CN101313388A - 用于化学机械抛光的摩擦减小辅助物 - Google Patents
用于化学机械抛光的摩擦减小辅助物 Download PDFInfo
- Publication number
- CN101313388A CN101313388A CNA2006800437962A CN200680043796A CN101313388A CN 101313388 A CN101313388 A CN 101313388A CN A2006800437962 A CNA2006800437962 A CN A2006800437962A CN 200680043796 A CN200680043796 A CN 200680043796A CN 101313388 A CN101313388 A CN 101313388A
- Authority
- CN
- China
- Prior art keywords
- polishing
- water
- substrate
- polishing system
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/287,039 US20070117497A1 (en) | 2005-11-22 | 2005-11-22 | Friction reducing aid for CMP |
| US11/287,039 | 2005-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101313388A true CN101313388A (zh) | 2008-11-26 |
Family
ID=38054171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800437962A Pending CN101313388A (zh) | 2005-11-22 | 2006-10-24 | 用于化学机械抛光的摩擦减小辅助物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070117497A1 (enExample) |
| JP (1) | JP2009516928A (enExample) |
| KR (1) | KR20080070675A (enExample) |
| CN (1) | CN101313388A (enExample) |
| TW (1) | TWI311091B (enExample) |
| WO (1) | WO2007149113A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110358454A (zh) * | 2019-07-20 | 2019-10-22 | 大连理工大学 | 一种通用化学机械抛光液 |
| CN113423799A (zh) * | 2019-10-03 | 2021-09-21 | 日产化学株式会社 | 用于消除激光标记周边的隆起的包含阳离子的研磨用组合物 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8162723B2 (en) * | 2006-03-09 | 2012-04-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten carbide surface |
| EP2634158B1 (en) * | 2011-05-24 | 2016-08-10 | Rohm and Haas Company | Improved quality multi-spectral zinc sulfide |
| EP2798669B1 (en) | 2011-12-28 | 2021-03-31 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
| CN102775916B (zh) * | 2012-07-16 | 2015-01-07 | 芜湖海森材料科技有限公司 | 一种提高蓝宝石表面质量的抛光组合物 |
| US9259818B2 (en) * | 2012-11-06 | 2016-02-16 | Sinmat, Inc. | Smooth diamond surfaces and CMP method for forming |
| JP6007094B2 (ja) * | 2012-12-18 | 2016-10-12 | 花王株式会社 | サファイア板用研磨液組成物 |
| JP6622963B2 (ja) * | 2013-01-04 | 2019-12-18 | 株式会社フジミインコーポレーテッド | 合金材料の研磨方法及び合金材料の製造方法 |
| WO2014132641A1 (ja) * | 2013-02-28 | 2014-09-04 | 株式会社フジミインコーポレーテッド | コバルト除去のための研磨スラリー |
| US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
| CN103589344B (zh) * | 2013-11-14 | 2015-06-10 | 上海新安纳电子科技有限公司 | 一种氧化铝抛光液的制备方法 |
| JPWO2016043089A1 (ja) * | 2014-09-16 | 2017-08-10 | 山口精研工業株式会社 | サファイア基板用研磨剤組成物 |
| KR102447178B1 (ko) | 2015-09-01 | 2022-09-26 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| KR102642825B1 (ko) * | 2016-02-16 | 2024-02-29 | 씨엠씨 머티리얼즈 엘엘씨 | Ⅲ-v 족 물질의 연마 방법 |
| US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| DE102017110198A1 (de) * | 2017-05-11 | 2018-11-15 | Walter Maschinenbau Gmbh | Schleif- und/oder Erodiermaschine sowie Verfahren zur Vermessung und/oder Referenzierung der Maschine |
| JP7071495B2 (ja) | 2017-11-15 | 2022-05-19 | サン-ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 材料除去操作を行うための組成物及びその形成方法 |
