基二极管203共同封装在诸如标准的单芯片区引线框架的共用的芯片区202上。升压变换器IC207和分立肖特基二极管203通过键合线216电连接到引线218，220。所有的元件都可以封装在一个塑料封装222中。分立肖特基二极管203的底部阴极210可以通过芯片区202和键合线216电连接到输出电压端。位于升压变换器IC 207上的NFET的漏级D也可以通过键合线216电连接到电感器L。位于升压变换器IC 207上的NFET的源极S也可以通过键合线216电连接到GND针脚。最好绝缘环氧树脂层212足够厚和/或其绝缘度能耐受与升压变换器IC 207的衬底两侧的压降等值的DC电压差。
图2D显示了包含升压变换器200的升压IC封装组件240，其中升压变换器IC 207包含电连接到输出电压的N型衬底。位于升压变换器IC 207上的NFET的源极S也可以通过键合线216电连接到GND针脚。升压IC封装组件240与IC封装组件230相类似，不同之处在于分立肖特基二极管203的底部阴极210电连接到与芯片区202直接接触的引线224，以及分立肖特基二极管203的顶部阳极208通过键合线216电连接到电感器L。在这种情况下，额定的阻断电压是不必要的。
如附图2A～2D所示，升压变换器IC 207和分立肖特基二极管203在共用芯片区202上的共同封装结构提供了低生产成本和小形状因素的优点。
虽然上文对本发明的优选实施例进行了完整的描述，但是还可以使用各种替代，修改和等效形式。因此，本发明的范围不应通过上文的描述确定，而是应该通过附后的权利要求及其等效内容的全部范围确定。任何技术特征不论是否优选都可以和任何其它不论是否优选的技术特征组合。在附后的权利要求中，原文中的不定冠词″A″或″An″指该冠词之后的项目的数量为一个或多个，除非另有明确的指定。附后的权利要求不应解释为其包括方法加功能的限制，除非这样的限制在所给出的权利要求中明确地指出。

Claims (16)

1.一种升压变换器，其特征在于，该升压变换器包括：
升压变换器集成电路；和
具有顶部阳极和底部阴极的垂直分立肖特基二极管，
其中，所述升压变换器集成电路和垂直分立肖特基二极管共同封装在共用的芯片区上。
2.如权利要求1所述的升压变换器，其特征在于，所述的升压变换器集成电路包括控制器和N型场效应晶体管。
3.如权利要求2所述的升压变换器，其特征在于，所述的控制器和N型场效应晶体管形成在共同的半导体芯片上。
4.如权利要求2所述的升压变换器，其特征在于，所述的分立肖特基二极管的顶部阳极连接到N型场效应晶体管的漏极。
5.如权利要求1所述的升压变换器，其特征在于，所述的升压变换器集成电路与共用芯片区电绝缘。
6.如权利要求5所述的升压变换器，其特征在于，所述的升压变换器集成电路的衬底是P型衬底。
7.如权利要求6所述的升压变换器，其特征在于，所述的衬底电连接到接地电压。
8.如权利要求7所述的升压变换器，其特征在于，所述的衬底与共用芯片区电绝缘。
9.如权利要求7所述的升压变换器，其特征在于，所述的衬底通过非导电环氧树脂层绝缘于共用芯片区，所选择的环氧树脂耐受升压变换器的全部额定输出电压。
10.如权利要求5所述的升压变换器，其特征在于，所述的升压变换器集成电路的衬底是N型衬底并且电连接到输出电压。
11.如权利要求1所述的升压变换器，其特征在于，所述的升压变换器集成电路安装到第一芯片区上，所述垂直分立肖特基二极管安装到第二芯片区上，以及其中所述第一和第二芯片区附贴到共用的芯片区上。
12.如权利要求11所述的升压变换器，其特征在于，所述的分立肖特基二极管的底部阴极与第二芯片区电接触。
13.如权利要求12所述的升压变换器，其特征在于，所述的分立肖特基二极管用导电环氧树脂层附贴到第二芯片区上。
14.如权利要求11所述的升压变换器，其特征在于，所述的顶部阳极电连接到位于分立肖特基二极管和N型场效应晶体管之间的共用封装针脚上。
15.如权利要求11所述的升压变换器，其特征在于，该升压变换器还包括电连接到控制器的电感器。
16.如权利要求15所述的升压变换器，其特征在于，所述的电感器电连接在控制器和肖特基二极管的顶部阳极之间。
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