| US11879094B2 (en) | 2022-06-03 | 2024-01-23 | Halliburton Energy Services, Inc. | Enhancing friction reduction and protection of wellbore equipment during hydraulic fracturing |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2710997C3 (de) * | 1977-03-14 | 1980-08-14 | Dr. Karl Thomae Gmbh, 7950 Biberach | 4-Alkoxy carbonylamino-phenyläthanolamine, deren Herstellung und deren Verwendung als Arzneimittel |
| JPH0228112A (ja) * | 1988-04-21 | 1990-01-30 | Kaken Pharmaceut Co Ltd | 点眼用眼圧調整剤 |
| US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| DE3902753A1 (de) * | 1989-01-31 | 1990-08-02 | Henkel Kgaa | Verfahren zur hydrothermalen herstellung von kaliumsilikatloesungen mit hohem si0(pfeil abwaerts)2(pfeil abwaerts):k(pfeil abwaerts)2(pfeil abwaerts)0-molverhaeltnis |
| DE3938789A1 (de) * | 1989-11-23 | 1991-05-29 | Henkel Kgaa | Verfahren zur hydrothermalen herstellung von kaliumsilikatloesungen |
| DE19643592A1 (de) * | 1996-10-22 | 1998-04-23 | Bayer Ag | Verfahren zur Herstellung von alpha-Alkoxy-alpha-trifluormethyl-arylessigsäureestern und -arylessigsäuren |
| SG54606A1 (en) * | 1996-12-05 | 1998-11-16 | Fujimi Inc | Polishing composition |
| AU7147798A (en) * | 1997-04-23 | 1998-11-13 | Advanced Chemical Systems International, Inc. | Planarization compositions for cmp of interlayer dielectrics |
| TW593331B (en) * | 1997-07-25 | 2004-06-21 | Inspire Pharmaceuticals Inc | Method for large-scale production of di(uridine 5')-tetraphosphate and salts thereof |
| US6051605A (en) * | 1997-08-08 | 2000-04-18 | Warner-Lambert Company | Method of treating psychosis and schizophrenia |
| JPH11140427A (ja) * | 1997-11-13 | 1999-05-25 | Kobe Steel Ltd | 研磨液および研磨方法 |
| CO5070714A1 (es) * | 1998-03-06 | 2001-08-28 | Nalco Chemical Co | Proceso para la preparacion de silice coloidal estable |
| US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
| JP2003518122A (ja) * | 1999-12-21 | 2003-06-03 | ジーピーアイ エヌアイエル ホールディングズ インコーポレーテッド | ヒダントイン誘導体化合物、医薬合成品およびこれらの使用方法 |
| US6602117B1 (en) * | 2000-08-30 | 2003-08-05 | Micron Technology, Inc. | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| US6551935B1 (en) * | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
| US20030032078A1 (en) * | 2001-01-23 | 2003-02-13 | Board Of Regents, The University Of Texas System | Methods and compositions for the treatment of macular and retinal degenerations |
| JP3945745B2 (ja) * | 2001-03-09 | 2007-07-18 | 三井金属鉱業株式会社 | セリウム系研摩材及び研摩材スラリー並びにセリウム系研摩材の製造方法 |
| US6656241B1 (en) * | 2001-06-14 | 2003-12-02 | Ppg Industries Ohio, Inc. | Silica-based slurry |
| US6800218B2 (en) * | 2001-08-23 | 2004-10-05 | Advanced Technology Materials, Inc. | Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same |
| JP4008219B2 (ja) * | 2001-09-27 | 2007-11-14 | 触媒化成工業株式会社 | 研磨材 |
| JP4278020B2 (ja) * | 2001-10-30 | 2009-06-10 | 日揮触媒化成株式会社 | 研磨用粒子および研磨材の製造方法 |
| PA8557501A1 (es) * | 2001-11-12 | 2003-06-30 | Pfizer Prod Inc | Benzamida, heteroarilamida y amidas inversas |
| US6685755B2 (en) * | 2001-11-21 | 2004-02-03 | Saint-Gobain Abrasives Technology Company | Porous abrasive tool and method for making the same |
| US6827639B2 (en) * | 2002-03-27 | 2004-12-07 | Catalysts & Chemicals Industries Co., Ltd. | Polishing particles and a polishing agent |
| US6913517B2 (en) * | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
| JP2004128112A (ja) * | 2002-10-01 | 2004-04-22 | Renesas Technology Corp | 半導体装置の製造方法 |
| US20040242704A1 (en) * | 2003-03-14 | 2004-12-02 | University Of Washington, Techtransfer - Invention Licensing | Stabilized mutant opsin proteins |
| JP2005007520A (ja) * | 2003-06-19 | 2005-01-13 | Nihon Micro Coating Co Ltd | 研磨パッド及びその製造方法並びに研磨方法 |
| US7485241B2 (en) * | 2003-09-11 | 2009-02-03 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
| US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
| US7566808B2 (en) * | 2004-02-17 | 2009-07-28 | President And Fellows Of Harvard College | Management of ophthalmologic disorders, including macular degeneration |
| US20060252107A1 (en) * | 2005-02-22 | 2006-11-09 | Acucela, Inc. | Compositions and methods for diagnosing and treating retinal diseases |
| US20070039926A1 (en) * | 2005-08-17 | 2007-02-22 | Cabot Microelectronics Corporation | Abrasive-free polishing system |
-
2005
- 2005-11-22 US US11/287,039 patent/US20070117497A1/en not_active Abandoned
-
2006
- 2006-10-24 KR KR1020087012131A patent/KR20080070675A/ko not_active Withdrawn
- 2006-10-24 CN CNA2006800437962A patent/CN101313388A/zh active Pending
- 2006-10-24 WO PCT/US2006/041420 patent/WO2007149113A2/en not_active Ceased
- 2006-10-24 JP JP2008542318A patent/JP2009516928A/ja active Pending
- 2006-11-08 TW TW095141357A patent/TWI311091B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110358454A (zh) * | 2019-07-20 | 2019-10-22 | 大连理工大学 | 一种通用化学机械抛光液 |
| CN113423799A (zh) * | 2019-10-03 | 2021-09-21 | 日产化学株式会社 | 用于消除激光标记周边的隆起的包含阳离子的研磨用组合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080070675A (ko) | 2008-07-30 |
| WO2007149113A3 (en) | 2008-04-10 |
| TW200734117A (en) | 2007-09-16 |
| US20070117497A1 (en) | 2007-05-24 |
| WO2007149113A2 (en) | 2007-12-27 |
| WO2007149113A9 (en) | 2008-02-28 |
| JP2009516928A (ja) | 2009-04-23 |
| TWI311091B (en) | 2009-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101313388A (zh) | 用于化学机械抛光的摩擦减小辅助物 | |
| TWI513807B (zh) | 聚合物膜之化學機械平坦化 | |
| EP3055376B1 (en) | Mixed abrasive polishing compositions | |
| JP5313885B2 (ja) | 窒化シリコン材料を研磨するための組成物および方法 | |
| CN111108161B (zh) | 用于TiN-SiN化学机械抛光应用的高选择性的氮化物抑制剂 | |
| JP5596344B2 (ja) | コロイダルシリカを利用した酸化ケイ素研磨方法 | |
| TWI812595B (zh) | 用於阻擋層平坦化之化學機械研磨液 | |
| KR20090023640A (ko) | Cmp 적용에서의 조율가능한 선택성 슬러리 | |
| JP2011508423A (ja) | 金属除去速度を制御するためのハロゲン化物アニオン | |
| TWI787329B (zh) | 用於鈷的化學機械拋光方法 | |
| JP2009530853A (ja) | 金属の除去速度を制御するためのハロゲン化物アニオン | |
| IL189504A (en) | Abrasive-free polishing method | |
| CN108473850A (zh) | 低k基板的抛光方法 | |
| KR20210091339A (ko) | 루테늄 cmp를 위한 산화제 무함유 슬러리 | |
| JP2007180534A (ja) | 半導体層を研磨するための組成物 | |
| Kim et al. | Acid colloidal silica slurry for Cu CMP |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination |